WO2020207124A1

WO2020207124A1 - Display substrate and manufacturing method therefor, and display device

Info

Publication number: WO2020207124A1
Application number: PCT/CN2020/076185
Authority: WO
Inventors: 崔颖
Original assignee: 京东方科技集团股份有限公司
Priority date: 2019-04-09
Filing date: 2020-02-21
Publication date: 2020-10-15
Also published as: CN114759071A; CN109950292A

Abstract

Disclosed in the present application are a display substrate and a manufacturing method therefor, and a display device. The display substrate comprises a base substrate, and an anode, a pixel defining layer and a light-emitting layer that are sequentially located on the base substrate; wherein the pixel defining layer has a pixel area; at least a part of the anode is located in the pixel area; the light-emitting layer is located in the pixel area; a central area of the light-emitting layer is electrically connected to the anode; and an edge area of the light-emitting layer is insulated from the anode. The present application facilitates guaranteeing the uniformity of the light-emitting brightness of the light-emitting layer.

Description

显示基板及其制造方法、显示装置Display substrate, manufacturing method thereof, and display device

本申请要求于2019年04月09日提交的申请号为201910281690.5、发明名称为“显示基板及其制造方法、显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。This application claims the priority of a Chinese patent application filed on April 9, 2019 with the application number 201910281690.5 and the title of the invention "display substrate and its manufacturing method, and display device", the entire content of which is incorporated into this application by reference.

技术领域Technical field

本申请涉及一种显示基板及其制造方法、显示装置。The application relates to a display substrate, a manufacturing method thereof, and a display device.

背景技术Background technique

诸如高分子发光二极管(英文：polymer light-emitting diode；简称：PLED)等电致发光显示装置具有轻薄、低功耗、高对比度、高色域以及可柔性显示等优点，广泛应用于显示行业。Electroluminescent display devices such as polymer light-emitting diodes (English: polymer light-emitting diodes; PLED for short) have advantages such as thinness, low power consumption, high contrast, high color gamut, and flexible display, and are widely used in the display industry.

发明内容Summary of the invention

本申请提供一种显示基板及其制造方法、显示装置。本申请技术方案如下：The application provides a display substrate, a manufacturing method thereof, and a display device. The technical solution of this application is as follows:

一方面，提供一种显示基板，包括：In one aspect, a display substrate is provided, including:

衬底基板，以及，依次位于所述衬底基板上的阳极、像素界定层和发光层；A base substrate, and, an anode, a pixel defining layer, and a light-emitting layer sequentially located on the base substrate;

所述像素界定层包括像素区，所述阳极至少部分位于所述像素区中，所述发光层位于所述像素区中，所述发光层的中央区域与所述阳极电连接，所述发光层的边缘区域与所述阳极绝缘。The pixel defining layer includes a pixel area, the anode is at least partially located in the pixel area, the light-emitting layer is located in the pixel area, a central area of the light-emitting layer is electrically connected to the anode, and the light-emitting layer The edge area is insulated from the anode.

可选地，所述像素界定层包括：基体层、位于所述基体层远离所述衬底基板一侧的挡墙结构，以及由所述挡墙结构限定的所述像素区，所述基体层至少部分位于所述像素区中，所述基体层位于所述像素区中的部分具有阳极开口，所述发光层的中央区域通过所述阳极开口与所述阳极电连接，所述发光层的边缘区域与所述基体层连接。Optionally, the pixel defining layer includes: a base layer, a barrier structure located on a side of the base layer away from the base substrate, and the pixel area defined by the barrier structure, the base layer At least partly located in the pixel area, the portion of the base layer located in the pixel area has an anode opening, the central area of the light-emitting layer is electrically connected to the anode through the anode opening, and the edge of the light-emitting layer The area is connected to the base layer.

可选地，所述显示基板还包括：Optionally, the display substrate further includes:

位于所述衬底基板上的平坦层，所述阳极、所述像素界定层和所述发光层位于所述平坦层远离所述衬底基板的一侧；A flat layer located on the base substrate, the anode, the pixel defining layer and the light-emitting layer are located on a side of the flat layer away from the base substrate;

所述平坦层具有凸起结构，所述像素区在所述衬底基板上的正投影覆盖所述凸起结构在所述衬底基板上的正投影，所述阳极至少位于所述凸起结构远离所述衬底基板的一面上，所述基体层远离所述衬底基板的一面与所述阳极远离所述衬底基板的一面平齐，使所述基体层位于所述像素区中的部分具有所述阳极开口。The flat layer has a raised structure, the orthographic projection of the pixel area on the base substrate covers the orthographic projection of the raised structure on the base substrate, and the anode is at least located in the raised structure The side away from the base substrate, the side of the base layer away from the base substrate is flush with the side of the anode away from the base substrate, so that the base layer is located in the pixel area It has the anode opening.

可选地，所述阳极覆盖所述凸起结构远离所述衬底基板的一面和所述凸起结构的侧面，所述像素界定层覆盖所述阳极的侧面。Optionally, the anode covers a side of the convex structure away from the base substrate and a side surface of the convex structure, and the pixel defining layer covers the side surface of the anode.

可选地，所述阳极的纵截面呈拱形。Optionally, the longitudinal section of the anode is arched.

可选地，所述显示基板还包括：位于所述发光层远离所述衬底基板一侧的阴极，所述阴极与所述发光层电连接。Optionally, the display substrate further includes a cathode located on a side of the light-emitting layer away from the base substrate, and the cathode is electrically connected to the light-emitting layer.

可选地，所述显示基板还包括：位于所述像素区中的空穴注入层和空穴传输层，所述空穴注入层和所述空穴传输层沿远离所述衬底基板的方向分布在所述阳极与所述发光层之间，所述发光层的中央区域通过所述空穴传输层和所述空穴注入层与所述阳极电连接。Optionally, the display substrate further includes: a hole injection layer and a hole transport layer located in the pixel region, the hole injection layer and the hole transport layer along a direction away from the base substrate Distributed between the anode and the light-emitting layer, the central area of the light-emitting layer is electrically connected to the anode through the hole transport layer and the hole injection layer.

可选地，所述显示基板还包括：位于所述像素区中的电子传输层和电子注入层，所述电子传输层和所述电子注入层沿远离所述衬底基板的方向分布在所述发光层与所述阴极之间，所述阴极通过所述电子注入层和所述电子传输层与所述发光层电连接。Optionally, the display substrate further includes: an electron transport layer and an electron injection layer located in the pixel area, the electron transport layer and the electron injection layer are distributed in the direction away from the base substrate Between the light-emitting layer and the cathode, the cathode is electrically connected to the light-emitting layer through the electron injection layer and the electron transport layer.

可选地，所述显示基板还包括：位于所述衬底基板与所述阳极之间的薄膜晶体管，以及，位于所述阴极远离所述衬底基板一侧的封装层。Optionally, the display substrate further includes: a thin film transistor located between the base substrate and the anode, and an encapsulation layer located on a side of the cathode away from the base substrate.

可选地，所述显示基板为电致发光显示基板，所述发光层为电致发光层。Optionally, the display substrate is an electroluminescence display substrate, and the light-emitting layer is an electroluminescence layer.

另一方面，提供一种显示基板的制造方法，包括：In another aspect, a method for manufacturing a display substrate is provided, including:

在衬底基板上依次形成阳极和像素界定层，所述像素界定层包括像素区，所述阳极至少部分位于所述像素区中；An anode and a pixel defining layer are sequentially formed on a base substrate, the pixel defining layer includes a pixel area, and the anode is at least partially located in the pixel area;

在所述像素区中形成发光层，所述发光层的中央区域与所述阳极电连接，所述发光层的边缘区域与所述阳极绝缘。A light emitting layer is formed in the pixel area, a central area of the light emitting layer is electrically connected to the anode, and an edge area of the light emitting layer is insulated from the anode.

可选地，在衬底基板上依次形成阳极和像素界定层之前，所述方法还包括：Optionally, before sequentially forming the anode and the pixel defining layer on the base substrate, the method further includes:

在衬底基板上形成平坦层，所述平坦层具有凸起结构；Forming a flat layer on the base substrate, the flat layer having a convex structure;

所述在衬底基板上依次形成阳极和像素界定层，包括：The step of sequentially forming an anode and a pixel defining layer on a base substrate includes:

在形成有所述平坦层的衬底基板上依次形成阳极和像素界定层，所述像素区在所述衬底基板上的正投影覆盖所述凸起结构在所述衬底基板上的正投影，所述阳极至少位于所述凸起结构远离所述衬底基板的一面上，所述基体层远离所述衬底基板的一面与所述阳极远离所述衬底基板的一面平齐，使所述基体层位于所述像素区中的部分具有所述阳极开口。An anode and a pixel defining layer are sequentially formed on the base substrate on which the flat layer is formed, and the orthographic projection of the pixel area on the base substrate covers the orthographic projection of the convex structure on the base substrate The anode is located at least on the side of the protruding structure away from the base substrate, and the side of the base layer away from the base substrate is flush with the side of the anode away from the base substrate. The portion of the base layer located in the pixel area has the anode opening.

可选地，在所述像素区中形成发光层之后，所述方法还包括：Optionally, after forming the light-emitting layer in the pixel area, the method further includes:

在形成有所述发光层的衬底基板上形成阴极，所述阴极与所述发光层电连接。A cathode is formed on the base substrate on which the light-emitting layer is formed, and the cathode is electrically connected to the light-emitting layer.

可选地，在所述像素区中形成发光层之前，所述方法还包括：Optionally, before forming the light-emitting layer in the pixel area, the method further includes:

在所述像素区中依次形成空穴注入层和空穴传输层，所述空穴注入层和所述空穴传输层沿远离所述衬底基板的方向叠加；A hole injection layer and a hole transport layer are sequentially formed in the pixel area, and the hole injection layer and the hole transport layer are superimposed in a direction away from the base substrate;

所述在所述像素区中形成发光层，包括：The forming a light-emitting layer in the pixel area includes:

在形成有所述空穴传输层的所述像素区中形成发光层，所述空穴传输层和所述发光层沿远离所述衬底基板的方向叠加，所述发光层的中央区域通过所述空穴传输层和所述空穴注入层与所述阳极电连接。A light emitting layer is formed in the pixel area where the hole transport layer is formed, the hole transport layer and the light emitting layer are superimposed in a direction away from the base substrate, and the central area of the light emitting layer passes through the The hole transport layer and the hole injection layer are electrically connected to the anode.

在形成有所述发光层的所述像素区中依次形成电子传输层和电子注入层，所述发光层、所述电子传输层和所述电子注入层沿远离所述衬底基板的方向叠加；An electron transport layer and an electron injection layer are sequentially formed in the pixel area where the light emitting layer is formed, and the light emitting layer, the electron transport layer, and the electron injection layer are superimposed in a direction away from the base substrate;

所述在形成有所述发光层的衬底基板上形成阴极，包括：The forming a cathode on the base substrate on which the light-emitting layer is formed includes:

在形成有所述电子注入层的衬底基板上形成阴极，所述阴极通过所述电子注入层和所述电子传输层与所述发光层电连接。A cathode is formed on the base substrate on which the electron injection layer is formed, and the cathode is electrically connected to the light-emitting layer through the electron injection layer and the electron transport layer.

可选地，所述在所述像素区中依次形成空穴注入层和空穴传输层，包括：通过喷墨打印工艺在所述像素区中依次形成空穴注入层和空穴传输层；Optionally, the step of sequentially forming a hole injection layer and a hole transport layer in the pixel area includes: sequentially forming a hole injection layer and a hole transport layer in the pixel area through an inkjet printing process;

所述在所述像素区中形成发光层，包括：通过喷墨打印工艺在所述像素区中形成发光层；The forming the light-emitting layer in the pixel area includes: forming the light-emitting layer in the pixel area through an inkjet printing process;

所述在形成有所述发光层的所述像素区中依次形成电子传输层和电子注入层，包括：通过蒸镀工艺在形成有所述发光层的所述像素区中依次形成电子传输层和电子注入层。The step of sequentially forming an electron transport layer and an electron injection layer in the pixel area where the light-emitting layer is formed includes: sequentially forming an electron transport layer and an electron injection layer in the pixel area where the light-emitting layer is formed by an evaporation process. Electron injection layer.

可选地，在衬底基板上依次形成阳极和像素界定层之前，所述方法还包括：在衬底基板上形成薄膜晶体管；Optionally, before the anode and the pixel defining layer are sequentially formed on the base substrate, the method further includes: forming a thin film transistor on the base substrate;

所述在衬底基板上依次形成阳极和像素界定层，包括：在形成有所述薄膜晶体管的衬底基板上依次形成阳极和像素界定层；The step of sequentially forming an anode and a pixel defining layer on a base substrate includes: sequentially forming an anode and a pixel defining layer on the base substrate on which the thin film transistor is formed;

在形成有所述发光层的衬底基板上形成阴极之后，所述方法还包括：在形成有所述阴极的衬底基板上形成封装层。After forming a cathode on the base substrate on which the light-emitting layer is formed, the method further includes: forming an encapsulation layer on the base substrate on which the cathode is formed.

再一方面，提供一种显示装置，包括上述一方面或一方面的任一可选方式所述的显示基板。In another aspect, a display device is provided, which includes the display substrate according to the above aspect or any optional manner of the aspect.

附图说明Description of the drawings

为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly describe the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings needed in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained from these drawings without creative work.

图1是本申请实施例提供的一种显示基板的结构示意图；FIG. 1 is a schematic structural diagram of a display substrate provided by an embodiment of the present application;

图2是本申请实施例提供的一种发光层的正视图；Figure 2 is a front view of a light-emitting layer provided by an embodiment of the present application;

图3是本申请实施例提供的另一种显示基板的结构示意图；3 is a schematic structural diagram of another display substrate provided by an embodiment of the present application;

图4是本申请实施例提供的一种像素区与凸起结构的投影关系图；FIG. 4 is a projection relationship diagram of a pixel area and a convex structure provided by an embodiment of the present application;

图5是本申请实施例提供的再一种显示基板的结构示意图；FIG. 5 is a schematic structural diagram of still another display substrate provided by an embodiment of the present application;

图6是本申请实施例提供的一种显示基板的制造方法的方法流程图；6 is a method flowchart of a method for manufacturing a display substrate provided by an embodiment of the present application;

图7是本申请实施例提供的另一种显示基板的制造方法的方法流程图；FIG. 7 is a method flowchart of another method for manufacturing a display substrate provided by an embodiment of the present application;

图8是本申请实施例提供的一种在衬底基板上形成薄膜晶体管后的示意图；FIG. 8 is a schematic diagram after forming a thin film transistor on a base substrate provided by an embodiment of the present application;

图9是本申请实施例提供的一种在形成有薄膜晶体管的衬底基板上形成平坦层后的示意图；FIG. 9 is a schematic diagram after forming a flat layer on a base substrate formed with thin film transistors according to an embodiment of the present application; FIG.

图10是本申请实施例提供的一种在形成有平坦层的衬底基板上形成阳极后的示意图；FIG. 10 is a schematic diagram after forming an anode on a base substrate formed with a flat layer according to an embodiment of the present application; FIG.

图11是本申请实施例提供的一种在形成有阳极的衬底基板上形成像素界定层后的示意图；FIG. 11 is a schematic diagram after forming a pixel defining layer on a base substrate on which an anode is formed according to an embodiment of the present application;

图12是本申请实施例提供的一种在像素区中依次形成HIL和HTL后的示意图；FIG. 12 is a schematic diagram after HIL and HTL are sequentially formed in a pixel area according to an embodiment of the present application;

图13是本申请实施例提供的一种在形成有HTL的像素区中形成EML后的示意图；FIG. 13 is a schematic diagram after forming an EML in a pixel area where an HTL is formed according to an embodiment of the present application;

图14是本申请实施例提供的一种在形成有EML的像素区中依次形成ETL和EIL后的示意图；14 is a schematic diagram of an ETL and an EIL formed in a pixel area formed with an EML according to an embodiment of the present application;

图15是本申请实施例提供的一种在形成有EIL的衬底基板上形成阴极后的示意图；15 is a schematic diagram after forming a cathode on a base substrate formed with EIL according to an embodiment of the present application;

图16是本申请实施例提供的一种在形成有阴极的衬底基板上形成封装层后的示意图。FIG. 16 is a schematic diagram after forming an encapsulation layer on a base substrate with a cathode provided by an embodiment of the present application.

此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本申请的实施例，并与说明书一起用于解释本申请的原理。The drawings here are incorporated into the specification and constitute a part of the specification, show embodiments that conform to the application, and are used together with the specification to explain the principle of the application.

具体实施方式detailed description

为了使本申请的原理、技术方案和优点更加清楚，下面将结合附图对本申请作详细描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本申请保护的范围。In order to make the principles, technical solutions, and advantages of the present application clearer, the present application will be described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of them. Based on the embodiments in this application, all other embodiments obtained by a person of ordinary skill in the art without creative work shall fall within the protection scope of this application.

电致发光显示装置包括电致发光显示基板，电致发光显示基板通常包括衬底基板以及位于衬底基板上的薄膜晶体管(英文：Thin Film Transistor；简称：TFT)、平坦层、阳极、像素界定层(英文：Pixel Definition Layer；简称：PDL)、发光层和阴极，像素界定层包括由挡墙结构限定出的像素区，发光层位于像素区内，发光层的中央区域和边缘区域均与阳极电连接。目前，通常采用喷墨打印工艺在像素区内打印发光材料溶液，然后对像素区内的发光材料溶液进行干燥去除其溶剂，使其溶质保留形成发光层。其中，喷墨打印工艺是一种通过微米级的打印喷头将溶液(也称墨汁)打印在目标区域(也即是期望的区域)的工艺，具有操作简单、成本低廉、工艺简单以及易于实现大尺寸显示基板的制造等优点，随着高性能聚合物材料的不断研发和薄膜制备技术的完善，喷墨打印工艺有望快速实现产业化。The electroluminescence display device includes an electroluminescence display substrate. The electroluminescence display substrate usually includes a base substrate and a thin film transistor (English: Thin Film Transistor; abbreviation: TFT), a flat layer, an anode, and pixel definition on the base substrate. Layer (English: Pixel Definition Layer; abbreviation: PDL), light-emitting layer and cathode. The pixel-defining layer includes the pixel area defined by the barrier structure. The light-emitting layer is located in the pixel area. The central area and edge area of the light-emitting layer are connected to the anode Electric connection. At present, the inkjet printing process is usually used to print the luminescent material solution in the pixel area, and then the luminescent material solution in the pixel area is dried to remove its solvent, so that the solute is retained to form the luminescent layer. Among them, the inkjet printing process is a process in which a solution (also called ink) is printed on a target area (that is, a desired area) through a micron-level print nozzle. It has simple operation, low cost, simple process and easy to achieve large With the advantages of manufacturing size display substrates and other advantages, with the continuous research and development of high-performance polymer materials and the improvement of film preparation technology, the inkjet printing process is expected to be industrialized quickly.

但是，在对发光材料溶液进行干燥的过程中，发光材料溶液容易出现“咖啡环效应”，使得形成的发光层的中央区域与边缘区域的厚度差异较大，发光层厚度的均匀性较差，从而发光层的发光亮度的均匀性较差。其中，对溶液滴进行干燥的过程中，溶液滴的边缘区域的溶剂挥发的较快，中央区域的溶剂挥发的较慢，使得溶剂由溶液滴的中央区域向边缘区域流动，带动溶质由溶液滴的中央区域向边缘区域流动，溶质最终在边缘区域沉积，使得最终形成边缘厚中央薄的沉积形貌，称为“咖啡环效应”。However, in the process of drying the luminescent material solution, the luminescent material solution is prone to "coffee ring effect", which makes the thickness difference between the central region and the edge region of the luminescent layer formed, and the uniformity of the luminescent layer thickness is poor. Therefore, the uniformity of the light-emitting brightness of the light-emitting layer is poor. Among them, in the process of drying the solution drop, the solvent in the edge area of the solution drop evaporates faster, and the solvent in the central area evaporates slowly, so that the solvent flows from the central area of the solution drop to the edge area, and drives the solute from the solution drop. The central area flows to the edge area, and the solute is finally deposited in the edge area, so that the final deposition morphology with thick edges and thin center is formed, which is called "coffee ring effect".

本申请实施例提供一种显示基板及其制造方法、显示装置，在显示基板中，发光层的中央区域与阳极电连接，发光层的边缘区域与阳极绝缘，在显示基板工作过程中，发光层的中央区域发光，边缘区域不发光，即使发光层的边缘区域的厚度与中央区域的厚度存在差异，由于发光层的中央区域的厚度均匀性较好，因此发光层的发光亮度的均匀性较高。本申请的方案请参考下述实施例的描述。The embodiments of the present application provide a display substrate, a manufacturing method thereof, and a display device. In the display substrate, the central area of the light-emitting layer is electrically connected to the anode, and the edge area of the light-emitting layer is insulated from the anode. During the operation of the display substrate, the light-emitting layer The central area of the light-emitting layer emits light, and the edge area does not emit light. Even if the thickness of the edge area of the light-emitting layer is different from the thickness of the central area, since the thickness of the central area of the light-emitting layer is better, the uniformity of the light-emitting brightness of the light-emitting layer is higher. . Please refer to the description of the following embodiments for the solution of this application.

请参考图1，其示出了本申请实施例提供的一种显示基板的结构示意图，参见图1，该显示基板包括衬底基板101，以及，依次位于衬底基板101上的阳极104、像素界定层105和发光层108。像素界定层105包括像素区P，阳极104至少部分位于像素区P中，发光层108位于像素区P中，请参考图2，其示出了本申请实施例提供的一种发光层108的正视图，发光层108具有中央区域1081和围绕在中央区域1081周围的边缘区域1082，发光层108的中央区域1081与阳极104电连接，发光层108的边缘区域1082与阳极104绝缘。Please refer to FIG. 1, which shows a schematic structural diagram of a display substrate provided by an embodiment of the present application. Referring to FIG. 1, the display substrate includes a base substrate 101, and an anode 104 and a pixel are sequentially located on the base substrate 101. The layer 105 and the light-emitting layer 108 are defined. The pixel defining layer 105 includes a pixel area P, the anode 104 is at least partially located in the pixel area P, and the light-emitting layer 108 is located in the pixel area P. Please refer to FIG. 2, which shows a front view of a light-emitting layer 108 provided by an embodiment of the present application. In the figure, the light emitting layer 108 has a central area 1081 and an edge area 1082 surrounding the central area 1081. The central area 1081 of the light emitting layer 108 is electrically connected to the anode 104, and the edge area 1082 of the light emitting layer 108 is insulated from the anode 104.

综上所述，本申请实施例提供的显示基板，由于在显示基板中，发光层的中央区域与阳极电连接，发光层的边缘区域与阳极绝缘，因此在显示基板工作过程中，发光层的中央区域发光，边缘区域不发光，即使发光层的边缘区域的厚度与中央区域的厚度存在差异，由于发光层的中央区域的厚度均匀性较好，也不会影响发光层的发光亮度的均匀性。本申请提供的方案有助于解决发光层的发光亮度的均匀性较差的问题，有助于保证发光层的发光亮度的均匀性。In summary, in the display substrate provided by the embodiments of the present application, in the display substrate, the central area of the light-emitting layer is electrically connected to the anode, and the edge area of the light-emitting layer is insulated from the anode. Therefore, during the operation of the display substrate, the light-emitting layer The central area emits light but the edge area does not emit light. Even if the thickness of the edge area of the light-emitting layer is different from the thickness of the central area, the thickness of the central area of the light-emitting layer is better, and it will not affect the uniformity of the light-emitting brightness of the light-emitting layer. . The solution provided by the present application helps solve the problem of poor uniformity of the light-emitting brightness of the light-emitting layer, and helps ensure the uniformity of the light-emitting brightness of the light-emitting layer.

可选地，请继续参考图1，该像素界定层105包括：基体层1052、位于基体层1052远离衬底基板101一侧的挡墙结构1051，以及由挡墙结构1051限定的像素区P，基体层1052至少部分位于像素区P中，基体层1052位于像素区P中的部分具有阳极开口K，发光层108的中央区域1081通过阳极开口K与阳极104电连接，发光层108的边缘区域1082与基体层1052连接，使发光层108的边缘区域1082与阳极104绝缘。如图1所示，基体层1052远离衬底基板101 的一面可以为平面，这样可以便于发光层108的边缘区域1082与基体层1052连接。可选地，如图1所示，阳极104的纵截面可以呈梯形，该梯形的下底与衬底基板101接触，上底与发光层108接触，基体层1052覆盖阳极104的侧面，这样有助于降低阳极104的侧面漏电的风险，从而有助于降低图1所示的显示基板漏电的风险。其中，阳极104的纵截面可以是指阳极104的截面中与衬底基板101的板面垂直的截面。容易理解，图1所示的阳极104是示例性的，在图1所示的显示基板中，阳极104的纵截面可以呈矩形或其他形状，只要发光层108的中央区域1081能够通过阳极开口K与阳极104电连接即可，本申请实施例对此不作限定。Optionally, please continue to refer to FIG. 1, the pixel defining layer 105 includes: a base layer 1052, a barrier structure 1051 located on the side of the base layer 1052 away from the base substrate 101, and a pixel area P defined by the barrier structure 1051, The base layer 1052 is at least partially located in the pixel area P, the portion of the base layer 1052 located in the pixel area P has an anode opening K, the central area 1081 of the light-emitting layer 108 is electrically connected to the anode 104 through the anode opening K, and the edge area 1082 of the light-emitting layer 108 It is connected to the base layer 1052 to insulate the edge region 1082 of the light-emitting layer 108 from the anode 104. As shown in FIG. 1, the side of the base layer 1052 away from the base substrate 101 may be flat, so that the edge region 1082 of the light-emitting layer 108 can be easily connected to the base layer 1052. Optionally, as shown in FIG. 1, the longitudinal section of the anode 104 may be a trapezoid. The bottom of the trapezoid is in contact with the base substrate 101, the upper bottom is in contact with the light-emitting layer 108, and the base layer 1052 covers the side surface of the anode 104. It helps to reduce the risk of leakage on the side of the anode 104, thereby helping to reduce the risk of leakage of the display substrate shown in FIG. 1. The longitudinal section of the anode 104 may refer to the section of the anode 104 that is perpendicular to the surface of the base substrate 101. It is easy to understand that the anode 104 shown in FIG. 1 is exemplary. In the display substrate shown in FIG. 1, the longitudinal section of the anode 104 can be rectangular or other shapes, as long as the central area 1081 of the light-emitting layer 108 can pass through the anode opening K. It is sufficient to be electrically connected to the anode 104, which is not limited in the embodiment of the present application.

可选地，请参考图3，其示出了本申请实施例提供的另一种显示基板的结构示意图，参见图3，在图1的基础上，该显示基板还包括：位于衬底基板101上的平坦层103，阳极104、像素界定层105和发光层108位于平坦层103远离衬底基板101的一侧；平坦层103具有凸起结构1031，该凸起结构1031向远离衬底基板101的方向凸起，请参考图4，其示出了本申请实施例提供的一种像素区P与凸起结构1031的投影关系图，参见图3和图4，像素区P在衬底基板101上的正投影覆盖凸起结构1031在衬底基板101上的正投影，如图3所示，阳极104至少位于凸起结构1031远离衬底基板101的一面上，基体层1052远离衬底基板101的一面与阳极104远离衬底基板101的一面平齐，使得基体层1052位于像素区P中的部分具有阳极开口K，发光层108的中央区域1081通过阳极开口K与阳极104电连接。Optionally, please refer to FIG. 3, which shows a schematic structural diagram of another display substrate provided by an embodiment of the present application. Referring to FIG. 3, on the basis of FIG. 1, the display substrate further includes: The upper flat layer 103, the anode 104, the pixel defining layer 105, and the light-emitting layer 108 are located on the side of the flat layer 103 away from the base substrate 101; the flat layer 103 has a raised structure 1031 that faces away from the base substrate 101 Please refer to FIG. 4, which shows a projection relationship diagram of a pixel area P and a convex structure 1031 provided by an embodiment of the present application. Referring to FIGS. 3 and 4, the pixel area P is on the base substrate 101. The orthographic projection above covers the orthographic projection of the raised structure 1031 on the base substrate 101. As shown in FIG. 3, the anode 104 is located at least on the side of the raised structure 1031 away from the base substrate 101, and the base layer 1052 is away from the base substrate 101. The side of the anode 104 is flush with the side of the anode 104 away from the base substrate 101, so that the portion of the base layer 1052 in the pixel region P has an anode opening K, and the central area 1081 of the light-emitting layer 108 is electrically connected to the anode 104 through the anode opening K.

可选地，如图3所示，阳极104覆盖凸起结构1031远离衬底基板101的一面和凸起结构1031的侧面，像素界定层105覆盖阳极104的侧面。其中，凸起结构1031的侧面可以是指凸起结构1031的表面中与衬底基板101的板面相交的表面，阳极104的侧面可以是指阳极104的表面中与衬底基板101的板面相交的表面，像素界定层105覆盖阳极104的侧面有助于降低阳极104的侧面漏电的风险，从而有助于降低显示基板漏电的风险。Optionally, as shown in FIG. 3, the anode 104 covers the side of the raised structure 1031 away from the base substrate 101 and the side of the raised structure 1031, and the pixel defining layer 105 covers the side of the anode 104. Among them, the side surface of the raised structure 1031 may refer to the surface of the surface of the raised structure 1031 that intersects with the surface of the base substrate 101, and the side surface of the anode 104 may refer to the surface of the anode 104 and the surface of the base substrate 101. On the intersecting surface, the pixel defining layer 105 covers the side surface of the anode 104 to help reduce the risk of leakage of the side surface of the anode 104, thereby helping to reduce the risk of leakage of the display substrate.

可选地，如图3所示，凸起结构1031的纵截面呈梯形，阳极104的纵截面可以呈拱形。其中，该凸起结构1031的纵截面可以是指该凸起结构1031的截面中与衬底基板101的板面垂直的截面，阳极104的纵截面可以是指阳极104的截面中与衬底基板101的板面垂直的截面。可选地，凸起结构1031可以呈梯台状，阳极104可以覆盖凸起结构1031远离衬底基板101的一面和凸起结构1031 的所有侧面。Optionally, as shown in FIG. 3, the longitudinal section of the protruding structure 1031 is trapezoidal, and the longitudinal section of the anode 104 may be arched. Wherein, the longitudinal section of the raised structure 1031 may refer to the section of the raised structure 1031 that is perpendicular to the surface of the base substrate 101, and the longitudinal section of the anode 104 may refer to the section of the anode 104 and the base substrate. The vertical cross-section of the board of 101. Optionally, the raised structure 1031 may be in the shape of a terrace, and the anode 104 may cover a side of the raised structure 1031 away from the base substrate 101 and all sides of the raised structure 1031.

可选地，请参考图5，其示出了本申请实施例提供的再一种显示基板的结构示意图，参见图5，在图3的基础上，该显示基板还包括：位于发光层108远离衬底基板101一侧的阴极111，阴极111与发光层108电连接。其中，阴极111可以为板状电极，且可以为透明金属电极或非透明金属电极，阴极111在衬底基板101上的正投影可以覆盖像素界定层105在衬底基板101上的正投影。Optionally, please refer to FIG. 5, which shows a schematic structural diagram of another display substrate provided by an embodiment of the present application. Referring to FIG. 5, on the basis of FIG. 3, the display substrate further includes: The cathode 111 on the side of the base substrate 101 and the cathode 111 are electrically connected to the light-emitting layer 108. The cathode 111 may be a plate-shaped electrode, and may be a transparent metal electrode or a non-transparent metal electrode. The orthographic projection of the cathode 111 on the base substrate 101 may cover the orthographic projection of the pixel defining layer 105 on the base substrate 101.

可选地，请继续参考图5，该显示基板还包括：位于像素区P中的空穴注入层106和空穴传输层107，空穴注入层106和空穴传输层107沿远离衬底基板101的方向分布在阳极104与发光层108之间，发光层108的中央区域1081通过空穴传输层106和空穴注入层107与阳极104电连接。其中，空穴注入层106可以用于向发光层108注入空穴，空穴传输层107可以用于调节空穴注入层106向发光层108注入空穴的速度和注入量，提高发光层108的发光效率。Optionally, please continue to refer to FIG. 5, the display substrate further includes: a hole injection layer 106 and a hole transport layer 107 located in the pixel region P, and the hole injection layer 106 and the hole transport layer 107 are far away from the base substrate The direction of 101 is distributed between the anode 104 and the light-emitting layer 108, and the central area 1081 of the light-emitting layer 108 is electrically connected to the anode 104 through the hole transport layer 106 and the hole injection layer 107. Among them, the hole injection layer 106 can be used to inject holes into the light-emitting layer 108, and the hole transport layer 107 can be used to adjust the speed and amount of holes injected by the hole injection layer 106 into the light-emitting layer 108, and improve the efficiency of the light-emitting layer 108. Luminous efficiency.

可选地，请继续参考图5，该显示基板还包括：位于像素区P中的电子传输层109和电子注入层110，电子传输层109和电子注入层110沿远离衬底基板101的方向分布在发光层108与阴极111之间，阴极111通过电子注入层110和电子传输层109与发光层108电连接。其中，电子注入层110可以用于向发光层108注入电子，电子传输层109可以用于调节电子注入层110向发光层108注入电子的速度和注入量，提高发光层108的发光效率。Optionally, please continue to refer to FIG. 5, the display substrate further includes: an electron transport layer 109 and an electron injection layer 110 located in the pixel area P, the electron transport layer 109 and the electron injection layer 110 are distributed along a direction away from the base substrate 101 Between the light emitting layer 108 and the cathode 111, the cathode 111 is electrically connected to the light emitting layer 108 through the electron injection layer 110 and the electron transport layer 109. The electron injection layer 110 can be used to inject electrons into the light-emitting layer 108, and the electron transport layer 109 can be used to adjust the speed and amount of electrons injected into the light-emitting layer 108 by the electron injection layer 110, and improve the luminous efficiency of the light-emitting layer 108.

可选地，请继续参考图5，该显示基板还包括：位于衬底基板101与平坦层103之间的薄膜晶体管102，以及，位于阴极111远离衬底基板101一侧的封装层112。其中，该薄膜晶体管102可以是顶栅型薄膜晶体管或底栅型薄膜晶体管，本申请实施例对此不作限定，该薄膜晶体管102可以包括栅极(图5中未示出)、栅绝缘层(图5中未示出)、有源层(图5中未示出)、层间介质层(图5中未示出)、源极(图5中未示出)和漏极(图5中未示出)，源极与漏极可以同层分布，源极与漏极不接触，且源极和漏极分别与有源层接触。该封装层112可以为薄膜封装层或封装盖板，薄膜封装层可以包括交替叠加的无机层和有机层，封装盖板可以为透明基板。可选地，平坦层103上与薄膜晶体管102的漏极对应的区域可以具有过孔(图5中未示出)，阳极104可以通过该过孔与薄膜晶体管102的漏极电连接，本申请实施例在此不再赘述。Optionally, please continue to refer to FIG. 5, the display substrate further includes: a thin film transistor 102 located between the base substrate 101 and the flat layer 103, and an encapsulation layer 112 located on the side of the cathode 111 away from the base substrate 101. The thin film transistor 102 may be a top-gate thin film transistor or a bottom-gate thin film transistor, which is not limited in the embodiment of the present application. The thin film transistor 102 may include a gate (not shown in FIG. 5) and a gate insulating layer ( Not shown in Figure 5), active layer (not shown in Figure 5), interlayer dielectric layer (not shown in Figure 5), source (not shown in Figure 5) and drain (not shown in Figure 5) (Not shown), the source and drain can be distributed in the same layer, the source and the drain are not in contact, and the source and the drain are in contact with the active layer respectively. The encapsulation layer 112 may be a thin-film encapsulation layer or a encapsulation cover plate, the thin-film encapsulation layer may include an inorganic layer and an organic layer alternately stacked, and the encapsulation cover plate may be a transparent substrate. Optionally, the area on the flat layer 103 corresponding to the drain of the thin film transistor 102 may have a via hole (not shown in FIG. 5), and the anode 104 may be electrically connected to the drain of the thin film transistor 102 through the via hole. The embodiments are not repeated here.

可选地，该显示基板可以为电致发光显示基板，发光层108可以为电致发光层，例如发光层108为有机发光层，该有机发光层可以为高分子有机发光层。Optionally, the display substrate may be an electroluminescent display substrate, and the light emitting layer 108 may be an electroluminescent layer, for example, the light emitting layer 108 is an organic light emitting layer, and the organic light emitting layer may be a polymer organic light emitting layer.

本申请实施例提供的显示基板可以应用于下文的方法，本申请实施例的显示基板的制造方法可以参见下文各实施例中的描述。The display substrate provided by the embodiment of the present application can be applied to the following method, and the manufacturing method of the display substrate of the embodiment of the present application can be referred to the description in the following embodiments.

请参考图6，其示出了本申请实施例提供的一种显示基板的制造方法的方法流程图，该显示基板的制造方法可以用于制造图1、图3或图5任一所示的显示基板，参见图6，该方法可以包括如下几个步骤：Please refer to FIG. 6, which shows a method flow chart of a method for manufacturing a display substrate provided by an embodiment of the present application. The method for manufacturing a display substrate can be used to manufacture any one shown in FIG. 1, FIG. 3, or FIG. 5. For the display substrate, referring to FIG. 6, the method may include the following steps:

在步骤601中、在衬底基板上依次形成阳极和像素界定层，像素界定层包括像素区，阳极至少部分位于像素区中。In step 601, an anode and a pixel defining layer are sequentially formed on a base substrate. The pixel defining layer includes a pixel area, and the anode is at least partially located in the pixel area.

在步骤602中、在像素区中形成发光层，发光层的中央区域与阳极电连接，发光层的边缘区域与阳极绝缘。In step 602, a light emitting layer is formed in the pixel area, the central area of the light emitting layer is electrically connected to the anode, and the edge area of the light emitting layer is insulated from the anode.

综上所述，本申请实施例提供的显示基板的制造方法，由于在显示基板中，发光层的中央区域与阳极电连接，发光层的边缘区域与阳极绝缘，因此在显示基板工作过程中，发光层的中央区域发光，边缘区域不发光，即使发光层的边缘区域的厚度与中央区域的厚度存在差异，由于发光层的中央区域的厚度均匀性较好，也不会影响发光层的发光亮度的均匀性。本申请提供的方案有助于解决发光层的发光亮度的均匀性较差的问题，有助于保证发光层的发光亮度的均匀性。In summary, in the manufacturing method of the display substrate provided by the embodiments of the present application, in the display substrate, the central area of the light-emitting layer is electrically connected to the anode, and the edge area of the light-emitting layer is insulated from the anode. Therefore, during the operation of the display substrate, The central area of the light-emitting layer emits light, and the edge area does not emit light. Even if the thickness of the edge area of the light-emitting layer is different from the thickness of the central area, since the thickness of the central area of the light-emitting layer is better, it will not affect the light-emitting brightness of the light-emitting layer. The uniformity. The solution provided by the present application helps solve the problem of poor uniformity of the light-emitting brightness of the light-emitting layer, and helps ensure the uniformity of the light-emitting brightness of the light-emitting layer.

可选地，像素界定层包括：基体层、位于基体层远离衬底基板一侧的挡墙结构，以及由挡墙结构限定的像素区，基体层至少部分位于像素区中，基体层位于像素区中的部分具有阳极开口，发光层的中央区域通过阳极开口与阳极电连接，发光层的边缘区域与基体层连接。Optionally, the pixel defining layer includes: a base layer, a barrier structure located on a side of the base layer away from the base substrate, and a pixel area defined by the barrier structure, the base layer is at least partially located in the pixel area, and the base layer is located in the pixel area The middle part has an anode opening, the central area of the light-emitting layer is electrically connected to the anode through the anode opening, and the edge area of the light-emitting layer is connected to the base layer.

可选地，在步骤601之前，该方法还包括：Optionally, before step 601, the method further includes:

在衬底基板上形成平坦层，平坦层具有凸起结构；Forming a flat layer on the base substrate, the flat layer having a convex structure;

相应地，步骤601包括：Correspondingly, step 601 includes:

在形成有平坦层的衬底基板上依次形成阳极和像素界定层，像素区在衬底基板上的正投影覆盖凸起结构在衬底基板上的正投影，阳极至少位于凸起结构远离衬底基板的一面上，基体层远离衬底基板的一面与阳极远离衬底基板的一面平齐，使基体层位于像素区中的部分具有阳极开口。The anode and the pixel defining layer are sequentially formed on the base substrate with the flat layer. The orthographic projection of the pixel area on the base substrate covers the orthographic projection of the convex structure on the base substrate. The anode is at least located on the convex structure away from the substrate. On one side of the substrate, the side of the base layer away from the base substrate is flush with the side of the anode away from the base substrate, so that the part of the base layer located in the pixel area has an anode opening.

可选地，阳极覆盖凸起结构远离衬底基板的一面和凸起结构的侧面，像素界定层覆盖阳极的侧面。Optionally, the anode covers the side of the raised structure away from the base substrate and the side of the raised structure, and the pixel defining layer covers the side of the anode.

可选地，阳极的纵截面呈拱形。Optionally, the longitudinal section of the anode is arched.

可选地，在步骤602之后，该方法还包括：Optionally, after step 602, the method further includes:

在形成有发光层的衬底基板上形成阴极，阴极与发光层电连接。A cathode is formed on the base substrate on which the light-emitting layer is formed, and the cathode is electrically connected to the light-emitting layer.

可选地，在步骤602之前，该方法还包括：Optionally, before step 602, the method further includes:

在像素区中依次形成空穴注入层和空穴传输层，空穴注入层和空穴传输层沿远离衬底基板的方向叠加；A hole injection layer and a hole transport layer are sequentially formed in the pixel area, and the hole injection layer and the hole transport layer are superimposed in a direction away from the base substrate;

相应地，步骤602包括：Correspondingly, step 602 includes:

在形成有空穴传输层的像素区中形成发光层，空穴传输层和发光层沿远离衬底基板的方向叠加，发光层的中央区域通过空穴传输层和空穴注入层与阳极电连接。A light-emitting layer is formed in the pixel area where the hole transport layer is formed. The hole transport layer and the light-emitting layer are superimposed along the direction away from the base substrate. The central area of the light-emitting layer is electrically connected to the anode through the hole transport layer and the hole injection layer .

在形成有发光层的像素区中依次形成电子传输层和电子注入层，发光层、电子传输层和电子注入层沿远离衬底基板的方向叠加；In the pixel area where the light-emitting layer is formed, an electron transport layer and an electron injection layer are sequentially formed, and the light-emitting layer, the electron transport layer and the electron injection layer are superimposed in a direction away from the base substrate;

相应地，在形成有发光层的衬底基板上形成阴极，包括：Correspondingly, forming a cathode on the base substrate on which the light-emitting layer is formed includes:

在形成有电子注入层的衬底基板上形成阴极，阴极通过电子注入层和电子传输层与发光层电连接。A cathode is formed on the base substrate on which the electron injection layer is formed, and the cathode is electrically connected to the light emitting layer through the electron injection layer and the electron transport layer.

可选地，在像素区中依次形成空穴注入层和空穴传输层，包括：Optionally, sequentially forming a hole injection layer and a hole transport layer in the pixel area, including:

通过喷墨打印工艺在像素区中依次形成空穴注入层和空穴传输层；The hole injection layer and the hole transport layer are sequentially formed in the pixel area through an inkjet printing process;

在像素区中形成发光层，包括：Forming a light-emitting layer in the pixel area includes:

通过喷墨打印工艺在像素区中形成发光层；Forming a light-emitting layer in the pixel area through an inkjet printing process;

在形成有发光层的像素区中依次形成电子传输层和电子注入层，包括：An electron transport layer and an electron injection layer are sequentially formed in the pixel area where the light-emitting layer is formed, including:

通过蒸镀工艺在形成有发光层的像素区中依次形成电子传输层和电子注入层。An electron transport layer and an electron injection layer are sequentially formed in the pixel area where the light-emitting layer is formed through an evaporation process.

在衬底基板上形成薄膜晶体管；Forming a thin film transistor on the base substrate;

相应地，步骤601包括：在形成有薄膜晶体管的衬底基板上依次形成阳极和像素界定层；Correspondingly, step 601 includes: sequentially forming an anode and a pixel defining layer on the base substrate on which the thin film transistor is formed;

在形成有发光层的衬底基板上形成阴极之后，该方法还包括：After forming the cathode on the base substrate on which the light-emitting layer is formed, the method further includes:

在形成有阴极的衬底基板上形成封装层。An encapsulation layer is formed on the base substrate on which the cathode is formed.

上述所有可选技术方案，可以采用任意结合形成本申请的可选实施例，在此不再一一赘述。All the above-mentioned optional technical solutions can be combined in any way to form optional embodiments of the present application, which will not be repeated here.

请参考图7，其示出了本申请实施例提供的另一种显示基板的制造方法的方法流程图，该显示基板的制造方法可以用于制造图1、图3或图5任一所示的显示基板，本申请实施例以制造图5所示的显示基板为例说明。参见图7，该方法可以包括如下几个步骤：Please refer to FIG. 7, which shows a method flow chart of another method for manufacturing a display substrate provided by an embodiment of the present application. The method for manufacturing a display substrate can be used to manufacture any one shown in FIG. 1, FIG. 3, or FIG. 5. The display substrate of the present application is described by taking the manufacturing of the display substrate shown in FIG. 5 as an example. Referring to Figure 7, the method may include the following steps:

在步骤701中、在衬底基板上形成薄膜晶体管。In step 701, a thin film transistor is formed on a base substrate.

示例地，请参考图8，其示出了本申请实施例提供的一种在衬底基板101上形成薄膜晶体管102后的示意图。薄膜晶体管102可以包括栅极(图8中未示出)、栅绝缘层(图8中未示出)、有源层(图8中未示出)、层间介质层(图8中未示出)、源极(图8中未示出)和漏极(图8中未示出)，源极和漏极可以同层分布，且源极与漏极不接触，源极和漏极分别与有源层接触。其中，该薄膜晶体管102可以是顶栅型薄膜晶体管或底栅型薄膜晶体管，本申请实施例对此不作限定。可选地，以薄膜晶体管102为底栅型薄膜晶体管为例，在衬底基板101上形成薄膜晶体管102可以包括：在衬底基板101上依次形成栅极、栅绝缘层、有源层、层间介质层和源漏极层，源漏极层包括源极和漏极。For example, please refer to FIG. 8, which shows a schematic diagram after forming a thin film transistor 102 on a base substrate 101 according to an embodiment of the present application. The thin film transistor 102 may include a gate (not shown in FIG. 8), a gate insulating layer (not shown in FIG. 8), an active layer (not shown in FIG. 8), and an interlayer dielectric layer (not shown in FIG. 8). Out), source (not shown in Figure 8) and drain (not shown in Figure 8), the source and drain can be distributed in the same layer, and the source and drain are not in contact, the source and drain are respectively Contact with the active layer. The thin film transistor 102 may be a top gate thin film transistor or a bottom gate thin film transistor, which is not limited in the embodiment of the present application. Optionally, taking the thin film transistor 102 as a bottom-gate thin film transistor as an example, forming the thin film transistor 102 on the base substrate 101 may include: sequentially forming a gate, a gate insulating layer, an active layer, and a layer on the base substrate 101. Between the dielectric layer and the source drain layer, the source drain layer includes a source electrode and a drain electrode.

在步骤702中、在形成有薄膜晶体管的衬底基板上形成平坦层，平坦层具有凸起结构。In step 702, a flat layer is formed on the base substrate on which the thin film transistor is formed, and the flat layer has a convex structure.

示例地，请参考图9，其示出了本申请实施例提供的一种在形成有薄膜晶体管102的衬底基板101上形成平坦层103后的示意图。参见图9，平坦层103具有凸起结构1031，该凸起结构1031向远离衬底基板101的方向凸起，该凸起结构1031的纵截面可以呈梯形，其中，该凸起结构1031的纵截面可以是指该凸起结构1031的截面中与衬底基板101的板面垂直的截面。可选地，该凸起结构1031可以呈梯台状。本领域技术人员容易理解，平坦层103上与薄膜晶体管102的漏极对应的区域可以具有过孔(图9中未示出)，以便于后续形成的阳极通过该过孔与薄膜晶体管102的漏极电连接。For example, please refer to FIG. 9, which shows a schematic diagram after a flat layer 103 is formed on a base substrate 101 on which a thin film transistor 102 is formed according to an embodiment of the present application. Referring to FIG. 9, the flat layer 103 has a raised structure 1031, and the raised structure 1031 is raised in a direction away from the base substrate 101. The longitudinal section of the raised structure 1031 may be trapezoidal, and the longitudinal section of the raised structure 1031 The cross-section may refer to the cross-section perpendicular to the surface of the base substrate 101 in the cross-section of the convex structure 1031. Optionally, the raised structure 1031 may be in the shape of a terrace. Those skilled in the art can easily understand that the region on the planarization layer 103 corresponding to the drain of the thin film transistor 102 may have a via hole (not shown in FIG. 9), so that the subsequently formed anode can pass through the via hole and the drain of the thin film transistor 102. Extremely electrical connection.

可选地，平坦层103的材料可以为有机树脂等透明有机材料，或者平坦层 103的材料可以为SiOx(中文：氧化硅)、SiNx(中文：氮化硅)、Al ₂O ₃(中文：氧化铝)或SiOxNx(中文：氮氧化硅)等透明无机材料。以平坦层103的材料为有机树脂为例，可选地，在形成有薄膜晶体管102的衬底基板101上形成平坦层103可以包括：通过磁控溅射、热蒸发或者等离子体增强化学气相沉积法(英文：Plasma Enhanced Chemical Vapor Deposition；简称：PECVD)等工艺中的任一种在形成有薄膜晶体管102的衬底基板101上沉积一层有机树脂得到树脂材质层，对树脂材质层依次进行曝光和显影得到平坦层103。 Optionally, the material of the flat layer 103 may be a transparent organic material such as organic resin, or the material of the flat layer 103 may be SiOx (Chinese: silicon oxide), SiNx (Chinese: silicon nitride), Al ₂ O ₃ (Chinese: Alumina) or SiOxNx (Chinese: silicon oxynitride) and other transparent inorganic materials. Taking the material of the flat layer 103 as an organic resin as an example, optionally, forming the flat layer 103 on the base substrate 101 on which the thin film transistor 102 is formed may include: magnetron sputtering, thermal evaporation, or plasma enhanced chemical vapor deposition Method (English: Plasma Enhanced Chemical Vapor Deposition; abbreviation: PECVD) and other processes deposit a layer of organic resin on the base substrate 101 on which the thin film transistor 102 is formed to obtain a resin material layer, and sequentially expose the resin material layer And developing to obtain a flat layer 103.

本领域技术人员可以理解，该步骤702中所描述的凸起结构1031以及图9中示出的凸起结构1031仅仅是示例性的，该凸起结构1031的纵截面还可以呈其他形状，该凸起结构1031还可以呈其他形状，例如，该凸起结构1031还可以呈圆台状，本申请实施例对此不作限定。Those skilled in the art can understand that the protruding structure 1031 described in step 702 and the protruding structure 1031 shown in FIG. 9 are only exemplary, and the longitudinal section of the protruding structure 1031 may also have other shapes. The convex structure 1031 may also have other shapes. For example, the convex structure 1031 may also have a truncated cone shape, which is not limited in the embodiment of the present application.

在步骤703中、在形成有平坦层的衬底基板上形成阳极，阳极至少位于凸起结构远离衬底基板的一面上。In step 703, an anode is formed on the base substrate on which the flat layer is formed, and the anode is located at least on the side of the convex structure away from the base substrate.

示例地，请参考图10，其示出了本申请实施例提供的一种在形成有平坦层103的衬底基板101上形成阳极104后的示意图。参见图10，阳极104至少位于凸起结构1031远离衬底基板101的一面上。可选地，阳极104的纵截面呈拱形，阳极104覆盖凸起结构1031远离衬底基板101的一面和凸起结构1031的侧面，其中，凸起结构1031的侧面可以是指凸起结构1031的表面中与衬底基板101的板面相交的表面，阳极104的纵截面可以是指阳极104的截面中与衬底基板101的板面垂直的截面。For example, please refer to FIG. 10, which shows a schematic diagram after forming an anode 104 on a base substrate 101 with a flat layer 103 provided by an embodiment of the present application. Referring to FIG. 10, the anode 104 is located at least on the side of the raised structure 1031 away from the base substrate 101. Optionally, the longitudinal section of the anode 104 is arched, and the anode 104 covers the side of the raised structure 1031 away from the base substrate 101 and the side of the raised structure 1031, wherein the side of the raised structure 1031 may refer to the raised structure 1031 The longitudinal section of the anode 104 may refer to the section of the anode 104 that is perpendicular to the plate surface of the base substrate 101.

可选地，阳极104的材料可以为氧化铟锡(英文：Indium tin oxide；简称：ITO)、氧化铟锌(英文：Indium zinc oxide；简称：IZO)或掺铝氧化锌(英文：aluminum-doped zinc oxide；简称：ZnO:Al)等金属氧化物。以阳极104的材料为ITO为例，可选地，在形成有平坦层103的衬底基板101上形成阳极104可以包括：通过磁控溅射、热蒸发或者PECVD等工艺中的任一种在形成有平坦层103的衬底基板101上沉积一层ITO得到ITO材质层，通过一次构图工艺对ITO材质层进行处理得到阳极104。Optionally, the material of the anode 104 may be indium tin oxide (English: Indium tin oxide; abbreviation: ITO), indium zinc oxide (English: Indium zinc oxide; abbreviation: IZO) or aluminum-doped zinc oxide (English: aluminum-doped zinc oxide; abbreviation: ZnO:Al) and other metal oxides. Taking the material of the anode 104 as ITO as an example, optionally, forming the anode 104 on the base substrate 101 on which the flat layer 103 is formed may include: any one of magnetron sputtering, thermal evaporation or PECVD processes A layer of ITO is deposited on the base substrate 101 on which the flat layer 103 is formed to obtain an ITO material layer, and the ITO material layer is processed through a patterning process to obtain the anode 104.

在步骤704中、在形成有阳极的衬底基板上形成像素界定层，像素界定层包括基体层、位于基体层远离衬底基板一侧的挡墙结构，以及由挡墙结构限定的像素区，像素区在衬底基板上的正投影覆盖凸起结构在衬底基板上的正投影，基体层至少部分位于像素区中，基体层位于像素区中的部分具有阳极开口，基体层远离衬底基板的一面与阳极远离衬底基板的一面平齐。In step 704, a pixel defining layer is formed on the base substrate on which the anode is formed. The pixel defining layer includes a base layer, a barrier structure on the side of the base layer away from the base substrate, and a pixel area defined by the barrier structure, The orthographic projection of the pixel area on the base substrate covers the orthographic projection of the convex structure on the base substrate, the base layer is at least partially located in the pixel area, the portion of the base layer located in the pixel area has an anode opening, and the base layer is away from the base substrate The side of the anode is flush with the side of the anode away from the base substrate.

示例地，请参考图11，其示出了本申请实施例提供的一种在形成有阳极104的衬底基板101上形成像素界定层105后的示意图。参见图11，像素界定层105基体层1052、位于基体层1052远离衬底基板101一侧的挡墙结构1051以及由挡墙结构1051限定的像素区P，像素区P在衬底基板101上的正投影可以覆盖凸起结构1031在衬底基板101上的正投影，基体层1052至少部分位于像素区P中，基体层1052位于像素区P中的部分具有阳极开口K，基体层1052远离衬底基板101的一面与阳极104远离衬底基板101的一面平齐。如图11所示，挡墙结构1051远离衬底基板101的一面与衬底基板101之间的距离大于像素区P与衬底基板101之间的距离(也即是挡墙结构1051相对衬底基板101的高度大于像素区P相对衬底基板101的高度)，因此相对于挡墙结构1051而言，像素区P位于坑中，从而在一些场景中，像素区P也称为像素坑。可选地，如图11所示，像素界定层105覆盖阳极104的侧面，例如，像素界定层105的基体层1052覆盖阳极104的侧面，阳极104的侧面可以是指阳极104的表面中与衬底基板101的板面相交的表面，其中，像素界定层105为绝缘材质，像素界定层105覆盖阳极104的侧面有助于降低阳极104的侧面漏电的风险。For example, please refer to FIG. 11, which shows a schematic diagram after forming a pixel defining layer 105 on a base substrate 101 formed with an anode 104 provided by an embodiment of the present application. 11, the pixel defining layer 105 base layer 1052, the barrier structure 1051 located on the side of the base layer 1052 away from the base substrate 101, and the pixel area P defined by the barrier structure 1051, the pixel area P on the base substrate 101 The orthographic projection can cover the orthographic projection of the raised structure 1031 on the base substrate 101, the base layer 1052 is at least partially located in the pixel area P, the portion of the base layer 1052 located in the pixel area P has an anode opening K, and the base layer 1052 is away from the substrate The side of the substrate 101 is flush with the side of the anode 104 away from the base substrate 101. As shown in FIG. 11, the distance between the side of the wall structure 1051 away from the base substrate 101 and the base substrate 101 is greater than the distance between the pixel area P and the base substrate 101 (that is, the wall structure 1051 is opposite to the substrate 101). The height of the substrate 101 is greater than the height of the pixel area P relative to the base substrate 101). Therefore, relative to the barrier structure 1051, the pixel area P is located in the pit, so in some scenarios, the pixel area P is also called a pixel pit. Optionally, as shown in FIG. 11, the pixel defining layer 105 covers the side surface of the anode 104. For example, the base layer 1052 of the pixel defining layer 105 covers the side surface of the anode 104. The side surface of the anode 104 may refer to the surface of the anode 104 and the liner. The intersecting surface of the base substrate 101, wherein the pixel defining layer 105 is made of insulating material, and covering the side surface of the anode 104 by the pixel defining layer 105 helps to reduce the risk of side leakage of the anode 104.

可选地，像素界定层105的材料可以为有机树脂等透明有机材料，或者像素界定层105的材料可以为SiOx、SiNx、Al ₂O ₃或SiOxNx等透明无机材料。以像素界定层105的材料为有机树脂为例，可选地，在形成有阳极104的衬底基板101上形成像素界定层105可以包括：通过磁控溅射、热蒸发或者PECVD等工艺中的任一种在形成有阳极104的衬底基板101上沉积一层有机树脂得到树脂材质层，对树脂材质层依次进行曝光和显影得到像素界定层105。 Optionally, the material of the pixel defining layer 105 may be a transparent organic material such as organic resin, or the material of the pixel defining layer 105 may be a transparent inorganic material such as SiOx, SiNx, Al ₂ O ₃ or SiOxNx. Taking the material of the pixel defining layer 105 as an organic resin as an example, optionally, forming the pixel defining layer 105 on the base substrate 101 on which the anode 104 is formed may include: using magnetron sputtering, thermal evaporation, or PECVD processes. In either case, a layer of organic resin is deposited on the base substrate 101 on which the anode 104 is formed to obtain a resin material layer, and the resin material layer is sequentially exposed and developed to obtain the pixel defining layer 105.

在步骤705中、在像素区中依次形成空穴注入层和空穴传输层。In step 705, a hole injection layer and a hole transport layer are sequentially formed in the pixel area.

可选地，可以通过喷墨打印工艺在像素区中依次形成空穴注入层和空穴传输层。Alternatively, a hole injection layer and a hole transport layer may be sequentially formed in the pixel area through an inkjet printing process.

示例地，请参考图12，其示出了本申请实施例提供的一种在像素区P中依次形成空穴注入层(英文：hole injection layer；简称：HIL)106和空穴传输层(英文：hole transport layer；简称：HTL)107后的示意图。参见图12，空穴注入层106和空穴传输层107沿远离衬底基板101的方向叠加，空穴注入层106与阳极104电连接。For example, please refer to FIG. 12, which shows a hole injection layer (English: hole injection layer; abbreviation: HIL) 106 and a hole transport layer (English) are sequentially formed in the pixel area P according to an embodiment of the present application. : Hole transport layer; abbreviation: HTL) Schematic diagram after 107. Referring to FIG. 12, the hole injection layer 106 and the hole transport layer 107 are stacked in a direction away from the base substrate 101, and the hole injection layer 106 is electrically connected to the anode 104.

可选地，空穴注入层106的材料可以为空穴注入材料，空穴传输层107的材料可以为空穴传输材料，空穴注入材料例如可以为四氟四氰基醌二甲烷，空穴传输材料例如可以为PEDOT/PSS(聚3，4-乙烯二氧噻吩/聚苯乙烯磺酸盐)。可选地，在像素区P中依次空穴注入层106和空穴传输层107可以包括：首先，通过喷墨打印工艺在像素区P中打印空穴注入材料溶液，对打印的空穴注入材料溶液进行干燥得到空穴注入层106，然后在形成有空穴注入层106的像素区P中打印空穴传输材料溶液，对打印的空穴传输材料溶液进行干燥得到空穴传输层107。Optionally, the material of the hole injection layer 106 may be a hole injection material, the material of the hole transport layer 107 may be a hole transport material, and the hole injection material may be, for example, tetrafluorotetracyanoquinodimethane, and holes The transmission material may be, for example, PEDOT/PSS (poly3,4-ethylenedioxythiophene/polystyrene sulfonate). Optionally, the hole injection layer 106 and the hole transport layer 107 in the pixel area P in sequence may include: firstly, printing the hole injection material solution in the pixel area P by an inkjet printing process, and the printed hole injection material The solution is dried to obtain the hole injection layer 106, and then the hole transport material solution is printed in the pixel area P where the hole injection layer 106 is formed, and the printed hole transport material solution is dried to obtain the hole transport layer 107.

在步骤706中、在形成有空穴传输层的像素区中形成发光层，发光层的中央区域通过空穴传输层和空穴注入层与阳极电连接，发光层的边缘区域与阳极绝缘。In step 706, a light-emitting layer is formed in the pixel area where the hole transport layer is formed. The central area of the light-emitting layer is electrically connected to the anode through the hole transport layer and the hole injection layer, and the edge area of the light-emitting layer is insulated from the anode.

可选地，可以通过喷墨打印工艺在形成有空穴传输层的像素区中形成发光层。Alternatively, the light-emitting layer may be formed in the pixel region where the hole transport layer is formed by an inkjet printing process.

示例地，请参考图13，其示出了本申请实施例提供的一种在形成有空穴传输层107的像素区P中形成发光层(英文：Emission layer；简称：EML)108后的示意图。参见图13，空穴注入层106、空穴传输层107和发光层108沿远离衬底基板101的方向叠加，参见图13并结合图3和图5，发光层108具有中央区域1081和边缘区域1082，边缘区域1082围绕中央区域1081，发光层108的中央区域1081通过空穴传输层107和空穴注入层106与阳极104电连接，发光层108的边缘区域1082通过空穴传输层107和空穴注入层106与像素界定层105的基体层1052连接，阳极104与基体层1052连接，由于基体层1052为绝缘材质，因此发光层108的边缘区域1082与阳极104绝缘。For example, please refer to FIG. 13, which shows a schematic diagram after forming a light-emitting layer (English: Emission layer; abbreviation: EML) 108 in a pixel region P where a hole transport layer 107 is formed according to an embodiment of the present application . Referring to FIG. 13, the hole injection layer 106, the hole transport layer 107, and the light emitting layer 108 are superimposed along a direction away from the base substrate 101. Referring to FIG. 13 and in conjunction with FIGS. 3 and 5, the light emitting layer 108 has a central area 1081 and an edge area 1082, the edge area 1082 surrounds the central area 1081, the central area 1081 of the light-emitting layer 108 is electrically connected to the anode 104 through the hole transport layer 107 and the hole injection layer 106, and the edge area 1082 of the light-emitting layer 108 passes through the hole transport layer 107 and the hole The hole injection layer 106 is connected to the base layer 1052 of the pixel defining layer 105, and the anode 104 is connected to the base layer 1052. Since the base layer 1052 is made of insulating material, the edge region 1082 of the light-emitting layer 108 is insulated from the anode 104.

可选地，发光层108的材料可以为电致发光材料，例如可以为有机发光材料。可选地，在形成有空穴传输层107的像素区P中形成发光层108可以包括：通过喷墨打印工艺在形成有空穴传输层107的像素区P中打印有机发光材料溶液，对打印的有机发光材料溶液进行干燥得到发光层108。容易理解，对打印的有机发光材料溶液进行干燥的过程中，有机发光材料溶液会向空穴传输层107的边缘区域攀爬，使得最终制成的发光层108的边缘区域1082的厚度与中央区域1081的厚度存在差异，但是由于发光层108的中央区域1081与阳极104电连接，发光层108的边缘区域1082与阳极104绝缘，因此发光层108的中央区域1081发光，边缘区域1082不发光，即使发光层108的边缘区域的厚度与中央区域的厚度存在差异也不会影响发光层108的发光亮度的均匀性。Optionally, the material of the light-emitting layer 108 may be an electroluminescent material, for example, it may be an organic light-emitting material. Optionally, forming the light-emitting layer 108 in the pixel area P where the hole transport layer 107 is formed may include: printing an organic light-emitting material solution in the pixel area P where the hole transport layer 107 is formed by an inkjet printing process to print The organic light-emitting material solution is dried to obtain the light-emitting layer 108. It is easy to understand that in the process of drying the printed organic light-emitting material solution, the organic light-emitting material solution will climb to the edge area of the hole transport layer 107, so that the thickness of the edge area 1082 of the final light-emitting layer 108 is the same as the central area. There is a difference in the thickness of 1081, but because the central area 1081 of the light-emitting layer 108 is electrically connected to the anode 104, the edge area 1082 of the light-emitting layer 108 is insulated from the anode 104, so the central area 1081 of the light-emitting layer 108 emits light, and the edge area 1082 does not emit light. The difference between the thickness of the edge area of the light-emitting layer 108 and the thickness of the central area does not affect the uniformity of the light-emitting brightness of the light-emitting layer 108.

本领域技术人员容易理解，显示基板可以包括不同颜色的发光层，每种颜色的发光层可以通过一次喷墨打印工艺形成，不同颜色的发光层可以通过多次喷墨打印工艺制成，该步骤706描述的是形成一种颜色的发光层的过程，可以多次重复执行该步骤706以形成不同颜色的发光层。例如，显示基板可以红色发光层、绿色发光层和蓝色发光层，可以重复执行该步骤706三次形成红色发光层、绿色发光层和蓝色发光层，本申请实施例在此不再赘述。Those skilled in the art can easily understand that the display substrate may include light-emitting layers of different colors, the light-emitting layer of each color can be formed by one inkjet printing process, and the light-emitting layers of different colors can be formed by multiple inkjet printing processes. 706 describes the process of forming a light-emitting layer of one color, and this step 706 can be repeated multiple times to form light-emitting layers of different colors. For example, the display substrate may be a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer, and this step 706 may be repeated three times to form a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer, which will not be repeated in the embodiments of the present application.

在步骤707中、在形成有发光层的像素区中依次形成电子传输层和电子注入层。In step 707, an electron transport layer and an electron injection layer are sequentially formed in the pixel area where the light-emitting layer is formed.

可选地，可以通过蒸镀工艺在形成有发光层的像素区中依次形成电子传输层和电子注入层。Optionally, an electron transport layer and an electron injection layer may be sequentially formed in the pixel area where the light-emitting layer is formed by an evaporation process.

示例地，请参考图14，其示出了本申请实施例提供的一种在形成有发光层108的像素区P中依次形成电子传输层(英文：electron transport layer；简称：ETL)109和电子注入层(英文：electron injection layer；简称：EIL)110后的示意图。参见图14，发光层108、电子传输层109和电子注入层110沿远离衬底基板101的方向叠加。For example, please refer to FIG. 14, which shows an embodiment of the present application provides an electron transport layer (English: electron transport layer; abbreviation: ETL) 109 and electrons are sequentially formed in the pixel area P where the light-emitting layer 108 is formed. The schematic diagram behind the injection layer (English: electron injection layer; short: EIL) 110. Referring to FIG. 14, the light-emitting layer 108, the electron transport layer 109 and the electron injection layer 110 are stacked in a direction away from the base substrate 101.

可选地，电子传输层109的材料可以为电子传输材料，电子注入层110的材料可以为电子注入材料，电子传输材料例如可以为8-羟基喹啉-锂，电子注入材料例如可以为香豆素545T。可选地，在形成有发光层108的像素区P中依次形成电子传输层109和电子注入层110可以包括：首先，通过蒸镀工艺在形成有发光层108的像素区P中蒸镀电子传输材料得到电子传输层109，然后通过蒸镀工艺在形成有电子传输层109的像素区P中蒸镀电子注入材料得到电子注入层110。Optionally, the material of the electron transport layer 109 may be an electron transport material, the material of the electron injection layer 110 may be an electron injection material, the electron transport material may be 8-hydroxyquinoline-lithium, for example, and the electron injection material may be coumarone. Prime 545T. Optionally, sequentially forming the electron transport layer 109 and the electron injection layer 110 in the pixel area P where the light emitting layer 108 is formed may include: firstly, vaporizing the electron transport layer in the pixel area P where the light emitting layer 108 is formed through an evaporation process. The electron transport layer 109 is obtained from the material, and then the electron injection material is evaporated in the pixel region P where the electron transport layer 109 is formed by an evaporation process to obtain the electron injection layer 110.

在步骤708中、在形成有电子注入层的衬底基板上形成阴极，阴极通过电子注入层和电子传输层与发光层电连接。In step 708, a cathode is formed on the base substrate on which the electron injection layer is formed, and the cathode is electrically connected to the light emitting layer through the electron injection layer and the electron transport layer.

示例地，请参考图15，其示出了本申请实施例提供的一种在形成有电子注入层110的衬底基板101上形成阴极111后的示意图，参见图15，阴极111在衬底基板101上的正投影可以覆盖像素界定层105在衬底基板101上的正投影，阴极111与电子注入层110远离衬底基板101的一面电连接，其中，阴极111可以为板状电极，其中，板状电极可以是指从显示基板的正视角度(例如图15的俯视角度)看电极呈板状。由于发光层108、电子传输层109和电子注入层110沿远离衬底基板101的方向叠加，阴极111与电子注入层110远离衬底基板 101的一面连接，因此，阴极111通过电子注入层110和电子传输层109与发光层108电连接。For example, please refer to FIG. 15, which shows a schematic diagram after forming a cathode 111 on a base substrate 101 formed with an electron injection layer 110 according to an embodiment of the present application. Referring to FIG. 15, the cathode 111 is on the base substrate. The orthographic projection on 101 can cover the orthographic projection of the pixel defining layer 105 on the base substrate 101. The cathode 111 is electrically connected to the side of the electron injection layer 110 away from the base substrate 101. The cathode 111 may be a plate-shaped electrode. The plate-shaped electrode may mean that the electrode is plate-shaped when viewed from the front view angle of the display substrate (for example, the top view angle of FIG. 15). Since the light-emitting layer 108, the electron transport layer 109 and the electron injection layer 110 are superimposed in the direction away from the base substrate 101, the cathode 111 and the electron injection layer 110 are connected to the side of the base substrate 101 away from the base substrate 101. Therefore, the cathode 111 passes through the electron injection layer 110 and The electron transport layer 109 is electrically connected to the light emitting layer 108.

可选地，阴极111的材料可以为金属Mo(中文：钼)、金属Cu(中文：铜)、金属Al(中文：铝)、金属Ti(中文：钛)及其合金材料。以阴极111的材料为金属Al为例，可选地，在形成有电子注入层110的衬底基板101上形成阴极111可以包括：通过磁控溅射、热蒸发或者PECVD等工艺中的任一种在形成有电子注入层110的衬底基板101上沉积一层金属Al得到金属Al材质层，通过一次构图工艺对金属Al材质层进行处理得到阴极111。Optionally, the material of the cathode 111 may be metallic Mo (Chinese: molybdenum), metallic Cu (Chinese: copper), metallic Al (Chinese: aluminum), metallic Ti (Chinese: titanium) and alloy materials thereof. Taking the material of the cathode 111 as metal Al as an example, optionally, forming the cathode 111 on the base substrate 101 on which the electron injection layer 110 is formed may include any of magnetron sputtering, thermal evaporation, or PECVD processes. A layer of metallic Al is deposited on the base substrate 101 on which the electron injection layer 110 is formed to obtain a metallic Al material layer, and the metallic Al material layer is processed through a patterning process to obtain the cathode 111.

通过执行上述步骤706至步骤708可以得到依次叠加的空穴注入层106、空穴传输层107、发光层108、电子传输层109、电子注入层110和阴极111，空穴注入层106、空穴传输层107、发光层108、电子传输层109、电子注入层110和阴极111中相互叠加的部分可以构成发光单元，发光单元和薄膜晶体管可以构成显示单元(又称为像素单元、子像素或亚像素等)。容易理解，显示基板可以包括多个发光单元，阴极111可以为板状电极，多个发光单元可以共用一个阴极111，本申请实施例对此不作限定。By performing the above steps 706 to 708, the hole injection layer 106, the hole transport layer 107, the light emitting layer 108, the electron transport layer 109, the electron injection layer 110 and the cathode 111 can be sequentially superimposed, the hole injection layer 106, the hole The overlapping parts of the transport layer 107, the light-emitting layer 108, the electron transport layer 109, the electron injection layer 110, and the cathode 111 can constitute a light-emitting unit, and the light-emitting unit and thin film transistor can constitute a display unit (also called a pixel unit, sub-pixel or sub-pixel). Pixels, etc.). It is easy to understand that the display substrate may include multiple light-emitting units, the cathode 111 may be a plate-shaped electrode, and multiple light-emitting units may share the same cathode 111, which is not limited in the embodiment of the present application.

在步骤709中、在形成有阴极的衬底基板上形成封装层。In step 709, an encapsulation layer is formed on the base substrate on which the cathode is formed.

示例地，请参考图16，其示出了本申请实施例提供的一种在形成有阴极111的衬底基板101上形成封装层112后的示意图，封装层112可以为薄膜封装层或封装盖板，当封装层112为薄膜封装层时，封装层112可以包括交替叠加的无机层和有机层，相应地，在形成有阴极111的衬底基板101上形成封装层112可以包括：在形成有阴极111的衬底基板101上形成交替叠加的无机层和有机层；当封装层112为封装盖板时，封装层112可以为透明基板(例如玻璃基板)，相应地，在形成有阴极111的衬底基板101上形成封装层112可以包括：将封装盖板与衬底基板101相对固定设置，从而在形成有阴极111的衬底基板101上形成封装层112。For example, please refer to FIG. 16, which shows a schematic diagram of an encapsulation layer 112 formed on a base substrate 101 formed with a cathode 111 according to an embodiment of the present application. The encapsulation layer 112 may be a thin-film encapsulation layer or an encapsulation cover. When the encapsulation layer 112 is a thin-film encapsulation layer, the encapsulation layer 112 may include an inorganic layer and an organic layer alternately stacked. Accordingly, forming the encapsulation layer 112 on the base substrate 101 on which the cathode 111 is formed may include: The base substrate 101 of the cathode 111 is formed with alternately superimposed inorganic and organic layers; when the encapsulation layer 112 is an encapsulation cover plate, the encapsulation layer 112 may be a transparent substrate (for example, a glass substrate), and accordingly, in the case where the cathode 111 is formed Forming the encapsulation layer 112 on the base substrate 101 may include: fixing the encapsulation cover plate and the base substrate 101 opposite to each other, so that the encapsulation layer 112 is formed on the base substrate 101 on which the cathode 111 is formed.

执行完上述步骤701至步骤709后可以得到显示基板，换句话来讲，图16示出的是本申请实施例提供的一种显示基板的结构示意图。其中，衬底基板101可以为透明基板，例如其可以是采用玻璃、石英或透明树脂等具有一定坚固性的导光且非金属材料制成的刚性基板，或者衬底基板101可以是采用聚酰亚胺(英文：Polyimide；简称：PI)等柔性材料制成的柔性基板。当衬底基板101为柔性基板时，可以将衬底基板101设置在刚性基板上执行上述步骤701至步骤709，在执行完上述步骤701至步骤709后将刚性基板剥离得到柔性显示基板。After performing the above steps 701 to 709, a display substrate can be obtained. In other words, FIG. 16 shows a schematic structural diagram of a display substrate provided by an embodiment of the present application. Among them, the base substrate 101 may be a transparent substrate, for example, it may be a rigid substrate made of a light-guiding and non-metallic material such as glass, quartz, or transparent resin, or the base substrate 101 may be made of polyamide. A flexible substrate made of flexible materials such as polyimide (English: Polyimide; PI). When the base substrate 101 is a flexible substrate, the base substrate 101 can be placed on a rigid substrate to perform the above steps 701 to 709, and after performing the above steps 701 to 709, the rigid substrate is peeled off to obtain a flexible display substrate.

在本申请实施例中，空穴注入层106、空穴传输层107和发光层108中各个膜层均通过喷墨打印工艺制成，每个膜层的厚度可以取决于形成该膜层的溶液的浓度以及喷墨打印该溶液的时长，通过喷墨打印工艺制备膜层有助于节省制备材料(例如发光材料)，在喷墨打印工艺中，可以通过具备多个(例如128或256个)喷射口的打印喷头打印溶液，这样一来，有助于缩短膜层制备时间。In the embodiment of the present application, each film layer in the hole injection layer 106, the hole transport layer 107 and the light emitting layer 108 is made by an inkjet printing process, and the thickness of each film layer may depend on the solution forming the film layer. The concentration of the solution and the length of time for inkjet printing of the solution, the preparation of the film layer through the inkjet printing process helps to save the preparation materials (such as luminescent materials). In the inkjet printing process, it can be achieved by having multiple (such as 128 or 256) The printing nozzle of the ejection port prints the solution, which helps to shorten the film preparation time.

本申请实施例提供的显示基板的制造方法中，所涉及的一次构图工艺可以包括光刻胶涂覆、曝光、显影、刻蚀和光刻胶剥离，通过一次构图工艺对材质层(例如ITO材质层)进行处理可以包括：在材质层(例如ITO材质层)上涂覆一层光刻胶形成光刻胶层，采用掩膜版对光刻胶层进行曝光，使光刻胶层形成完全曝光区和非曝光区，之后采用显影工艺处理，使完全曝光区的光刻胶完全去除，非曝光区的光刻胶全部保留，采用刻蚀工艺对材质层(例如ITO材质层)上完全曝光区对应的区域进行刻蚀，最后剥离非曝光区的光刻胶得到相应的结构(例如阳极104)。本领域技术人员容易理解，这里是以光刻胶为正性光刻胶为例说明的，当光刻胶为负性光刻胶时，一次构图工艺的过程可以参考本段的描述，本申请实施例在此不再赘述。In the manufacturing method of the display substrate provided by the embodiment of the present application, the one patterning process involved may include photoresist coating, exposure, development, etching, and photoresist stripping. The material layer (such as ITO material Layer) processing may include: coating a layer of photoresist on a material layer (for example, an ITO material layer) to form a photoresist layer, and using a mask to expose the photoresist layer so that the photoresist layer is completely exposed Afterwards, the development process is used to remove the photoresist in the fully exposed area and all the photoresist in the non-exposed area is retained. The etching process is used to completely expose the area on the material layer (such as ITO material layer) The corresponding area is etched, and finally the photoresist in the non-exposed area is stripped to obtain the corresponding structure (for example, the anode 104). It is easy for those skilled in the art to understand that the photoresist is taken as an example for a positive photoresist. When the photoresist is a negative photoresist, the process of one patterning process can refer to the description in this paragraph. The embodiments are not repeated here.

本申请实施例提供的显示基板的制造方法步骤的先后顺序可以适当调整，步骤也可以根据情况相应增减，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化的方法，都应涵盖在本申请的保护范围之内，因此不再赘述。The sequence of steps in the manufacturing method of the display substrate provided by the embodiments of this application can be adjusted appropriately, and the steps can be increased or decreased accordingly according to the situation. Any person skilled in the art can easily think of changes within the technical scope disclosed in this application. All methods should be covered by the scope of protection of this application, so I won’t repeat them here.

综上所述，本申请实施例提供的显示基板的制造方法，由于在显示基板中，发光层的中央区域与阳极电连接，发光层的边缘区域与阳极绝缘，因此在显示基板工作过程中，发光层的中央区域发光，边缘区域不发光，即使发光层的边缘区域的厚度与中央区域的厚度存在差异，由于发光层的中央区域的厚度均匀性较好，也不会影响发光层的发光亮度的均匀性。此外，在本申请实施例中，由于像素界定层覆盖阳极的侧面，因此有助于降低阳极的侧面漏电的风险，从而降低显示基板漏电的风险。本申请提供的有助于保证发光层的发光亮度的均匀性，且有助于降低显示基板漏电的风险。本申请实施例提供的显示基板的制造方法操作简单，易于显示基板的量产。In summary, in the manufacturing method of the display substrate provided by the embodiments of the present application, in the display substrate, the central area of the light-emitting layer is electrically connected to the anode, and the edge area of the light-emitting layer is insulated from the anode. Therefore, during the operation of the display substrate, The central area of the light-emitting layer emits light, and the edge area does not emit light. Even if the thickness of the edge area of the light-emitting layer is different from the thickness of the central area, since the thickness of the central area of the light-emitting layer is better, it will not affect the light-emitting brightness of the light-emitting layer. The uniformity. In addition, in the embodiments of the present application, since the pixel defining layer covers the side surface of the anode, it helps to reduce the risk of leakage of the side surface of the anode, thereby reducing the risk of leakage of the display substrate. The present application helps to ensure the uniformity of the light-emitting brightness of the light-emitting layer and helps reduce the risk of leakage of the display substrate. The manufacturing method of the display substrate provided by the embodiment of the present application is simple to operate and easy to mass produce the display substrate.

本领域技术人员容易理解，本申请实施例提供的显示基板及其制造方法的实施例可以相互参考，关于显示基板实施例中未披露的细节可以参考其制造方法实施例，关于显示基板的制造方法实施例中未披露的细节可以参考显示基板实施例，本申请实施例在此不再赘述。Those skilled in the art can easily understand that the embodiments of the display substrate and the manufacturing method thereof provided in the embodiments of the present application can be referred to each other. For details that are not disclosed in the embodiments of the display substrate, reference may be made to the embodiment of the manufacturing method, and the manufacturing method of the display substrate For details not disclosed in the embodiments, reference may be made to the embodiments of the display substrate, and the details of the embodiments of the present application are not repeated here.

基于同样的发明构思，本申请实施例还提供了一种显示装置，该显示装置可以包括上述实施例提供的显示基板，该显示装置可以为电致发光显示装置，且可以是柔性显示装置。Based on the same inventive concept, embodiments of the present application also provide a display device, which may include the display substrate provided in the above-mentioned embodiments, and the display device may be an electroluminescent display device or a flexible display device.

可选地，该显示装置可以为电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪或可穿戴设备等任何具有显示功能的产品或部件。Optionally, the display device may be any product or component with a display function, such as electronic paper, mobile phone, tablet computer, television, monitor, notebook computer, digital photo frame, navigator, or wearable device.

在本申请中，术语“电连接”指的是连接且能够传输电荷，但不必然有电荷传输，例如，A与B电连接表示A与B连接且A与B之间能够传输电荷，但是A与B之间并不必然有电荷传输。In this application, the term "electrically connected" refers to the connection and the ability to transfer charges, but not necessarily charge transfer. For example, A and B are electrically connected to mean that A and B are connected and A and B can transfer charges, but A There is not necessarily charge transfer with B.

本领域普通技术人员可以理解实现上述实施例的全部或部分步骤可以通过硬件来完成，也可以通过程序来指令相关的硬件完成，所述的程序可以存储于一种计算机可读存储介质中，上述提到的存储介质可以是只读存储器，磁盘或光盘等。Those of ordinary skill in the art can understand that all or part of the steps in the foregoing embodiments can be implemented by hardware, or by a program instructing relevant hardware to be completed. The program can be stored in a computer-readable storage medium. The storage medium mentioned can be a read-only memory, a magnetic disk or an optical disk, etc.

以上所述仅为本申请的可选实施例，并不用以限制本申请，凡在本申请的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本申请的保护范围之内。The above are only optional embodiments of this application and are not intended to limit this application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this application shall be included in the protection of this application Within range.

Claims

一种显示基板，包括：A display substrate includes:

衬底基板，以及，依次位于所述衬底基板上的阳极、像素界定层和发光层；A base substrate, and, an anode, a pixel defining layer, and a light-emitting layer sequentially located on the base substrate;

所述像素界定层包括像素区，所述阳极至少部分位于所述像素区中，所述发光层位于所述像素区中，所述发光层的中央区域与所述阳极电连接，所述发光层的边缘区域与所述阳极绝缘。The pixel defining layer includes a pixel area, the anode is at least partially located in the pixel area, the light-emitting layer is located in the pixel area, a central area of the light-emitting layer is electrically connected to the anode, and the light-emitting layer The edge area is insulated from the anode.
根据权利要求1所述的显示基板，其中，The display substrate according to claim 1, wherein:

所述像素界定层包括：基体层、位于所述基体层远离所述衬底基板一侧的挡墙结构，以及由所述挡墙结构限定的所述像素区，所述基体层至少部分位于所述像素区中，所述基体层位于所述像素区中的部分具有阳极开口，所述发光层的中央区域通过所述阳极开口与所述阳极电连接，所述发光层的边缘区域与所述基体层连接，使所述发光层的边缘区域与所述阳极绝缘。The pixel defining layer includes: a base layer, a retaining wall structure located on a side of the base layer away from the base substrate, and the pixel area defined by the retaining wall structure, the base layer being at least partially located In the pixel area, the portion of the base layer located in the pixel area has an anode opening, the central area of the light-emitting layer is electrically connected to the anode through the anode opening, and the edge area of the light-emitting layer is connected to the The base layer is connected to insulate the edge area of the light-emitting layer from the anode.
根据权利要求2所述的显示基板，其中，所述显示基板还包括：The display substrate according to claim 2, wherein the display substrate further comprises:

位于所述衬底基板上的平坦层，所述阳极、所述像素界定层和所述发光层位于所述平坦层远离所述衬底基板的一侧；A flat layer located on the base substrate, the anode, the pixel defining layer and the light-emitting layer are located on a side of the flat layer away from the base substrate;

所述平坦层具有凸起结构，所述像素区在所述衬底基板上的正投影覆盖所述凸起结构在所述衬底基板上的正投影，所述阳极至少位于所述凸起结构远离所述衬底基板的一面上，所述基体层远离所述衬底基板的一面与所述阳极远离所述衬底基板的一面平齐，使所述基体层位于所述像素区中的部分具有所述阳极开口。The flat layer has a raised structure, the orthographic projection of the pixel area on the base substrate covers the orthographic projection of the raised structure on the base substrate, and the anode is at least located in the raised structure The side away from the base substrate, the side of the base layer away from the base substrate is flush with the side of the anode away from the base substrate, so that the base layer is located in the pixel area It has the anode opening.
根据权利要求3所述的显示基板，其中，The display substrate according to claim 3, wherein:

所述阳极覆盖所述凸起结构远离所述衬底基板的一面和所述凸起结构的侧面，所述像素界定层覆盖所述阳极的侧面。The anode covers a side of the protrusion structure away from the base substrate and the side surface of the protrusion structure, and the pixel defining layer covers the side surface of the anode.
根据权利要求3或4所述的显示基板，其中，The display substrate according to claim 3 or 4, wherein:

所述阳极的纵截面呈拱形。The longitudinal section of the anode is arched.
根据权利要求1至5任一所述的显示基板，其中，所述显示基板还包括：The display substrate according to any one of claims 1 to 5, wherein the display substrate further comprises:

位于所述发光层远离所述衬底基板一侧的阴极，所述阴极与所述发光层电连接。A cathode located on a side of the light emitting layer away from the base substrate, and the cathode is electrically connected to the light emitting layer.
根据权利要求6所述的显示基板，其中，所述显示基板还包括：8. The display substrate of claim 6, wherein the display substrate further comprises:

位于所述像素区中的空穴注入层和空穴传输层，所述空穴注入层和所述空穴传输层沿远离所述衬底基板的方向分布在所述阳极与所述发光层之间，所述发光层的中央区域通过所述空穴传输层和所述空穴注入层与所述阳极电连接。A hole injection layer and a hole transport layer located in the pixel area, the hole injection layer and the hole transport layer are distributed between the anode and the light emitting layer in a direction away from the base substrate Meanwhile, the central region of the light-emitting layer is electrically connected to the anode through the hole transport layer and the hole injection layer.
根据权利要求6或7所述的显示基板，其中，所述显示基板还包括：The display substrate according to claim 6 or 7, wherein the display substrate further comprises:

位于所述像素区中的电子传输层和电子注入层，所述电子传输层和所述电子注入层沿远离所述衬底基板的方向分布在所述发光层与所述阴极之间，所述阴极通过所述电子注入层和所述电子传输层与所述发光层电连接。An electron transport layer and an electron injection layer located in the pixel area, the electron transport layer and the electron injection layer are distributed between the light-emitting layer and the cathode in a direction away from the base substrate, the The cathode is electrically connected to the light-emitting layer through the electron injection layer and the electron transport layer.
根据权利要求6至8任一所述的显示基板，其中，所述显示基板还包括：8. The display substrate according to any one of claims 6 to 8, wherein the display substrate further comprises:

位于所述衬底基板与所述阳极之间的薄膜晶体管，以及，位于所述阴极远离所述衬底基板一侧的封装层。A thin film transistor located between the base substrate and the anode, and an encapsulation layer located on the side of the cathode away from the base substrate.
根据权利要求1至9任一所述的显示基板，其中，The display substrate according to any one of claims 1 to 9, wherein:

所述显示基板为电致发光显示基板，所述发光层为电致发光层。The display substrate is an electroluminescence display substrate, and the light-emitting layer is an electroluminescence layer.
一种显示基板的制造方法，包括：A method for manufacturing a display substrate includes:

在衬底基板上依次形成阳极和像素界定层，所述像素界定层包括像素区，所述阳极至少部分位于所述像素区中；An anode and a pixel defining layer are sequentially formed on a base substrate, the pixel defining layer includes a pixel area, and the anode is at least partially located in the pixel area;

在所述像素区中形成发光层，所述发光层的中央区域与所述阳极电连接，所述发光层的边缘区域与所述阳极绝缘。A light emitting layer is formed in the pixel area, a central area of the light emitting layer is electrically connected to the anode, and an edge area of the light emitting layer is insulated from the anode.
根据权利要求11所述的方法，其中，The method of claim 11, wherein:

所述像素界定层包括：基体层、位于所述基体层远离所述衬底基板一侧的挡墙结构，以及由所述挡墙结构限定的所述像素区，所述基体层至少部分位于所述像素区中，所述基体层位于所述像素区中的部分具有阳极开口，所述发光层的中央区域通过所述阳极开口与所述阳极电连接，所述发光层的边缘区域与所述基体层连接。The pixel defining layer includes: a base layer, a retaining wall structure located on a side of the base layer away from the base substrate, and the pixel area defined by the retaining wall structure, the base layer being at least partially located In the pixel area, the portion of the base layer located in the pixel area has an anode opening, the central area of the light-emitting layer is electrically connected to the anode through the anode opening, and the edge area of the light-emitting layer is connected to the The base layer is connected.
根据权利要求12所述的方法，其中，The method of claim 12, wherein:

在衬底基板上依次形成阳极和像素界定层之前，所述方法还包括：Before sequentially forming the anode and the pixel defining layer on the base substrate, the method further includes:

在衬底基板上形成平坦层，所述平坦层具有凸起结构；Forming a flat layer on the base substrate, the flat layer having a convex structure;

所述在衬底基板上依次形成阳极和像素界定层，包括：The step of sequentially forming an anode and a pixel defining layer on a base substrate includes:

在形成有所述平坦层的衬底基板上依次形成阳极和像素界定层，所述像素区在所述衬底基板上的正投影覆盖所述凸起结构在所述衬底基板上的正投影，所述阳极至少位于所述凸起结构远离所述衬底基板的一面上，所述基体层远离所述衬底基板的一面与所述阳极远离所述衬底基板的一面平齐，使所述基体层位于所述像素区中的部分具有所述阳极开口。An anode and a pixel defining layer are sequentially formed on the base substrate on which the flat layer is formed, and the orthographic projection of the pixel area on the base substrate covers the orthographic projection of the convex structure on the base substrate The anode is located at least on the side of the protruding structure away from the base substrate, and the side of the base layer away from the base substrate is flush with the side of the anode away from the base substrate. The portion of the base layer located in the pixel area has the anode opening.
根据权利要求13所述的方法，其中，The method according to claim 13, wherein:

所述阳极覆盖所述凸起结构远离所述衬底基板的一面和所述凸起结构的侧面，所述像素界定层覆盖所述阳极的侧面。The anode covers a side of the protrusion structure away from the base substrate and the side surface of the protrusion structure, and the pixel defining layer covers the side surface of the anode.
根据权利要求13或14所述的方法，其中，The method according to claim 13 or 14, wherein:

所述阳极的纵截面呈拱形。The longitudinal section of the anode is arched.
根据权利要求11至15任一所述的方法，其中，The method according to any one of claims 11 to 15, wherein:

在所述像素区中形成发光层之后，所述方法还包括：After forming the light-emitting layer in the pixel area, the method further includes:

在形成有所述发光层的衬底基板上形成阴极，所述阴极与所述发光层电连接。A cathode is formed on the base substrate on which the light-emitting layer is formed, and the cathode is electrically connected to the light-emitting layer.
根据权利要求16所述的方法，其中，The method of claim 16, wherein:

在所述像素区中形成发光层之前，所述方法还包括：Before forming the light-emitting layer in the pixel area, the method further includes:

在所述像素区中依次形成空穴注入层和空穴传输层，所述空穴注入层和所述空穴传输层沿远离所述衬底基板的方向叠加；A hole injection layer and a hole transport layer are sequentially formed in the pixel area, and the hole injection layer and the hole transport layer are superimposed in a direction away from the base substrate;

所述在所述像素区中形成发光层，包括：The forming a light-emitting layer in the pixel area includes:

在形成有所述空穴传输层的所述像素区中形成发光层，所述空穴传输层和所述发光层沿远离所述衬底基板的方向叠加，所述发光层的中央区域通过所述空穴传输层和所述空穴注入层与所述阳极电连接。A light emitting layer is formed in the pixel area where the hole transport layer is formed, the hole transport layer and the light emitting layer are superimposed in a direction away from the base substrate, and the central area of the light emitting layer passes through the The hole transport layer and the hole injection layer are electrically connected to the anode.
根据权利要求17所述的方法，其中，The method of claim 17, wherein:

在所述像素区中形成发光层之后，所述方法还包括：After forming the light-emitting layer in the pixel area, the method further includes:

在形成有所述发光层的所述像素区中依次形成电子传输层和电子注入层，所述发光层、所述电子传输层和所述电子注入层沿远离所述衬底基板的方向叠加；An electron transport layer and an electron injection layer are sequentially formed in the pixel area where the light emitting layer is formed, and the light emitting layer, the electron transport layer, and the electron injection layer are superimposed in a direction away from the base substrate;

所述在形成有所述发光层的衬底基板上形成阴极，包括：The forming a cathode on the base substrate on which the light-emitting layer is formed includes:

在形成有所述电子注入层的衬底基板上形成阴极，所述阴极通过所述电子注入层和所述电子传输层与所述发光层电连接。A cathode is formed on the base substrate on which the electron injection layer is formed, and the cathode is electrically connected to the light-emitting layer through the electron injection layer and the electron transport layer.
根据权利要求18所述的方法，其中，The method of claim 18, wherein:

所述在所述像素区中依次形成空穴注入层和空穴传输层，包括：The step of sequentially forming a hole injection layer and a hole transport layer in the pixel area includes:

通过喷墨打印工艺在所述像素区中依次形成空穴注入层和空穴传输层；Sequentially forming a hole injection layer and a hole transport layer in the pixel area through an inkjet printing process;

所述在所述像素区中形成发光层，包括：The forming a light-emitting layer in the pixel area includes:

通过喷墨打印工艺在所述像素区中形成发光层；Forming a light-emitting layer in the pixel area through an inkjet printing process;

所述在形成有所述发光层的所述像素区中依次形成电子传输层和电子注入层，包括：The step of sequentially forming an electron transport layer and an electron injection layer in the pixel region where the light-emitting layer is formed includes:

通过蒸镀工艺在形成有所述发光层的所述像素区中依次形成电子传输层和电子注入层。An electron transport layer and an electron injection layer are sequentially formed in the pixel region where the light-emitting layer is formed by an evaporation process.
根据权利要求16至19任一所述的方法，其中，The method according to any one of claims 16 to 19, wherein:

在衬底基板上依次形成阳极和像素界定层之前，所述方法还包括：Before sequentially forming the anode and the pixel defining layer on the base substrate, the method further includes:

在衬底基板上形成薄膜晶体管；Forming a thin film transistor on the base substrate;

所述在衬底基板上依次形成阳极和像素界定层，包括：在形成有所述薄膜晶体管的衬底基板上依次形成阳极和像素界定层；The step of sequentially forming an anode and a pixel defining layer on a base substrate includes: sequentially forming an anode and a pixel defining layer on the base substrate on which the thin film transistor is formed;

在形成有所述发光层的衬底基板上形成阴极之后，所述方法还包括：在形成有所述阴极的衬底基板上形成封装层。After forming a cathode on the base substrate on which the light-emitting layer is formed, the method further includes: forming an encapsulation layer on the base substrate on which the cathode is formed.
一种显示装置，包括权利要求1至10任一所述的显示基板。A display device comprising the display substrate according to any one of claims 1 to 10.