CN105552047B - A kind of AlGaN/GaN HEMT transistor fabrication process - Google Patents
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Abstract
The present invention proposes a kind of AlGaN/GaN HEMT transistors and its manufacture method, wherein device source electrode and drain electrode is directly realized by the connection that SiC substrate is used with device by the material of a high heat conductance, and caused heat passes through the high thermal conductivity material being connected with source electrode and drain electrode and realizes radiating to SiC substrate under device gate electrode；Device gate electrode is also connected by the AlGaN/GaN HEMT devices in the present invention in the presence of the material of a high heat conductance with SiC substrate, caused heat passes through the high thermal conductivity material that is connected with gate electrode and realizes radiating to SiC substrate under device gate electrode, further enhances the heat-sinking capability of device.
Description
Technical field
The present invention proposes a kind of AlGaN/GaN HEMT transistors and its manufacture method, belongs to HEMT
Field.
Background technology
Aluminum gallium nitride compound (AlGaN)/gallium nitride (GaN) HEMT (HEMT) is used as the loose taboo of the third generation
There is bigger power output, wider bandwidth of operation and more high workload efficiency and stronger radioresistance with compound semiconductor device
The advantages such as ability, make it have a extensive future.It is high that the big power output of AlGaN/GaN HEMT microwave power devices has benefited from it
Power density, existing report GaN microwave power devices output power density is up to more than 30W/mm (Wu et al.IEEE
Electron Device Lett., Vol.25, No.3, pp.117-119,2004.), but the AlGaN/GaN released at this stage
The output power density of HEMT Microwave Power Tubes and power MMIC products generally only has 35W/mm, the maximum power output with report
Density difference is very remote.Cause a relatively low maximum reason of AlGaN/GaN HEMT microwave power device output of products power densities
Heat when being device work in raceway groove can not effectively be dissipated so that further the junction temperature after lifting device power density will
Remote super device can carry out the maximum junction temperature of reliably working.It is therefore desirable to strengthen the heat-sinking capability of device so that AlGaN/GaN
Heat when HEMT device works effectively is dissipated, and junction temperature during reducing work, gives full play to AlGaN/GaN HEMT devices
The powerful advantage of part.
Want the heat-sinking capability of REINFORCED Al GaN/GaN HEMT devices, it is necessary first to which understanding influences the ring collar of device radiating
Section.It is the general structure and the device heat transfer process of the AlGaN/GaN HEMT devices using SiC as substrate shown in Fig. 1
Schematic diagram, in raceway groove caused heat to be finally scattered to by GaN cushions, nucleating layer and SiC substrate device it is heat sink on,
The wherein thermal conductivity of SiC substrate can reach 400W/mK, and GaN cushions and nucleating layer be because defect concentration is higher, thermal conductivity
Rate is far below the thermal conductivity of SiC substrate, turns into the bottleneck for restricting that heat heat sink dissipates in GaN device raceway groove.
For REINFORCED Al GaN/GaN HEMT device heat-sinking capabilities, a kind of method is by lifting GaN cushions and nucleating layer
Crystal mass to improve its thermal conductivity, but the theoretic thermal conductivity highest of GaN material also only has 150W/mK, its extension material
Even if material crystal mass is still the bottleneck of device radiating when reaching perfect condition.For GaN cushions and nucleating layer, this dissipates
Hot bottleneck, another method are that GaN epitaxy material is transferred in the more preferable diamond substrate of heat conduction, as shown in Fig. 2 remove into
Stratum nucleare, GaN cushions only retain very thin one layer, and influence of the epitaxial layer to radiating is preferably minimized, led simultaneously because introducing
The more preferable diamond substrate material of hot property, it is contemplated that device integral heat sink performance will lift more than 3 times (F.Faili et
Al.Development of III-Nitride HEMTs on CVD Diamond Substrates, CS MANTECH
Conference, 2011.).The difficult point of this method is GaN epitaxial layer being thinned to degree as thin as possible but epitaxial layer performance
Significant degradation does not occur, and the GaN epitaxial layer after being thinned is bonded in diamond substrate, is bonded material used on the one hand
Compatible follow-up device technology is wanted, while larger thermal resistance can't be additionally introduced.Based on this method, it has been successfully realized at present
Development (the M.Tyhach et al.Comparison of GaN on Diamond with of diamond substrate GaN HEMT samples
GaN on SiC HEMT and MMIC Performance, CS MANTECH Conference, 2012.), but develop
Device performance still needs to be further improved, it is therefore expected that also many critical processes need further to be broken through.
Because caused heat will be finally scattered to by GaN cushions, nucleating layer and SiC substrate in GaN device raceway groove
Device it is heat sink on, wherein GaN cushions, nucleating layer are all main bottlenecks to vertical and horizontal radiating, and are entered below the raceway groove
Hand is larger to improve device heat-sinking capability technical difficulty, and changing a kind of thinking is started with above raceway groove to improve the heat radiation energy of device
Power, and it is technically more easy.Start with being concentrated mainly at present improving the research of device heat-sinking capability above raceway groove and change
In kind device heatsink transverse ability, as shown in Figure 3, it is common practice to there is high heat conductance in device source-drain electrode overlying lid
Material, the heat of device channel region is laterally guided, technical this method radiates compared with starting with below raceway groove to improve device
Ability is more simple.The key point for laterally guiding heat above device channel is to select the material with high heat conductance
Material, theory analysis show to use the grapheme material for being up to 2000W/mK with thermal conductivity to may be such that device thermal resistance declines about percentage
20 (Zhong Yan et al.Graphene quilts for thermal management of high-power
GaN transistors.Nat.Commun.3：827doi：10.1038/ncomms1828,2012.), this radiating improves phase
Compared with start with below the raceway groove reach more than 3 times to improve device heat-sinking capability effect from the point of view of have certain gap, it is therefore desirable to enter
One step is improved.Longitudinal direction mainly uses flip chip technology to improve the approach of radiating above GaN device raceway groove, for
For AlGaN/GaN HEMT high power devices, in order to realize good radiating effect, the quality of upside-down mounting, alignment precision all will be
A major challenge, its difficulty, which is no less than, starts with above raceway groove to improve the heat-sinking capability of device.
Method shown in Fig. 3 is mainly used in improving device heatsink transverse ability, is by GaN device the shortcomings that this method
Heat in raceway groove also needs to finally be scattered to device longitudinally through GaN cushions, nucleating layer and SiC substrate after laterally scattering
On heat sink, and GaN cushions and the nucleating layer capacity of heat transmission are very poor, and horizontal conductive force will be caused to have a greatly reduced quality.In other Fig. 3
It is by by the material and AlGaN/GaN of high heat conductance that shown method, which improves the horizontal heat-sinking capabilities of AlGaN/GaN HEMT,
HEMT device source electrode is connected to realize with drain electrode, and device heating area is concentrated mainly under gate electrode, apart from source electrode
Or drain electrode, generally more than 1 μm, this distance is suitable with the thickness of nucleating layer etc. with GaN cushions, on radiating is improved
Effect is further made a discount.It is contemplated that the material of high heat conductance is connected with AlGaN/GaN HEMT device gate electrodes
Further improve the radiating of device, because under gate electrode being the hot generating region of device, such method more contributes to improve
The heat-sinking capability of device.
The content of the invention
Goal of the invention：The present invention proposes a kind of AlGaN/GaN HEMT transistors and its manufacture method, enhances device
Heat-sinking capability.
Technical scheme：The present invention proposes a kind of AlGaN/GaN HEMT transistors, including the device body on substrate,
The device body comprises at least the part of source electrode, drain electrode, grid, GaN cushions and AlGaN potential barrier, at least device body
Surface is covered by Heat Conduction Material.
Preferably, the device body is platform shape structure.Described shape structure is truncated cone-shaped or square table.Described shape knot
Structure side is with substrate in 60 to 75 degree angles.The surface of the device body is completely covered by Heat Conduction Material, but the source electrode, leakage
The Heat Conduction Material of insulation is covered between pole and grid.The surface of the device body is completely covered by diamond.
A kind of AlGaN/GaN HEMT transistor fabrication process, comprises the following steps：
1) device body is formed on substrate, the device body includes nucleating layer, GaN cushions and AlGaN potential barrier；
2) device body is made into platform shape structure；
3) in AlGaN potential barrier and platform shape texture edge forms source electrode and drain electrode, between source electrode and drain electrode
AlGaN potential barrier upper surface makes grid；
4) dielectric layer is formed on source electrode, drain electrode, grid, AlGaN potential barrier upper surface and substrate；
5) dielectric layer on source electrode, drain electrode and substrate is removed；
6) the first heat-conducting layer is electroplated in the substrate top surface of source electrode side and the side stage shape texture edge, drain side
Substrate top surface and the side stage shape texture edge electroplate the second heat-conducting layer；
7) dielectric layer on grid is removed, in the first heat-conducting layer, the second heat-conducting layer, grid and the remaining medium of step 5)
The 3rd heat-conducting layer is formed on layer, and the 3rd heat-conducting layer is insulating materials.
A kind of AlGaN/GaN HEMT transistor fabrication process, comprises the following steps：
1) device body is formed on substrate, the device body includes nucleating layer, GaN cushions and AlGaN potential barrier；
2) device body is made into platform shape structure；
3) in AlGaN potential barrier and platform shape texture edge forms source electrode and drain electrode；
4) dielectric layer is formed on source electrode, drain electrode, AlGaN potential barrier upper surface and substrate；
5) dielectric layer on source electrode, drain electrode and substrate is removed；
6) thermal insulation layer is formed on the surface of platform shape structure and substrate；
7) in platform shape structural top heat-conducting layer and dielectric layer perforate, and in forming grid in hole.
Beneficial effect：The material that AlGaN/GaN HEMT devices source electrode and drain electrode in the present invention pass through a high heat conductance
Material is directly realized by the connection that SiC substrate is used with device, and caused heat passes through and source electrode and electric leakage under device gate electrode
Extremely connected high thermal conductivity material realizes the radiating to SiC substrate；AlGaN/GaN HEMT devices in the present invention also have one
Device gate electrode is connected by the material of high heat conductance with SiC substrate, caused heat process and gate electrode under device gate electrode
Connected high thermal conductivity material realizes the radiating to SiC substrate, further enhances the heat-sinking capability of device.
Brief description of the drawings
Fig. 1 is the structure and heat transfer process schematic diagram of the AlGaN/GaN HEMT devices of existing SiC substrate；
Fig. 2 is the structure and heat transfer process schematic diagram of existing diamond substrate AlGaN/GaN HEMT devices；
Fig. 3 is the method schematic diagram of existing improvement device heatsink transverse ability；
Fig. 4 is existing AlGaN/GaN HEMT-structures schematic diagram；
Fig. 5 is AlGaN/GaN HEMT-structure schematic diagrames in embodiment 1；
Fig. 6 is the structural representation of substrate in embodiment, nucleating layer, GaN cushions and AlGaN potential barrier；
Fig. 7 is the device body platform shape structural representation on substrate in embodiment；
Fig. 8 is the structural representation above AlGaN potential barrier after deposit source electrode, grid and drain electrode in embodiment 1；
Fig. 9 is the structural representation after device dielectric layer deposited in embodiment 1；
Figure 10 is the structural representation that device deposits after the first heat-conducting layer and the second heat-conducting layer in embodiment 1；
Figure 11 is to deposit the structural representation after source electrode and drain electrode in embodiment 2 above AlGaN potential barrier；
Figure 12 is the structural representation after device dielectric layer deposited in embodiment 2；
Figure 13 is to etch the structural representation after unnecessary dielectric layer in embodiment 2；
Figure 14 is that the structural representation after grid is deposited in embodiment 2.
Embodiment
Below in conjunction with the accompanying drawings and specific embodiment, the present invention is furture elucidated, it should be understood that these embodiments are merely to illustrate
The present invention rather than limitation the scope of the present invention, after the present invention has been read, those skilled in the art are each to the present invention's
The modification of kind equivalents falls within the application appended claims limited range.
It is alleged in description of the invention, claims and Figure of description " under " be close to the direction of substrate, it is alleged
" on " it is the direction away from substrate.
Embodiment 1：As shown in figure 4, classical AlGaN/GaN HEMT-structures and operation principle is similar to FET, by
Under be up provided with substrate, A1N cushions, GaN layer and AlGaN layer.Electric current is all from source electrode stream under the control of grid voltage
To drain electrode.In GaN and AlGaN interface due to the discontinuity of conduction band, triangular quantum well can be formed, so as in GaN sides
Assemble many electronics, two-dimensional electron gas (2DEG) is formed, so as to form AlGaN/GaN HEMT conducting channel.Wherein source electrode and
Drain electrode is generally Ohmic contact, and grid is Schottky contacts.
As shown in figure 5, the present embodiment transistor device includes substrate 51, nucleating layer 52, GaN cushions successively from the bottom to top
53 and AlGaN potential barrier 54.On substrate 51, nucleating layer 52, GaN cushions 53 and AlGaN potential barrier 54 form device sheet
Body, device body are platform shape structure.Nucleating layer 52 is located at the orlop of platform shape structure, and its width is maximum.AlGaN potential barrier 54
It is minimum in the superiors, its width.Fig. 5 gives source electrode 55 and the sectional view in the 56 place sections that drain, and described shape structure can be with
It is the platform shape such as truncated cone-shaped or square table.Source electrode 55 and drain electrode 56 cover the part at platform shape structural top edge, while also edge
The side for platform shape structure extends downward into substrate 51, covers a part of side of platform shape structure.In platform shape structural top also
The grid 57 and dielectric layer 58 positioned at same level, grid 57 and dielectric layer 58 are made.The dielectric layer 58 is silicon nitride
Or silicon oxide deposition forms.
Source electrode 55 and drain electrode 56 use multiple layer metal system, including Ti/Al/Ni/Au, Ti/Al/Mo/Au etc..Wherein Ni with
AlGaN potential barrier 54 under it forms Schottky contacts, and Au major amounts reduce grid resistance, lift the frequency characteristic of device, Pt, Ti
Exist Deng metal as specific assistant metal.
In order to be radiated from all directions, the present invention the whole side of the upper surface of substrate 51, platform shape structure with
And top all deposited heat-conducting layer.The wherein side of platform shape structure is the first heat-conducting layer 59, and opposite side is the second heat-conducting layer 60, device
It is the 3rd heat-conducting layer 61 at the top of part.First heat-conducting layer 59 and the second heat-conducting layer 60 can use identical Heat Conduction Material, can also
Using different Heat Conduction Materials, the Heat Conduction Material selected by specific the present embodiment is gold.The material selection of 3rd heat-conducting layer 61 is then
Different, in order to prevent that short circuit occurs between grid 57 and source electrode 55, drain electrode 56, the 3rd heat-conducting layer 61 should select non-conductive
Heat Conduction Material, such as diamond.From the angle of conduction heat, inclined shape texture edge, relative to the perpendicular of existing device
Straight sided (such as Fig. 4), it is bigger with the contact area of the first heat-conducting layer 59 and the second heat-conducting layer 60, is more beneficial for radiating.
The present embodiment also proposes a kind of radiating REINFORCED Al GaN/GaN HEMT transistor fabrication process.As shown in fig. 6, first
Device body is formed on substrate 51.The substrate 51 is one in Sapphire Substrate, GaAs substrates, SiC substrate or GaN substrate
Kind.
The device body includes nucleating layer 52, GaN cushions 53 and AlGaN potential barrier 54 from bottom to top.Specifically,
It is about 30nm nucleating layers 52 in 520 degrees Celsius of lower growth thickness, then high growth temperature 1um GaN cushions 53, then keep
520 degrees Celsius of continued growth AlGaN potential barriers 54.
As shown in fig. 7, using reactive ion etching (RIE) or inductively coupled plasma etching (ICP) by substrate 51
Device body be etched into platform shape structure.Nucleating layer 52 is located at the orlop of platform shape structure, and its width is maximum.AlGaN potential barrier
54 are located at the superiors, and its width is minimum.Described shape structure is platform shape, the side of platform shape structure and the linings such as truncated cone-shaped or square table
Bottom 51 is into certain inclination angle, and the inclination angle span is between 60 to 75 degree.So nucleating layer 52 is most wide, and AlGaN potential barriers
Layer 54 is most narrow.
As shown in figure 8, source electrode 55 and drain electrode 56, between the two 2 to 5 microns of spacing are deposited above AlGaN potential barrier 54.
Source electrode 55 and drain electrode 56 cover the part at platform shape structural top edge, while are extended downwardly also along the side of platform shape structure
To substrate 51, a part of side of platform shape structure is covered.Deposit forms grid 57 between source electrode 55 and drain electrode 56.Grid
57th, source electrode 55 and drain electrode 56 use multiple layer metal system, such as Ti/Al/Ni/Au, Ti/Al/Mo/Au etc..In order to reduce contact
Resistance, grid 57, source electrode 55 and drain electrode 56 are annealed by 800 to 850 celsius temperatures, side and upper surface with platform shape structure
Form Ohmic contact.
As shown in figure 9, device surface deposit one layer of dielectric layer 58, the dielectric layer 58 cover simultaneously source electrode 55, drain 56,
Grid 57, the upper surface of AlGaN potential barrier 54 and substrate 51.The method of deposit can be in sputtering, electron beam evaporation, PECVD
One kind, the material of dielectric layer 58 is silicon nitride or silica.
Then the dielectric layer on source electrode 55, drain electrode 56 and substrate 51 is removed using dry etching.So only positioned at source
The upper surface of AlGaN potential barrier 54 between pole 55, grid 57 and drain electrode 56, and the upper surface of grid 57 remain with dielectric layer.
Then the first heat-conducting layer 59, leakage are electroplated in the upper surface of substrate 51 of the side of source electrode 55 and the side stage shape texture edge
The upper surface of substrate 51 of the side of pole 56 and the side stage shape texture edge electroplate the second heat-conducting layer 60, as shown in Figure 10.From conduction
The angle of heat, inclined shape texture edge, relative to the vertical side (such as Fig. 4) of existing device, itself and the first heat-conducting layer
59 and second heat-conducting layer 60 contact area it is bigger, be more beneficial for radiating.First heat-conducting layer 59 can make with the second heat-conducting layer 60
With identical Heat Conduction Material, different Heat Conduction Materials can also be used, the Heat Conduction Material selected by specific the present embodiment is gold.For
The good heat conductivility of acquisition, golden thickness are 3-5 microns.
As shown in figure 5, the dielectric layer of the upper surface of grid 57 is removed using dry etching.Then again in the first heat-conducting layer
59th, the second heat-conducting layer 60, grid 57 and the upper surface of remaining dielectric layer 58 deposit the 3rd heat-conducting layer 61.3rd heat-conducting layer 61
Material selection is then different, and in order to prevent that short circuit occurs between grid 57 and source electrode 55, drain electrode 56, the 3rd heat-conducting layer should select
Nonconducting Heat Conduction Material is selected, the present embodiment selects diamond.The deposit of diamond uses chemical vapour deposition technique (CVD) work
Skill.
Embodiment 2：The present embodiment proposes another radiating REINFORCED Al GaN/GaN HEMT transistor fabrication process.Such as Fig. 6
It is shown, form device body on substrate 51 first.The substrate 51 is Sapphire Substrate, GaAs substrates, SiC substrate or GaN linings
One kind in bottom.
The device body includes nucleating layer 52, GaN cushions 53 and AlGaN potential barrier 54 from bottom to top.Specifically,
It is about 30nm nucleating layers 52 in 520 degrees Celsius of lower growth thickness, then high growth temperature 1um GaN cushions 53, then keep
520 degrees Celsius of continued growth AlGaN potential barriers 54.
As shown in fig. 7, using reactive ion etching (RIE) or inductively coupled plasma etching (ICP) by substrate 51
Device body be etched into platform shape structure.Nucleating layer 52 is located at the orlop of platform shape structure, and its width is maximum.AlGaN potential barrier
54 are located at the superiors, and its width is minimum.Described shape structure is platform shape, the side of platform shape structure and the linings such as truncated cone-shaped or square table
Bottom 51 is into certain inclination angle, and the inclination angle span is between 60 to 75 degree.So nucleating layer 52 is most wide, and AlGaN potential barriers
Layer 54 is most narrow.
As shown in figure 11, source electrode 55 and drain electrode 56 are deposited above AlGaN potential barrier 54, spacing 2 to 5 is micro- between the two
Rice.Source electrode 55 and drain electrode 56 cover the part at platform shape structural top edge, while downward also along the side of platform shape structure
Substrate 51 is extended to, covers a part of side of platform shape structure.
Then in the upper surface dielectric layer deposited 58 of source electrode 55, drain electrode 56, AlGaN potential barrier 54 and substrate 51, this phase
When the surface that whole device is covered in dielectric layer 58, dielectric layer 62 can be formed using pecvd process deposit silicon nitride, such as
Shown in Figure 12.
The dielectric layer on source electrode 55, drain electrode 56 and substrate 51 is then removed using dry etch process as shown in figure 13
58, remaining dielectric layer 58 is existed only in the AlGaN potential barrier 54 between source electrode 55 and drain electrode 56.Then in whole device table
Face is covered in dielectric layer 58, source electrode 55, drain electrode 56, platform shape knot using CVD techniques deposit thermal insulation layer 63, thermal insulation layer 63
Structure whole side and the upper surface of substrate 51.Therefore thermal insulation layer 63 can be that device is radiated from all directions.From biography
The angle of heat conduction amount, inclined shape texture edge, relative to the vertical side (such as Fig. 4) of existing device, itself and insulating heat-conductive
The contact area of layer 63 is bigger, is more beneficial for radiating.Thermal insulation layer 63 have selected nonconducting diamond in the present embodiment, with
Prevent that short circuit occurs between the grid 64 of source electrode 55, drain electrode 56 and subsequent technique making.
As shown in figure 14, a window is opened by thermal insulation layer 63 of the photoetching process in dielectric layer 58 and its top,
Then deposit to form grid 64 at window.Grid 64 is deposited by the way of evaporation, and adoptable metal is included but not
Be limited to the multiple layer metal system such as Ni/Au/Ti or Ni/Pt/Au/Pt/Ti or Ni/Pt/Au/Ni, wherein Ni with below
AlGaN potential barrier 54 forms Schottky contacts.
Claims (2)
1. a kind of AlGaN/GaN HEMT transistor fabrication process, it is characterised in that comprise the following steps：
1) device body is formed on substrate, the device body includes nucleating layer, GaN cushions and AlGaN potential barrier；
2) device body is made into platform shape structure；
3) in AlGaN potential barrier and platform shape texture edge forms source electrode and drain electrode, the AlGaN gesture between source electrode and drain electrode
Barrier layer upper surface makes grid；
4) dielectric layer is formed on source electrode, drain electrode, grid, AlGaN potential barrier upper surface and substrate；
5) dielectric layer on source electrode, drain electrode and substrate is removed；
6) the first heat-conducting layer, the substrate for the side that drains are electroplated in the substrate top surface of source electrode side and the side stage shape texture edge
Upper surface and the side stage shape texture edge electroplate the second heat-conducting layer；
7) dielectric layer on grid is removed, on the first heat-conducting layer, the second heat-conducting layer, grid and the remaining dielectric layer of step 5)
The 3rd heat-conducting layer is formed, and the 3rd heat-conducting layer is insulating materials.
2. a kind of AlGaN/GaN HEMT transistor fabrication process, it is characterised in that comprise the following steps：
1) device body is formed on substrate, the device body includes nucleating layer, GaN cushions and AlGaN potential barrier；
2) device body is made into platform shape structure；
3) in AlGaN potential barrier and platform shape texture edge forms source electrode and drain electrode；
4) dielectric layer is formed on source electrode, drain electrode, AlGaN potential barrier upper surface and substrate；
5) dielectric layer on source electrode, drain electrode and substrate is removed；
6) thermal insulation layer is formed on the surface of platform shape structure and substrate；
7) in platform shape structural top heat-conducting layer and dielectric layer perforate, and in forming grid in hole.
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| CN107195674B (en) * | 2017-05-22 | 2024-02-02 | 北京星云联众科技有限公司 | GaN HEMT cell structure with graphene buried source electrode and longitudinal grid electrode and preparation method |
| CN109360856B (en) * | 2018-09-03 | 2020-08-21 | 西安电子科技大学 | N-surface GaN HEMT device with high heat dissipation structure and manufacturing method |
| CN109390445B (en) * | 2018-09-03 | 2020-08-21 | 西安电子科技大学 | High-thermal-conductivity N-surface GaN epitaxial structure based on transfer technology and manufacturing method |
| CN110942990A (en) * | 2019-12-16 | 2020-03-31 | 成都大学 | AlGaN/GaN HEMT heat management method |
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