CN105551967B - N型薄膜晶体管的制作方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 48
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 60
- 239000000126 substance Substances 0.000 claims abstract description 8
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- 239000010410 layer Substances 0.000 claims description 101
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 239000011229 interlayer Substances 0.000 claims description 13
- 150000002500 ions Chemical class 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
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- -1 phosphonium ion Chemical class 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 4
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- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明提供一种N型薄膜晶体管的制作方法,在制作过程中采用化学溶液对N型薄膜晶体管的沟道区进行蚀刻,提高所述N型薄膜晶体管的沟道区内的低温多晶硅的表面粗糙度,从而提高所述N型薄膜晶体管的沟道区内的低温多晶硅的表面缺陷浓度,使制得的N型薄膜晶体管的阈值电压向正方向移动,保证制得的N型薄膜晶体管在低电压下能及时关闭,生产效率高,生产成本低。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种N型薄膜晶体管的制作方法。
背景技术
平面显示器件具有机身薄、省电、无辐射等众多优点,得到了广泛的应用。现有的平面显示器件主要包括液晶显示器件(Liquid Crystal Display,LCD)及有机发光二极管显示器件(Organic Light Emitting Display,OLED)。
在平面显示器件中,薄膜晶体管(Thin Film Transistor,TFT)一般是用作开关元件来控制像素的作业,或是用作驱动元件来驱动像素。薄膜晶体管依其硅薄膜性质通常可分成非晶硅(a-Si)与多晶硅(poly-Si)两种。
由于非晶硅本身自有的缺陷问题,如缺陷太多导致的开态电流低、迁移率低、稳定性差,使它在应用中受到限制,为了弥补非晶硅本身的缺陷,扩大其在相关领域的应用,低温多晶硅(Low Temperature Poly-Silicon,LTPS)技术应运而生。
低温多晶硅薄膜由于其原子排列规则,载流子迁移率高(10~300cm2/Vs),应用于薄膜晶体管等电子元器件时,可使薄膜晶体管具有更高的驱动电流,因此在薄膜晶体管的制作工艺中广泛采用LTPS薄膜作为薄膜晶体管的核心结构之一的有源层的材料。
采用LTPS薄膜晶体管的平面显示器件具有高分辨率、反应速度快、高亮度、高开口率等优点,加上由于LTPS薄膜晶体管的硅结晶排列较非晶硅有次序,使得电子移动率相对高100倍以上,可以将***驱动电路同时制作在玻璃基板上,达到***整合的目标,节省空间及驱动IC的成本;同时,由于驱动IC线路直接制作于面板上,可以减少组件的对外接点,增加可靠度、维护更简单、缩短组装制程时间,进而减少应用***设计时程及扩大设计自由度。通常平面显示器件上使用较多的为N型薄膜晶体管(NTFT),为了使得N型薄膜晶体管在低电压下能及时关闭,需要对N型薄膜晶体管的阈值电压进行调整(从1.0V移动至1.5V左右),现有技术中,通常采用离子植入的方法来调整N型薄膜晶体管的阈值电压,即对N型薄膜晶体管沟道区的多晶硅(Poly-si)进行低剂量硼离子植入来调整N型薄膜晶体管的阈值电压。
具体地,请参阅图1-图3,现有的N型薄膜晶体管的制作过程如下:首先,请参阅图1-2,在基板1上自下而上依次制备缓冲层2和低温多晶硅层31;在所述低温多晶硅层31上涂布光阻层5;然后通过光罩对光阻层5进行曝光显影,在所述低温多晶硅层31上定义出沟道区32;随后,对沟道区32进行低剂量的硼(B)离子植入,接着,去除所述低温多晶硅层31上的光阻层5;接下来,请参阅图3,对所述低温多晶硅层31进行蚀刻和离子掺杂,形成有源层3;最后,在所述有源层3上自下而上依次制备栅极绝缘层6、栅极7、层间绝缘层8、以及源/漏极9。上述N型薄膜晶体管的制作过程中通过在沟道区32植入硼离子来调节沟道区32内的多晶硅的空穴载流子浓度,使N型薄膜晶体管的阈值电压向正方向移动,然而该方法要用昂贵的离子植入设备在一定真空下进行,生产效率较低,生产成本较高。
发明内容
本发明的目的在于提供一种N型薄膜晶体管的制作方法,该方法能够调节N型薄膜晶体管的阈值电压,保证制得的N型薄膜晶体管在低电压下能及时关闭,且制作简单,生产效率高,生产成本低。
为实现上述目的,本发明提供了一种N型薄膜晶体管的制作方法,包括如下步骤:
步骤1、提供一衬底基板,在所述衬底基板上自下而上依次制备缓冲层、低温多晶硅层与氧化硅层所述低温多晶硅层的表层在空气中被氧化形成氧化硅层;
步骤2、在所述低温多晶硅层上涂布光阻层,并采用光罩对其进行曝光、显影后,在所述低温多晶硅层上定义出沟道区;
步骤3、采用化学溶液对所述沟道区的低温多晶硅层进行蚀刻,去除所述沟道区上方的氧化硅层,并对沟道区内的低温多晶硅进行蚀刻,提高所述沟道区内的低温多晶硅的表面粗糙度;
步骤4、对所述低温多晶硅层进行图案化处理和N型离子掺杂,形成有源层;
步骤5、在所述有源层、及缓冲层上自下而上依次制备栅极绝缘层、栅极、及层间绝缘层,采用一道光刻制程对所述栅极绝缘层、层间绝缘层、及氧化硅层进行图形化处理,得到对应于所述有源层两端的两过孔;
步骤6、在所述层间绝缘层上形成源/漏极,所述源/漏极通过两过孔与所述有源层的两端相接触。
可选的,所述步骤3中采用四甲基氢氧化铵水溶液对所述沟道区的低温多晶硅层进行蚀刻。
可选的,所述步骤3中先采用双氧水对所述沟道区的低温多晶硅层进行氧化处理,之后再采用氟化铵水溶液对所述沟道区的的低温多晶硅层进行蚀刻。
所述缓冲层、栅极绝缘层、及层间绝缘层的材料均为氧化硅、氮化硅中的一种或多种的堆栈组合。
所述步骤4中掺杂的N型离子为磷离子。
所述有源层包括位于中间的沟道区和位于所述沟道区两端的N型离子掺杂区。
所述步骤1中低温多晶硅层的具体制作过程为:先在所述缓冲层上沉积一层非晶硅,再对非晶硅进行晶化处理,制得低温多晶硅层。
所述栅极与源/漏极的材料均为钼、铝、铜中的一种或多种的堆栈组合。
本发明的有益效果:本发明提供一种N型薄膜晶体管的制作方法,在制作过程中采用化学溶液对N型薄膜晶体管的沟道区进行蚀刻,提高所述N型薄膜晶体管的沟道区内的低温多晶硅的表面粗糙度,从而提高所述N型薄膜晶体管的沟道区内的低温多晶硅的表面缺陷浓度,使制得的N型薄膜晶体管的阈值电压向正方向移动,保证制得的N型薄膜晶体管在低电压下能及时关闭,相比于现有技术,该方法使用更便宜的设备并且能做到多片基板同时生产,能够降低生产成本,提升生产效率。
附图说明
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图中,
图1为现有的N型薄膜晶体管的制作过程中对光阻层进行曝光的示意图;
图2为现有的N型薄膜晶体管的制作过程中对沟道区进行离子掺杂的示意图;
图3为现有的N型薄膜晶体管的结构示意图;
图4为本发明的N型薄膜晶体管的制作方法的示意流程图;
图5为本发明的N型薄膜晶体管的制作方法的步骤1的示意图;
图6为本发明的N型薄膜晶体管的制作方法的步骤2的示意图;
图7为本发明的N型薄膜晶体管的制作方法的步骤3的第一实施例的示意图;
图8为本发明的N型薄膜晶体管的制作方法的步骤3的第二实施例的示意图;
图9为本发明的N型薄膜晶体管的制作方法的步骤4的示意图;
图10为本发明的N型薄膜晶体管的制作方法的步骤5的示意图;
图11为本发明的N型薄膜晶体管的制作方法的步骤6的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图4,本发明提供一种N型薄膜晶体管的制作方法,包括如下步骤:
步骤1、请参阅图5,提供一衬底基板10,在所述衬底基板10上依次制备缓冲层20与低温多晶硅层310,所述低温多晶硅层310的表层在空气中被氧化形成氧化硅层40。
具体地,所述缓冲层20的材料为氧化硅、氮化硅中的一种或多种的堆栈组合。所述低温多晶硅层310的具体制作过程为:先在所述缓冲层20上沉积一层非晶硅,再对非晶硅进行晶化处理,制得低温多晶硅层310。
步骤2、请参阅图6,在所述低温多晶硅层310上涂布光阻层50,并采用光罩对其进行曝光、显影后,在所述低温多晶硅层310上定义出沟道区320。
步骤3、请参阅图7和图8,采用化学溶液对所述沟道区320的低温多晶硅层310进行蚀刻,去除所述沟道区320上方的氧化硅层40,并对沟道区320内的低温多晶硅进行蚀刻,提高所述沟道区320内的低温多晶硅的表面粗糙度。
可选地,请参阅图7,所述步骤3中采用四甲基氢氧化铵(TetramethylammoniumHydroxide,TMAH)水溶液对所述沟道区320的低温多晶硅层310进行蚀刻。优选的,所述四甲基氢氧化铵水溶液中四甲基氢氧化铵的质量百分比为5%~30%。
可选地,请参阅图8,所述步骤3中先采用双氧水对所述沟道区320的低温多晶硅层310进行进一步氧化处理,使得表层的氧化硅层40的厚度更加均匀,之后再采用氟化铵(NH4F)水溶液对所述沟道区320的低温多晶硅层310进行蚀刻。其中,双氧水和NH4F溶液可多次循环使用。优选的,所述双氧水中过氧化氢(H2O2)的体积百分比为20%~80%;所述氟化铵水溶液中氟化铵的质量百分比为3%~20%。
特别地,采用化学溶液对N型薄膜晶体管的沟道区进行蚀刻,能够提高所述N型薄膜晶体管的沟道区内的低温多晶硅的表面粗糙度,从而提高所述N型薄膜晶体管的沟道区内的低温多晶硅的表面缺陷浓度,使制得的N型薄膜晶体管的阈值电压向正方向移动,相比于现有的通过硼离子植入来调节NTFT阈值电压的方法,化学溶液蚀刻所使用的设备更加便宜,还能够多片基板同时生产,进而降低生产成本,提升生产效率。
步骤4、请参阅图9,对所述低温多晶硅层310进行图案化处理和N型离子掺杂,形成有源层30。
具体地,所述步骤4掺杂的N型离子为磷离子。所述有源层30包括位于中间的沟道区320和位于所述沟道区320两端的N型离子掺杂区330。沟道区320为未进行离子掺杂的低温多晶硅。
步骤5、请参阅图10,在所述有源层30、及缓冲层20上自下而上依次制备栅极绝缘层60、栅极70、及层间绝缘层80,采用一道光刻制程对所述栅极绝缘层60、层间绝缘层80、及氧化硅层40进行图形化处理,得到对应于所述有源层30两端的两过孔81。
具体地,所述栅极绝缘层60、及层间绝缘层80的材料均为氧化硅、氮化硅中的一种或多种的堆栈组合。
步骤6、请参阅图11,在所述层间绝缘层80上形成源/漏极90,所述源/漏极90通过两过孔81与所述有源层30的两端相接触。
具体地,所述栅极70与源/漏极90的材料均为钼、铝、铜中的一种或多种的堆栈组合。
综上所述,本发明提供一种N型薄膜晶体管的制作方法,在制作过程中采用化学溶液对N型薄膜晶体管的沟道区进行蚀刻,提高所述N型薄膜晶体管的沟道区内的低温多晶硅的表面粗糙度,从而提高所述N型薄膜晶体管的沟道区内的低温多晶硅的表面缺陷浓度,使制得的N型薄膜晶体管的阈值电压向正方向移动,保证制得的N型薄膜晶体管在低电压下能及时关闭,相比于现有技术,该方法使用更便宜的设备并且能做到多片基板同时生产,能够降低生产成本,提升生产效率。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (8)
1.一种N型薄膜晶体管的制作方法,其特征在于,包括如下步骤:
步骤1、提供一衬底基板(10),在所述衬底基板(10)上自下而上依次制备缓冲层(20)与低温多晶硅层(310),所述低温多晶硅层(310)的表层在空气中被氧化形成氧化硅层(40);
步骤2、在所述低温多晶硅层(310)上涂布光阻层(50),并采用光罩对其进行曝光、显影后,在所述低温多晶硅层(310)上定义出沟道区(320);
步骤3、采用化学溶液对所述沟道区(320)的低温多晶硅层(310)进行蚀刻,去除所述沟道区(320)上方的氧化硅层(40),并对沟道区(320)内的低温多晶硅进行蚀刻,提高所述沟道区(320)内的低温多晶硅的表面粗糙度;
步骤4、对所述低温多晶硅层(310)进行图案化处理和N型离子掺杂,形成有源层(30);
步骤5、在所述有源层(30)、及缓冲层(20)上自下而上依次制备栅极绝缘层(60)、栅极(70)、及层间绝缘层(80),采用一道光刻制程对所述栅极绝缘层(60)、层间绝缘层(80)、及氧化硅层(40)进行图形化处理,得到对应于所述有源层(30)两端的两过孔(81);
步骤6、在所述层间绝缘层(80)上形成源/漏极(90),所述源/漏极(90)通过两过孔(81)与所述有源层(30)的两端相接触。
2.如权利要求1所述的N型薄膜晶体管的制作方法,其特征在于,所述步骤3中采用四甲基氢氧化铵水溶液对所述沟道区(320)的低温多晶硅层(310)进行蚀刻。
3.如权利要求1所述的N型薄膜晶体管的制作方法,其特征在于,所述步骤3中先采用双氧水对所述沟道区(320)的低温多晶硅层(310)进行氧化处理,之后再采用氟化铵水溶液对所述沟道区(320)的低温多晶硅层(310)进行蚀刻。
4.如权利要求1所述的N型薄膜晶体管的制作方法,其特征在于,所述缓冲层(20)、栅极绝缘层(60)、及层间绝缘层(80)的材料均为氧化硅、氮化硅中的一种或多种的堆栈组合。
5.如权利要求1所述的N型薄膜晶体管的制作方法,其特征在于,所述步骤4中掺杂的N型离子为磷离子。
6.如权利要求1所述的N型薄膜晶体管的制作方法,其特征在于,所述有源层(30)包括位于中间的沟道区(320)和位于所述沟道区(320)两端的N型离子掺杂区(330)。
7.如权利要求1所述的N型薄膜晶体管的制作方法,其特征在于,所述步骤1中低温多晶硅层(310)的具体制作过程为:先在所述缓冲层(20)上沉积一层非晶硅,再对非晶硅进行晶化处理,制得低温多晶硅层(310)。
8.如权利要求1所述的N型薄膜晶体管的制作方法,其特征在于,所述栅极(70)与源/漏极(90)的材料均为钼、铝、铜中的一种或多种的堆栈组合。
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