CN105514240A - High-efficiency light emitting diode chip - Google Patents
High-efficiency light emitting diode chip Download PDFInfo
- Publication number
- CN105514240A CN105514240A CN201510918552.5A CN201510918552A CN105514240A CN 105514240 A CN105514240 A CN 105514240A CN 201510918552 A CN201510918552 A CN 201510918552A CN 105514240 A CN105514240 A CN 105514240A
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- China
- Prior art keywords
- layer
- electrode
- type
- emitting diode
- barrier layer
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- 230000004888 barrier function Effects 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000002955 isolation Methods 0.000 claims abstract description 4
- 239000012811 non-conductive material Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 230000002950 deficient Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a high-efficiency light emitting diode chip. The high-efficiency light emitting diode chip comprises a substrate, a buffer layer, an unintentional doping layer, an N-type conductive layer, an active region, an electron barrier layer, a P-type conductive layer, a P-type contact layer, a current barrier layer, an ITO conductive layer, a P electrode, an N electrode and an electrode isolation layer. According to the invention, a complex technical process is unnecessary, the manufacturing cost and the fraction defective of the high-efficiency light emitting diode chip can be reduced, the cost performance of the high-efficiency light emitting diode chip is improved, and the quality of the high-efficiency light emitting diode chip is optimized.
Description
Technical field
The present invention relates to the technical field of light-emitting diode, a kind of efficient LED chip is provided especially.
Background technology
Light-emitting diode has the little and high reliability of low-power consumption, size, and comparatively fast developed as main light source, the field that utilizes of light-emitting diode is expanded rapidly in recent years.Along with LED industry competition is more and more fierce, improves the brightness of light-emitting diode and reduce costs and become its important directions.
In order to make brightness and the better reliability of chip, chip traditional is at present included in the current barrier layer (CurrentBlockingLayer) below P-type electrode, N, P electrode, and makes chip protection layer (PV).But the not only required process time of traditional chip is longer, and the cost of chip and fraction defective all higher.
Summary of the invention
The present invention, for solving the problem, provides a kind of efficient LED chip.
To achieve these goals, the technical solution used in the present invention is:
A kind of efficient LED chip, is characterized in that: comprise
One substrate;
One resilient coating, is arranged at described substrate top surface;
One involuntary doped layer, is arranged at described resilient coating upper surface;
One N-type conductive layer, is arranged at described involuntary doped layer upper surface;
One active area, is arranged at the left part upper surface of described N-type conductive layer;
One electronic barrier layer, is arranged at described active area upper surface;
One P-type conduction layer, is arranged at described electronic barrier layer upper surface;
One P type contact layer, is arranged at described P-type conduction layer upper surface;
One current barrier layer, is arranged at the left part upper surface of described P type contact layer;
One ITO conductive layer, is arranged at the right part upper surface of described P type contact layer, and covers described P type contact layer completely with described current barrier layer;
One P electrode, is arranged at described current barrier layer upper surface;
One N electrode, is arranged at the right part of described N-type conductive layer, and the height being deep into described N-type conductive layer mixes part; And
One electrode isolation layers, be arranged at described N electrode and described active area, electronic barrier layer, P-type conduction layer, between P type contact layer and the right lateral surface of ITO conductive layer.
Preferably, also comprise a chip protection layer, be arranged at the upper surface of described efficient LED chip except P electrode and N electrode and side.
Preferably, described current barrier layer is non-conductive material layer.
Preferably, described non-conductive material layer comprises SiN, Ti
2o
3and Al
2o
3.
Adopt said structure, the present invention, without the need to the technological process of complexity, can reduce manufacturing cost and the fraction defective of efficient LED chip, improve the cost performance of light-emitting diode chip for backlight unit, optimize the quality of light-emitting diode chip for backlight unit.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, forms a part of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is structural representation of the present invention.
Embodiment
In order to make technical problem to be solved by this invention, technical scheme and beneficial effect clearly, understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
As shown in Figure 1, the invention provides a kind of efficient LED chip, comprise
One substrate;
One resilient coating, is arranged at described substrate top surface;
One involuntary doped layer, is arranged at described resilient coating upper surface;
One N-type conductive layer, is arranged at described involuntary doped layer upper surface;
One active area, is arranged at the left part upper surface of described N-type conductive layer;
One electronic barrier layer, is arranged at described active area upper surface;
One P-type conduction layer, is arranged at described electronic barrier layer upper surface;
One P type contact layer, is arranged at described P-type conduction layer upper surface;
One current barrier layer, is arranged at the left part upper surface of described P type contact layer;
One ITO conductive layer, is arranged at the right part upper surface of described P type contact layer, and covers described P type contact layer completely with described current barrier layer;
One P electrode, is arranged at described current barrier layer upper surface;
One N electrode, is arranged at the right part of described N-type conductive layer, and the height being deep into described N-type conductive layer mixes part; And
One electrode isolation layers, be arranged at described N electrode and described active area, electronic barrier layer, P-type conduction layer, between P type contact layer and the right lateral surface of ITO conductive layer.
Preferably, this efficient LED chip also comprises a chip protection layer, is arranged at the upper surface of described efficient LED chip except P electrode and N electrode and side, to play a protective role to chip.
In the present embodiment, current blocking layer material is non-conductive material layer, and non-conductive material layer preferably includes SiN, Ti
2o
3and Al
2o
3deng non-conductive material, adopt non-conductive material to deaden the sense of current of P electrode, effectively improve current expansion effect.
The present invention, without the need to the technological process of complexity, can reduce manufacturing cost and the fraction defective of efficient LED chip, improve the cost performance of light-emitting diode chip for backlight unit, optimize the quality of light-emitting diode chip for backlight unit.
Above-mentioned explanation illustrate and describes the preferred embodiments of the present invention, as previously mentioned, be to be understood that the present invention is not limited to the form disclosed by this paper, should not regard the eliminating to other embodiments as, and can be used for other combinations various, amendment and environment, and can in invention contemplated scope described herein, changed by the technology of above-mentioned instruction or association area or knowledge.And the change that those skilled in the art carry out and change do not depart from the spirit and scope of the present invention, then all should in the protection range of claims of the present invention.
Claims (4)
1. an efficient LED chip, is characterized in that: comprise
One substrate;
One resilient coating, is arranged at described substrate top surface;
One involuntary doped layer, is arranged at described resilient coating upper surface;
One N-type conductive layer, is arranged at described involuntary doped layer upper surface;
One active area, is arranged at the left part upper surface of described N-type conductive layer;
One electronic barrier layer, is arranged at described active area upper surface;
One P-type conduction layer, is arranged at described electronic barrier layer upper surface;
One P type contact layer, is arranged at described P-type conduction layer upper surface;
One current barrier layer, is arranged at the left part upper surface of described P type contact layer;
One ITO conductive layer, is arranged at the right part upper surface of described P type contact layer, and covers described P type contact layer completely with described current barrier layer;
One P electrode, is arranged at described current barrier layer upper surface;
One N electrode, is arranged at the right part of described N-type conductive layer, and the height being deep into described N-type conductive layer mixes part; And
One electrode isolation layers, be arranged at described N electrode and described active area, electronic barrier layer, P-type conduction layer, between P type contact layer and the right lateral surface of ITO conductive layer.
2. a kind of efficient LED chip according to claim 1, is characterized in that: also comprise a chip protection layer, is arranged at the upper surface of described efficient LED chip except P electrode and N electrode and side.
3. a kind of efficient LED chip according to claim 1, is characterized in that: described current blocking layer material is non-conductive material layer.
4. a kind of efficient LED chip according to claim 3, is characterized in that: described non-conductive material layer comprises SiN, Ti
2o
3and Al
2o
3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510918552.5A CN105514240A (en) | 2015-12-10 | 2015-12-10 | High-efficiency light emitting diode chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510918552.5A CN105514240A (en) | 2015-12-10 | 2015-12-10 | High-efficiency light emitting diode chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105514240A true CN105514240A (en) | 2016-04-20 |
Family
ID=55722070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510918552.5A Pending CN105514240A (en) | 2015-12-10 | 2015-12-10 | High-efficiency light emitting diode chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105514240A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000124502A (en) * | 1998-10-15 | 2000-04-28 | Matsushita Electronics Industry Corp | Semiconductor light-emitting element and manufacture thereof |
| CN102437263A (en) * | 2011-12-16 | 2012-05-02 | 映瑞光电科技(上海)有限公司 | Light-emitting diode (LED) and manufacturing method thereof |
| CN202423369U (en) * | 2012-01-05 | 2012-09-05 | 湘能华磊光电股份有限公司 | Light-emitting diode chip |
| CN102931301A (en) * | 2011-06-30 | 2013-02-13 | 夏普株式会社 | Nitride semiconductor light-emitting device |
| CN104485405A (en) * | 2014-12-23 | 2015-04-01 | 圆融光电科技有限公司 | Led chip and manufacturing method thereof |
| CN205282496U (en) * | 2015-12-10 | 2016-06-01 | 厦门乾照光电股份有限公司 | High -efficient emitting diode chip |
-
2015
- 2015-12-10 CN CN201510918552.5A patent/CN105514240A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000124502A (en) * | 1998-10-15 | 2000-04-28 | Matsushita Electronics Industry Corp | Semiconductor light-emitting element and manufacture thereof |
| CN102931301A (en) * | 2011-06-30 | 2013-02-13 | 夏普株式会社 | Nitride semiconductor light-emitting device |
| CN102437263A (en) * | 2011-12-16 | 2012-05-02 | 映瑞光电科技(上海)有限公司 | Light-emitting diode (LED) and manufacturing method thereof |
| CN202423369U (en) * | 2012-01-05 | 2012-09-05 | 湘能华磊光电股份有限公司 | Light-emitting diode chip |
| CN104485405A (en) * | 2014-12-23 | 2015-04-01 | 圆融光电科技有限公司 | Led chip and manufacturing method thereof |
| CN205282496U (en) * | 2015-12-10 | 2016-06-01 | 厦门乾照光电股份有限公司 | High -efficient emitting diode chip |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160420 |