CN105511981A

CN105511981A - Method for rapidly detecting NAND Flash memory

Info

Publication number: CN105511981A
Application number: CN201510829274.6A
Authority: CN
Inventors: 王振
Original assignee: Shanghai Feixun Data Communication Technology Co Ltd
Current assignee: Shanghai Feixun Data Communication Technology Co Ltd
Priority date: 2015-11-24
Filing date: 2015-11-24
Publication date: 2016-04-20

Abstract

The invention provides a method for rapidly detecting NAND Flash memory. The method comprises following steps: wiping out one storage unit block of NAND Flash memory; writing in testing data into one storage unit page of the storage unit block; reading written-in testing data; determining the abnormality of data lines based on original written-in testing data and read testing data of the storage unit page; determining the NAND Flash memory as abnormal if the data lines are abnormal; and determining the NAND Flash memory as normal otherwise. The method for rapidly detecting NAND Flash memory helps to avoid the problem that memory storage space of whole NAND Flash memory is detected during a traditional test of NAND Flash memory so that testing time is effectively reduced and test efficiency is raised.

Description

A kind of method of quick detection NAND Flash internal memory

Technical field

The present invention relates to electronic technology field, particularly relate to a kind of method of quick detection NANDFlash internal memory.

Background technology

NANDFlash internal memory shows one of commercially main nonvolatile flash memory technology.First Inter company developed NORFlash technology in 1988, revolutionized the situation originally having EPROM and EEPROM to rule all the land.Within 1989, Toshiba has delivered NANDFlash internal storage structure, emphasizes the cost reducing every bit, has higher performance, and easily can be upgraded by interface as disk.The structure of NANDFlash internal memory can improve high cell density, can reach high storage density, can accomplish Gbit rank, and the speed of write and erasing is also very fast, also has the advantage on cost simultaneously.

When testing in the process of changing the line of production, detect if travel through whole NANDFlash memory storage space, then need to spend the plenty of time.In addition, when detecting, the write operation of NANDFlash memory devices can only sky or carry out in the unit wiped, so in most cases, first must perform erasing before carrying out write operation.The method that traditional NANDFlash internal memory detects is the whole space content of erasing NANDFlash internal memory, takes a large amount of time.Therefore, a kind of method that can detect NANDFlash internal memory is fast provided, becomes current problem demanding prompt solution.

Summary of the invention

In view of the above problems, the application describes a kind of method of quick detection NANDFlash internal memory, and described method comprises step:

A memory cell block of erasing NANDFlash internal memory;

Test data is write in a storage unit page of described memory cell block;

Read the described test data of write;

Judge that whether data line is normal according to the test data of original write and the test data of reading in described storage unit page;

If abnormal, judge NANDFlash memory abnormal; Otherwise, judge that NANDFlash internal memory is normal.

Preferably, described test data is write in base address 0 skew place of described storage unit page.

Preferably, when reading the described test data of write, the address space from the place of described base address is read successively.

Preferably, judge that the whether normal process of described data line comprises step according to the test data of write original in described memory cell block and the test data of reading:

The test data of the test data of original write and reading is carried out XOR, and whether judged result is 0;

If result is 0, judge that described data line is normal; Otherwise, judge that described data line is abnormal.

Preferably, when described data line is normal, judge address wire and corresponding control signal wire normal.

Preferably, the described test data of write is 0xaa and 0x55 alternately.

Technique scheme tool has the following advantages or beneficial effect: the method for the quick detection NANDFlash internal memory that the present invention proposes, when avoiding traditional test NANDFlash internal memory, travel through whole NANDFlash memory storage space to detect, effectively can reduce the test duration, improve testing efficiency.

Accompanying drawing explanation

With reference to appended accompanying drawing, to describe embodiments of the invention more fully.But, appended accompanying drawing only for illustration of and elaboration, do not form limitation of the scope of the invention.

Fig. 1 is the schematic flow sheet one of the method for a kind of quick detection NANDFlash internal memory of the present invention;

Fig. 2 is the schematic flow sheet two of the method for a kind of quick detection NANDFlash internal memory of the present invention.

Embodiment

Be described in detail below in conjunction with the method for the drawings and specific embodiments to a kind of quick detection NANDFlash internal memory of the present invention.

As shown in Figure 1, a kind of method of quick detection NANDFlash internal memory, comprises step:

A memory cell block of erasing NANDFlash internal memory, and test data is write in the storage unit page of this memory cell block;

Read back write described test data;

According to the test data of original write and the test data of reading back judge data line or address wire whether normal;

For NANDFlash internal memory, its storage space is made up of some memory cell blocks, and each memory cell block is made up of some storage unit pages again.In actual applications, memory cell block is minimum erase unit, but storage unit page is minimum writing unit.Example is saved as in the NANDFlash being K9F4G08U0D-SCB0 with a model of Samsung, the capacity of this NANDFlash internal memory is 4Gbit, a slice K9F4G08U0D-SCB0 is made up of 4096 memory cell blocks, a block comprises 64 storage unit pages, and each storage unit page comprises (2K+64) Byte.

When internally depositing into row and detecting, before the write operation of any NANDFlash internal memory, all first erase operation must be carried out.Due to the erase unit that memory cell block is minimum, therefore in the present embodiment, first wipe any one memory cell block of internal memory, and then write test data in certain storage unit page of this memory cell block.Finally, to read back this test data.When whether test data line or address wire be normal, need the test data contrasting original write and the test data of reading back.If both are identical, then prove that data line is normal, can illustrate that address wire and relevant control signal wire are also normal simultaneously.

Wherein, as shown in Figure 2, write described test data in base address 0 skew place of described storage unit page, and when reading the described test data of write, read the address space from the place of described base address successively.

Judge that the whether normal process of described data line comprises step according to the test data of write original in described memory cell block and the test data of reading:

Specifically, the structure of the test data of write can be as follows:

Test_Data＝{0xaa，0x55，0xaa，0x55，0xaa，0x55，0xaa，0x55}

Under normal circumstances, data line is abnormal causes primarily of two kinds of situations: data line short circuit or data line open circuit.In order to whether test data line has short circuit or open circuit, can to the base address 0 skew place write test data of test.Read the address space from the place of base address successively, then by the test data of write and the test data phase XOR of reading, if result is not 0, then illustrate that address wire/data line exists abnormal.If result is 0, then illustrate that the test data of reading is identical with the test data of write, then illustrate that data line is normal, can indirect proof address wire and relevant control signal wire also be normal simultaneously.

In the present embodiment, the method of the quick detection NANDFlash internal memory proposed, by a memory cell block of erasing NANDFlash internal memory, write the data of a storage unit page again, then the data of this storage unit page are read, and carry out XOR with raw data, judge that whether NANDFlash internal memory is abnormal.It is worthy of note, the test data of write can be 0xaa and 0x55 alternately.By the method, when avoiding traditional test NANDFlash internal memory, travel through whole NANDFlash memory storage space and detect, effectively can reduce the test duration, improve testing efficiency.

For a person skilled in the art, after reading above-mentioned explanation, various changes and modifications undoubtedly will be apparent.Therefore, appending claims should regard the whole change and correction of containing true intention of the present invention and scope as.In Claims scope, the scope of any and all equivalences and content, all should think and still belong to the intent and scope of the invention.

Claims

1. detect a method for NANDFlash internal memory fast, it is characterized in that, described method comprises step:

A memory cell block of erasing NANDFlash internal memory;

Test data is write in a storage unit page of described memory cell block;

Read the described test data of write;

2. the method for quick detection NANDFlash internal memory according to claim 1, is characterized in that, write described test data in base address 0 skew place of described storage unit page.

3. the method for quick detection NANDFlash internal memory according to claim 2, is characterized in that, when reading the described test data of write, reads the address space from the place of described base address successively.

4. the method for the quick detection NANDFlash internal memory according to Claims 2 or 3, is characterized in that, judges that the whether normal process of described data line comprises step according to the test data of write original in described memory cell block and the test data of reading:

5. the method for quick detection NANDFlash internal memory according to claim 1, is characterized in that, when described data line is normal, judge address wire and corresponding control signal wire normal.

6. the method for quick detection NANDFlash internal memory according to claim 5, is characterized in that, the described test data of write is 0xaa and 0x55 alternately.