CN105499069A - Film forming apparatus and film forming method - Google Patents

Film forming apparatus and film forming method Download PDF

Info

Publication number
CN105499069A
CN105499069A CN201510450812.0A CN201510450812A CN105499069A CN 105499069 A CN105499069 A CN 105499069A CN 201510450812 A CN201510450812 A CN 201510450812A CN 105499069 A CN105499069 A CN 105499069A
Authority
CN
China
Prior art keywords
film
thickness
substrate
nozzle head
control device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201510450812.0A
Other languages
Chinese (zh)
Other versions
CN105499069B (en
Inventor
冈本裕司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ltd
Original Assignee
Sumitomo Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Publication of CN105499069A publication Critical patent/CN105499069A/en
Application granted granted Critical
Publication of CN105499069B publication Critical patent/CN105499069B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Coating Apparatus (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Plasma Technology (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

The invention provides a film forming apparatus. Satellite droplets can be removed with no need of analyzing images on the surface of the substrate after the film is formed. A nozzle head maintaining opposite to a substrate of an objective table sprays droplet film materials towards the substrate. A moving mechanism one of the substrate and the nozzle head held on the objective table moves relative to the other one. A storing device stores image data and film thickness correction information of the film to be formed. A control device controls the nozzle head and the moving mechanism according to the image data, and therefore a film is formed on the substrate. Data is input to the control device through an input device. If a film thickness instruction value is input from the input device, the control device corrects the film thickness instruction value according to the film thickness correction information, and therefore a film thickness target value which is larger than the film thickness instruction value is calculated, and the control device controls the nozzle head and the moving mechanism to form a film the thickness of which is equal to the film thickness target value.

Description

Membrane formation device and film formation method
The application advocates the priority of No. 2014-208562nd, the Japanese patent application based on application on October 10th, 2014.The full content of this Japanese publication is by reference to being applied in this description.
Technical field
The present invention relates to a kind of from nozzle head spue through droplet treatment membrane material thus form membrane formation device and the film formation method of film at substrate.
Background technology
There will be a known and spue the drop of solder resist to form the method (patent document 1) of solder resist film at printed base plate from nozzle head.The droplet of the drop separation spued from the nozzle bore of nozzle head sometimes land in the position of departing from objective.If droplet land are in the inner side of the opening portion of solder resist film, then in opening portion, form the small region (hereinafter referred to as " satellite droplet ") of solder resist.
The known technology (patent document 2) by removing satellite droplet to satellite droplet illuminating laser beam.Thereby, it is possible to suppress the decline of the yield rate in solder resist film formation process.
Patent document 1: Japanese Unexamined Patent Publication 7-263845 publication
Patent document 2: Japanese Unexamined Patent Publication 2012-96286 publication
Irradiate by laser the method removing satellite droplet in order to perform, need that there is the image analysis apparatus that shooting is formed with the imageing sensor on the surface of the substrate of solder resist film and the position according to captured image detection satellite droplet.
Summary of the invention
The object of the present invention is to provide a kind of without the need to carry out film formed after the graphical analysis of substrate surface can remove the membrane formation device of satellite droplet.Another object of the present invention is to provide a kind of without the need to carry out film formed after the graphical analysis of substrate surface can remove the film formation method of satellite droplet.
According to a kind of viewpoint of the present invention, provide a kind of membrane formation device, it has:
Objective table, for keeping substrate;
Nozzle head, opposed with the described substrate being held in described objective table, and spue through the membrane material of droplet treatment towards described substrate;
Travel mechanism, of making to be held in the described substrate of described objective table and described nozzle head moves relative to another;
Storage device, stores view data and the thickness correction information of film to be formed;
Control device, controls described nozzle head and described travel mechanism according to described view data, forms the film with the pattern that described view data defines thus at described substrate; And
Input unit, for inputting data to described control device,
If have thickness command value from described input unit input, then described control device thickness command value according to the correction of described thickness correction information, calculates the film thickness targets value thicker than described thickness command value thus,
And described control device controls described nozzle head and described travel mechanism, to form the film being equivalent to described film thickness targets value thickness.
According to another kind of viewpoint of the present invention, provide a kind of film formation method, it has following operation:
Spue from nozzle head towards substrate according to view data the drop of membrane material, forms the film with the pattern that described view data defines thus; And
Plasma treatment is carried out to the whole region of the described substrate being formed with described film, removes the described membrane material being attached to unnecessary region thus.
The membrane material (satellite droplet) being attached to unnecessary region can be removed by plasma treatment.Owing to carrying out plasma treatment to the whole region of substrate, therefore without the need to carrying out the graphical analysis etc. of the position for determining satellite droplet.
Accompanying drawing explanation
Fig. 1 is the synoptic diagram of the membrane formation device of embodiment.
Fig. 2 is the synoptic diagram of the apparatus for coating used in the membrane formation device of embodiment and the block diagram of control device.
Fig. 3 is the flow chart of the film formation method of embodiment.
Fig. 4 A to Fig. 4 C is the sectional view of substrate after interstage of film formation method and film are formed and film.
Fig. 5 A to Fig. 5 C is the schematic diagram of the configuration representing the multiple devices used in the membrane formation device of another embodiment.
In figure: 20-moves into device, 21-conveying roller, 22-block, 30, 30A-apparatus for coating, 31-platform, 32-travel mechanism, 33-objective table, 34-lifter pin, 35-nozzle unit, 36-nozzle head, 37-solidifies with light source temporarily, 38-membrane material feedway, 40, the formal solidification equipment of 40A-, 41-conveying roller, 42-formally solidifies with light source, 50-conveying device, 51-guiding piece, 52-lift, 60-control device, 61-film forming handling part, 62-thickness correction handling part, 63-storage device, 65-input unit, 66-output device, 70-substrate, 71-film, 72-satellite droplet, 73-opening portion, 75-plasma, 80, 80A-plasma processing apparatus, 80B-double-sided plasma body treating apparatus, 83-inversion set, 85-annealing device, Tr-thickness command value, Tt-film thickness targets value.
Detailed description of the invention
The synoptic diagram of the membrane formation device of embodiment shown in Fig. 1.The membrane formation device of embodiment comprises: move into device 20, apparatus for coating 30, formal solidification equipment 40, conveying device 50 and control device 60.Define using horizontal plane as xy face, using the xyz orthogonal coordinates as the forward of z-axis above vertical.Move into device 20, apparatus for coating 30, formally solidification equipment 40 configure towards the forward of x-axis successively.Control device 60 controls to move into device 20, apparatus for coating 30, formal solidification equipment 40 and conveying device 50.Conveying device 50 takes out of substrate 70 as handling object from moving into device 20, and is moved in apparatus for coating 30.Further, take out of substrate 70 from apparatus for coating 30, and be moved in formal solidification equipment 40.
Move into device 20 and comprise conveying roller 21 and block 22.Conveying roller 21 carries the substrate 70 as handling object until contact with block 22.By the contact of substrate 70 with block 22, substrate 70 is roughly located in the conveying direction.
Conveying device 50 comprises guiding piece 51 and lift 52.Directed 51, lift 52 guide and move to x direction.Be lifting machine 52 by the substrate 70 of roughly locating in device 20 and keep and be delivered to apparatus for coating 30 moving into.The substrate 70 being coated with membrane material in apparatus for coating 30 is lifting machine 52 and keeps and be delivered to formal solidification equipment 40.
Apparatus for coating 30 comprises platform 31, travel mechanism 32 and objective table 33.Objective table 33 is supported on platform 31 via travel mechanism 32.Travel mechanism 32 is controlled the control of device 60 and to x direction and y direction moving stage 33, and changes the posture of the direction of rotation of objective table 33 for pivot with the straight line parallel with z-axis.
Objective table 33 is assembled with multiple lifter pin 34.Lifter pin 34 keeps substrate 70 at its upper end, and substrate 70 is elevated relative to objective table 33.Under the state making substrate 70 increase, between substrate 70 and objective table 33, be formed with space.By the supporting arm of lift 52 is inserted this space, lift 52 can receive substrate 70 from objective table 33.On the contrary, from lift 52, substrate 70 can be handed over to objective table 33.By making lifter pin 34 decline, substrate 70 can be made to be close to objective table 33.Objective table 33 is such as by vacuum chuck fixing base 70.
The surface of apparatus for coating 30 to the substrate 70 being held in objective table 33 is coated with the membrane material be made up of the resin of photo-curable.
Formal solidification equipment 40 comprises conveying roller 41 and formal solidification light source 42.Substrate 70 in apparatus for coating 30 after process is transported to formal solidification equipment 40 by conveying device 50, and is equipped on conveying roller 41.Conveying roller 41 is to the positive direction conveying substrate 70 of x-axis.Formal solidification light source 42 is configured with above the transport path of substrate 70.Formal solidification light source 42 irradiates to the substrate 70 being transferred roller 41 conveying the light comprising the wavelength components that membrane material is solidified.
The synoptic diagram of apparatus for coating 30 shown in Fig. 2 and the block diagram of control device 60.As shown in Figure 1, apparatus for coating 30 comprises platform 31, travel mechanism 32 and objective table 33.In addition, apparatus for coating 30 comprises nozzle unit 35 and membrane material feedway 38.
Control device 60 controls travel mechanism 32, thus can to x direction and these 2 direction moving stages 33 of y direction.Substrate 70 is held in objective table 33.Nozzle unit 35 is supported with above substrate 70.Nozzle unit 35 comprises the nozzle head 36 opposed with objective table 33 and interim solidification light source 37.Membrane material feedway 38 supplies liquid photo-curable membrane material to nozzle head 36, and reclaims unnecessary membrane material from nozzle head 36.
Nozzle head 36 is provided with multiple nozzle bore, spues through the membrane material of droplet treatment from nozzle bore towards substrate 70.Spue from nozzle bore and the membrane material that is attached to substrate 70 is solidified by the light sent from interim solidification light source 37 temporarily.Wherein, so-called " solidifying " represents that the surface being cured to membrane material is through being solidified to form diaphragm temporarily, but inside still keeps liquid state.And so-called " formally solidifying " expression makes the inside of membrane material also solidify.The formal solidification process of membrane material is carried out by formal solidification equipment 40 (Fig. 1).
The mechanism making nozzle head 36 relative to objective table 33 movement can be adopted as travel mechanism 32.That is, a mechanism relative to another movement in the substrate 70 and nozzle head 36 making to be held in objective table 33 can be adopted as travel mechanism 32.
Control device 60 comprises film forming handling part 61, thickness correction handling part 62 and storage device 63.The function of film forming handling part 61 and thickness correction handling part 62 such as realizes by making CPU (CPU) perform the computer program being stored in storage device 63.Storage device 63 comprises RAM and ROM.
Data needed for the formation of film are input in control device 60 by input unit 65.The thickness command value etc. of the view data comprising the flat shape (pattern) defining film to be formed in the data needed for the formation of film and the thickness specifying film to be formed.This view data, thickness command value etc. are stored in storage device 63.Input unit 65 is made up of keyboard, Trackpad, communicator, mobile storage means terminal etc.The various results of control device 60 output to output device 66.Output device 66 is made up of display, printer etc.
While y direction moving substrate 70, spue through the membrane material of droplet treatment according to view data from nozzle head 36, the film with desired pattern can be formed on the surface of substrate 70 thus.Interim solidification light source 37 is lighted when spuing membrane material.Therefore, the membrane material land being attached to substrate 70 are solidified immediately after substrate 70 temporarily.The distribution density of landing point, the recoat number of times etc. of membrane material of the drop the volume of the drop spued from nozzle head 36 by adjustment, the surface of substrate 70, can change the thickness of film.
Then, with reference to figure 3 to Fig. 4 C, the film formation method of embodiment is described.Fig. 3 represents the flow chart of the film formation method of embodiment, Fig. 4 A to Fig. 4 C represent interstage of film formation method and film formed after substrate and the sectional view of film.
In step S1 (Fig. 3), operating personnel input the view data of the pattern of definition film to be formed and the thickness command value of regulation thickness to control device 60 by input unit 65 (Fig. 2).The view data inputted and thickness command value are stored in storage device 63 (Fig. 2).
In step s 2, thickness correction handling part 62 (Fig. 2), according to the thickness correction information correction thickness command value being stored in storage device 63, determines film thickness targets value thus.Film thickness targets value is slightly thicker than thickness command value.As an example, thickness correction information is such as by representing from thickness command value to the information structure of the increment of film thickness targets value.Thickness command value adding, increment represented by thickness correction information is to calculate film thickness targets value.
In step s3, film forming handling part 61 (Fig. 2) Control Nozzle head 36 and travel mechanism 32, be moved to apparatus for coating 30 (Fig. 1) to make substrate 70 and form the film of the thickness specified by film thickness targets value determined in step s 2.Such as, while move the substrate 70 being held in objective table 33 (Fig. 2) to y direction, according to definition film pattern view data and spue through the membrane material of droplet treatment from nozzle head 36.Afterwards, from apparatus for coating 30 (Fig. 1), the substrate 70 being formed with film is moved into formal solidification equipment 40, and film is formally solidified.
The partial sectional view of the substrate 70 after film shown in Fig. 4 A is formed.Film 71 is formed on the surface of substrate 70.The Thickness Ratio thickness command value Tr of film 71 is thick, and no better than film thickness targets value Tt.Sometimes on the opening portion 73 of film 71, be attached with the droplet of the drop separation spued from nozzle head 36, form satellite droplet 72 thus.The thickness of satellite droplet 72 is very thin compared with the thickness of film 71 to be formed, mostly is 1 μm ~ about 3 μm most.
In step S4 (Fig. 3), plasma treatment is carried out to the whole surface of substrate 70.Such as, as shown in Figure 4 B, substrate 70 is moved to plasma processing apparatus, and the whole surface of substrate 70 is exposed to plasma 75.Using as plasma 75 can the plasma of etching-film 71.The plasma of the reduction treatment carrying out film 71 such as can be used as plasma 75.Example as the plasma carrying out reduction treatment can enumerate the plasma comprising hydrogen.
The sectional view of the substrate after plasma treatment shown in Fig. 4 C.By plasma treatment, the membrane material and the satellite droplet 72 (Fig. 4 B) that are attached to the unnecessary region of substrate 70 are completely removed.Now, the skin section of film 71 is also removed, and therefore film 71 is thinning.The thickness correction information used in the correction process of the step S2 difference be predefined as thickness command value Tr and film thickness targets value Tt is substantially equal to the etched thickness of film 71.Therefore, the thickness of the film 71 after plasma treatment is no better than thickness command value Tr.
In step S5 (Fig. 3), carry out the heat treatment of film 71 (Fig. 4 C).By this heat treatment, film 71 is solidified further.
In the above-described embodiments, satellite droplet 72 (Fig. 4 A) can be removed by the plasma treatment in step S4.Owing to carrying out plasma treatment to the whole surface of substrate 70, therefore without the need to carrying out the graphical analysis for the presence or absence or its position determining satellite droplet 72.The thickness of satellite droplet 72 mostly is 1 μm ~ 3 μm most, does not therefore have satellite droplet 72 and remains, therefore preferred by thickness correction information definition be from thickness command value to the increment of film thickness targets value within the scope of 1 μm ~ 3 μm.
In addition, in step s 2, estimate the thickness of the skin section removed by plasma treatment and set film thickness targets value Tt, therefore, it is possible to make the thickness of the film after plasma treatment 71 roughly consistent with thickness command value Tr.
Then, with reference to figure 5A to Fig. 5 C, another embodiment is described.Below, the point different from the embodiment shown in Fig. 1 to Fig. 4 C is described, and omits mutually isostructural explanation.
In the membrane formation device of the embodiment shown in Fig. 5 A, between apparatus for coating 30 and formal solidification equipment 40, be configured with plasma processing apparatus 80.The substrate 70 (Fig. 4 A) defining film 71 (Fig. 4 A) in apparatus for coating 30 is transported to plasma processing apparatus 80 by conveying device 50.In this stage, the film 71 being formed at substrate is in interim solid state.
By carrying out plasma treatment in plasma processing apparatus 80, remove satellite droplet 72 (Fig. 4 B).Substrate 70 (Fig. 4 C) after plasma treatment is transported to formal solidification equipment 40 by conveying device 50.The formal solidification process of film 71 (Fig. 4 C) is carried out in formal solidification equipment 40.
Embodiment is as shown in Figure 5A such, carries out plasma treatment under the state that can be in interim solidification at film 71.Now, need that there is the thickness that can not be removed degree because of plasma treatment completely by the diaphragm solidify to form in the surface of film 71 temporarily.
In the membrane formation device of the embodiment shown in Fig. 5 B, the back segment of the formal solidification equipment 40 of the membrane formation device shown in Fig. 5 A is also configured with inversion set 83, apparatus for coating 30A, plasma processing apparatus 80A, formal solidification equipment 40A and annealing device 85.The substrate 70 (Fig. 4 C) terminating formal solidification process at formal solidification equipment 40 is moved in inversion set 83.Inversion set 83 makes substrate about 70 reverse.Thus, be formed film 71 (Fig. 4 C) facing to below, be not formed film facing to top.
The substrate 70 reversed up and down, by the process of apparatus for coating 30A, plasma processing apparatus 80A and formal solidification equipment 40A, also forms film overleaf.Afterwards, heat-treat being formed at two-sided film at annealing device 85.
In embodiment shown in Fig. 5 B, can at the two-sided formation film of substrate 70.In embodiment shown in Fig. 5 B, also before carrying out plasma treatment by plasma processing apparatus 80,80A, formally can solidify process by formal solidification equipment 40,40A.
In the membrane formation device of the embodiment shown in Fig. 5 C, eliminate plasma processing apparatus 80, the 80A shown in Fig. 5 B, replace, between formal solidification equipment 40A and annealing device 85, be configured with double-sided plasma body treating apparatus 80B.In this embodiment, by double-sided plasma body treating apparatus 80B, plasma treatment is carried out to the two-sided of substrate 70 simultaneously.Therefore, compared with the membrane formation device of the embodiment of Fig. 5 B, the processing time formed for film can be shortened.
Describe the present invention according to embodiment above, but the present invention is not limited to this.Such as, various change, improvement, combination etc. can be carried out, and this point is understandable to those skilled in the art.

Claims (8)

1. a membrane formation device, it has:
Objective table, for keeping substrate;
Nozzle head, opposed with the described substrate being held in described objective table, and spue through the membrane material of droplet treatment towards described substrate;
Travel mechanism, of making to be held in the described substrate of described objective table and described nozzle head moves relative to another;
Storage device, stores view data and the thickness correction information of film to be formed;
Control device, controls described nozzle head and described travel mechanism according to described view data, forms the film with the pattern that described view data defines thus at described substrate; And
Input unit, for inputting data to described control device,
If have thickness command value from described input unit input, then described control device thickness command value according to the correction of described thickness correction information, calculates the film thickness targets value thicker than described thickness command value thus,
And described control device controls described nozzle head and described travel mechanism, to form the film being equivalent to described film thickness targets value thickness.
2. membrane formation device according to claim 1, it also has:
Plasma processing apparatus, implements plasma treatment to described substrate, thus removes the skin section of the film be formed on described substrate; And
Conveying device, the described substrate after being formed by the film being held in described objective table is moved in described plasma processing apparatus,
Described control device controls described conveying device, thus the described substrate after being formed by film is moved in described plasma processing apparatus,
Described thickness correction information is defined as setting from described thickness command value to the increment of described film thickness targets value according to the thickness that is removed of the skin section of film described in described plasma processing apparatus.
3. membrane formation device according to claim 2, wherein,
Plasma treatment is implemented on the whole surface of described plasma processing apparatus to moved into described substrate.
4. the membrane formation device according to Claims 2 or 3, wherein,
Described thickness correction information is defined as from described thickness command value to the increment of described film thickness targets value within the scope of 1 μm ~ 3 μm.
5. the membrane formation device according to any one of claim 2 to 4, wherein,
The reduction treatment utilizing plasma is carried out in described plasma processing apparatus.
6. a film formation method, it has following operation:
Spue from nozzle head towards substrate according to view data the drop of membrane material, forms the film with the pattern that described view data defines thus; And
Plasma treatment is carried out to the whole region of the described substrate being formed with described film, removes the described membrane material being attached to unnecessary region thus.
7. film formation method according to claim 6, wherein,
In the operation removing described membrane material, the skin section of described film is also together removed.
8. film formation method according to claim 7, wherein,
In the operation removing described membrane material, that estimates the skin section of described film is removed thickness, and will be set as thicker than the thickness of described film to be formed at the thickness forming the described film formed in the operation of described film.
CN201510450812.0A 2014-10-10 2015-07-28 Membrane formation device and film forming method Expired - Fee Related CN105499069B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-208562 2014-10-10
JP2014208562 2014-10-10

Publications (2)

Publication Number Publication Date
CN105499069A true CN105499069A (en) 2016-04-20
CN105499069B CN105499069B (en) 2019-03-08

Family

ID=55707598

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510450812.0A Expired - Fee Related CN105499069B (en) 2014-10-10 2015-07-28 Membrane formation device and film forming method

Country Status (4)

Country Link
JP (1) JP6632300B2 (en)
KR (1) KR101753471B1 (en)
CN (1) CN105499069B (en)
TW (1) TWI575002B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109475895A (en) * 2016-08-10 2019-03-15 住友重机械工业株式会社 Film forming method and membrane formation device
CN109927413A (en) * 2017-12-15 2019-06-25 住友重机械工业株式会社 Membrane formation device and film forming method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7071231B2 (en) * 2018-06-28 2022-05-18 キヤノン株式会社 Flattening device, flattening method, article manufacturing method, and method for creating droplet placement pattern data

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1692478A (en) * 2002-07-30 2005-11-02 东京毅力科创株式会社 Method for forming insulating layer
KR20060070216A (en) * 2004-12-20 2006-06-23 삼성전기주식회사 Method for fablicating ball grid array board having ballpad image for enhancing reliability
KR20060099911A (en) * 2005-03-15 2006-09-20 (주) 플라즈닉스 Method for surface treatment of tape-type semiconductor device using plasma
JP4121658B2 (en) * 1999-02-22 2008-07-23 大日本印刷株式会社 Processing method of organic insulating resin layer
CN101399188A (en) * 2007-09-28 2009-04-01 东京毅力科创株式会社 Manufacturing method, manufacturing apparatus, control program and program recording medium of semicontructor device
CN102137550A (en) * 2009-12-24 2011-07-27 精工爱普生株式会社 Method for producing build-up substrate
US20120019589A1 (en) * 2009-04-01 2012-01-26 Omer Gila Hard imaging devices and hard imaging method
JP2012068563A (en) * 2010-09-27 2012-04-05 Fujifilm Corp Pattern formation method, substrate manufacturing method, and mold manufacturing method
CN102671835A (en) * 2011-03-16 2012-09-19 东京毅力科创株式会社 Coating film forming method and coating film forming device
CN102909954A (en) * 2011-08-05 2013-02-06 住友重机械工业株式会社 Thin film pattern forming apparatus, thin film pattern forming method and adjustment method for thin film pattern forming apparatus
CN103718661A (en) * 2011-07-27 2014-04-09 住友重机械工业株式会社 Device and method for producing substrate
KR101436755B1 (en) * 2012-11-01 2014-09-01 스미도모쥬기가이고교 가부시키가이샤 Substrate manufacturing method and substrate manufacturing apparatus
JP2014165252A (en) * 2013-02-22 2014-09-08 Tokyo Electron Ltd Film formation method, program, computer storage medium, and film formation system

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6858542B2 (en) * 2003-01-17 2005-02-22 Freescale Semiconductor, Inc. Semiconductor fabrication method for making small features
JP4815765B2 (en) * 2004-07-29 2011-11-16 ソニー株式会社 Method for manufacturing organic semiconductor device
JP2006202961A (en) * 2005-01-20 2006-08-03 Nec Lcd Technologies Ltd Processing method using printing pattern and printing pattern forming apparatus
JP5377940B2 (en) * 2007-12-03 2013-12-25 株式会社半導体エネルギー研究所 Semiconductor device
TW201103379A (en) * 2009-07-13 2011-01-16 Sumitomo Heavy Industries plasma processing method and processing device
JP2012096286A (en) * 2010-10-07 2012-05-24 Sumitomo Heavy Ind Ltd Laser irradiation apparatus, laser irradiation method, and insulating film forming apparatus
JP5714357B2 (en) * 2011-02-28 2015-05-07 三菱商事株式会社 RESIST COMPOSITION CONTAINING FULLERENE DERIVATIVE CONNECTED WITH PHOTO ACID GENERATOR AND RESIST PATTERN FORMING METHOD USING THE SAME
TW201307470A (en) * 2011-05-27 2013-02-16 Taiyo Ink Mfg Co Ltd Thermocuring resin composition, dry film and printed wiring board
CN103688603B (en) * 2011-07-15 2017-05-03 住友重机械工业株式会社 Thin film forming method and thin film forming apparatus

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4121658B2 (en) * 1999-02-22 2008-07-23 大日本印刷株式会社 Processing method of organic insulating resin layer
CN1692478A (en) * 2002-07-30 2005-11-02 东京毅力科创株式会社 Method for forming insulating layer
KR20060070216A (en) * 2004-12-20 2006-06-23 삼성전기주식회사 Method for fablicating ball grid array board having ballpad image for enhancing reliability
KR20060099911A (en) * 2005-03-15 2006-09-20 (주) 플라즈닉스 Method for surface treatment of tape-type semiconductor device using plasma
CN101399188A (en) * 2007-09-28 2009-04-01 东京毅力科创株式会社 Manufacturing method, manufacturing apparatus, control program and program recording medium of semicontructor device
US20120019589A1 (en) * 2009-04-01 2012-01-26 Omer Gila Hard imaging devices and hard imaging method
CN102378690A (en) * 2009-04-01 2012-03-14 惠普开发有限公司 Hard imaging devices and hard imaging methods
CN102137550A (en) * 2009-12-24 2011-07-27 精工爱普生株式会社 Method for producing build-up substrate
JP2012068563A (en) * 2010-09-27 2012-04-05 Fujifilm Corp Pattern formation method, substrate manufacturing method, and mold manufacturing method
CN103124929A (en) * 2010-09-27 2013-05-29 富士胶片株式会社 Pattern forming method, substrate manufacturing method, and mold manufacturing method
CN102671835A (en) * 2011-03-16 2012-09-19 东京毅力科创株式会社 Coating film forming method and coating film forming device
CN103718661A (en) * 2011-07-27 2014-04-09 住友重机械工业株式会社 Device and method for producing substrate
CN102909954A (en) * 2011-08-05 2013-02-06 住友重机械工业株式会社 Thin film pattern forming apparatus, thin film pattern forming method and adjustment method for thin film pattern forming apparatus
KR101436755B1 (en) * 2012-11-01 2014-09-01 스미도모쥬기가이고교 가부시키가이샤 Substrate manufacturing method and substrate manufacturing apparatus
JP2014165252A (en) * 2013-02-22 2014-09-08 Tokyo Electron Ltd Film formation method, program, computer storage medium, and film formation system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109475895A (en) * 2016-08-10 2019-03-15 住友重机械工业株式会社 Film forming method and membrane formation device
CN109927413A (en) * 2017-12-15 2019-06-25 住友重机械工业株式会社 Membrane formation device and film forming method

Also Published As

Publication number Publication date
KR101753471B1 (en) 2017-07-03
KR20160042756A (en) 2016-04-20
CN105499069B (en) 2019-03-08
TWI575002B (en) 2017-03-21
TW201627361A (en) 2016-08-01
JP2016078019A (en) 2016-05-16
JP6632300B2 (en) 2020-01-22

Similar Documents

Publication Publication Date Title
TWI752163B (en) Method and apparatus for manufacturing a layer of an electronic product
CN105499069A (en) Film forming apparatus and film forming method
JP2012103269A5 (en) Loading method, exposure method, exposure apparatus, and device manufacturing method
US20190291415A1 (en) Printing apparatus
WO2012133955A2 (en) Simulation method, simulation program, recording medium having the simulation program stored therein, method for producing droplet arrangement patterns utilizing the simulation method, nanoimprinting method, method for producing patterned substrates, and ink jet apparatus
JP2018126788A (en) Laser ablation device
CN104236407B (en) The method of dressing plate scale
JP2022009863A (en) Screen printer and screen printing method
KR20100084985A (en) Laser patterning method and laser patterning equipment
JP2007189073A (en) Exposure system
JP2013251475A (en) Calibration value obtaining method in electronic component mounting line and electronic component mounting method on electronic component mounting line
IT201800010598A1 (en) DEVICE FOR THE IN SITU REMOVAL OF DEFECTS DURING ADDITIVE PRINTING OF METALLIC PARTS
US20190283256A1 (en) Robot system and control method of robot
CN104742632B (en) A kind of glass surface pattern laser processing unit (plant) and processing method
US20100104747A1 (en) Drop Deposition Control
WO2017006412A1 (en) Shaping device and shaping method
JP2006350315A (en) Exposure apparatus
EP3391974A1 (en) Fluid discharging device and fluid discharging method
CN108025328A (en) Coating method
KR101814329B1 (en) Exposure apparatus for LDI
TW200732160A (en) Method for forming mark and liquid ejection apparatus
JP2008093662A (en) Coating apparatus and coating method
US10153130B2 (en) Charged particle beam drawing apparatus and charged particle beam drawing method
CN115992183B (en) Sperm automatic braking and sucking method and system
JP2018037501A (en) Component mounting system and data feedback method in component mounting system

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190308