CN105489728B - Light emitting diode with electrode pad - Google Patents
Light emitting diode with electrode pad Download PDFInfo
- Publication number
- CN105489728B CN105489728B CN201510823096.6A CN201510823096A CN105489728B CN 105489728 B CN105489728 B CN 105489728B CN 201510823096 A CN201510823096 A CN 201510823096A CN 105489728 B CN105489728 B CN 105489728B
- Authority
- CN
- China
- Prior art keywords
- light emitting
- type semiconductor
- semiconductor layer
- conductive type
- electrode pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 107
- 239000004744 fabric Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 128
- 239000000758 substrate Substances 0.000 description 10
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The embodiment of the present invention is related to the light emitting diode with electrode pad.The light emitting diode includes：First conductive type semiconductor layer；Second conductive type semiconductor layer is arranged on the first conductive type semiconductor layer；Active layer is arranged between the first conductive type semiconductor layer and second conductive type semiconductor layer；Electrode layer covers second conductive type semiconductor layer；Second electrode pad, including the first area being arranged on the first conductive type semiconductor layer and the second area being arranged on electrode layer；And insulating layer, it is arranged between the first conductive type semiconductor layer and second electrode pad, the insulating layer makes second electrode pad and the first conductive type semiconductor layer insulate.
Description
The application be the applying date be on November 16th, 2010, application No. is 201010551678.0 applications for a patent for invention
The divisional application of " light emitting diode with electrode pad ".
Technical field
An exemplary embodiment of the present invention relates to a kind of light emitting diodes, more particularly, are related to a kind of with electrode weldering
The light emitting diode of disk.
Background technique
Gallium nitride (GaN) based light-emitting diode (LED) has been widely used for including full color LED display, LED traffic letter
Number, in the application of White LED etc..
GaN class light emitting diode is usually formed and the substrate growing epitaxial layers in such as sapphire substrates, and is wrapped
Include n type semiconductor layer, p type semiconductor layer and the active layer being arranged between n type semiconductor layer and p type semiconductor layer.In addition,
N electrode pad is formed on n type semiconductor layer, and P electrode pad is formed on p type semiconductor layer.Light emitting diode passes through these
Electrode pad is electrically connected to external power supply, and is operated by external power supply.Here, electric current passes through semiconductor layer from P electrode
Pad flows to N electrode pad.
It is high generally, due to the resistance coefficient of p type semiconductor layer, so electric current is not evenly distributed in p type semiconductor layer
In, but the formation for concentrating on p type semiconductor layer has on the part of P electrode pad, current convergence is on the edge of semiconductor layer
Cocurrent crosses the edge of semiconductor layer.Current crowding causes light-emitting area to reduce, so that the luminous efficiency in source be made to deteriorate.In order to solve
Such problems forms the low transparent electrode layer of resistance coefficient on p type semiconductor layer to improve current spread.In the structure
In, when providing electric current from P electrode pad, electric current is dispersed before entering p type semiconductor layer by transparent electrode layer, thus
Increase the light-emitting area of LED.
However, since transparent electrode layer is intended to absorb light, so the thickness of transparent electrode layer is restricted, to provide
Restricted current spread.In particular, for there is about 1mm for height output2Or the large LED of bigger area,
Limit the current spread by transparent electrode layer.
For the ease of the current spread in light emitting diode, the ennation extended from electrode pad has been used.For example, the 6th,
The LED of 650, No. 018 U.S. Patent Publications include it is multiple from electrode contact point 117,127 (that is, electrode pads) along phase negative side
To extension ennation to improve current spread.
Although using such ennation current spread can be improved on the wide region of light emitting diode, shining
The formation of diode, which has, still occurs current crowding at the part of electrode pad.
In addition, a possibility that existing defects, increases in light emitting diode with the increase of light-emitting diodes pipe size.Such as wear
The defect of saturating dislocation (threading dislocation), pin hole (pin-hole) etc. provides the channel that electric current flows fast through,
To upset the current spread in light emitting diode.
Summary of the invention
The exemplary embodiment of the present invention provides a kind of light emitting diodes for preventing electric current crowded near electrode pad.
Another exemplary embodiment of the invention provides what a kind of permission electric current over a wide region was uniformly spread
Light emitting diode.
Supplementary features of the invention will be set forth in the description that follows, and partially will be apparent or by description by this hair
Bright practice can obtain.
The exemplary embodiment of the present invention discloses a kind of light emitting diodes.The light emitting diode includes：Substrate；First leads
Electric type semiconductor layer, in substrate；Second conductive type semiconductor layer, on the first conductive type semiconductor layer；Active layer,
It is arranged between the first conductive type semiconductor layer and second conductive type semiconductor layer；First electrode pad is electrically connected to
One conductive type semiconductor layer；Second electrode pad, on the first conductive type semiconductor layer；Insulating layer, setting are led first
Between electric type semiconductor layer and second electrode pad, and make second electrode pad and the first conductive type semiconductor layer electricity absolutely
Edge.Ennation can be electrically connected to second electrode weldering while being electrically connected to second conductive type semiconductor layer at least one
Disk.
First conductive type semiconductor layer can be n-type nitride semiconductor layer, and second conductive type semiconductor layer can be with
For p-type nitride semiconductor layer.Therefore, electric current can be prevented crowded in p-type nitride semiconductor layer around p-electrode pad
On.In addition, transparent electrode layer can be located on p-type nitride semiconductor layer, upper ennation can be located on transparent electrode layer.
First conductive type semiconductor layer may include that at least one passes through mesa etch second conductive type semiconductor layer
The region of exposure with active layer, second electrode pad can be located on the exposed region of the first conductive type semiconductor layer.
Upper ennation can be connected to second electrode pad, second conductive type semiconductor layer and active layer by coupling part
The side surface by mesa etch can pass through insulating layer and coupling part and insulate.
Insulating layer extends to the upper surface of second conductive type semiconductor layer, so that the edge of insulating layer is led with second
Electric type semiconductor layer is stacked.
In some exemplary embodiments, at least part of second electrode pad can be located at the second conduction type and partly lead
On body layer.Second electrode pad and second conductive type semiconductor layer can be separated from each other by insulating layer.
Second conductive type semiconductor layer and active layer can be separated to limit at least two light emitting regions.It is connected to
The upper ennation of two electrode pads can be located on each of described at least two light emitting region.
It at least two light emitting region can be relative to the line intersected with first electrode pad and second electrode pad
Symmetrical structure setting.Therefore, described two light emitting regions can show the identical characteristics of luminescence.
One or more lower extensions may be coupled to first electrode pad, at least one lower extension can be located at described
Between at least two light emitting regions.
Typically, in traditional light emitting diode, second electrode pad is located on second conductive type semiconductor layer simultaneously
It is electrically connected to second conductive type semiconductor layer.As a result, current convergence is around second electrode pad, so that electric current be inhibited to expand
It dissipates.On the contrary, an exemplary embodiment of the present invention, since second electrode pad is located on the first conductive type semiconductor layer,
So can prevent current crowding around second electrode pad.In addition, second conductive type semiconductor layer is divided into multiple shine
Region, so as to realize the uniform current spread on light emitting region.
It should be understood that above-mentioned summary description with it is following be specifically described as it is illustrative and illustrative, and be intended into
One step provides the explanation of the invention such as claim.
Detailed description of the invention
It is included and include that attached drawing in the present specification provides further understanding of the invention and constitutes
Part of specification, attached drawing show the embodiment of the present invention, and principle for explaining the present invention together with the description.
Fig. 1 is the plan view according to the light emitting diode of exemplary embodiment of the present.
Fig. 2 is the cross-sectional view of the line A-A interception in Fig. 1.
Fig. 3 is the cross-sectional view of the line B-B interception in Fig. 1.
Fig. 4 is the cross-sectional view according to the light emitting diode of another exemplary embodiment of the present invention.
Fig. 5 is the plan view according to the light emitting diode of another exemplary embodiment of the present invention.
Fig. 6 is the plan view according to the light emitting diode of another exemplary embodiment of the invention.
Specific embodiment
Hereinafter with reference to attached drawing, the present invention is more fully described, exemplary implementation the invention is shown in the accompanying drawings
Example.However, the present invention can be implemented with many different forms and should not be interpreted as limited to exemplifications set out herein implementation
Example.Additionally, it is provided these exemplary embodiments make the disclosure be thorough and the scope of the present invention will be fully conveyed to
Those skilled in the art.In the accompanying drawings, the size and relative size of layer and region can be amplified for clarity.In attached drawing
In, identical label represents identical element.
It should be understood that it can when the element of such as layer, film, region or substrate is referred to as " " another element "upper"
With directly on the other element or there may also be intermediary elements.On the contrary, when element is referred to as " directly existing " another element
When "upper", intermediary element is not present.
Fig. 1 is according to the plan view of the light emitting diode of exemplary embodiment of the present, and Fig. 2 is that the line A-A in Fig. 1 is cut
The cross-sectional view taken, Fig. 3 are the cross-sectional view of the line B-B interception in Fig. 1.
Referring to figs. 1 to Fig. 3, light emitting diode includes substrate 21, the first conductive type semiconductor layer 23, active layer 25,
Two conductive type semiconductor layers 27, insulating layer 31, first electrode pad 35, second electrode pad 33 and upper ennation 33a.It shines
Diode can also include coupling part 33b, transparent electrode layer 29 and lower extension 35a.Substrate 21 can be sapphire substrates,
But not limited to this.
First conductive type semiconductor layer 23 is located in substrate 21, and it is conductive that second conductive type semiconductor layer 27 is located at first
On type semiconductor layer 23, the setting of active layer 25 the first conductive type semiconductor layer and second conductive type semiconductor layer it
Between.First conductive type semiconductor layer 23, active layer 25 and second conductive type semiconductor layer 27 can be by such as
AlxInyGa1-x-yThe GaN base compound semiconductor materials of N (wherein 0≤x≤1,0≤y≤1,0≤x+y≤1) is formed, but unlimited
In this.Constituent element and the component of active layer 25 are determined to emit and there is the light for needing wavelength, for example, transmitting ultraviolet light or indigo plant
Light.First conductive type semiconductor layer 23 can be n-type nitride semiconductor layer, and second conductive type semiconductor layer 27 can be
P-type nitride semiconductor layer, vice versa.
As shown in the figure, the first conductive type semiconductor layer 23 and/or second conductive type semiconductor layer 27 can have
Single layer structure or multilayered structure.In addition, active layer 25 can have single quantum or multi-quantum pit structure.Light emitting diode
It can also include the buffer layer (not shown) between substrate 21 and the first conductive type semiconductor layer 23.These semiconductor layers
23,25 and 27 (MOCVD) technology can be deposited by Metallo-Organic Chemical Vapor or molecular beam epitaxy (MBE) technology is formed.
Transparent electrode layer 29 can be formed on second conductive type semiconductor layer 27.Transparent electrode layer 29 can be by aoxidizing
Indium tin (ITO) or Ni/Au are formed, and form Ohmic contact with second conductive type semiconductor layer.
Second conductive type semiconductor layer 27 and active layer 25 can be subjected to through photoetching and etch the first conductive-type of exposure
The technique in the region of type semiconductor layer 23.Such technique is typically considered mesa etch (mesa-etching).Table top erosion
Quarter can provide separated light emitting region as shown in Figures 1 and 2.Although in the present embodiment there are two light emitting diode tools
Light emitting region separated from each other, but light emitting diode can have more than two separated light emitting region.In addition, mesa etch
It can execute to form the inclined side surface with the tilt angle within the scope of 30~70 degree.
First electrode pad 35 and second electrode pad 33 are located at partly is led by the first conduction type of mesa etch exposure
On body layer.First electrode pad 35 is electrically connected to the first conductive type semiconductor layer 23.On the contrary, second electrode pad 33 passes through absolutely
Edge layer 31 and the first conductive type semiconductor layer 23 insulate.First electrode pad 35 and second electrode pad 33 are to draw for being bonded
The bonding welding pad of line, and there is the relatively wide region for wire bonding.First electrode pad 35 and second electrode pad 33
It can be formed on the exposed region of the first conductive type semiconductor layer 23, but not limited to this.
Insulating layer 31 is arranged between second electrode pad 33 and the first conductive type semiconductor layer 23, so that second electrode
Pad 33 and the first conductive type semiconductor layer 23 insulate.In addition, insulating layer 31 can cover second conductive type semiconductor layer
27 and active layer 25 the side surface by mesa etch exposure.Insulating layer 31 extends to the second conductive type semiconductor
The upper surface of layer 27, so that the edge of insulating layer 31 and second conductive type semiconductor layer 27 are stacked.
Upper ennation 33a is located on second conductive type semiconductor layer 27 (or transparent electrode layer 29).Upper ennation 33a can
To be connected to second electrode pad 33 by coupling part 33b respectively, and it may be electrically connected to second conductive type semiconductor layer
27.Upper ennation 33a is positioned to allow for electric current and uniformly spreads on second conductive type semiconductor layer 27.Coupling part 33b is logical
Insulating layer 31 and the side surface of second conductive type semiconductor layer 27 and active layer 25 is crossed to separate.
At least one lower extension 35a can extend from first electrode pad 35.Lower extension 35a is located at the first conductive-type
In type semiconductor layer 23 and it is electrically connected to the first conductive type semiconductor layer 23.As it is shown in the figures, lower extension 35a can position
Between separated light emitting region, but not limited to this.Selectively, lower extension 35a can be located at the outside of light emitting region.
Electrode pad 33 and 35, upper ennation 33a, coupling part 33b and lower extension 35a can by same technique by
Identical material (such as Cr/Au) is formed, but not limited to this.Selectively, upper ennation 33a and second electrode pad 33 can be with
It is formed from different materials by different technique.
In the present embodiment, separated light emitting region has relative to positioned at first electrode pad 35 and second electrode pad
The symmetrical structure of line (for example, cutting line B-B) between 33.Upper ennation 33a is also arranged with symmetrical structure, thus luminous zone
Domain can show the identical characteristics of luminescence.Therefore, when light emitting region is divided into two light emitting regions in single light emitting diode,
The technique of encapsulating light emitting diode can also be simpler than the case where using two light emitting diodes connected in parallel with each other.Separately
Outside, the current crowding as caused by defect can be alleviated and can be inclined by what is formed by mesa etch by providing separated light emitting region
Improve light extraction efficiency in oblique side surface.
Fig. 4 is the cross-sectional view according to the light emitting diode of another exemplary embodiment of the present invention.
Referring to Fig. 4, the light emitting diode of the present embodiment is generally similar to the light emitting diode described referring to figs. 1 to Fig. 3.
However, a part of second electrode pad 43 is located at second conductive type semiconductor layer in the light emitting diode of the present embodiment
On 27.
In particular, second electrode pad 43 is located at the first conductive type semiconductor layer 23 by mesa etch exposure
On, a part of second electrode pad 43 is located on second conductive type semiconductor layer 27.Second electrode pad 43 passes through insulation
Layer 31 not only also insulate with second conductive type semiconductor layer 27 and active layer 25 with the insulation of the first conductive type semiconductor layer 23.
Ennation 33a extends from second electrode pad 43.
In the present embodiment, second electrode pad 43 is separated by insulating layer 31 and semiconductor layer, to prevent electric current from gathering around
It squeezes around second electrode pad 43.In addition, in the present embodiment, opposite the region for carrying out mesa etch can be reduced, from
And increase light emitting region.
Fig. 5 is the plan view according to the light emitting diode of another exemplary embodiment of the present invention.
In the embodiment illustrated in fig. 1, the master of first electrode pad 35 and second electrode pad 33 along light emitting diode
Axis setting, light emitting region is separated from each other along the main shaft of light emitting diode.On the contrary, including edge according to the light emitting diode of the present embodiment
Light emitting diode short axle setting first electrode pad 53 and second electrode pad 55 and along light emitting diode short axle that
This separated light emitting region.In addition, separated light emitting region is arranged with symmetrical structure, upper ennation 53a and lower extension 55a
It is arranged with symmetrical structure.
In the present embodiment, upper ennation 53a extends along the periphery of light emitting diode to surround light emitting diode, Mei Geshang
Ennation 53a has the ennation 53b to extend internally from the periphery of light emitting diode.Lower extension 55a is from light emitting diode
The outside of interior side direction LED extends.Each lower extension 55a can be with bifurcated with the extension in each light emitting region
Body 53b.
Fig. 6 is the plan view according to the light emitting diode of another exemplary embodiment of the invention.
Referring to Fig. 6, the light emitting diode of the present embodiment is generally similar to the light emitting diode referring to Fig. 5 description.However,
In the light emitting diode of the present embodiment, lower extension 65a and upper ennation 63a have different arrangements.
In particular, lower extension 65a extends along the periphery of light emitting diode first, it is then extend in light emitting region,
Each upper ennation 63a includes two ennations being arranged on each light emitting region, the two ennations surround and extend to hair
Lower extension 65a in light region.
Although describing some exemplary embodiments to show the present invention, it is to be understood that can carry out it is various to electricity
The relevant modifications and changes of the arrangement of pole pad and ennation.In addition, in the above embodiments, light emitting diode is divided into two
Light emitting region.But more than two light emitting region can be divided into.In some embodiments, light emitting region can thoroughly be divided each other
It opens.In other words, a part of light emitting region can be connected to each other.
It is obvious to those skilled in the art although showing the present invention referring to some exemplary embodiments in conjunction with attached drawing
, without departing from the spirit and scope of the present invention, various modifications and change can be made to the present invention.Therefore, it answers
The understanding, embodiment are only provided in a manner of showing, of the invention thorough open and complete for providing to those skilled in the art
It is complete to understand.Therefore, the invention is intended to cover modifications and changes of the invention in the range of claim and its equivalent.
Claims (7)
1. a kind of light emitting diode, including：
First conductive type semiconductor layer；
Second conductive type semiconductor layer is arranged on the first conductive type semiconductor layer；
Active layer is arranged between the first conductive type semiconductor layer and second conductive type semiconductor layer；
Transparent electrode layer covers second conductive type semiconductor layer；
Second electrode pad including the first area being arranged on the first conductive type semiconductor layer and is arranged in transparent electrode layer
On second area；And
Insulating layer is arranged between the first conductive type semiconductor layer and second electrode pad, and the insulating layer makes second electrode
Pad and the first conductive type semiconductor layer insulate,
Wherein, second conductive type semiconductor layer and active layer, which are divided into, limits at least two light emitting regions,
The light emitting diode further includes the first electrode pad for being connected to the first conductive type semiconductor layer,
Wherein, at least two light emitting region is arranged to about the imagination by first electrode pad and second electrode pad
Line is symmetrical,
The light emitting diode further includes at least one first ennation for being connected to first electrode pad,
Wherein, the first lower extension of at least one first ennation is arranged in the first of at least two light emitting region
Between light emitting region and the second light emitting region,
Wherein, the second lower extension of at least one first ennation and third lower extension are located at the outer of light emitting region
Side,
Each of first lower extension, the second lower extension and third lower extension extend in a different direction,
Wherein, first electrode pad and second electrode pad are located at the first light emitting region of at least two light emitting region and the
Between two light emitting regions.
2. light emitting diode as described in claim 1, the light emitting diode further includes being connected to second electrode pad and cloth
Set the ennation on transparent electrode layer.
3. light emitting diode as described in claim 1, wherein the side surface of second conductive type semiconductor layer and active layer is logical
Cross insulating layer and second electrode pads insulated.
4. light emitting diode as claimed in claim 3, wherein insulating layer extends to the upper surface of transparent electrode layer and is arranged
On the upper surface of transparent electrode layer.
5. light emitting diode as claimed in claim 3, wherein the side surface of second conductive type semiconductor layer and active layer tool
There is the tilt angle within the scope of 30~70 degree.
6. light emitting diode as claimed in claim 3, wherein second electrode pad further includes being located at first area and the secondth area
Third region between domain,
Wherein, third region is arranged on the side surface.
7. light emitting diode as described in claim 1, wherein second electrode pad and second conductive type semiconductor layer pass through
At least described insulating layer is separated from each other.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2009-0123862 | 2009-12-14 | ||
| KR1020090123862A KR101055768B1 (en) | 2009-12-14 | 2009-12-14 | Light Emitting Diodes with Electrode Pads |
| CN2010105516780A CN102097566A (en) | 2009-12-14 | 2010-11-16 | Light emitting diode having electrode pads |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105516780A Division CN102097566A (en) | 2009-12-14 | 2010-11-16 | Light emitting diode having electrode pads |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105489728A CN105489728A (en) | 2016-04-13 |
| CN105489728B true CN105489728B (en) | 2018-11-16 |
Family
ID=43639128
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105516780A Pending CN102097566A (en) | 2009-12-14 | 2010-11-16 | Light emitting diode having electrode pads |
| CN201510823096.6A Active CN105489728B (en) | 2009-12-14 | 2010-11-16 | Light emitting diode with electrode pad |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105516780A Pending CN102097566A (en) | 2009-12-14 | 2010-11-16 | Light emitting diode having electrode pads |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8541806B2 (en) |
| EP (1) | EP2333849A3 (en) |
| JP (2) | JP2011124580A (en) |
| KR (1) | KR101055768B1 (en) |
| CN (2) | CN102097566A (en) |
| TW (1) | TWI418061B (en) |
| WO (1) | WO2011074768A1 (en) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9236532B2 (en) * | 2009-12-14 | 2016-01-12 | Seoul Viosys Co., Ltd. | Light emitting diode having electrode pads |
| WO2011083923A2 (en) | 2010-01-07 | 2011-07-14 | Seoul Opto Device Co., Ltd. | Light emitting diode having electrode pads |
| KR20120015651A (en) * | 2010-08-12 | 2012-02-22 | 서울옵토디바이스주식회사 | Light emitting diode with improved light extraction efficiency |
| TW201320402A (en) * | 2011-11-04 | 2013-05-16 | Lextar Electronics Corp | Solid state light emitting semiconductor device |
| TWI479694B (en) * | 2012-01-11 | 2015-04-01 | Formosa Epitaxy Inc | Light emitting diode wafers |
| KR101368720B1 (en) | 2013-01-10 | 2014-03-03 | 주식회사 세미콘라이트 | Semiconductor light emimitting device |
| TWI438895B (en) * | 2012-02-09 | 2014-05-21 | Lextar Electronics Corp | Light emitting diode array |
| TWI535077B (en) | 2012-05-24 | 2016-05-21 | 台達電子工業股份有限公司 | Light emitting?apparatus and light emitting module thereof |
| WO2014038794A1 (en) * | 2012-09-07 | 2014-03-13 | 서울바이오시스 주식회사 | Wafer level light-emitting diode array |
| US9318529B2 (en) | 2012-09-07 | 2016-04-19 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
| US10388690B2 (en) | 2012-08-07 | 2019-08-20 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
| US10804316B2 (en) * | 2012-08-07 | 2020-10-13 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array |
| US9318530B2 (en) | 2012-08-07 | 2016-04-19 | Seoul Viosys Co., Ltd. | Wafer level light-emitting diode array and method for manufacturing same |
| USD709840S1 (en) | 2012-10-03 | 2014-07-29 | Epistar Corporation | Light-emitting diode |
| CN102881797B (en) * | 2012-10-18 | 2015-02-25 | 安徽三安光电有限公司 | Gallium nitride based light emitting diode with current expanding structure |
| KR101532917B1 (en) * | 2012-12-03 | 2015-07-01 | 일진엘이디(주) | Semiconductor Light Emitting Diode with Improved Current Spreading Performance and High Brightness Comprising Seperation Region |
| KR20140076204A (en) * | 2012-12-12 | 2014-06-20 | 서울바이오시스 주식회사 | Light emitting diode and method of fabricating the same |
| JP2014236038A (en) * | 2013-05-31 | 2014-12-15 | 信越半導体株式会社 | Light-emitting device |
| CN110047865B (en) * | 2013-09-03 | 2024-02-23 | 晶元光电股份有限公司 | Light-emitting element with multiple light-emitting structures |
| WO2015074353A1 (en) * | 2013-11-25 | 2015-05-28 | 扬州中科半导体照明有限公司 | Semiconductor light-emitting diode chip |
| USD770397S1 (en) * | 2014-07-22 | 2016-11-01 | Epistar Corporation | Light-emitting diode unit |
| USD743355S1 (en) * | 2014-07-22 | 2015-11-17 | Epistar Corporation | Light-emitting diode unit |
| KR101888608B1 (en) | 2014-10-17 | 2018-09-20 | 엘지이노텍 주식회사 | Light emitting device package and lighting apparatus |
| USD750580S1 (en) * | 2014-10-30 | 2016-03-01 | Epistar Corporation | Light-emitting diode array |
| US9905729B2 (en) | 2015-03-27 | 2018-02-27 | Seoul Viosys Co., Ltd. | Light emitting diode |
| USD775090S1 (en) * | 2015-04-23 | 2016-12-27 | Seoul Viosys Co., Ltd. | Light emitting diode |
| TWD178892S (en) * | 2015-11-17 | 2016-10-11 | 晶元光電股份有限公司 | Portion of light-emitting diode array |
| DE102017205639A1 (en) | 2016-04-18 | 2017-10-19 | Seoul Viosys Co., Ltd | Light-emitting diode with high efficiency |
| JP6928575B2 (en) * | 2016-04-18 | 2021-09-01 | ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． | High efficiency light emitting diode |
| KR102550007B1 (en) * | 2016-11-30 | 2023-07-03 | 서울바이오시스 주식회사 | Light emitting diode having plurality of light emitting cells |
| US10475962B2 (en) * | 2017-02-15 | 2019-11-12 | Epistar Corporation | Optoelectronic device |
| CN108417680B (en) * | 2017-02-21 | 2020-04-28 | 福建兆元光电有限公司 | Semiconductor LED chip with high current diffusion efficiency |
| CN106972090A (en) * | 2017-04-14 | 2017-07-21 | 华南理工大学 | A kind of arc line shaped N electrode and light emitting diode (LED) chip with vertical structure |
| JP2018026597A (en) * | 2017-11-16 | 2018-02-15 | ローム株式会社 | Light-emitting device and light-emitting device package |
| CN108198923A (en) * | 2017-11-23 | 2018-06-22 | 华灿光电（浙江）有限公司 | A kind of light-emitting diode chip for backlight unit and preparation method thereof |
| CN108110024A (en) * | 2018-01-16 | 2018-06-01 | 福建兆元光电有限公司 | A kind of semiconductor light-emitting elements |
| CN112385052A (en) * | 2019-10-23 | 2021-02-19 | 安徽三安光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN113659052B (en) * | 2021-08-16 | 2023-08-01 | 泉州三安半导体科技有限公司 | Light emitting diode, light emitting module and display device |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001345480A (en) * | 2000-03-31 | 2001-12-14 | Toyoda Gosei Co Ltd | Iii nitride compound semiconductor element |
| JP2003142727A (en) * | 2001-11-07 | 2003-05-16 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device and its manufacturing method |
| CN1822400A (en) * | 2004-12-31 | 2006-08-23 | Lg电子有限公司 | High output light emitting diode and method for fabricating the same |
| JP2007049160A (en) * | 2005-08-09 | 2007-02-22 | Samsung Electro Mech Co Ltd | Nitride semiconductor light-emitting device |
| KR100809220B1 (en) * | 2007-02-01 | 2008-02-29 | 삼성전기주식회사 | Semiconductor light emitting device |
| JP2008166784A (en) * | 2007-01-03 | 2008-07-17 | Samsung Electro Mech Co Ltd | Nitride semiconductor light-emitting element |
| CN101257072A (en) * | 2007-12-26 | 2008-09-03 | 厦门三安电子有限公司 | LED for stereometric space distribution electrode and its making method |
| CN101304157A (en) * | 2007-05-11 | 2008-11-12 | 富士施乐株式会社 | Surface emitting semiconductor laser and manufacturing method thereof |
| CN101431141A (en) * | 2007-09-14 | 2009-05-13 | 夏普株式会社 | Nitride semiconductor light-emitting device |
| JP2009238963A (en) * | 2008-03-26 | 2009-10-15 | Kyocera Corp | Light-emitting diode chip and manufacturing method thereof |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3447527B2 (en) * | 1996-09-09 | 2003-09-16 | 株式会社東芝 | Semiconductor light emitting device and method of manufacturing the same |
| US6650018B1 (en) | 2002-05-24 | 2003-11-18 | Axt, Inc. | High power, high luminous flux light emitting diode and method of making same |
| JP4053926B2 (en) * | 2002-05-27 | 2008-02-27 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device and light emitting device using the same |
| JP2005012091A (en) * | 2003-06-20 | 2005-01-13 | Stanley Electric Co Ltd | Led for optical fiber and its manufacturing method |
| CN2643486Y (en) * | 2003-08-01 | 2004-09-22 | 艾笛森光电股份有限公司 | Semiconductor light source |
| TWI282866B (en) * | 2005-07-12 | 2007-06-21 | Benq Corp | Scan system with multi-light sources and method of the same |
| JP4978014B2 (en) | 2006-01-30 | 2012-07-18 | サンケン電気株式会社 | Semiconductor light emitting device and manufacturing method thereof |
| KR100833309B1 (en) * | 2006-04-04 | 2008-05-28 | 삼성전기주식회사 | Nitride semiconductor light emitting device |
| CN102779918B (en) * | 2007-02-01 | 2015-09-02 | 日亚化学工业株式会社 | Semiconductor light-emitting elements |
| TWI366291B (en) * | 2007-03-30 | 2012-06-11 | Epistar Corp | Semiconductor light-emitting device having stacked transparent electrodes |
| DE102007022947B4 (en) * | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelectronic semiconductor body and method for producing such |
| TW200919768A (en) * | 2007-10-19 | 2009-05-01 | Huga Optotech Inc | Semiconductor light-emitting device and method of fabricating the same |
| CN101499510B (en) | 2008-01-30 | 2011-06-22 | 富士迈半导体精密工业（上海）有限公司 | Semiconductor luminous element |
-
2009
- 2009-12-14 KR KR1020090123862A patent/KR101055768B1/en active IP Right Grant
-
2010
- 2010-10-12 WO PCT/KR2010/006960 patent/WO2011074768A1/en active Application Filing
- 2010-10-19 EP EP10188092.0A patent/EP2333849A3/en not_active Ceased
- 2010-11-16 CN CN2010105516780A patent/CN102097566A/en active Pending
- 2010-11-16 CN CN201510823096.6A patent/CN105489728B/en active Active
- 2010-11-23 TW TW099140424A patent/TWI418061B/en active
- 2010-12-09 US US12/963,921 patent/US8541806B2/en active Active
- 2010-12-10 JP JP2010275336A patent/JP2011124580A/en active Pending
-
2015
- 2015-05-07 JP JP2015095055A patent/JP6199338B2/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001345480A (en) * | 2000-03-31 | 2001-12-14 | Toyoda Gosei Co Ltd | Iii nitride compound semiconductor element |
| JP2003142727A (en) * | 2001-11-07 | 2003-05-16 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device and its manufacturing method |
| CN1822400A (en) * | 2004-12-31 | 2006-08-23 | Lg电子有限公司 | High output light emitting diode and method for fabricating the same |
| JP2007049160A (en) * | 2005-08-09 | 2007-02-22 | Samsung Electro Mech Co Ltd | Nitride semiconductor light-emitting device |
| JP2008166784A (en) * | 2007-01-03 | 2008-07-17 | Samsung Electro Mech Co Ltd | Nitride semiconductor light-emitting element |
| KR100809220B1 (en) * | 2007-02-01 | 2008-02-29 | 삼성전기주식회사 | Semiconductor light emitting device |
| CN101304157A (en) * | 2007-05-11 | 2008-11-12 | 富士施乐株式会社 | Surface emitting semiconductor laser and manufacturing method thereof |
| CN101431141A (en) * | 2007-09-14 | 2009-05-13 | 夏普株式会社 | Nitride semiconductor light-emitting device |
| CN101257072A (en) * | 2007-12-26 | 2008-09-03 | 厦门三安电子有限公司 | LED for stereometric space distribution electrode and its making method |
| JP2009238963A (en) * | 2008-03-26 | 2009-10-15 | Kyocera Corp | Light-emitting diode chip and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI418061B (en) | 2013-12-01 |
| US20110140160A1 (en) | 2011-06-16 |
| KR20110067313A (en) | 2011-06-22 |
| EP2333849A2 (en) | 2011-06-15 |
| TW201138152A (en) | 2011-11-01 |
| KR101055768B1 (en) | 2011-08-11 |
| JP2015159328A (en) | 2015-09-03 |
| CN102097566A (en) | 2011-06-15 |
| JP6199338B2 (en) | 2017-09-20 |
| CN105489728A (en) | 2016-04-13 |
| JP2011124580A (en) | 2011-06-23 |
| WO2011074768A1 (en) | 2011-06-23 |
| EP2333849A3 (en) | 2013-05-08 |
| US8541806B2 (en) | 2013-09-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105489728B (en) | Light emitting diode with electrode pad | |
| US8076688B2 (en) | Light emitting diode having extensions of electrodes for current spreading | |
| US8525212B2 (en) | Light emitting diode having electrode extensions | |
| CN105355748B (en) | Light emitting diode | |
| US8680559B2 (en) | Light emitting diode having electrode extensions for current spreading | |
| KR101423723B1 (en) | Light emitting diode package | |
| TW201828496A (en) | Light-Emitting Diode Device | |
| KR101625130B1 (en) | Light emitting diode having electrode pads | |
| KR101272705B1 (en) | A light emitting diode having uniform current density | |
| KR100674875B1 (en) | Flip chip type light emitting device | |
| KR101636034B1 (en) | Light emitting diode having electrode pads | |
| KR101649286B1 (en) | Light emitting diode having electrode pads | |
| KR101547322B1 (en) | Light emitting diode package | |
| KR101615277B1 (en) | Light emitting diode having electrode pads | |
| KR101623950B1 (en) | Light emitting diode having electrode pads | |
| KR20160051718A (en) | Light emitting diode having electrode pads | |
| KR101615283B1 (en) | Light emitting diode having electrode pads | |
| KR101618800B1 (en) | Light emitting diode having electrode pads | |
| KR101618799B1 (en) | Light emitting diode having electrode pads | |
| KR101623952B1 (en) | Light emitting diode having electrode pads | |
| KR101623951B1 (en) | Light emitting diode having electrode pads |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |