CN105489478A - Regulation control method for thin layer epitaxial transition region of heavily doped PH substrate - Google Patents
Regulation control method for thin layer epitaxial transition region of heavily doped PH substrate Download PDFInfo
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- CN105489478A CN105489478A CN201510905793.6A CN201510905793A CN105489478A CN 105489478 A CN105489478 A CN 105489478A CN 201510905793 A CN201510905793 A CN 201510905793A CN 105489478 A CN105489478 A CN 105489478A
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H—ELECTRICITY
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Abstract
The invention discloses a regulation control method for a thin layer epitaxial transition region of a heavily doped PH substrate, and relates to the technical field of epitaxial layer growth methods. The method comprises the following steps: fixing the temperature and TCS flow of a uniwafer epitaxial growth system during epitaxial growth of a substrate; during the epitaxial growth of the substrate, using a same doping process for CAP layer growth and epitaxial layer growth; and during the epitaxial layer growth, changing a VENT pressure in the uniwafer epitaxial growth system to be greater than or less than a chamber pressure of the system, and adjusting the steepness of a transitional region of the epitaxial layer. According to the method, the epitaxial layer growth rate is influenced by adjusting the matching of a pressure between a VENT pipeline and a cavity without changing the TCS flow, so that the length of the transitional region from the substrate to the epitaxial layer is influenced and controlled, the transitional region is steeper, and the edge resistivity numerical value of the epitaxial layer can be remarkably increased.
Description
Technical field
The present invention relates to the growing method technical field of epitaxial loayer, particularly relate to a kind of regulate and control method of heavily doped PH Substrate lamina extension transition region.
Background technology
For heavily doped PH substrate low pressure MOS device epitaxial material new product development, the test result of resistivity (four point probe, 4PP tests) affects greatly by epitaxial layer transition zone, and transition region is more precipitous, and 4PP test result is higher, and transition region more delays, and 4PP test result is lower; For general epitaxy technique, electrical resistivity of epitaxy can be adjusted by adjustment dopant dose, and epitaxial thickness can be adjusted by growth rate and growth time, and extension transition region does not also have general method to adjust.Along with the development of integrated circuit, the market demand of large scale low pressure MOS device epitaxial material is increasing, in the market for the low pressure MOS epitaxial material demand range eruptive growth of more than 8 inches.We are at present in the urgent need to a kind of method of adjustment that accurately can control heavily doped PH substrate low pressure MOS epitaxial material transition region.
In epitaxial process, the length of transition region is mainly by the impact of the factor such as extension type of furnace difference and growth temperature, and for the same type of furnace, when growth temperature is identical, mainly be limited by the impact of growth rate, growth rate is higher, and transition region is more precipitous, growth rate is lower, and transition region more delays.The method of conventional lifting speed, strengthen TCS flow, the deposition producing a large amount of Si obtains relatively high growth rate, such mode has the drawback of three aspects, one is the waste causing a large amount of TCS, two is easily produce crystal defect, causes yield to reduce, and three is obtain the precipitous limited extent of transition region.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of regulate and control method of heavily doped PH Substrate lamina extension transition region, described method is not when changing TCS flow, by the pressure match between adjustment VENT pipeline and cavity, affect outer layer growth speed, the waste of a large amount of TCS can not be caused, yield is high, and the precipitous amplitude in epitaxial layer transition zone of acquisition is large.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of regulate and control method of heavily doped PH Substrate lamina extension transition region, is characterized in that comprising the steps:
1) temperature of monolithic epitaxial growth system and TCS flow during stationary substrate epitaxial growth;
2) when substrate epitaxial grows, CAP layer growth and outer layer growth use identical doping process;
3) when outer layer growth, change the VENT pressure in monolithic epitaxial growth system, make VENT pressure be greater than or less than the chamber pressure of system, regulate the steep of epitaxial layer transition zone.
Further technical scheme is: described method also comprises:
Before epitaxial growth, monolithic epitaxial growth system is corroded and the step of pedestal bag silicon process, and front polishing HCL process is carried out to substrate surface, remove the residual local defect of substrate surface and S
io
2step.
Further technical scheme is: described method also comprises the steps:
By adjustment VENT pressure, change the steep of epitaxial layer transition zone, and respectively spreading resistance profile analysis is carried out to corresponding epitaxial wafer, use the steep of the transition region of four point probe and growth rate monitored in common heavily doped PH substrate low pressure MOS epitaxial wafer, the steep of epitaxial layer transition zone is mated with the requirement of practical devices.
Further technical scheme is: adopt ASME2000 type monolithic epitaxial growth system, infrared lamp array radiation heats, and high purity graphite pedestal is substrate carrier, and protection gas is ultra-pure H2 gas, and purity reaches more than 99.999999%.
Further technical scheme is: use 8 inches of heavily doped PH substrates, crystal orientation <100>, and resistivity 0.001-0.0015ohm.cm, supersealing carry on the back envelope technique.
Further technical scheme is: the growth temperature of fixing monolithic epitaxial growth system is 1135 DEG C, and fixing TCS flow is 7g/min.
Further technical scheme is: before epitaxial growth, carrying out fully removing from mixing process, at 1190 DEG C of temperature, passing into large discharge HCL gas 20slm/min, eroding residual Si monolithic epitaxial growth system, and when corroding Si residual on pedestal, H
2flow set is 10slm/min, during the Si that corrosion bell jar inwall remains, strengthens H2 flow to 60slm/min.
Further technical scheme is: the H carrying out a period of time between cap layer growth and outer layer growth
2purging catches up with gas.
Further technical scheme is: when epitaxial growth, the pressure keeping chamber in monolithic epitaxial growth system is that 790torr is constant, by VENT pressure in system, adjust according to both direction, one: VENT pressure is turned down, be low to moderate identical with ambient pressure, i.e. 760torr, two: heightened by VENT pressure, according to ASM system, most height adjustment is to 840torr.
Further technical scheme is: the adjusting range of VENT pressure is 760torr-840torr.
The beneficial effect adopting technique scheme to produce is: described method is not when changing TCS flow, by the pressure match between adjustment VENT pipeline and cavity, affect outer layer growth speed, thus affect and control the length of transition zone of substrate to epitaxial loayer, transition region is more precipitous, can significantly improve epilayer edges resistivity value, reduction system, from mixing impact, improves the BVDS discreteness of low pressure MOS device.In fact the pressure of VENT is larger, and transition region is more precipitous, in actual new product development process, can adjust VENT pressure value according to actual needs, makes the every test data destination matches in road after the transition region of epitaxial wafer and device, improves the quality of products.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention's monolithic epitaxial growth system used;
Fig. 2 is described monolithic epitaxial growth system VENT loine pressure adjustment position schematic diagram;
Fig. 3 is the epitaxial layer transition zone scatter chart adopting the method for the invention growth;
Fig. 4 is adjustment flow chart of the present invention;
Wherein: 1, VENT Pressure gauge 2, chamber Pressure gauge.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
Embodiment one
The invention discloses a kind of regulate and control method of heavily doped PH Substrate lamina extension transition region, comprise the steps:
1) temperature of monolithic epitaxial growth system and TCS(trichlorosilane during stationary substrate epitaxial growth) flow.
2) when substrate epitaxial grows, CAP layer growth and outer layer growth use identical doping process.
3) when outer layer growth, the VENT(exhaust in monolithic epitaxial growth system is changed) pressure, make VENT pressure be greater than or less than the chamber(cavity of system) pressure, regulate the steep of epitaxial layer transition zone.
4) by adjustment VENT pressure, change the steep of epitaxial layer transition zone, and respectively spreading resistance profile analysis is carried out to corresponding epitaxial wafer, use the steep of the transition region of four point probe and growth rate monitored in common heavily doped PH substrate low pressure MOS epitaxial wafer, the steep of epitaxial layer transition zone is mated with the requirement of practical devices.
Embodiment two
The invention discloses a kind of regulate and control method of heavily doped PH Substrate lamina extension transition region, comprise the steps:
Adopt ASME2000 type monolithic epitaxial growth system, as shown in Figure 1, infrared lamp array radiation heats, and high purity graphite pedestal is silicon chip carrier, and protection gas is ultra-pure H
2gas, purity reaches more than 99.999999%.
Use 8 inches of heavily doped PH substrates, crystal orientation <100>, resistivity 0.001-0.0015ohm.cm are interval, and supersealing carries on the back envelope technique;
Before epitaxial growth, carrying out fully removing from mixing process to system, at 1190 DEG C of temperature, passing into large discharge HCL gas 20slm/min, when eroding Si residual on residual Si and pedestal, H
2flow set is 10slm/min, during the Si that corrosion bell jar inwall remains, strengthens H
2flow is to 60slm/min;
H is carried out on surface symmetrical before epitaxial growth
2bake(toasts) and front polishing, object removes residual lattice defect and S
io
2, prevent it to be introduced into epitaxial loayer.
During epitaxial growth, temperature is fixed as 1135 DEG C, and this growth temperature can reduce system from the impact of mixing, and can ensure again the generation avoiding lattice defect, and fixing TCS flow is 7g/min;
Epitaxial growth uses identical doping process, and namely cap layer is with doping, and when doping flow and growth, flow is consistent, and when TCS flow growth cap layer and epitaxial loayer, flow set is constant, carries out the H of 60s between cap layer and epitaxial loayer
2purging catches up with gas (purge).
When above technique is fixing, chamber pressure is kept to be 790torr constant (chamber pressure during epitaxial growth), by VENT pressure (i.e. H
2carrying out 60s purges when catching up with gas, and TCS enters pressure during VENT pipeline) adjust according to two test directions, VENT loine pressure adjustment position is as shown in Figure 2.Test one: turned down by VENT pressure, be low to moderate identical with ambient pressure, i.e. 760torr, test two: be heightened by VENT pressure, according to ASM system, most height adjustment is to 840torr, and the transition region curves that above two tests obtain as shown in Figure 3.
As seen from Figure 3, VENT pressure is larger, and transition region is more precipitous.Above two tests are two extreme cases of the VENT pressure of simulation, in actual new product development process, can be according to actual needs, adjustment VENT pressure value, because epitaxial layer transition zone is not more steep better, key is will test data destination matches every with road after the device of client, as shown in Figure 4.The adjustment of VENT pressure generally can not more than 760torr-840torr scope.
Process monitoring data and the resistivity data of employing the method for the invention are as shown in the table:
Described method is not when changing TCS flow, by the pressure match between adjustment VENT pipeline and cavity, affect outer layer growth speed, thus affect and control the length of transition zone of substrate to epitaxial loayer, transition region is more precipitous, can significantly improve epilayer edges resistivity value, reduction system, from mixing impact, improves the BVDS discreteness of low pressure MOS device.In fact the pressure of VENT is larger, and transition region is more precipitous, in actual new product development process, can adjust VENT pressure value according to actual needs, makes the every test data destination matches in road after the transition region of epitaxial wafer and device, improves the quality of products.
Claims (10)
1. a regulate and control method for heavily doped PH Substrate lamina extension transition region, is characterized in that comprising the steps:
1) temperature of monolithic epitaxial growth system and TCS flow during stationary substrate epitaxial growth;
2) when substrate epitaxial grows, CAP layer growth and outer layer growth use identical doping process;
3) when outer layer growth, change the VENT pressure in monolithic epitaxial growth system, make VENT pressure be greater than or less than the chamber pressure of system, regulate the steep of epitaxial layer transition zone.
2. the regulate and control method of heavily doped PH Substrate lamina extension transition region as claimed in claim 1, is characterized in that described method also comprises:
Before epitaxial growth, monolithic epitaxial growth system is corroded and the step of pedestal bag silicon process, and front polishing HCL process is carried out to substrate surface, remove the residual local defect of substrate surface and S
io
2step.
3. the regulate and control method of heavily doped PH Substrate lamina extension transition region as claimed in claim 1, is characterized in that described method also comprises the steps:
By adjustment VENT pressure, change the steep of epitaxial layer transition zone, and respectively spreading resistance profile analysis is carried out to corresponding epitaxial wafer, use the steep of the transition region of four point probe and growth rate monitored in common heavily doped PH substrate low pressure MOS epitaxial wafer, the steep of epitaxial layer transition zone is mated with the requirement of practical devices.
4. the regulate and control method of heavily doped PH Substrate lamina extension transition region as claimed in claim 1; it is characterized in that: adopt ASME2000 type monolithic epitaxial growth system; infrared lamp array radiation heats; high purity graphite pedestal is substrate carrier; protection gas is ultra-pure H2 gas, and purity reaches more than 99.999999%.
5. the regulate and control method of heavily doped PH Substrate lamina extension transition region as claimed in claim 1, it is characterized in that: use 8 inches of heavily doped PH substrates, crystal orientation <100>, resistivity 0.001-0.0015ohm.cm, supersealing carry on the back envelope technique.
6. the regulate and control method of heavily doped PH Substrate lamina extension transition region as claimed in claim 1, is characterized in that: the growth temperature of fixing monolithic epitaxial growth system is 1135 DEG C, and fixing TCS flow is 7g/min.
7. the regulate and control method of heavily doped PH Substrate lamina extension transition region as claimed in claim 2, it is characterized in that: before epitaxial growth, carry out fully removing from mixing process to monolithic epitaxial growth system, at 1190 DEG C of temperature, pass into large discharge HCL gas 20slm/min, erode residual Si, and when corroding Si residual on pedestal, H
2flow set is 10slm/min, during the Si that corrosion bell jar inwall remains, strengthens H2 flow to 60slm/min.
8. the regulate and control method of heavily doped PH Substrate lamina extension transition region as claimed in claim 1, is characterized in that: the H carrying out a period of time between cap layer growth and outer layer growth
2purging catches up with gas.
9. the regulate and control method of heavily doped PH Substrate lamina extension transition region as claimed in claim 1, it is characterized in that: when epitaxial growth, the pressure keeping chamber in monolithic epitaxial growth system is that 790torr is constant, by VENT pressure in system, adjusts according to both direction, one: VENT pressure is turned down, be low to moderate identical with ambient pressure, i.e. 760torr, two: VENT pressure is heightened, according to ASM system, most height adjustment is to 840torr.
10. the regulate and control method of heavily doped PH Substrate lamina extension transition region as claimed in claim 1, is characterized in that: the adjusting range of VENT pressure is 760torr-840torr.
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Cited By (2)
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| CN108417483A (en) * | 2018-03-29 | 2018-08-17 | 南京国盛电子有限公司 | A kind of preparation method of 8 inches of high-power IGBTs component epitaxial wafer |
| CN115506010A (en) * | 2022-10-11 | 2022-12-23 | 中环领先半导体材料有限公司 | Process method for improving depth of epitaxial edge flat area of ultra-heavily doped Ph substrate |
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| CN104851784A (en) * | 2015-05-29 | 2015-08-19 | 中国电子科技集团公司第四十六研究所 | Method for growing high-resistance thick layer silicon epitaxy on 6-inch heavily As-doped silicon substrate |
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| CN115506010A (en) * | 2022-10-11 | 2022-12-23 | 中环领先半导体材料有限公司 | Process method for improving depth of epitaxial edge flat area of ultra-heavily doped Ph substrate |
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