CN105470369B - A kind of low-power LED of micro-capacitance sensor structure and its preparation method of graphene film - Google Patents
A kind of low-power LED of micro-capacitance sensor structure and its preparation method of graphene film Download PDFInfo
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- CN105470369B CN105470369B CN201510803880.0A CN201510803880A CN105470369B CN 105470369 B CN105470369 B CN 105470369B CN 201510803880 A CN201510803880 A CN 201510803880A CN 105470369 B CN105470369 B CN 105470369B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 230000003287 optical effect Effects 0.000 claims abstract description 21
- 239000011324 bead Substances 0.000 claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 10
- 239000000725 suspension Substances 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 229920005479 Lucite® Polymers 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 238000005119 centrifugation Methods 0.000 claims description 3
- 238000001914 filtration Methods 0.000 claims description 3
- 238000005342 ion exchange Methods 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 10
- 238000005286 illumination Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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Abstract
The invention discloses a kind of low-power LED of micro-capacitance sensor structure and its preparation method of graphene film, including heat dissipating layer, reflector layer, drive block, cushion chamber and LED lamp bead layer, the heat dissipating layer is in conical structure, the heat dissipating layer conical section is glued with reflector layer, the reflector layer upper end is provided with drive block, the drive block flushes with heat dissipating layer top, the reflector layer has been orderly arranged outside each cushion chamber, graphene film, LED lamp bead layer and optical waveguide layer, and the optical waveguide layer outward flange is connected with the outward flange of drive block.The present invention makes full use of the homogeneous conductive of graphene, and spreading the combination between the reflecting effect of crystal grain and the optical waveguide layer of fluorescent bead can ensure to bring the brightness of illumination of maximum with minimum power.
Description
Technical field
The invention belongs to LED technology field, and in particular to the low-power LED and its graphene film of a kind of micro-capacitance sensor structure
Preparation method.
Background technology
LED (LightingEmittingDiode) illuminations are LED lighting, are that a kind of semiconducting solid lights
Device.It is by the use of solid semiconductor chip as luminescent material, and it is superfluous that compound releasing occurs by carrier in the semiconductors
Energy and cause photon to be launched, directly send red, yellow, blue, green light, on this basis, utilize the principle of three primary colours, addition
Fluorescent material, the light of the random color such as red, yellow, blue, green, blue or green, orange, purple, white can be sent.LED lamp be exactly by the use of LED as
The ligthing paraphernalia that light source manufactures.
In LED illumination lamp, bottom lamp, pendent lamp, the decoration such as projecting lamp uses, and the LED illumination lamp for reflecting purposes can be complete
It is competent in any occasion, including the place that the Art Museum, museum etc. is higher to face chromaticity requirements.But for market, office building
For extensive facility, although being born as the LED lamp illuminated on a large scale, (LED chip is sent its directive property
Just straight line, diversity is bad) it is too high, cause the illumination that design is average in large area highly difficult.Lamp tube type LED illumination lamp
Overmatter, design cost is too high, loses energy-saving effect.Therefore, decorative use occasion, LED illumination lamp completely may be used at this stage
With large area room lighting is also immature.
Constantly open with LED market, LED use low-power has obtained most affirmative, with usage amount
Increase and the variation, the degree of regulation of bright and dark light etc. of using effect, LED power, light all encounter design studies
Bottleneck, further method can just be had by only breaking a deadlock.Pass through the pursuit side of the general survey, at present LED of long-term use
To still have it is following some：1st, LED power reduces, and the reduction of overall power could load more light fixtures；2nd, the dance ＆ art of LED
Effect；3rd, the radiating effect of LED.
The content of the invention
It is an object of the invention to provide a kind of low-power LED of micro-capacitance sensor structure and its preparation method of graphene film,
The present invention makes full use of the homogeneous conductive of graphene, spreads the combination energy between the reflecting effect of crystal grain and the optical waveguide layer of fluorescent bead
Enough brightness of illuminations for ensureing to bring maximum with minimum power.
A kind of low-power LED of micro-capacitance sensor structure, including heat dissipating layer, reflector layer, drive block, cushion chamber and LED lamp bead
Layer, the heat dissipating layer is in conical structure, and the heat dissipating layer conical section is glued with reflector layer, and the reflector layer upper end is provided with
Drive block, the drive block flush with heat dissipating layer top, and the reflector layer has been orderly arranged outside each cushion chamber, graphene film, LED
Lamp bead layer and optical waveguide layer, the optical waveguide layer outward flange are connected with the outward flange of drive block.
Fluorescent bead is provided with the optical waveguide layer, the fluorescent bead is spherical in shape, and particle diameter is not more than 1mm.
The optical waveguide layer is not more than 5mm using high acrylic lucite, the optical waveguide layer thickness thoroughly.
The reflector layer outer surface is provided with diffusion crystal grain, and the diffusion crystal grain is not more than 1mm.
The thickness of the graphene film is not more than 300 microns.
A kind of preparation method of the graphene film of the low-power LED of micro-capacitance sensor structure is as follows：
(1) preparation of graphene oxide colloidal sol：By graphene oxide be ground into particle diameter be 1-40 microns fine powder, and with it is molten
Agent is configured to the suspension that concentration is 0.5-6mg/ml, after being ultrasonically treated 10-120 minutes, removes unstable miscellaneous in suspension
Matter, obtain graphene oxide colloidal sol；
(2) preparation without support graphene oxide film：Graphene oxide colloidal sol prepared by step (1) is heated to 30-
100 DEG C, by 10-200 minutes, film is formed in colloidal sol liquid level, film is taken out from liquid level, and it is true at a temperature of 50-150 DEG C
Sky is dried, and is obtained without support graphene oxide film.
The solvent uses the one or more of ethanol, acetone or water.
The mode used in unstable impurity in the removing suspension is ion exchange, filtering, free settling or centrifugation
Separation.
Compared with prior art, the invention has the advantages that：LED provided by the invention is made using graphene film
For conductive microgrid film, surface loading LED lamp bead, the good electric conductivity of components utilising graphene film and low-resistivity, height dissipate
Thermal effect, while LED is powered, efficiency is uniform；Setting using reflector layer and diffusion crystal grain contributes to the light of LED
Reflected, reach the effect for making full use of light source, greatly reduce power demand；Using the optical waveguide layer with fluorescent bead, energy
It is enough fully to break up light, prevent dazzling；Inside sets heat dissipating layer, has good radiating effect, ensures making for circuit material
Use the life-span；The preparation method of grapheme conductive film provided by the invention, simple and quick, effect is good, and configuration is convenient, and raw material sources
Extensively.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention；
Description of reference numerals：
1st, heat dissipating layer；2nd, reflector layer；3rd, drive block；4th, cushion chamber；5th, optical waveguide layer；6th, graphene film；7th, LED lamp bead layer；
8th, fluorescent bead；9th, crystal grain is spread.
Embodiment
The present invention is described further with reference to embodiment：
Embodiment 1
A kind of low-power LED of micro-capacitance sensor structure, including heat dissipating layer 1, reflector layer 2, drive block 3, cushion chamber 4 and LED
Lamp bead layer 7, the heat dissipating layer 1 are in conical structure, and the conical section of heat dissipating layer 1 is glued with reflector layer 2, the reflector layer 2
Upper end is provided with drive block 3, and the drive block 3 flushes with the top of heat dissipating layer 1, and the reflector layer 2 has been orderly arranged outside each buffering
Chamber 4, graphene film 6, LED lamp bead layer 7 and optical waveguide layer 5, the outward flange of optical waveguide layer 5 are connected with the outward flange of drive block 3.
Fluorescent bead 8 is provided with the optical waveguide layer 5, the fluorescent bead 8 is spherical in shape, and particle diameter is not more than 1mm.
The optical waveguide layer 5 is not more than 5mm using high acrylic lucite, the thickness of optical waveguide layer 5 thoroughly.
The outer surface of reflector layer 2 is provided with diffusion crystal grain 9, and the diffusion crystal grain 9 is not more than 1mm.
The thickness of the graphene film 6 is not more than 300 microns.
Embodiment 2
A kind of preparation method of the graphene film of the low-power LED of micro-capacitance sensor structure is as follows：
(1) preparation of graphene oxide colloidal sol：By graphene oxide be ground into particle diameter be 1-40 microns fine powder, and with it is molten
Agent is configured to the suspension that concentration is 0.5-6mg/ml, after being ultrasonically treated 10-120 minutes, removes unstable miscellaneous in suspension
Matter, obtain graphene oxide colloidal sol；
(2) preparation without support graphene oxide film：Graphene oxide colloidal sol prepared by step (1) is heated to 30-
100 DEG C, by 10-200 minutes, film is formed in colloidal sol liquid level, film is taken out from liquid level, and it is true at a temperature of 50-150 DEG C
Sky is dried, and is obtained without support graphene oxide film.
The solvent uses the one or more of ethanol, acetone or water.
The mode used in unstable impurity in the removing suspension is ion exchange, filtering, free settling or centrifugation
Separation.
One embodiment of the present of invention is the foregoing is only, is not intended to limit the present invention, it is all to use equivalent substitution or equivalent change
The technical scheme that the mode changed is obtained, all falls within protection scope of the present invention.
Claims (8)
1. a kind of low-power LED of micro-capacitance sensor structure, it is characterised in that it includes heat dissipating layer (1), reflector layer (2), drive block
(3), cushion chamber (4) and LED lamp bead layer (7), the heat dissipating layer (1) are in conical structure, and heat dissipating layer (1) conical section is tight
Reflector layer (2) is posted, reflector layer (2) upper end is provided with drive block (3), and the drive block (3) and heat dissipating layer (1) top are neat
Flat, the reflector layer (2) has been orderly arranged outside each cushion chamber (4), graphene film (6), LED lamp bead layer (7) and optical waveguide layer (5),
Optical waveguide layer (5) outward flange is connected with the outward flange of drive block (3).
A kind of 2. low-power LED of micro-capacitance sensor structure according to claim 1, it is characterised in that the optical waveguide layer (5)
Fluorescent bead (8) is inside provided with, the fluorescent bead (8) is spherical in shape, and particle diameter is not more than 1mm.
A kind of 3. low-power LED of micro-capacitance sensor structure according to claim 1, it is characterised in that the optical waveguide layer (5)
5mm is not more than using high acrylic lucite, optical waveguide layer (5) thickness thoroughly.
A kind of 4. low-power LED of micro-capacitance sensor structure according to claim 1, it is characterised in that the reflector layer (2)
Outer surface is provided with diffusion crystal grain (9), and the diffusion crystal grain (9) is not more than 1mm.
A kind of 5. low-power LED of micro-capacitance sensor structure according to claim 1, it is characterised in that the graphene film
(6) thickness is not more than 300 microns.
A kind of 6. low-power LED of micro-capacitance sensor structure according to claim 1, it is characterised in that the graphene film
Preparation method it is as follows：
(1) preparation of graphene oxide colloidal sol：Graphene oxide is ground into particle diameter and is the fine powder of 1-40 microns, and is matched somebody with somebody with solvent
The suspension that concentration is 0.5-6mg/ml is made, after being ultrasonically treated 10-120 minutes, removes the unstable impurity in suspension, obtains
To graphene oxide colloidal sol；
(2) preparation without support graphene oxide film：Graphene oxide colloidal sol prepared by step (1) is heated to 30-100
DEG C, by 10-200 minutes, film is formed in colloidal sol liquid level, film is taken out from liquid level, and the vacuum at a temperature of 50-150 DEG C
Dry, obtain without support graphene oxide film.
7. the low-power LED of a kind of micro-capacitance sensor structure according to claim 6, it is characterised in that the solvent uses
The one or more of ethanol, acetone or water.
8. the low-power LED of a kind of micro-capacitance sensor structure according to claim 6, it is characterised in that described remove suspends
The mode used in unstable impurity in liquid is ion exchange, filtering, free settling or centrifugation.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510803880.0A CN105470369B (en) | 2015-11-20 | 2015-11-20 | A kind of low-power LED of micro-capacitance sensor structure and its preparation method of graphene film |
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| CN201510803880.0A CN105470369B (en) | 2015-11-20 | 2015-11-20 | A kind of low-power LED of micro-capacitance sensor structure and its preparation method of graphene film |
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| CN105470369A CN105470369A (en) | 2016-04-06 |
| CN105470369B true CN105470369B (en) | 2018-02-27 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102138230A (en) * | 2008-09-01 | 2011-07-27 | 欧司朗光电半导体有限公司 | Optoelectronic component |
| CN102694093A (en) * | 2012-06-19 | 2012-09-26 | 中国科学院半导体研究所 | Method for manufacturing micro-nano pyramid gallium nitride based light-emitting diode array with vertical structure |
| CN102903838A (en) * | 2012-07-10 | 2013-01-30 | 贵州大学 | Packaged LED light source with radiating structure and production method thereof |
| TW201445082A (en) * | 2013-05-29 | 2014-12-01 | Genesis Photonics Inc | Light emitting device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201032350A (en) * | 2009-02-20 | 2010-09-01 | Univ Nat Central | A manufacturing method of LED |
| TWI510741B (en) * | 2013-05-27 | 2015-12-01 | Genesis Photonics Inc | Light emitting device |
-
2015
- 2015-11-20 CN CN201510803880.0A patent/CN105470369B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102138230A (en) * | 2008-09-01 | 2011-07-27 | 欧司朗光电半导体有限公司 | Optoelectronic component |
| CN102694093A (en) * | 2012-06-19 | 2012-09-26 | 中国科学院半导体研究所 | Method for manufacturing micro-nano pyramid gallium nitride based light-emitting diode array with vertical structure |
| CN102903838A (en) * | 2012-07-10 | 2013-01-30 | 贵州大学 | Packaged LED light source with radiating structure and production method thereof |
| TW201445082A (en) * | 2013-05-29 | 2014-12-01 | Genesis Photonics Inc | Light emitting device |
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