CN105449072A - Light emitting diode element - Google Patents
Light emitting diode element Download PDFInfo
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- CN105449072A CN105449072A CN201610016968.2A CN201610016968A CN105449072A CN 105449072 A CN105449072 A CN 105449072A CN 201610016968 A CN201610016968 A CN 201610016968A CN 105449072 A CN105449072 A CN 105449072A
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- type doped
- doped layer
- layer
- emitting diode
- light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Abstract
The invention provides a light emitting diode element. The light emitting diode element comprises a first-type doping layer; a luminescent layer configured on the first-type doping layer; a second-type doping layer configured on the luminescent layer; at least one trench portion which penetrates the second-type doping layer and the luminescent layer and exposes a part of the first-type doping layer; an insulation layer which is configured on a part of the second-type doping layer and extends to the side wall of the at least one trench portion; a first contact which is configured in the trench portion and is electrically connected with the first-type doping layer; and a second contact which is configured on the second-type doping layer and is electrically connected with the second-type doping layer, wherein the length direction of the trench portion extends towards two opposite side edges of the light emitting diode element, and the length of the trench portion is greater than half of the distance between the two side edges. The light emitting diode element provided by the invention has high luminescence efficiency.
Description
The present invention is the divisional application that the application number proposed on December 20th, 2011 is 201110443390.6, denomination of invention is the application for a patent for invention of " light-emitting diode and crystal-coated light-emitting diodes encapsulation ".
Technical field
The present invention relates to a kind of light-emitting device, and particularly about a kind of light-emitting diode and crystal-coated light-emitting diodes potted element.
Background technology
The light-emitting diode (LED) formed due to iii-v element compound semi-conducting material is a kind of light-emitting component of wide energy gap (bandgap), its emitted light is from infrared light until ultraviolet light, and contains the wave band of all visible rays.Therefore, in recent years, along with the fast development of high-brightness GaN (GaN) indigo plant/green light LED, all-colour LED display, white light LEDs and LED traffic sign etc. are able to practical, and the application technology of other various LED is also more universal.
The basic structure of general LED element comprises P type and the N-type doping semiconductor layer of iii-v element compound and the active layers of aforementioned two kinds of doped semiconductor interlayers.Wherein, the luminous efficiency height of LED element depends on the quantum efficiency of active layers and the light extraction efficiency (lightextractionefficiency) of this LED element.Therefore increase quantum efficiency and light extraction efficiency can improve LED element luminous efficiency, the method wherein increasing quantum efficiency mainly improves crystalloid amount (epitaxyquality) of heap of stone and the structural design thereof of luminescent layer, and the key increasing light extraction efficiency is then the energy loss that the light that minimizing luminescent layer sends causes in LED internal reflection.
Because the positive and negative electrode of current general LED element is placed in the same face, but positive and negative electrode meeting reflection ray, therefore, be familiar with LED field person and then propose a kind of crystal covering type LED encapsulation structure, by positive and negative electrode in the face of opaque substrate, and utilize a reflector, light is sent towards tossing about of electrode.Another benefit of employing crystal covering type LED encapsulation structure is, suitable SMD LED surface-mount device LED (the surfacemount if arrange in pairs or groups, general abbreviation surmount) substrate, such as: adopt silicon substrate as SMD LED surface-mount device LED substrate, then will contribute to LED element heat radiation, particularly under high current operating environment.Thus, the light extraction efficiency not only contributing to LED element is improved, and LED element luminescent layer also can not be subject to the overheated impact of LED element and reduce quantum efficiency.
But the above crystal covering type LED encapsulation structure, still the problem of CURRENT DISTRIBUTION inequality in this N-type doped layer inevitable or P type doped layer, so causes light-emitting diode electric property to decline, and has influence on luminous efficacy.
In view of this, the present invention proposes a kind of light-emitting diode, effectively can solve the problem of CURRENT DISTRIBUTION inequality and element over-temperature, promote to make the luminous efficiency of light-emitting diode.
Summary of the invention
Main purpose of the present invention is to provide a kind of light-emitting diode, and it has high-luminous-efficiency.
Another object of the present invention is to provide a kind of crystal-coated light-emitting diodes potted element, and utilize this light-emitting diode and a base plate for packaging to be electrically connected, improving luminous efficiency solves heat dissipation problem simultaneously by this.
Technical scheme of the present invention: one embodiment of the invention proposes a kind of light-emitting diode, comprises a device substrate, one first type doped layer, a luminescent layer, a Second-Type doped layer, a plurality of first ditch portion, an insulating barrier, one first contact and one second contact.This first type doped layer is configured on this device substrate, and this luminescent layer is configured on this first type doped layer, and this Second-Type doped layer is configured on this luminescent layer.These the first ditch portions run through this Second-Type doped layer and this luminescent layer and this first type doped layer surface of exposed parts, and wherein, these at least one one end, the first ditch portion extend also through to this Second-Type doped layer and this luminescent layer edge.This insulating barrier be configured at part this Second-Type doped layer on and extend to these the first ditch portion sidewalls.This first joint configuration is in these the first ditch portions and be electrically connected with this first type doped layer.This second joint configuration on this Second-Type doped layer with its electric connection.Above-mentioned insulating barrier is in order to avoid the first contact and the short circuit of Second-Type doped layer.
In an embodiment of the present invention, this light-emitting diode above-mentioned comprises a reflector further, and it is arranged on this Second-Type doped layer.
In an embodiment of the present invention, this reflector areal extent above-mentioned is that this Second-Type doped layer area is more than percent 50.
In an embodiment of the present invention, these the first ditch portion gross areas above-mentioned are this first type doped layer area 5 to 15 percent.
In an embodiment of the present invention, these the first ditch portions above-mentioned are linear pattern ditch portion.
In an embodiment of the present invention, these the first ditch portions above-mentioned are shaped form ditch portion.
In an embodiment of the present invention, these the first ditch portions above-mentioned at least the two be parallel to each other.
In an embodiment of the present invention, the two end air line distance scopes out of the ordinary in these the first ditch portions above-mentioned are 0.5L
lto L
l, wherein, L
lfor this device substrate longer side length of side.
In an embodiment of the present invention, the respective widths scope in these the first ditch portions above-mentioned is 10 to 100 microns.
In an embodiment of the present invention, this light-emitting diode above-mentioned comprises a plurality of second ditch portion further, and it is connected with these the first ditch portion other ends respectively, wherein, is different from these the first ditch portion bearing of trends with these the second ditch portion bearing of trends.
In an embodiment of the present invention, wherein these the second ditch portion length ranges out of the ordinary are L
l/ 5n to L
l/ n, wherein, L
lfor this device substrate longer side length of side, n is the total quantity in these the first ditch portions.
In an embodiment of the present invention, the total quantity in these the second ditch portions above-mentioned is xn, and wherein n is the total quantity in these the first ditch portions, and x is positive integer.
In an embodiment of the present invention, the total quantity in these the second ditch portions above-mentioned is identical with the total quantity in these the first ditch portions.
In an embodiment of the present invention, these the first ditch portion other ends above-mentioned extend to this light-emitting diode center.
In an embodiment of the present invention, these centers, the second ditch portion above-mentioned are connected with these the first ditch portions.
In an embodiment of the present invention, these the first ditch portions above-mentioned and these the second ditch portions are linear pattern ditch portion.
In an embodiment of the present invention, these the first ditch portions above-mentioned are vertical connections with these the second ditch portions.
The beneficial effect that the present invention has: based on above-mentioned, this light-emitting diode of the embodiment of the present invention utilizes these the first ditch portions extending to this Second-Type doped layer and this luminescent layer edge, make electric current can be distributed in this first type doped layer fully through this first contact, improve the phenomenon of electric current clustering by this, reach the effect of balanced current distribution.The embodiment of the present invention is worth it is specifically intended that can connect these the first ditch portions further by these the second ditch portions, to promote the current dissipation in this Second-Type doped layer.In more detail, because the bearing of trend in these the second ditch portions is different from the bearing of trend in these the first ditch portions, therefore, when electric current transmits in this Second-Type doped layer, be subject to the obstruction in these the second ditch portions, electric current is forced toward horizontal proliferation, across continuing toward longitudinal diffusion behind these the second ditch portions, to make electric current also can reach the effect of uniform distribution at this Second-Type doped layer.
Another embodiment of the present invention proposes a kind of crystal-coated light-emitting diodes potted element, it comprises a base plate for packaging further, above-mentioned light-emitting diode and this base plate for packaging are electrically connected, through the heat dissipation characteristics of this base plate for packaging, improving luminous efficiency also solves heat dissipation problem simultaneously.
Accompanying drawing explanation
Fig. 1 is the top view of one embodiment of the invention semiconductor layer and device substrate;
Fig. 2 is the cutaway view of the AA' hatching of Fig. 1;
Fig. 3 is the top view of another embodiment of the present invention semiconductor layer and device substrate;
Fig. 4 is the top view of another embodiment of the present invention semiconductor layer and device substrate;
Fig. 5 is the top view of another embodiment of the present invention semiconductor layer and device substrate;
Fig. 6 is the top view of another embodiment of the present invention semiconductor layer and device substrate;
Fig. 7 is the top view of another embodiment of the present invention semiconductor layer and device substrate;
Fig. 8 is the top view of another embodiment of the present invention semiconductor layer and device substrate;
Fig. 9 is the top view that the present invention the 1st embodiment is complete;
Figure 10 is the cutaway view of the BB' hatching of Fig. 9;
Figure 11 is the cutaway view of the CC' hatching of Fig. 9;
Figure 12 is the cutaway view of the DD' hatching of Fig. 9;
Figure 13 is the cutaway view of another embodiment of the present invention; And
Figure 14 is the cutaway view of another embodiment of the present invention.
Description of reference numerals
1 light-emitting diode 1 ' crystal-coated light-emitting diodes potted element
2 semiconductor layer 10 device substrates
11 first type doped layer 12 luminescent layers
13 Second-Type doped layer 14 first ditch portions
15 second reflector, ditch portions 16
17 insulating barrier 18 first contacts
19 second contact 20 base plate for packaging
21 eutectic structure 22 eutectic structures
23 projection 24 projections
The two end beeline L in L1 first ditch portion
lthe device substrate longer side length of side
The width in d first ditch portion
Embodiment
For making to have a better understanding and awareness architectural feature of the present invention and effect of reaching, coordinating detailed description in order to preferred embodiment and accompanying drawing, being described as follows:
Refer to Fig. 1 and Fig. 2, it is the cutaway view of the AA ' hatching of the semiconductor layer of one embodiment of the invention and the top view of device substrate and Fig. 1.As shown in Figure 1, the top view of the present embodiment for simplicity, only show semiconductor layer 2 (refer to Fig. 2, it comprises the first type doped layer 11, luminescent layer 12, Second-Type doped layer 13), and do not show insulating barrier, reflector, the first contact and the second contact.Semiconductor layer 2 is arranged on a device substrate 10, and by the surface of a plurality of first ditch portion 14 exposed parts first type doped layer 11, be electrically connected for the first contact.
As shown in Figure 2, device substrate 10 forms one first type doped layer 11.This first type doped layer 11 forms a luminescent layer 12, and form a Second-Type doped layer 13 on this luminescent layer 12.In this light-emitting diode, a plurality of first ditch portion 14 this Second-Type doped layer 13 through and luminescent layer 12, simultaneously by the surface of these the first ditch portion 14 these the first type doped layers 11 of exposed parts, the first type doped layer 11 is electrically connected through these the first ditch portions 14 for the first contact 18 (as shown in Figure 9), make electric current can be uniformly distributed in the first type doped layer 11, to promote the CURRENT DISTRIBUTION of luminescent layer 12 further, and improve uniformity of luminance, wherein, these the first ditch portions 14 are formed by etching Second-Type doped layer 13 and luminescent layer 12, such as: first after gold-tinted processing procedure again with reactive ion etching luminescent layer 12 and Second-Type doped layer 13, or pass through light-emitting layer grows 12 and Second-Type doped layer 13 selectively.
Refer to Fig. 3-Fig. 5, it is the semiconductor layer of another embodiment of the present invention and the top view of device substrate.Wherein the 2nd, the 3rd and the 4th embodiment of Fig. 3, Fig. 4 and Fig. 5 difference semiconductor layer 2 of the present invention, in an embodiment, the first ditch portion 14 is not limited to any shape, and such as these the first ditch portions 14 can be linear pattern ditch portion or shaped form ditch portion.As shown in Figure 3, one end of at least one in these the first ditch portions 14 extends to the edge of this luminescent layer 12 and this Second-Type doped layer 13, and consults Fig. 1 again, and preferably is the edge that the one end in all first ditch portions 14 all extends to this semiconductor layer 2.As shown in Figure 4, the profile in these the first ditch portions 14 is curve-like, to increase the contact area of the first contact and the first type doped layer 11, improves the magnitude of current of electric current by luminescent layer 12 by this, and improves luminous efficiency.In addition, as shown in Figure 5, in order to be distributed in the first type doped layer 11 with making uniform current and effectively utilize chip area, preferably, these the first ditch portions 14 at least the two for being parallel to each other, more preferably, as shown in Figure 1, all first ditch portions 14 are parallel mutually.
Current spreading in order to what maintain that larger light-emitting area takes into account in the first type doped layer 11 simultaneously, wherein the two end beeline L1 in these the first ditch portions 14 are preferably 0.5L
lto L
l, wherein, L
lfor the device substrate 10 longer side length of side.Moreover, width d (it is as the width d in the first ditch portion 14 in Fig. 1, Fig. 3, Fig. 4 and Fig. 5) due to the first ditch portion 14 is wide can produce the problems such as the first contact extinction or shading, and the problem that the meticulous process rate that can derive light-emitting diode of the width d in the first ditch portion 14 is low, therefore the respective widths scope in these the first ditch portions 14 is preferably between 10 to 100 microns.
Refer to Fig. 6-Fig. 8, it is the semiconductor layer of another embodiment of the present invention and the top view of device substrate.As Figure 6-Figure 8, it is the 5th, the 6th and the 7th embodiment of semiconductor layer 2 of the present invention.5th, the 6th and the 7th embodiment is from the 1st the different of embodiment, 5th, a plurality of second ditch portion 15 is comprised further in the 6th and the 7th embodiment, it is connected with these the first ditch portions 14 respectively, the bearing of trend in these the second ditch portions 15 above-mentioned is different from the bearing of trend in these the first ditch portions 14, and by the different bearing of trends in the second ditch portion 15 to increase current delivery horizontal between the first contact 18 (as shown in Figure 9) and the second contact 19 (as shown in Figure 9).
In order to effectively reach horizontal current delivery, the length range out of the ordinary in above-mentioned second ditch portion 15 is preferably L
l/ 5n to L
l/ n, wherein, L
lfor the device substrate 10 longer side length of side, n is the total quantity in these the first ditch portions 14.The total quantity not specific restriction in these the second ditch portions 15, but for reaching uniform electric current cross direction profiles, preferably, the total quantity in these the second ditch portions 15 is xn, wherein, x be greater than 0 positive integer, n is the total quantity in the first ditch portion 14, and namely the total quantity in these the second ditch portions 15 can be greater than the total quantity in these the first ditch portions 14.More preferably, the total quantity in these the second ditch portions 15 is n, take into account uniform electric current cross direction profiles by this and reduce contact Problem of Shading, in other words, the total quantity in these the first ditch portions 14 of the 5th, the 6th and the 7th embodiment is equal to the total quantity in these the second ditch portions 15.
As shown in Figure 6, these the first ditch portions 14 are different from the bearing of trend in these the second ditch portions 15, and these the first ditch portions 14 and these the second ditch portions 15 are linear pattern ditch portion and vertical connection respectively, and these the second ditch portions 15 are the stage casings being connected to these the first ditch portions 14, to form the ditch portion of cross profile, therefore the exposed area that the first type doped layer 11 is longitudinal and horizontal is increased, these the first ditch portions 14 are made to effectively utilize chip area, to increase, electric current is longitudinal in the electric current of the first doped layer 11, cross direction profiles, and improves luminous efficiency.
As shown in Figs. 7-8, in order to make the electric current cross direction profiles of the immediate vicinity of light-emitting diode 1 better, therefore, these the second ditch portions 15 are connected to the one end at the contiguous light-emitting diode center in these the first ditch portions 14, that is the one end in these the first ditch portions 14 extends to the edge of semiconductor layer 2, and the other end in these the first ditch portions 14 extends to the center of light-emitting diode 1, and the other end in these the first ditch portions 14 connects these the second ditch portions 15, preferably, the center in these the second ditch portions 15 is connected with these the first ditch portions 14.In addition, in order to promote the yield of processing procedure, these the first ditch portions 14 and the second ditch portion 15 are all set to linear pattern ditch portion.More preferably, these the first ditch portions 14 are vertical connections (as shown in Figure 7) with these the second ditch portions 15, to supply to arrange the first contact 18 (as shown in Figure 9) by these the first ditch portions 14 and these the second ditch portions 15, and increase the exposed area on the surface of part first type doped layer 11, for increasing the area that the first contact 18 (as shown in Figure 9) is electrically connected, to improve luminous efficiency.
Refer to Fig. 9 to Figure 12, it is the cutaway view of top view that the 1st embodiment of the present invention is complete and Fig. 9, and wherein Figure 10 to Figure 12 is respectively the cutaway view of BB', CC of Fig. 9 ' and DD' hatching.As shown in the figure, light-emitting diode 1 of the present invention comprises device substrate 10,1 first type doped layer 11, luminescent layer 12, Second-Type doped layer 13, insulating barrier 17,1 first contact 18 and one second contact 19.In addition, light-emitting diode 1 of the present invention comprises reflector 16 further.
The first type doped layer 11 of the present embodiment is configured on device substrate 10, luminescent layer 12 is configured on the first type doped layer 11, Second-Type doped layer 13 is configured on luminescent layer 12, the light-emitting diode 1 of the present embodiment arranges plural first ditch portion 14, and these the first ditch portions 14 through Second-Type doped layer 13 and luminescent layer 12 respectively, and the surface of these the first ditch portions 14 difference exposed parts first type doped layer 11, moreover, the one end in these the first ditch portions 14 further extends and through to Second-Type doped layer 13 and luminescent layer 12 edge, in addition, the present invention more can arrange the first ditch portion 14 of corresponding number according to user demand.Reflector 16 is arranged on Second-Type doped layer 13, and the areal extent in reflector 16 is more than percent 50 of this Second-Type doped layer 13 area, insulating barrier 17 is arranged on partially reflecting layer 16, and insulating barrier 17 extends to the sidewall in the first ditch portion 14, namely extend to the sidewall of luminescent layer 12 and Second-Type doped layer 13.First contact 18 of the present embodiment is configured to establish on the first type doped layer 11 to connect in these the first ditch portions 14, and to be electrically connected, the second contact 19 to be arranged on reflector 16 and to be electrically connected with Second-Type doped layer 13.Wherein, the area in the first ditch portion 14 is 5 to 15 percent of this first type doped layer 11 area.Because the first contact 18 to extend to the border of semiconductor layer 2 by the one end in the first ditch portion 14, the dispersiveness of electric current at the first type doped layer 11 can be increased.
Refer to Figure 13 to Figure 14, it is the cutaway view of another embodiment of the present invention.As shown in Figure 13 to Figure 14, the structural representation of light-emitting diode 1 after chip package of Figure 12, that is the crystal-coated light-emitting diodes potted element 1 ' of light-emitting diode of the present invention 1 gained after chip package.
As shown in figure 13, the light-emitting diode 1 of Figure 12 is overlying on a base plate for packaging 20, and the first contact 18 and the second contact 19 are with eutectic structure 21,22, and are electrically connected with base plate for packaging 20 respectively; As shown in figure 14, the light-emitting diode 1 of Figure 12 is also overlying on a base plate for packaging 20, and the first contact 18 and the second contact 19 are with projection 23,24, and is electrically connected with base plate for packaging 20 respectively.Because light-emitting diode 1 is through being overlying on after on base plate for packaging 20, reflector 16 is positioned at the below of luminescent layer 12 and towards base plate for packaging 20, so namely the light that luminescent layer 12 sends downwards can reflect via reflector 16, and is sent by device substrate 10.
The technology that a plurality of first ditch portion 14 of the present invention like this extends to semiconductor layer 2 edge more can be applicable to the technical field of crystal-coated light-emitting diodes, therefore the present invention also can provide a crystal-coated light-emitting diodes potted element 1 ', and this crystal-coated light-emitting diodes potted element 1 ' can increase homogeneous current distribution degree and solve heat dissipation problem simultaneously.
In addition, the material of the device substrate 10 of the present embodiment is for being selected from Al
2o
3, the transparency carrier such as SiC, GaAs, GaN, AlN, GaP, Si, ZnO and MnO or glass.The first type doped layer 11 of the present embodiment can distinguish n type gallium nitride semiconductor layer and P type gallium nitride semiconductor layers with Second-Type doped layer 13, or be respectively P type gallium nitride semiconductor layers and n type gallium nitride semiconductor layer, namely the first type doped layer 11 and Second-Type doped layer 13 are the gallium nitride semiconductor layers of different doping.The luminescent layer 12 of the present embodiment can be multiple quantum trap (MQW) structure.The material of the insulating barrier 17 of the present embodiment is the isolation material that light penetration is high, and it comprises oxide, nitride or nitrogen oxide, and preferably insulating barrier 17 adopts silica, silicon nitride or silicon oxynitride.The better metal adopting reflectivity good of material in the reflector 16 of the present embodiment, it comprises silver, aluminium, titanium, gold, platinum, palladium or above-mentioned combination.The material of the first contact 18 and the second contact 19 is electric conducting material, it comprises conductive metal material and non-metallic conducting material, it is preferably conductive metal material, particularly gold, titanium, nickel, aluminium, chromium, platinum or above-mentioned combination, and this electric conducting material is with single structure or multi-layered conductive structure storehouse.The base plate for packaging 20 of the present embodiment is the material of tool thermal diffusivity or high heat capacity, and such as but not limited to a silicon substrate, sapphire substrate, ceramic substrate, if consider the matching degree with light-emitting diode 1 further, the best is sapphire substrate.The present embodiment eutectic structure 21,22 is an eutectic metal, such as gold-tin alloy, silver-colored ashbury metal, gold-germanium alloy etc., and the projection 23,24 of the present embodiment is the metal materials such as gold, nickel or scolding tin.The above, light-emitting diode 1 of the present invention can be electrically connected with base plate for packaging 20 further, by the heat dissipation characteristics of base plate for packaging 20, solves the problems of excessive heat of light-emitting diode 1.
In sum, the present invention is a kind of light-emitting diode, it is by the first through luminescent layer in ditch portion and Second-Type doped layer and exposed parts first type doped layer, for arranging and being electrically connected the first contact, and improve the dispersiveness of electric current in the first type doped layer, moreover, the different bearing of trend designs in the second ditch portion can be utilized further, to increase the distribution of electric current in Second-Type doped layer, and the homogeneous current distribution degree of Integral luminous diode element is improved, thus improved by above-mentioned two and improve the luminous efficacy of light-emitting diode.Finally, combined by light-emitting diode of the present invention and a base plate for packaging, the heat dissipation problem of element can be solved again.
In sum, be only preferred embodiment of the present invention, not be used for limiting scope of the invention process, all equalizations of doing according to shape, structure, feature and the spirit described in the claims in the present invention scope change and modify, and all should be included in right of the present invention.
Claims (10)
1. a light-emitting diode, comprises:
One first type doped layer;
One luminescent layer, is configured on described first type doped layer;
One Second-Type doped layer, is configured on described luminescent layer;
At least one ditch portion, the first type doped layer described in its through described Second-Type doped layer and described luminescent layer exposed parts;
One insulating barrier, to be configured on part described Second-Type doped layer and to extend to the sidewall in described at least one ditch portion;
One first contact, to be configured in described ditch portion and to be electrically connected with described first type doped layer; And
One second contact, to be configured on described Second-Type doped layer and to be electrically connected with described Second-Type doped layer,
Wherein, the length direction in described ditch portion extends to its relative dual side-edge of described light-emitting diode, and the length in described ditch portion is greater than the half of the distance between relative described dual side-edge.
2. light-emitting diode as claimed in claim 1, wherein said light-emitting diode also comprises a reflector, and described reflector is configured on described Second-Type doped layer.
3. a light-emitting diode, comprises:
One first type doped layer;
One luminescent layer, is configured on described first type doped layer;
One Second-Type doped layer, is configured on described luminescent layer;
At least one ditch portion, the first type doped layer described in its through described Second-Type doped layer and described luminescent layer exposed parts;
One insulating barrier, to be configured on part described Second-Type doped layer and to extend to the sidewall in described at least one ditch portion;
One first contact, to be configured in described ditch portion and to be electrically connected with described first type doped layer; And
One second contact, to be configured on described Second-Type doped layer and to be electrically connected with described Second-Type doped layer,
Wherein, the length direction in described ditch portion extends to its relative dual side-edge of described light-emitting diode, and described ditch portion is across on the center line between relative described dual side-edge.
4. light-emitting diode as claimed in claim 3, wherein said light-emitting diode also comprises a reflector, is configured on described Second-Type doped layer.
5. a light-emitting diode, comprises:
One first type doped layer;
One luminescent layer, is configured on described first type doped layer;
One Second-Type doped layer, is configured on described luminescent layer;
At least one ditch portion, the first type doped layer described in its through described Second-Type doped layer and described luminescent layer exposed parts;
One insulating barrier, to be configured on part described Second-Type doped layer and to extend to the sidewall in described at least one ditch portion;
One first contact, comprise vertical articulamentum and a level connection joint layer, described vertical articulamentum is configured in described ditch portion, described level connection joint layer is configured on the described insulating barrier of part and is electrically connected through described vertical articulamentum and described first type doped layer, and wherein said level connection joint layer covers the end face of described vertical articulamentum at least completely; And
One second contact, to be configured on described Second-Type doped layer and to be electrically connected with described Second-Type doped layer.
6. light-emitting diode as claimed in claim 5, wherein said light-emitting diode also comprises a reflector, is configured on described Second-Type doped layer.
7. a light-emitting diode, comprises:
One first type doped layer;
One luminescent layer, is configured on described first type doped layer;
One Second-Type doped layer, is configured on described luminescent layer;
At least one ditch portion, the first type doped layer described in its through described Second-Type doped layer and described luminescent layer exposed parts;
One insulating barrier, to be configured on part described Second-Type doped layer and to extend to the sidewall in described at least one ditch portion;
One first contact, to be configured in described ditch portion and to be electrically connected with described first type doped layer; And
One second contact, to be configured on described Second-Type doped layer and to be electrically connected with described Second-Type doped layer,
Wherein, the gross area of described at least one ditch portion in described Second-Type doped layer is described Second-Type doped layer area 5 to 15 percent.
8. light-emitting diode as claimed in claim 7, wherein said light-emitting diode also comprises a reflector, is configured on described Second-Type doped layer.
9. a light-emitting diode, comprises:
One first type doped layer;
One luminescent layer, is configured on described first type doped layer;
One Second-Type doped layer, is configured on described luminescent layer;
At least one ditch portion, the first type doped layer described in its through described Second-Type doped layer and described luminescent layer exposed parts;
One insulating barrier, to be configured on part described Second-Type doped layer and to extend to the sidewall in described at least one ditch portion;
One first contact, to be configured in described ditch portion and to be electrically connected with described first type doped layer, and described first contact has one first contact surface; And
One second contact, to be configured on described Second-Type doped layer and to be electrically connected with described Second-Type doped layer, and described second contact has one second contact surface,
The area on wherein said first contact surface is greater than the area on described second contact surface.
10. light-emitting diode as claimed in claim 9, wherein said light-emitting diode also comprises a reflector, is configured on described Second-Type doped layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110443390.6A CN103178182B (en) | 2011-12-20 | 2011-12-20 | Light-emitting diode and crystal-coated light-emitting diodes potted element |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201110443390.6A Division CN103178182B (en) | 2011-12-20 | 2011-12-20 | Light-emitting diode and crystal-coated light-emitting diodes potted element |
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| CN105449072A true CN105449072A (en) | 2016-03-30 |
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| CN201110443390.6A Expired - Fee Related CN103178182B (en) | 2011-12-20 | 2011-12-20 | Light-emitting diode and crystal-coated light-emitting diodes potted element |
| CN201610016968.2A Pending CN105449072A (en) | 2011-12-20 | 2011-12-20 | Light emitting diode element |
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| DE102016109308B4 (en) | 2016-05-20 | 2024-01-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | RADIATION EMITTING COMPONENT |
| TWI790984B (en) * | 2017-01-26 | 2023-01-21 | 晶元光電股份有限公司 | Light-emitting device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201015695A (en) * | 2008-10-07 | 2010-04-16 | Formosa Epitaxy Inc | Alternating current light-emitting device capable of increasing light extraction efficiency, and manufacturing method thereof |
| US20100203661A1 (en) * | 2007-06-29 | 2010-08-12 | Showa Denko K.K. | Method for producing light-emitting diode |
| CN101807657A (en) * | 2009-02-18 | 2010-08-18 | Lg伊诺特有限公司 | Light emitting device package and lighting system including the same |
| CN101867002A (en) * | 2010-05-27 | 2010-10-20 | 常州美镓伟业光电科技有限公司 | Novel semiconductor light-emitting diode |
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2011
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100203661A1 (en) * | 2007-06-29 | 2010-08-12 | Showa Denko K.K. | Method for producing light-emitting diode |
| TW201015695A (en) * | 2008-10-07 | 2010-04-16 | Formosa Epitaxy Inc | Alternating current light-emitting device capable of increasing light extraction efficiency, and manufacturing method thereof |
| CN101807657A (en) * | 2009-02-18 | 2010-08-18 | Lg伊诺特有限公司 | Light emitting device package and lighting system including the same |
| CN101867002A (en) * | 2010-05-27 | 2010-10-20 | 常州美镓伟业光电科技有限公司 | Novel semiconductor light-emitting diode |
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| CN103178182A (en) | 2013-06-26 |
| CN103178182B (en) | 2016-02-03 |
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