CN105448787A - Transmission device and semiconductor processing equipment - Google Patents
Transmission device and semiconductor processing equipment Download PDFInfo
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- CN105448787A CN105448787A CN201410245723.8A CN201410245723A CN105448787A CN 105448787 A CN105448787 A CN 105448787A CN 201410245723 A CN201410245723 A CN 201410245723A CN 105448787 A CN105448787 A CN 105448787A
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- wafer
- thimble
- electrostatic chuck
- transmitting device
- manipulator
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Abstract
The invention provides a transmission device and semiconductor processing equipment. The transmission device is used for assembling or disassembling a wafer on a static chuck, and comprises a centre lifting mechanism which comprises a plurality of centres and a lifting driver, wherein each centre passes through the upper and lower surfaces of the static chuck. The lifting driver is used for driving each centre to rise or fall in the static chuck, so as to enable the wafer on the static chuck to be jacked up or enable the wafer on the centres to be placed on the static chuck. The plurality of centres are arranged to be corresponding to the edge region of the static chuck. There are first preset gaps between the plurality of centres and the edge of the static chuck in a radial direction of the static chuck. The transmission device can reduce the probability that the wafer is caused to be inclined because of wafer adhering to great degree, so the transmission device can protect the wafer from being deflected or smashed, can improve the stability and reduces the requirements for the absorption capability of the static chuck.
Description
Technical field
The invention belongs to semiconductor equipment and manufacture field, be specifically related to a kind of transmitting device and semiconductor processing equipment.
Background technology
In the manufacturing technology field of chip, inductively coupled plasma (ICP) etching apparatus usually adopts electrostatic chuck fixed wafer and adopts transmitting device to realize electrostatic chuck loading or unloading wafer.Particularly, before technical process, adopt transmitting device to electrostatic chuck loaded with wafers; In technical process, electrostatic chuck adopts the mode fixed wafer of Electrostatic Absorption; After technique completes, electrostatic chuck carries out Electro-static Driven Comb, so that transmitting device is to electrostatic chuck unloading wafer.
Fig. 1 is the structural representation of existing transmitting device.Fig. 2 is the cutaway view of the electrostatic chuck in Fig. 1.See also Fig. 1 and Fig. 2, this transmitting device comprises manipulator 10 and thimble elevating mechanism.Wherein, thimble elevating mechanism comprises thimble 12 and lift actuator (not shown), the quantity of thimble 12 is four, each thimble 12 runs through its upper and lower surface in the central area of electrostatic chuck 11, lift actuator is elevated in electrostatic chuck 11 for driving thimble 12, being positioned at the wafer jack-up of electrostatic chuck 11 upper surface or putting down; Manipulator 10 adopts " U " type structure as shown in Figure 1, and when moving to above electrostatic chuck 11 to make manipulator 10, thimble 12 still can be elevated in electrostatic chuck 11, and thimble 12 and manipulator 10 not contact-impact.
Describe in detail below in conjunction with Fig. 3 and adopt the course of work of above-mentioned transmitting device realization to electrostatic chuck 11 unloading wafer.Particularly, comprise the following steps: initial condition is as schemed shown in a in Fig. 3; Step S1, as schemed shown in b in Fig. 3, lift actuator drives thimble 12 to rise, and being positioned at wafer S jack-up to the first predeterminated position on electrostatic chuck 11, the first predeterminated position will be for scheming the wafer S position shown in b in Fig. 3; Step S2, as schemed shown in c in Fig. 3, unloaded manipulator 10 transfers to the second predeterminated position, and to make manipulator 10 between electrostatic chuck 11 and wafer S, the second predeterminated position is for scheming manipulator 10 position shown in c in Fig. 3; Step S3, as schemed shown in d in Fig. 3, lift actuator drives thimble 12 to drop to the below of the second predeterminated position, is positioned on manipulator 10 to make the wafer S be positioned on thimble 12; Step S4, wafer transmission to the film magazine being used for placing wafer S, is completed the process to electrostatic chuck 11 unloading wafer, as schemed shown in e in Fig. 3 by the manipulator 10 carrying wafer S.
Usually the material adopted due to traditional wafer is silicon (Si), it is less demanding to the adsorption capacity of electrostatic chuck 11, making Electrostatic Absorption and release all than being easier to, thus in the process to electrostatic chuck 11 unloading wafer, substantially can not there is the halfway problem of Electro-static Driven Comb.But, in actual applications, along with the continuous introducing of new technology, the material category that wafer adopts gets more and more, such as, carborundum (SiC), silicon dioxide (SiO2) etc., its adsorption capacity to electrostatic chuck 11 requires very high, make Electrostatic Absorption and discharge all more difficult, thus in the process of unloading wafer, easily produce the halfway problem of Electro-static Driven Comb, thus easily bonding die phenomenon occurs, as shown in Figure 4, thimble 12 in the center of wafer by wafer jack-up time, the part edge region of wafer is still connected with electrostatic chuck.
Therefore, above-mentioned transmitting device is adopted often to there is following problem in actual applications: because thimble is arranged on the central area of electrostatic chuck, thimble power is upwards applied to the central area of wafer, and bonding die generally occurs in the fringe region of wafer, bonding die produces the fringe region that downward power is applied to wafer, this can make to cause wafer to offset original position while bonding die release, and skew is larger, thus wafer run-off the straight is caused, as shown in Figure 5, Waffer edge is overlapped on the edge of electrostatic chuck, thus cause unloading wafer failure, even easily wafer is hit in robotic transfer to time between wafer and electrostatic chuck and partially even crash, and then cause transmission stability poor, for this reason, by improving to the requirement of electrostatic chuck adsorption capacity to avoid bonding die occurs, but this can fixedly having an impact to wafer.
Summary of the invention
The present invention is intended at least to solve one of technical problem existed in prior art, propose a kind of transmitting device and semiconductor processing equipment, the probability causing wafer inclination due to bonding die can be reduced to a great extent, thus wafer can be avoided to be hit partially or crash, thus the stability that can improve transmitting device and the requirement reduced electrostatic chuck adsorption capacity.
For one of solving the problem, the invention provides a kind of transmitting device, for realizing electrostatic disk loaded with wafers or unloading wafer, comprise thimble elevating mechanism, described thimble elevating mechanism comprises multiple thimble and lift actuator, each described thimble runs through the upper and lower surface of described electrostatic chuck, described lift actuator is elevated in described electrostatic chuck for driving each described thimble, so that the wafer be positioned on multiple described thimble is maybe placed on described electrostatic chuck by the wafer jack-up be positioned on described electrostatic chuck, the fringe region of the corresponding described electrostatic chuck of described multiple thimble is arranged, and, the first preset pitch is there is in the edge of each described thimble and described electrostatic chuck in described electrostatic chuck radial direction.
Wherein, described multiple thimble along described electrostatic chuck circumferential interval and evenly arrange.
Wherein, the span of described first preset pitch is at 2 ~ 3cm.
Wherein, the span of the quantity of described thimble is at 6 ~ 10.
Wherein, also comprise manipulator, described manipulator is used for carrying and transmits described wafer, when loading described wafer, described manipulator, by the predeterminated position above described wafer transmission to described electrostatic chuck, will be positioned at wafer jack-up on described manipulator to make multiple described thimble rising and be positioned on multiple described thimble; When unloading described wafer, described robotic transfer, to the predeterminated position above described electrostatic chuck, is positioned on described manipulator to make general who has surrendered's wafer be positioned on multiple described thimble under multiple described thimble decline.
Wherein, when described robotic transfer is to described predeterminated position above described electrostatic chuck, described manipulator is positioned at the outside of multiple described thimble, and the inside edge of described manipulator and each described thimble exist the second preset pitch in described electrostatic chuck radial direction.
Wherein, the span of described second preset pitch is at 1 ~ 2cm.
The present invention also provides a kind of semiconductor processing equipment, comprise reaction chamber and transmitting device, the electrostatic chuck for bearing wafer is provided with in described reaction chamber, described transmitting device is used for realizing electrostatic disk loaded with wafers or unloading wafer, and described transmitting device adopts above-mentioned transmitting device provided by the invention.
The present invention has following beneficial effect:
Transmitting device provided by the invention, its fringe region by the corresponding electrostatic chuck of multiple thimble is arranged, and, the first preset pitch is there is in the edge of each thimble and electrostatic chuck in electrostatic chuck radial direction, when the fringe region generation bonding die phenomenon of wafer, thimble power is upwards applied to the fringe region of wafer, and bonding die produces the fringe region that downward power is applied to wafer, when this realizes discharging, slight bonding die can not produce wafer skew, and wafer skew may be produced during serious bonding die release but side-play amount is less, this and bonding die in prior art cause wafer to offset and side-play amount greatly compared with, the probability causing wafer inclination due to bonding die can be reduced to a great extent, thus wafer can be avoided to be hit partially or crash, thus the stability that can improve transmitting device and the requirement reduced electrostatic chuck adsorption capacity.
Semiconductor processing equipment provided by the invention, it adopts above-mentioned transmitting device provided by the invention, the probability causing wafer inclination due to bonding die can be reduced to a great extent, thus wafer can be avoided to be hit partially or crash, thus the stability that can improve transmitting device and the requirement reduced electrostatic chuck adsorption capacity.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing transmitting device;
Fig. 2 is the cutaway view of the electrostatic chuck in Fig. 1;
Fig. 3 is for adopting the course of work schematic diagram of transmitting device realization to electrostatic chuck unloading wafer shown in Fig. 1;
Fig. 4 is the bonding die phenomenon occurred in the process of unloading wafer;
Fig. 5 is the phenomenon schematic diagram that skew occurs wafer on the basis of Fig. 4;
The first structural representation of the transmitting device that Fig. 6 provides for the embodiment of the present invention;
Fig. 7 is the vertical view of electrostatic chuck in Fig. 6;
Fig. 8 is for adopting the course of work schematic diagram of transmitting device realization to electrostatic chuck unloading wafer shown in Fig. 6;
Fig. 9 is for adopting the course of work schematic diagram of transmitting device realization to electrostatic chuck loaded with wafers shown in Fig. 6;
The second structural representation of the transmitting device that Figure 10 provides for the embodiment of the present invention; And
The third structural representation of the transmitting device that Figure 11 provides for the embodiment of the present invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, transmitting device provided by the invention and semiconductor processing equipment are described in detail.
The first structural representation of the transmitting device that Fig. 6 provides for the embodiment of the present invention.Fig. 7 is the vertical view of electrostatic chuck in Fig. 6.See also Fig. 6 and Fig. 7, the transmitting device that the present embodiment provides is for realizing electrostatic disk 22 loaded with wafers or unloading wafer, and it comprises thimble elevating mechanism and manipulator 20.Wherein, thimble elevating mechanism comprises multiple thimble 21 and lift actuator (not shown), each thimble 21 runs through the upper and lower surface of electrostatic chuck 22, lift actuator is elevated in electrostatic chuck 22 for driving each thimble 21, so that the wafer be positioned on multiple thimble 21 is maybe placed on electrostatic chuck 22 by the wafer jack-up be positioned on electrostatic chuck 22, and, the fringe region of the corresponding electrostatic chuck 22 of multiple thimble 21 is arranged, and, in electrostatic chuck 22 radial direction, the first preset pitch D1 is there is in each thimble 21 with the edge of electrostatic chuck 22, preferably, the span of the first preset pitch is at 2 ~ 3cm, as from the foregoing, when the fringe region generation bonding die phenomenon of wafer, thimble 21 power is upwards applied to the fringe region of wafer, and bonding die produces the fringe region that downward power is applied to wafer, when this can realize discharging, slight bonding die can not produce wafer skew, and wafer skew may be produced during serious bonding die release but side-play amount is less, this and bonding die in prior art cause wafer to offset and side-play amount greatly compared with, the probability causing wafer inclination due to bonding die can be reduced to a great extent, thus wafer can be avoided to be hit partially or crash, thus the stability that can improve transmitting device and the requirement reduced electrostatic chuck 22 adsorption capacity.
In the present embodiment, preferably, multiple thimble 21 along electrostatic chuck 22 circumferential interval and evenly arrange, this not only can realize multiple thimbles 21 more stably supporting wafers, and can be implemented in thimble 21 when there is bonding die, to be applied to the power of wafer even, thus can avoid to a certain extent offseting when bonding die discharges, and any marginal position generation bonding die in wafer circumference can be avoided.
In addition, preferably, the span of the quantity of thimble 21 is at 6 ~ 10, and in the present embodiment, the quantity of thimble 21 is 8, and arranges along the circumferential interval of electrostatic chuck 22.In actual applications, the quantity of thimble 21 specifically can be arranged according to factors such as the sizes of the diameter of electrostatic chuck 22, electrostatic adsorption force, and particularly, the diameter of electrostatic chuck 22 is larger, and the quantity that should arrange thimble 21 is more; The electrostatic adsorption force of electrostatic chuck is larger, and the quantity that should arrange thimble 21 is more.
Manipulator 20 is for carrying and transferring wafer, and when loaded with wafers, manipulator 20, by the predeterminated position above wafer transmission to electrostatic chuck 22, will be positioned at wafer jack-up on manipulator 20 to make the rising of multiple thimble 21 and be positioned on multiple thimble 21, when unloading wafer, manipulator 20 transfers to the predeterminated position above electrostatic chuck 22, be positioned on manipulator 20 to make multiple thimble 21 times generals who has surrendered wafer be positioned on multiple thimble 21 decline, in the present embodiment, manipulator 20 adopts structure as shown in Figure 6, when manipulator 20 transfers to the predeterminated position above electrostatic chuck 22, manipulator 20 is positioned at the outside of multiple thimble 21, and there is the second preset pitch D2 in the inside edge of manipulator 20 and each thimble 21 in electrostatic chuck 22 radial direction, preferably, the span of the second preset pitch D2 is at 1 ~ 2cm, by the setting of the second preset pitch D2, the transmitting moving of the elevating movement of thimble 21 and manipulator 20 can be made non-interference, thus the stability of transferring wafer can be ensured, and manipulator 20 adopts structure as shown in Figure 6, manipulator 20 can be made not affect the setting of thimble 21 position and quantity, thus make transmitting device can be applied in any technique, thus the applicability of the transmitting device that the present embodiment provides can be improved.
Easy understand, manipulator 20 adopts structure as shown in Figure 6, the length of manipulator 20 in electrostatic chuck 22 radial direction is D3, the position that the position of centre of gravity of wafer corresponds on electrostatic chuck 22 is O, the length of position of centre of gravity in electrostatic chuck 22 radial direction of wafer is D4, for realizing manipulator 20 stably bearing wafer, D3 should be greater than D4.
Describe below in conjunction with Fig. 8 the transmitting device adopting the present embodiment to provide in detail how to realize carrying out unloading wafer to electrostatic chuck 22.Particularly, comprise the following steps: initial condition is as schemed shown in a in Fig. 8, the wafer having completed technique is positioned on electrostatic chuck 22;
Step S10, as schemed shown in b in Fig. 8, lift actuator drives thimble 21 to rise, and being positioned at wafer S jack-up to the first predeterminated position on electrostatic chuck 22, the first predeterminated position will be for scheming the wafer S position shown in b in Fig. 3;
Step S11, as schemed shown in c in Fig. 8, unloaded manipulator 20 transfers to the second predeterminated position, and to make manipulator 20 between electrostatic chuck 22 and wafer S, the second predeterminated position is for scheming manipulator 20 position shown in c in Fig. 8;
Step S12, as schemed shown in d in Fig. 8, lift actuator drives thimble 21 to drop to the below of electrostatic chuck 22 upper surface, is positioned on manipulator 20 to make the wafer S be positioned on thimble 21;
Step S13, the manipulator 20 carrying wafer S is passed back, with by wafer transmission to being used for the film magazine placing wafer S, complete the process to electrostatic chuck 22 unloading wafer, as schemed shown in e in Fig. 8.
Describe below in conjunction with Fig. 9 the transmitting device adopting the present embodiment to provide in detail how to realize carrying out loaded with wafers to electrostatic chuck 22.Particularly, comprise the following steps: initial condition is as schemed shown in a in Fig. 9, thimble 21 is positioned at the below of electrostatic chuck 22 upper surface;
Step S20, as schemed shown in b in Fig. 9, the manipulator 20 carrying wafer transfers to the second predeterminated position directly over electrostatic chuck 22, and the second predeterminated position schemes manipulator 20 position shown in b in such as Fig. 9;
Step S21, as schemed shown in c in Fig. 9, lift actuator drives thimble 21 to rise, and being positioned at wafer S jack-up to the first predeterminated position on manipulator 20, the first predeterminated position will be for scheming the wafer S position shown in c in Fig. 9;
Step S22, as schemed shown in d in Fig. 9, unloaded manipulator 20 is passed back from the second predeterminated position;
Step S23, lift actuator drives thimble 21 to drop to the below of electrostatic chuck 22 upper surface, to make the wafer S be positioned on thimble 21 be positioned on electrostatic chuck 22, as schemed shown in e in Fig. 9, completes the process to electrostatic chuck 22 loaded with wafers.
It should be noted that, the transmitting device that said process just adopts the present embodiment to provide is to a kind of embodiment of electrostatic chuck 22 loaded with wafers and unloading wafer, the present invention is not limited thereto, as long as the transmitting device that can realize adopting the present embodiment to provide is to electrostatic chuck 22 loaded with wafers and unloading wafer.
Also it should be noted that, in the present embodiment, manipulator 20 adopts structure as shown in Figure 6.But the present invention is not limited thereto, in actual applications, also can adopt other structures, as long as manipulator 20 and thimble 21 elevating mechanism can be realized with the use of completing electrostatic chuck 22 loading and unloading wafer.Such as, can adopt structure as shown in Figure 10, it is identical with manipulator 20 structure of the prior art, thus can avoid the waste of existing machinery hand 20, thus the utilance that can raise the cost, and then can reduce costs; For another example, can adopt structure as shown in Figure 11, itself and manipulator of the prior art 20 structure are similar, and only need to process further existing manipulator, thus also can raise the cost utilance.
Alternatively technical scheme, the present invention also provides a kind of semiconductor processing equipment, comprise reaction chamber and transmitting device, the electrostatic chuck for bearing wafer is provided with in reaction chamber, transmitting device is used for realizing electrostatic disk loaded with wafers or unloading wafer, the above-mentioned transmitting device that this transmitting device adopts the above embodiment of the present invention to provide.
This semiconductor processing equipment comprises ICP etching apparatus.
Semiconductor processing equipment provided by the invention, its transmitting device adopting the above embodiment of the present invention to provide, the probability causing wafer inclination due to bonding die can be reduced to a great extent, thus wafer can be avoided to be hit partially or crash, thus the stability that can improve transmitting device and the requirement reduced electrostatic chuck adsorption capacity.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (8)
1. a transmitting device, for realizing electrostatic disk loaded with wafers or unloading wafer, comprise thimble elevating mechanism, described thimble elevating mechanism comprises multiple thimble and lift actuator, each described thimble runs through the upper and lower surface of described electrostatic chuck, described lift actuator is elevated in described electrostatic chuck for driving each described thimble, so that the wafer be positioned on multiple described thimble is maybe placed on described electrostatic chuck by the wafer jack-up be positioned on described electrostatic chuck, it is characterized in that, the fringe region of the corresponding described electrostatic chuck of described multiple thimble is arranged, and, the first preset pitch is there is in the edge of each described thimble and described electrostatic chuck in described electrostatic chuck radial direction.
2. transmitting device according to claim 1, is characterized in that, described multiple thimble along described electrostatic chuck circumferential interval and evenly arrange.
3. transmitting device according to claim 1, is characterized in that, the span of described first preset pitch is at 2 ~ 3cm.
4. transmitting device according to claim 1 and 2, is characterized in that, the span of the quantity of described thimble is at 6 ~ 10.
5. transmitting device according to claim 1, it is characterized in that, also comprise manipulator, described manipulator is used for carrying and transmits described wafer, when loading described wafer, described manipulator, by the predeterminated position above described wafer transmission to described electrostatic chuck, will be positioned at wafer jack-up on described manipulator to make multiple described thimble rising and be positioned on multiple described thimble; When unloading described wafer, described robotic transfer, to the predeterminated position above described electrostatic chuck, is positioned on described manipulator to make general who has surrendered's wafer be positioned on multiple described thimble under multiple described thimble decline.
6. transmitting device according to claim 5, it is characterized in that, when described robotic transfer is to described predeterminated position above described electrostatic chuck, described manipulator is positioned at the outside of multiple described thimble, and the inside edge of described manipulator and each described thimble exist the second preset pitch in described electrostatic chuck radial direction.
7. transmitting device according to claim 6, is characterized in that, the span of described second preset pitch is at 1 ~ 2cm.
8. a semiconductor processing equipment, comprise reaction chamber and transmitting device, the electrostatic chuck for bearing wafer is provided with in described reaction chamber, described transmitting device is used for realizing electrostatic disk loaded with wafers or unloading wafer, it is characterized in that, described transmitting device adopts the transmitting device described in claim 1-7 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410245723.8A CN105448787A (en) | 2014-06-05 | 2014-06-05 | Transmission device and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410245723.8A CN105448787A (en) | 2014-06-05 | 2014-06-05 | Transmission device and semiconductor processing equipment |
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| Publication Number | Publication Date |
|---|---|
| CN105448787A true CN105448787A (en) | 2016-03-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410245723.8A Pending CN105448787A (en) | 2014-06-05 | 2014-06-05 | Transmission device and semiconductor processing equipment |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112309889A (en) * | 2019-08-02 | 2021-02-02 | 合肥晶合集成电路股份有限公司 | Substrate detection device and detection method thereof |
| CN112349648A (en) * | 2020-10-26 | 2021-02-09 | 北京北方华创微电子装备有限公司 | Lift needle mechanism and semiconductor process equipment |
| CN112466799A (en) * | 2020-12-02 | 2021-03-09 | 北京北方华创微电子装备有限公司 | Method for controlling running speed of lifting mechanism |
| CN112670226A (en) * | 2020-12-23 | 2021-04-16 | 华虹半导体(无锡)有限公司 | Device and method for removing adsorption of wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112670226B (en) * | 2020-12-23 | 2022-07-19 | 华虹半导体(无锡)有限公司 | Device and method for removing adsorption of wafer |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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Application publication date: 20160330 |