CN105448423A - Conducting film manufacturing method, touch control panel manufacturing method, and touch control panel - Google Patents
Conducting film manufacturing method, touch control panel manufacturing method, and touch control panel Download PDFInfo
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- CN105448423A CN105448423A CN201410260351.6A CN201410260351A CN105448423A CN 105448423 A CN105448423 A CN 105448423A CN 201410260351 A CN201410260351 A CN 201410260351A CN 105448423 A CN105448423 A CN 105448423A
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Abstract
The invention relates to the technical field of touch control, and especially relates to a conducting film manufacturing method, a touch control panel manufacturing method, and a touch control panel. The conducting film manufacturing method comprises the steps: S1, providing a transparent base material; S2, coating the transparent base material with a photoresist layer; S3, manufacturing a groove with the corresponding pattern on the photoresist layer, and solidifying the photoresist layer with ultraviolet light; S4, coating the interior of the groove with nano silver thread solution; S5, solidifying the nano silver thread solution in the groove, so as to form a nano silver thread conducting film.
Description
[technical field]
The present invention relates to technical field of touch control, particularly a kind of manufacture method of conducting film and the manufacture method of contact panel and contact panel.
[background technology]
At traditional intelligence mobile phone, as in the capacitance type touch-control panel of iphone etc., the material of conducting film is generally tin indium oxide (referred to as ITO).The light transmittance of ITO is very high, and electric conductivity is better, and extensive use is the conductive electrode material of current contact panel and display floater.But, indium is a kind of metal material of costliness, using ITO as the material of conductive layer, promotes the cost of touch-screen to a great extent, moreover, whole the ito film of having plated, in patterning process, need etch, to form ITO pattern by ITO conductive layer, in this process, a large amount of ITO is etched, and cause a large amount of noble metal wastes and pollute, cost is higher.And in manufacture method, making ITO conducting film needs vacuum chamber, higher depositing temperature and/or high annealing temperature to obtain high conductance, causes the integral manufacturing cost of ITO very expensive.There is not too large change in recent years in the basic manufacturing process of ITO conducting film.Always inevitably need ITO plated film, ITO pattern.
Just because of this, industrial circle is being devoted to the substitution material developing ITO always, and wherein nano-silver thread (silvernanowires is called for short SNW) starts alternative ITO as a kind of brand-new material becomes preferred electric conducting material.SNW is the one that many ITO substitution material are the most ripe at present.Nano-silver thread has the excellent conductivity of silver, simultaneously due to the dimensional effect of its Nano grade, makes it have excellent light transmission and flexible resistance, therefore can be used as and preferably substitute ITO as the material of touch control electrode, realize the contact panel based on nano-silver thread.
Nano-silver thread is made the current also non-full maturity of method of conductive layer, some manufacture crafts or the making apparatus of still using ITO to a great extent copy mechanically and apply indiscriminately the making being used in nano-silver thread conducting film.The most frequently used no more than, when making conductive layer, in substrate, front is coated with one deck nano-silver thread conduction slurries, forms the conductive film of nano-silver thread, then etch the conductive pattern wanted after solidification.This method can etch away very many nanometer silver wire material when making conductive film, and these materials cannot reuse, and can only carry out reclaiming again shaping rear just can continuation and use, cause raw-material excess waste.
In other other techniques, nano-silver thread is coated on matrix or base material by big city.In the technique of coating, the nano-silver thread prepared due to prior art has very high length-width ratio (being greater than 100), therefore certain technology difficulty is there is when being coated with and forming homogeneous film, and owing to only overlapping with more weak intermolecular force between nano-silver thread, easily there is slippage deflecting under effect, cause the resistance of nano-silver thread conducting film higher, steering capability is bad.
Simultaneously, because the reflecting ratio ITO of nano-silver thread is high, when adopting nano-silver thread as conductive layer, contact panel visually there will be white mist phenomenon, if adopt coating nano-silver thread to make conductive layer, the distribution area of nano-silver thread conducting film on base material is very large, so that the haze issues of the material of nano-silver thread own clearly, will affect visual effect and the light transmittance of the touch panel that it is made into.
[summary of the invention]
Substituting ITO as new electric conducting material to make the technological problems of contact panel for overcoming existing nano-silver thread, the invention provides a kind of manufacture method of new conducting film and the manufacture method of contact panel and contact panel.
The scheme of technical solution problem of the present invention is to provide a kind of manufacture method of conducting film, and this manufacture method comprises the following steps:
Step S1, provides a transparent base;
Step S2, described transparent base is coated with photoresist layer;
Step S3, described photoresist layer is produced the groove of corresponding pattern and utilizes ultraviolet lighting to solidify described photoresist layer;
Step S4, is coated with nano-silver thread solution in described groove; And
Step S5, solidifies nano-silver thread solution in described groove to form nano-silver thread conducting film.
Preferably, in step S4, described coating process is:
S41, is coated with to the second end by the first end of described photoresist layer; And
S42, continue S41, is coated with to described first end by described second end of described photoresist layer;
Described first end and described second end are two edge of described photoresist layer.
Preferably, the coating method in described step S4 is slit extrusion coated (slotdiecoating).
Preferably, in step S3, after utilizing the mould of a patterning to exert pressure with volume to volume processing procedure to described photoresist layer, lattice is transferred to the groove described photoresist layer being formed patterning.
Preferably, described nano-silver thread conducting film comprises plural nano-silver thread conductive electrode and the virtual nano-silver thread conductive electrode of plural number.
A manufacture method for contact panel, this manufacture method comprises the following steps:
Step S6, adopt the manufacture method of conducting film as above to be formed on base material to have and conduct electricity the nano-silver thread conducting film of micro-pattern, the micro-pattern of described conduction comprises the conductive electrode on two axial directions;
Step S7, described have conduct electricity micro-pattern nano-silver thread conducting film above lay one with the transparent insulating layer of multiple through hole, each through hole described corresponds to the conductive electrode place of one of them axial direction, filled conductive material in each through hole described; And
Step S8, described transparent insulating layer is laid many wire-connectings, each through hole conducting described is connected.
A manufacture method for contact panel, this manufacture method comprises the following steps:
Step S9, adopts the manufacture method of conducting film as above to form described nano-silver thread conducting film;
Step S10, one ITO conductive layer is provided, described ITO conductive layer has the plural ITO conductive electrode along an axial directional distribution, have the plural nano-silver thread conductive electrode along another axial directional distribution in described nano-silver thread conducting film, each ITO conductive electrode described and each nano-silver thread conductive electrode described are staggered; And
Step S11, fits described nano-silver thread conducting film and described ITO conductive layer.
A kind of contact panel, comprises transparent base; Conduct electricity micro-patterned layer, the micro-patterned layer of described conduction is arranged on described transparent base, described conduction micro-pattern series of strata nano-silver thread conducting film, comprise groove and be filled in many nano-silver threads in described groove, described nano-silver thread overlaps formation conductive network mutually.
Preferably, the micro-patterned layer of described conduction comprises plural nano-silver thread conductive electrode and the virtual nano-silver thread conductive electrode of plural number, described contact panel separately comprises the cover plate that has a visible surface and an inner surface, and an ITO conductive layer, ITO conductive layer is arranged on described inner surface, and described ITO conductive layer has the plural ITO conductive electrode along an axial directional distribution.
Preferably, the line length of described nano-silver thread is 10 μm-300 μm, and wire diameter is less than 500nm, and length-width ratio is greater than 400, and the degree of depth of described groove is less than 5 μm, and the width of described groove is 200nm-30 μm.
Preferably, the cross sectional shape of described groove is square, trapezoidal, semicircle or triangle.
Preferably, the area of section of described groove is less than 10% in the occupation rate of described substrate surface area.
A kind of contact panel, comprising: transparent base; Conduct electricity micro-patterned layer, the micro-patterned layer of described conduction is arranged on described transparent base, and described conduction micro-pattern series of strata nano-silver thread conducting film, comprises groove and be filled in many nano-silver threads in described groove; Transparent insulating layer, to be layed in above the micro-patterned layer of described conduction and to be provided with multiple through hole, and each through hole described corresponds to the conductive electrode place of one of them axial direction, and filled conductive material in each through hole described; With many wire-connectings, be laid on described transparent insulating layer, described multiple through hole conducting connects by described many wire-connectings.
Compared with prior art, the conductive layer of contact panel of the present invention replaces with nanometer silver wire material by traditional ITO material, conductive effect is better, cost is lower, in the technical field of touch control that the nano-silver thread of apparent visual better effects if updates up till now, cater to and the developing direction of leading touch-control product gradually, the forward-looking beneficial effect with leading market.
The manufacture method of conducting film of the present invention, the linear network grid pattern on mould is transferred to when making nano-silver thread conducting film on photoresist layer and on base material, forms the micro-pattern of conduction by the mode of coating nano-silver thread solution afterwards by the manufacture method of contact panel.Because it is only just coated with nanometer silver wire material in the line-shaped conductive junction of the micro-pattern of conduction, namely can be understood as and conduct electricity the wire distribution area of micro-pattern and be the coated area of nanometer silver wire material.And existing etching or photoetching process are being interrupted without the need to junction by the nano-silver thread conducting film of whole that makes, the mode interrupted is wire cutting.The micro-pattern of conduction after being interrupted by wire is the micro-pattern of planar dispensing of conductive.So relatively, the manufacture method of conducting film of the present invention, the distribution form of traditional planar is become the distribution form of wire by the nano-silver thread conducting film of the manufacture method making of contact panel.
In the micro-pattern of the conduction of the rectangular grid of standard, even can be understood as, the line-like area etched away in photoetching or etch process is the manufacture method of conducting film of the present invention, the region of the nano-silver thread be coated with in the manufacture method of contact panel.So by the manufacture method of conducting film of the present invention, the distribution area of nano-silver thread conducting film on base material that the manufacture method of contact panel is produced will be greatly less.
The manufacture method of conducting film of the present invention, the wire grid that the manufacture method of contact panel is produced conducts electricity the area of micro-pattern and only accounts for 5% of nano-silver thread conducting film surface area.Under wire grid conducts electricity cause that micro-pattern area reduces, the light transmittance of the nano-silver thread conducting film made is improved, and simultaneously the materials'use amount of nano-silver thread greatly reduces, and cost of manufacture is reduced.Certainly, simultaneously due to the minimizing of the micro-pattern area of grid line-shaped conductive, the haze issues itself had also is greatly improved.
The manufacture method of conducting film of the present invention, the manufacture method directly formed patterns on photoresist layer of contact panel, and this photoresist layer can take off from base material as required or retain on it.Being different from must by the feature of the micro-pattern forming of conduction on base material in prior art.Material behavior so for base material requires just greatly to reduce, and no matter is flexible parent metal or rigid substrate, only need after on photoresist layer, transfer printing goes out the groove of patterning, and brushing nano-silver thread solution, then solidification can form the micro-pattern of latticed conduction.In view of this, the material behavior for base material requires greatly to reduce.
Owing to being just transferred on photoresist layer by micro-pattern, conveniently ultraviolet curing can be carried out to it in the process of transfer printing.After solidification, nano-silver thread is coated in the micro-pattern of conduction of easier formation rule after in groove.Photoresist layer after solidification can also as the spacer region of conducting electricity between micro-pattern lines border, to ensure to conduct electricity the complete conducting of micro-pattern.
When wet coating nano-silver thread solution, the mode of reciprocal employing slit coating, the second end is applied to continuously from the first end of photoresist layer, or be that certain design angle is back and forth coated with in the line of first end and the second end, nano-silver thread solution can be poured in groove by the bottom of groove and inside more completely and form the micro-pattern of the higher conduction of yield.
In addition, because conductive layer of the present invention is that nanometer silver wire material is made, its conductivity and light transmission are all very good.So that the degree of depth of mould glazing cutting can be more shallow, that is to say that the thickness of the nano-silver thread conducting film finally produced can be thinner, 10 μm can be less than, also 500nm can be less than, even can reduce to and be less than 200nm, so require greatly to reduce to manufacture craft, the nano-silver thread conducting film simultaneously produced meets lightening demand more.In recess width, due to the excellent transmittance characteristics of nano-silver thread, the light transmittance that its width can need be confined to less than 5 μm guarantee conductive layers as other electric conducting materials is greater than 90%, as the manufacture method of conducting film of the present invention, the recess width of the manufacture method of contact panel arbitrarily can adjust in 20 μm-30 μm, can ensure that light transmittance is more than 90%.To make to be no matter that technological requirement when making mould or when making whole nano-silver thread conducting film is reduced.
[accompanying drawing explanation]
Fig. 1 is the cross section structure schematic diagram of nano-silver thread conductive film of the present invention.
Fig. 2 is the floor map of nano-silver thread conductive film of the present invention.
Fig. 3 is the manufacture method flow chart of conducting film of the present invention.
Fig. 4 is the transparent base perspective view provided in the manufacture method step of conducting film of the present invention.
Fig. 5 is the perspective view after being coated with photoresist in the manufacture method step of conducting film of the present invention.
Fig. 6 conducts electricity micro-pattern to be transferred to the perspective view after photoresist layer in the manufacture method step of conducting film of the present invention.
Fig. 7 is the perspective view in the manufacture method step of conducting film of the present invention after wet coating nano-silver thread solution.
Fig. 8 is the perspective view in the manufacture method step of conducting film of the present invention after glossing.
Fig. 9 is the manufacture method flow chart of contact panel of the present invention.
Figure 10 is the micro-pattern plane schematic diagram of conduction produced in the manufacture method step of contact panel of the present invention.
Figure 11 a is that the first grid produced in the manufacture method step of contact panel of the present invention conducts electricity the profile of micro-pattern.
Figure 11 b is that the second grid produced in the manufacture method step of contact panel of the present invention conducts electricity the profile of micro-pattern.
Figure 11 c is that the third grid produced in the manufacture method step of contact panel of the present invention conducts electricity the profile of micro-pattern.
Figure 11 d is that the 4th kind of grid produced in the manufacture method step of contact panel of the present invention conducts electricity the profile of micro-pattern.
Figure 12 is the zoomed-in view at A place in Figure 10, for providing the floor map after an insulation cushion in the manufacture method step of contact panel of the present invention.
Figure 13 is the floor map lay wire-connecting in the manufacture method step of contact panel of the present invention on insulation cushion after.
Figure 14 is the contact panel detonation configuration schematic diagram adopting the manufacture method of contact panel of the present invention to produce.
Figure 15 is the zoomed-in view at B place in Figure 14.
Figure 16 is the another touch panel structure provided schematic diagram adopting the manufacture method of contact panel of the present invention to produce.
Figure 17 a is the micro-pattern plane schematic diagram of conduction of contact panel shown in Figure 16.
Figure 17 b is conduction micro-pattern deformation structural plan schematic diagram of contact panel shown in Figure 16.
[embodiment]
In order to make object of the present invention, technical scheme and advantage are clearly understood, below in conjunction with accompanying drawing and embodiment, are further elaborated to the present invention.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Refer to Fig. 1 and Fig. 2, it is the cutting structural representation of nano-silver thread conducting film 800, nano-silver thread film 805 is generally produced on base material 807, comprises the many nano-silver threads 801 be embedded in matrix 803, and nano-silver thread 801 is arranged in matrix 803 mutually to overlap and forms conductive network.Nano-silver thread 801 (silvernanowires, be called for short SNW) line length be 10 μm-300 μm, preferably 20 μm-100 μm, preferably its length is 20 μm-50 μm, the wire diameter (or live width) of nano-silver thread 801 is less than 500nm or is less than 200nm, 100nm, is preferably less than 50nm, and its length-width ratio ratio of wire diameter (line length with) is greater than 10, be preferably greater than 50, more preferably greater than 100, be greater than 400, be greater than 500.Base material 807 is generally transparent insulation material, can be glass, polyimides (Polyimide, PI), polymethyl methacrylate (PMMA), Merlon (PC), PETG (PET) etc., but not as limit.
Silver is silvery white metal under general state, and is opaque material, and conductivity is splendid.And when silver makes nano-silver thread 801, nano-silver thread 801 has good light transmittance and splendid conductivity, can be good at the touch control electrode applying to contact panel.
Matrix 803 refers to that the solution containing nano-silver thread 801 is being arranged on base material 807 through methods such as coatings, after heating, drying makes volatile material volatilize, stays non-nano silver line 801 material on base material 807.Nano-silver thread 801 scatters or embeds wherein, forms conductive network, and part nano-silver thread 801 is outstanding from matrix 803 material.Nano-silver thread 801 relies on matrix 803 to form nano-silver thread film 805, and matrix 803 can protect nano-silver thread 801 from the impact of the external environments such as burn into wearing and tearing.
The thickness of nano-silver thread film 805 is about 10nm-5 μm, and be preferably 20nm-1 μm, more excellent is 50nm-200nm.In certain embodiments, the refractive index of nano-silver thread conducting film 805 is 1.3-2.5, and more excellent is 1.35-1.8.
Solution containing nano-silver thread 801 refers to, nano-silver thread 801 is dispersed in the aaerosol solution formed in specific solvent, and this solvent can be water, the aqueous solution, solion or thickener, but not as limit.
In addition, by selecting suitable matrix 803 material to adjust the optical characteristics of nano-silver thread film 805, particularly haze issues is solved.Such as, matrix 803 can be adjusted to refractive index, component and certain thickness with expectation, can effectively reduce reflection loss, glare effects, mist degree.
Mist degree refers to the outward appearance of cloud because nano-silver thread 801 surface light diffusion in nano-silver thread film 805 causes or muddiness.The haze issues of screen can cause when outdoor scene light irradiates, and screen reflection light intensity is strong, and user can be made time serious not see screen.
The light transmittance of nano-silver thread film 805 or definition can limiting by following parameter quantitative: light transmittance and mist degree.Light transmittance refers to the percentage of the incident light by medium transmission, and the light transmittance of nano-silver thread film 805 is at least 90%, even can up to 95%-97%.Mist degree is light diffusing index, and mist degree refers in incident light to be separated and the number percent of light of scattering in the process of transmission.Mist degree more than 3%, even can not can reach and be no more than 1.5% in an embodiment of the present invention.
Please refer to Fig. 3-Fig. 7, the invention provides a kind of manufacture method of conducting film, this conducting film is above-mentioned nano-silver thread conducting film 800.Select to form this nano-silver thread conducting film 800 with the method for impression in the present invention.Especially, when transparent base 807 is flexible material, the method that can be impressed by the roller of volume to volume this nano-silver thread conducting film 800 of production at a high speed.First produce the mould 103 with respective wire grid pattern 1031, the shape of the grid cell of lattice 1031 is positive triangle, square, rhombus, rectangle, parallelogram or curvilinear boundary quadrilateral, regular hexagon, polygon, irregularly shaped etc., then carries out following steps:
Step S1, provides a transparent base 106.Refer to Fig. 4, base material 106 is made for flexible material, as selected having mercy on property flexible material to make, referring to and industrially has some strength and have certain flexual material.Include but not limited to polyimides (Polyimide, PI), polymethyl methacrylate (PMMA), Merlon (PC), PETG (PET) etc.
Step S2, coating photoresist.Refer to Fig. 5, transparent base 106 applies the photoresist of layer of transparent, form photoresist layer 107.The thickness of photoresist layer 107 is the thickness being less than or equal to nano-silver thread film 805, is namely less than or equal to 10nm-50 μm, is preferably less than or equal to 20nm-10 μm, more excellent in being less than or equal to 50nm-200nm.
Step S3, photoresist layer 107 is produced corresponding patterned groove 1071.Refer to Fig. 6, after transparent base 106 is formed photoresist layer 107, the photoresist layer 107 on mould 103 pairs of base materials 106 of lattice 1031 is had to exert pressure by a surface again, while exerting pressure, the means such as ultra-violet curing photoresist layer 107 can be adopted, the lattice 1031 on mould 103 surface is transferred on photoresist layer 107, the lattice 1031 on photoresist layer 107 on shaping dies 103.The sideline of the lattice 1031 wherein on photoresist layer 107 is groove 1071.The degree of depth of groove is less than 5 μm, is preferably less than 500nm, is more preferably less than 200nm.The notch cross sectional planes area of this groove 1071 is less than 10%-20% with the ratio of the surface area of photoresist layer 107, more excellent in being less than 5%-10%.
When lattice 1031 is transferred to after on photoresist layer 107, because photoresist layer 107 is fluidity material, it has certain mobility, make lattice 1031 more regular to be formed, more stablely after convenient pour into nano-silver thread 801 solution, can be cured photoresist layer 107 by solidification means such as ultraviolets herein, reduce the elasticity of its internal material, be convenient to inject nano-silver thread 801 solution.Solidification wavelength is less than 400nm.
In this step, after preferably using mould 103 to exert pressure with volume to volume processing procedure to described photoresist layer 107, lattice 1031 is transferred on photoresist layer 107.
In other alternate embodiment, such as when base material 106 is two-sided be all coated with photoresist, after volume to volume can be utilized to exert pressure, lattice 1031 is transferred on photoresist layer 107.
Step S4, wet coating nano-silver thread solution.Also known as metallization process, refer to Fig. 7, nano-silver thread 801 solution of hydrophobic solvent is mixed with in the coating of transparent photomask glue-line 107 surface, nano-silver thread 801 is made to be deposited in the groove 1071 of lattice 1031 according to Self-leveling effect, and one deck hydrophobic layer is coated with on transparent photomask glue-line 107, assemble in groove 1071 to accelerate nano-silver thread 801 solution.Continous way coating process is adopted in wet coating technique, nano-silver thread 801 solution of hydrophobic solvent is mixed with in the coating of transparent photomask glue-line 107 surface, nano-silver thread in this nano-silver thread 801 solution line length be 10 μm-300 μm, preferably 20 μm-100 μm, preferably its length 20 μm-50 μm, the wire diameter of nano-silver thread 801 is less than 500nm or is less than 200nm, 100nm, is preferably less than 50nm, and its length-width ratio is greater than 100, be preferably greater than 400, more preferably greater than 500.Hydrophobic solvent proportion is between 10%-20%.
According to Self-leveling effect, nano-silver thread 801 solution meeting autodeposition is in the groove 1071 of photoresist layer 107, the hydrophobic layer being coated with one deck 10% can be increased on transparent photomask glue-line 107 surface, the THICKNESS CONTROL of this hydrophobic layer is within 200nm, make it much smaller than the degree of depth of groove 1071, then coordinate the water-repelling agent composition itself contained in nano-silver thread 801 solution, nano-silver thread 801 can be accelerated and assemble toward groove 1071 place, after continous way coating, guarantee that nano-silver thread 801 solution riddles in groove 1071.Afterwards by heated baking, make nano-silver thread 801 solution coagulates, finally in groove 1071, form the micro-pattern 105 of conduction.
In preferred embodiments of the present invention, when nano-silver thread 801 solution coat is on photoresist layer 107, adopt slit extrusion coated (Slotdiecoating), improve coating accuracy and uniformity further.After equipment being adopted ceaselessly to be applied to the second end 1077 from the first end 1075 of photoresist layer 107 according to a direction when operating coating, then doing drawback movement, ceaselessly moving towards first end 1075 from the second end 1077.Wherein first end 1075, second end 1077 is edges corresponding to two of photoresist layer 107.Employing slit extrusion coated also reciprocal coating can make nano-silver thread 801 solution better can flow into bottom and the corner of groove 1071, makes coating more all even complete.If needed, slit extrusion coated can be that certain design angle (15 °-85 °) is back and forth coated with the line of first end 1075 and the second end 1077.
Step S5, nano-silver thread 801 solution in solidification groove 1071, forms nano-silver thread conducting film 800.In groove 1071 after even spread good nano-silver thread 801 solution, nano-silver thread 801 solution solidified in groove 1071 is also needed to form nano-silver thread conducting film 800.Curing can toast for naturally drying, simply or is heating and curing, and is cured by nano-silver thread 801 solution in groove 1071 and forms the micro-pattern 105 of conduction.The temperature adopting hot pressing when being heating and curing means is between 25 DEG C to 250 DEG C.
In some cases (as not good in excessive glue, evenness etc.), can select to carry out glossing.Refer to Fig. 8, remove the nano-silver thread 801 of photoresist layer 107 excess surface, only retain the nano-silver thread 801 in groove 1071, thus form nano-silver thread conducting film 800; This nano-silver thread conducting film 800 comprises the micro-pattern of conduction 105 in groove 1071 and accommodates the photoresist layer 107 of the micro-pattern 105 of this conduction.This glossing can adopt any one or combination in mechanical polishing, chemical electrolysis or chemical corrosion.
The micro-pattern 105 of conduction of final formation is embedded in photoresist layer 107, further be embedded in the groove 1071 in photoresist layer 107, the area that the area of micro-pattern 105 and the area of groove 1071 account for whole photoresist layer 107 that conducts electricity is less than 10%-20%, more excellent in being less than 5%-10%.Photoresist layer 107 is transparent area 1073 except groove 1071 because in this region distribution be transparent photoresist, so the light transmittance of nano-silver thread conducting film 800 extremely I haven't seen you for ages is greater than the area of transparent area 1073, be at least greater than 80%.The micro-pattern of conduction 105 of adding nano-silver thread 801 material in groove 1071 itself has very high light transmission, is easy to reach more than 90% to make the light transmittance of whole nano-silver thread conducting film 800.
Refer to Fig. 9-Figure 15, adopt nano-silver thread conducting film 800 manufacture method as above to comprise to the method making contact panel 20:
Step S6, makes the micro-pattern 205 of conduction.Refer to Figure 10, the manufacture method one transfer printing by above-mentioned nano-silver thread conducting film 800 on base material 206 makes the micro-pattern 205 of conduction.Micro-pattern 205 that conducts electricity comprises the first conductive electrode 2051 of array and the second conductive electrode 2053, first conductive electrode 2051 and the orthogonal setting of the second conductive electrode 2053.First conductive electrode 2051 comprises multiple first conductive unit 2052, and the plurality of first conductive unit 2052 is contacted and formed path.Each first conductive unit 2052 is all provided with nano-silver thread conducting film 800 manufacture method transfer printing as above and the grid obtained conducts electricity micro-pattern 2054.Second conductive electrode 2053 comprise multiple in shape with the second conductive unit 2056 of the first conductive unit 2052 complementation, the plurality of second conductive unit 2056 is separated by the first conductive unit 2052, cannot be connected to each other, form second conductive electrode 2053 with virtual conductive electrode effect by this.
Refer to Figure 11 a, single grid conducts electricity the cross sectional view of micro-pattern 2054, and grid conducts electricity micro-pattern 2054 and formed by nano-silver thread 801 combination of conductive materials in groove 2071.The distribution area of base area on photoresist layer 207 of groove 2071 is the distribution area of the micro-pattern 205 of conduction on photoresist layer 207.It is numerically less than 5%-10%, if the distribution area of the micro-pattern 205 of conduction on photoresist layer 207 adopting photoetching process to be shaped at least is greater than 50%, find out thus, the material cost of the micro-pattern 205 of the conduction made by manufacture method of the present invention is adopted to greatly reduce, after the present invention simultaneously adopts nano-silver thread 801 to be made as the micro-pattern 205 of conduction, the minimizing of distribution area also can reduce the mist degree of nano-silver thread 801.
The degree of depth of groove 2071 is less than the thickness of photoresist layer 207, so that the micro-pattern 205 of the conduction of nano-silver thread 801 is that to be embedded in photoresist layer 207 inner, and micro-pattern 205 that makes to conduct electricity can not be formed with base material 206 and contact.The cross sectional shape of groove 2071 can be square, after cross sectional shape herein refers to and carries out cutting perpendicular to photoresist layer 207, and the cross sectional shape of the groove 2071 seen.
In other embodiments, refer to 11b, 11c, 11d, the shape of groove 2071 also can be trapezoidal, circular, triangle, irregularly shaped etc., but must ensure that the top opening size of groove 2071 is more than or equal to the size bottom groove 2071, such as trapezoidal long limit can be arranged on groove 2072 place, and minor face is being arranged on bottom land 2074 place, when setting like this is based on the little shape and structure in the mouth large end, be more prone to be circulated in groove 2071 during wet coating nano-silver thread 801 solution, evenly completely dissolve in photoresist layer 207, form the micro-pattern 205 of conduction that yield is higher.
Step S7, overlaps transparent insulation pad 2055 on every two the second conductive units 2056.Refer to Figure 12, adjacent two the second conductive units 2056 overlap by each transparent insulation pad 2055, and arrange through hole 2058 in the region that insulation cushion 2055 is overlapping with the second conductive unit 2056, fill full conductive materials afterwards in through hole 2058.
Step S8, insulation cushion 2055 is laid wire-connecting 2057.Refer to Figure 13, each insulation cushion 2055 is all laid a wire-connecting 2057, wire-connecting 2057 position corresponds to through hole 2058 place on two second wherein adjacent on direction conductive units 2052, namely wire-connecting 2057 is across above the second adjacent between two conductive unit 2052, and the second conductive unit 2052 below insulation cushion 2055 is electrically connected by the electric conducting material in through hole 2058 with the wire-connecting 2057 above insulation cushion 2055.So far, the second conductive electrode 2053 being electrically connected and defining conducting and connect is completed between two second adjacent conductive units 2052.
In some manufacturing process, toward contact need conduction micro-pattern 205 above a shaping cover plate, make complete touch panel.The material of cover plate can be glass, sapphire glass, tempered glass, PEEK (polyetheretherketone polyether-ether-ketone), PI (Polyimide polyimides), PET (polyethyleneterephthalate PETG), PC (Merlon Merlon), PES (polyethylene glycol succinate, PMMA (polymethyl methacrylate polymethylmethacrylate) and arbitrarily both material such as compound.
The material of the first conductive electrode 2051 and the second conductive electrode 2053 and wire-connecting 2057 can be nano-silver thread 801, also can be that other conducting metals are as gold, silver and bronze.Material in via hole also can be nano-silver thread 801 or other conducting metals.
Insulation cushion 2055 material can be photoresistance, PI, PC, PMMA, PET, PEEK, PES, transparent ink, resinae, the transparent insulation materials such as silicon dioxide, titanium oxide, zinc oxide, silicon nitride, silicon oxynitride, aluminium nitride, tantalum oxide, polyamides.
The present invention separately comprises after following three implementation steps are connected in described step S8: step S9, adopt the manufacture method of the conducting film as described in step S1 to step S8 formed as described in nano-silver thread conducting film 800; Step S10, one ITO conductive layer (not shown) is provided, described ITO conductive layer has the plural ITO conductive electrode (not shown) along an axial directional distribution, have the plural nano-silver thread conductive electrode (not shown) along another axial directional distribution in described nano-silver thread conducting film 800, each ITO conductive electrode described and each nano-silver thread conductive electrode described are staggered; And step S11, described nano-silver thread conducting film 800 is fitted with described ITO conductive layer.
Referring to Figure 14 and Figure 15, is the layer structure of contact panel 30 produced by above-mentioned contact panel manufacture method, and what be positioned at the superiors is cover plate 301, bottom be base material 309, base material 309 forms nano-silver thread conducting film 303.One deck levelling blanket 302 and/or layer protective layer (not shown) is coated with above nano-silver thread conducting film 303.The top of levelling blanket 302 and/or layer protective layer is optical match layer 304.When not being provided with the protective layer of viscosity, needing additionally to be provided with adhesive layer 306, being used for adhesive substrate 309 and cover plate 301.When being provided with the sticking protective layer of tool, adhesive layer 306 herein can not exist.
Nano-silver thread conducting film 303 is provided with the micro-pattern 305 of the conduction produced by manufacture method described in first embodiment of the invention, the micro-pattern 305 of this conduction comprises the first conductive electrode 3051 and the second conductive electrode (schemes not show, Figure 13 can be consulted), first conductive electrode 3051 is conducting connection mutually each other, after the first conductive electrode 3051 and the second conductive electrode that are positioned at photoresist layer 307 insulate by insulation cushion 3055 by the second conductive electrode, indirectly conducting is realized by wire-connecting 3057, form both direction (X and Y) shape complementarity, the micro-pattern 305 of conduction of conducting respectively.
In order to better solve the haze issues of nano-silver thread conducting film 303, after being provided with adhesive layer 306, adhesive layer 306 material OCA (Optical transparent adhesive, or LOCA (Liquid optical clear adhesive, LiquidOpticalClearAdhesive) OpticalClearAdhesive).Herein by the adhesive layer 306 of coating high index of refraction, the refractive index of this adhesive layer 306 is 1.52-1.79, and mist degree can be reduced to less than 5% to make to be coated in after on nano-silver thread conductive film 303, the best can be reduced to 3%, 2%, 1.5%.
Because OCA glue is when generally commonly using as cementation, its refractive index is about 1.52, and the OCA glue as being promoted to more high index of refraction needs to do special processing in technique, and higher with induced refractive index, technology difficulty is larger, and cost of manufacture is higher.
The refractive index of adhesive layer 306 is 1.52-1.79, is preferably 1.7.When choosing, first can consider according to the manufacture craft of OCA glue, are refractive indexes of common OCA glue when 1.52, minimum in cost of manufacture.If promote its refractive index further, difficulty can strengthen gradually, and when being increased to 1.79, continuing up to improve its difficulty will be very large, so comprehensive manufacture difficulty and input cost, 1.79 are the large scope of the limit.
When being preferably 1.7, except with manufacture craft difficulty and cost mutually outside the Pass, also can be correlated with, when nano-silver thread 801 density is large according to the density of nano-silver thread 801 on nano-silver thread conductive film 303, the refractive index optimum value of adhesive layer 306 is larger, is minimumly not less than 1.52.
In addition, also can be relevant to the material of base material 309, when the base material 309 of glass material has high reverse--bias characteristic, the refractive index optimum value of adhesive layer 306 is larger, is minimumly not less than 1.52.
Refer to Figure 16, the contact panel 40 of fourth embodiment of the invention comprises base material 401, conducts electricity micro-patterned layer 403, and high index of refraction adhesive layer 405, first electrode layer 407 and cover plate 409, its cover plate 409 contacts with touching object (pointing or pointer).Cover plate 409 comprise cover plate upper surface 4091 and cover plate lower surface 4093 (herein and described later " on " or D score be relative position, not absolute definition, can be understood as when upper surface is put upside down simultaneously and also become lower surface), cover plate upper surface 4091 is touching object contact-making surface, and cover plate lower surface 4093 can be used as attachment surface direct forming first electrode layer 407.Base material 401 comprises base material upper surface 4011 and base material lower surface 4013, and in the present embodiment, base material upper surface 4011 can be used as attachment surface direct forming and conducts electricity micro-patterned layer 403.Base material lower surface 4013 is for depending on display module.Can not doubt ground, as one distortion, conduct electricity micro-patterned layer 403 also can direct forming on base material lower surface 4013.
Described high index of refraction adhesive layer 405 is for being bonded as one by the first electrode layer 407 and the micro-patterned layer 403 of conduction, when the first described electrode layer 407 with when to conduct electricity between micro-patterned layer 403 except high index of refraction adhesive layer 405 without other insulation layer structures, high index of refraction adhesive layer 405 also has dielectricity, the first electrode layer 407 and the micro-patterned layer 403 of conduction is carried out insulation and arranges.High index of refraction adhesive layer 405 can select OCA glue.
In capacitive touch screen, the first electrode layer 407 is general near touch face, and micro-patterned layer 403 of conducting electricity is relatively away from touch face.Conduct electricity micro-patterned layer 403 and the first electrode layer 407 detect touch panel 40 touched time capacitance variations, with touch sensitive region or position of touch.
Refer to Figure 16, Figure 17 a, Figure 17 b, the first electrode layer 407 is the conductive layer of ITO material, and it is made by etching, photoetching, gold-tinted technique, and micro-patterned layer 403 of conducting electricity is made by the manufacture method of first embodiment of the invention conducting film.Be appreciated that the electrode pattern on the first electrode layer 407 comprises many first conductive electrodes 4051, micro-patterned layer 403 of conducting electricity comprises many second conductive electrodes 4053.On first conductive electrode 4051, electric conducting material is by traditional etching, photoetching, gold-tinted technique and to be all coated on each first conductive unit 4052.Electric conducting material on second conductive electrode 4053 by the manufacture craft of first embodiment of the invention only on the second conductive unit the grid groove region of 4056 be coated with nano-silver thread 801 electric conducting material.
Micro-patterned layer 403 of conducting electricity comprises multiple second conductive unit 4056 and multiple with the second conductive unit 4056 shape complementarity and electrical unconnected virtual (dummy) conductive unit 4059, and multiple second conductive unit 4056 forms the parallel equidistant distribution of the second conductive electrode 4053 in an axial direction (X-axis).Herein, the difference of Figure 17 a and Figure 17 b is, the conductive unit 4059 that Figure 17 a illustrates is be made up of solid line conductive grid, and the conductive unit 4059 that Figure 17 b illustrates is be made up of dotted line conductive grid.By aforementioned mesh design aspect, multiple virtual conductive unit 4059 cross arrangement, between the second conductive unit 4056, is formed supplementary to its gap.Visually, another vertical with the second conductive electrode 4053 can be distributed in axially (Y-axis); Therefore, with regard to observer, grid line distribution is whole and average.
The material of virtual conductive unit 4059 is identical with the material of the second conductive unit 4056, is nano-silver thread 801, and passes through manufacture method direct forming on base material 401 of first embodiment of the invention conducting film.
The setting of this virtual conductive unit 4059 makes the material of the zones of different at interface, conduction micro-patterned layer 403 place be consistent, which overcome when light is through the micro-patterned layer 403 of conduction, easily be subject to the impact of different interfaces material refractive index, cause touch control electrode pattern easily to appear the problem of the uneven grade with light luminance in one's mind, it makes contact panel 40 have preferably optical appearance namely visually to mate.
First electrode layer 407 of ITO material is provided with first conductive electrode 4051 staggered with multiple second conductive electrode 4053, this first conductive electrode 4051 comprises multiple first conductive unit 4052, and the projected position of this first conductive unit 4052 is corresponding with the virtual conductive unit 4059 of the micro-patterned layer 403 of conduction.Namely, conduct electricity the second conductive unit 4056 of micro-patterned layer 403 a parallel equidistant arrangement of axis (X-axis), first conductive unit 4052 of the first electrode layer 407 in another axially (Y-axis) parallel equidistant arrangement, and with the second conductive unit 4056 at view field's shape complementarity.
The shape of the first conductive unit 4052 and the second conductive unit 4056 can be illustrated rhombus, also can be triangle, quadrangle, hexagon, waveform or other irregular figures.
First electrode layer 407 of ITO material is made in upper strata near touch surface by the contact panel 40 of the present embodiment, micro-patterned layer 403 of conducting electricity is made in lower floor away from touch surface, conducts electricity micro-patterned layer 403 away from the haze issues that can solve nano-silver thread 801 after touch surface to a certain extent.One deck ITO like this, one deck nano-silver thread, one on the other, effectively can solve a nano-silver thread 801 mist degree difficult problem in use.
The manufacture craft of the first electrode layer 407 and the micro-patterned layer 403 of conduction, adopt manufacture method of the present invention and the spreading area of electric conducting material on the first electrode layer 407 first conductive unit 4052 that on conduction micro-patterned layer 403 second conductive unit 4056 of obtaining, the spreading area of electric conducting material will be far smaller than etching, photoetching, gold-tinted technique gained.In general, on the second conductive unit 4056, the spreading area of electric conducting material is only the 5%-10% of the spreading area of electric conducting material on the first conductive unit 4052, is even less than 5%.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within principle of the present invention, equivalent replacement and improvement etc. all should comprise within protection scope of the present invention.
Claims (12)
1. a manufacture method for conducting film, is characterized in that: this manufacture method comprises the following steps:
Step S1, provides a transparent base;
Step S2, described transparent base is coated with photoresist layer;
Step S3, described photoresist layer is produced the groove of corresponding pattern and utilizes ultraviolet lighting to solidify described photoresist layer;
Step S4, is coated with nano-silver thread solution in described groove; And
Step S5, solidifies nano-silver thread solution in described groove to form nano-silver thread conducting film.
2. the manufacture method of conducting film as claimed in claim 1, it is characterized in that: in step S4, described coating process is:
S41, is coated with to the second end by the first end of described photoresist layer; And
S42, continue S41, is coated with to described first end by described second end of described photoresist layer;
Described first end and described second end are two edge of described photoresist layer.
3. the manufacture method of conducting film as claimed in claim 1, is characterized in that: the coating method in described step S4 is slit extrusion coated (slotdiecoating).
4. the manufacture method of conducting film as claimed in claim 1, is characterized in that: in step S3, lattice is transferred to the groove described photoresist layer being formed patterning after utilizing the mould of a patterning to exert pressure with volume to volume processing procedure to described photoresist layer.
5. a manufacture method for contact panel, is characterized in that: this manufacture method comprises the following steps:
Step S6, adopt the manufacture method of the conducting film as described in any one of claim 1-4 to be formed on base material to have and conduct electricity the nano-silver thread conducting film of micro-pattern, the micro-pattern of described conduction comprises the conductive electrode on two axial directions;
Step S7, described have conduct electricity micro-pattern nano-silver thread conducting film above lay one with the transparent insulating layer of multiple through hole, each through hole described corresponds to the conductive electrode place of one of them axial direction, filled conductive material in each through hole described; And
Step S8, described transparent insulating layer is laid many wire-connectings, each through hole conducting described is connected.
6. a manufacture method for contact panel, is characterized in that: this manufacture method comprises the following steps:
Step S9, adopt the manufacture method of the conducting film as described in any one of claim 1-4 formed as described in nano-silver thread conducting film;
Step S10, one ITO conductive layer is provided, described ITO conductive layer has the plural ITO conductive electrode along an axial directional distribution, have the plural nano-silver thread conductive electrode along another axial directional distribution in described nano-silver thread conducting film, each ITO conductive electrode described and each nano-silver thread conductive electrode described are staggered; And
Step S11, fits described nano-silver thread conducting film and described ITO conductive layer.
7. a contact panel, comprising:
Transparent base,
Conduct electricity micro-patterned layer, the micro-patterned layer of described conduction is arranged on described transparent base, described conduction micro-pattern series of strata nano-silver thread conducting film, comprise groove and be filled in many nano-silver threads in described groove, described nano-silver thread overlaps formation conductive network mutually.
8. contact panel as claimed in claim 7, it is characterized in that: the micro-patterned layer of described conduction comprises plural nano-silver thread conductive electrode and the virtual nano-silver thread conductive electrode of plural number, described contact panel separately comprises the cover plate that has a visible surface and an inner surface, and an ITO conductive layer, ITO conductive layer is arranged on described inner surface, and described ITO conductive layer has the plural ITO conductive electrode along an axial directional distribution.
9. contact panel as claimed in claim 7, it is characterized in that: the line length of described nano-silver thread is 10 μm-300 μm, and wire diameter is less than 500nm, and length-width ratio is greater than 400, the degree of depth of described groove is less than 5 μm, and the width of described groove is 200nm-30 μm.
10. contact panel as claimed in claim 7, is characterized in that: the cross sectional shape of described groove is square, trapezoidal, semicircle or triangle.
11. contact panels as claimed in claim 7, is characterized in that: the area of section of described groove is less than 10% in the occupation rate of described substrate surface area.
12. 1 kinds of contact panels, comprising:
Transparent base;
Conduct electricity micro-patterned layer, the micro-patterned layer of described conduction is arranged on described transparent base, and described conduction micro-pattern series of strata nano-silver thread conducting film, comprises groove and be filled in many nano-silver threads in described groove;
Transparent insulating layer, to be layed in above the micro-patterned layer of described conduction and to be provided with multiple through hole, and each through hole described corresponds to the conductive electrode place of one of them axial direction, and filled conductive material in each through hole described; With
Many wire-connectings, are laid on described transparent insulating layer, and described multiple through hole conducting connects by described many wire-connectings.
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