CN105448329A - 静态随机存储器及其数据写入方法、输入输出电路 - Google Patents
静态随机存储器及其数据写入方法、输入输出电路 Download PDFInfo
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- CN105448329A CN105448329A CN201410308928.6A CN201410308928A CN105448329A CN 105448329 A CN105448329 A CN 105448329A CN 201410308928 A CN201410308928 A CN 201410308928A CN 105448329 A CN105448329 A CN 105448329A
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- Static Random-Access Memory (AREA)
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CN105448329A true CN105448329A (zh) | 2016-03-30 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112542195A (zh) * | 2020-12-30 | 2021-03-23 | 深圳市芯天下技术有限公司 | 减小非易失性闪存芯片面积的电路及非易失性闪存芯片 |
WO2021135427A1 (zh) * | 2019-12-31 | 2021-07-08 | 展讯通信(上海)有限公司 | 静态随机存储器及其故障检测电路 |
WO2023134002A1 (zh) * | 2022-01-17 | 2023-07-20 | 长鑫存储技术有限公司 | 存储器的检测方法、装置及模拟检测方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4935901A (en) * | 1987-02-23 | 1990-06-19 | Hitachi, Ltd. | Semiconductor memory with divided bit load and data bus lines |
US5936909A (en) * | 1997-01-29 | 1999-08-10 | Hitachi, Ltd. | Static random access memory |
CN102332296A (zh) * | 2011-07-15 | 2012-01-25 | 北京兆易创新科技有限公司 | 一种存储器电路的数据读取及数据写入方法 |
CN103187093A (zh) * | 2013-03-18 | 2013-07-03 | 西安华芯半导体有限公司 | 静态随机存储器及其存取控制方法及其位线预充电电路 |
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- 2014-06-30 CN CN201410308928.6A patent/CN105448329B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4935901A (en) * | 1987-02-23 | 1990-06-19 | Hitachi, Ltd. | Semiconductor memory with divided bit load and data bus lines |
US5936909A (en) * | 1997-01-29 | 1999-08-10 | Hitachi, Ltd. | Static random access memory |
CN102332296A (zh) * | 2011-07-15 | 2012-01-25 | 北京兆易创新科技有限公司 | 一种存储器电路的数据读取及数据写入方法 |
CN103187093A (zh) * | 2013-03-18 | 2013-07-03 | 西安华芯半导体有限公司 | 静态随机存储器及其存取控制方法及其位线预充电电路 |
Non-Patent Citations (1)
Title |
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杨之廉: "《集成电路导论》", 31 January 2012 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021135427A1 (zh) * | 2019-12-31 | 2021-07-08 | 展讯通信(上海)有限公司 | 静态随机存储器及其故障检测电路 |
CN112542195A (zh) * | 2020-12-30 | 2021-03-23 | 深圳市芯天下技术有限公司 | 减小非易失性闪存芯片面积的电路及非易失性闪存芯片 |
WO2023134002A1 (zh) * | 2022-01-17 | 2023-07-20 | 长鑫存储技术有限公司 | 存储器的检测方法、装置及模拟检测方法 |
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Effective date of registration: 20190315 Address after: 101399 Building 8-07, Ronghui Garden 6, Shunyi Airport Economic Core Area, Beijing Patentee after: Xin Xin finance leasing (Beijing) Co.,Ltd. Address before: 201203 Shanghai Pudong New Area Pudong Zhangjiang hi tech park, 2288 Chong Nong Road, exhibition center, 1 building. Patentee before: SPREADTRUM COMMUNICATIONS (SHANGHAI) Co.,Ltd. |
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Application publication date: 20160330 Assignee: SPREADTRUM COMMUNICATIONS (SHANGHAI) Co.,Ltd. Assignor: Xin Xin finance leasing (Beijing) Co.,Ltd. Contract record no.: X2021110000008 Denomination of invention: Static random access memory and its data writing method, input and output circuit Granted publication date: 20180821 License type: Exclusive License Record date: 20210317 |
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Effective date of registration: 20221020 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech park, Spreadtrum Center Building 1, Lane 2288 Patentee after: SPREADTRUM COMMUNICATIONS (SHANGHAI) Co.,Ltd. Address before: 101399 Building 8-07, Ronghui Garden 6, Shunyi Airport Economic Core Area, Beijing Patentee before: Xin Xin finance leasing (Beijing) Co.,Ltd. |