CN105428461B - The production technology and solar cell piece of middle low-concentration solar cell - Google Patents
The production technology and solar cell piece of middle low-concentration solar cell Download PDFInfo
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- CN105428461B CN105428461B CN201510960182.1A CN201510960182A CN105428461B CN 105428461 B CN105428461 B CN 105428461B CN 201510960182 A CN201510960182 A CN 201510960182A CN 105428461 B CN105428461 B CN 105428461B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 238000005516 engineering process Methods 0.000 title claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 71
- 239000010703 silicon Substances 0.000 claims abstract description 71
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 19
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 6
- 239000010432 diamond Substances 0.000 claims abstract description 6
- 210000004027 cell Anatomy 0.000 claims description 73
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 210000004483 pasc Anatomy 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims 2
- 239000002002 slurry Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 19
- 230000005611 electricity Effects 0.000 description 5
- 238000013082 photovoltaic technology Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 4
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of production technology of middle low-concentration solar cell and solar cell piece, multiple middle low-concentration solar battery cells are prepared on the 125mm*125mm or 156*156mm of production crystal silicon solar battery piece first, these solar-energy light-focusing battery units can be cut down from crystal silicon solar battery piece using diamond or laser.The production technology is improved in original common crystal silicon solar battery production technology, and then realizes using common crystal silicon solar battery production equipment and technique to produce the middle low-concentration solar cell that can be SMD of low cost.
Description
Technical field
The invention belongs to technical field of solar utilization technique, more particularly to a kind of production technology of middle low-concentration solar cell
And solar cell piece.
Background technology
The market share of crystal silicon solar battery has accounted for more than 80% in current photovoltaic system, and the crystal silicon sun is electric
Pond flat component is main by solar energy ultra-white glass, bonding agent（EVA）, solar cell piece（Monocrystalline or polycrystalline）, back veneer material with
And aluminum alloy frame passes through a series of technique（Such as：Sorting, welding, lamination, frame encapsulation etc.）Produce.Although brilliant at present
Silicon solar cell component price has declined, but still has larger gap compared with the conventional electric power cost such as thermoelectricity, water power, and wherein
One vital factor is exactly the price of cell piece.
The conventional solar module majority of tradition is flat board solar module, is carried out using common flat glass saturating
Light, the size needs of cell panel are identical with the size of flat glass could intactly to receive solar incident ray, the use of cell piece
Amount is very big, therefore the production cost of flat board solar module is very high.
The incident ray in larger area region is converged to by optical lens on small cell piece, so as to reduce electricity
The consumption of pond piece is referred to as condensation photovoltaic technology to reduce the photovoltaic technology of system cost.Condensation photovoltaic technology can be divided into high power and gather again
Light photovoltaic（HCPV, light concentrating times are more than 300 times）, in times condensation photovoltaic and low-concentration photovoltaic technology.High power concentrating photovoltaic skill
Battery is generally multijunction compound solar cell used in art, due to its complex manufacturing plus it is raw materials used for arsenic, germanium,
Therefore cost is very expensive for the rare elements such as indium, adds HCPV technologies and requires pole to the accuracy and heat-sinking capability of whole system
It is high therefore to constrain its development.And be typically crystal silicon solar battery for the battery used in middle low-concentration photovoltaic, and due to
Lack the battery exclusively for middle low-concentration photovoltaic Technology design at present, therefore the source that its battery is obtained is generally by right
156*156mm or 125*125mm battery carries out diamond or is cut by laser to obtain, and cuts and inevitably cause
The efficiency of solar cell declines, so as to result in the rise of whole component cost, constrains its development.Simultaneously because by right
Crystal silicon solar battery is cut and obtained, and crystal silicon solar battery positive and negative polarities are typically distributed across on two faces of solar cell
（General front is negative pole, and the back side is positive pole）, need that positive and negative polarities are carried out into connection in series-parallel with welding rod during welding, be for size
For 125*125mm or 156*156mm solar cell, it can be welded because size is larger by human weld or machinery, and
Said for the middle low-concentration solar cell for cutting into small size, then be easy to due to size gadget poor-performing damage or
There is the situation of failure welding, this reduces production efficiency and yields, considerably increase component cost.And if independent
Produce size smaller（5mm-30mm）Crystal silicon concentrator solar cell, then production cost can be very high, and technology difficulty is larger,
Because the size for the battery that current crystal silicon solar battery production firm is produced typically is 125*125mm or 156*156mm.
So, existing technique and production equipment how is better profited to produce the middle low-concentration solar cell of small size just very
It is necessary.
The content of the invention
It is an object of the invention to：For above-mentioned problem the common crystal silicon sun can be directly utilized there is provided one kind
The production technology of battery come produce can SMT pasters middle low-concentration solar cell production technology and solar cell piece.
The technical proposal of the invention is realized in this way：The production technology of middle low-concentration solar cell, it is characterised in that：
Comprise the following steps：
a）, first, multiple middle low-concentration solar battery cells, the multiple middle low-concentration are prepared on common silicon chip
Solar battery cell arranges that its specific preparation method is in ordinary silicon on-chip array：
Local passivation-light receiving surface the making herbs into wool of supplied materials silicon chip detection-laser boring, i.e. water conservancy diversion post holes-Wafer Cleaning-silicon chip-
Diffusion-remove phosphorosilicate glass-plasma etching-coated with antireflection film-silk-screen printing-Fast Sintering-testing, sorting；
Wherein, the laser boring is to be drilled in qualified supplied materials silicon chip on silicon chip beforehand through laser, is used to
Surface electrode is conducting to backplate, punching depth is that silicon chip matrix upper and lower surface insertion is defined；
Locally passivation is to carry out high temperature oxidation process to other regions outside silicon chip light area to the silicon chip, to be formed
Limit the compound passive area of photo-generated carrier；
, it is necessary to be printed on conductive silver paste on effective main grid line pattern of battery front side in screen printing process, and lead
The consumption of electric silver paste is it is required that conductive silver paste can be filled up completely with full water conservancy diversion post holes and realize the conducting of upper and lower surface electrode, finally
Form the solar cell piece with multiple middle low-concentration solar battery cells；
b）, then, using diamond or the mode of laser cutting, by multiple middle low-concentration sun on solar cell piece
Battery unit is cut down, and the path of cutting is in passive area, after cutting in each middle low-concentration solar battery cell
It is passive area around light area.
The production technology of middle low-concentration solar cell of the present invention, it is in the step a）In, used on silicon chip
The water conservancy diversion post holes aperture that laser is beaten is 0.4~2mm.
The production technology of middle low-concentration solar cell of the present invention, it is in the step a）In, on the silicon chip
The region being passivated includes main gate line and diversion column bore region, silicon chip edge region and middle low-concentration solar battery cell
Between compartment region.
The production technology of middle low-concentration solar cell of the present invention, it is in the step a）In, to the blunt of silicon chip
Change process is specially：Within the temperature range of 900~1250 degree, the mixed gas of oxygen and nitrogen is passed through in reaction chamber, its
The volume ratio of middle oxygen is controlled between 5%~50%, silicon face and oxygen generation layer of silicon dioxide film, oxygen molecule after film forming
The interface of silica and silicon is reached by diffusing through silicon dioxide layer, and is continued and pasc reaction, new dioxy is regenerated
SiClx layer, whole passivating process needs 60~90mins.
A kind of solar cell piece, it is characterised in that：The multiple middle low powers being arranged in including silicon chip and array on silicon chip are gathered
Light solar battery cell, the thin grid line corresponding part in front of each middle low-concentration solar battery cell is effective light area,
The thin grid line both sides in front are main gate line, and the luminous energy for being injected into effective light area is effectively converted to electric energy, opto-electronic conversion again
Electric current be collected by positive thin grid line after reach in the main gate line on both sides, it is equal along its length in the main gate line
It is even to be distributed with some diversion columns with conducting function, the diversion column through middle low-concentration solar battery cell matrix and
It is connected with the backplate A of middle low-concentration solar battery cell, the diversion column conducts the electric current that positive thin grid line is collected
On to corresponding backplate A, as a pole of middle low-concentration solar battery cell, the middle low-concentration solar cell list
First back side, the corresponding backplate B in effective light area as middle low-concentration solar battery cell an other pole, it is described in
The both positive and negative polarity of low-concentration solar battery cell is at the back side of middle low-concentration solar battery cell.
Solar cell piece of the present invention, spacer region is provided between its described backplate A and backplate B.
Solar cell piece of the present invention, the edge of its effective light area is passivation region, it is described in it is low
The upper and lower corresponding region of both sides main gate line is passivation region on times solar-energy light-focusing battery unit.
The present invention be prepared on the 125mm*125mm or 156*156mm of production crystal silicon solar battery piece it is multiple in it is low
Times solar-energy light-focusing battery unit, can be by these solar-energy light-focusing battery units from crystal silicon solar battery piece using diamond or laser
On cut down.The production technology is improved in original common crystal silicon solar battery production technology, and then is realized
The middle low-concentration solar cell that can be SMD of low cost is produced using common crystal silicon solar battery production equipment and technique.
Brief description of the drawings
Fig. 1 is the positive structure schematic of the present invention.
Fig. 2 is the structure schematic diagram of the present invention.
Fig. 3 is the structural representation of single middle low-concentration solar battery cell in the present invention.
Fig. 4 is Fig. 3 front view.
Fig. 5 is Fig. 3 rearview.
Fig. 6 is Fig. 3 side view.
Marked in figure：1 is silicon chip, and 2 be middle low-concentration solar battery cell, and 3 be effective light for the thin grid line in front, 4
Region, 5 be main gate line, and 6 be diversion column, and 7 be backplate A, and 8 be backplate B, and 9 be spacer region, and 10 be passivation region.
Embodiment
Below in conjunction with the accompanying drawings, the present invention is described in detail.
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Embodiment：A kind of production technology of middle low-concentration solar cell, at present, the production work of common crystal silicon solar battery
Skill process is mainly：Supplied materials silicon chip detection-Wafer Cleaning-surface wool manufacturing-diffusion-removes phosphorosilicate glass（PSG）- plasma is carved
Erosion-coated with antireflection film (PECVD)-silk-screen printing-Fast Sintering-testing, sorting, and the production technology of the present invention includes following step
Suddenly：
a）, first, multiple middle low-concentration solar battery cells, the multiple middle low-concentration are prepared on common silicon chip
Solar battery cell arranges that its specific preparation method is in ordinary silicon on-chip array：
Local passivation-light receiving surface the making herbs into wool of supplied materials silicon chip detection-laser boring, i.e. water conservancy diversion post holes-Wafer Cleaning-silicon chip-
Diffusion-remove phosphorosilicate glass-plasma etching-coated with antireflection film-silk-screen printing-Fast Sintering-testing, sorting.
Wherein, the laser boring is to be drilled in qualified supplied materials silicon chip on silicon chip beforehand through laser, is used to
Surface electrode is conducting to backplate, silicon chip matrix upper and lower surface insertion is is defined by punching depth, and aperture is 0.4~2mm.
Locally passivation is to carry out high temperature oxidation process to other regions outside silicon chip light area to the silicon chip, to be formed
Limiting the region being passivated on the compound passive area of photo-generated carrier, the silicon chip includes main gate line and diversion column porose area
The region of compartment between domain, silicon chip edge region and middle low-concentration solar battery cell；To the passivating process of silicon chip
Specially：Within the temperature range of 900~1250 degree, the mixed gas of oxygen and nitrogen, wherein oxygen are passed through in reaction chamber
Volume ratio control between 5%~50%, silicon face and oxygen, which generate oxygen molecule after layer of silicon dioxide film, film forming and passed through, to be expanded
The interface that silica and silicon are reached by silicon dioxide layer is dissipated, and is continued and pasc reaction, new silicon dioxide layer is regenerated,
Whole passivating process needs 60~90mins.
, it is necessary to be printed on conductive silver paste on effective main grid line pattern of battery front side in screen printing process, and lead
The consumption of electric silver paste is it is required that conductive silver paste can be filled up completely with full water conservancy diversion post holes and realize the conducting of upper and lower surface electrode, finally
Form the solar cell piece with multiple middle low-concentration solar battery cells.
b）, then, using diamond or the mode of laser cutting, by multiple middle low-concentration sun on solar cell piece
Battery unit is cut down, and the path of cutting is in passive area, after cutting in each middle low-concentration solar battery cell
It is passive area around light area, therefore cuts times optically focused sun electricity during the damage of caused passive area is not interfered with
Photoelectric transformation efficiency in the light-receiving area of pond, you can with the region thought in light-receiving area be with passive area around comparatively
It is an independent region.
As illustrated in fig. 1 and 2, a kind of solar cell piece, including silicon chip 1 and array be arranged in it is low in multiple on silicon chip 1
Times solar-energy light-focusing battery unit 2, in the present embodiment, the middle low-concentration solar battery cell that array is arranged on silicon chip are 36
It is individual.
As seen in figures 3-6, in each the thin corresponding part of grid line 3 in front of low-concentration solar battery cell 2 for effectively by
Light region 4, the thin both sides of grid line 3 in front are main gate line 5, and the luminous energy for being injected into effective light area 4 is effectively converted to electricity again
Can, the electric current of opto-electronic conversion is reached after being collected by positive thin grid line 3 in the main gate line 5 on both sides, in the main gate line 5
Some diversion columns 6 with conducting function are evenly distributed with along its length, and the diversion column 6 runs through the middle low-concentration sun
The matrix of battery unit 2 and it is connected with the backplate A7 of middle low-concentration solar battery cell 2, the diversion column 6 is by front
The electric current that thin grid line 3 is collected is conducted to corresponding backplate A7, as a pole of middle low-concentration solar battery cell 2,
For most of crystal silicon batteries, front is negative pole, therefore backplate A is negative pole, the middle low-concentration sun electricity
The back side of pool unit 2, the corresponding backplate B8 in effective light area 4 are used as other the one of middle low-concentration solar battery cell 2
Pole, for most of crystal silicon batteries, backplate B is positive pole, the backplate A7 and backplate B8 it
Between be provided with spacer region 9, the both positive and negative polarity of the middle low-concentration solar battery cell 2 is in middle low-concentration solar battery cell
2 back side so that this solar cell is highly susceptible to carrying out SMT paster processing, so as to effectively carry out concentrating component
Production, while the technique productions of this design are also very simple, can produce efficient optically focused sun electricity with less expensive cost
Pond.
Wherein, the edge of effective light area 4 is passivation region 10, the middle low-concentration solar battery cell
On 2 the upper and lower corresponding region of both sides main gate line 5 be passivation region 10, the path of cutting in passive area, this ensure that in
The efficiency of low-concentration solar cell, it is to avoid caused by the cutting factor generation of edge leakage current.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
Any modifications, equivalent substitutions and improvements made within refreshing and principle etc., should be included in the scope of the protection.
Claims (2)
1. in low-concentration solar cell production technology, it is characterised in that：Comprise the following steps：
a）, first, multiple middle low-concentration solar battery cells, the multiple middle low-concentration sun are prepared on common silicon chip
Battery unit arranges that its specific preparation method is in ordinary silicon on-chip array：
Local passivation-light receiving surface making herbs into wool-the diffusion of supplied materials silicon chip detection-laser boring, i.e. water conservancy diversion post holes-Wafer Cleaning-silicon chip
Phosphorosilicate glass-plasma etching-coated with antireflection film-silk-screen printing-Fast Sintering-testing, sorting is tied-gone to system；
Wherein, the laser boring is to be drilled in qualified supplied materials silicon chip on silicon chip beforehand through laser, to by table
Face electrode conduction is to backplate, and punching depth is that silicon chip matrix upper and lower surface insertion is defined；Bore position is arranged on each
The main gate line corresponding position on middle low-concentration solar battery cell both sides, and be uniformly distributed along the length direction of main gate line；
Locally passivation is to carry out high temperature oxidation process to other regions outside silicon chip light area to the silicon chip, to form limitation
The compound passive area of photo-generated carrier；The region being passivated on the silicon chip includes main gate line and diversion column bore region, silicon
The region of compartment, specific to the passivating process of silicon chip between piece fringe region and middle low-concentration solar battery cell
For：Within the temperature range of 900~1250 degree, the body of the mixed gas of oxygen and nitrogen, wherein oxygen is passed through in reaction chamber
Product ratio control is between 5%~50%, and oxygen molecule is logical by diffusion after silicon face generates layer of silicon dioxide film, film forming with oxygen
Cross silicon dioxide layer and reach the interface of silica and silicon, and continue and pasc reaction, regenerate new silicon dioxide layer, entirely
Passivating process needs 60~90mins；
, it is necessary to be printed on conductive silver paste on effective main grid line pattern of battery front side in screen printing process, and conductive silver
The consumption of slurry is ultimately formed it is required that conductive silver paste can be filled up completely with full water conservancy diversion post holes and realize the conducting of upper and lower surface electrode
Solar cell piece with multiple middle low-concentration solar battery cells；
b）, then, using diamond or the mode of laser cutting, by multiple middle low-concentration solar cells on solar cell piece
Unit is cut down, and the path of cutting is in passive area, the light after cutting in each middle low-concentration solar battery cell
It is passive area around region.
2. the production technology of middle low-concentration solar cell according to claim 1, it is characterised in that：In the step a）
In, the water conservancy diversion post holes aperture beaten on silicon chip with laser is 0.4~2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510960182.1A CN105428461B (en) | 2015-12-18 | 2015-12-18 | The production technology and solar cell piece of middle low-concentration solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510960182.1A CN105428461B (en) | 2015-12-18 | 2015-12-18 | The production technology and solar cell piece of middle low-concentration solar cell |
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| Publication Number | Publication Date |
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| CN105428461A CN105428461A (en) | 2016-03-23 |
| CN105428461B true CN105428461B (en) | 2017-08-04 |
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| CN106684171A (en) * | 2017-03-07 | 2017-05-17 | 成都聚合科技有限公司 | Dual I-section type large current resistant concentrating photovoltaic battery chip |
| CN106684170A (en) * | 2017-03-07 | 2017-05-17 | 成都聚合科技有限公司 | Hollow-square high-current-resistant concentrator photovoltaic battery chip |
| CN106847948A (en) * | 2017-03-07 | 2017-06-13 | 成都聚合科技有限公司 | A kind of pair of resistance to high current Condensation photovoltaic battery chip of I types |
| CN106653885A (en) * | 2017-03-07 | 2017-05-10 | 成都聚合科技有限公司 | Square high-current-resistant concentrated photovoltaic battery chip |
| CN106684169A (en) * | 2017-03-07 | 2017-05-17 | 成都聚合科技有限公司 | Single-I-type high-current-resistant concentrating photovoltaic battery chip |
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