CN105417491A - Calibration blackbody light source and preparation method thereof - Google Patents
Calibration blackbody light source and preparation method thereof Download PDFInfo
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- CN105417491A CN105417491A CN201510924564.9A CN201510924564A CN105417491A CN 105417491 A CN105417491 A CN 105417491A CN 201510924564 A CN201510924564 A CN 201510924564A CN 105417491 A CN105417491 A CN 105417491A
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- insulating barrier
- light source
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0069—Thermal properties, e.g. improve thermal insulation
Abstract
The invention provides a preparation method of a calibration blackbody light source. The preparation method comprises the following steps of providing a thin substrate and producing a first insulating layer on the surface of the substrate; producing a heating source on the surface of one side, far away from the substrate, of the first insulating layer, wherein the heating source comprises a lead wire region which can be electrically connected with an external circuit; producing a second insulating layer on the surface of one side, far away from the first insulating layer, of the heating source; producing a temperature sensor on the surface of one side, far away from the substrate, of the first insulating layer or the second insulating layer; forming a lead wire channel on one side, far away from the substrate, of the temperature sensor and forming a lead wire channel on one side, far away from the substrate, of the lead wire region, wherein each lead wire channel is exposed outwards and is electrically connected with the external circuit; and producing a blackbody film on the surface of one side, far away from the heating source, of the second insulating layer. The calibration blackbody light source is fast in warming and cooling rates; the required temperature stabilization time is just 5-10 min; the power consumption is just less than 50W for a light source chip with an area of 5 square centimeters when the radiation temperature is up to 500 DEG C; and the calibration blackbody light source is small in volume and is easily integrated at the interior of an imaging system.
Description
Technical field
The present invention relates to infrared technique field, particularly relate to the calibration blackbody light source of a kind of preparation method of calibration blackbody light source and integrated black matrix film, heating source, temperature sensor.
Background technology
Calibration blackbody light source is the important component part of infrared scanner, and the quality of its performance can have influence on the quality of infrared imaging.Wherein, the temperature control precision of calibration blackbody light source and temperature homogeneity are the keys that can calibration blackbody light source meet test demand.
Traditional calibration blackbody light source is primarily of 3 part compositions: radiation black matrix, electric heat source, temperature sensor.Radiation black matrix is generally make high emissivity coating on the substrate that thermal conductivity is higher, its slin emissivity closely 1; By around radiation black matrix or the electric heat source at the back side radiation black matrix is heated, make it give off the infrared light of some strength; Temperature sensor is attached near radiation black matrix, adopts the physical temperature of direct or indirect mode measuring radiation black matrix, feeds back in extraneous control circuit, thus adjustment heating power, make black matrix film reach target heating temperature gradually.
In order to make the temperature of radiating surface have higher uniformity, the main heat pipe that adopts heats it at the back side of radiation black matrix at present.Although heat pipe has programming rate and heating uniformity faster, but because volume, weight are larger, heating power consumption is very high, often reach hectowatt even to go up kilowatt, and because heat is large, radiating rate slowly, thus causes the real time of calibration blackbody temperature stabilization to need to reach 30-40 minute.
Although there is the infrared light supply chip of various pursuit low-power consumption, response fast in infrared sensing field, but because purposes is different, these chip structures are often designed to free standing structure film structure or other energy-saving structure, cause the temperature of radiating surface to be the distribution of obvious gradient, therefore cannot be used as calibration blackbody light source.
In view of this, be necessary to be improved the preparation method of existing calibration blackbody light source and calibration blackbody light source, to solve the problem.
Summary of the invention
The object of the present invention is to provide the calibration blackbody light source of a kind of preparation method of calibration blackbody light source and integrated black matrix film, heating source, temperature sensor.
For achieving the above object, the invention provides a kind of preparation method of calibration blackbody light source, comprise the steps: to provide sheet substrate, and make the first insulating barrier at described substrate surface; The surface deviating from the side of described substrate at described first insulating barrier makes heating source, and described heating source has and can realize with external circuit the lead district that is electrically connected; The surface deviating from the side of described first insulating barrier at described heating source makes the second insulating barrier; The surface deviating from the side of described substrate at the first insulating barrier or the second insulating barrier makes temperature sensor; The side making described temperature sensor and described lead district deviate from described substrate forms the lead channels being outwards exposed to realize with external circuit being electrically connected; The surface deviating from the side of described heating source at described second insulating barrier makes black matrix film.
As a further improvement on the present invention, the preparation method of described calibration blackbody light source also comprises the steps:
The surface deviating from the side of described first insulating barrier at described substrate makes the 3rd insulating barrier;
Make on the surface that described 3rd insulating barrier deviates from the side of described substrate and launch film, the emissivity of described transmitting film is lower than the emissivity of described substrate.
As a further improvement on the present invention, described substrate is sheet metal or the silicon chip of twin polishing.
As a further improvement on the present invention, described temperature sensor adopts Pt resistance.
As a further improvement on the present invention, described black matrix film and described temperature sensor are arranged side by side on described second insulating barrier; Remove the part-structure described second insulating barrier covering described lead district when forming described lead channels, all expose to make described temperature sensor and the lead district of described heating source and can be connected with external circuit.
As a further improvement on the present invention, described temperature sensor is arranged on described first insulating barrier, remove the part-structure described second insulating barrier covering described lead district and described temperature sensor when forming described lead channels, all expose to make described temperature sensor and the lead district of described heating source and can be connected with external circuit.
As a further improvement on the present invention, the area of described black matrix film is less than the area of described second insulating barrier.
As a further improvement on the present invention, the area of described black matrix film is less than or equal to the area of described second insulating barrier.
As a further improvement on the present invention, described temperature sensor is arranged on described first insulating barrier, is made in by described heating source on described first insulating barrier and does not arrange on the position of described temperature sensor; Described second insulating barrier is made on the position on described heating source except described lead district.
For achieving the above object, the present invention also provides a kind of calibration blackbody light source adopting the preparation method of described calibration blackbody light source to prepare.
The invention has the beneficial effects as follows: described black matrix film, heating source, temperature sensor are realized single-chip integration and form calibration blackbody light source by the preparation method of calibration blackbody light source of the present invention, give described black matrix film heating by heating source, make described black matrix thin film radiation go out the physical temperature of corresponding spectral signature; By the physical temperature of black matrix film described in temperature sensor measurement, be convenient to external circuit adjustment heating power, make black matrix film reach target heating temperature gradually, realize the accurate control of temperature.Meanwhile, owing to adopting flake structure, the thermal mass of described black matrix film is little, and heating, cooling speed is fast, and temperature stabilization times only needs 5-10 minute, for area at 5cm
2light source chip, when radiation temperature reaches 500 DEG C, power consumption is only at below 50W, and volume is little, is easy to be integrated in imaging system inside.
Accompanying drawing explanation
Fig. 1 is the substrat structure schematic diagram of calibration blackbody light source of the present invention.
Fig. 2 is the structural representation make the first insulating barrier on the surface of the substrate shown in Fig. 1 after.
Fig. 3 is the structural representation after the first insulating barrier shown in Fig. 2 deviates from the surface making heating source of the side of described substrate.
Fig. 4 is the structural representation after the side deviating from described first insulating barrier at the described heating source shown in Fig. 3 makes the second insulating barrier.
Fig. 5 is the structural representation make described temperature sensor on described second insulating barrier shown in Fig. 4 after.
Fig. 6 be remove on Fig. 5 basis described second insulating barrier cover the part-structure of described heating source after structural representation.
Fig. 7 is the structural representation make black matrix film on the surface that described second insulating barrier deviates from the side of described heating source on Fig. 6 basis after.
Fig. 8 is the structural representation of single calibration blackbody light source.
Detailed description of the invention
In order to make the object, technical solutions and advantages of the present invention clearly, describe the present invention below in conjunction with the drawings and specific embodiments.
The preparation method of please refer to the drawing 1 ~ Figure 7 shows that calibration blackbody light source of the present invention, comprises the steps:
There is provided thickness uniform slice-shaped substrate 1, and make certain thickness first insulating barrier 2 on described substrate 1 surface; The surface deviating from the side of described substrate 1 at described first insulating barrier 2 makes heating source 3, and described heating source 3 has and can realize with external circuit the lead district 31 that is electrically connected; The surface deviating from the side of described first insulating barrier 2 at described heating source 3 makes certain thickness second insulating barrier 4; The surface deviating from the side of described substrate 1 at described first insulating barrier 2 or the second insulating barrier 4 makes temperature sensor 5; The side making described temperature sensor 5 and described lead district 31 deviate from described substrate 1 forms the lead channels (non-label) being outwards exposed to realize with external circuit being electrically connected; Described second insulating barrier 4 makes black matrix film 6 with physical deposition, chemical deposition or electric plating method.
It should be noted that, when described temperature sensor 5 is provided with Wiring area (the non-label) that be connected with external circuit, " side making described temperature sensor 5 and described lead district 31 deviate from described substrate 1 forms the lead channels institute being outwards exposed to realize with external circuit being electrically connected " can be understood as " side making the Wiring area of described temperature sensor 5 or whole described temperature sensor 5 and described lead district 31 deviate from described substrate 1 forms the lead channels being outwards exposed to realize with external circuit being electrically connected ".
In addition, the preparation method of described calibration blackbody light source optionally can also comprise the steps: that the surface deviating from the side of described first insulating barrier 2 at described substrate 1 makes the 3rd insulating barrier (not shown); The transmitting film (not shown) of the surface making low-launch-rate of the side of described substrate 1 is deviated from, such as gold, titanium etc. at described 3rd insulating barrier; The thermal-radiating emissivity of described transmitting film lower than the emissivity of the material of described substrate own, thus effectively reduces the thermal-radiating loss in nonfunctional area.
Particularly, described substrate 1 adopts the slice-shaped substrate 1 that thickness is even, thermal conductivity is high, as sheet metal or the silicon chip such as copper sheet of twin polishing; The high consistency of described calibration blackbody light source physical temperature can be realized.
Described heating source 3 is metal electrode prepared by the materials such as Pt, can be designed to snakelike or block shape, heats to give described black matrix film 6 equably.
Described temperature sensor 5 adopts Pt resistance wire structure, utilizes Pt resistivity to vary with temperature and the character that changes, the temperature of reaction Pt resistance wire region, is convenient to external circuit and controls heating power, progressively reach the target temperature that described black matrix film 6 needs.
Be arranged in the embodiment of described second insulating barrier 4 at described temperature sensor 5, described temperature sensor 5 is arranged at described second insulating barrier 4 and deviates from the surface of the side of described heating source 3, described black matrix film 6 is arranged side by side on described second insulating barrier 4 with described temperature sensor 5, and described temperature sensor 5 is positioned at the edge of described black matrix film 6; Described black matrix film 6 does not cover described temperature sensor 5, and the area of described black matrix film 6 is less than the area of described second insulating barrier 4; Also namely described black matrix film 6 is crisscross arranged on the direction being parallel to described silicon chip substrate 1 place plane with described temperature sensor 5 and lead district 31, does not occur overlapping; Also namely described black matrix film 6, described temperature sensor 5 and described lead district 31 do not overlap along the orthographic projection of direction on described substrate 1 perpendicular to described substrate 1.
In this embodiment, because described temperature sensor 5 deviates from the side of described substrate 1 without other structures, when forming described lead channels, only need remove the part-structure described second insulating barrier 4 covering described lead district 31.
Below with reference to Fig. 1 ~ Fig. 8, take silicon chip as substrate 1, being arranged at by described temperature sensor 5 on described second insulating barrier 4 is example, illustrates the preparation method of calibration blackbody light source of the present invention:
As shown in Figure 1, provide the silicon chip of a slice single-sided polishing, be thinned to desired thickness by the non-polished surface of cmp method to its back side, and described non-polished surface is polished to minute surface;
As shown in Figure 2, with the burnishing surface growth SiO of PECVD method on described silicon chip
2layer forms the first insulating barrier 2;
As shown in Figure 3, the surface deviating from the side of described silicon chip with PVD deposition process at described first insulating barrier 2 makes platinum metal layer, and it is graphically formed heating source 3;
As shown in Figure 4, with PECVD method regrowth one deck SiO on the surface deviating from the side of described first insulating barrier 2 at described heating source 3
2layer forms the second insulating barrier 4;
As shown in Figure 5, deviate from the method making platinum metal layer that the surface of the side of described heating source 3 deposits with PVD at described second insulating barrier 4, and the graphical temperature sensor 5 forming resistive platinum wire;
As shown in Figure 6, the lead channels that can spill described lead district 31 is etched in the described edge wet method of the second insulating barrier 4 or the method for dry etching;
As shown in Figure 7, the surface deviating from the side of described heating source 3 at described second insulating barrier 4 makes the black matrix film 6 of the metal of one deck high emissivity by the method for physical deposition, described black matrix film 6, described temperature sensor 5 and described lead channels do not overlap along the orthographic projection of direction on described substrate 1 perpendicular to described substrate 1.Wherein, the sequence of steps making temperature sensor 5, making lead channels and making black matrix film 6 is not limit, and can exchange.
As shown in Figure 8, for cutting the structural representation of the single calibration blackbody light source of rear formation to silicon chip.
Certainly, also directly described second insulating barrier 4 can be made in other positions of described heating source 3 removing described lead district 31 by patterned shielding plate, the step removing described second insulating barrier 4 can be omitted.
Be arranged at the described embodiment of the first insulating barrier 2 and the difference of above-mentioned specific embodiment is at described temperature sensor 5: described heating source 3 does not cover described temperature sensor 5, described temperature sensor 5 is not limit with the production order of described heating source 3; Namely, time along direction orthographic projection perpendicular to described substrate 1, described temperature sensor 5 does not overlap with the orthographic projection of described heating source 3 on described substrate 1.Further, the orthographic projection of described temperature sensor 5 on described substrate 1 is positioned at the side of the orthographic projection of described heating source 3 on described substrate 1.
In this embodiment, need when forming described lead channels to remove the part-structure described second insulating barrier 4 covering described lead district 31 and described temperature sensor 5, the structure removed is more, namely the lead channels formed is relatively large, all exposes and can be connected with external circuit to make described temperature sensor 5 and the lead district 31 of described heating source 3.
Certainly, also directly described heating source 3 can be arranged at by patterned shielding plate the position described first insulating barrier 2 not being arranged described temperature sensor 5, second insulating barrier 4 is made in other positions except described lead district 31 on described heating source 3, can omit the step removing described second insulating barrier 4.
Shown in please refer to the drawing 8, a kind of calibration blackbody light source prepared for adopting the preparation method of above-mentioned calibration blackbody light source, comprise the sheet substrate 1 of high heat conduction, be located at the first insulating barrier 2 on described substrate 1, be located at the heating source 3 described first insulating barrier 2 deviated from the surface of the side of described substrate 1, be located at described heating source 3 and deviate from the second insulating barrier 4 on the surface of the side of described first insulating barrier 2, be located at described second insulating barrier 4 and deviate from black matrix film 6 on the surface of the side of described heating source 3, be located at described first insulating barrier 2 or the second insulating barrier 4 and deviate from temperature sensor 5 on the surface of the side of described substrate 1, described heating source 3 has and can realize with external circuit the lead district 31 that is electrically connected, and calibration blackbody light source also comprises the lead channels that the side making described temperature sensor 5 and described lead district 31 deviate from described substrate 1 is outwards exposed to realize with external circuit being electrically connected.
Particularly, described substrate 1 adopts the slice-shaped substrate 1 that thickness is even, thermal conductivity is high, as sheet metal or the silicon chip of twin polishing; The high consistency of described calibration blackbody light source physical temperature can be realized.
Described heating source 3 is metal electrode prepared by the materials such as Pt, can be designed to snakelike or block shape, heats to give described black matrix film 6 equably.
Described temperature sensor 5 adopts Pt resistance wire structure, utilizes Pt resistivity to vary with temperature and the character that changes, the temperature of reaction Pt resistance wire region, is convenient to external circuit and controls heating power, progressively reach the target temperature that described black matrix film 6 needs.
Described temperature sensor 5 is arranged side by side on described second insulating barrier 4 with described black matrix film 6, the side of described substrate 1 is deviated from without described second insulating barrier 4 along described lead district 31 on the direction perpendicular to described substrate 1, namely described second insulating barrier 4 does not cover described lead district 31, and the side that the lead district 31 of described temperature sensor 5 and described heating source 3 deviates from described substrate 1 is all outwards exposed to realize being electrically connected with external circuit; The area of black matrix film 6 described in this structure is less than the area of described second insulating barrier 4.
Described temperature sensor 5 is arranged side by side on described first insulating barrier 2 with described heating source 3, the side of described substrate 1 is deviated from all without described second insulating barrier 4 along described lead district 31 and described temperature sensor 5 on the direction perpendicular to described substrate 1, namely described second insulating barrier 4 does not cover described temperature sensor 5 and described lead district 31, described temperature sensor 5 all outwards exposes with the lead district 31 of described heating source 3 and can be connected with external circuit, and the area of black matrix film 6 described in this structure can be less than or equal to the area of described second insulating barrier 4.
Further, the side that side is provided with the 3rd insulating barrier, described 3rd insulating barrier deviates from described substrate 1 that described substrate 1 deviates from described first insulating barrier 2 is provided with transmitting film; The emissivity of described transmitting film is lower than the emissivity of described black matrix film 6.This transmitting film is the film with low-launch-rate, such as gold, titanium etc.
Described black matrix film 6, heating source 3, temperature sensor 5 are realized single-chip integration by described calibration blackbody light source, and utilize the sheet substrate 1 of high heat conduction to realize the high consistency of described calibration blackbody light source physical temperature.
Described heating source 3, temperature sensor 5 are connected with external circuit respectively by metal lead wire.Described heating source 3 is used for loading electrical power from external circuit, utilizes the heating of Joule effect realization to black matrix film 6, thus gives off the infrared light of corresponding spectral signature.The resistance of described temperature sensor 5 is measured by external circuit, the physical temperature of described black matrix film 6 can be reflected, thus proportion of utilization-Integrated Derivative control method (PID control method) adjusts heating power, make black matrix film 6 reach target heating temperature gradually, realize the accurate control to this temperature.
Owing to adopting flake structure, the thermal mass of described black matrix film 6 is little, and heating, cooling speed is fast, and temperature stabilization times only needs 5-10 minute, for area at 5cm
2light source chip, when radiation temperature reaches 500 DEG C, power consumption is only at below 50W, and volume is little, is easy to be integrated in imaging system inside.
In sum, calibration blackbody light source of the present invention, simultaneously integrated black matrix film 6, heating source 3, temperature sensor 5; There is the advantage that volume is little, lightweight, power consumption is little, uniformity is high, significantly can reduce volume and the energy consumption of scaling system, be easy to the In-flight calibration realizing infrared remote sensor, greatly improve the precision of equipment.
It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Thus, it will be appreciated by those skilled in the art that above-described embodiment only illustrative principle of the present invention and effect thereof, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (10)
1. a preparation method for calibration blackbody light source, comprises the steps:
Sheet substrate is provided, and makes the first insulating barrier at described substrate surface;
The surface deviating from the side of described substrate at described first insulating barrier makes heating source, and described heating source has and can realize with external circuit the lead district that is electrically connected;
The surface deviating from the side of described first insulating barrier at described heating source makes the second insulating barrier;
The surface deviating from the side of described substrate at the first insulating barrier or the second insulating barrier makes temperature sensor;
The side making described temperature sensor and described lead district deviate from described substrate forms the lead channels being outwards exposed to realize with external circuit being electrically connected;
The surface deviating from the side of described heating source at described second insulating barrier makes black matrix film.
2. the preparation method of calibration blackbody light source according to claim 1, is characterized in that: the preparation method of described calibration blackbody light source also comprises the steps:
The surface deviating from the side of described first insulating barrier at described substrate makes the 3rd insulating barrier;
Make on the surface that described 3rd insulating barrier deviates from the side of described substrate and launch film, the emissivity of described transmitting film is lower than the emissivity of described substrate.
3. the preparation method of calibration blackbody light source according to claim 1, is characterized in that: described substrate is sheet metal or the silicon chip of twin polishing.
4. the preparation method of calibration blackbody light source according to claim 1, is characterized in that: described temperature sensor adopts Pt resistance.
5. the preparation method of calibration blackbody light source according to claim 1, is characterized in that: described black matrix film and described temperature sensor are arranged side by side on described second insulating barrier; Remove the part-structure described second insulating barrier covering described lead district when forming described lead channels, all expose to make described temperature sensor and the lead district of described heating source and can be connected with external circuit.
6. the preparation method of calibration blackbody light source according to claim 1, it is characterized in that: described temperature sensor is arranged on described first insulating barrier, remove the part-structure described second insulating barrier covering described lead district and described temperature sensor when forming described lead channels, all expose to make described temperature sensor and the lead district of described heating source and can be connected with external circuit.
7. the preparation method of calibration blackbody light source according to claim 5, is characterized in that: the area of described black matrix film is less than the area of described second insulating barrier.
8. the preparation method of calibration blackbody light source according to claim 6, is characterized in that: the area of described black matrix film is less than or equal to the area of described second insulating barrier.
9. the preparation method of calibration blackbody light source according to claim 1, is characterized in that: described temperature sensor is arranged on described first insulating barrier, is made in by described heating source on described first insulating barrier and does not arrange on the position of described temperature sensor; Described second insulating barrier is made on the position on described heating source except described lead district.
10. the calibration blackbody light source adopting the preparation method of the calibration blackbody light source described in any one in claim 1 ~ 9 to prepare.
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Effective date of registration: 20190627 Address after: 215000 NW02-402, No. 99 Jinjihu Avenue, Suzhou Industrial Park, Jiangsu Province Co-patentee after: Beijing Zhenxing Measurement Test Institute Patentee after: SUZHOU NUOLIANXIN ELECTRONIC TECHNOLOGY CO., LTD. Co-patentee after: Beijing Research Institute of Space Mechanical & Electrical Technology Address before: 215000 NW02-402, No. 99 Jinjihu Avenue, Suzhou Industrial Park, Jiangsu Province Co-patentee before: Beijing Zhenxing Measurement Test Institute Patentee before: SUZHOU NUOLIANXIN ELECTRONIC TECHNOLOGY CO., LTD. |
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