CN105405912A - Silicon photoelectric detector chip with self-filtering function - Google Patents
Silicon photoelectric detector chip with self-filtering function Download PDFInfo
- Publication number
- CN105405912A CN105405912A CN201510928790.4A CN201510928790A CN105405912A CN 105405912 A CN105405912 A CN 105405912A CN 201510928790 A CN201510928790 A CN 201510928790A CN 105405912 A CN105405912 A CN 105405912A
- Authority
- CN
- China
- Prior art keywords
- chip
- detector chip
- interference filter
- detector
- self
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001914 filtration Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 title claims abstract description 22
- 238000001704 evaporation Methods 0.000 claims abstract description 7
- 230000008020 evaporation Effects 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000002452 interceptive effect Effects 0.000 abstract 1
- 239000005357 flat glass Substances 0.000 description 11
- 239000010410 layer Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention discloses a silicon photoelectric detector chip with a self-filtering function. The silicon photoelectric detector chip with the self-filtering function comprises a detector chip and is characterized in that an interfering filtering coating is arranged on the surface of the photosensitive area of the detector chip in an evaporation manner. The provided silicon photoelectric detector chip with the self-filtering function has the beneficial technical effects that a detector produced by adoption of the chip has a capability of enhancing resistance to bright background interference.
Description
Technical field
The present invention relates to a kind of photoelectric detector chip, particularly relate to a kind of silicon photodetector chip possessed from filtering functions.
Background technology
The spectral response range of silicon is 0.4 ~ 1.1 μm, and concrete peak value of response need depending on the thickness of chip light absorbing zone, usually between 0.8 ~ 0.95 μm, so silicon photodetector can absorb well to visible ray and near infrared light.
For improving silicon photodetector to the signal to noise ratio of a certain use wavelength, the filter system of respective wavelength just need be used to suppress silicon photodetector to the absorption of the light wave of other wavelength used beyond wavelength; The realization of this function, has normally been come by the optical system playing light-receiving effect.
When silicon photodetector is used for the field such as laser guidance, fuse, need silicon photodetector to possess the ability of anti-bright ambient interferences preferably, in prior art, be usually used in improving silicon photodetector and resist the means of bright ambient interferences ability to have:
1) thinner filter is set on the inner surface or outer surface of light window glass sheet.There is following defect in this solution: first, and owing to affecting by filter thickness, the light path light path between the photosurface of detector chip and external environment can change, and causes the optical characteristics off-design value of silicon photodetector; Secondly, due to the impact by filter transparency, when observing chip from optical window, chip surface pattern people can not see, when causing detector to be arranged on receipts welding system, chip center is difficult to identify, considerably increasing with chip center is that benchmark regulates technique contraposition when axiality and azimuth to manipulate difficulty; In addition, when filter is arranged on the inner surface of light window glass sheet, needs to consider the size of space between chip and light window glass sheet, likely need all to adjust accordingly whole encapsulating structure, extremely bother.
2) device package good after, at the surperficial evaporation interference light filtering film of light window glass sheet.Not only still there is the problem of aforesaid " chip surface pattern is not visible " in this solution, but also need the technical requirement considering pipe cap height: under some wavelength applications condition, pipe cap height has strict technical requirement, at this moment just can not at packaged light window glass surface evaporation interference light filtering film; If evaporation interference light filtering film on light window glass sheet in advance, then encapsulate, but the high temperature when sealing by fusing light window glass sheet and pipe cap can destroy interference light filtering film, causes interference light filtering film to lose efficacy; If do not adopt the sealing by fusing technique of glass, and adopt bonding light window glass sheet, the air-tightness of device is difficult to again be guaranteed.
3) increase the PN junction thickness of diffusion layer of photoelectric detector chip, namely increase " dead layer ".This can only reduce the absorption of chip to the shortwave part of visible ray, make short wavelength cutoff effective to about 0.6 μm, increase cut-off wavelength again, just need higher PN junction diffusion temperature or longer diffusion time, this again can to overall chip characteristic and to using the absorption of wavelength to cause adverse effect.
Summary of the invention
For the problem in background technology, the present invention proposes a kind of method preparing silicon photodetector chip from filtering functions.Its innovation is: surface, the photosensitive area evaporation of described detector chip has interference filter rete.
After adopting the present invention program, the interference filter rete playing filtering functions is directly formed at the surface, photosensitive area of detector chip, compared with plated film light window glass sheet, its thickness very thin (about one micron), on physical dimension and light path light path almost without impact, and interference filter rete is positioned at chip surface, can not affect by packaging technology, the transparency of light window glass sheet is not affected yet, as long as etch chip design and contraposition centre mark on interference filter rete, clearly can observe through light window glass sheet, extremely be convenient to regulate axiality and azimuth when detector is installed, in addition, because detector chip has carried filtering functions, consider from the angle of reduction means volume and weight, the optical system of light-receiving effect can be set no longer in a device, if still detector is combined with the optical system playing light-receiving effect, then can realize twice optical filtering, its to the degree of suppression of non-usage wavelength light wave be the product of degree of suppression corresponding to twice filtering process (such as, if optical system and the degree of suppression of interference filter rete to non-usage wavelength light wave are all 1%, then after twice optical filtering, the non-usage wavelength light wave be finally irradiated on detector chip only has ten thousand/of the non-usage wavelength light wave be irradiated in optical system), this resists the ability of bright ambient interferences by greatly strengthening detector.
Based on the known property of silicon photodetector chip, and consider that this programme is not changed other functional layers on chip except interference filter rete, therefore no longer the concrete structure of chip is repeated herein; The present invention had both been applicable to single quadrant detector chip, was also applicable to many quadrant detectors chip.It will be apparent to those skilled in the art that the general knowledge based on this area, when embody rule is of the present invention, also should etch electrode hole on interference filter rete, so that connection metal lead-in wire.
Preferably, described interference filter rete is made up of multilayer membranous layer of silicon oxide and titanium oxide layer, described membranous layer of silicon oxide and titanium oxide layer alternately laminated; In prior art, plating interference filter rete on the glass sheet, generally also adopts the mode of alternately laminated silicon oxide film and zirconium oxide film to make.
Preferably, described interference filter rete outer surface is etched with cross shape marks, and described cross shape marks is positioned at the geometric center of detector chip.During subsequent installation, cross shape marks is namely as indicia patterns, so that technical staff determines the geometric center of chip, meticulous contraposition installation is carried out in the position of detector.
Preferably, described interference filter rete outer surface is etched with detector chip dicing lane.When the present invention program being used for making various detector, dicing lane not only uses as mark line during dicing operation, and unlikelyly when scribing destroys interference light filtering film.
Advantageous Effects of the present invention is: provide a kind of silicon photodetector chip prepared from filtering functions, the detector adopting this chip manufacturing to go out, and has and strengthens anti-bright ambient interferences ability.
Accompanying drawing explanation
Fig. 1, section structure schematic diagram of the present invention;
Fig. 2, top view of the present invention;
In figure each mark corresponding to title be respectively: detector chip 1, interference filter rete 2, cross shape marks 2-1.
Embodiment
Possess the silicon photodetector chip from filtering functions, comprise detector chip 1, its structure is: surface, the photosensitive area evaporation of described detector chip 1 has interference filter rete 2.
Further, described interference filter rete 2 is made up of multilayer membranous layer of silicon oxide and titanium oxide layer, described membranous layer of silicon oxide and titanium oxide layer alternately laminated.
Further, described interference filter rete 2 outer surface is etched with electrode window through ray and cross shape marks, and described cross shape marks is positioned at the geometric center of detector chip 1.
Further, on described interference filter rete 2 outer surface, chip edge place is etched with dicing lane.
Claims (4)
1. possess the silicon photodetector chip from filtering functions, comprise detector chip (1), it is characterized in that: surface, the photosensitive area evaporation of described detector chip (1) has interference filter rete (2).
2. the silicon photodetector chip possessed from filtering functions according to claim 1, is characterized in that: described interference filter rete (2) is made up of multilayer membranous layer of silicon oxide and titanium oxide layer, described membranous layer of silicon oxide and titanium oxide layer alternately laminated.
3. the silicon photodetector chip possessed from filtering functions according to claim 1 and 2, it is characterized in that: described interference filter rete (2) outer surface is etched with cross shape marks, and described cross shape marks is positioned at the geometric center of detector chip (1).
4. the silicon photodetector chip possessed from filtering functions according to claim 3, is characterized in that: described interference filter rete (2) outer surface is etched with dicing lane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510928790.4A CN105405912A (en) | 2015-12-15 | 2015-12-15 | Silicon photoelectric detector chip with self-filtering function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510928790.4A CN105405912A (en) | 2015-12-15 | 2015-12-15 | Silicon photoelectric detector chip with self-filtering function |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105405912A true CN105405912A (en) | 2016-03-16 |
Family
ID=55471291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510928790.4A Pending CN105405912A (en) | 2015-12-15 | 2015-12-15 | Silicon photoelectric detector chip with self-filtering function |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105405912A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111969068A (en) * | 2020-07-22 | 2020-11-20 | 重庆鹰谷光电股份有限公司 | Silicon quadrant photoelectric detector for super-optimal double full application |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101692456A (en) * | 2009-10-16 | 2010-04-07 | 中国科学院上海技术物理研究所 | InGaAs liner array or area array detector with integrated filtering microstructure |
| CN103207424A (en) * | 2013-04-01 | 2013-07-17 | 中国船舶重工集团公司第七一七研究所 | Super wide band cut-off long-wave-pass filter optical film and production method thereof |
| CN203164461U (en) * | 2013-02-19 | 2013-08-28 | 东莞五方光电科技有限公司 | Infrared narrow-band bandpass optical filter |
| CN104969352A (en) * | 2013-01-29 | 2015-10-07 | Jds尤尼弗思公司 | A variable optical filter and a wavelength-selective sensor based thereon |
-
2015
- 2015-12-15 CN CN201510928790.4A patent/CN105405912A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101692456A (en) * | 2009-10-16 | 2010-04-07 | 中国科学院上海技术物理研究所 | InGaAs liner array or area array detector with integrated filtering microstructure |
| CN104969352A (en) * | 2013-01-29 | 2015-10-07 | Jds尤尼弗思公司 | A variable optical filter and a wavelength-selective sensor based thereon |
| CN203164461U (en) * | 2013-02-19 | 2013-08-28 | 东莞五方光电科技有限公司 | Infrared narrow-band bandpass optical filter |
| CN103207424A (en) * | 2013-04-01 | 2013-07-17 | 中国船舶重工集团公司第七一七研究所 | Super wide band cut-off long-wave-pass filter optical film and production method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111969068A (en) * | 2020-07-22 | 2020-11-20 | 重庆鹰谷光电股份有限公司 | Silicon quadrant photoelectric detector for super-optimal double full application |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103988062B (en) | Infrared sensor | |
| US10290795B2 (en) | Packaging method and semiconductor device | |
| US8461513B2 (en) | Method and apparatus for device with minimized optical cross-talk | |
| CN104846331B (en) | A kind of mask plate and laser package method applied to laser irradiation | |
| US9064982B2 (en) | Thin-film encapsulated infrared sensor | |
| GB2523841A (en) | Infrared sensor module | |
| US9612159B2 (en) | Infrared sensor and infrared sensor array | |
| US20150048470A1 (en) | Electromagnetic radiation micro device, wafer element and method for manufacturing such a micro device | |
| CN104157719A (en) | Wafer-level packaged infrared detector and preparation method thereof | |
| TWI646693B (en) | Optical sensor device | |
| CN107479191A (en) | A kind of the laser rectangle optical filter and design method of visible optical depth cut-off | |
| CN105405912A (en) | Silicon photoelectric detector chip with self-filtering function | |
| CN205335277U (en) | Possesses silicon photodetector chip from function that filters | |
| CN107611282B (en) | Encapsulating structure and display device | |
| US10115842B2 (en) | Semiconductor optical package and method | |
| JP2012520559A (en) | Semiconductor light receiving element and optoelectronic device | |
| CN112820781A (en) | Packaging structure and packaging method for integrated pixel lens of focal plane detector chip | |
| KR20190118837A (en) | Infrared detection sensor module | |
| KR101569350B1 (en) | Wafer Level Packaging Device | |
| CN110970512A (en) | Visible light wide-spectrum high-efficiency PIN photodiode and preparation method thereof | |
| CN102789993B (en) | Efficiently, the manufacture method of wide-angle, anti-interference, miniature laser receiver | |
| CN204271091U (en) | Novel four-quadrant optical power detecting chip | |
| KR20140137912A (en) | Electromagnetic wave absorber and fabrication method thereof | |
| TWI528533B (en) | Photo detectors and fabrication methods thereof | |
| CN207676946U (en) | A kind of encapsulating structure and organic luminescent device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160316 |