CN105393165A - 检测基板裂缝的方法、基板和检测电路 - Google Patents
检测基板裂缝的方法、基板和检测电路 Download PDFInfo
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- CN105393165A CN105393165A CN201480041262.0A CN201480041262A CN105393165A CN 105393165 A CN105393165 A CN 105393165A CN 201480041262 A CN201480041262 A CN 201480041262A CN 105393165 A CN105393165 A CN 105393165A
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- 239000000758 substrate Substances 0.000 title claims abstract description 316
- 238000001514 detection method Methods 0.000 title claims abstract description 107
- 238000000034 method Methods 0.000 title claims abstract description 94
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 70
- 239000011521 glass Substances 0.000 claims abstract description 55
- 238000012360 testing method Methods 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims description 59
- 239000002184 metal Substances 0.000 claims description 59
- 230000008569 process Effects 0.000 claims description 33
- 238000000059 patterning Methods 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 25
- 239000010408 film Substances 0.000 claims description 24
- 238000007689 inspection Methods 0.000 claims description 19
- 238000012545 processing Methods 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000003825 pressing Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 description 8
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910000809 Alumel Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical class [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- H—ELECTRICITY
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- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Liquid Crystal (AREA)
- Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
Abstract
一种检测基板裂缝的方法、基板和检测电路,包括:在TFT基板(1、2)的玻璃基板(11、21)上的边缘一周设置具有开口(121、221)的非闭合测试线(12、22),通过测量测试线(12、22)的导通或断开就能够判断TFT基板(1、2)边缘是否具有裂缝或崩块,从而能够避免漏检并提高检测效率,并且在TFT基板(1、2)组装成液晶模组或在液晶模组组装成整机后依然能够实现对液晶模组中TFT基板(1、2)边缘是否具有裂缝或崩块的检测。
Description
PCT国内申请,说明书已公开。
Claims (1)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2014/082254 WO2016008099A1 (zh) | 2014-07-15 | 2014-07-15 | 检测基板裂缝的方法、基板和检测电路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105393165A true CN105393165A (zh) | 2016-03-09 |
CN105393165B CN105393165B (zh) | 2019-06-11 |
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ID=55077802
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CN201480041262.0A Active CN105393165B (zh) | 2014-07-15 | 2014-07-15 | 检测基板裂缝的方法、基板和检测电路 |
Country Status (3)
Country | Link |
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US (1) | US9983452B2 (zh) |
CN (1) | CN105393165B (zh) |
WO (1) | WO2016008099A1 (zh) |
Cited By (6)
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CN106681075A (zh) * | 2017-03-23 | 2017-05-17 | 京东方科技集团股份有限公司 | 显示面板、阵列基板及其制造方法、检测电路 |
CN107863055A (zh) * | 2017-11-29 | 2018-03-30 | 武汉天马微电子有限公司 | 一种柔性基板及其状态检测方法、显示装置 |
CN110264891A (zh) * | 2019-07-18 | 2019-09-20 | 京东方科技集团股份有限公司 | 阵列基板、显示面板和显示装置 |
CN110608871A (zh) * | 2019-09-20 | 2019-12-24 | 京东方科技集团股份有限公司 | 像素检测电路、显示装置及检测方法 |
CN113889013A (zh) * | 2021-11-17 | 2022-01-04 | 合肥京东方光电科技有限公司 | 面板裂纹检测电路、方法、显示模组及装置 |
CN115078469A (zh) * | 2022-06-17 | 2022-09-20 | 福建华佳彩有限公司 | 一种玻璃基板缺陷检测方法及装置 |
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KR102454188B1 (ko) * | 2016-04-18 | 2022-10-13 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 검사 방법 |
CN105976744B (zh) * | 2016-06-24 | 2023-03-31 | 山东影响力智能科技有限公司 | 一种屏模组、电子设备及屏模组的微裂纹检测方法 |
TWI587258B (zh) | 2016-06-27 | 2017-06-11 | 友達光電股份有限公司 | 具有檢測電路的面板結構及面板檢測電路 |
US9947255B2 (en) * | 2016-08-19 | 2018-04-17 | Apple Inc. | Electronic device display with monitoring circuitry |
KR102631799B1 (ko) | 2016-11-11 | 2024-02-02 | 삼성디스플레이 주식회사 | 표시장치 및 그의 검사방법 |
EP3574373B1 (en) * | 2017-01-27 | 2020-10-21 | Merck Patent GmbH | Method for detecting breakage of a substrate of a switchable optical element and switchable optical device |
CN110211517B (zh) * | 2018-03-27 | 2021-03-16 | 京东方科技集团股份有限公司 | 显示基板及其检测方法、显示装置 |
EP3651304B1 (en) * | 2018-11-07 | 2021-04-07 | Siemens Gamesa Renewable Energy Innovation & Technology, S.L. | Method for performing a testing procedure of an electrical power system for a wind turbine and an electrical power system |
KR102572345B1 (ko) * | 2018-11-15 | 2023-08-29 | 삼성디스플레이 주식회사 | 표시 장치 및 그 검사 방법 |
KR20210044356A (ko) * | 2019-10-14 | 2021-04-23 | 삼성디스플레이 주식회사 | 표시 장치 |
CN110957329B (zh) * | 2019-11-29 | 2022-04-26 | 武汉华星光电技术有限公司 | 显示模组及显示模组的制作方法 |
KR20210090752A (ko) * | 2020-01-10 | 2021-07-21 | 삼성디스플레이 주식회사 | 표시패널 및 이의 제조 방법 |
CN112309880B (zh) * | 2020-02-17 | 2023-05-19 | 成都华微电子科技股份有限公司 | 芯片边缘损坏检测方法和电路 |
CN111508401A (zh) * | 2020-06-12 | 2020-08-07 | 京东方科技集团股份有限公司 | 裂纹检测电路、显示面板及裂纹检测方法 |
CN112230487A (zh) * | 2020-09-22 | 2021-01-15 | 江西兴泰科技有限公司 | 电子纸模组及检测其崩边暗裂的方法 |
CN112259587B (zh) * | 2020-10-21 | 2024-02-20 | 京东方科技集团股份有限公司 | 一种显示面板、制作方法、检测方法和显示装置 |
CN113205758A (zh) * | 2021-04-29 | 2021-08-03 | 京东方科技集团股份有限公司 | 显示模组、裂纹检测方法及显示装置 |
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US9983452B2 (en) | 2018-05-29 |
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CN105393165B (zh) | 2019-06-11 |
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