CN105390934B - Light based on phasmon enhancing enhances/modulates the device of electron emission - Google Patents
Light based on phasmon enhancing enhances/modulates the device of electron emission Download PDFInfo
- Publication number
- CN105390934B CN105390934B CN201510978943.6A CN201510978943A CN105390934B CN 105390934 B CN105390934 B CN 105390934B CN 201510978943 A CN201510978943 A CN 201510978943A CN 105390934 B CN105390934 B CN 105390934B
- Authority
- CN
- China
- Prior art keywords
- cathode
- anode
- electron emission
- field
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
- H01J19/02—Electron-emitting electrodes; Cathodes
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Cold Cathode And The Manufacture (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Discharge Lamps And Accessories Thereof (AREA)
Abstract
The invention discloses the device and method that a kind of light based on phasmon enhancing enhances/modulate electron emission, wherein device includes：One encapsulating structure has cathode and anode, wherein the anode is provided with through-hole, and the cathode is arranged in a conductive substrates, and the cathode is to have the field-transmitting cathode that metal Nano structure is constituted by cathode substrate and in cathode substrate adsorption；One power supply forms electric field between the cathode and anode；One light source sends out the laser that the through-hole through the anode is incident on the metal Nano structure of the cathode.Light of the present invention enhances/modulates electron emitting device, and the incident light that light source is sent out causes the electron emission for the field-transmitting cathode that the field emmision material of cathode substrate is compounded to form with metal Nano structure to enhance, and improves electronic transmitting efficiency.The local fields for adjusting field emmision material surface by changing intensity, wavelength, the polarization state of incident laser simultaneously, realize light modulation electron emission.
Description
Technical field
Light of the present invention enhances/electron emitting device is modulated, it can be applied to high-frequency electron device, ultrafast electron source, freely electricity
Sub- laser.
Background technology
For the Field Electron Emission of fixed material, the sizes of emissivities mainly by cathode material and vacuum level it
Between potential barrier, internal electron energy and extra electric field size determine, the energy of internal free electron is higher, and extra electric field is got over
Greatly, electronics is easier is tunneling to vacuum level.To obtain the electron source with modulating characteristic, can be modulated by electrical method
Applied voltage reaches the characteristic of modulation, but this kind of method is unable to reach super since the frequency characteristic of electricity device itself limits
The requirement of fast electron source；In addition to electricity modulation can also utilize the photonic nature of incident laser so that the electricity inside cathode material
Son absorbs photon energy so that self-energy improves, and improves the probability for being tunneling to vacuum level.Cathode in this kind of method at present
Material is concentrated mainly on alkali metal, and the materials such as noble metal, alkali metal is due to requiring encapsulation relatively high, noble metal cathode quantum effect
Rate is relatively low.
Invention content
The technical problem to be solved by the present invention is in view of the above shortcomings of the prior art, and provide a kind of raising electronics hair
Penetrate efficiency and can electron emission carry out the light enhanced based on phasmon of light modulation and enhance/modulate device and the side of electron emission
Method.
In order to solve the above technical problems, the technical solution adopted by the present invention is：
A kind of light based on phasmon enhancing enhances/modulates the device of electron emission, which is characterized in that including：
One encapsulating structure has cathode and anode, wherein the anode is provided with through-hole, and the cathode setting is in a conduction
On substrate, the cathode is by cathode substrate and the Flied emission the moon for having metal Nano structure to constitute in cathode substrate adsorption
Pole；
One power supply forms electric field between the cathode and anode；
One light source sends out the laser that the through-hole through the anode is incident on the metal Nano structure of the cathode.
Further include a collimation focus lens system, collimation focusing lens system setting the light source and encapsulating structure it
Between.
The cathode substrate is molded over using the method for silk-screen printing or chemical vapor deposition in the conductive substrates.
The material of the cathode substrate is carbon nanotube, graphene or semiconductor nano material.
The metal Nano structure covered using spraying, spin coating, drop, coat or electrophoresis is adsorbed in the cathode substrate.
The material of the metal Nano structure is gold, silver, copper, aluminium or titanium nitride, and the metal Nano structure shape is
Receive ball rice grain, nanometer rods, nanometer set square, nanometer star or nanocages.
The material of the conductive substrates is oxygen-free copper either silicon chip or ito glass.
A kind of method that base realization light enhances/modulate electron emission, it is characterised in that：Incident laser radiation cathode construction
When, the Localized field enhancement characteristic of metal Nano structure makes incident light impinge upon the local fields on field emmision material and improves, and and direct current
Bias field is superimposed common compressed transmissions material surface potential barrier to realize enhancing electron emission, at the same by adjust laser intensity,
Wavelength level-one polarization state changes the local fields of metal Nano structure and field emmision material surface, reaches modulation electron emission.
Light of the present invention enhances/modulates the device and method of electron emission, and the incident light that light source is sent out is shone by anode aperture
It is mapped to cathode surface, since metal Nano structure has local phasmon characteristic, one can be formed around metal Nano structure
A local fields much larger than incident illumination intensity, the local fields are compressed with the electric field collective effect of power supply between a cathode and an anode
The surface potential barrier of emissive material, the field-transmitting cathode for causing the field emmision material of cathode substrate to be compounded to form with metal Nano structure
Electron emission enhancing, improve electronic transmitting efficiency.Simultaneously because the Localized field enhancement and incident laser of metal Nano structure
Intensity, wavelength are close related to polarization state, therefore intensity, wavelength, polarization state by changing incident laser adjust field emmision material
The local fields on surface realize light modulation electron emission.
Description of the drawings
Fig. 1 is the structural schematic diagram of the present invention.
Figure label：1- conductive substrates, 2- cathodes, 3- light sources, 4- encapsulating structures, 5- collimation focusing lens systems, 6- sun
Pole.
Fig. 2 is metal nanoparticle Localized field enhancement schematic diagram.
Specific implementation mode
Technical scheme of the present invention is described in further detail below in conjunction with the accompanying drawings：
As shown in Figure 1, light of the present invention enhances/modulates the device of electron emission, including light source, encapsulating structure 4 and power supply,
Conductive substrates 1, cathode 2 and anode 6 are wherein packaged in encapsulating structure.
Conductive substrates 1 are that either ito glass utilizes silk-screen printing or chemical gas in conductive substrates 1 for oxygen-free copper, silicon chip
Mutually deposition method prepare one layer of carbon nanotube, the cathode substrate of graphene or semiconductor nano material, then using spraying,
Spin coating, drop cover, coat or electrophoresis obtains adsorption the field-transmitting cathode of metal Nano structure, and the material of nanostructure can
Think gold, silver, copper, aluminium or titanium nitride, nanostructure can be receive ball rice grain, nanometer rods, nanometer set square, nanometer star or
Person's nanocages, the size of nanostructure is between several nanometers to hundreds of nanometers.Surface is finally had to the conductive substrates 1 of cathode 2
Vacuum Package, which is carried out, with anode 6 forms encapsulating structure 4.
Incident laser is irradiated to by entering encapsulating structure 4 after collimation focusing lens system 5 from the anode 6 for being provided with through-hole
On cathode 2, due to the Localized field enhancement characteristic of metal Nano structure（Fig. 2）, it is much larger than being formed around field emmision material
The local electric field of incident field intensity enhances field emmision material with the bias field collective effect being added between anodic-cathodic
Electron emission.Voltage between fixed anodic-cathodic, changes intensity, wavelength or the polarization state condition of incident laser, will be real
Now light assist/modulate electron emission.
Embodiment
Embodiment 1：One layer of carbon nanotube is prepared using silk-screen printing technique in anaerobic copper substrate surfaces, then utilizes drop
Coating method forms composite cathode structure after Golden Triangle plate particle solution to be deposited on to carbon nano tube surface drying, by cathode construction
It is packaged according to Fig. 1, anode irradiation composite cathode surface of the laser by colimated light system and containing through-hole, due to silver nanoparticle three
The Localized field enhancement characteristic of gusset will form the local fields strong much larger than incident laser light field, carbon nanometer on composite cathode surface
Pipe will generate electron emission enhancing under local fields and the common potential barrier compression of applied voltage.
Embodiment 2：In the silicon chip surface that iron Raney nickel is contained on surface one layer is prepared using the method for chemical vapor deposition
Then carbon nano-tube film prepares gold nano grain in carbon nano tube surface using the method for vapor deposition annealing, forms composite cathode
Cathode construction is packaged by structure according to Fig. 1, and anode of the laser by colimated light system and containing through-hole irradiates composite cathode table
Face will form strong much larger than incident laser light field due to the Localized field enhancement characteristic of gold nano grain on composite cathode surface
Local fields, carbon nanotube will generate electron emission enhancing under local fields and the common potential barrier compression of applied voltage.
Embodiment 3：A layer graphene material is shifted on ITO Conducting Glass surface, then the method for spin coating is utilized to exist
One layer of gold nano star solution of graphene surface spin coating, drying form the composite cathode structure of graphene and gold nano star.By cathode
Structure is packaged according to Fig. 1, and anode irradiation composite cathode surface of the laser by colimated light system and containing through-hole is due to Jenner
The Localized field enhancement characteristic of meter Xing will form the local fields strong much larger than incident laser light field, graphene on composite cathode surface
Under local fields and the common potential barrier compression of applied voltage, electron emission will be generated.Change the intensity of incident laser, changes
The local electric field and graphene surrounding electric field of metal Nano structure, potential barrier compression happens change, can to electron emission into
Row modulation.
Claims (5)
1. a kind of light based on phasmon enhancing enhances/modulates the device of electron emission, which is characterized in that including：
One encapsulating structure has cathode and anode, wherein the anode is provided with through-hole, and the cathode is arranged in a conductive substrates
On, the cathode is to have the field-transmitting cathode that metal Nano structure is constituted by cathode substrate and in cathode substrate adsorption；
One power supply forms electric field between the cathode and anode；
One light source sends out the laser that the through-hole through the anode is incident on the metal Nano structure of the cathode.
2. the apparatus according to claim 1, which is characterized in that further include a collimation focus lens system, the collimation focusing
Lens system is arranged between the light source and encapsulating structure.
3. device according to claim 1 or 2, which is characterized in that the cathode substrate uses silk-screen printing or chemistry
The method of vapor deposition is molded in the conductive substrates.
4. device according to claim 3, which is characterized in that the material of the cathode substrate is semiconductor nano material.
5. device according to claim 3, which is characterized in that the material of the cathode substrate is carbon nanotube or graphite
Alkene.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510978943.6A CN105390934B (en) | 2015-12-24 | 2015-12-24 | Light based on phasmon enhancing enhances/modulates the device of electron emission |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510978943.6A CN105390934B (en) | 2015-12-24 | 2015-12-24 | Light based on phasmon enhancing enhances/modulates the device of electron emission |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105390934A CN105390934A (en) | 2016-03-09 |
| CN105390934B true CN105390934B (en) | 2018-10-26 |
Family
ID=55422909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510978943.6A Active CN105390934B (en) | 2015-12-24 | 2015-12-24 | Light based on phasmon enhancing enhances/modulates the device of electron emission |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105390934B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024551B (en) * | 2016-06-08 | 2018-09-21 | 国家纳米科学中心 | A kind of device generating ultrafast electronics using ultrafast ultra-intense laser excitation carbon nanotube |
| CN107275168B (en) * | 2017-06-06 | 2019-03-29 | 东南大学 | A kind of novel nano structure photocathode based on titanium nitride |
| CN108231507B (en) * | 2017-12-12 | 2020-06-23 | 东南大学 | Photocathode based on novel nano structure and preparation method thereof |
| CN109962645A (en) * | 2017-12-22 | 2019-07-02 | 浙江大学 | Surface phasmon induces solar energy photon to enhance hot electron power generation device |
| CN108281337B (en) * | 2018-03-23 | 2024-04-05 | 中国工程物理研究院激光聚变研究中心 | Photocathode and X-ray diagnosis system |
| CN109767960A (en) * | 2018-12-18 | 2019-05-17 | 中山大学 | A kind of excimer mediates the nano composite structure and preparation method of free electron transmitting |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6538256B1 (en) * | 2000-08-17 | 2003-03-25 | Applied Materials, Inc. | Electron beam lithography system using a photocathode with a pattern of apertures for creating a transmission resonance |
| JP5068206B2 (en) * | 2008-03-24 | 2012-11-07 | 富士フイルム株式会社 | Mass spectrometer |
| US9269546B2 (en) * | 2010-10-22 | 2016-02-23 | Applied Materials, Inc. | Plasma reactor with electron beam plasma source having a uniform magnetic field |
| US20130118906A1 (en) * | 2011-11-16 | 2013-05-16 | University Of Southern California | Method and system for enhancing catalytic and photocatalytic processes |
-
2015
- 2015-12-24 CN CN201510978943.6A patent/CN105390934B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN105390934A (en) | 2016-03-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105390934B (en) | Light based on phasmon enhancing enhances/modulates the device of electron emission | |
| Wu et al. | Enhanced performance of a graphene/GaAs self-driven near-infrared photodetector with upconversion nanoparticles | |
| Zhang et al. | Increasing photoluminescence quantum yield by nanophotonic design of quantum-confined halide perovskite nanowire arrays | |
| Xin et al. | White-blue electroluminescence from a Si quantum dot hybrid light-emitting diode | |
| JP5836866B2 (en) | Carbon electrode, method for producing the same, and photoelectric conversion element using the same | |
| TW202107829A (en) | Power generation element, power generation device, electronic apparatus, and power generation element manufacturing method | |
| WO2009004345A8 (en) | Energy conversion devices | |
| Wu et al. | Unique visible-light-assisted field emission of tetrapod-shaped ZnO/reduced graphene-oxide core/coating nanocomposites | |
| CN105895825A (en) | Packaging structure, packaging method and electronic device | |
| Ma et al. | Nanoantenna‐enhanced light‐emitting diodes: Fundamental and recent progress | |
| Chang-Jian et al. | Fabrication of carbon nanotube field emission cathodes in patterns by a laser transfer method | |
| CN105633190B (en) | Ultraviolet detector based on graphene wrapping SiC nanowires | |
| TW200425208A (en) | Manufacturing process of carbon nanotube field emission transistor | |
| Zhang et al. | Air‐Stable Violet Phosphorus/MoS2 van der Waals Heterostructure for High‐Responsivity and Gate‐Tunable Photodetection | |
| TW200306021A (en) | Amorphous diamond material and associated methods for the use and manufacture thereof | |
| TW201002127A (en) | Method for sealing an electronic device | |
| JP2010500719A (en) | Method of manufacturing field emission emitter electrode using nanowire alignment | |
| CN106159003B (en) | A kind of photovoltaic devices and a kind of method for producing photovoltaic effect | |
| JP2013157180A (en) | Method of manufacturing quantum dot film, and photoelectric conversion device | |
| CN203165903U (en) | Semiconductor detector | |
| CN109434299A (en) | Oled panel cutting method | |
| CN104576910A (en) | Radiating-improved semiconductor light-emitting device, manufacturing method of radiating-improved semiconductor light-emitting device and three-dimensional LED light source | |
| Patra et al. | Fabrication of windowless X-ray detector based on CdSe–CdS core shell QDs | |
| CN107604341A (en) | A kind of Ag and ZnO composite Nano wire materials based on light field irradiating luminescence and photoelectrochemical behaviour and preparation method thereof | |
| US20160240806A1 (en) | Devices for emitting and/or receiving electromagnetic radiation, and method for providing same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |