CN105375886B - Millimeter wave frequency band amplifier based on the feedback neutralisation of transmission line coupling effect voltage - Google Patents
Millimeter wave frequency band amplifier based on the feedback neutralisation of transmission line coupling effect voltage Download PDFInfo
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- CN105375886B CN105375886B CN201510856833.2A CN201510856833A CN105375886B CN 105375886 B CN105375886 B CN 105375886B CN 201510856833 A CN201510856833 A CN 201510856833A CN 105375886 B CN105375886 B CN 105375886B
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Abstract
The present invention discloses the millimeter wave frequency band amplifier based on the feedback neutralisation of transmission line coupling effect voltage, belongs to radio frequency and millimetre integrated circuit design field, including：One nmos pass transistor, the coupling line of the transmission line composition of two equal lengths, a feedback capacity, a capacitance, a biasing resistor.Wherein, the source ground connection of nmos pass transistor, the L1 ends connection of a transmission lines in the drain terminal and coupling line of nmos pass transistor, and it is connected to the output end of the circuit, the L2 ends connection power supply of the transmission line, another transmission lines are connected power supply with one end of L2 homonymies in coupling line, and one end of feedback capacity is connected with one end of L1 homonymies, the grid end of the other end connection nmos pass transistor of feedback capacity, and one end with capacitance and biasing resistor is connected simultaneously, the input of another termination circuit of capacitance, another termination bias voltage of biasing resistor.The amplifier can improve gain, improve stability, reduce noise and power consumption, reduce chip area, cost-effective.
Description
Technical field
The invention belongs to radio frequency and millimetre integrated circuit design field, more particularly to high-gain, low noise, low-power consumption with
The millimeter wave frequency band Amplifier Design of low cost.
Background technology
With CMOS (complementary metal-oxide-semiconductors：Complementary Metal-Oxide-
Semiconductor) the development of high-speed radiocommunication Circuits and Systems, and user is to the requirement such as communication quality and speed experience
Improve constantly, information exchange rates constantly increase, and especially indoor high-speed communication requirement becomes increasingly to be important.According to Mason
Prediction, by 2016, the 80% of global radio amount of communication data will be by indoor generation.In this context, WLAN
(Wireless Local Area Network:WLAN) rapid technological improvement, wherein with the series standards of IEEE 802.11 most
Representativeness, the 802.11ac and 802.11ad in the 5th generation, frequency continuation to millimeter wave frequency band, communication data are had evolved at present
Rate can reach several Gbps (Giga-bit-per-second) and more than, thus attracted academia and industrial quarters personage
Extensive concern.
Be operated in the amplifier of radio frequency millimeter wave band, it is necessary to meet low cost, low-power consumption while realize high-gain,
Low noise, to reduce the loss in high frequency of receiver front end system and noise coefficient.Conventional amplifiers are due to transistor grid leak
Parasitic capacitance CGDPresence, Miller effects are notable in high frequency, cause gain to decline, and introduce stability problem.Document《A
Transformer Neutralization Based 60GHz LNA in 65nm LP CMOS with 22dB Gain and
5.5dB NF》Transformer has been used to introduce Voltage Feedback neutralisation to offset Miller effects, but in radio frequency and millimeter wave ripple
Under section, not only quality factor are low with transformer for integrated inductor on piece, and self-resonance frequency limits working frequency range, and occupies very big
Area, cost is added, be unfavorable for the layout of domain.
The content of the invention
In view of this, it is an object of the invention to overcome the shortcomings of prior art, it is proposed that one kind is based on transmission line coupling
The millimeter wave frequency band amplifier of effect voltage feedback neutralisation is closed, amplifier of the invention increases caused by Miller effects are eliminated
Benefit and stability decline, and while ensureing gain, compared to prior art, can largely reduce using shared by transformer
Area, cost is reduced, and possess smaller noise coefficient and lower power consumption, so as to improve the performance of transceiver front ends.
A kind of millimeter wave frequency band amplifier based on the feedback neutralisation of transmission line coupling effect voltage proposed by the present invention, its
It is characterised by, the amplifier built-up circuit includes：One nmos pass transistor, the coupling of the transmission line composition of two equal lengths
Line, a feedback capacity, a capacitance, a biasing resistor, wherein, the source ground connection of nmos pass transistor, NMOS crystal
The first end L1 connections of first transmission lines in the drain terminal and coupling line of pipe, and the output end of the amplifier is connected to, this first
Second end L2 connection power supplys of transmission lines, the second end L2 homonymies of the second transmission lines and the first transmission lines in coupling line
One end L3 connection power supplys, and the second transmission lines are connected one end of feedback capacity with one end L4 of transmission line first end L1 homonymies,
The grid end of the other end connection nmos pass transistor of feedback capacity, and one end with capacitance and biasing resistor is connected simultaneously, every
The input of another termination amplifier of straight electric capacity, another termination bias voltage of biasing resistor.
The present invention may also include multiple amplifier circuits with amplifier circuit cascade, pass through between adjacent two-stage circuit
Matching network is connected.
Described is that the T junction being made up of three sections of transmission lines (T1, T2, T3) forms matching network；Wherein, the first transmission line T1
A termination previous stage amplifier circuit output end, other end one end with the second transmission line T2 and the 3rd transmission line T3 simultaneously
It is connected, the second transmission line T2 another termination, the input of the 3rd transmission line T3 another termination rear class first stage amplifier circuit.
The technical characterstic and beneficial effect of the present invention：
1st, using the coupling effect of two transmission lines, with reference to neutralisation electric capacity C2, positive feedback is formed, under millimere-wave band,
Counteract CGDIntroduced negative-feedback, on the premise of power consumption is not increased, gain is greatly improved, with not using ground technology phase
Than reducing power consumption, and transformer quality factor and self-resonant frequency in unrestricted and prior art if identical gain is realized.
Simultaneously as the flexibility of transmission line layout, compared with the coupling effect using inductance and transformer, can reduce chip area,
It is cost-effective.
2nd, on the premise of power consumption is not increased, circuit possesses more preferable noiseproof feature, can reduce low-noise amplifier
Noise coefficient.
3rd, two convenient, flexible transmission lines of laying out pattern can be used to utilize this group of coupling line as one group of coupling line for this hair
Coupling effect, the influence of Miller effects is eliminated by Voltage Feedback neutralisation.
Brief description of the drawings
Fig. 1 is the millimeter wave frequency band amplifier proposed by the present invention that neutralisation is fed back based on transmission line coupling effect voltage
Circuit diagram；
Fig. 2 is the three-level low-noise amplifier for being operated in 60GHz frequency ranges in the embodiment of the present invention based on the amplifier architecture
Circuit theory diagrams；
Fig. 3 is the S parameter simulation result of low-noise amplifier in the embodiment；
Fig. 4 is the noise coefficient simulation result of low-noise amplifier in the embodiment.
Embodiment
To make the purpose of the present invention, technical scheme and feature more explicit, below in conjunction with the accompanying drawings to specific embodiment party
Formula is described in detail and described.
Millimeter wave frequency band amplifier proposed by the present invention based on the feedback neutralisation of transmission line coupling effect voltage, is being eliminated
Gain caused by Miller effects and stability decline, and while ensureing gain, compared to prior art, can largely subtract
The small area using shared by transformer, cost is reduced, and possess smaller noise coefficient and lower power consumption, so as to improve
The performance of transceiver front ends.
Millimeter wave frequency band amplifier such as Fig. 1 institutes proposed by the present invention based on the feedback neutralisation of transmission line coupling effect voltage
Show, the amplifier built-up circuit includes：One nmos pass transistor MN, the coupling line XM of the transmission line composition of two equal lengths,
One feedback capacity C2, capacitance C1, a biasing resistor R1, wherein, nmos pass transistor MN source ground connection GND,
Drain terminal is connected with one end L1 of a coupling line XM wherein transmission lines, and is connected to the output end RFout of the amplifier, and this passes
Another transmission lines are connected power vd D with one end L3 of L2 homonymies in the other end L2 connections power vd D, coupling line XM of defeated line,
And feedback capacity C2 one end is connected with one end L4 of L1 homonymies, feedback capacity C2 other end connection nmos pass transistor MN grid
End, and one end with capacitance C1 and biasing resistor R1 is connected simultaneously, the input RFin of C1 another termination amplifier,
R1 another termination bias voltage Vbias.
The above-mentioned amplifier of the present invention can also be formed according to different application by the cascade of multiple amplifier circuits, adjacent two-stage electricity
It is connected between road by matching network.
A kind of embodiment of the present invention is the low-noise amplifier being made up of three-stage amplifier and inter-stage matching network, its
Circuit structure as shown in Fig. 2 amplifying circuit wherein at different levels be the present invention based on coupling line amplifier cascade, interstage matched
Conjugate impedance match is carried out using the T junction of transmission line with output end matching, input carries out noise matching with T junction.Physical circuit
It is described as follows：
The first order includes a nmos pass transistor MN1, the coupling line XM1 of the transmission line composition of two equal lengths, one
Feedback capacity C2, capacitance a C1, a biasing resistor R1；The annexation of each device is as follows：Nmos pass transistor MN1's
Source is grounded GND, and drain terminal is connected with one end L1 of a transmission lines among coupling line XM1, and is connected to the output end of this grade, should
Another transmission lines are connected electricity with one end L3 of L2 homonymies among the other end L2 connections power vd D, coupling line XM1 of transmission lines
Source VDD, and feedback capacity C2 one end is connected with one end L4 of L1 homonymies, the other end connection nmos pass transistor of feedback capacity
MN1 grid end, and one end with capacitance C1 and biasing resistor R1 is connected simultaneously, the input of C1 another termination circuit
RFin, R1 another termination bias voltage Vbias.
The second level：Including a nmos pass transistor MN2, the coupling line XM2 of the transmission line composition of two equal lengths, one
Feedback capacity C4, capacitance a C3, a biasing resistor R2；The annexation of each device is as follows：Nmos pass transistor MN2's
Source is grounded GND, and drain terminal is connected with one end L1 of a transmission lines in coupling line XM2, and is connected to the output end of this grade, this
Another transmission lines are connected power supply with one end L3 of L2 homonymies in the other end L2 connections power vd D, coupling line XM2 of transmission line
VDD, and feedback capacity C4 one end is connected with one end L4 of L1 homonymies, feedback capacity C4 other end connection nmos pass transistor
MN2 grid end, and one end with capacitance C3 and biasing resistor R2 is connected simultaneously, the input of C3 another this grade of termination,
R2 another termination bias voltage Vbias.
The third level：Including a nmos pass transistor MN3, the coupling line XM3 of the transmission line composition of two equal lengths, one
Feedback capacity C6, capacitance a C5, a biasing resistor R3.The annexation of each device is as follows：Nmos pass transistor MN3's
Source is grounded GND, and drain terminal is connected with one end L1 of a transmission lines in coupling line XM3, and is connected to the output end of the circuit
One end L3 of another transmission lines and L2 homonymies in RFout, the other end L2 connections power vd D, coupling line XM3 of the transmission lines
Power vd D is connected, and feedback capacity C6 one end is connected with one end L4 of L1 homonymies, the other end connection NMOS of feedback capacity is brilliant
Body pipe MN3 grid end, and one end with capacitance C5 and biasing resistor R3 is connected simultaneously, the input of C5 another this grade of termination
End, R3 another termination bias voltage Vbias.
Inter-stage matching network：The present embodiment includes two inter-stage matching networks, be formed using three sections of transmission lines it is T-shaped
Knot composition matching network.The matching network for being wherein connected to first and second grade of amplifying circuit is made up of three sections of transmission lines T1, T2, T3,
Wherein, the output end of a transmission line T1 termination first order, the other end are connected with transmission line T2 and T3 one end, the T2 other end
Connect VDD, the input of T3 another termination second level；The matching network of second and third grade of amplifying circuit is connected to by three sections of transmission
Line T4, T5, T6 are formed, wherein, the output end of a transmission line T4 termination second level, one end of the other end and transmission line T5 and T6
It is connected, the input of T5 another termination VDD, T6 another termination third level.
In order to verify the millimeter wave frequency band amplification proposed by the present invention based on the feedback neutralisation of transmission line coupling effect voltage
The correctness and actual effect of device, the present embodiment are directed to the three-level low noise for being operated in 60GHz millimere-wave bands using 65nm CMOS technologies
Acoustic amplifier has carried out simulating, verifying.The parameter of each element is listed by table 1 in the present embodiment.
Table 1
The S parameter of low-noise amplifier in above example and the simulation result of noise coefficient such as Fig. 3 and Fig. 4 are provided.
The S parameters at different levels (S21, S11, S22) that three curves in Fig. 3 represent the present embodiment low-noise amplifier respectively change with frequency
Curve, two curves in Fig. 4 represent the present embodiment noise coefficient NF respectively and Minimum noises coefficients NFmin changes with frequency
Curve.
From the results of view, it is proposed by the present invention based on transmission line coupling effect voltage feedback neutralisation technology realized it is low
The gain S21 of noise amplifier is up to 22dB, three dB bandwidth 5.2GHz at 60GHz, and noise coefficient minimum is 5.3dB, work(
Consume 23mW, and emulate in the low-noise amplifier stability factor KfMinimum is more than 3000, and the amplifier architecture is without bar
Part is stable.Compared to same class A amplifier A, the present embodiment has preferably noise coefficient, relatively low work(while high-gain is realized
Consumption, and due to the flexibility of transmission line wiring, the transformer of larger area is taken without introducing, so as to reduce area, is saved
About cost.Above example demonstrates the correctness and actual effect of the present invention.
In a word, the present invention is the foregoing is only to put with low noise under specific 60GHz radio-frequency ranges under specific CMOS technology
The checking example of big device, is not intended to limit the scope of the present invention.
Claims (3)
1. a kind of millimeter wave frequency band amplifier based on the feedback neutralisation of transmission line coupling effect voltage, it is characterised in that this is put
The built-up circuit of big device includes：One nmos pass transistor, the coupling line of the transmission line composition of two equal lengths, a feedback electricity
Hold, a capacitance, a biasing resistor, wherein, the source ground connection of nmos pass transistor, the drain terminal of nmos pass transistor is with coupling
The first end L1 connections of first transmission lines in line, and the output end of the amplifier is connected to, the second of first transmission lines
L2 connection power supplys are held, the second transmission lines are connected electricity with one end L3 of the second end L2 homonymies of the first transmission lines in coupling line
Source, and the second transmission lines are connected one end of feedback capacity with one end L4 of transmission line first end L1 homonymies, feedback capacity it is another
One end connects the grid end of nmos pass transistor, and one end with capacitance and biasing resistor is connected simultaneously, capacitance it is another
Terminate the input of the amplifier, another termination bias voltage of biasing resistor.
2. amplifier as claimed in claim 1, it is characterised in that also include multiple amplifiers with the circuits cascading of the amplifier
Circuit, it is connected by matching network between adjacent two-stage circuit.
3. amplifier as claimed in claim 2, it is characterised in that the matching network is to be made up of three sections of transmission lines T1, T2, T3
T junction composition；Wherein, the output end of a first transmission line T1 termination previous stage amplifier circuit, the other end is simultaneously with the
Two transmission line T2 and the 3rd transmission line T3 one end is connected, the second transmission line T2 another termination power vd D, the 3rd transmission line T3
Another termination rear class first stage amplifier circuit input.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510856833.2A CN105375886B (en) | 2015-11-30 | 2015-11-30 | Millimeter wave frequency band amplifier based on the feedback neutralisation of transmission line coupling effect voltage |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510856833.2A CN105375886B (en) | 2015-11-30 | 2015-11-30 | Millimeter wave frequency band amplifier based on the feedback neutralisation of transmission line coupling effect voltage |
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| CN105375886A CN105375886A (en) | 2016-03-02 |
| CN105375886B true CN105375886B (en) | 2018-02-27 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108736840A (en) * | 2018-05-04 | 2018-11-02 | 清华大学 | Millimeter wave amplifier match circuit based on differential coupling line |
| CN209375586U (en) * | 2018-11-30 | 2019-09-10 | 南京米乐为微电子科技有限公司 | A kind of ultra-low noise amplifier |
| WO2021240784A1 (en) * | 2020-05-29 | 2021-12-02 | 日本電信電話株式会社 | Amplification circuit |
| JP7444251B2 (en) * | 2020-05-29 | 2024-03-06 | 日本電信電話株式会社 | amplifier circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437820A (en) * | 2011-12-21 | 2012-05-02 | 苏州云芯微电子科技有限公司 | Clock amplifier circuit for lowering introduction of phase noise |
| CN202261240U (en) * | 2011-10-11 | 2012-05-30 | 中国电子科技集团公司第五十八研究所 | Charge transmission circuit for charge coupling production line ADC (analog-to-digital converter) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7269254B2 (en) * | 2002-05-21 | 2007-09-11 | Silicon Laboratories, Inc. | Integrated driver circuitry |
| GB2412260B (en) * | 2004-03-16 | 2007-09-26 | Wolfson Microelectronics Plc | Low noise op amp |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202261240U (en) * | 2011-10-11 | 2012-05-30 | 中国电子科技集团公司第五十八研究所 | Charge transmission circuit for charge coupling production line ADC (analog-to-digital converter) |
| CN102437820A (en) * | 2011-12-21 | 2012-05-02 | 苏州云芯微电子科技有限公司 | Clock amplifier circuit for lowering introduction of phase noise |
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Granted publication date: 20180227 Termination date: 20181130 |