CN105369250B - 一种基于纳米二氧化硅的电路板用蚀刻液 - Google Patents
一种基于纳米二氧化硅的电路板用蚀刻液 Download PDFInfo
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- CN105369250B CN105369250B CN201510952041.5A CN201510952041A CN105369250B CN 105369250 B CN105369250 B CN 105369250B CN 201510952041 A CN201510952041 A CN 201510952041A CN 105369250 B CN105369250 B CN 105369250B
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- hydrochloric acid
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- 238000005530 etching Methods 0.000 title claims abstract description 24
- 239000005543 nano-size silicon particle Substances 0.000 title claims abstract description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 48
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000000203 mixture Substances 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 17
- 239000012153 distilled water Substances 0.000 claims abstract description 15
- 235000006408 oxalic acid Nutrition 0.000 claims abstract description 12
- 239000004254 Ammonium phosphate Substances 0.000 claims abstract description 7
- 229910000148 ammonium phosphate Inorganic materials 0.000 claims abstract description 7
- 235000019289 ammonium phosphates Nutrition 0.000 claims abstract description 7
- 239000013530 defoamer Substances 0.000 claims abstract description 7
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000003381 stabilizer Substances 0.000 claims abstract description 7
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 claims description 16
- 239000002253 acid Substances 0.000 claims description 16
- 239000003729 cation exchange resin Substances 0.000 claims description 16
- 238000002156 mixing Methods 0.000 claims description 16
- 238000003756 stirring Methods 0.000 claims description 10
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 150000001768 cations Chemical class 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 4
- 230000008595 infiltration Effects 0.000 abstract description 4
- 238000001764 infiltration Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000002085 irritant Substances 0.000 description 1
- 231100000021 irritant Toxicity 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000013441 quality evaluation Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Paints Or Removers (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201510952041.5A CN105369250B (zh) | 2015-12-16 | 2015-12-16 | 一种基于纳米二氧化硅的电路板用蚀刻液 |
Applications Claiming Priority (1)
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CN201510952041.5A CN105369250B (zh) | 2015-12-16 | 2015-12-16 | 一种基于纳米二氧化硅的电路板用蚀刻液 |
Publications (2)
Publication Number | Publication Date |
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CN105369250A CN105369250A (zh) | 2016-03-02 |
CN105369250B true CN105369250B (zh) | 2017-12-08 |
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CN201510952041.5A Expired - Fee Related CN105369250B (zh) | 2015-12-16 | 2015-12-16 | 一种基于纳米二氧化硅的电路板用蚀刻液 |
Country Status (1)
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CN (1) | CN105369250B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107935400A (zh) * | 2017-11-24 | 2018-04-20 | 无锡南理工新能源电动车科技发展有限公司 | 一种基于纳米二氧化硅的显示屏玻璃基板用蚀刻液 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61124589A (ja) * | 1984-11-17 | 1986-06-12 | Daikin Ind Ltd | エツチング剤組成物 |
JP4954462B2 (ja) * | 2004-10-19 | 2012-06-13 | 株式会社フジミインコーポレーテッド | 窒化シリコン膜選択的研磨用組成物およびそれを用いる研磨方法 |
EP2507824A4 (en) * | 2009-11-30 | 2013-09-25 | Basf Se | METHOD FOR REMOVING A MATERIAL MASS STATE OF A SUBSTRATE AND CHEMICAL-MECHANICAL CLEANING AGENT FOR THIS PROCESS |
CN102277573B (zh) * | 2011-08-19 | 2013-02-06 | 绵阳艾萨斯电子材料有限公司 | 液晶显示屏用铬蚀刻液及其制备方法 |
CN103740280B (zh) * | 2013-12-31 | 2015-08-12 | 深圳市力合材料有限公司 | 一种适用于硅晶片边抛光的抛光组合物及其制备方法 |
CN104479559B (zh) * | 2014-12-10 | 2016-09-21 | 深圳市力合材料有限公司 | 一种适用于晶片边缘抛光的组合物及其制备方法 |
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2015
- 2015-12-16 CN CN201510952041.5A patent/CN105369250B/zh not_active Expired - Fee Related
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Effective date of registration: 20171107 Address after: 400056, Chongqing District, Banan City, South Village Red Star Village 12 clubs Applicant after: Chongqing master Technology Co., Ltd. Address before: 214000 Jiangsu province Wuxi chonganou Liberation Road 918-12B9 Applicant before: WUXI JIJIN ENVIRONMENTAL PROTECTION TECHNOLOGY CO., LTD. |
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Effective date of registration: 20180117 Address after: Chongqing District of Banan city bridge 401344 Solitaire Town Street No. 11 6-8 Patentee after: Liu Mengxiang Address before: 400056, Chongqing District, Banan City, South Village Red Star Village 12 clubs Patentee before: Chongqing master Technology Co., Ltd. |
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Effective date of registration: 20180625 Address after: 518104 7, floor 701, B building, Fuxin mansion, 58 industrial area, Post Pavilion community, Baoan District manhole street, Shenzhen, Guangdong, 58 Patentee after: Shenzhen City Dongsheng new electronic materials Co. Ltd. Address before: 401344 Jinqiao street, Jinqiao street, long town, Banan District, Chongqing City, 6-8, 6-8 Patentee before: Liu Mengxiang |
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Granted publication date: 20171208 Termination date: 20191216 |
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