CN105355725A - Gallium nitride semiconductor light emitting diode provided with incline quantum barrier structure, and producing method thereof - Google Patents
Gallium nitride semiconductor light emitting diode provided with incline quantum barrier structure, and producing method thereof Download PDFInfo
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- CN105355725A CN105355725A CN201410408878.9A CN201410408878A CN105355725A CN 105355725 A CN105355725 A CN 105355725A CN 201410408878 A CN201410408878 A CN 201410408878A CN 105355725 A CN105355725 A CN 105355725A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 114
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 110
- 230000004888 barrier function Effects 0.000 title claims abstract description 48
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 12
- 229910052738 indium Inorganic materials 0.000 claims abstract description 77
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 77
- 230000007423 decrease Effects 0.000 claims abstract description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 82
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 50
- 229910052733 gallium Inorganic materials 0.000 claims description 50
- 229910052757 nitrogen Inorganic materials 0.000 claims description 41
- 230000003247 decreasing effect Effects 0.000 claims description 16
- 150000004767 nitrides Chemical class 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 7
- 230000005012 migration Effects 0.000 abstract description 5
- 238000013508 migration Methods 0.000 abstract description 5
- 238000005036 potential barrier Methods 0.000 abstract description 5
- 230000005684 electric field Effects 0.000 abstract description 3
- 230000010287 polarization Effects 0.000 abstract description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 abstract description 2
- 239000002131 composite material Substances 0.000 abstract 1
- 230000008859 change Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Abstract
The invention discloses a gallium nitride semiconductor light emitting diode provided with an incline quantum barrier structure and a producing method thereof. The light emitting diode includes an N-type gallium nitride layer, a multi-quantum well structure layer, and a P-type gallium nitride layer, wherein the N-type gallium nitride layer, the multi-quantum well structure layer, and the P-type gallium nitride layer are successively stacked; the multi-quantum well structure layer includes a plurality of indium gallium nitride well layers and a plurality of indium gallium nitride barrier layers, wherein the plurality of indium gallium nitride well layers and the plurality of indium gallium nitride barrier layers are alternately stacked, and the mole content of indium in various indium gallium nitride barrier layers decreases progressively along the direction from the P-type gallium nitride layer to the N-type gallium nitride layer. The light emitting diode can be generated by adoption of epitaxial techniques such as an MOCVD technique. According to the technical scheme of the invention, a polarization electric field generated by polarization effect in quantum wells can be reduced, the composite efficiency of electron holes in the quantum wells can be improved, and the potential barrier of hole migration can be reduced, in such a way that electrons and holes can be more evenly distributed in the plurality of quantum wells, the leakage of the electrons can be effectively reduced, the luminous efficiency of the light emitting diode at a high current density can be improved, and then the problem of efficiency drop of the light emitting diode can be solved.
Description
Technical field
The present invention relates to a kind of light-emitting diode, particularly a kind of have the gallium nitride semiconductor light-emitting diode that inclination quantum builds structure, belongs to gallium nitride semiconductor device design and art of epitaxial growth.
Background technology
In gallium nitride based light emitting diode, because hole effective mass is large, cause charge carrier skewness in Multiple Quantum Well.The luminescence of usual Multiple Quantum Well is mainly derived from 1-2 quantum well of P-type layer.When injected current density is higher, light-emitting diode there will be the problem of decrease in efficiency.Also there is a polarization potential field in the light-emitting diode quantum well that C face grows, make the run-off the straight in trap of conduction band and valence band, electronics is spatially separated with hole, reduces the efficiency of radiation recombination in trap.
In specific words, when injected current density is higher, because hole is mainly distributed in 1-2 trap of P-type layer, the carrier density so in these traps can increase along with the increase of injected current density.The speed of auger recombination is directly proportional to 3 powers of carrier density, and so high carrier density can cause auger recombination to increase sharply, and such luminous efficiency can decline along with the increase of injected current density.Meanwhile, electronics reveals the decline that also can aggravate luminous efficiency.
Refer to shown in Fig. 1 and be traditional indium gallium nitrogen/nitride multi-quantum well conduction band schematic diagram, well layer 101 uses indium gallium nitrogen, and barrier layer 102 uses gallium nitride.In such an embodiment, owing to building the stop restriction to hole, hole is mainly only distributed in 1-2 quantum well of P type usually.Electronic barrier layer 103 is little with the band jump of Multiple Quantum Well result, and the barrier effect revealed electronics is limited.
Summary of the invention
For the deficiencies in the prior art, the object of the present invention is to provide a kind of gallium nitride semiconductor light-emitting diode with inclination quantum base structure, it is by the optimization of multi-quantum pit structure, reduce polarity effect, reduce the potential barrier of hole migration, make electronics and hole more uniformly be distributed in multiple quantum well, reduce the leakage of electronics, thus suppress high current density to inject the decline of lower combined efficiency, solve the problem of decrease in efficiency in light-emitting diode.
For realizing aforementioned invention object, the technical solution used in the present invention is as follows:
A kind of have the gallium nitride semiconductor light-emitting diode that inclination quantum builds structure, comprise the n type gallium nitride layer, multi-quantum pit structure layer and the P type gallium nitride layer that stack gradually, described multi-quantum pit structure layer comprises alternately laminated plural indium gallium nitrogen well layer and plural indium gallium nitrogen barrier layer, and in described multi-quantum pit structure layer, along the direction being pointed to n type gallium nitride layer by P type gallium nitride layer, in each indium gallium nitrogen barrier layer, the molar content of indium is successively decreased gradually.
Further, described multi-quantum pit structure layer comprises several to quantum well structure, and wherein every a pair quantum well structure comprises the indium gallium nitrogen barrier layer and an indium gallium nitrogen well layer that are cascading along the direction pointing to n type gallium nitride layer by P type gallium nitride layer.
Further, also electronic barrier layer is provided with between described multi-quantum pit structure layer and described P type gallium nitride layer.
As one of comparatively preferred embodiment, described in there is the gallium nitride semiconductor light-emitting diode that inclination quantum builds structure comprise the low temperature nitride gallium layer, undoped gallium nitride layer, n type gallium nitride layer, multi-quantum pit structure layer, aluminum gallium nitride electronic barrier layer, P type gallium nitride layer and the P type gallium nitride contact layer that set gradually along direction initialization.
Further, the gallium nitride semiconductor light-emitting diode described in inclination quantum base structure also comprises substrate.
Further, in described multi-quantum pit structure layer, the form that in each indium gallium nitrogen barrier layer, the molar content of indium is successively decreased comprise linear to successively decrease, Parabolicly to successively decrease, successively decreasing of step or successively decreasing of other form.
Further, described inclination quantum is built structure and is also comprised its derived structure, and such as, part quantum near n type gallium nitride layer builds use gallium nitride, and uses near the part quantum base of P type gallium nitride the structure of inclination.
A kind of have the preparation method that inclination quantum builds the gallium nitride semiconductor light-emitting diode of structure, comprise: on substrate, growth forms n type gallium nitride layer, multi-quantum pit structure layer and P type gallium nitride layer successively, described multi-quantum pit structure layer comprises alternately laminated plural indium gallium nitrogen well layer and plural indium gallium nitrogen barrier layer
Wherein, being formed in growth in the process of multi-quantum pit structure layer, also by regulating epitaxial growth parameters, the molar content of indium in each indium gallium nitrogen barrier layer in described multi-quantum pit structure layer being successively decreased gradually along the direction being pointed to n type gallium nitride layer by P type gallium nitride layer.
Further, described epitaxial growth parameters comprises barrier layer growth temperature, gallium source flux, indium source flux, chamber pressure etc. can regulate the growth parameter(s) of indium molar content.
Further, described indium source can be selected from but be not limited to trimethyl indium (TMIn).
Compared with prior art, advantage of the present invention comprises: utilize the multi-quantum pit structure tilted to reduce polarity effect, reduce the potential barrier of hole migration, electronics and hole is made more uniformly to be distributed in multiple quantum well, reduce the leakage of electronics, thus suppress high current density to inject the decline of lower combined efficiency, solve the problem of decrease in efficiency in light-emitting diode.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is that traditional indium gallium nitrogen/nitride multi-quantum well can be with schematic diagram;
Fig. 2 is a kind of structural representation typically with the gallium nitride light-emitting diode of inclination quantum base structure in the present invention;
Fig. 3 is that the Multiple Quantum Well that in the present invention, a kind of typical inclination quantum builds structure can be with schematic diagram, and in quantum base, the molar content version of indium is step;
Fig. 4 is that the Multiple Quantum Well that in the present invention, a kind of typical inclination quantum builds structure can be with schematic diagram, and in quantum base, the molar content version of indium is linear change;
Fig. 5 is the temperature and the TMIn flow control schematic diagram that utilize MOCVD to grow inclination quantum base structure among the present invention one typical embodiments.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.The example of these preferred implementations illustrates in the accompanying drawings.Shown in accompanying drawing and the embodiments of the present invention described with reference to the accompanying drawings be only exemplary, and the present invention is not limited to these execution modes.
At this, also it should be noted that, in order to avoid the present invention fuzzy because of unnecessary details, illustrate only in the accompanying drawings with according to the closely-related structure of the solution of the present invention and/or treatment step, and eliminate other details little with relation of the present invention.
As previously mentioned, in view of the defect of existing gallium nitride semiconductor light-emitting diode, inventor is through studying for a long period of time and putting into practice in a large number, technical scheme of the present invention is proposed, it is mainly by using the indium gallium nitrogen of gradual change component to build as quantum, by indium gallium nitrogen Multiple Quantum Well can be be designed to tilt structure, reduce the polarized electric field that in quantum well, polarity effect produces, increase the combined efficiency of electron hole in quantum well, reduce the potential barrier of hole migration, electronics and hole is made more uniformly to be distributed in multiple quantum well, reduce the leakage of electronics, thus realize the High Efficiency Luminescence of gallium nitride semiconductor light-emitting diode under high current density, solve the problem of decrease in efficiency in light-emitting diode.
Concretely, one aspect of the present invention provides a kind of gallium nitride semiconductor light-emitting diode with inclination quantum base structure, comprise the n type gallium nitride layer, multi-quantum pit structure layer and the P type gallium nitride layer that stack gradually, described multi-quantum pit structure layer comprises alternately laminated plural indium gallium nitrogen well layer and plural indium gallium nitrogen barrier layer, and in described multi-quantum pit structure layer, along the direction being pointed to n type gallium nitride layer by P type gallium nitride layer, in each indium gallium nitrogen barrier layer, the molar content of indium is successively decreased gradually.
Further, described multi-quantum pit structure layer comprises several to quantum well structure, and wherein every a pair quantum well structure comprises the indium gallium nitrogen barrier layer and an indium gallium nitrogen well layer that are cascading along the direction pointing to n type gallium nitride layer by P type gallium nitride layer.
Another aspect of the present invention provides a kind of preparation method with the gallium nitride semiconductor light-emitting diode of inclination quantum base structure, comprise: on substrate, growth forms n type gallium nitride layer, multi-quantum pit structure layer and P type gallium nitride layer successively, and described multi-quantum pit structure layer comprises alternately laminated plural indium gallium nitrogen well layer (hereinafter referred to as " well layer ") and plural indium gallium nitrogen barrier layer (hereinafter referred to as " barrier layer ");
Further, being formed in growth in the process of multi-quantum pit structure layer, also by regulating epitaxial growth parameters, the molar content of indium in each indium gallium nitrogen barrier layer in described multi-quantum pit structure layer being successively decreased gradually along the direction being pointed to n type gallium nitride layer by P type gallium nitride layer.
Wherein, in each indium gallium nitrogen barrier layer, successively decreasing of indium constituent content has multiple different mode, comprise linear to successively decrease, Parabolicly to successively decrease, the successively decreasing of step, and the successively decreasing of other form.
Further, described inclination quantum is built structure and is also comprised its derived structure, and such as, part quantum near n type gallium nitride layer builds use gallium nitride, and uses near the part quantum base of P type gallium nitride the structure of inclination.
Further, successively decreasing of described indium constituent content, can be realized by epitaxy technology means, as the adjustment of growth temperature in trap, and trimethyl indium flow, the adjustment etc. of flow velocity and chamber pressure, but be not limited to certain specific method.
As a typical embodiments of the present invention, wherein a kind of epitaxial structure with the gallium nitride semiconductor light-emitting diode of inclination quantum base structure is followed successively by from bottom to top: one deck low temperature nitride gallium layer, one deck undoped gallium nitride layer, one deck n type gallium nitride layer, several multi-quantum pit structure, one deck aluminum gallium nitride electronic barrier layer, one deck P type gallium nitride layer, one deck P type gallium nitride contact layer formed indium gallium nitrogen and gallium nitride; In the multi-quantum pit structure of described indium gallium nitrogen composition, in quantum well, the molar content of indium is constant, and in quantum base, the indium molar content of indium gallium nitrogen is built from the quantum base near P-type layer to the quantum near N-type layer and successively decreased gradually.
Consult Fig. 2-Fig. 4, in one more specifically case study on implementation, a kind of gallium nitride semiconductor light-emitting diode with inclination quantum base structure can be formed based on Sapphire Substrate 201, wherein, Sapphire Substrate 201 grows one deck low temperature nitride gallium layer 202, its thickness is about 20-30nm, in order to alleviate the stress that lattice mismatch brings.Low temperature nitride gallium layer 202 grows the gallium nitride layer 203 of one deck undoped, thickness is 1000-2500nm; Undoped gallium nitride layer 203 grows one deck n type gallium nitride layer 204, mix elemental silicon, doping content is about 1el8-le20 every cubic centimetre, and thickness is 1000-2500nm, provides electron injection.N type gallium nitride layer 204 is some quantum well structures 205 to being made up of indium gallium nitrogen, and wherein the thickness of trap is about 2.5-3nm, and the thickness at base is about 3-15nm, all undopes.Quantum well structure 205 is P type aluminum gallium nitride electronic barrier layer 206, mix magnesium metal, concentration is about 1el9-le21 every cubic centimetre, and thickness is about 20-40nm, in order to stop the high spilling electronics injected in lower quantum well.Be P type gallium nitride layer 207 on P-type electron barrier layer 206, mix magnesium metal, doping content is about le19-le20 every cubic centimetre, and thickness is about 100-200nm, injects in order to provide hole.Be a gallium nitride contact layer 208 on P type gallium nitride layer 207, be also P type, mix magnesium metal, doping content is le20 every cubic centimetre, and thickness is 10-30nm, and its effect provides high hole concentration, to form the ohmic contact of P type.
In described multi-quantum pit structure, well layer is indium gallium nitrogen, and barrier layer is also indium gallium nitrogen, and from P-type layer to N-type layer, in barrier layer, the molar content of indium from low to high.In band structure, form a multi-quantum pit structure tilted, near N-type region, the energy gap at base is wider, and near p type island region, the energy gap at base is narrower.The indium molar content of last barrier layer suitably should design according to the indium molar content of well layer, makes quantum well have enough restrictions.Such as, for blue-ray LED, if not the molar content of indium is 0.16(special instruction as follows in trap, all refer to degree), so the indium molar content of last barrier layer can be designed to 0.1.
Please continue to refer to Figure 3 shows that in the implementation case that a kind of 5 can be with schematic diagram to inclination Multiple Quantum Well, near P type near N-type, the numbering of barrier layer is followed successively by 301,302,303,304,305, and 306 is well layer, and 307 is electronic barrier layer.In quantum base, the molar content variation pattern of indium is step.Should be understood that, the present embodiment is only in order to illustrate a specific mode of indium molar content change in each base, and the present invention is not limited to the present embodiment.
Please continue to refer to Figure 4 shows that in the implementation case that another kind of 5 can be with schematic diagram to inclination Multiple Quantum Well, near P type near N-type, the numbering of barrier layer is followed successively by 401,402,403,404,405, and 406 is well layer, and 407 is electronic barrier layer.In quantum base, the molar content variation pattern of indium is linear change.Should be understood that, the present embodiment is only in order to illustrate a specific mode of indium molar content change in each base, and the present invention is not limited to the present embodiment.
By technical scheme of the present invention, not only can reduce the polarized electric field that in quantum well, polarity effect produces, the combined efficiency of electron hole in quantum well can be increased, reduce the potential barrier of hole migration, electronics and hole is made more uniformly to be distributed in multiple quantum well, effectively can also reduce the leakage of electronics, thus improve the luminous efficiency of light-emitting diode under high current density, solve the problem of decrease in efficiency in light-emitting diode.
The gallium nitride semiconductor light-emitting diode in the implementation case with inclination quantum base structure can be formed by multiple epitaxy method, the preparation process of this light-emitting diode will be described for the scheme of metallo-organic compound deposition growing epitaxial loayer below, it can comprise:
I) in Sapphire Substrate 201, growth thickness is about the low temperature nitride gallium layer 202 of 25nm, and growth temperature controls between 500-550 degree Celsius, and growth pressure is between 300-700mbar;
2) on low temperature nitride gallium layer 202, growth thickness is the undoped gallium nitride layer 203 of 1500nm, and growth temperature controls at 1000-1100 degree Celsius, and growth pressure is between 200-500mbar;
3) on undoped gallium nitride layer 203, growth thickness is the n type gallium nitride layer 204 of 2000nm, and growth temperature controls at 1000-1200 degree Celsius, and growth pressure is between 100-500Torr, and impurity is elemental silicon, and doping content is 5el8 every cubic centimetre;
4) on the gallium nitride layer 204 of N-type, grow the five pairs of quantum well 205 be made up of indium gallium nitrogen, wherein the thickness of indium gallium nitrogen well layer is 2.5nm, the thickness of indium gallium nitrogen barrier layer is 5nm, and in barrier layer 301,302,303,304,305, the molar content of indium is respectively 0.1,0.08,0.06,0.04,0.02;
Wherein, the change of indium molar constituent content is changed by the flow control of trimethyl indium, realizes the change of indium content in barrier layer.Refer to shown in Fig. 5,501 is the change of the flow of trimethyl indium in quantum well (well layer) growth course, and 502 is the change that quantum builds trimethyl indium flow in (barrier layer) growth course;
5) gallium nitride layer 206 of growing P-type in quantum well 205, thickness is 20nm, mixes magnesium metal, and doping content is 3e19 every cubic centimetre, and the molar content of aluminium is 0.2, and growth temperature is between 950-1000 degree Celsius, and growth pressure is between 150-400mbar;
6) gallium nitride layer 207 of growing P-type on gallium nitride layer 206, thickness is 100nm, mixes magnesium metal, and doping content is 3e19 every cubic centimetre, and growth temperature is 900-1000 degree Celsius, and growth pressure is between 100-500mbar;
7) on the gallium nitride layer 207 of P type, grow contact layer gallium nitride 208, thickness is 20nm, mixes magnesium metal, and doping content is le20 every cubic centimetre, and growth temperature is between 800-900 degree Celsius, and growth pressure is between 100-400mbar.
It is pointed out that above-described embodiment is only and technical conceive of the present invention and feature are described, its object is to person skilled in the art can be understood content of the present invention and implement according to this, can not limit the scope of the invention with this.All equivalences done according to Spirit Essence of the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (9)
1. one kind has the gallium nitride semiconductor light-emitting diode that inclination quantum builds structure, comprise the n type gallium nitride layer, multi-quantum pit structure layer and the P type gallium nitride layer that stack gradually, described multi-quantum pit structure layer comprises alternately laminated plural indium gallium nitrogen well layer and plural indium gallium nitrogen barrier layer, it is characterized in that in described multi-quantum pit structure layer, along the direction being pointed to n type gallium nitride layer by P type gallium nitride layer, in each indium gallium nitrogen barrier layer, the molar content of indium is successively decreased gradually.
2. according to claim 1 have the gallium nitride semiconductor light-emitting diode that inclination quantum builds structure, it is characterized in that described multi-quantum pit structure layer comprises several to quantum well structure, wherein every a pair quantum well structure comprises the indium gallium nitrogen barrier layer and an indium gallium nitrogen well layer that are cascading along the direction pointing to n type gallium nitride layer by P type gallium nitride layer.
3. according to claim 1 and 2 have the gallium nitride semiconductor light-emitting diode that inclination quantum builds structure, it is characterized in that also being provided with electronic barrier layer between described multi-quantum pit structure layer and described P type gallium nitride layer.
4. according to claim 1 have the gallium nitride semiconductor light-emitting diode that inclination quantum builds structure, it is characterized in that it comprises low temperature nitride gallium layer, undoped gallium nitride layer, n type gallium nitride layer, multi-quantum pit structure layer, aluminum gallium nitride electronic barrier layer, P type gallium nitride layer and the P type gallium nitride contact layer set gradually along direction initialization.
5. the gallium nitride semiconductor light-emitting diode with inclination quantum base structure according to any one of claim 1-2,4, is characterized in that it also comprises substrate.
6. the gallium nitride semiconductor light-emitting diode with inclination quantum base structure according to any one of claim 1-2,4, it is characterized in that in described multi-quantum pit structure layer, the form that in each indium gallium nitrogen barrier layer, the molar content of indium is successively decreased comprises linear to successively decrease, Parabolicly to successively decrease or the successively decreasing of step.
7. the gallium nitride semiconductor light-emitting diode with inclination quantum base structure according to any one of claim 1-2,4, it is characterized in that described inclination quantum is built structure and also comprised its derived structure, part quantum such as near n type gallium nitride layer builds use gallium nitride, and uses near the part quantum base of P type gallium nitride the structure of inclination.
8. one kind has the method for making that inclination quantum builds the gallium nitride semiconductor light-emitting diode of structure, comprise: on substrate, growth forms n type gallium nitride layer successively, multi-quantum pit structure layer and P type gallium nitride layer, described multi-quantum pit structure layer comprises alternately laminated plural indium gallium nitrogen well layer and plural indium gallium nitrogen barrier layer, it is characterized in that: formed in the process of multi-quantum pit structure layer in growth, by regulating epitaxial growth parameters, the molar content of indium in each indium gallium nitrogen barrier layer in described multi-quantum pit structure layer is successively decreased gradually along the direction being pointed to n type gallium nitride layer by P type gallium nitride layer.
9. according to claim 7 have the method for making of gallium nitride semiconductor light-emitting diode that inclination quantum builds structure, it is characterized in that described epitaxial growth parameters comprises the growth temperature of barrier layer, gallium source flux, indium source flux or chamber pressure.
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| CN108649108A (en) * | 2018-05-15 | 2018-10-12 | 芜湖德豪润达光电科技有限公司 | Mqw light emitting layer and light emitting diode and preparation method thereof |
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| CN112436082A (en) * | 2020-10-31 | 2021-03-02 | 扬州大学 | LED epitaxial structure for improving distribution uniformity of current carriers in luminous zone and growth method thereof |
| CN114038961A (en) * | 2021-10-26 | 2022-02-11 | 重庆康佳光电技术研究院有限公司 | Light emitting diode and display panel |
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