CN105336714B - Non-solder structural semiconductor module and preparation method - Google Patents
Non-solder structural semiconductor module and preparation method Download PDFInfo
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- CN105336714B CN105336714B CN201510674136.5A CN201510674136A CN105336714B CN 105336714 B CN105336714 B CN 105336714B CN 201510674136 A CN201510674136 A CN 201510674136A CN 105336714 B CN105336714 B CN 105336714B
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Abstract
The invention discloses a kind of non-solder structural semiconductor module and preparation method, semiconductor module includes the upper modular lattice screen stacked successively, fixed grating screen, semiconductor element and lower modular lattice screen, the semiconductor element is embedded in the grate opening of fixed grating screen, upper, thermal jet is scribbled in the through hole of lower modular lattice screen melts affixed metal powder layer with semiconductor element end face, and upper flow deflector and lower flow deflector are formed respectively, the present invention utilizes fixed grating screen arrangement semiconductor element, and set in fixed grating screen both sides, lower modular lattice screen, metal dust is sprayed into the metal powder layer to be formed and be melted with semiconductor element end face, conventional metals flow deflector and soldering tin material are eliminated at all, it effectively prevent the Module Fail because of caused by solder high temperature ageing, simplify manufacture craft, reduce the pollution to environment, improve module heat conduction efficiency.
Description
Technical field
The present invention relates to a kind of semiconductor module, more particularly to a kind of good and environmentally friendly non-solder structure of heat-resisting quantity
Semiconductor module and preparation method.
Background technology
With expanding economy, the progress of society, people propose higher and higher requirement to the energy and environmental protection, collect all
The energy that can be collected turns into the urgent problem that current mankind faces, and thermoelectric cooling module can be generated electricity by the temperature difference,
Many occasions can be generated electricity using waste gas, waste heat.But due to the welding procedure of existing semiconductor module, typically using middle temperature
Soldering, can cause the temperature resistant range of semiconductor module only between -20 DEG C~200 DEG C, such as be used in high temperature applicationss, then scolding tin is easy
Aging and cause whole semiconductor module to fail, it is impossible to meet use requirement, also soldering tin technique also easily influences environment.
The content of the invention
Influenceed present invention mainly solves existing semiconductor module by soldering process and cause that heat-resisting quantity is poor, can not adapt to height
Thermal field closes the technical problem used；There is provided a kind of heat-resisting quantity is good and environmentally friendly non-solder structural semiconductor module and making side
Method.
In order to solve above-mentioned technical problem, the present invention mainly uses following technical proposals：
A kind of preparation method of non-solder structural semiconductor module of the present invention, its step is as follows：
1) first sheet material is cut by technological requirement, modular lattice screen, lower modular lattice screen and fixed grating screen is made；
2) cut out to arrange uniformly and with semiconductor element section kissing merge on fixed grating screen and can accommodate semiconductor
The grate opening of element, cut out on upper modular lattice screen with the one-to-one through hole of stationary grizzly panel gate hole, wherein upper modular lattice
The two neighboring through hole of screen connects to form multiple cell bodies, and cell body can house water conservancy diversion powder and form flow deflector, in lower modular lattice grid
Cut out on plate with the one-to-one through hole of stationary grizzly panel gate hole, wherein the two neighboring through hole connection shape of lower modular lattice screen
Into multiple cell bodies, cell body can house metal dust and form lower flow deflector；
3) P-type semiconductor element and N-type semiconductor element are respectively embedded into the corresponding grate opening of fixed grating screen, and make half
The end face of conductor element is concordant；
4) upper modular lattice screen is tiled and is pasted onto the upper surface of fixed grating screen, and make the through hole correspondence of modular lattice screen solid
Fixed the grate opening of screen, and lower modular lattice screen is tiled and is pasted onto the lower surface of fixed grating screen, and makes the logical of lower modular lattice screen
The grate opening of hole correspondence fixed grating screen；
5) in upper modular lattice screen outer surface thermal spray metal powder, metal dust melted by heating landfill is made in upper modular lattice grid
Fix in the through hole of plate and with the semiconductor element upper surface welding in stationary grizzly panel gate hole, the metal dust of melting is upper
Modular lattice screen outer surface forms overall densified metal powder layer；
6) continue in the same metal dust of lower modular lattice screen outer surface thermal spraying, make metal dust melted by heating landfill
Fixed in the through hole of lower modular lattice screen and with the welding of semiconductor element lower surface, the water conservancy diversion powder of melting is outside lower modular lattice screen
Side surface forms overall densified metal powder layer；
7) semiconductor module of thermal spray metal powder is cooled down；
8) Milling Process is carried out to semiconductor module side surface, removes prominent upper modular lattice screen outer surface and be linked to be one
The metal powder layer of body, makes modular lattice screen outer surface smooth and exposes the metal dust in the through-hole structure in it, through hole
Layer forms multichip connection P-type semiconductor element and N-type semiconductor element and spaced upper flow deflector；
9) continue, Milling Process is carried out to semiconductor module opposite side surface, remove prominent lower modular lattice screen outer surface
The metal powder layer being connected, makes lower modular lattice screen outer surface smooth and exposes the gold in the through-hole structure in it, through hole
Belong to powder bed formation multichip connection P-type semiconductor element and N-type semiconductor element and spaced lower flow deflector, complete non-weldering
The making of binding structure semiconductor module.
A kind of non-solder structural semiconductor module, including upper modular lattice screen, fixed grating screen, the semiconductor element stacked successively
Part and lower modular lattice screen, the semiconductor element include P-type semiconductor element and N-type semiconductor element and are embedded at the fixation
In the grate opening of flase floor, the end face of semiconductor element is concordant, the lattice of the through hole correspondence fixed grating screen of the upper modular lattice screen
Filled with inside in gate hole, the grate opening of the through hole correspondence fixed grating screen of the lower modular lattice screen, the through hole of upper modular lattice screen
Extend into fixed grating screen upper surface and melt affixed metal powder layer, the metal powder layer with semiconductor element upper surface
Outer face it is concordant with upper modular lattice screen outer surface and form the spaced upper flow deflector of multi-disc, the through hole of lower modular lattice screen
Interior be filled with inwardly extends into fixed grating screen lower surface and melts affixed metal powder layer, institute with semiconductor element lower surface
The outer face for stating metal powder layer is concordant with lower modular lattice screen outer surface and form the spaced lower flow deflector of multi-disc, uses
Fixed grating screen fixes semiconductor element, and is provided with the upper modular lattice of through hole respectively in semiconductor element upper and lower surface
Screen and lower modular lattice screen, metal dust is sprayed into and melts the affixed water conservancy diversion for forming densification in through hole with semiconductor element end face
Layer, fundamentally eliminates conventional metals flow deflector and soldering tin material, so that under the premise of semiconductor module performance is ensured, it is effectively anti-
Stop welding region solder semiconductor module because of caused by high temperature ageing to fail, raising heat exchanging efficiency simplifies making work
Skill, reduces cost of manufacture, and non-solder mode also reduces the pollution level to environment, meanwhile, with leading that the external world is directly contacted
Flow structure reduces thermal resistance, improves the heat conduction efficiency of semiconductor module.
Preferably, the fixed grating screen includes the upper fixed grating screen and lower fixed grating screen of mirror symmetry, it is described
The upper end of semiconductor element is embedded in the grate opening of fixed flase floor, the lower end of semiconductor element be embedded at it is described under
In the grate opening of fixed grating screen, the end face of semiconductor element is concordant, the thicker fixed grating screen of original monoblock is divided into above and below
The relatively thin fixed grating screen of two pieces of mirror symmetries, it is easy to the processing of flase floor, reduces cost of manufacture, improves production efficiency.
Preferably, the metal dust is nickel powder, aluminium powder, silver powder or zinc powder can also be used.
Preferably, the material of the fixed grating screen, upper modular lattice screen and lower modular lattice screen is Teflon sheet material, Teflon
There is imperial sheet material excellent high temperature resistance super to seek peace insulating properties, and heatproof is up to 300 DEG C, but also with workability, and reliability is high, cost
It is cheap, resin plate or nylon plate can also be used.
Preferably, the upper modular lattice screen inner surface is corresponding with the fixed grating screen upper surface and is adhesively fixed,
The lower modular lattice screen inner surface is adhesively fixed with fixed grating screen lower surface, in thermal spraying ensure upper and lower mould flase floor with
The stable connection of fixed grating screen, ease of assembly.
Preferably, the through-hole wall of the upper modular lattice screen and lower modular lattice screen be in hair side shape, enhancing flow deflector with
The connection of upper and lower mould flase floor, effectively improves the steadiness and security of whole semiconductor module.
Preferably, the upper and lower end face of the semiconductor element is in hair side shape, metal powder layer can be strengthened with partly leading
Bonding strength between volume elements part, improves the contact of metal powder layer.
The beneficial effects of the invention are as follows：Semiconductor element is fixed using fixed grating screen, and in semiconductor element upper surface
It is provided with the upper modular lattice screen and lower modular lattice screen of through hole respectively with lower surface, metal dust is sprayed into through hole and semiconductor
Element melting is affixed to form fine and close guide layer, conventional metals flow deflector and soldering tin material is fundamentally eliminated, so as to ensure
Under the premise of semiconductor module performance, it effectively prevent welding region solder semiconductor module because of caused by high temperature ageing and fail,
Raising heat exchanging efficiency, simplifies manufacture craft, reduces cost of manufacture, and non-solder mode also reduces the pollution journey to environment
Degree, meanwhile, the flow deflector structure directly contacted with the external world reduces thermal resistance, improves the heat conduction efficiency of semiconductor module.
Brief description of the drawings
Fig. 1 is a kind of structural representation of non-solder structural semiconductor module of the present invention.
Fig. 2 is the explosive view of Fig. 1 structures.
Modular lattice screen on 1. in figure, 2. semiconductor elements, 3. times modular lattice screens, flow deflector on 4., 5. times flow deflectors, on 6.
Fixed grating screen, 7. times fixed grating screens, 8. grate openings, 9. through holes.
Embodiment
Below by embodiment, and with reference to accompanying drawing, technical scheme is described in further detail.
Embodiment：A kind of non-solder structural semiconductor module of the present embodiment, as depicted in figs. 1 and 2, including is stacked successively
Upper modular lattice screen 1, fixed grating screen, semiconductor element 2 and lower modular lattice screen 3, fixed grating screen, upper modular lattice screen and lower mould
The material of flase floor is Teflon sheet material, and semiconductor element is bismuth telluride material, including P-type semiconductor element and N-type semiconductor
Element, the upper and lower end face of semiconductor element is in hair side shape, and fixed grating screen includes the upper fixed grating screen 6 of mirror symmetry with
Fixed grating screen 7, the upper end of semiconductor element is embedded in the grate opening 8 of fixed grating screen, the upper surface of semiconductor element
Concordant with upper fixed grating screen outer surface, the lower end of semiconductor element is embedded in the grate opening of lower fixed grating screen, is partly led
The lower surface of volume elements part is concordant with lower fixed grating screen outer surface, and cope plate flase floor is smooth to be adhered to fixed grating screen
Outer surface, the grate opening of the upper fixed grating screen of the correspondence of through hole 9 of upper modular lattice screen, lower template flase floor is smooth be bonded in it is lower solid
Fix the outer surface of screen, the grate opening of the lower fixed grating screen of through hole correspondence of lower modular lattice screen；In the logical of upper modular lattice screen
There being thermal spraying in hole inwardly extends into fixed grating screen outer surface and melts affixed metal with semiconductor element upper surface
Powder bed, the outer face of metal powder layer is concordant with upper modular lattice screen outer surface and forms the spaced upper flow deflector of multi-disc
4, in the through hole of lower modular lattice screen thermal spraying have inwardly extend into lower fixed grating screen outer surface and with semiconductor element lower end
Face melts affixed metal powder layer, and the outer face of metal powder layer is concordant with lower modular lattice screen outer surface and forms multi-disc phase
The lower flow deflector 5 being mutually spaced, metal dust is nickel powder.
When non-solder structural semiconductor module is assembled, first Teflon sheet material is cut by technological requirement, modular lattice grid are made
Plate, lower modular lattice screen and upper fixed grating screen, lower fixed grating screen；Then, arrangement is cut out on fixed grating screen up and down equal
It is even and with semiconductor element section be interference fitted and the grate opening of semiconductor element can be accommodated, cut out on upper modular lattice screen and
The upper one-to-one through hole of stationary grizzly panel gate hole, wherein adjacent through-holes connect to form multiple cell bodies, and cell body can house metal
Powder forms flow deflector, cut out on lower modular lattice screen with the one-to-one through hole of lower stationary grizzly panel gate hole, wherein
Adjacent through-holes connect to form multiple cell bodies, and cell body can house metal dust and form lower flow deflector, now, fixed semiconductor element
The upper and lower modular lattice screen of upper and lower fixed grating screen and receiving metal dust completes.
Secondly, by the roughening process that sandblasts, the both ends of the surface formation roughened structure of semiconductor element is made, further according to technological requirement
In the corresponding grate opening that the upper end of P-type semiconductor element and N-type semiconductor element is respectively embedded into upper fixed grating screen, make partly to lead
The upper surface of volume elements part is concordant with the outer surface of upper fixed grating screen, by under P-type semiconductor element and N-type semiconductor element
End is respectively embedded into the corresponding grate opening of lower fixed grating screen, and makes the outer of the lower surface of semiconductor element and lower fixed grating screen
Side surface is concordant, and the arrangement for completing semiconductor element is fixed.
Again, upper modular lattice screen is tiled with AB glue and is pasted onto the outer surface of upper fixed grating screen, and make modular lattice grid
The grate opening of the upper fixed grating screen of through hole correspondence of plate, lower modular lattice screen is tiled with AB glue and is pasted onto the outer of lower fixed grating screen
Side surface, and make the grate opening of the lower fixed grating screen of through hole correspondence of lower modular lattice screen, in upper modular lattice screen outer surface thermal jet
Apply nickel powder, make nickel powder melted by heating landfill in the through hole of upper modular lattice screen and with the semiconductor in upper stationary grizzly panel gate hole
The welding of element upper surface is fixed, and the nickel powder of melting forms overall fine and close nickel dam in upper modular lattice screen outer surface；Continue under
The same nickel powder of modular lattice screen outer surface thermal spraying, makes nickel powder melted by heating landfill in the through hole of lower modular lattice screen and with half
The welding of conductor element lower surface is fixed, and the nickel powder of melting forms overall fine and close nickel dam in lower modular lattice screen outer surface.
Then, the semiconductor module of thermal spraying nickel powder is cooled down, the side surface progress milling to semiconductor module adds
Work, removing protrudes from modular lattice screen outer surface and the nickel dam being connected, and makes modular lattice screen outer surface smooth and reveals
The through-hole structure gone out in it, now, the nickel dam in through hole just form multi-disc and connect P-type semiconductor element and N-type semiconductor respectively
Element and spaced upper flow deflector, continue, and Milling Process is carried out to semiconductor module opposite side surface, remove prominent lower mould
The nickel dam that flase floor outer surface is connected, makes lower modular lattice screen outer surface smooth and exposes the through-hole structure in it, leads to
Nickel dam formation multi-disc in hole connects P-type semiconductor element and N-type semiconductor element and spaced lower flow deflector respectively, extremely
This, completes the making of non-solder structural semiconductor module.
In the description of the invention, technical term " on ", " under ", "front", "rear", " interior ", " outer " etc. represent direction or position
The relation of putting is to be based on direction shown in the drawings or position relationship, is for only for ease of description and understands technical scheme,
Described above that not the present invention is limited, the present invention is also not limited to the citing of described above, the art it is common
Technical staff the present invention essential scope in made change, retrofit, increase or replace, be regarded as the present invention protection
Scope.
Claims (8)
1. a kind of preparation method of non-solder structural semiconductor module, its step is as follows：
1) first sheet material is cut by technological requirement, modular lattice screen, lower modular lattice screen and fixed grating screen is made；
2) cut out to arrange uniformly and with semiconductor element section kissing merge on fixed grating screen and can accommodate semiconductor element
Grate opening, cut out on upper modular lattice screen with the one-to-one through hole of stationary grizzly panel gate hole, wherein upper modular lattice screen
Two neighboring through hole connect to form multiple cell bodies, cell body can house water conservancy diversion powder and form flow deflector, on lower modular lattice screen
Cut out with the one-to-one through hole of stationary grizzly panel gate hole, wherein the two neighboring through hole of lower modular lattice screen connects to form many
Individual cell body, cell body can house metal dust and form lower flow deflector；
3) P-type semiconductor element and N-type semiconductor element are respectively embedded into the corresponding grate opening of fixed grating screen, and make semiconductor
The end face of element is concordant；
4) upper modular lattice screen is tiled and is pasted onto the upper surface of fixed grating screen, and make the through hole correspondence fixed grating of modular lattice screen
The grate opening of screen, lower modular lattice screen is tiled and is pasted onto the lower surface of fixed grating screen, and makes the through hole pair of lower modular lattice screen
Answer the grate opening of fixed grating screen；
5) in upper modular lattice screen outer surface thermal spray metal powder, metal dust melted by heating landfill is made in upper modular lattice screen
Fix in through hole and with the semiconductor element upper surface welding in stationary grizzly panel gate hole, the metal dust of melting is in upper modular lattice
Screen outer surface forms overall densified metal powder layer；
6) continue in the same metal dust of lower modular lattice screen outer surface thermal spraying, make metal dust melted by heating landfill under
Fix in the through hole of modular lattice screen and with the welding of semiconductor element lower surface, the water conservancy diversion powder of the melting table on the outside of lower modular lattice screen
Face forms overall densified metal powder layer；
7) semiconductor module of thermal spray metal powder is cooled down；
8) Milling Process is carried out to semiconductor module side surface, removes prominent upper modular lattice screen outer surface and be connected
Metal powder layer, makes modular lattice screen outer surface smooth and exposes the metal powder layer shape in the through-hole structure in it, through hole
Into multichip connection P-type semiconductor element and N-type semiconductor element and spaced upper flow deflector；
9) continue, Milling Process is carried out to semiconductor module opposite side surface, remove prominent lower modular lattice screen outer surface and be linked to be
The metal powder layer of one, makes lower modular lattice screen outer surface smooth and exposes the metal powder in the through-hole structure in it, through hole
Last layer formation multichip connection P-type semiconductor element and N-type semiconductor element and spaced lower flow deflector, complete non-solder knot
The making of structure semiconductor module.
2. a kind of non-solder structural semiconductor module, it is characterised in that：Including stack successively upper modular lattice screen (1), fixed grating
Screen, semiconductor element (2) and lower modular lattice screen (3), the semiconductor element include P-type semiconductor element and N-type semiconductor
Element and it is embedded in the grate opening (8) of the fixed grating screen, the end face of semiconductor element is concordant, the upper modular lattice screen
The grate opening of through hole (9) correspondence fixed grating screen, the grate opening of the through hole correspondence fixed grating screen of the lower modular lattice screen, upper mould
It is filled with the through hole of flase floor and inwardly extends into fixed grating screen upper surface and melted with semiconductor element upper surface affixed
Metal powder layer, the outer face of the metal powder layer is concordant with upper modular lattice screen outer surface and to form multi-disc spaced
It is filled with upper flow deflector (4), the through hole of lower modular lattice screen and inwardly extends into fixed grating screen lower surface and and semiconductor element
Lower surface melts affixed metal powder layer, the outer face of the metal powder layer simultaneously shape concordant with lower modular lattice screen outer surface
Into the spaced lower flow deflector (5) of multi-disc.
3. non-solder structural semiconductor module according to claim 2, it is characterised in that：The fixed grating screen includes mirror
To symmetrical upper fixed grating screen (6) and lower fixed grating screen (7), the upper end of the semiconductor element (2) is embedded on described
In the grate opening (8) of fixed grating screen, the lower end of semiconductor element is embedded in the grate opening of the lower fixed grating screen, is partly led
The end face of volume elements part is concordant.
4. non-solder structural semiconductor module according to claim 2, it is characterised in that：The metal dust be nickel powder or
Aluminium powder or silver powder or zinc powder.
5. non-solder structural semiconductor module according to claim 2, it is characterised in that：The fixed grating screen, upper mould
Flase floor (1) and the material of lower modular lattice screen (3) are Teflon sheet material or resin plate or nylon plate.
6. non-solder structural semiconductor module according to claim 2, it is characterised in that：In the upper modular lattice screen (1)
Side surface is corresponding with the fixed grating screen upper surface and is adhesively fixed, lower modular lattice screen (3) inner surface and fixed grating
Screen lower surface is adhesively fixed.
7. non-solder structural semiconductor module according to claim 2, it is characterised in that：The upper modular lattice screen (1) and
Through hole (9) inwall of lower modular lattice screen (3) is in hair side shape.
8. the non-solder structural semiconductor module according to one of claim 2 to 7, it is characterised in that：The semiconductor element
The upper and lower end face of part (2) is in hair side shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510674136.5A CN105336714B (en) | 2015-10-16 | 2015-10-16 | Non-solder structural semiconductor module and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510674136.5A CN105336714B (en) | 2015-10-16 | 2015-10-16 | Non-solder structural semiconductor module and preparation method |
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| Publication Number | Publication Date |
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| CN105336714A CN105336714A (en) | 2016-02-17 |
| CN105336714B true CN105336714B (en) | 2017-10-24 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102308400A (en) * | 2008-12-19 | 2012-01-04 | Hi-Z技术股份有限公司 | High temperature, high efficiency thermoelectric module |
| CN103390722A (en) * | 2012-05-10 | 2013-11-13 | 财团法人工业技术研究院 | Self-assembly apparatus, method of self-assembling element, and method of assembling thermoelectric element |
| CN205069620U (en) * | 2015-10-16 | 2016-03-02 | 杭州大和热磁电子有限公司 | Non - welded structure semiconductor module |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11135843A (en) * | 1997-10-31 | 1999-05-21 | Kubota Corp | Al-si electrode |
| JP2003229607A (en) * | 2002-02-01 | 2003-08-15 | Hiroshima Pref Gov | Thermomodule and method for manufacturing the same |
-
2015
- 2015-10-16 CN CN201510674136.5A patent/CN105336714B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102308400A (en) * | 2008-12-19 | 2012-01-04 | Hi-Z技术股份有限公司 | High temperature, high efficiency thermoelectric module |
| CN103390722A (en) * | 2012-05-10 | 2013-11-13 | 财团法人工业技术研究院 | Self-assembly apparatus, method of self-assembling element, and method of assembling thermoelectric element |
| CN205069620U (en) * | 2015-10-16 | 2016-03-02 | 杭州大和热磁电子有限公司 | Non - welded structure semiconductor module |
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| CN105336714A (en) | 2016-02-17 |
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