CN113161439A - Battery interconnection structure, battery interconnection assembly and preparation method - Google Patents
Battery interconnection structure, battery interconnection assembly and preparation method Download PDFInfo
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- CN113161439A CN113161439A CN202110131145.5A CN202110131145A CN113161439A CN 113161439 A CN113161439 A CN 113161439A CN 202110131145 A CN202110131145 A CN 202110131145A CN 113161439 A CN113161439 A CN 113161439A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000003466 welding Methods 0.000 claims abstract description 47
- 229910052709 silver Inorganic materials 0.000 claims abstract description 11
- 239000004332 silver Substances 0.000 claims abstract description 11
- 229910000679 solder Inorganic materials 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 30
- 239000002313 adhesive film Substances 0.000 claims description 18
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical group O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 18
- 239000012790 adhesive layer Substances 0.000 claims description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
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- 239000002184 metal Substances 0.000 claims description 6
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- 239000000463 material Substances 0.000 claims description 4
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- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
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- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
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- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000004020 conductor Substances 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- 238000005476 soldering Methods 0.000 description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Connection Of Batteries Or Terminals (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
The invention discloses a battery interconnection structure, a battery assembly and a preparation method, wherein the battery interconnection structure comprises a battery, a main grid, a transparent conductive bonding layer and a welding strip, wherein the transparent conductive bonding layer covers the main grid, and the width of the transparent conductive bonding layer is greater than that of the main grid; the welding strip is pressed on the main grid, and the height of the transparent conductive bonding layer is larger than that of the main grid and the welding strip. In the invention, the transparent conductive bonding layer is adopted to bond and fix the welding strip and the main grid, so that the overall process reliability of the assembly is greatly improved. Due to the presence of the double layer parallel conductor, even with a solder ribbon of a lower diameter, the total resistance will be greatly reduced according to 1/R1+ 1/R2. Due to the transparent conductive bonding layer, the design of the battery screen plate can eliminate a bonding pad and an anti-breaking grid structure, so that the consumption of positive silver is saved; the structure of eliminating the welding pad and reducing the diameter of the welding strip can increase the light receiving surface of the battery and improve the power output generated in unit area.
Description
Technical Field
The invention relates to the technical field of photovoltaic cells, in particular to a cell interconnection structure, a cell interconnection assembly and a preparation method.
Background
In the past, the large-scale use of traditional petrochemicals promotes the continuous progress of the industrial level and the continuous improvement of the living level of people, but improper use and management lack cause the environmental pollution to be more serious, and seriously threaten the home where people rely on to live, and various government agencies also continuously take powerful measures to suppress the pollution, wherein one of the measures is to vigorously develop green energy, and the photovoltaic module can directly convert sunlight into electric energy, is pollution-free, sustainable, high in efficiency and easy to realize, so that the photovoltaic module can be rapidly developed in recent years, and the accumulated packaging capacity of China at present breaks through 130.25 GW.
In recent years, investors of photovoltaic power station projects are more and more concerned about the electricity consumption cost, the application of high-power components can further reduce the electricity consumption cost, and photovoltaic component manufacturers continuously upgrade and improve the output power of the components through technologies. The improvement of the output power of the component can be realized by improving the battery efficiency, optimizing material collocation, innovating circuit design and other modes, such as half-chip, laminated tile, double-sided and multi-main-grid technologies and the like. The multi-main-grid component can reduce the consumption of positive silver, the power of the component is increased, the component is popular, the market share is increased rapidly, and the market share reaches more than 40% in 2020.
At present, the multi-main grid module is realized by soldering a circular solder strip plated with tin-lead alloy on the surface with a battery by hot infrared, and a battery screen is provided with a plurality of pads, but the following problems still exist (for example, a multi-main grid solar photovoltaic module disclosed in patent document CN 208767313U):
firstly, the circular welding strip is only welded with the battery through a plurality of welding pads, the circular welding strip can only be welded with the battery at the bottom, the contact area is small, the problem of insufficient soldering is easy to occur, in order to reduce the influence of insufficient soldering, a single main grid needs to be provided with a plurality of welding pads and prevent the gradual change of a broken grid, the consumption of silver paste is greatly improved, and the cost is also greatly increased; secondly, the welding is carried out by reacting the tin-lead alloy on the surface of the circular welding strip with silver in the welding pad under the heat heating condition to form an alloy, the tin-lead protective layer on the surface of the circular welding strip is adsorbed on the battery welding pad under the action of surface tension and the like in the molten state, a copper body on the upper part of the welding strip is exposed in the air, is rapidly oxidized at high temperature, the conductivity is deteriorated, even acetic acid, water oxygen and the like in EVA after packaging further corrode the copper body, the conductivity of the welding strip is reduced, and the long-term reliability is influenced; thirdly, the resistance of the circular welding strip is inversely proportional to the sectional area under the condition of the same length, the larger the area is, the lower the resistance is, so that the diameter of the circular welding strip is generally 0.35-0.4mm based on the consideration of circuit loss, the shading area of the welding strip reaches 2% based on a nine-main-grid 158.75 battery, and the power of the assembly is difficult to further improve; fourthly, the diameter of the traditional welding strip is 0.35-0.4mm, the distance between the assembly pieces needs to be set to be 2mm or more, series welding and laminated fracturing pieces can be reduced, and therefore the assembly efficiency is low and the BOM cost is increased.
Disclosure of Invention
The invention aims to solve the defects of the prior art, and provides a battery interconnection structure which comprises a battery, a main grid, a transparent conductive bonding layer and a welding strip, wherein the transparent conductive bonding layer covers the main grid, and the width of the transparent conductive bonding layer is greater than that of the main grid; the welding strip is pressed on the main grid, and the height of the transparent conductive bonding layer is larger than that of the main grid and the welding strip.
Further, the transparent conductive bonding layer is one of an organic silicon system, an acrylic acid system, an epoxy resin system and a hybrid system thereof.
Furthermore, the conductive medium in the transparent conductive bonding layer is one or more of a conductive oxide and hybrid system, a carbon nanotube, graphene, a conductive polymer, a metal nanowire and a metal nanodot.
Furthermore, the conductive medium in the transparent conductive bonding layer is specifically SnO2、In2O3、 Cd2In4、SnO2:Sb、SnO2:F、In2O3:Sn、ZnO:Al、TiO2: nb, polyimide, (3, 4-ethylenedioxythiophene): one or more of polystyrene sulfonate, silver and silver-coated copper.
Furthermore, the cross section of the welding strip is circular, the diameter of the welding strip is 0.05-0.3 mm, and the thickness of the tin-lead layer on the surface of the welding strip is 3-10 mu m.
Compared with a traditional welding strip with the diameter of 0.3-0.5 mm, the welding strip with the diameter of 0.05-0.3 mm can increase the light receiving surface of the battery, so that the battery component in unit area can generate more power output.
Further, the left and right sides of the transparent conductive adhesive layer extend onto the surface of the battery, respectively.
The utility model provides a battery interconnection subassembly, the subassembly include frame and battery interconnection structure, the frame in set gradually apron, lower floor's glued membrane, battery interconnection structure, upper rubber membrane and glass from inside to outside.
Preferably, the upper adhesive film is a transparent adhesive film, and the lower adhesive film is a transparent or ceramic white adhesive film.
Preferably, the cover plate is a back plate or inorganic glass
A preparation method of a battery interconnection structure comprises the following steps:
the method comprises the following steps: coating a transparent conductive adhesive layer on the main grid side of the cell;
step two: placing the welding strip on the transparent conductive bonding layer at the position of the main grid through a positioning device, and connecting the welding strip with the main grid in a compression joint mode;
step three: preheating for 10-30 s at 80-110 ℃ by thermal infrared to realize primary curing of the bonding layer;
step four: after lamination, the materials are put into a laminating machine to be laminated along with the glue film so as to realize complete curing.
Has the advantages that: (1) according to the invention, the transparent conductive bonding layer is adopted to bond and fix the welding strip and the main grid, so that the problems of insufficient soldering, tin beads and exposed copper on the inner layer of the welding strip which are easily caused during high-temperature heating can be effectively avoided, the defective rate of series welding, repair and lamination caused by insufficient soldering and tin beads is further avoided, the influence of reduced long-term reliability of the assembly caused by exposed copper is avoided, and the overall process reliability of the assembly is greatly improved.
(2) Due to the presence of the double layer parallel conductor, even with a solder ribbon of a lower diameter, the total resistance will be greatly reduced according to 1/R1+ 1/R2.
(3) In the invention, by virtue of the transparent conductive bonding layer, the design of the battery mesh plate can eliminate the bonding pad and the anti-breaking grid structure, thereby saving the consumption of positive silver.
(4) In the invention, the light receiving surface of the battery can be increased by eliminating the welding disc and reducing the diameter of the welding strip, and the power output generated in unit area is improved.
Drawings
Fig. 1 is a schematic diagram of a conventional battery front screen in the background art;
FIG. 2 is a schematic view of a front screen of a battery of the present invention;
FIG. 3 is a schematic diagram of a cell interconnect structure in the present invention;
fig. 4 is a partially enlarged view of a cell interconnect structure in the present invention;
FIG. 5 is a schematic cross-sectional view of a cell interconnect structure in accordance with the present invention;
fig. 6 is a partially enlarged schematic view of a cross section of a cell interconnect structure in accordance with the present invention;
FIG. 7 is a schematic cross-sectional view of a battery interconnect assembly of the present invention;
in the figure: 1. glass, 2, an upper adhesive film layer, 3, a battery interconnection structure, 4, a lower adhesive film layer, 5, a cover plate, 6, a bonding pad, 7, a gradual change design, 8, a main grid, 9, a transparent conductive bonding layer, 10, a welding strip, 11, a battery, 12 and a frame.
Detailed Description
For the purpose of enhancing the understanding of the present invention, the present invention will be further described in detail with reference to the following examples and the accompanying drawings, which are only for the purpose of illustrating the present invention and are not to be construed as limiting the scope of the present invention.
As shown in fig. 2 to 6, a battery interconnection structure includes a battery 11, a main grid 8, a transparent conductive adhesive layer 9 and a solder strip 10, wherein the transparent conductive adhesive layer 9 covers the main grid 8, and the width of the transparent conductive adhesive layer 9 is greater than that of the main grid 8; the welding strip 10 is pressed on the main grid 8, and the height of the transparent conductive bonding layer 9 is larger than that of the main grid 8 and the welding strip 10.
In this embodiment, the transparent conductive adhesive layer is one of a silicone system, an acrylic system, an epoxy system and a hybrid system thereof.
In this embodiment, the conductive medium in the transparent conductive adhesive layer is one or more of a conductive oxide, a hybrid system, a carbon nanotube, graphene, a conductive polymer, a metal nanowire, and a metal nanodot.
In this embodiment, the conductive medium in the transparent conductive adhesive layer is SnO2、In2O3、Cd2In4、SnO2:Sb、SnO2:F、In2O3:Sn、ZnO:Al、TiO2: nb, polyimide, (3, 4-ethylenedioxythiophene): one or more of polystyrene sulfonate, silver and silver-coated copper.
In this embodiment, the cross-section of the solder strip is circular, the diameter of the solder strip is 0.05-0.3 mm, and the thickness of the tin-lead layer on the surface of the solder strip is 3-10 μm.
In this embodiment, the left and right sides of the transparent conductive adhesive layer extend to the surface of the battery.
As shown in fig. 7, the battery interconnection assembly comprises a frame and a battery interconnection structure, wherein a cover plate, a lower adhesive film, the battery interconnection structure, an upper adhesive film and glass are sequentially arranged in the frame from inside to outside.
In this embodiment, the upper adhesive film is a transparent adhesive film, and the lower adhesive film is a transparent or ceramic white adhesive film; the cover plate is a back plate or inorganic glass
A preparation method of a battery interconnection structure comprises the following steps:
the method comprises the following steps: coating a transparent conductive adhesive layer on the main grid side of the cell;
step two: placing the welding strip on the transparent conductive bonding layer at the position of the main grid through a positioning device, and connecting the welding strip with the main grid in a compression joint mode;
step three: preheating for 10-30 s at 80-110 ℃ by thermal infrared to realize primary curing of the bonding layer;
step four: after lamination, the materials are put into a laminating machine to be laminated along with the glue film so as to realize complete curing.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. A battery interconnection structure is characterized by comprising a battery, a main grid, a transparent conductive bonding layer and a welding strip, wherein the transparent conductive bonding layer covers the main grid, and the width of the transparent conductive bonding layer is larger than that of the main grid; the welding strip is pressed on the main grid, and the height of the transparent conductive bonding layer is larger than that of the main grid and the welding strip.
2. The battery interconnection structure, the battery assembly and the manufacturing method of the battery assembly as claimed in claim 1, wherein the transparent conductive adhesive layer is one of an organic silicon system, an acrylic acid system, an epoxy resin system and a hybrid system thereof.
3. The battery interconnection structure, the battery assembly and the preparation method of claim 1, wherein the conductive medium in the transparent conductive adhesive layer is one or more of a conductive oxide and hybrid system, a carbon nanotube, graphene, a conductive polymer, a metal nanowire and a metal nanodot.
4. The battery interconnection structure, the battery assembly and the preparation method of claim 1, wherein the conductive medium in the transparent conductive adhesive layer is SnO2、In2O3、Cd2In4、SnO2:Sb、SnO2:F、In2O3:Sn、ZnO:Al、TiO2: nb, polyimide, (3, 4-ethylenedioxythiophene): one or more of polystyrene sulfonate, silver and silver-coated copper.
5. The battery interconnection structure, the battery assembly and the preparation method of the battery assembly as claimed in claim 1, wherein the cross section of the solder strip is circular, the diameter of the solder strip is 0.05-0.3 mm, and the thickness of a tin-lead layer on the surface of the solder strip is 3-10 μm; .
6. The battery interconnect structure, assembly and method of claim 1 wherein the transparent conductive adhesive layer extends from the left and right sides of the transparent conductive adhesive layer to the surface of the battery.
7. The battery interconnection assembly is characterized by comprising a frame and a battery interconnection structure, wherein a cover plate, a lower-layer adhesive film, the battery interconnection structure, an upper-layer adhesive film and glass are sequentially arranged in the frame from inside to outside.
8. The battery interconnection structure, the battery assembly and the manufacturing method of claim 7, wherein the upper adhesive film is a transparent adhesive film, and the lower adhesive film is a transparent or ceramic white adhesive film.
9. The battery interconnect structure, assembly and method of making according to claim 7, wherein said cover plate is a back plate or an inorganic glass.
10. The method for preparing a battery interconnection structure according to any one of claims 7 to 9, wherein the method comprises the following steps:
the method comprises the following steps: coating a transparent conductive adhesive layer on the main grid side of the cell;
step two: placing the welding strip on the transparent conductive bonding layer at the position of the main grid through a positioning device, and connecting the welding strip with the main grid in a compression joint mode;
step three: preheating for 10-30 s at 80-110 ℃ by thermal infrared to realize primary curing of the bonding layer;
step four: after lamination, the materials are put into a laminating machine to be laminated along with the glue film so as to realize complete curing.
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CN202110131145.5A CN113161439B (en) | 2021-01-30 | 2021-01-30 | Battery interconnection structure, assembly and preparation method |
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CN113161439A true CN113161439A (en) | 2021-07-23 |
CN113161439B CN113161439B (en) | 2023-12-19 |
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