CN105328193A - Powder metallurgy target material and manufacturing method thereof - Google Patents
Powder metallurgy target material and manufacturing method thereof Download PDFInfo
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- CN105328193A CN105328193A CN201410404994.3A CN201410404994A CN105328193A CN 105328193 A CN105328193 A CN 105328193A CN 201410404994 A CN201410404994 A CN 201410404994A CN 105328193 A CN105328193 A CN 105328193A
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Abstract
The invention discloses a powder metallurgy target material and a manufacturing method thereof. The powder metallurgy target material is prepared from, by mass, 0.1-10% of Cu and the balance Cr. The manufacturing method of the powder metallurgy target material includes the following steps that firstly, materials are prepared, wherein Cr powder and Cu powder are prepared according to the component ratio of the powder metallurgy target material; secondly, powder is mixed, wherein the raw materials are placed in a material mixing machine to be evenly mixed, and in order to prevent powder oxidation, the powder mixing process is conducted in the vacuum state or under protection of inert gas (such as argon); thirdly, pressure sintering is conducted, wherein the mixed powder obtained in the second step is sintered under pressure to form a target blank; and fourthly, the target blank obtained in the third step is machined to prepare the Cr-Cu alloy monomer finished product target material, or the machined monomer target material and a back plate are welded into a composite finished product target material. The relative density of the powder metallurgy target material is 95% or above, and the powder metallurgy target material is used for the field of discrete devices and Schottky diode barriers and has the beneficial effects that the target density is high and target material components are uniform.
Description
Technical field
The present invention relates to a kind of powder metallurgy target and manufacture method thereof, particularly a kind of discrete device field Schottky barrier diode Cr-Cu alloy target material and manufacture method thereof.
Background technology
Schottky diode is metal is positive pole, take N-type semiconductor as negative pole, the metal-semiconductor device that the potential barrier that both utilizations contact surface is formed has rectification characteristic and makes.Metal material can aluminium, gold, molybdenum, nickel and titanium etc., and semiconductor is generally silicon (Si) or GaAs (GaAs).The reverse recovery time of Schottky diode is extremely short (may diminish to a few nanosecond), and forward conduction voltage drop is about 0.4V only, and rectified current can reach several thousand milliamperes, belongs to a kind of low-power consumption, ultra-speed semiconductor device.These good characteristics be other fast recovery diode incomparable.Thus be widely used as high frequency, low pressure, big current commutation diode, fly-wheel diode, protection diode, in the circuit such as microwave communication, make commutation diode, small-signal detector diode etc.
The metal material forming Schottky barrier with silicon generally adopts metal or alloy film, and prepare metal or alloy film and usually adopt magnetron sputtering technique to prepare, and the target used in magnetron sputtering process is the key factor affecting metal or alloy film performance.Therefore, the powder metallurgy target that processability is excellent becomes the key technology realizing excellent plated film.
Summary of the invention
An object of the present invention is the powder metallurgy target providing a kind of high density, uniform composition, adopts this powder metallurgy target can prepare the alloy coating of function admirable, for discrete device field Schottky barrier diode.
Another object of the present invention is to the manufacture method that a kind of described powder metallurgy target is provided.
For achieving the above object, the present invention takes following technical scheme:
A kind of powder metallurgy target, alloying component comprised by mass percentage is: Cu0.1 ~ 10%, and surplus is Cr.
Preferably, the relative density of described powder metallurgy target is higher than 95%.
A manufacture method for described powder metallurgy target, comprises the following steps:
(1) prepare burden: by alloying component proportioning Cr powder, the Cu powder raw material of powder metallurgy target;
(2) mixed powder: raw material is put into batch mixer and mixes; In order to prevent Powder Oxidation, this mixed powder process is carried out under vacuum state or inert gas (as argon gas) protection;
(3) pressure sintering: the mixed-powder pressure sintering of gained in step (2) is become target base;
(4) gained target base in step (3) is carried out machined and prepare Cr-Cu alloy monomer finished product target, or the monomer target after machined and backboard are welded as composite finished product target.
Wherein, the mean particle size D of Cr powder
50be 10 ~ 200 μm, the mean particle size D of Cu powder
50it is 10 ~ 200 μm.
Preferably, the pressure sintering in described step (3) is hot pressed sintering, and technique is: sintering temperature is 1000 ~ 1500 DEG C, and hot pressing pressure is 10 ~ 40MPa, and temperature retention time is 0.5 ~ 6h, at inert gas as carried out under argon shield.
Preferably, to be HIP sintering technique be the pressure sintering in described step (3): sintering temperature is 800 ~ 1300 DEG C, and pressure is 80 ~ 150MPa, and temperature retention time is 0.5 ~ 4h.
Tool of the present invention has the following advantages:
(1) target high density: pressure sintering pressurizes due to heating and carries out simultaneously, and powder is in hot plastic state, contribute to the carrying out of the contact diffusion of particle, flowing mass transport process, thus briquetting pressure is only cold pressing 1/10; Can sintering temperature be reduced, shorten sintering time, obtain the powder metallurgy product that density is high.The present invention adopts pressure sintering to prepare Cr-Cu alloys target base, and relative density can reach more than 95%.
(2) target material composition is even: powder metallurgy target involved in the present invention first adopts Cr, Cu homogenising to mix powder; obtain the mixed-powder of uniform composition; carry out the hot pressed sintering under Ar atmosphere protection or the HIP sintering in airtight jacket again; effectively can suppress the volatilization loss of Cu content, thus guarantee that the Cu content in the powder metallurgy target prepared fluctuates within 10%.
(3) adopt alloy target material of the present invention to prepare Cr-Cu alloy firm, regulated the work function height of alloy by Cu content, and then regulate the forward voltage drop (Vf) of Schottky diode, the demand of different components can be met.
Accompanying drawing explanation
Fig. 1 is preparation technology's flow chart of powder metallurgy target of the present invention.
Detailed description of the invention
Below by the drawings and specific embodiments, the present invention will be further described, but and do not mean that limiting the scope of the invention.
Be illustrated in figure 1 preparation technology's flow chart of powder metallurgy target of the present invention, mainly comprise the step such as batching, mixed powder, pressure sintering, machined.
Embodiment 1 ~ 8
1, prepare burden
Carry out raw material batching by the alloying component of the powder metallurgy target shown in table 1, the mass content of Cu is 0.1 ~ 10%, and surplus is the particle mean size of Cr, Cr powder is 10 ~ 200 μm, and the particle mean size of Cu powder is 10 ~ 200 μm.
2, mixed powder
Two of proportioning kinds of raw materials are put into batch mixer mix.In mixed process, in order to prevent Powder Oxidation, batch mixer is in vacuum state, or inert gas shielding, as Ar gas.
3, pressure sintering becomes target base
Hot pressed sintering: loaded in graphite jig by mixed powder, carry out hot pressed sintering, sintering temperature is 1000 ~ 1500 DEG C, and hot pressing pressure is 10 ~ 40MPa, and temperature retention time is 0.5 ~ 6h.Hot pressing, inert gas shielding in stove, as Ar gas.
HIP sintering: loaded in steel capsule by mixed powder, carry out HIP sintering after exhaust, sintering temperature is 800 ~ 1300 DEG C, and pressure is 80 ~ 150MPa, and temperature retention time is 0.5 ~ 4h.
4, machined/welding
Carry out machined to the target base of pressure sintering, produce monomer finished product target, or the monomer target after machined and backboard are welded as composite finished product target, the performance parameter of gained target is as shown in table 1.
Process conditions and the results of property of Cr-Cu alloy target material is prepared in table 1 embodiment 1 ~ 8
Claims (10)
1. a powder metallurgy target, is characterized in that, alloying component comprised by mass percentage is: Cu0.1 ~ 10%, and surplus is Cr.
2. powder metallurgy target according to claim 1, is characterized in that, the relative density of described powder metallurgy target is higher than 95%.
3. the manufacture method of powder metallurgy target according to claim 1, is characterized in that, comprise the following steps:
(1) prepare burden: by alloying component proportioning Cr powder, the Cu powder raw material of powder metallurgy target;
(2) mixed powder: two kinds of raw materials of institute's proportioning in step (1) are put into batch mixer and mixes;
(3) pressure sintering: the mixed-powder pressure sintering of gained in step (2) is become target base;
(4) gained target base in step (3) is carried out machined and prepare Cr-Cu alloy monomer finished product target, or the monomer target after machined and backboard are welded as composite finished product target.
4. the manufacture method of powder metallurgy target according to claim 3, is characterized in that, the mean particle size D of Cr powder
50be 10 ~ 200 μm, the mean particle size D of Cu powder
50it is 10 ~ 200 μm.
5. the manufacture method of powder metallurgy target according to claim 3, is characterized in that, the mixed powder process of described step (2) is carried out under vacuum state or inert gas shielding.
6. the manufacture method of powder metallurgy target according to claim 3, is characterized in that, described pressure sintering is hot pressed sintering or HIP sintering.
7. the manufacture method of powder metallurgy target according to claim 6, is characterized in that, described hot-pressing sintering technique is: sintering temperature is 1000 ~ 1500 DEG C, and hot pressing pressure is 10 ~ 40MPa, and temperature retention time is 0.5 ~ 6h.
8. the manufacture method of the powder metallurgy target according to claim 6 or 7, is characterized in that, described hot pressed sintering carries out under inert gas shielding.
9. the manufacture method of powder metallurgy target according to claim 6, is characterized in that, described HIP sintering technique is: sintering temperature is 800 ~ 1300 DEG C, and pressure is 80 ~ 150MPa, and temperature retention time is 0.5 ~ 4h.
10. the manufacture method of powder metallurgy target according to claim 3, is characterized in that, the Cu content fluctuation in the Cu content relative raw material in finished product target is within 10%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410404994.3A CN105328193A (en) | 2014-08-12 | 2014-08-12 | Powder metallurgy target material and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410404994.3A CN105328193A (en) | 2014-08-12 | 2014-08-12 | Powder metallurgy target material and manufacturing method thereof |
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| CN105328193A true CN105328193A (en) | 2016-02-17 |
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| CN201410404994.3A Pending CN105328193A (en) | 2014-08-12 | 2014-08-12 | Powder metallurgy target material and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108468027A (en) * | 2018-03-28 | 2018-08-31 | 清华大学 | A kind of Sb doped copper zinc tin sulfur selenium target and its preparation method and application |
| CN111438356A (en) * | 2020-04-13 | 2020-07-24 | 河北晟华新材料科技有限公司 | Titanium-aluminum target material for physical vapor deposition and preparation method thereof |
| CN113073299A (en) * | 2021-03-24 | 2021-07-06 | 宁波江丰电子材料股份有限公司 | Preparation method of chromium-silicon alloy sputtering target material |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000144396A (en) * | 1998-11-19 | 2000-05-26 | Hitachi Metals Ltd | Manufacture of target material |
| CN102756126A (en) * | 2011-04-28 | 2012-10-31 | 日立金属株式会社 | A manufacture method of MoCr target and the MoCr target |
| CN103182507A (en) * | 2013-03-19 | 2013-07-03 | 昆山海普电子材料有限公司 | Production method of chromium-aluminium alloy target material |
| CN103695852A (en) * | 2012-09-27 | 2014-04-02 | 宁波江丰电子材料有限公司 | Manufacturing method of tungsten silicon target material |
| CN103943687A (en) * | 2014-03-24 | 2014-07-23 | 吉林麦吉柯半导体有限公司 | Schottky barrier diode with CrCu alloy barrier |
-
2014
- 2014-08-12 CN CN201410404994.3A patent/CN105328193A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000144396A (en) * | 1998-11-19 | 2000-05-26 | Hitachi Metals Ltd | Manufacture of target material |
| CN102756126A (en) * | 2011-04-28 | 2012-10-31 | 日立金属株式会社 | A manufacture method of MoCr target and the MoCr target |
| CN103695852A (en) * | 2012-09-27 | 2014-04-02 | 宁波江丰电子材料有限公司 | Manufacturing method of tungsten silicon target material |
| CN103182507A (en) * | 2013-03-19 | 2013-07-03 | 昆山海普电子材料有限公司 | Production method of chromium-aluminium alloy target material |
| CN103943687A (en) * | 2014-03-24 | 2014-07-23 | 吉林麦吉柯半导体有限公司 | Schottky barrier diode with CrCu alloy barrier |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108468027A (en) * | 2018-03-28 | 2018-08-31 | 清华大学 | A kind of Sb doped copper zinc tin sulfur selenium target and its preparation method and application |
| CN111438356A (en) * | 2020-04-13 | 2020-07-24 | 河北晟华新材料科技有限公司 | Titanium-aluminum target material for physical vapor deposition and preparation method thereof |
| CN111438356B (en) * | 2020-04-13 | 2022-02-22 | 河北晟华新材料科技有限公司 | Titanium-aluminum target material for physical vapor deposition and preparation method thereof |
| CN113073299A (en) * | 2021-03-24 | 2021-07-06 | 宁波江丰电子材料股份有限公司 | Preparation method of chromium-silicon alloy sputtering target material |
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