CN105320207B - Band-gap reference source circuit - Google Patents

Band-gap reference source circuit Download PDF

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Publication number
CN105320207B
CN105320207B CN201410632659.9A CN201410632659A CN105320207B CN 105320207 B CN105320207 B CN 105320207B CN 201410632659 A CN201410632659 A CN 201410632659A CN 105320207 B CN105320207 B CN 105320207B
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current branch
image current
transistor
branch road
pmos
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CN105320207A (en
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邵博闻
唐成伟
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Abstract

The invention discloses a kind of band-gap reference source circuit, including：Three image current branch roads, three resistance, two PNP transistors and an operational amplifier；The emitter area of second PNP transistor is N times of the emitter area of the first PNP transistor；First PNP transistor discord resistor coupled in parallel.This bit transistor is all in series between three image current branch roads and supply voltage.Transistor threshold electricity in one's own department or unit can enable three image current branch roads all to turn on after electricity on the supply voltage close to zero volt, so the degeneracy point of integrated circuit zero current can be eliminated；The present invention uses unilateral bypass resistance, the first PNP transistor discord resistor coupled in parallel so that the first PNP transistor directly turns on after the conducting of corresponding image current branch road, so the degeneracy point for the triode zero current that can disappear；Circuit of the present invention only has a stable operating point, it is not necessary to which extra start-up circuit, circuit structure are simple.

Description

Band-gap reference source circuit
Technical field
The present invention relates to a kind of manufacture of semiconductor integrated circuit, more particularly to a kind of band-gap reference source circuit.
Background technology
As shown in figure 1, it is existing band-gap reference source circuit figure；Existing band-gap reference source circuit includes：
Three image current branch roads, are made up of PMOS M101, M102 and M103 respectively, and be respectively configured to provide size into The electric current I of ratio101、I102And I103。
PNP transistor Q1 and PNP transistor Q102, PNP transistor Q102 emitter area are more than PNP transistor Q101 Emitter area, such PNP transistor Q101 base radio pressure is Vbe101It is greater than PNP transistor Q102 base radio pressure i.e. Vbe102；Resistance R101 is connected between PNP transistor Q101 emitter stage and ground, and resistance R102 one end ground connection, the other end lead to Resistance R100 connection PNP transistors Q102 emitter stage is crossed, resistance R103 is connected between PMOS M103 drain electrode and ground.
Two inputs of operational amplifier 101 connect respectively ground connection A and B, node A and B be respectively PMOS M101 and M102 drain electrode simultaneously connects with resistance R101 with R102 respectively, output end connection PMOS M101, M102 of operational amplifier 101 With M103 grid.The output end OUT of voltage on the basis of PMOS M103 drain electrode.
The principle of existing band-gap reference source circuit is：
The base radio pressure of two triodes is that Vbe difference is Δ VBE=(Vbe101-Vbe102)；
The electric current for flowing through PNP transistor Q102 is IQ102=Δ VBE/R100；
The electric current for flowing through resistance R102 is IR102=Vbe101/R102；
I103=I102=IQ102+IR102；
Δ VBE is positive temperature coefficient；Vbe101For negative temperature coefficient.Suitable R102 and R100 ratio are set, obtain zero The electric current of temperature coefficient.
Vout=I103 × R103；Obtain the voltage of zero-temperature coefficient.
R100 represents resistance R100 resistance value in above-mentioned formula, and R102 represents resistance R102 resistance value, and R103 is represented Resistance R103 resistance value, I101、I102And I103The size of current of corresponding image current branch road is represented respectively, and Vout represents output Reference voltage.
But prior art defect is 3 degeneracy points be present：
First degeneracy point be：Integrated circuit zero current, namely now I after upper electricity101、I102And I103All it is zero, circuit is not Work.
Second degeneracy point be：Triode zero current, namely now I after upper electricity101、I102And I103Although being all not zero, It is that electric current flows only through resistance R101 and R102, does not have electric current to flow through in PNP pipe Q101 and Q102.
3rd degeneracy point is desired stable operating point, now being capable of normal output reference voltage.
In the prior art, in order that circuit can be directly in the 3rd degeneracy point work, it is necessary to use additionally after upper electricity Start-up circuit, circuit structure are complicated.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of band-gap reference source circuit, only a stable job Point, it is not necessary to extra start-up circuit.
In order to solve the above technical problems, band-gap reference source circuit provided by the invention includes：Three image current branch roads, three Individual resistance, two PNP transistors and an operational amplifier.
The proportional relation of size of current of three image current branch roads, the emitter area of the second PNP transistor are N times of the emitter area of first PNP transistor, N are more than 1.
The output node of the emitter stage of first PNP transistor and the first image current branch road is connected, the first PNP The colelctor electrode and base stage of transistor are all grounded.
The first end of first resistor is connected with the output node of the second image current branch road, and the of the first resistor Two ends are connected with the emitter stage of second PNP transistor, the colelctor electrode and base earth of second PNP transistor.
Second resistance is connected between the output node and ground of the second image current branch road.
3rd resistor is connected between the output node and ground of the 3rd image current branch road.
One input of the output node connection operational amplifier of the first image current branch road, described second The output node of image current branch road connects another input of the operational amplifier；The output of 3rd image current branch road Output end of the node as reference voltage.
First bit transistor (native is in series between the first image current branch road and supply voltage Mosfet), second bit transistor is in series between the second image current branch road and supply voltage, in the 3rd mirror The 3rd bit transistor, the first bit transistor, described second one's own department or unit are in series between image current branch road and supply voltage The grid of transistor and the 3rd bit transistor all connects the output end of the operational amplifier；Described first one's own department or unit crystal The threshold voltage of pipe, second bit transistor and the 3rd bit transistor causes on the supply voltage close to zero Three image current branch roads all turn on after electricity.
Further improve is that the first image current branch route the first PMOS composition, first PMOS Source electrode connection connects with the first bit transistor, and the drain electrode of first PMOS is the first image current branch road Output node；The second image current branch route the second PMOS composition, the source electrode connection of second PMOS and described Second bit transistor connection, the drain electrode of second PMOS are the output node of the second image current branch road；It is described 3rd image current branch route the 3rd PMOS composition, the source electrode connection of the 3rd PMOS and the 3rd bit transistor Connection, the drain electrode of the 3rd PMOS are the output node of the second image current branch road.
Further improve is that the first bit transistor, second bit transistor and described 3rd one's own department or unit are brilliant Body Guan Douwei one's own department or units NMOS tube.
The present invention is brilliant by this bit transistor of being connected respectively in the supply voltage side of three image current branch roads, one's own department or unit Body pipe threshold electricity is that this bit transistor can not completely close close to zero volt, using the threshold value electricity of this bit transistor close to zero volt Characteristic so that three image current branch roads can all turn on after supply voltage unlatching, be deposited in the prior art so can eliminate Integrated circuit zero current degeneracy point；It is one in two PNP transistors that the present invention, which uses unilateral bypass resistance, simultaneously Discord resistor coupled in parallel so that the PNP transistor for resistor coupled in parallel of getting along well directly turns on after the conducting of corresponding image current branch road, institute So that the degeneracy of triode zero current present in prior art point can be eliminated；Therefore circuit of the present invention only has a stable job Point, it is not necessary to which extra start-up circuit, circuit structure are simple.
Brief description of the drawings
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description：
Fig. 1 is existing band-gap reference source circuit figure；
Fig. 2 is band-gap reference source circuit figure of the embodiment of the present invention.
Embodiment
As shown in Fig. 2 be band-gap reference source circuit figure of the embodiment of the present invention, band-gap reference source circuit bag of the embodiment of the present invention Include：Three image current branch roads, three resistance R0, R1 and R2, two PNP transistor Q1 and Q2 and operational amplifier 1；
The proportional relation of size of current of three image current branch roads, three mirror image electricity described in the embodiment of the present invention It is respectively I to flow the electric current that branch road provides1、I2And I3。
Second PNP transistor Q2 emitter area is N times of the first PNP transistor Q1 emitter area, and N is more than 1； This also causes the base emitter voltage V of the first PNP transistor Q1be1More than the base emitter voltage of the first PNP transistor Q1 Vbe2。
The emitter stage of the first PNP transistor Q1 and the output node of the first image current branch road are that node A is connected, institute The colelctor electrode and base stage for stating the first PNP transistor Q1 are all grounded GND.
First resistor R0 first end is that node B is connected with the output node of the second image current branch road, described One resistance R0 the second end is connected with the emitter stage of the second PNP transistor Q2, the colelctor electrode of the second PNP transistor Q2 With base earth GND.
Second resistance R1 is connected between the output node and ground GND of the second image current branch road.
3rd resistor R2 is connected between the output node and ground GND of the 3rd image current branch road.
The output node of the first image current branch road connects an input of the operational amplifier 1, and described the The output node of two image current branch roads connects another input of the operational amplifier 1；3rd image current branch road Output end OUT of the output node as reference voltage.
First bit transistor M4 is in series between the first image current branch road and supply voltage VDD, described Second bit transistor M5 is in series between second image current branch road and supply voltage VDD, in the 3rd image current branch The 3rd bit transistor M6, the first bit transistor M4, described second one's own department or unit crystalline substance are in series between road and supply voltage VDD Body pipe M5 and the 3rd bit transistor M6 grid all connect the output end of the operational amplifier 1；Described first one's own department or unit Transistor M4, second bit transistor M5 and the 3rd bit transistor M6 threshold voltage cause described close to zero Three image current branch roads all turn on after electricity on supply voltage VDD.
Preferably, the first image current branch route the first PMOS M1 compositions, the source electrode of the first PMOS M1 Connection connects with the first bit transistor M4, and the drain electrode of the first PMOS M1 is the first image current branch road Output node；The second image current branch route the second PMOS M2 compositions, the source electrode connection of the second PMOS M2 and Second bit transistor M5 connections, the drain electrode of the second PMOS M2 are the output section of the second image current branch road Point；The 3rd image current branch route the 3rd PMOS M3 compositions, the source electrode connection of the 3rd PMOS M3 and described the Three bit transistor M6 connections, the drain electrode of the 3rd PMOS M3 are the output node of the second image current branch road.
The first bit transistor M4, second bit transistor M5 and the 3rd bit transistor M6 are this Position NMOS tube.
In the embodiment of the present invention, three standard transistor M4, M5 and M6 threshold value electricity close to zero volt, so one's own department or unit crystal Pipe M4, M5 and M6 can not be completely closed, so supply voltage VDD unlatching after, this bit transistor M4, M5 and M6 can all turn on from And make it that three image current branch roads all turn on, so the degeneracy of integrated circuit zero current present in prior art can be eliminated Point.
The embodiment of the present invention uses unilateral bypass resistance, PNP transistor Q1 discord resistor coupled in parallel, so in the first mirror simultaneously PNP transistor Q1 can be turned on directly after the conducting of image current branch road, so triode zero current present in prior art can be eliminated Degeneracy point；Therefore circuit of the embodiment of the present invention only has a stable operating point, it is not necessary to extra start-up circuit, circuit structure Simply.
The present invention is described in detail above by specific embodiment, but these not form the limit to the present invention System.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, and these also should It is considered as protection scope of the present invention.

Claims (2)

  1. A kind of 1. band-gap reference source circuit, it is characterised in that, including：Three image current branch roads, three resistance, two PNP crystalline substances Body pipe and an operational amplifier；
    The proportional relation of size of current of three image current branch roads, the emitter area of the second PNP transistor is first N times of the emitter area of PNP transistor, N are more than 1；
    The output node of the emitter stage of first PNP transistor and the first image current branch road is connected, the first PNP crystal The colelctor electrode and base stage of pipe are all grounded；
    The first end of first resistor is connected with the output node of the second image current branch road, the second end of the first resistor and institute The emitter stage for stating the second PNP transistor is connected, the colelctor electrode and base earth of second PNP transistor；
    Second resistance is connected between the output node and ground of the second image current branch road；
    3rd resistor is connected between the output node and ground of the 3rd image current branch road；
    The output node of the first image current branch road connects an input of the operational amplifier, second mirror image The output node of current branch connects another input of the operational amplifier；The output node of 3rd image current branch road Output end as reference voltage；
    First bit transistor is in series between the first image current branch road and supply voltage, in second mirror image electricity Second bit transistor is in series between stream branch road and supply voltage, between the 3rd image current branch road and supply voltage It is in series with the 3rd bit transistor, the first bit transistor, second bit transistor and the 3rd one's own department or unit crystal The grid of pipe all connects the output end of the operational amplifier；The first bit transistor, second bit transistor and 3rd bit transistor is all one's own department or unit NMOS tube；The first bit transistor, second bit transistor and described Three image current branch roads all turn on after the threshold voltage of 3rd bit transistor causes electricity on the supply voltage close to zero, To eliminate the degeneracy of integrated circuit zero current point；
    First PNP transistor is no and resistor coupled in parallel, first PNP transistor can be in the first image current branch roads Directly turned on after conducting, to eliminate the degeneracy of triode zero current point；
    The elimination of the degeneracy point of integrated circuit zero current and the degeneracy point of triode zero current makes the band-gap reference source circuit only With a stable operating point.
  2. 2. band-gap reference source circuit as claimed in claim 1, it is characterised in that：The first image current branch route the first PMOS Pipe forms, and the source electrode of first PMOS connects with the first bit transistor, and the drain electrode of first PMOS is institute State the output node of the first image current branch road；The second image current branch route the second PMOS and formed, and described second The source electrode of PMOS connects with second bit transistor, and the drain electrode of second PMOS is the second image current branch The output node on road；The 3rd image current branch route the 3rd PMOS composition, the source electrode of the 3rd PMOS and described 3rd bit transistor connection, the drain electrode of the 3rd PMOS are the output node of the 3rd image current branch road.
CN201410632659.9A 2014-11-11 2014-11-11 Band-gap reference source circuit Active CN105320207B (en)

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Application Number Priority Date Filing Date Title
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CN105320207B true CN105320207B (en) 2017-12-05

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Publication number Priority date Publication date Assignee Title
CN107943182B (en) * 2017-11-30 2019-10-11 上海华虹宏力半导体制造有限公司 Band gap reference start-up circuit
CN108287584B (en) * 2018-01-17 2020-07-17 中国科学院微电子研究所 Band gap reference circuit
CN112015226B (en) * 2020-08-20 2022-08-12 南京物间科技有限公司 High-precision voltage reference source with wide power supply voltage range
CN114688961B (en) * 2022-04-02 2024-01-26 南通四建集团有限公司 Scaffold deformation detection system device

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CN101241378B (en) * 2007-02-07 2010-08-18 中国科学院半导体研究所 Output adjustable band-gap reference source circuit
CN101561689B (en) * 2008-12-04 2011-12-28 西安电子科技大学 Low voltage CMOS current source
CN101533288B (en) * 2009-04-09 2011-01-26 中国科学院微电子研究所 A closed-loop curvature compensation CMOS band-gap reference voltage source
CN101853042B (en) * 2010-05-28 2015-09-16 上海华虹宏力半导体制造有限公司 Band-gap reference circuit
CN102541146B (en) * 2010-12-07 2013-12-18 上海华虹Nec电子有限公司 Circuit for band-gap reference source for preventing leakage current of high-voltage metal oxide semiconductor (MOS) from increasing
CN202394144U (en) * 2011-12-27 2012-08-22 东南大学 Low temperature offset CMOS band-gap reference voltage source with index temperature compensation function

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