CN105316639A - 等离子体处理装置和等离子体处理方法 - Google Patents

等离子体处理装置和等离子体处理方法 Download PDF

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CN105316639A
CN105316639A CN201510455789.4A CN201510455789A CN105316639A CN 105316639 A CN105316639 A CN 105316639A CN 201510455789 A CN201510455789 A CN 201510455789A CN 105316639 A CN105316639 A CN 105316639A
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electrode
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plasma processing
film
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CN105316639B (zh
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木原嘉英
本田昌伸
久松亨
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Tokyo Electron Ltd
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Abstract

本发明提供一种等离子体处理装置和等离子体处理方法。目的在于在腔室内的电极上形成作为靶发挥功能的膜并对所形成的膜进行溅射。在该等离子体处理装置中，载置基板的第一电极与同上述第一电极相向地配置的第二电极以隔开规定的间隙的方式相向地配置，该等离子体处理装置具有：第一高频电源，其向上述第二电极供给第一高频电力；直流电源，其向上述第二电极供给直流电力；以及气体供给源，其向腔室内供给气体，上述第二电极具有利用通过供给第一气体和上述第一高频电力而生成的等离子体形成的反应产物的膜，上述第二电极成为利用通过供给第二气体、上述第一高频电力以及上述直流电力而生成的等离子体对上述反应产物的膜进行溅射的靶。

Description

等离子体处理装置和等离子体处理方法
技术领域
本发明涉及一种等离子体处理装置和等离子体处理方法。
背景技术
提出了一种对靶材施加直流电力来对靶材进行溅射以形成膜的方法(例如参照专利文献1、2)。例如，在专利文献1中公开了一种通过对靶材施加脉冲状的直流电力来对接触孔、通孔、配线槽等的内壁面形成膜的溅射成膜方法。
专利文献1：日本特开2009-280916号公报
专利文献2：日本特开2004-266112号公报
发明内容
发明要解决的问题
然而，在专利文献1、2中，对配置在腔室内的靶材执行溅射，因此难以对不具有适于预先配置在腔室内的靶材的膜使用上述溅射成膜方法。
例如，期望通过溅射对如包含碳(C)和氟(F)的膜那样的不具有适于预先配置在腔室内的靶材的膜进行成膜。
针对上述问题，在一个方面，本发明的目的在于在腔室内的电极上形成作为靶材发挥功能的膜并对所形成的膜进行溅射。
用于解决问题的方案
为了解决上述问题，根据一个方式，提供一种等离子体处理装置，载置基板的第一电极与同上述第一电极相向地配置的第二电极以隔开规定的间隙的方式相向地配置，该等离子体处理装置具有：第一高频电源，其向上述第二电极供给第一高频电力；直流电源，其向上述第二电极供给直流电力；以及气体供给源，其向腔室内供给气体，其中，上述第二电极具有利用通过供给第一气体和上述第一高频电力而生成的等离子体形成的反应产物的膜，上述第二电极成为利用通过供给第二气体、上述第一高频电力以及上述直流电力而生成的等离子体对上述反应产物的膜进行溅射的靶。
发明的效果
根据一个方式，能够在腔室内的电极上形成作为靶材发挥功能的膜并对所形成的膜进行溅射。
附图说明
图1是表示一个实施方式所涉及的等离子体处理装置的整体结构的一例的图。
图2是表示一个实施方式所涉及的等离子体处理方法的一例的流程图。
图3是表示一个实施方式所涉及的等离子体处理方法的效果的一例的图。
图4是表示一个实施方式所涉及的直流电压施加时间与掩膜的宽度之间的关系的图。
附图标记说明
10：等离子体处理装置；12：腔室；15：上部电极；16：电极支承体；18：高频电力源；19：直流电源；20：载置台(下部电极)；22：静电卡盘；26：聚流环；28：高频电力源；32：气体供给源；110：ArF抗蚀膜；120：防反射膜；130：有机膜；200：控制部。
具体实施方式
下面，参照附图来说明用于实施本发明的方式。此外，在本说明书和附图中，对实质上相同的结构标注相同的附图标记，由此省略重复的说明。
[等离子体处理装置的整体结构]
首先，参照图1来说明本发明的一个实施方式所涉及的等离子体处理装置10的整体结构。等离子体处理装置10具有例如由铝或者不锈钢等金属制成的圆筒型的腔室12。腔室12被接地。腔室12的上部敞开，在其开口处，经由绝缘体14设置有上部电极15。由此，形成将腔室12的开口封闭的盖部。
在腔室12内设置有载置半导体晶圆W(以下称作晶圆W)的载置台20。载置台20例如由铝构成，经由未图示的绝缘性的保持部被支承在腔室12中。在载置台20的上表面设置有载置晶圆W的静电卡盘22。静电卡盘22利用通过对静电卡盘22内部的电极板22a施加直流电力而产生的库仑力，将晶圆W静电吸附并保持在载置台20上。在晶圆W的周缘部设置有聚流环(日语：フォーカスリング)26。聚流环26由硅、石英形成。
对于载置台20，经由未图示的匹配器连接有高频电力源28。高频电力源28对载置台20施加例如400kHz以上的偏置用的高频电力RF(LF)。由此，载置台20还作为下部电极发挥功能。
在腔室12的顶部设置有上部电极15和支承上部电极15的电极支承体16。上部电极15与载置台20相向，在上部电极15的相向面上设置有多个气孔15a。上部电极15例如包括Si、SiC、石英等构件。电极支承体16支承上部电极15，该电极支承体16例如包括铝等导电性构件。
从气体供给源32输出的气体经过气体扩散室30后从多个气孔15a以喷淋状被供给到腔室12内。由此，上部电极15还作为喷头发挥功能。
从高频电力源18经由未图示的匹配器对上部电极15施加例如60MHz的等离子体生成用的高频电力RF(HF)。由此，来自高频电力源18的高频电力以电容方式施加于载置台20与喷头之间。高频电力源18供给频率高于高频电力源28的频率的高频电力。
此外，下部电极(载置台20)是载置晶圆W的第一电极的一例。另外，上部电极15是与下部电极相向地配置的第二电极的一例。另外，高频电力源18是向上部电极15供给第一高频电力的第一高频电源的一例。另外，高频电力源28是供给频率低于第一高频电力的频率的第二高频电力的第二高频电源的一例。
对上部电极15施加从直流电源19供给的直流(DC)电力来执行后述的溅射处理。在该情况下，优选的是上部电极15由硅(Si)材料形成。另一方面，也可以对上部电极15施加例如400kHz左右的偏置用的高频电力来执行溅射处理。在该情况下，上部电极15未必需要由硅形成，也可以使用石英形成。此外，直流电源19是向上部电极15供给直流电力的直流电源的一例。
在载置台20的侧壁与腔室12的侧壁之间形成有排气路34。在排气路34中设置有折流板36，以调整气体的流动。腔室12内的气体经过排气路34后通过未图示的排气装置被排出到腔室12外，由此，将腔室12内减压到规定的真空度。
对等离子体处理装置10设置有控制装置整体的动作的控制部200。控制部200具有CPU(CentralProcessingUnit：中央处理单元)205、ROM(ReadOnlyMemory：只读存储器)210、RAM(RandomAccessMemory：随机存取存储器)215以及HDD(HardDiskDrive：硬盘驱动器)220。CPU205按照各种制程来执行后述的等离子体处理。在制程中记载有作为针对各处理的装置的控制信息的处理时间、压力(气体的排气)、高频电力、电压、各种处理气体流量、腔室内温度(上部电极温度、腔室的侧壁温度、ESC温度等)等。此外，也可以将制程存储在RAM215、HDD220、未图示的半导体存储器中。另外，还可以将制程保存在CD-ROM、DVD等便携性的能够由计算机读取的存储介质中。
以上说明了本实施方式所涉及的等离子体处理装置10的整体结构。在具有所述结构的等离子体处理装置10中，首先，将晶圆W从设置于腔室12的闸阀40搬入并保持在静电卡盘22上。在该状态下供给气体和高频电力，利用所生成的等离子体在同一腔室12内按顺序执行后述的如下处理：(1)对上部电极的成膜处理、(2)通过溅射进行的对晶圆W的成膜处理、(3)蚀刻处理、(4)无晶圆干洗处理。
(1)对上部电极的成膜处理
在本实施方式所涉及的对上部电极15的成膜处理中，等离子体处理装置10向上部电极15供给成膜用的气体(第一气体)和高频电力RF(HF)来生成等离子体。利用等离子体的作用，主要在上部电极15的下表面形成反应产物的膜。
在本实施方式中，上部电极15与载置台20之间的间隙被设定为80mm以上。通过这样将间隙较大地设定为80mm以上，使得在腔室12内为高压状态(例如13.3Pa以上)的情况下气体密度增加而气体分子的平均自由行程变短，从而分子间的碰撞频率变高。由于等离子体内部的自由基以及离子间等的碰撞频率也变高，所以会导致等离子体失活而无法扩散，因此主要在上部电极15的附近生成等离子体。因此，从等离子体生成的反应产物几乎都堆积在上部电极15的与载置台20相向的等离子体面上，而不会到达晶圆W的上表面。由此，能够在上部电极15上形成反应产物的膜。
在上部电极15上成膜的反应产物可以是硅(Si)膜、碳(C)膜、包含碳(C)和氟(F)的膜(以下也称作“CF系膜”。)、SiO2膜等含硅膜、含碳膜等。
例如，在上部电极15上形成CF系膜的情况下，作为向腔室12内供给的气体的一例，列举出C4F8气体、CHF3气体以及CH2F2气体的单一气体或者包含这些气体中的至少一种气体的混合气体。
尤其是，CF系膜不存在适于预先配置在腔室12内的靶材。因此，本实施方式所涉及的等离子体处理装置10的特征之一在于，在腔室12内形成CF系膜之后在同一腔室12内对CF系膜进行溅射，由此能够与靶材的材质无关地进行溅射处理。
此外，在上部电极15为石英(SiO2)的情况下，通过将反应产物的膜设为硅膜或者含硅膜，能够在晶圆W上形成SiO膜。
(2)通过溅射进行的对晶圆W的成膜处理
在通过溅射进行的对晶圆W的成膜处理中，等离子体处理装置10通过向上部电极15供给溅射用的气体(第二气体)、高频电力RF(HF)以及直流电力来生成等离子体。利用等离子体的作用(特别是利用等离子体中的离子的轰击(日文：叩き込み))对形成在上部电极15上的反应产物的膜进行溅射。由此，在腔室12内在上部电极15上形成反应产物的膜之后，在同一腔室12内对上部电极15上的反应产物的膜进行溅射。被溅射出来的反应产物堆积在载置于载置台20的晶圆W上，由此形成均匀性高的薄膜。
作为向腔室12内供给的溅射用的气体，列举出氩气(Ar)的单一气体或者氩气与氢气(H2)的混合气体等非活性气体的单一气体或者混合气体。
通过控制对上部电极15施加的直流电力的值，能够控制形成于上部电极15的下表面和腔室12的内壁的鞘(sheath)的厚度。例如，当对上部电极15施加直流电力值时，能够使鞘的厚度比不施加直流电力值的情况下的鞘的厚度厚。另外，越加大直流电力值，则能够使鞘的厚度越厚。鞘的厚度越厚，则鞘电压越高，等离子体中的离子在鞘内越被加速。其结果是，能够使离子物理性地强烈撞击上部电极15的表面，从而能够提高溅射的效力。一般来说，鞘的厚度是由加速电压(DC电压或者频率低于1MHz的高频电力RF(LF))、等离子体密度、等离子体的电子温度决定的。因此，如本实施方式那样，通过控制直流电力值来操作鞘电压，由此能够控制溅射。
这样，在本实施方式所涉及的等离子体处理装置10中，将如CF系膜那样不适于预先配置在腔室12内的膜作为靶材成膜在上部电极15上。接着，对上部电极15上的膜进行溅射，从上部电极15脱离的(被撞飞的)上部电极15上的膜中的原子、分子飞过上部电极15与载置台20之间后到达晶圆W并附着在晶圆W上，从而在晶圆W上形成膜。
例如，在晶圆W上形成有抗蚀膜的图案的情况下，通过溅射而从上部电极15上的膜脱离的原子、分子飞来并在该抗蚀膜上形成膜。由此，能够使抗蚀膜的宽度扩大与所生成的膜的厚度相应的量。例如，在反应产物的膜为CF系膜的情况下，在抗蚀膜上形成CF系膜。另外，形成在抗蚀膜上的膜是均匀的薄膜。由此，在通过下一工序执行将抗蚀膜作为掩膜的蚀刻处理的情况下，蚀刻出的孔的直径、线的宽度变窄与抗蚀膜的宽度的扩大量相应的量，由此能够进行微细加工。
这样，在本实施方式中，在上部电极15上形成作为靶材的反应产物的膜，之后利用通过对该膜进行溅射而扩散到晶圆W侧的分子等在晶圆W上形成均匀的薄膜。相对于此，也考虑通过CDV(ChemicalVaporDeposition：化学气相沉积)在晶圆W上直接形成所期望的膜。
作为微细加工的方法之一，公知一种图案的收缩(shrink)技术，该技术能够形成比通过光刻法形成的图案更微细的图案。在该技术中，通过利用堆积性的蚀刻气体进行等离子体蚀刻，一边将所期望的堆积物堆积在所形成的图案上一边进行图案的蚀刻。由此，能够减小所蚀刻出的孔的直径、线的宽度。然而，在通过等离子体蚀刻而堆积的堆积物中，堆积物的附着存在各向异性，并且堆积量根据图案的疏密而产生偏差。具体地说，存在如下问题：在图案稀疏的部分，堆积量变多，从而膜的厚度变厚，在图案密集的部分，堆积量变少，从而膜的厚度变薄。当像这样形成不均匀的膜时，对下一工序中的蚀刻的影响大，预计在应对近年来以及将来的对晶圆W的进一步的微细加工的需要这一方面存在困难。
尤其是近年来，进一步微细化的要求提高，另外，根据ITRS(InternationalTechnologyRoadmapforSemiconductors：国际半导体技术蓝图)，预计微细化会逐年推进。与此相对，在使用堆积性的蚀刻气体一边进行蚀刻一边成膜的技术中，越来越难以形成满足微细化的要求的均匀的膜。
另外，在最新的ArF浸液曝光技术中，认为线的hp(HalfPitch：半节距)为40nm左右的加工是极限尺寸，为了形成更微细的图案，近年来采取了所谓双重图案化(日文：ダブルパターニング)等方法。像这样，根据ITRS、市场需求来看，形成比通过光刻法形成的图案更微细的图案的收缩技术变得越来越重要。
(3)蚀刻处理
因此，本实施方式所涉及的等离子体处理装置10实现了在同一腔室12内使用靶的成膜处理和溅射处理的收缩技术。由此，能够在抗蚀膜上形成均匀的膜，在作为下一工序的蚀刻处理中能够高精度地进行满足微细化的要求的蚀刻。特别是，在本实施方式中，使用双重图案化技术在微细化的抗蚀膜上形成几nm～几十nm左右的均匀的膜，由此适于作为在使用双重图案化技术的微细加工中谋求进一步的微细化的技术。
(4)无晶圆干洗处理
优选的是，在搬出被蚀刻的晶圆W之后执行无晶圆干洗处理(WLDC)。例如，能够通过O2等离子体对腔室12内的CF膜进行清洗。此外，(1)～(4)的处理均在同一等离子体处理装置10内执行。
[等离子体处理方法]
接着，参照图2来说明包括以上所说明的(1)～(4)的等离子体处理的本实施方式所涉及的等离子体处理方法。此外，能够在图1的等离子体处理装置10或者其它等离子体处理装置中执行本实施方式所涉及的等离子体处理方法。
当开始本实施方式所涉及的等离子体处理方法时，首先将晶圆W搬入到腔室12内并载置于载置台20(步骤S10)。
接着，将包含C和F的气体(CF系气体)导入到腔室12内，并对上部电极15施加高频电力RF(HF)(步骤S12)。由此，从CF系气体生成包含C、F的自由基、离子的等离子体。
接着，利用所生成的等离子体在上部电极15上形成CF系膜(步骤S14)。
接着，将氩气(Ar)导入到腔室12内，并对上部电极15施加高频电力RF(HF)和直流电力(DC)(步骤S16)。由此，从氩气生成等离子体。
接着，利用所生成的等离子体对上部电极15上的CF系膜进行溅射(步骤S18)。
接着，通过溅射而从CF系膜脱离的原子、分子飞来并附着在晶圆W上，由此在形成于晶圆W的抗蚀膜(掩膜)上形成CF系的薄膜(步骤S20)。例如，在图3中图示了形成在晶圆W上的层叠膜的一例。在此，在晶圆W上形成有有机膜130、防反射膜120、形成有图案的ArF抗蚀膜110。ArF抗蚀膜110作为掩膜发挥功能。在图3中，作为一例，在ArF抗蚀膜110上形成有几nm的Si膜的薄膜。这样，在本实施方式所涉及的等离子体处理方法中，能够形成均匀性高的几nm左右的薄膜。在图4中示出直流电压的施加时间与掩膜的宽度之间的关系。根据该图可知，通过将直流电压施加大约30秒，能够在掩膜上形成2.5nm左右的薄膜，能够将掩膜的宽度扩大5nm左右。通过这样，在本实施方式所涉及的等离子体处理方法中，通过对在晶圆W上形成为图案的掩膜形成均匀的薄膜来控制掩膜的宽度W，能够在下一工序的蚀刻中实现进一步的微细化。
返回到图2，接着，执行蚀刻处理(步骤S22)。在执行蚀刻处理后，从腔室12搬出晶圆W(步骤S24)。接着，执行无晶圆干洗处理(步骤S26)，结束本处理。
以上说明了本实施方式所涉及的等离子体处理方法。但是，以上所说明的等离子体处理方法是一例。例如，在步骤S16中对上部电极15施加了等离子体生成用的高频电力RF(HF)和直流电力，但不限于此。例如，也可以在步骤S16中对上部电极15施加等离子体生成用的高频电力RF(HF)，并且代替直流电力而对上部电极15施加低频电力。
[效果例]
如以上所说明的那样，根据本实施方式所涉及的等离子体处理方法，在上部电极15上形成作为溅射的靶材发挥功能的膜，通过对该膜进行溅射，能够在形成于晶圆W的图案上形成具有均匀性的薄膜。由此，能够控制掩膜的宽度，能够在下一工序中使用进行了控制的掩膜对晶圆W实施微细加工。
另外，在本实施方式所涉及的等离子体处理方法中，对于不具有适于预先配置在腔室内的靶材的膜，也通过如上述那样在上部电极上形成所期望的膜来能够进行与靶材的材质无关的溅射。
另外，在利用CVD的成膜中，所形成的膜的厚度根据图案的疏密而产生偏差，预计难以进行应对近年来以及今后的微细化的要求的对晶圆W的微细加工。与此相对，在本实施方式所涉及的等离子体处理方法中，能够与图案的疏密无关地形成具有均匀性的薄膜。因此，根据本实施方式所涉及的等离子体处理方法，能够应对近年来以及今后的进一步微细化的要求来对晶圆W实施微细加工。
另外，能够在同一等离子体处理装置10的腔室12内对上部电极15进行成膜处理、溅射处理、蚀刻处理以及清洗处理，由此能够抑制装置成本。
以上，通过上述实施方式说明了等离子体处理装置和等离子体处理方法，但本发明所涉及的等离子体处理装置和等离子体处理方法不限定于上述实施方式，能够在本发明的范围内进行各种变形和改良。
例如，能够实施本发明所涉及的等离子体处理方法的等离子体处理装置不仅可以是电容耦合型等离子体(CCP：CapacitivelyCoupledPlasma)装置，也可以是其它等离子体处理装置。作为其它等离子体处理装置，列举出电感耦合型等离子体(ICP：InductivelyCoupledPlasma)装置、使用了径向线缝隙天线的CVD(ChemicalVaporDeposition)装置、螺旋波激发型等离子体(HWP：HeliconWavePlasma)装置、电子回旋共振等离子体(ECR：ElectronCyclotronResonancePlasma)装置等。
另外，本发明所涉及的等离子体处理装置具备对上部电极施加第一高频电力的高频电源。除此以外，本发明所涉及的等离子体处理装置还具有对上部电极施加直流电力的直流电源和对下部电极施加频率低于第一高频电力的频率的电力的高频电源中的至少一个即可。
另外，由本发明所涉及的等离子体处理装置处理的基板不限于晶圆，例如也可以是平板显示器(FlatPanelDisplay)用的大型基板、EL元件或者太阳能电池用的基板。

Claims (8)

1.一种等离子体处理装置，载置基板的第一电极与同上述第一电极相向地配置的第二电极以隔开规定的间隙的方式相向地配置，
该等离子体处理装置具有：
第一高频电源，其向上述第二电极供给第一高频电力；
直流电源，其向上述第二电极供给直流电力；以及
气体供给源，其向腔室内供给气体，
其中，上述第二电极具有利用通过供给第一气体和上述第一高频电力而生成的等离子体形成的反应产物的膜，
上述第二电极成为利用通过供给第二气体、上述第一高频电力以及上述直流电力而生成的等离子体对上述反应产物的膜进行溅射的靶。
2.根据权利要求1所述的等离子体处理装置，其特征在于，
还具有第二高频电源，该第二高频电源向上述第一电极供给频率低于上述第一高频电力的频率的第二高频电力，
在对上述反应产物的膜进行溅射时，供给上述第二高频电力。
3.根据权利要求1或2所述的等离子体处理装置，其特征在于，
上述规定的间隙为80mm以上。
4.根据权利要求1至3中的任一项所述的等离子体处理装置，其特征在于，
上述反应产物的膜包含碳C和氟F。
5.根据权利要求1至4中的任一项所述的等离子体处理装置，其特征在于，
上述等离子体处理装置在上述腔室内在上述第二电极上形成上述反应产物的膜之后，在同一腔室内利用被溅射出来的反应产物在载置于上述第一电极的基板上成膜。
6.一种等离子体处理装置，载置基板的第一电极与同上述第一电极相向地配置的第二电极以隔开规定的间隙的方式相向地配置，
该等离子体处理装置具有：
第一高频电源，其向上述第二电极供给第一高频电力；
第二高频电源，其向上述第一电极供给频率低于上述第一高频电力的频率的第二高频电力；以及
气体供给源，其向腔室内供给气体，
其中，上述第二电极具有利用通过供给第一气体和上述第一高频电力而生成的等离子体形成的反应产物的膜，
向上述第一电极供给上述第二高频电力，
上述第二电极成为利用通过供给第二气体、上述第一高频电力以及上述第二高频电力而生成的等离子体对上述反应产物的膜进行溅射的靶。
7.一种等离子体处理方法，使用等离子体处理装置来执行等离子体处理，在该等离子体处理装置中，载置基板的第一电极与同上述第一电极相向地配置的第二电极以隔开规定的间隙的方式相向地配置，
该等离子体处理方法包括以下工序：
向腔室内供给第一气体，向上述第二电极供给第一高频电力，利用所生成的等离子体来形成反应产物的膜；以及
向上述腔室内供给第二气体，向上述第二电极供给上述第一高频电力和直流电力，利用所生成的等离子体对上述反应产物的膜进行溅射。
8.一种等离子体处理方法，使用等离子体处理装置来执行等离子体处理，在该等离子体处理装置中，载置基板的第一电极与同上述第一电极相向地配置的第二电极以隔开规定的间隙的方式相向地配置，
该等离子体处理方法包括以下工序：
向腔室内供给第一气体，向上述第二电极供给第一高频电力，利用所生成的等离子体来形成反应产物的膜；以及
向上述腔室内供给第二气体，向上述第二电极供给第一高频电力，向上述第一电极供给第二高频电力，利用所生成的等离子体对上述反应产物的膜进行溅射。
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