CN105280743A - 一种能提高发光强度的上转换发光结构及其制备方法 - Google Patents
一种能提高发光强度的上转换发光结构及其制备方法 Download PDFInfo
- Publication number
- CN105280743A CN105280743A CN201510838910.1A CN201510838910A CN105280743A CN 105280743 A CN105280743 A CN 105280743A CN 201510838910 A CN201510838910 A CN 201510838910A CN 105280743 A CN105280743 A CN 105280743A
- Authority
- CN
- China
- Prior art keywords
- layer
- conversion
- dielectric layer
- substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 72
- 238000004020 luminiscence type Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000011787 zinc oxide Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000004544 sputter deposition Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000004528 spin coating Methods 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052737 gold Inorganic materials 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 229910052709 silver Inorganic materials 0.000 claims abstract description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 15
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 15
- 229960001296 zinc oxide Drugs 0.000 claims description 15
- 239000000843 powder Substances 0.000 claims description 12
- 238000003756 stirring Methods 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims description 6
- -1 rare earth ion Chemical class 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 229920000620 organic polymer Polymers 0.000 claims description 4
- 239000005357 flat glass Substances 0.000 claims description 3
- QBXVOLFMYZOYKI-UHFFFAOYSA-J potassium;lanthanum(3+);tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[K+].[La+3] QBXVOLFMYZOYKI-UHFFFAOYSA-J 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 2
- HYXRNUXQERMPQH-UHFFFAOYSA-N [K].[La] Chemical compound [K].[La] HYXRNUXQERMPQH-UHFFFAOYSA-N 0.000 abstract 2
- 238000003682 fluorination reaction Methods 0.000 abstract 2
- 230000007704 transition Effects 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 58
- 229910052700 potassium Inorganic materials 0.000 description 14
- 239000011591 potassium Substances 0.000 description 14
- 239000010409 thin film Substances 0.000 description 14
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 14
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000001748 luminescence spectrum Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000005303 weighing Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000000536 complexating effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7704—Halogenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
Abstract
本发明公开了一种能提高发光强度的上转换发光结构及其制备方法,其由衬底、金属薄膜层、介电层和上转换发光层组成,是将Ag或Au采用真空蒸发法或直流溅射法沉积在玻璃或硅衬底上形成金属薄膜层,然后采用射频磁控溅射法溅射一层氧化锌薄膜,最后在其上旋涂一层稀土离子掺杂的氟化镧钾制备而成。本发明以稀土离子掺杂的氟化镧钾作为上转换发光材料,以增强上转换发光结构的发光强度,并通过控制介电层氧化锌薄膜的厚度,进而调控所得上转换发光结构的发光强度,实现上转换发光强度的增强。本发明所得上转换发光结构可应用于生物医学、发光器件和太阳能电池等领域中,且其制备工艺简单,易操作,具有广泛的应用前景。
Description
技术领域
本发明属于上转换发光材料技术领域,具体涉及一种能提高发光强度的上转换发光结构及其制备方法。
背景技术
上转换氟化物在生物医学、发光器件、固体激光器、太阳能电池等领域有着广泛的应用前景,已成为当前的研究热点之一。目前,稀土离子掺杂的NaYF4被认为是最有潜力的发光材料之一。目前文献报道的氟化物有稀土掺杂NaYF4、LiYF4等发光薄膜。KLaF4(262cm-1)具比NaYF4(360cm-1)更低的声子能量,因此其薄膜应具有优良的上转换性能,但目前还未见KLaF4薄膜上转换发光性能的研制报道。
近年来,研究人员发现上转换发光薄膜可以通过与贵金属材料表面耦合而提高荧光强度,并可在上转换材料和金属薄膜间***一层透光的介质层,通过控制介质层材料的厚度,进而调控薄膜的发光强度。因此制备KLaF4薄膜且采用简单易行的方法增强KLaF4薄膜的上转换发光强度,具有重要的潜在应用价值。
发明内容
本发明的目的在于提供一种能提高发光强度的上转换发光结构及其制备方法,其以稀土离子掺杂的氟化镧钾作为上转换发光材料,以增强上转换发光结构的发光强度,并在金属薄膜层与上转换发光层间***一层介电层,通过控制介电层厚度进而调控所得上转换发光结构的发光强度。
为实现上述目的,本发明采用如下技术方案:
一种能提高发光强度的上转换发光结构,其由衬底、金属薄膜层、介电层和上转换发光层组成,通过控制介电层的厚度,可实现发光强度的调控与增强。
所述衬底为玻璃片或硅片;
所述金属薄膜层为Ag薄膜层或Au薄膜层,其厚度为10~20nm;
所述介电层为氧化锌薄膜,其厚度为5~25nm;
所述上转换发光层是以稀土离子掺杂的氟化镧钾为上转换发光材料,将其均匀分散在有机高分子基质中,经旋涂制备而成,其厚度为50~100nm。
所述能提高发光强度的上转换发光结构的制备方法,是先在衬底上制备一层金属薄膜层,然后在金属薄膜层上制备一层介电层,最后将上转换发光材料制备成溶液,均匀旋涂于介电层上制得上转换发光层。
所述金属薄膜层是将Ag或Au采用真空蒸发法或直流溅射法沉积在衬底上制备而成。
所述介电层是采用射频磁控溅射法在沉积有金属薄膜层的衬底上溅射一层氧化锌薄膜;
所述射频磁控溅射法的工艺条件为:采用氧化锌陶瓷靶,本底真空度小于6×10-4Pa、靶基距75mm、氩气气体流量为60sccm、溅射气压为0.5Pa、溅射功率为100W;
所述上转换发光层的制备方法包括以下步骤:
(1)将聚甲基丙烯酸甲酯(PMMA)粉末50mg放入搅拌瓶中,加入4mL氯仿溶液搅拌30min,然后加入30~50mg上转换发光材料粉末,继续搅拌24h,得到透明的胶体溶液;
(2)将所得胶体溶液旋涂在沉积有介电层及金属薄膜层的衬底上制备而成;
所述旋涂的条件为:前转转速650rmp、时间12s;后转转速2000rmp、时间30s。
本发明上转换发光层为有机无机复合的上转换发光薄膜,其是利用聚合作用,将上转换稀土掺杂的KLaF4纳米晶均匀分散在有机高分子主体基质聚甲基丙烯酸甲酯(PMMA)中而形成薄膜,其中稀土掺杂的KLaF4在薄膜中的重量百分比为30~50%。
本发明相对于现有技术有以下优点:
本发明提供了一种能提高发光强度的上转换发光结构,其利用金属薄膜的表面等离子效应,并通过上转换材料、介电材料与贵金属有机地结合,提高了稀土离子掺杂KLaF4薄膜的上转换发光强度;同时,本发明可通过物理方法如磁控溅射准确控制介电层的薄膜厚度,以实现发光强度的调控与增强,解决了现有上转换材料发光强度偏低的问题,且制备工艺简单,成本较低,具有很强的实用性和广泛的应用前景。
附图说明
图1为本发明能提高发光强度的上转换发光结构的示意图,其中:1为上转换发光层,2为介电层,3为金属薄膜层,4为衬底。
图2为本发明所制备上转换发光结构中上转换发光层的SEM图。
图3为实施例1和实施例2制备的Ag薄膜/氟化镧钾薄膜发光结构在400~750nm波段的上转换发光光谱对比图。
图4为实施例3和实施例4制备的Au薄膜/氟化镧钾薄膜发光结构在400~750nm波段的上转换发光光谱对比图。
具体实施方式
一种能提高发光强度的上转换发光结构,其以玻璃片或硅片为衬底;Ag或Au为金属薄膜层;以氧化锌薄膜为介电层;将10%Al掺杂的六方相KLaF4:Yb3+/Er3+纳米晶均匀分散在有机高分子基质PMMA中,经旋涂制备成上转换发光层;依次叠合形成所述上转换发光结构;所述金属薄膜层的厚度为10~20nm,介电层的厚度为5~25nm,上转换发光层的厚度为50~100nm,其结构示意图见图1,其上转换发光层的SEM图见图2。
为了使本发明所述的内容更加便于理解,下面结合具体实施方式对本发明所述的技术方案做进一步的说明,但是本发明不仅限于此。
实施例1不含ZnO介电层的Ag薄膜/氟化镧钾薄膜发光结构
(1)称量聚甲基丙烯酸甲酯(PMMA)粉末50mg放置于搅拌瓶中,然后加入4mL氯仿溶剂,搅拌30分钟,然后加入30~50mg掺铝KLaF4:Yb3+/Er3+粉末,继续搅拌24h,得到透明的胶体溶液;
(2)清洗普通玻璃衬底并烘干;
(3)利用真空蒸发法在玻璃衬底上沉积金属Ag薄膜,厚度约为10~20nm;
(4)在Ag薄膜上旋涂步骤(1)所得胶体溶液,旋涂条件为:前转转速650rmp、时间12s;后转转速2000rmp、时间30s;
(5)待薄膜干后,重复(4)的步骤,得到厚度为50~100nm的上转换发光层。
实施例2含ZnO介电层的Ag薄膜/氟化镧钾薄膜发光结构
(1)称量聚甲基丙烯酸甲酯(PMMA)粉末50mg放置于搅拌瓶中,然后加入4mL氯仿溶剂,搅拌30分钟,然后加入30~50mg掺铝KLaF4:Yb3+/Er3+粉末,继续搅拌24h,得到透明的胶体溶液;
(2)清洗普通玻璃衬底并烘干;
(3)利用真空蒸发法在玻璃衬底上沉积金属Ag薄膜,厚度约为10~20nm;
(4)在金属Ag薄膜上采用射频磁控溅射法沉积氧化锌,其溅射工艺条件为:采用氧化锌陶瓷靶,本底真空度小于6×10-4Pa、靶基距75mm、Ar气体流量为60sccm、溅射气压为0.5Pa、溅射功率为100W,得到的氧化锌薄膜厚度为5~25nm;
(5)在氧化锌薄膜上旋涂步骤(1)所得胶体溶液,旋涂条件为:前转转速650rmp、时间12s;后转转速2000rmp、时间30s;
(6)待薄膜干后,重复(5)的步骤,得到厚度为50~100nm的上转换发光层。
图3为实施例1制备的不含ZnO介电层的Ag薄膜/氟化镧钾薄膜发光结构,与实施例2制备的含ZnO介电层的Ag薄膜/氟化镧钾薄膜发光结构在400~750nm波段的上转换发光光谱对比图。由图3可见,与不含ZnO介电层的Ag薄膜/氟化镧钾薄膜发光结构相比,在980nm波长激发下,实施例2制得的含ZnO介电层的Ag薄膜/氟化镧钾薄膜发光结构的上转换发光强度明显提高,其绿光发光强度提高了15倍,红光发光强度提高了10倍。
实施例3不含ZnO介电层的Au薄膜/氟化镧钾薄膜发光结构
(1)称量聚甲基丙烯酸甲酯(PMMA)粉末50mg放置于搅拌瓶中,然后加入4mL氯仿溶剂,搅拌30分钟,然后加入30~50mg掺铝KLaF4:Yb3+/Er3+粉末,继续搅拌24h,得到透明的胶体溶液;
(2)清洗普通玻璃衬底并烘干;
(3)利用真空蒸发法在玻璃衬底上沉积金属Au薄膜,厚度约为10~20nm;
(4)在Au薄膜上旋涂步骤(1)所得胶体溶液,旋涂条件为:前转转速650rmp、时间12s;后转转速2000rmp、时间30s;
(5)待薄膜干后,重复(4)的步骤,得到厚度为50~100nm的上转换发光层。
实施例4含ZnO介电层的Au薄膜/氟化镧钾薄膜发光结构
(1)称量聚甲基丙烯酸甲酯(PMMA)粉末50mg放置于搅拌瓶中,然后加入4mL氯仿溶剂,搅拌30分钟,然后加入30~50mg掺铝KLaF4:Yb3+/Er3+粉末,继续搅拌24h,得到透明的胶体溶液;
(2)清洗普通玻璃衬底并烘干;
(3)利用真空蒸发法在玻璃衬底上沉积金属Au薄膜,厚度约为10~20nm;
(4)在金属Au薄膜上采用射频磁控溅射法沉积氧化锌,其溅射工艺条件为:采用氧化锌陶瓷靶,本底真空度小于6×10-4Pa、靶基距75mm、Ar气体流量为60sccm、溅射气压为0.5Pa、溅射功率为100W,得到氧化锌薄膜的厚度为5~25nm;
(5)在氧化锌薄膜上旋涂步骤(1)所得胶体溶液,其条件为:前转转速650rmp、时间12sec;后转转速2000rmp、时间30sec;
(6)待薄膜干后,重复(5)的步骤,得到厚度为50~100nm的上转换发光层。
图4为实施例3制备的不含ZnO介电层的Au薄膜/氟化镧钾薄膜发光结构,与实施例4制备的含ZnO介电层的Au薄膜/氟化镧钾薄膜发光结构在400~750nm波段的上转换发光光谱对比图。由图4可见,与不含ZnO介电层的Au薄膜/氟化镧钾薄膜发光结构相比,在980nm波长激发下,含ZnO介电层的Au薄膜/氟化镧钾薄膜发光结构的上转换发光效率明显提高,绿光发光强度提高了7.1倍,红光发光强度提高了7倍。
以上所述仅为本发明的较佳实施例,凡依本发明申请专利范围所做的均等变化与修饰,皆应属本发明的涵盖范围。
Claims (6)
1.一种能提高发光强度的上转换发光结构,其特征在于:所述上转换发光结构由衬底、金属薄膜层、介电层和上转换发光层组成。
2.根据权利要求1所述能提高发光强度的上转换发光结构,其特征在于:所述衬底为玻璃片或硅片;
所述金属薄膜层为Ag薄膜层或Au薄膜层,其厚度为10~20nm;
所述介电层为氧化锌薄膜,其厚度为5~25nm;
所述上转换发光层是以稀土离子掺杂的氟化镧钾为上转换发光材料,将其均匀分散在有机高分子基质中,经旋涂制备而成,其厚度为50~100nm。
3.一种如权利要求1所述能提高发光强度的上转换发光结构的制备方法,其特征在于:先在衬底上制备一层金属薄膜层,然后在金属薄膜层上制备一层介电层,最后将上转换发光材料制备成溶液,均匀旋涂于介电层上制得上转换发光层。
4.根据权利要求3所述能提高发光强度的上转换发光结构的制备方法,其特征在于:所述金属薄膜层是将Ag或Au采用真空蒸发法或直流溅射法沉积在衬底上制备而成。
5.根据权利要求3所述能提高发光强度的上转换发光结构的制备方法,其特征在于:所述介电层是采用射频磁控溅射法在沉积有金属薄膜层的衬底上溅射一层氧化锌薄膜;
所述射频磁控溅射法的工艺条件为:采用氧化锌陶瓷靶,本底真空度小于6×10-4Pa、靶基距75mm、氩气气体流量为60sccm、溅射气压为0.5Pa、溅射功率为100W。
6.根据权利要求3所述能提高发光强度的上转换发光结构的制备方法,其特征在于:所述上转换发光层的制备方法包括以下步骤:
(1)在聚甲基丙烯酸甲酯粉末中加入氯仿溶液,搅拌30min,然后加入上转换发光材料粉末,继续搅拌24h,得到透明的胶体溶液;
(2)将所得胶体溶液旋涂在沉积有介电层及金属薄膜层的衬底上制备而成;
所用聚甲基丙烯酸甲酯与上转换发光材料的重量比为1:0.6~1;
所述旋涂的条件为:前转转速650rmp、时间12s;后转转速2000rmp、时间30s。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510838910.1A CN105280743B (zh) | 2015-11-27 | 2015-11-27 | 一种能提高发光强度的上转换发光结构及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510838910.1A CN105280743B (zh) | 2015-11-27 | 2015-11-27 | 一种能提高发光强度的上转换发光结构及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105280743A true CN105280743A (zh) | 2016-01-27 |
CN105280743B CN105280743B (zh) | 2017-05-10 |
Family
ID=55149427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510838910.1A Expired - Fee Related CN105280743B (zh) | 2015-11-27 | 2015-11-27 | 一种能提高发光强度的上转换发光结构及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN105280743B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109929203A (zh) * | 2019-02-27 | 2019-06-25 | 南京航空航天大学 | 一种波长转换发光薄膜的制备方法 |
CN110635047A (zh) * | 2019-09-23 | 2019-12-31 | 吉林大学 | 一种光电探测器及其制备方法 |
CN111175895A (zh) * | 2019-12-28 | 2020-05-19 | 中国船舶重工集团公司第七一七研究所 | 一种稀土荧光增强天线及其制备方法 |
CN112300800A (zh) * | 2020-11-05 | 2021-02-02 | 福州大学 | 一种可控增强上转换红光发射的复合薄膜材料及其制备方法 |
CN112723749A (zh) * | 2021-03-03 | 2021-04-30 | 哈尔滨工程大学 | 一种含有闪烁纳米晶体的高透明微晶玻璃及制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102610685A (zh) * | 2011-03-30 | 2012-07-25 | 郑州大学 | 用于太阳电池的新型等离子激元增强上转换器及其制备 |
CN105018091A (zh) * | 2015-07-08 | 2015-11-04 | 福州大学 | 一种金属离子掺杂的氟化镧钾荧光材料及其制备方法 |
-
2015
- 2015-11-27 CN CN201510838910.1A patent/CN105280743B/zh not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102610685A (zh) * | 2011-03-30 | 2012-07-25 | 郑州大学 | 用于太阳电池的新型等离子激元增强上转换器及其制备 |
CN105018091A (zh) * | 2015-07-08 | 2015-11-04 | 福州大学 | 一种金属离子掺杂的氟化镧钾荧光材料及其制备方法 |
Non-Patent Citations (1)
Title |
---|
MARJAN SABOKTAKIN ET AL: "Metal-Enhanced Upconversion Luminescence Tunable through Metal Nanoparticle Nanophosphor Separation", 《ACS NANO》 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109929203A (zh) * | 2019-02-27 | 2019-06-25 | 南京航空航天大学 | 一种波长转换发光薄膜的制备方法 |
CN109929203B (zh) * | 2019-02-27 | 2022-08-12 | 南京航空航天大学 | 一种波长转换发光薄膜的制备方法 |
CN110635047A (zh) * | 2019-09-23 | 2019-12-31 | 吉林大学 | 一种光电探测器及其制备方法 |
CN111175895A (zh) * | 2019-12-28 | 2020-05-19 | 中国船舶重工集团公司第七一七研究所 | 一种稀土荧光增强天线及其制备方法 |
CN112300800A (zh) * | 2020-11-05 | 2021-02-02 | 福州大学 | 一种可控增强上转换红光发射的复合薄膜材料及其制备方法 |
CN112723749A (zh) * | 2021-03-03 | 2021-04-30 | 哈尔滨工程大学 | 一种含有闪烁纳米晶体的高透明微晶玻璃及制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN105280743B (zh) | 2017-05-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Guo et al. | Achievable high V oc of carbon based all-inorganic CsPbIBr 2 perovskite solar cells through interface engineering | |
CN105280743A (zh) | 一种能提高发光强度的上转换发光结构及其制备方法 | |
Xu et al. | YVO 4: Eu 3+, Bi 3+ UV to visible conversion nano-films used for organic photovoltaic solar cells | |
CN104617165A (zh) | 一种二硫化钼/缓冲层/硅n-i-p太阳能电池器件及其制备方法 | |
CN102154622A (zh) | 用作太阳能电池光吸收层的铜铟镓硒薄膜的制备方法 | |
CN105295912A (zh) | 一种高效绿色上转换发光复合薄膜及其制备方法 | |
CN109244249A (zh) | 对空穴传输层进行修饰的钙钛矿太阳能电池器件及其制备方法 | |
CN104036963A (zh) | 全固态有机-无机杂化钙钛矿太阳电池的制备方法 | |
CN105895806A (zh) | 基于铜锌锡硫钙钛矿平面异质结太阳能电池及其制备方法 | |
CN112490363A (zh) | 一种基于磁控溅射氧化锌/二氧化锡双电子传输层的钙钛矿太阳能电池制备方法 | |
CN103985783B (zh) | 利用磁控溅射法在柔性衬底上制备铜锌锡硫薄膜的方法 | |
CN112194372B (zh) | 一种玻璃-陶瓷复合薄膜固态石榴石电解质及制备方法 | |
CN105158791A (zh) | 基于ZnO薄膜的集成式中子探测器及其制备方法 | |
CN100415064C (zh) | 一种可降低量子点激发电压的复合薄膜制备方法 | |
CN101705473B (zh) | 一种用于硅薄膜电池陷光结构研究的物理气相沉积设备 | |
CN103117361A (zh) | 基于氧化镍阳极界面层的有机半导体薄膜太阳能电池的制备方法 | |
CN103820115A (zh) | 铬锰共掺杂氧化钇发光薄膜、其制备方法和电致发光器件 | |
CN106449810B (zh) | 一种CdTe/CIGS梯度吸收层薄膜太阳能电池及其制备方法 | |
CN114326241B (zh) | 一种无机电致变色用离子传输层及组件复合膜系制备方法 | |
CN102952540B (zh) | 掺钐硫酸锶发光薄膜、其制备方法及有机电致发光器件 | |
KR20110111230A (ko) | 투명전극 소재 및 그 제조방법과 투명전극의 제조방법 | |
CN112300800A (zh) | 一种可控增强上转换红光发射的复合薄膜材料及其制备方法 | |
CN105405923A (zh) | 同时具有减反与下转换转光的Y2O3:Bi,Yb薄膜制备方法 | |
CN103571475A (zh) | 钛锰共掺杂三族钼酸盐发光材料、制备方法及其应用 | |
CN103267379B (zh) | 一种全氮化物耐候性光热涂层及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170510 Termination date: 20191127 |
|
CF01 | Termination of patent right due to non-payment of annual fee |