CN105280518B - Heat treatment device for semiconductor substrate - Google Patents
Heat treatment device for semiconductor substrate Download PDFInfo
- Publication number
- CN105280518B CN105280518B CN201410238135.1A CN201410238135A CN105280518B CN 105280518 B CN105280518 B CN 105280518B CN 201410238135 A CN201410238135 A CN 201410238135A CN 105280518 B CN105280518 B CN 105280518B
- Authority
- CN
- China
- Prior art keywords
- wafer
- heat source
- exhaust
- thermal processing
- processing device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The concept of intelligent city and intelligent life is in depth, and the technological requirements of people on semiconductor products are higher and higher. Attention has been paid to a substrate heat treatment apparatus which is an important part of a semiconductor processing process, and it has been a problem that practitioners have been diligent about how to ensure uniform heating of wafers during a heating process. The invention provides a heat treatment device of a semiconductor substrate, which comprises an exhaust device and a heating cavity, wherein nitrogen is filled in the heating cavity in the heating process, and heat is indirectly transferred to the surface of a wafer through the nitrogen, so that the problem of uneven heating caused by warping of the wafer is solved.
Description
Technical Field
The present invention relates to the field of semiconductor device processing, and more particularly, to a heat treatment apparatus for a semiconductor substrate.
Background
The concept of intelligent city and intelligent life is continuously and deeply enjoyed, and people are increasingly keen on the appeal of precise electronic instruments and integrated circuits. The strong market demand promotes the prosperity of the semiconductor processing and manufacturing industry, and greatly enriches and refines the processing technology of the semiconductor device. Among the various processing techniques, an apparatus for heating a wafer has been attracting attention.
The conventional design of a wafer heat treatment apparatus is: and a heater is arranged in the closed cavity, and the wafer is placed on the closed cavity for heat treatment, so that the heating process can be completed. The heat treatment of the wafer by the device is simple and direct, but has defects, and neglects a plurality of important factors which can seriously affect the quality of the wafer.
For example, as will be appreciated by those skilled in the art, the wafer structure is very precise and sensitive to environmental parameters such as temperature during the heating process, any slight deviation may affect the change of the internal structure of the wafer, which may ultimately affect the quality of the produced product, and if so, the wafer may be directly scrapped and may not be put into use. Therefore, during the heat treatment process, ensuring the uniform heating of the wafer is very beneficial to the protection of the wafer structure. However, even if the wafer looks perfectly flat to the naked eye, there is inevitably some degree of distortion and warpage, either as a protrusion of a portion of the wafer surface, a recess of a portion, or both. In either case, the wafer is heated unevenly during the heating process. The effect of this thermal non-uniformity is more severe when ultra-thin wafers are thermally processed!
Additionally, the thermal processing of the wafer is often only an intermediate step in many processes, before which the wafer may have undergone one or more of polishing, developing, or etching. None of the above processes involves various organic solvents or vapors, and if the removal is not clean, the residual liquid medicine and gas will volatilize and separate out during the heating process, which is easy to form gas turbulence to destroy the uniformity of the chamber gas flow, thereby adversely affecting the heating uniformity of the wafer.
Disclosure of Invention
Therefore, the present invention is directed to an apparatus for solving the problem of uniformity of heat applied to a wafer during a thermal process.
In order to achieve the purpose, the invention provides the following technical scheme:
the heat treatment device for the semiconductor substrate comprises an exhaust device and a heating chamber, wherein the exhaust device is at least provided with an exhaust interface which is connected with an external exhaust system, and the exhaust device is at least provided with an exhaust hole which is communicated with the heating chamber;
the heating chamber includes:
a door, the opening or closing of which is controllable;
a heat source;
a temperature sensor;
the heat insulation base is used for bearing and fixing a heat source, a gas circulation space is reserved above the heat insulation base, and a gas circulation space is reserved below the heat insulation base;
the supporting rod penetrates through the heat insulation base and the heat source, is used for supporting a wafer, and keeps the wafer horizontal;
the lifting tray is connected with the bottom end of the supporting rod, and the lifting and descending of the lifting tray are adjusted by a driving device;
the central air inlet is positioned in the central positions of the heat insulation base and the heat source and penetrates through the heat insulation base and the heat source, and the central air inlet is connected with an external air supply system;
an air inlet through hole;
the heat insulation base is provided with a heat source, the heat source is arranged in the heat insulation base, the heat source is.
Further, exhaust device is located the top of heating chamber, exhaust device includes the exhaust cavity, the exhaust hole is located exhaust cavity's lower surface just.
Preferably, the door is located on a side wall of the heating chamber, and the opening or closing of the door is controlled by a cylinder.
Further, the door is opened when the wafer is taken in or out, and the door is kept closed during the heating process.
Preferably, the heat source is an electric heating plate, the heat source is made of metal or ceramic, and at least three anti-skid pins are arranged on the upper surface of the electric heating plate.
Preferably, at least one temperature sensor is integrated inside the heat source, the temperature sensor is used for monitoring the temperature of the heat source, and the temperature sensor is a thermocouple.
Preferably, the heat source is placed inside the heat-insulating base with a gap between a side circumference of the heat source and the heat-insulating base.
Preferably, the material of the heat insulation base is ceramic or asbestos.
Furthermore, the support rod comprises an anti-skid nail and a support rod, the anti-skid nail is located at the upper end of the support rod, and the bottom end of the support rod is fixedly connected to the lifting tray through a bolt.
Preferably, the driving device is a servo motor, and the servo motor controls the height of the wafer from the heat source by controlling the ascending and descending of the lifting tray.
Furthermore, nitrogen is introduced into the central air inlet in the heating process, and the temperature and the flow of the nitrogen in the central air inlet are regulated by the air supply system.
Furthermore, the exhaust cavity comprises a handle, a fixing bolt and two slide rails, wherein the two slide rails are parallel to each other and are respectively positioned on two edges below the exhaust cavity.
In summary, in the heat treatment process, the hot nitrogen in the central gas inlet is a medium for heat transfer, and due to the fluidity of the gas, the problem of non-uniform heating of the wafer caused by warping can be well solved. Meanwhile, the air inlet channel which is arranged on the heat insulation base and is formed around the heat source is used as the only air inlet of the heating cavity, so that the turbulent flow influence can be eliminated, and the volatilized and separated gas is discharged through the exhaust device.
Drawings
FIG. 1 is a schematic view of an embodiment of the heat treatment apparatus of the present invention as a whole;
FIG. 2 is a cross-sectional view of an embodiment of the thermal processing apparatus of the present invention;
FIG. 3 is a further cross-sectional view of an embodiment of the thermal processing apparatus of the present invention;
FIG. 4 is a top perspective view of an embodiment of the thermal processing apparatus of the present invention;
FIG. 5 is a schematic view of the support rod of the present invention;
FIG. 6 is a schematic view showing a temperature distribution of a wafer surface when hot nitrogen gas is not introduced during a heat treatment according to the present invention;
FIG. 7 is a schematic diagram of the wafer surface temperature distribution when hot nitrogen is introduced during the thermal treatment process according to the present invention.
Detailed Description
In order to explain the spirit of the invention in detail and to assist those skilled in the art to understand the full technical solution of the invention practically and completely, the following description is given with reference to the embodiments and accompanying drawings:
figures 1-4 illustrate various structural features of particular embodiments of the thermal management device of the present invention.
Fig. 1-3 show the wafer heat treatment apparatus of the present invention globally. The thermal processing apparatus includes an exhaust and a heating chamber 102. The exhaust device comprises an exhaust cavity 101 in a cuboid shape, is supported by two mutually parallel slide rails 103, and is placed above the heating cavity 102. The two slide rails 103 are respectively located on two edges below the rectangular exhaust cavity 101, and the exhaust cavity 101 can slide along the slide rails 103. Furthermore, a circular exhaust hole 104 is formed below the exhaust cavity 101, the exhaust hole 104 is communicated with the inside of the heating cavity 102, and the gas in the heating cavity 102 is allowed to enter the exhaust cavity 101 through the exhaust hole 104 and is finally exhausted through an exhaust interface 105 formed on the exhaust cavity. The exhaust interface 105 is connected to an external exhaust system. The exhaust system can generate negative pressure in the exhaust cavity 101, and helps the gas in the cavity to enter the external exhaust system and be completely exhausted. The exhaust cavity 101 is further provided with a handle 106 and two fixing bolts 201 on one side surface along the direction of the slide rail 103, the handle 106 is used for pulling out or pushing in the exhaust cavity 101, and the fixing bolts 201 are used for fixing the position of the exhaust cavity 101. The air-tightness of the device can be ensured after the air exhaust cavity 101 is pushed in during the heating process, and when the device needs to be cleaned, the design supported by the sliding rails 103 is very beneficial to the cleaning and maintenance of the equipment.
The heating chamber 102 is a closed chamber, and has a long door 107 formed on one side wall thereof, wherein the door 107 is controlled by a cylinder to open when the wafer 108 is transferred into or out of the chamber and to be kept closed when the process is performed, thereby ensuring that the heating chamber 102 is isolated from the outside. The door 107 can move vertically up and down during opening and closing. Alternatively, the side walls of the heating chamber 102 and the door 107 may be made of a high temperature resistant sealing material, preferably a double layer of stainless steel material, between which asbestos may be sandwiched.
Also integrated in the heating chamber 102 is a heat source, more specifically an electric heating plate 109 of circular shape, and an insulating base 110. The electric heating plate 109 may be a thin flat plate made of metallic aluminum, and the temperature distribution of the surface of the electric heating plate 109 is very uniform during heating. The size of the electric heating plate 109 may be determined as appropriate, and since the wafers commonly used in the market are 8-inch wafers and 12-inch wafers, the electric heating plate 109 is a circular flat plate with a diameter of 350mm, which also makes the heat treatment apparatus compatible with 8-inch/12-inch wafer substrates for heat treatment of single wafer substrates with different sizes. Of course, the electrical heating plate 109 can also be made larger to accommodate other sizes.
Further, the electric heating plate 109 may be placed inside the heat insulating base 110, and the center of the heat insulating base 110 is aligned with the center of the electric heating plate 109. The electric heating plate 109 is completely placed inside the heat insulating base 110, but the heat insulating base 110 is not completely filled, and the side periphery thereof is not in close contact with the heat insulating base 110, but a certain isolation gap 202 is provided, and the isolation gap 202 is provided to avoid the influence of the temperature characteristic of the side surface of the electric heating plate 109, and to eliminate the influence of the heat expansion of the electric heating plate 109 on the heat insulating base 110. The heating chamber 102 may also incorporate a temperature sensor to monitor the temperature of the chamber, particularly the electrical heating plate 109, for regulation. The temperature sensor is preferably a thermocouple 203, and in order to enable more accurate measurements, the thermocouple 203 is typically disposed directly inside the electrical heating plate 109, and is generally not visible.
The thermally insulating base 110 is made of a material resistant to high temperatures, preferably ceramic. A ring-shaped air inlet channel 111 is formed on the heat insulating base 110, and the air inlet channel 111 is distributed on the periphery of the electric heating plate 109 and surrounds and encloses the electric heating plate 109. The air intake passage 111 communicates between the upper space 204 and the lower space 205 of the heat insulating base 110. The upper space 204 allows gas to flow through, and the lower space 205 allows gas to flow through. The air intake passage 111 is the only air inlet to the heating chamber 102. In the heating process, air infused in through the air inlet through hole 207 flows into the air inlet channel 111 to circulate in the heating cavity 102 and is exhausted from the exhaust cavity 101 through the exhaust hole 104, the airflow in the whole cavity flows uniformly and orderly, the turbulent flow influence generated by other volatilized and separated gases such as organic solvents is avoided, and the heating uniformity of the wafer 108 is ensured. The gas inlet channels 111 are preferably arranged in a circular shape corresponding to the shape of the wafer 108, so that the gas flow can be ensured to be uniformly introduced from the periphery of the wafer 108, and the whole gas flow path basically flows from the gas inlet channels 111 to the gas outlet holes 104 with lower pressure intensity, and interference turbulence is not generated.
Alternatively, the wafer 108 may be placed horizontally on the support rods 112 after entering the heating chamber 102. Due to the principle that three points define a plane, the number of the support rods 112 is preferably three, and the heights of the three support rods 112 are flush, so as to ensure that the wafer 108 is horizontally placed and uniformly heated all the time in the heating process. The support rods 112 penetrate the electric heating plate 109 and the heat insulating base 110. The bottom end of the support rod 112 is fixed to a lifting tray 113 by a bolt 208. The lifting tray 113 can be lifted or lowered in the vertical direction to correspondingly drive the supporting rod 112 to lift or lower, so as to control the height of the wafer 108 from the electric heating plate 109 in the heating process, thereby adjusting the heating degree of the wafer 108 and carrying out heat treatment on the wafer 108 as required. Fig. 2 is a schematic view of heating when the wafer 108 is located higher from the electric heating plate 109, and fig. 3 is a schematic view of heating when the wafer 109 is located lower from the electric heating plate 109. The elevation of the elevating tray 113 is controlled by a driving means, and more specifically, may be a servo motor 209 located at a corner of the heating chamber 109. Other control devices and systems may be integrated with the servo motor 209 to control and adjust the thermal treatment device according to a set program.
At the center of the electrically heated plate 109 and the thermally insulated susceptor 110, there may be a center gas inlet 210 responsible for supplying hot inert gas from below the wafer 108 during heating. The inert gas is preferably nitrogen. The center air inlet 210 penetrates the electric heating plate 109 and the heat insulating base 110, and the center air inlet 210 is connected to an external air supply system. During the heating process, the central inlet 210 is filled with hot nitrogen gas, so that the hot nitrogen gas flows uniformly and stably under the wafer 108, receives the heating of the electric heating plate 109, and transfers the heat to the wafer 108, thereby eliminating the problem of uneven heating caused by the warping of the wafer 108. The wafer 108 and the electric heating plate 109 are filled with a small amount of hot nitrogen, so that the height difference of the warped wafer is eliminated, and the temperature of the introduced hot nitrogen is adjusted to be consistent with the temperature of the electric heating plate 109 by an external gas supply system under the normal condition, so that the temperature difference of the wafer 108 at each position in the heating process can be almost ignored, and the wafer is uniformly heated. The device is not only suitable for wafers with standard thickness, but also has more obvious advantages when processing ultrathin wafers because the warping phenomenon of the ultrathin wafers is generally more serious. Whether hot nitrogen is filled in the central air inlet 210 or not, and the temperature and the flow rate of the hot nitrogen can be adjusted and controlled by a control system of an external air supply pipeline, and if the hot nitrogen in the central air inlet 210 does not meet the requirements, the system can also give an alarm to remind an operator. To improve efficiency, the temperature of the hot nitrogen gas in the central inlet port 210 is generally set to a temperature consistent with that of the electric heating plate 109.
The thermal processing apparatus also has a compressed air interface 211 and a nitrogen interface 212 to provide the gases required for the thermal processing process.
FIG. 4 is a top perspective view of the heat treatment apparatus of the present invention. The two dotted circular lines show the corresponding positions of the 8-inch wafer 402 and the 12-inch wafer 403 in the heating chamber 102 when the thermal processing apparatus is heating the 8-inch wafer 402 and the 12-inch wafer 403, respectively. Additionally, it is also shown that a plurality of anti-slip pins 401 are distributed on the upper surface of the electric heating plate 109. Preferably, the number of the anti-slip pins 401 is three, and the angles formed by the two adjacent anti-slip pins 401 and the center of the electric heating plate 109 are all 120 °. Meanwhile, the anti-slip pins 401 may be located on the same circle centering on the center of the electric heating plate 109. The anti-slip pins 401 are designed to prevent the wafer 108 from drifting when it is lowered to a position close to the electrical heating plate 109, and the unique distribution helps to keep the wafer 108 stable and not displaced when it contacts the anti-slip pins 401.
Looking down the heat treatment apparatus, it can be seen that the arrangement of the support rods 112 is also regular, and in the three support rods 112, the angles formed by two adjacent support rods 112 and the center of the electric heating plate 109 are all 120 °, and the support rods 112 may be located on the same circle with the center of the electric heating plate 109 as the center of the circle, so as to stably support the wafer 108 and keep the wafer 108 in a horizontal state all the time.
Fig. 5 discloses a specific structure of the support rod of the present invention, and further shows the structure of the support rod 112.
The support rods 112 used in the heat treatment apparatus include cleats 501 and stays 502. The said stud 501 is located at the top of the support rod 112, the stud 501 can be connected with the support rod 502 located below as a whole in a way of screw locking, can be very convenient to dismantle and change. Of course, the studs 501 are not connected to the struts 502 in a threaded manner. The anti-slip nails 501 have an anti-slip function, and can prevent the wafer 108 from sliding and deviating in the horizontal direction when the wafer 108 is placed on the support rod 112 and moves up and down along with the rod.
Fig. 6 and 7 are graphs comparing the temperature gradient of the surface of the wafer 108 with and without hot nitrogen gas introduced into the central gas inlet 210, according to an embodiment of the thermal processing apparatus of the present invention.
Wafers, particularly ultra-thin wafers, generally have a certain degree of distortion warpage, as shown in the left schematic diagrams of fig. 6 and 7, which reflect three different forms of warpage, namely: convex wafer surfaces, concave wafer surfaces, and both convex and concave wafer surfaces. In any form of warping, if the wafer is directly heated by a heat source (e.g., an electric heating plate), since the distances (h) between each point on the wafer and the electric heating plate are different, and the distribution of the space temperature of the electric heating plate upward has a temperature gradient, the heated temperatures t (h) of different points on the wafer surface are actually related to the height h of the point from the electric heating plate, as shown in the diagram on the right side of fig. 6, so that the deformation warping affects the uniformity of the overall heating of the wafer, and causes defects in the heat treatment process of the wafer. Fig. 6 shows a case where the wafer is heated by the embodiment of the heat treatment apparatus according to the present invention, and nitrogen gas is not introduced.
Fig. 7 is the reverse, and after the wafer is heated by the above device, and after micro-heating nitrogen is introduced between the lower surface of the wafer and the electric heating plate through the central air inlet 210, because the temperature of the introduced nitrogen is generally the same as that of the electric heating plate and the gas has fluidity, the temperature of each point in a certain space above the electric heating plate can be ensured to be the same no matter what type of warping state, as shown in the schematic diagram on the right side of fig. 7, no temperature gradient exists, so that the uniformity of heating is ensured, and the problem of uneven heating during the heat treatment of the wafer is overcome.
The process of heat-treating the wafer can be summarized as follows: before the wafer 108 heating process starts, 3 support rods 112 on the surface of the electric heating plate 109 are raised to preset designated positions under the control of the servo motor 209, a door 107 on the side surface of the heating chamber 102 is opened, the full-automatic manipulator conveys the wafer 108 to be processed to the support rods 112 above the electric heating plate 109, the manipulator exits from the heating chamber 102 after the conveying is finished, and a chamber body door 107 is closed to form a closed process environment; the thermal process of the wafer 108 is determined by a predetermined heating procedure. The heating process may be configured such that a plurality of steps are sequentially performed, and a plurality of heating steps may be set in the heating program. Each step may set the time of the heat treatment of the step, the temperature of the heating plate, the temperature of the hot nitrogen gas, whether the hot nitrogen gas is used, and the height of the wafer 108; after the wafer 108 is heated according to the heating program, the 3 support rods 112 on the surface of the electric heating plate 109 are raised to the preset designated positions under the control of the servo motor 209, the door 107 on the side surface of the process chamber is opened, the full-automatic robot takes out the wafer 108 from the chamber after the heat treatment is finished, and the chamber door 107 is closed.
Furthermore, the thermal processing apparatus may be used as a heating unit of a semiconductor processing machine, such as a developing machine, and integrated with other chambers or units to form a finished device.
While the invention has been described in detail and with reference to specific embodiments thereof, it will be appreciated by those skilled in the art that variations and modifications may be made without departing from the spirit of the invention as described herein.
Claims (13)
1. The heat treatment device for the semiconductor substrate is characterized by comprising an exhaust device and a heating chamber, wherein the exhaust device is at least provided with an exhaust interface which is connected with an external exhaust system and at least provided with an exhaust hole which is communicated with the heating chamber;
the heating chamber includes:
a door, the opening or closing of which is controllable;
a heat source;
a temperature sensor;
the heat insulation base is used for bearing and fixing a heat source, a gas circulation space is reserved above the heat insulation base, and a gas circulation space is reserved below the heat insulation base;
the supporting rod penetrates through the heat insulation base and the heat source, is used for supporting a wafer, and keeps the wafer horizontal;
the lifting tray is connected with the bottom end of the supporting rod, and the lifting and descending of the lifting tray are adjusted by a driving device;
the central gas inlet is positioned in the central positions of the heat insulation base and the heat source and penetrates through the heat insulation base and the heat source, the central gas inlet is connected with an external gas supply system, hot inert gas or nitrogen is supplied from the lower part of the wafer in the heating process, and the inert gas or the nitrogen enters the heating chamber through the lower surface of the wafer;
an air inlet through hole;
the heat insulation base is provided with a heat source, the heat source is arranged in the heat insulation base.
2. The thermal processing device of claim 1, wherein said exhaust means is located above said heating chamber, said exhaust means comprising an exhaust cavity, said exhaust hole being located in a lower surface of said exhaust cavity.
3. The thermal processing device of claim 1, wherein said door is located on a side wall of said heating chamber, and opening or closing of said door is controlled by a cylinder.
4. The thermal processing device of claim 3, wherein said door is opened upon entry or removal of a wafer, said door remaining closed during heating.
5. The heat treatment apparatus according to claim 1, wherein the heat source is an electric heating plate, the heat source is made of metal or ceramic, and at least three anti-slip pins are provided on an upper surface of the electric heating plate.
6. The thermal processing device of claim 1, wherein at least one temperature sensor is integrated within said heat source, said temperature sensor being configured to monitor the temperature of said heat source, said temperature sensor being a thermocouple.
7. The thermal processing device of claim 1, wherein said heat source is placed inside said thermally insulated base with a gap between a lateral periphery of said heat source and said thermally insulated base.
8. The thermal processing device of claim 1, wherein the thermally insulating base is made of ceramic or asbestos.
9. The thermal processing device of claim 1, wherein the support rods comprise studs and support rods, the studs are located at the upper ends of the support rods, and the bottom ends of the support rods are fixedly connected to the lifting tray through bolts.
10. The thermal processing apparatus of claim 1, wherein the driving means is a servo motor, and the servo motor controls the height of the wafer from the heat source by controlling the elevation and the descent of the elevating tray.
11. The thermal processing device of claim 5, wherein nitrogen gas is introduced into said central gas inlet during heating, and the temperature and flow rate of nitrogen gas in said central gas inlet are regulated by said gas supply system.
12. The thermal processing device of claim 11, wherein the temperature of said nitrogen gas is identical to the temperature of said electric heating plate.
13. The thermal processing device of claim 2, wherein said exhaust chamber further comprises two handles, two fixing bolts and two sliding rails, and said two sliding rails are parallel to each other and are respectively located on two edges below said exhaust chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410238135.1A CN105280518B (en) | 2014-05-30 | 2014-05-30 | Heat treatment device for semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410238135.1A CN105280518B (en) | 2014-05-30 | 2014-05-30 | Heat treatment device for semiconductor substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105280518A CN105280518A (en) | 2016-01-27 |
| CN105280518B true CN105280518B (en) | 2020-09-08 |
Family
ID=55149320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410238135.1A Active CN105280518B (en) | 2014-05-30 | 2014-05-30 | Heat treatment device for semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105280518B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017156758A1 (en) * | 2016-03-18 | 2017-09-21 | Acm Research (Shanghai) Inc. | Substrate heat treatment apparatus |
| CN107504811B (en) * | 2017-08-25 | 2019-11-22 | 天津中环电炉股份有限公司 | A kind of vacuum box type atmosphere furnace |
| CN107741658A (en) * | 2017-10-25 | 2018-02-27 | 武汉华星光电技术有限公司 | A kind of panel apparatus for baking |
| CN107583839B (en) * | 2017-10-25 | 2020-12-29 | 武汉华星光电技术有限公司 | Panel baking device |
| CN110466243B (en) * | 2018-05-11 | 2022-08-23 | 重庆莱宝科技有限公司 | Automatic silk-screen printing method |
| US10900843B2 (en) * | 2018-06-05 | 2021-01-26 | Kla Corporation | In-situ temperature sensing substrate, system, and method |
| CN109439850A (en) * | 2018-12-25 | 2019-03-08 | 内蒙古科技大学 | A kind of material magnetic heat treatment system |
| CN110488166A (en) * | 2019-08-30 | 2019-11-22 | 哈尔滨理工大学 | A kind of thermally stimulated current device measuring different-thickness solid insulation |
| CN115566531B (en) * | 2022-09-08 | 2023-08-15 | 北京融为科技有限公司 | Laser transceiver with high-reliability temperature control structure and optical telescope |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES2054357T3 (en) * | 1989-05-08 | 1994-08-01 | Philips Nv | DEVICE AND METHOD FOR TREATING FLAT SUBSTRATES UNDER REDUCED PRESSURE. |
| JPH1055951A (en) * | 1996-08-12 | 1998-02-24 | Sony Corp | Baking device and method |
| JP3555743B2 (en) * | 1998-09-21 | 2004-08-18 | 大日本スクリーン製造株式会社 | Substrate heat treatment equipment |
| JP3527868B2 (en) * | 1999-11-19 | 2004-05-17 | タツモ株式会社 | Heat treatment apparatus and heat treatment method for semiconductor substrate |
| JP2003258073A (en) * | 2002-02-28 | 2003-09-12 | Hitachi High-Technologies Corp | Plasma treatment apparatus and sample stage therefor |
| JP3811103B2 (en) * | 2002-06-17 | 2006-08-16 | 東京エレクトロン株式会社 | Thermal processing apparatus and thermal processing method |
| JP2004158751A (en) * | 2002-11-08 | 2004-06-03 | Matsushita Electric Ind Co Ltd | Plasma processing apparatus |
| CN201311921Y (en) * | 2008-09-08 | 2009-09-16 | 力鼎精密股份有限公司 | Wafer carrying device |
| JP6285620B2 (en) * | 2011-08-26 | 2018-02-28 | 新光電気工業株式会社 | Electrostatic chuck and semiconductor / liquid crystal manufacturing equipment |
| CN103094157B (en) * | 2011-10-31 | 2015-07-15 | 细美事有限公司 | Substrate treating apparatus and substrate treating method |
| US9214373B2 (en) * | 2012-08-08 | 2015-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Chuck exhaust openings |
-
2014
- 2014-05-30 CN CN201410238135.1A patent/CN105280518B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN105280518A (en) | 2016-01-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105280518B (en) | Heat treatment device for semiconductor substrate | |
| US7624772B2 (en) | Load lock apparatus, processing system and substrate processing method | |
| US20110183279A1 (en) | Substrate heating apparatus, substrate heating method and substrate processing system | |
| TWI639482B (en) | Apparatus for supporting substrate and apparatus for processing substrate including the same | |
| TWI473191B (en) | Substrate processing apparatus, method of manufacturing a semiconductor device and substrate processing method | |
| KR101432157B1 (en) | Substrate support and apparatus for treating substrate having thereof substrate support | |
| KR20090036722A (en) | Substrate supporting plate and apparatus for depositing thin film having the same | |
| TWI631613B (en) | Substrate processing method and substrate processing device | |
| TW201408813A (en) | Apparatus for processing substrate | |
| KR20110112074A (en) | Apparatus and method for treating substates | |
| KR100567493B1 (en) | Apparatus for forming coating film and apparatus for curing the coating film | |
| KR20140065851A (en) | Apparatus for drying the substrate | |
| KR20190042861A (en) | Method and Apparatus for treating substrate | |
| WO2014157835A1 (en) | Apparatus for processing substrate | |
| TWI805603B (en) | Inner wall and substrate processing equipment | |
| CN115722425B (en) | Heating treatment device | |
| CN104412363A (en) | Substrate processing apparatus | |
| KR101411385B1 (en) | Substrate supporting plate and apparatus for depositing thin film having the same | |
| TW201319298A (en) | Vacuum coating apparatus | |
| KR20170106760A (en) | Susceptor included in substrate disposition apparatus | |
| KR20200102725A (en) | Apparatus for loading substrate and apparatus for processing substrate | |
| JP6823575B2 (en) | Manufacturing method for substrate processing equipment, reaction tubes and semiconductor equipment | |
| KR200458852Y1 (en) | Substrate Treatment Apparatus | |
| TWI731913B (en) | Substrate heat treatment device | |
| KR100684901B1 (en) | Semiconductor manufacturing equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 201203 building 4, No. 1690, Cailun Road, free trade zone, Pudong New Area, Shanghai Applicant after: Shengmei semiconductor equipment (Shanghai) Co., Ltd Address before: 201203 Shanghai Zhangjiang High Tech Park of Pudong New Area Cailun Road No. fourth 1690 Applicant before: ACM (SHANGHAI) Inc. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |