CN105226155B - Direct epitaxy growth LED method and application on laminated circuit board - Google Patents
Direct epitaxy growth LED method and application on laminated circuit board Download PDFInfo
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- CN105226155B CN105226155B CN201410239611.1A CN201410239611A CN105226155B CN 105226155 B CN105226155 B CN 105226155B CN 201410239611 A CN201410239611 A CN 201410239611A CN 105226155 B CN105226155 B CN 105226155B
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Abstract
The present invention relates to the method for epitaxy growth LED direct on laminated circuit board a kind of and application, methods described to include：The upper surface of laminated circuit board is ground and cleaned and carries out ion implanting, makes the conductive energy of lattice adaptation layer；ICP etchings are carried out to the upper surface of laminated circuit board, are roughened the upper surface of laminated circuit board, to increase the fastening power of lattice growth；MOCVD grows N-type GaN layer and is patterned etching；The N-type GaN layer retained after etching is located on the first lattice adaptation layer；ICP etchings are carried out to the upper surface of laminated circuit board, are roughened the upper surface of laminated circuit board；MOCVD growth P-type GaNs layer is simultaneously patterned etching；The p-type GaN retained after etching is located on N-type GaN layer and the second lattice adaptation layer；MESA photoetching and etching, isolation channel is formed in p-type GaN layer, so that the N-type GaN layer and p-type GaN layer form multiple independent PN junction structures.
Description
Technical field
The present invention relates to semiconductor applications, more particularly to a kind of epitaxy growth LED direct on laminated circuit board method
And application.
Background technology
The application field of semiconductor light-emitting-diode (LED, Light Emitting Diode) has jumbo in this year
Extension, wherein, growth at the soonest most potential market be LCDs (LCD) backlight application.
In general LED video display boards manufacturing process, due to being limited by the rear process of general electronics processing, for example need
LED wafer is first implemented to encapsulate, then carry out again dual inline type (dual inline-pinpackage, DIP) encapsulation or
Surface mounting technology (Surface Mount Technology, SMT) assembling etc., limits the development of the extra small chips of LED
(the extra small chips of LED：Refer to nanoscale chip of the size at 300 μm~0.1 μm).And this is exactly LED in VHD field
The advantages such as its super bright, long-life, stable performance are played to cover the bottleneck of high-resolution field of video displaying.
The content of the invention
, can it is an object of the invention to provide the method for epitaxy growth LED direct on laminated circuit board a kind of and application
On the LED laminated circuit boards with lattice adaptation layer directly carry out LED epitaxial growth growth, compared to traditional laminated circuit board with
LED is separately prepared carries out integrated technique again, simplifies processing step, and multiple LED of synchronous growth have better performance list
One property, and the control of size spacing is more accurate.
In a first aspect, direct epitaxy grows light emitting diode on laminated circuit board the embodiments of the invention provide one kind
There is the lattice deposited on the metal pad electrode of laminated circuit board to fit for LED method, the upper surface of the laminated circuit board
With layer, methods described includes：
The upper surface of the laminated circuit board is ground and cleaned；
Ion implanting is carried out to the upper surface of the laminated circuit board, so that the conductive energy of lattice adaptation layer；
The upper surface of the laminated circuit board is ground, damaging layer caused by remove ion implanting；
Inductively coupled plasma ICP etchings are carried out to the upper surface of the laminated circuit board, are roughened the integrated circuit
The upper surface of plate, to form the spherical island of projection, increase the fastening power of lattice growth；
Metal organic chemical vapor deposition MOCVD grows N-type GaN layer and is patterned etching；The graphical etching
The N-type GaN layer retained afterwards is located on the first lattice adaptation layer；
ICP is carried out to the upper surface of the laminated circuit board, is roughened the upper surface of the laminated circuit board, it is convex to be formed
The spherical island risen, increase the fastening power of lattice growth；
MOCVD growth P-type GaN layers；
Table top MESA photoetching and etching, isolation channel is formed in the p-type GaN layer, so that the N-type GaN layer and p-type
GaN layer forms multiple independent PN junction structures；Wherein, the p-type GaN retained after the etching is located at N-type GaN layer and the second lattice is fitted
On layer；
Wherein, the laminated circuit board is inorganic laminated circuit board.
Preferably, methods described also includes：
Graphical deposit SiO2, to fill the isolation channel.
It is further preferred that methods described also includes：
The lower surface of the laminated circuit board is ground and cleaned；
SiO is carried out to the lower surface of the laminated circuit board2Etching, expose for being electrically connected with external chip or circuit
The contact electrode connect.
Second aspect, the embodiments of the invention provide it is a kind of using described in above-mentioned first aspect on laminated circuit board it is straight
Connect LED epitaxial growth circuit board prepared by the method for epitaxy growth LED.
The third aspect, the embodiments of the invention provide a kind of LED epitaxial growth circuit board including described in above-mentioned second aspect
LED display modules.
Preferably, the LED display modules also include：Chip support, interface arrangement, dedicated IC chip, radiating
Layer and heat-dissipating cover plate；
It is exiting surface at the top of the LED epitaxial growth circuit board, top is set up in the chip support, the special collection
The bottom surface of the package substrate is arranged at into circuit chip upside-down mounting, is fixed on by the heat dissipating layer and the heat-dissipating cover plate described
In chip support；The interface arrangement is arranged at the chip support between the bottom surface of the package substrate and the heat-dissipating cover plate
It is interior, and the outward opening by having on the heat-dissipating cover plate exposes；
The LED epitaxial growth circuit board electrically connects with the dedicated IC chip；The package substrate is connect by described
Mouth device is electrically connected with external circuit.
It is further preferred that the LED display unit module also includes：
Ceramic glaze layer, it is arranged on the top exiting surface of the LED epitaxial growth circuit board, for strengthening LED epitaxial growth circuit board
Upper LED heat dispersion.
It is further preferred that the LED display unit module also includes：
Diaphragm, there is optical grating structure, be covered on the ceramic glaze layer.
It is further preferred that the LED display unit module also includes：
Fixture, the heat-dissipating cover plate are anchored on the chip support by the fixture.
It is further preferred that the interface arrangement is the USB interface that compatible power supply and data communicate, by it is cementing with it is described
Package substrate connects.
Epitaxy growth LED direct on laminated circuit board provided in an embodiment of the present invention method and application, by using
MOCVD method directly carries out LED epitaxial growth growth on the LED laminated circuit boards with lattice adaptation layer, compared to traditional product
Layer circuit board opens preparation with LED points and carries out integrated technique again, simplifies processing step, and multiple LED of synchronous growth have more
Good unicity, and the control of size spacing is more accurate.
Brief description of the drawings
Fig. 1 is the method that epitaxy direct on laminated circuit board provided in an embodiment of the present invention grows LED；
Fig. 2 is that epitaxy direct on laminated circuit board provided in an embodiment of the present invention grows one of LED step schematic diagram；
Fig. 3 is the two of the step schematic diagram that epitaxy direct on laminated circuit board provided in an embodiment of the present invention grows LED；
Fig. 4 is the three of the step schematic diagram that epitaxy direct on laminated circuit board provided in an embodiment of the present invention grows LED；
Fig. 5 is the four of the step schematic diagram that epitaxy direct on laminated circuit board provided in an embodiment of the present invention grows LED；
Fig. 6 is the five of the step schematic diagram that epitaxy direct on laminated circuit board provided in an embodiment of the present invention grows LED；
Fig. 7 is the six of the step schematic diagram that epitaxy direct on laminated circuit board provided in an embodiment of the present invention grows LED；
Fig. 8 is the seven of the step schematic diagram that epitaxy direct on laminated circuit board provided in an embodiment of the present invention grows LED；
Fig. 9 is the eight of the step schematic diagram that epitaxy direct on laminated circuit board provided in an embodiment of the present invention grows LED；
Figure 10 is the LED of LED epitaxial growth circuit board provided in an embodiment of the present invention characteristic variations curve map；
Figure 11 is the LED light intensity and the schematic diagram of lighting angle of LED epitaxial growth circuit board provided in an embodiment of the present invention；
Figure 12 is LED display modules provided in an embodiment of the present invention.
Embodiment
The method provided by the invention that LED is grown on LED laminated circuit boards, is mainly used in LED display, extra small spacing
LED display, VHD LED display, the just luminous TVs of LED, the just luminous monitors of LED, LED video walls, LED instructions,
The display panel manufacture in the fields such as LED special lightings.
In order to be better understood from the present invention, the laminated circuit board used in epitaxy of the present invention growth LED is carried out first below
It is simple to introduce.
Laminated circuit board used in epitaxy growth LED of the present invention is using patent of invention：Application number 201410217344.8
The inorganic laminated circuit board that the preparation method provided is prepared.Using inorganic matter SiC as substrate, prepare and lead on substrate
Electric layer and insulating barrier, and lattice adaptation layer is prepared in outermost conductive layer, subsequently directly to be grown on LED laminated circuit boards
LED wafer provides possibility.
Below by drawings and examples, technical scheme is described in further detail.
Fig. 1 is the method that epitaxy direct on laminated circuit board provided in an embodiment of the present invention grows LED
Flow chart, Fig. 2 to Fig. 9 are the step schematic diagram that direct epitaxy grows LED on laminated circuit board, as shown in figure 1, and combination figure
2 to Fig. 9, methods described comprises the following steps：
Step 101, the upper surface of the laminated circuit board is ground and cleaned；
Specifically, the structure of laminated circuit board is as shown in Fig. 2 grinding can use the conventional grinding work of manufacture of semiconductor
Skill, such as chemically mechanical polishing (Chemical Mechanical Polishing, CMP), to laminated circuit board upper surface
SiO2 protective layers are planarized, and carry out surface clean after grinding.
Step 102, ion implanting is carried out to the upper surface of the laminated circuit board, led so that the lattice adaptation layer has
Electrical property；
Specifically, by way of ion implanting, the lattice adaptation layer of laminated circuit board upper surface is doped, adulterated
The conductive energy of lattice adaptation layer afterwards, as shown in Figure 3.In a specific example, lattice adaptation layer is SiC, can be with
It is to adulterate or undope, with good electric conductivity.Doped ions concentration and impurity point after injection
Cloth according to the actual requirements depending on.The SiO2 protective layers of laminated circuit board upper surface play a part of barrier layer in ion implanting.
Therefore, ion implanting is only for lattice adaptation layer.
Step 103, the upper surface of the laminated circuit board is ground, damage caused by remove ion implanting
Layer；
Specifically, ion implanting can cause the lattice structure damage of lattice adaptation layer surface, therefore, need after injection it
The upper surface of laminated circuit board is ground, to remove the damaging layer on surface.
Step 104, inductively coupled plasma ICP etchings are carried out to the upper surface of the laminated circuit board, described in roughening
The upper surface of laminated circuit board, to form the spherical island of projection, increase the fastening power of lattice growth；
Specifically, as shown in figure 4, using ICP etch roughening laminated circuit board upper surface, formed in lattice adaptation layer
The raised spherical island of coronule, in order to the long brilliant fastening power of increase, prepared for follow-up epitaxy.
Step 105, metal organic chemical vapor deposition (Metal-organic Chemical Vapor Deposition,
MOCVD) grow N-type GaN layer and be patterned etching；The N-type GaN layer retained after the graphical etching is located at the first lattice
On adaptation layer；
Specifically, MOCVD is a kind of new vapour phase epitaxy life to grow up on the basis of vapor phase epitaxial growth (VPE)
Long technology, be using III race, the organic compound of II race's element and V, VI race's element hydride etc. as crystal growth source material,
In the enterprising promoting the circulation of qi phase epitaxy of substrate in a manner of pyrolysis, grow various III-V races, group Ⅱ-Ⅵ compound semiconductor and it
Multivariate solid solution thin layer monocrystal material.
In the present invention, as shown in figure 5, using MOCVD techniques, grown in the lattice adaptation layer of laminated circuit board upper surface
N-GaN, the N-GaN grown lattice structure are adapted to completely with the lattice structure of the SiC as its epitaxy substrate.It is also, raw
After the completion of length, etching is patterned to N-GaN, to form LED N-type region domain.
Step 106, ICP etchings are carried out to the upper surface of the laminated circuit board, is roughened the upper table of the laminated circuit board
Face, to form the spherical island of projection, increase the fastening power of lattice growth；
Specifically, carrying out ICP etchings again to laminated circuit board upper surface, it is roughened the upper surface of laminated circuit board, thereon
Surface forms the spherical island of coronule of projection, in order to the long brilliant fastening power of increase, is prepared for follow-up epitaxy.
Step 107, MOCVD growth P-type GaNs layer；
Specifically, as shown in fig. 6, using MOCVD techniques, in the lattice adaptation layer of laminated circuit board upper surface, and
P-GaN is grown on the N-GaN of preceding one-step growth upper surface.The P-GaN grown lattice structure is with being used as its epitaxy substrate
SiC lattice structure and N-GaN lattice structure be adapted to completely.
Step 108, table top (MESA) photoetching and etching, isolation channel is formed in the p-type GaN layer, so that the N-type
GaN layer and p-type GaN layer form multiple independent PN junction structures；Wherein, the p-type GaN retained after the etching be located at N-type GaN layer and
On second lattice adaptation layer.
Specifically, as shown in fig. 7, using MESA photoetching and etching, isolation channel is formed on P-GaN layers；Isolation channel is used for
Multiple N-GaN, P-GaN repetitive structure are separated, each N-GaN and P-GaN region is formed an independent PN junction structure.
Wherein, the first lattice adaptation layer and the second lattice adaptation layer are two adjacent lattice adaptation layers, they respectively with N-GaN and P-
GaN, which connects, forms LED N-type region domain and p type island region domain.
Step 109, SiO is graphically deposited2, to fill the isolation channel.
Specifically, as shown in figure 8, in the isolation channel that preceding step etches, SiO is filled2, to be formed between multiple LED
Isolation structure.
It is prepared by the method that above-mentioned steps realize directly by MOCVD in the lattice adaptation layer of laminated circuit board upper surface
LED, in order that laminated circuit board has the function being electrically connected with external chip or circuit, it is also necessary to perform following steps
Suddenly, exposing the contact electrode being electrically connected with external chip or circuit in the lower surface of laminated circuit board.
Step 110, the lower surface of the laminated circuit board is ground and cleaned；
Specifically, before the step 110 is performed, it is also necessary to make protective layer in the upper surface of laminated circuit board, prevent
Only when being ground to lower surface, physical damnification is caused to upper surface.
Step 111, SiO is carried out to the lower surface of the laminated circuit board2Etching, expose and be used for and external chip or circuit
The contact electrode being electrically connected.
Specifically, the as shown in figure 9, SiO of laminated circuit board lower surface2Have in layer in laminated circuit board preparation process
, only need to be by SiO with regard to contact electrode well prepared in advance2Layer, which etches away, can expose contact electrode.Etching can use plasma
The method of etching or reactive ion etching is carried out.
After step 111, it is also necessary to which the protective layer of laminated circuit board upper surface made before step 110 is carried out
Remove, so that the LED epitaxial growth circuit board for subsequently having LED to preparing the growth completed carries out performance detection.
Epitaxy growth LED direct on laminated circuit board provided in an embodiment of the present invention method, by using MOCVD's
Method directly carries out LED epitaxial growth growth on the LED laminated circuit boards with lattice adaptation layer, compared to traditional laminated circuit board
Preparation is opened with LED points and carries out integrated technique again, simplifies processing step, multiple LED of synchronous growth are with preferably single
Property, and the control of size spacing is more accurate.
Application of the embodiment of the present invention above method carries out the LED epitaxial growth circuit board of epitaxy preparation, and its electric property meets one
As LED C-V characteristic, photoelectric characteristic etc. requirement.
Major parameter is as shown in the table：
Table 1
Gray scale (MCD)
Table 2
Its LED characteristic variations curve specifically can be as shown in Figure 10, and the schematic diagram of light intensity and lighting angle is as shown in figure 11.
Accordingly, LED epitaxial growth circuit board prepared by the method provided using the embodiment of the present invention 1 can apply to LED and show
Show in module.Figure 12 is the profile of LED display modules provided in an embodiment of the present invention.As shown in figure 12, LED display modules bag
Include：LED epitaxial growth circuit board 4, chip support 3, interface arrangement 6, dedicated IC chip 9, heat dissipating layer 8 and heat-dissipating cover plate 10；
LED epitaxial growth circuit board 4 is arranged on chip support 3, covered with ceramic glaze layer 2 on the P-GaN of its upper surface,
For strengthening the heat dispersion of LED epitaxial growth circuit board；The upside-down mounting of dedicated IC chip 9 is arranged at the bottom surface of package substrate 4, leads to
Cross BGA techniques or be connected using layer process is bonded with the contact electrode 41 of LED epitaxial growth circuit board 4, and by heat dissipating layer 8 and dissipate
Hot cover plate 10 assists dedicated IC chip 9 to radiate；Interface arrangement 6 is arranged at bottom surface and the heat-dissipating cover plate 10 of package substrate 4
Between chip support 3 in, and the opening 101 by having on heat-dissipating cover plate 10 is to exposing outside.
LED epitaxial growth circuit board 4 is electrically connected by interface arrangement 6 with external circuit.Interface arrangement 6 can be standard
USB interface or compatible power supply and the USB interface of data communication.Interface arrangement 6 is connected by cementing with LED epitaxial growth circuit board 4.
There is the electric connection line (not shown) of connection external circuit, such as the use of electric wire, contact pin or other forms in interface arrangement 6
In the electric connection line of electrical connection.LED epitaxial growth circuit board 4 and dedicated IC chip 9 and the electric connection line phase in interface arrangement 6
Connection, so as to realize the electrical connection with external circuit.
Also there is heat dissipating layer 8, it is preferred that heat dissipating layer 8 radiates for silicon between heat-dissipating cover plate 10 and dedicated IC chip 9
Glue is made；Heat-dissipating cover plate 10 is aluminium cover plate.
The LED display modules of the present embodiment also include fixture 7, and the fixture 7 can be magnetic installation inserts, certainly
The installation inserts of other modes can be used as fixture 7.Heat-dissipating cover plate 10 is anchored on chip support 3 by fixture 7.
The present embodiment LED display modules also include diaphragm 1, are covered on ceramic glaze layer 2.Protect mould 1 preferably simultaneous
There is the diaphragm of optical grating function.
The LED display modules of the embodiment of the present invention, there is better performance unicity, and LED size spacing control
It is more accurate, enhance the comfort level of human eye viewing.
Above-described embodiment, the purpose of the present invention, technical scheme and beneficial effect are carried out further
Describe in detail, should be understood that the embodiment that the foregoing is only the present invention, be not intended to limit the present invention
Protection domain, within the spirit and principles of the invention, any modification, equivalent substitution and improvements done etc., all should include
Within protection scope of the present invention.
Claims (10)
- A kind of 1. method of epitaxy growth LED direct on laminated circuit board, it is characterised in that the lamination electricity The upper surface of road plate has the lattice adaptation layer deposited on the metal pad electrode of laminated circuit board, and methods described includes：The upper surface of the laminated circuit board is ground and cleaned；Ion implanting is carried out to the upper surface of the laminated circuit board, so that the conductive energy of lattice adaptation layer；The upper surface of the laminated circuit board is ground, damaging layer caused by remove ion implanting；Inductively coupled plasma ICP etchings are carried out to the upper surface of the laminated circuit board, are roughened the laminated circuit board Upper surface, to form the spherical island of projection, increase the fastening power of lattice growth；Metal organic chemical vapor deposition MOCVD grows N-type GaN layer and is patterned etching；Protected after the graphical etching The N-type GaN layer stayed is located on the first lattice adaptation layer；ICP etchings are carried out to the upper surface of the laminated circuit board, are roughened the upper surface of the laminated circuit board, it is convex to be formed The spherical island risen, increase the fastening power of lattice growth；MOCVD growth P-type GaN layers；Table top MESA photoetching and etching, isolation channel is formed in the p-type GaN layer, so that the N-type GaN layer and p-type GaN layer Form multiple independent PN junction structures；Wherein, the p-type GaN retained after the etching is located at N-type GaN layer and the second lattice adaptation layer On；Wherein, the laminated circuit board is inorganic laminated circuit board.
- 2. according to the method for claim 1, it is characterised in that methods described also includes：Graphical deposit SiO2, to fill the isolation channel.
- 3. according to the method for claim 2, it is characterised in that methods described also includes：The lower surface of the laminated circuit board is ground and cleaned；SiO is carried out to the lower surface of the laminated circuit board2Etching, expose for being electrically connected with external chip or circuit Contact electrode.
- 4. a kind of direct epitaxy on laminated circuit board using described in the claims 1 grows the side of LED LED epitaxial growth circuit board prepared by method.
- A kind of 5. LED display modules of the LED epitaxial growth circuit board including described in the claims 4.
- 6. LED display modules according to claim 5, it is characterised in that the LED display modules also include：Chip branch Frame, interface arrangement, dedicated IC chip, heat dissipating layer and heat-dissipating cover plate；It is exiting surface at the top of the LED epitaxial growth circuit board, top is set up in the chip support, the special integrated electricity Road flip-chip is arranged at the bottom surface of package substrate, is fixed on the chip support by the heat dissipating layer and the heat-dissipating cover plate It is interior；The interface arrangement is arranged in the chip support between the bottom surface of the package substrate and the heat-dissipating cover plate, and is passed through The outward opening having on the heat-dissipating cover plate exposes；The LED epitaxial growth circuit board electrically connects with the dedicated IC chip；The package substrate is filled by the interface Put and be electrically connected with external circuit.
- 7. LED display unit module according to claim 6, it is characterised in that the LED display unit module also wraps Include：Ceramic glaze layer, it is arranged on the top exiting surface of the LED epitaxial growth circuit board, for strengthening LED epitaxial growth circuit onboard led Heat dispersion.
- 8. LED display unit module according to claim 7, it is characterised in that the LED display unit module also wraps Include：Diaphragm, there is optical grating structure, be covered on the ceramic glaze layer.
- 9. LED display unit module according to claim 6, it is characterised in that the LED display unit module also wraps Include：Fixture, the heat-dissipating cover plate are anchored on the chip support by the fixture.
- 10. LED display unit module according to claim 6, it is characterised in that the interface arrangement be compatible power supply and The USB interface of data communication, is connected by cementing with the package substrate.
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| KR101159782B1 (en) * | 2010-02-05 | 2012-06-26 | 신왕균 | Transparent led wafer module and method of manufacturing the same |
| CN103066179B (en) * | 2013-01-14 | 2015-12-02 | 楼刚 | Sapphire Substrate can from the gallium nitride film preparation epitaxial structure peeled off and method |
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