CN105225932A - A kind of method optimizing the diffusion technology time - Google Patents
A kind of method optimizing the diffusion technology time Download PDFInfo
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- CN105225932A CN105225932A CN201510660954.XA CN201510660954A CN105225932A CN 105225932 A CN105225932 A CN 105225932A CN 201510660954 A CN201510660954 A CN 201510660954A CN 105225932 A CN105225932 A CN 105225932A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000005516 engineering process Methods 0.000 title claims abstract description 16
- 238000001816 cooling Methods 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 160
- 229910052757 nitrogen Inorganic materials 0.000 claims description 80
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 40
- 239000001301 oxygen Substances 0.000 claims description 40
- 229910052760 oxygen Inorganic materials 0.000 claims description 40
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract description 2
- 238000013082 photovoltaic technology Methods 0.000 abstract description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 2
- 238000005245 sintering Methods 0.000 abstract description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 238000011161 development Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of method optimizing the diffusion technology time, belong to field of photovoltaic technology.Photovoltaic crystal silicon battery manufacture comprises cleaning and texturing, spreads, washes the operations such as phosphorus etching, PECVD and silk-screen sintering.As the core of photovoltaic cell, the process time of diffusion is longer, and the longer diffusion technology time can affect diffusion production capacity.When not reducing conversion efficiency, the present invention shortens the process time of diffusion cooling step, increases diffusion production capacity, reduce production cost within the equal time.
Description
Technical field
The present invention relates to a kind of method optimizing the diffusion technology time, belong to field of photovoltaic technology.
Background technology
Along with the development of modern industrialization, non-renewable energy resources reduce day by day, and energy problem more and more becomes the bottleneck of restriction international community economic development, and a lot of country comes into effect " sunlight program ", and exploitation solar energy resources, for economic development provides the new motive force of development.Under the promotion of international photovoltaic market great potential, the solar cell manufacturer of various countries not only competitively drops into huge fund, expanding production, also sets up research and development institution one after another, researches and develops new solar cell project, improves quality and the conversion efficiency of product.
At photovoltaic industry with keen competition, improve conversion efficiency and reduce by the two large core objectives that production cost becomes photovoltaic manufacturer.Diffusing procedure is the core process that photovoltaic cell manufactures.The diffusion technology time is longer, reduce the diffusion technology time, can within the same time improving yield, reduce product cost, improving product competitiveness.
Summary of the invention
The object of the present invention is to provide a kind of method optimizing the diffusion technology time, by reducing the time of rear oxidation and cooling, promoting diffusion production capacity and reducing costs.
Optimize the method for diffusion technology time, concrete steps are:
(1) start: the time is 10s, and temperature is set to 770 ~ 790 DEG C, and large nitrogen flow is 8L/min, and the flow of little nitrogen and oxygen is 0L/min;
(2) enter boat: the time is 800s, and temperature is set to 770 ~ 790 DEG C, large nitrogen flow is 8L/min, and the flow of little nitrogen and oxygen is 0L/min;
(3) heat up: the time is 500s, and temperature is set to 770 ~ 790 DEG C, and large nitrogen flow is 18L/min, and the flow of little nitrogen and oxygen is 0L/min;
(4) front oxidation: the time is 200s, and temperature is set to 770 ~ 790 DEG C, large nitrogen flow is 18L/min, and little nitrogen flow is 0L/min, and oxygen flow is 1 ~ 5L/min;
(5) first time deposits: the time is 900s, and temperature is set to 770 ~ 790 DEG C, and large nitrogen flow is 15L/min, and little nitrogen flow is 2.0L/min, and oxygen flow is 1.0L/min;
(6) advance: the time is 500s, and temperature is set to 800 ~ 820 DEG C, and large nitrogen flow is 18L/min, and little nitrogen flow is 0L/min, and oxygen flow is 0L/min;
(7) second time deposition: the time is 500s, and temperature is set to 830 ~ 850 DEG C, and large nitrogen flow is 15.9L/min, and little nitrogen flow is 1.4L/min, and oxygen flow is 0.7L/min;
(8) rear oxidation and cooling: the time is 400s, and temperature is set to 700 ~ 800 DEG C, large nitrogen flow is 14L/min, and little nitrogen flow is 0L/min, and oxygen flow is 4L/min;
(9) go out boat: the time is 800s, and temperature is set to 750 DEG C, large nitrogen flow is 8L/min, and the flow of little nitrogen and oxygen is 0L/min;
(10) terminate: the time is 10s, and temperature is set to 780 DEG C, and large nitrogen flow is 8L/min, and the flow of little nitrogen and oxygen is 0L/min;
The square resistance that silicon chip prepared by the present invention is tested by four point probe is at 70 ~ 90 Ω/, the etching, PECVD, silk-screen sintering etc. in rear road are completed by traditional handicraft, the present invention obtains the average conversion efficiency of cell piece and slightly promotes, but can effectively reduce the diffusion technology time, promote diffusion production capacity, reduce production cost.
Embodiment
The following stated be only a kind of method optimizing the diffusion technology time disclosed in this invention; it should be pointed out that for the person of ordinary skill of the art, do not depart from the present invention create the prerequisite of design under; can also make some distortion and improvement, these all belong to protection scope of the present invention.
Embodiment:
Optimize the method for diffusion technology time, concrete implementation step is as follows:
(1) start: the time is 10s, and temperature is set to 770 ~ 790 DEG C, and large nitrogen flow is 8L/min, and the flow of little nitrogen and oxygen is 0L/min;
(2) enter boat: the time is 800s, and temperature is set to 770 ~ 790 DEG C, large nitrogen flow is 8L/min, and the flow of little nitrogen and oxygen is 0L/min;
(3) heat up: the time is 500s, and temperature is set to 770 ~ 790 DEG C, and large nitrogen flow is 18L/min, and the flow of little nitrogen and oxygen is 0L/min;
(4) front oxidation: the time is 200s, and temperature is set to 770 ~ 790 DEG C, large nitrogen flow is 18L/min, and little nitrogen flow is 0L/min, and oxygen flow is 1 ~ 5L/min;
(5) first time deposits: the time is 900s, and temperature is set to 770 ~ 790 DEG C, and large nitrogen flow is 15L/min, and little nitrogen flow is 2.0L/min, and oxygen flow is 1.0L/min;
(6) advance: the time is 500s, and temperature is set to 800 ~ 820 DEG C, and large nitrogen flow is 18L/min, and little nitrogen flow is 0L/min, and oxygen flow is 0L/min;
(7) second time deposition: the time is 500s, and temperature is set to 830 ~ 850 DEG C, and large nitrogen flow is 15.9L/min, and little nitrogen flow is 1.4L/min, and oxygen flow is 0.7L/min;
(8) rear oxidation and cooling: the time is 400s, and temperature is set to 700 ~ 800 DEG C, large nitrogen flow is 14L/min, and little nitrogen flow is 0L/min, and oxygen flow is 4L/min;
(9) go out boat: the time is 800s, and temperature is set to 750 DEG C, large nitrogen flow is 8L/min, and the flow of little nitrogen and oxygen is 0L/min;
(10) terminate: the time is 10s, and temperature is set to 780 DEG C, and large nitrogen flow is 8L/min, and the flow of little nitrogen and oxygen is 0L/min;
Comparative example:
Conventional diffusion technique, concrete implementation step is as follows:
(1) start: the time is 10s, and temperature is set to 770 ~ 790 DEG C, and large nitrogen flow is 8L/min, and the flow of little nitrogen and oxygen is 0L/min;
(2) enter boat: the time is 800s, and temperature is set to 770 ~ 790 DEG C, large nitrogen flow is 8L/min, and the flow of little nitrogen and oxygen is 0L/min;
(3) heat up: the time is 500s, and temperature is set to 770 ~ 790 DEG C, and large nitrogen flow is 18L/min, and the flow of little nitrogen and oxygen is 0L/min;
(4) front oxidation: the time is 200s, and temperature is set to 770 ~ 790 DEG C, large nitrogen flow is 18L/min, and little nitrogen flow is 0L/min, and oxygen flow is 1 ~ 5L/min;
(5) first time deposits: the time is 900s, and temperature is set to 770 ~ 790 DEG C, and large nitrogen flow is 15L/min, and little nitrogen flow is 2.0L/min, and oxygen flow is 1.0L/min;
(6) advance: the time is 500s, and temperature is set to 800 ~ 820 DEG C, and large nitrogen flow is 18L/min, and little nitrogen flow is 0L/min, and oxygen flow is 0L/min;
(7) second time deposition: the time is 500s, and temperature is set to 830 ~ 850 DEG C, and large nitrogen flow is 15.9L/min, and little nitrogen flow is 1.4L/min, and oxygen flow is 0.7L/min;
(8) rear oxidation and cooling: the time is 1800s, and temperature is set to 700 ~ 800 DEG C, large nitrogen flow is 14L/min, and little nitrogen flow is 0L/min, and oxygen flow is 4L/min;
(9) go out boat: the time is 800s, and temperature is set to 750 DEG C, large nitrogen flow is 8L/min, and the flow of little nitrogen and oxygen is 0L/min;
(10) terminate: the time is 10s, and temperature is set to 780 DEG C, and large nitrogen flow is 8L/min, and the flow of little nitrogen and oxygen is 0L/min;
Embodiment and comparative example adopt identical silicon wafer raw material: P type polysilicon chip, resistivity 0.5 ~ 3 Ω cm, 1200 are respectively selected to carry out conventional cleaning and texturing respectively, adopt technique of the present invention and conventional diffusion skill respectively, subsequent technique all adopts common process to produce, contrast final unit for electrical property parameters, as shown in the table:
As can be seen from above-mentioned data, compare with conventional diffusion technique, conversion efficiency of the present invention slightly promotes, and the present invention is 4620s diffusion technology total time used, the conventional diffusion process time is 6020s, diffusion technology time shorten 23%, and diffusion production capacity can promote more than 20%, thus can production cost be reduced, improving product competitiveness.
Claims (1)
1. optimize the method for diffusion technology time, it is characterized by: concrete steps are:
(1) start: the time is 10s, and temperature is set to 770 ~ 790 DEG C, and large nitrogen flow is 8L/min, and the flow of little nitrogen and oxygen is 0L/min;
(2) enter boat: the time is 800s, and temperature is set to 770 ~ 790 DEG C, large nitrogen flow is 8L/min, and the flow of little nitrogen and oxygen is 0L/min;
(3) heat up: the time is 500s, and temperature is set to 770 ~ 790 DEG C, and large nitrogen flow is 18L/min, and the flow of little nitrogen and oxygen is 0L/min;
(4) front oxidation: the time is 200s, and temperature is set to 770 ~ 790 DEG C, large nitrogen flow is 18L/min, and little nitrogen flow is 0L/min, and oxygen flow is 1 ~ 5L/min;
(5) first time deposits: the time is 900s, and temperature is set to 770 ~ 790 DEG C, and large nitrogen flow is 15L/min, and little nitrogen flow is 2.0L/min, and oxygen flow is 1.0L/min;
(6) advance: the time is 500s, and temperature is set to 800 ~ 820 DEG C, and large nitrogen flow is 18L/min, and little nitrogen flow is 0L/min, and oxygen flow is 0L/min;
(7) second time deposition: the time is 500s, and temperature is set to 830 ~ 850 DEG C, and large nitrogen flow is 15.9L/min, and little nitrogen flow is 1.4L/min, and oxygen flow is 0.7L/min;
(8) rear oxidation and cooling: the time is 400s, and temperature is set to 700 ~ 800 DEG C, large nitrogen flow is 14L/min, and little nitrogen flow is 0L/min, and oxygen flow is 4L/min;
(9) go out boat: the time is 800s, and temperature is set to 750 DEG C, large nitrogen flow is 8L/min, and the flow of little nitrogen and oxygen is 0L/min;
(10) terminate: the time is 10s, and temperature is set to 780 DEG C, and large nitrogen flow is 8L/min, and the flow of little nitrogen and oxygen is 0L/min.
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| CN201510660954.XA CN105225932A (en) | 2015-10-14 | 2015-10-14 | A kind of method optimizing the diffusion technology time |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449868A (en) * | 2016-08-31 | 2017-02-22 | 东方日升新能源股份有限公司 | Diffusion method of solar cell silicon chip |
| CN106449874A (en) * | 2016-09-30 | 2017-02-22 | 中国电子科技集团公司第四十八研究所 | Diffusion technology of Michigan polycrystalline silicon solar cell |
| CN108048821A (en) * | 2017-12-14 | 2018-05-18 | 尚德太阳能电力有限公司 | Promote the method and its application of tubular type pecvd process production capacity |
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Application publication date: 20160106 |