CN101931023A - Crystalline silicon solar cell manufacturing method - Google Patents
Crystalline silicon solar cell manufacturing method Download PDFInfo
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- CN101931023A CN101931023A CN2009101084751A CN200910108475A CN101931023A CN 101931023 A CN101931023 A CN 101931023A CN 2009101084751 A CN2009101084751 A CN 2009101084751A CN 200910108475 A CN200910108475 A CN 200910108475A CN 101931023 A CN101931023 A CN 101931023A
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- solar cell
- crystalline silicon
- silicon solar
- cell manufacturing
- nitrogen
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a crystalline silicon solar cell manufacturing method capable of improving diffusion quality and square resistance consistency, which comprises the following steps: a), diffusing a phosphorous source on the surface of a crystalline silicon chip to form a PN junction; and b) processing the polycrystalline silicon chip in an atmosphere of nitrogen and oxygen at the temperature of 700 to 1,200 DEG C for 10 to 60 minutes. When the technical scheme of the invention is adopted, the production process is characterized by low cost, simple operation and the like; and the consistency of in-chip resistance and in-batch square resistance is improved, the diffusion production efficiency is improved effectively, and the rate of the finished products is improved.
Description
[technical field]
The present invention relates to the manufacture method of crystal silicon solar energy battery, refer in crystalline silicon, mix phosphorus especially to make the method for PN junction.
[background technology]
PN junction is the core of crystal silicon solar energy battery, and the making quality of PN junction directly has influence on the conversion efficiency of solar cell.Because solar cell is a shallow junction structures, and is bigger with the difference of other semiconductor device.The silicon solar cell that traditional handicraft is made adopts the crystal silicon chip of P type substrate usually, in the boiler tube of sealing, feed the phosphorus oxychloride liquid source, usually use nitrogen phosphorus oxychloride to be brought in the boiler tube as carrier, under the condition of high temperature, form the N type emitter region of mixing phosphorus afterwards by chemical reaction and phosphorus atoms diffusion process.In pyroprocess, POCl
3Carry by nitrogen and to enter quartz ampoule, feed a large amount of nitrogen and oxygen simultaneously, purpose is to form malleation and avoid entering of ambient atmos in boiler tube, and makes diffusion more even, oxygen then participates in chemical reaction, also can avoid the damage of diffusion process to silicon chip surface.Yet the present application people finds, then need the very long process time as realizing that temperature is controlled, the mass ratio of diffusion is difficult to control, and is relatively poor with batch interior side's resistance consistency in the sheet, diffusion technology stability and repeatability are not high, the bad conversion efficiency that can influence the battery sheet of consistency.
[summary of the invention]
For solving crystal silicon solar energy battery PN junction diffusion poor quality, the problem that consistency is relatively poor the invention provides a kind of raising diffusion quality and the conforming crystalline silicon solar cell manufacturing method of side's resistance.
Crystalline silicon solar cell manufacturing method disclosed by the invention comprises the steps:
A) in crystal silicon chip diffusion into the surface phosphorus source to form PN junction;
B) then polysilicon chip is carried out 700-1200 ℃ of high-temperature process under nitrogen and oxygen atmosphere, the time of described high-temperature process is 10-60 minute.
Adopt technical solution of the present invention, manufacture characteristics such as to have cost in the process low, simple to operate.Adopt technical solution of the present invention, can effectively improve in the sheet and the consistency of batch interior side resistance, can effectively improve the production efficiency of diffusion, improve rate of finished products.
[embodiment]
In order to make technical problem to be solved by this invention, technical scheme and beneficial effect clearer,, the present invention is described in further detail below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Embodiment
Present embodiment desires to introduce in detail the manufacture method of crystal silicon solar energy battery, mainly comprises following two steps: a) in crystal silicon chip diffusion into the surface phosphorus source to form PN junction; B) then polysilicon chip is carried out 700-1200 ℃ of high-temperature process under nitrogen and oxygen atmosphere.
Step a) can adopt various known method in the industry for diffuseing to form the PN junction process.
Such as: use nitrogen as carrier with phosphorus oxychloride (POCl
3) liquid source brings in the boiler tube of the sealing that is placed with crystal silicon chip, aerating oxygen under hot conditions simultaneously, diffusion temperature is the 800-870 degree, the time 20-40 of TongYuan minute, makes POCl
3Be decomposed into PCl
5And P
2O
5, PCl
5And O
2Reaction obtains P
2O
5, P
2O
5P diffuses in the silicon chip with Si reaction generation, and the overall reaction equation is as follows:
POCl
3+O
2+Si→Cl
2↑+SiO
2+P↓
The zone of having mixed phosphorus in the silicon chip just becomes N type district, and former is the P type, and PN junction has just formed like this.For example, the adopting process parameter is as shown in table 1 below:
Table 1:
Be that whole technical process is divided into 3 stages; temperature all is controlled at 860 ℃; phase I feeds nitrogen 900s; so that it is under the nitrogen protection atmosphere; second stage is aerating oxygen 2500ml under the situation that continues feeding nitrogen, and the phase III feeds phosphorus source current-carrying gas 1200ml under the situation that continues aerating oxygen; promptly, make phosphorus in the inwardly diffusion of crystal silicon chip surface toward interior feeding phosphorus source.
Perhaps by spraying the phosphorus source on the crystal silicon chip surface, phosphorus source cocoa is selected from phosphorous slurries such as metaphosphoric acid, phosphoric acid slurry, and back while aerating oxygen under 800-870 ℃ of hot conditions is handled, and phosphorous diffusion is achieved the goal to silicon chip inside.For example crystal silicon chip is placed on the conveyer belt, crystal silicon chip has shower nozzle to crystal silicon chip surface spraying phosphorus source in the process that moves with conveyer belt, after spraying finishes, the conveyer belt band crystal silicon chip through the high-temperature region in the stove, crystal silicon chip is heated in the high-temperature region, and phosphorus source and silicon chip reaction realize phosphorus doping making PN junction.
In above-mentioned steps, in crystal silicon chip, spread phosphorus, and then through step b) carry out high temperature become into the oxidation gettering.
The flow-rate ratio scope of nitrogen in the step b) and oxygen is 100: 1-1: 10, be preferably 50: 1-1: and 3, most preferably be 10: 1-1: 1.The high-temperature process temperature range is preferably 800-1000 ℃, most preferably is 850-950 ℃.Under oxygen and nitrogen flow ratio and the preferred more situation of temperature, it is also good more that the consistency of side's resistance can be come more, and the extreme difference of side's resistance can reduce in the sheet, and the processing time is generally unrestricted, high temperature is become into fully getting final product with the oxidation gettering, in general, the long time also need not, through empirical Calculation, greatly about high-temperature process 10-60 minute, high temperature is become into fully carrying out with the process of oxidation gettering, and needn't lose time and oxygen, nitrogen, in order to be effective, shorten the processing time.At this moment, no longer feed the phosphorus source in this hot environment.This step is no longer mixed phosphorus in crystal silicon chip, but original phosphorus that has mixed is redistributed, and the phosphorus on surface is further spread to internal layer.Can make 9 side's resistance consistency in the sheet, between sheet better, help improving the efficient of battery.
After step a) is finished, take out the crystal silicon chip that has diffuseed to form PN junction, put into another tube furnace then, in tube furnace, feed nitrogen and oxygen, tube furnace is heated, the crystal silicon chip in the boiler tube is heated, the temperature of heating is 700-1200 ℃.Concrete processing step is as shown in table 2 below:
Table 2:
| Step | Time (s) | O2(ml) | Nitrogen (ml) | Temperature (℃) |
| 1 | ?5000 | 2000 | 15000 | 900 |
Promptly inwardly feed 2000ml oxygen and 15000ml nitrogen, maintain the temperature at 900 ℃, duration 5000s can make high temperature become into more deep with the process of oxidation gettering like this, reacts more complete.
After steps such as plated film, silk screen printing and sintering prepare crystal silicon solar energy battery,, therefore seldom do description because of it is conventionally known to one of skill in the art.
Comparative Examples
Only carry out step a), no step b) is promptly pressed technology to prepare solar energy battery in the table 1, and all the other steps are identical with embodiment.
Conclusion
Then the crystal silicon solar energy battery that obtains through embodiment and Comparative Examples preparation method is carried out 9 side's resistance tests, respectively get 5 crystal silicon solar energy batteries that make through embodiment and Comparative Examples, be arranged as s1, s2 respectively according to the order of sequence, s3, s4, s5 and q1, q2, q3, q4, q5.The result is as shown in table 3 below:
Table 3:
As above show as can be known, obviously, obviously the extreme difference than comparative example is little for its extreme difference of crystal silicon solar energy battery that the employing embodiment of the invention makes, and the difference between each sheet class extreme difference is also less.The extreme difference that the resistance test of 9 of embodiment side obtains is between 5.1-5.5, and the extreme difference that 9 side's resistance tests of Comparative Examples obtain obviously adopts technical solution of the present invention between 13.8-17.1, in the sheet and batch in the consistency of side's resistance better.
Claims (9)
1. a crystalline silicon solar cell manufacturing method comprises the steps:
A) in crystal silicon chip diffusion into the surface phosphorus source to form PN junction;
B) then polysilicon chip is carried out 700-1200 ℃ of high-temperature process under nitrogen and oxygen atmosphere, the time of described high-temperature process is 10-60 minute.
2. crystalline silicon solar cell manufacturing method as claimed in claim 1, it is characterized in that: the method for described step a) is placed with in the boiler tube of crystal silicon chip for using nitrogen as carrier phosphorus oxychloride to be fed, simultaneously aerating oxygen under 800-870 ℃ of hot conditions.
3. crystalline silicon solar cell manufacturing method as claimed in claim 1 is characterized in that: the method for described step a) is placed on crystal silicon chip then and carries out 800-870 ℃ of high-temperature process under the oxygen atmosphere in crystal silicon chip surface spraying phosphorus source.
4. crystalline silicon solar cell manufacturing method as claimed in claim 3 is characterized in that: described phosphorus source is the slurry of metaphosphoric acid, phosphoric acid.
5. crystalline silicon solar cell manufacturing method as claimed in claim 1 is characterized in that: the flow-rate ratio scope of step b) nitrogen and oxygen is 100: 1-1: 10.
6. crystalline silicon solar cell manufacturing method as claimed in claim 5 is characterized in that: the flow-rate ratio scope of step b) nitrogen and oxygen is 50: 1-1: 3.
7. crystalline silicon solar cell manufacturing method as claimed in claim 6 is characterized in that: the flow-rate ratio scope of step b) nitrogen and oxygen is 10: 1-1: 1.
8. crystalline silicon solar cell manufacturing method as claimed in claim 1 is characterized in that: the temperature range of high-temperature process is 800-1000 ℃ in the step b).
9. crystalline silicon solar cell manufacturing method as claimed in claim 8 is characterized in that: the temperature range of high-temperature process is 850-950 ℃ in the step b).
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|---|---|---|---|
| CN2009101084751A CN101931023A (en) | 2009-06-26 | 2009-06-26 | Crystalline silicon solar cell manufacturing method |
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|---|---|---|---|
| CN2009101084751A CN101931023A (en) | 2009-06-26 | 2009-06-26 | Crystalline silicon solar cell manufacturing method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102593262A (en) * | 2012-03-14 | 2012-07-18 | 苏州阿特斯阳光电力科技有限公司 | Diffusion method for solace cell with polycrystalline silicon selective emitter |
| CN103018563A (en) * | 2012-12-12 | 2013-04-03 | 烟台正海科技有限公司 | Method for testing indium tin oxide (ITO) sheet resistance of ITO membrane coated by metal |
| CN103477450A (en) * | 2011-04-21 | 2013-12-25 | 应用材料公司 | Method of forming P-N junction in solar cell substrate |
| CN105225932A (en) * | 2015-10-14 | 2016-01-06 | 江西展宇新能源股份有限公司 | A kind of method optimizing the diffusion technology time |
-
2009
- 2009-06-26 CN CN2009101084751A patent/CN101931023A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103477450A (en) * | 2011-04-21 | 2013-12-25 | 应用材料公司 | Method of forming P-N junction in solar cell substrate |
| CN102593262A (en) * | 2012-03-14 | 2012-07-18 | 苏州阿特斯阳光电力科技有限公司 | Diffusion method for solace cell with polycrystalline silicon selective emitter |
| CN102593262B (en) * | 2012-03-14 | 2015-04-01 | 苏州阿特斯阳光电力科技有限公司 | Diffusion method for solace cell with polycrystalline silicon selective emitter |
| CN103018563A (en) * | 2012-12-12 | 2013-04-03 | 烟台正海科技有限公司 | Method for testing indium tin oxide (ITO) sheet resistance of ITO membrane coated by metal |
| CN105225932A (en) * | 2015-10-14 | 2016-01-06 | 江西展宇新能源股份有限公司 | A kind of method optimizing the diffusion technology time |
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Application publication date: 20101229 |