CN105220224A - A kind of base gradual doped silicon carbide thin film epitaxy preparation method - Google Patents
A kind of base gradual doped silicon carbide thin film epitaxy preparation method Download PDFInfo
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- CN105220224A CN105220224A CN201510666085.1A CN201510666085A CN105220224A CN 105220224 A CN105220224 A CN 105220224A CN 201510666085 A CN201510666085 A CN 201510666085A CN 105220224 A CN105220224 A CN 105220224A
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Abstract
The present invention relates to a kind of base gradual doped silicon carbide thin film epitaxy preparation method, the method comprises: silicon carbide substrates is placed in the reaction chamber of silicon carbide CVD equipment by (1), is evacuated by reaction chamber; (2) H is passed into reaction chamber
2until reaction chamber air pressure arrives 100mbar, keep reaction chamber air pressure constant, by H
2flow increases to 60L/min gradually, continues to ventilate to reaction chamber; (3) open radio-frequency coil induction heater RF, increase the power of this well heater gradually, carry out original position etching when reaction chamber temperature raises gradually to 1400 DEG C; (4) when reaction chamber temperature reaches 1580 DEG C-1600 DEG C, keep temperature and invariablenes pressure of liquid, Al source flux is set, passes into C to reaction chamber
3h
8and SiH
4, regulated by gradual change and pass into C in reaction chamber
3h
8and SiH
4the gradual doped silicon carbide film epitaxial layer of flow growing P-type.Method of the present invention utilizes the CVD equipment of silicon carbide, prepares the silicon carbide epitaxial layers that longitudinal doping content gradient is controlled, meets the requirement of the low-doped epitaxial film of preparation gradient.
Description
Technical field
The present invention relates to a kind of semiconductor device processing technology field, be specifically related to a kind of base gradual doped silicon carbide thin film epitaxy preparation method.
Background technology
Silicon carbide has the advantages such as broad-band gap, high thermal conductivity, high breakdown strength, high electronics saturation drift velocity, high hardness, also has very strong chemical stability.These excellent physics and electric property make silicon carbide have a lot of advantage in application.The wide silicon carbide intrinsic carrier that makes in forbidden band at high temperature still can keep lower concentration, under being thus operated in very high temperature.High breakdown field strength makes silicon carbide can bear high strength of electric field, and this makes silicon carbide may be used for making high pressure, high-power semiconducter device.High heat conductance makes silicon carbide have good thermal diffusivity, contribute to the power density and integrated level, the attached cooling infrastructure of minimizing that improve device, thus making that the volume and weight of system reduces widely, efficiency then improves widely, this is for the electron device very advantageous in development space field.The saturated electrons travelling speed of silicon carbide is very high, and this characteristic also makes it may be used for radio frequency or microwave device, thus improves devices function speed.
The carrier concentration of carbofrax material is the basic electricity parameter of materials and devices.This parameter is realized by material doped control.Therefore, the doping of silicon carbide epitaxy material is one of the critical process in device preparation.But because the bonding strength of silicon carbide is high, the doping in device making technics can not adopt diffusion technique, extension controlled doping and high temperature tension doping can only be utilized.High temperature tension can cause a large amount of lattice damage, forms a large amount of lattice imperfection, even if annealing is also difficult to eliminate completely, had a strong impact on the performance of device, and ion implantation efficiency is very low, is thus not suitable for doing big area doping.Meanwhile, when preparing the semiconducter device of some multilayered structures, need the gradient of the longitudinal doping content of epitaxial film controlled.Only have by Reasonable adjustment growth parameter(s), growing doping and reaching the epitaxial film of pre-provisioning request, just can produce the satisfactory device of performance, thus the grade doping of silicon carbide epitaxial layers controls to be the difficult point that during current device manufactures one is very large.
Summary of the invention
For solving above-mentioned deficiency of the prior art, the object of this invention is to provide the preparation method of a kind of P type gradual doping doped silicon carbide epitaxial film, utilize the CVD equipment of silicon carbide, prepare the silicon carbide epitaxial layers that longitudinal doping content gradient is controlled, meet the requirement of the low-doped epitaxial film of preparation gradient.
The object of the invention is to adopt following technical proposals to realize:
The invention provides a kind of base gradual doped silicon carbide thin film epitaxy preparation method, its improvements are, described preparation method comprises the steps:
Step one, is placed into silicon carbide substrates in the reaction chamber of silicon carbide chemical vapor depsotition equipment (CVD equipment is a kind of equipment of epitaxial film), is evacuated by reaction chamber;
Step 2, in the hydrogen gas stream reacting by heating room;
Step 3, carries out original position etching to silicon carbide substrates;
Step 4, arranges growth conditions, starts growing silicon carbide epitaxial film;
Step 5, cools silicon carbide substrates in the hydrogen gas stream;
Step 6, cools silicon carbide substrates in argon gas.
Further, described step one comprises the steps:
(1.1) deflection is chosen
4 °, crystal orientation or 8 ° of (deflections
4 °, crystal orientation or 8 ° refer to and depart from 4 ° or 8 ° toward 11-20 direction on 0001 directions) 4H silicon carbide substrates, be placed in the reaction chamber of silicon carbide CVD equipment;
(1.2) reaction chamber is vacuumized, until reaction chamber air pressure is lower than 1 × 10
-7mbar.
Further, described step 2 comprises the steps:
(2.1) open the hydrogen switch leading to reaction chamber, control hydrogen flowing quantity and increase to 60L/min gradually;
(2.2) open the gas of vacuum pump abstraction reaction room, keep reaction chamber air pressure at 100mbar (mbar=millibar=1bar*0.001=100000pa*0.001=100pa);
(2.3) tune up heating source power gradually, reaction chamber temperature is slowly raised.
Further, described step 3 comprises:
Open radio-frequency coil induction radio-frequency heater, increase the power of radio-frequency heater gradually, after reaction chamber temperature raises gradually to 1400 DEG C, keep the constant original position etching of carrying out 10 minutes of reaction chamber temperature; Or
Open radio-frequency coil induction radio-frequency heater, increase the power of radio-frequency heater gradually, after reaction chamber temperature raises gradually to 1400 DEG C, in reaction chamber, pass into the C that flow is 7mL/min
3h
8, keep the constant original position etching of carrying out 10 minutes of reaction chamber temperature.
Further, described step 4 comprises the steps:
(4.1) when reaction chamber temperature reaches 1580 DEG C-1600 DEG C, reaction chamber temperature and invariablenes pressure of liquid is kept;
(4.2) liquid trimethyl aluminium is positioned in bubbler is used as doped source, 10ml/min-15ml/min hydrogen is passed in bubbler, makes hydrogen carry trimethyl aluminium and pass in reaction chamber;
(4.3) C is opened
3h
8, SiH
4with trimethyl aluminium switch, flow is the C of 7mL/min
3h
8, flow is the SiH of 21mL/min
4be the trimethyl aluminium of 8.9mL/min with flow, growth p-type gradual doped silicon carbide film epitaxial layer 6min, at this therebetween, C
3h
8and SiH
4flow increases to 14mL/min and 42mL/min gradually by 7mL/min and 21mL/min respectively.
Further, described step 5 comprises the steps:
(5.1) after the gradual outer layer growth of p-type low-mix terminates, C is closed
3h
8, SiH
4switch with trimethyl aluminium, stops growing;
(5.2) arranging the hydrogen flowing quantity leading to reaction chamber is 20L/min, keeps reaction chamber air pressure to be 100mbar, makes length have the substrate of silicon carbide epitaxial layers to cool 25min in the hydrogen gas stream;
(5.3) reaction chamber air pressure is elevated to 700mbar, continues cooling in the hydrogen gas stream.
Further, described step 6 comprises the steps:
(6.1) when reaction chamber temperature is reduced to less than 700 DEG C, the hydrogen switch leading to reaction chamber is closed;
(6.2) reaction chamber is vacuumized, until air pressure is lower than 1 × 10
-7mbar;
(6.3) open argon gas switch, pass into reaction chamber the argon gas that flow is 12L/min, make length have the substrate of silicon carbide epitaxial layers to continue to cool 30min under ar gas environment;
(6.4) slowly improve reaction chamber air pressure to normal pressure, make substrate naturally cool to room temperature, take out silicon carbide epitaxial wafer.
The excellent effect that technical scheme provided by the invention has is:
1. the present invention adopts trimethyl aluminium as doped source, and Siliciumatom in carbofrax material effectively replaced by the aluminium nuclear power mixed, and forms substitutional impurity, relative to ion implantation technology, the heavy doping carbofrax material lattice perfection of preparation, defect is few, is conducive to improving device performance.
2. the present invention adopts the CVD epitaxial device of silicon carbide, carries out extension, controls longitudinal doping content by growth parameter(s), can grow the epitaxial film with gradual doping content at the carbonization substrate of silicon carbide substrates or existing epitaxial film, and the preparation technology of device is simplified.
Accompanying drawing explanation
Fig. 1 is the process flow sheet of base provided by the invention gradual doped silicon carbide thin film epitaxy preparation method.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
The following description and drawings illustrate specific embodiment of the invention scheme fully, to enable those skilled in the art to put into practice them.Other embodiments can comprise structure, logic, electric, process and other change.Embodiment only represents possible change.Unless explicitly requested, otherwise independent assembly and function are optional, and the order of operation can change.The part of some embodiments and feature can be included in or replace part and the feature of other embodiments.The scope of embodiment of the present invention comprises the gamut of claims, and all obtainable equivalent of claims.In this article, these embodiments of the present invention can be represented with term " invention " individually or always, this is only used to conveniently, and if in fact disclose the invention more than, be not the scope that automatically will limit this application is any single invention or inventive concept.
Referring to accompanying drawing 1, technical scheme of the present invention is described in further detail, below provides two kinds of embodiments.
Embodiment 1
Step one, is placed into silicon carbide substrates in the reaction chamber of silicon carbide CVD equipment.
(1.1) deflection is chosen
4 °, crystal orientation (deflection
4 °, crystal orientation refers to departs from 4 ° toward 11-20 direction on 0001 direction) 4H silicon carbide substrates, be placed in the reaction chamber of silicon carbide CVD equipment;
(1.2) reaction chamber is vacuumized, until reaction chamber air pressure is lower than 1 × 10
-7mbar.
Step 2, in the hydrogen gas stream reacting by heating room.
(2.1) open the hydrogen switch leading to reaction chamber, control hydrogen flowing quantity and increase to 60L/min gradually;
(2.2) open the gas of vacuum pump abstraction reaction room, keep reaction chamber air pressure at 100mbar;
(2.3) tune up heating source power gradually, reaction chamber temperature is slowly raised.
Step 3, carries out original position etching to substrate.
(3.1) when reaction chamber temperature reaches after 1400 DEG C, the constant original position etching of carrying out 10 minutes of reaction chamber temperature is kept.
Step 4, arranges growth conditions, starts growing silicon carbide epitaxial film.
(4.1) at reaction chamber temperature reaches 1580 DEG C, reaction chamber temperature and invariablenes pressure of liquid is kept;
(4.2) liquid trimethyl aluminium is positioned in bubbler is used as doped source, 10ml/min-15ml/min hydrogen is passed in bubbler, makes hydrogen carry trimethyl aluminium and pass in reaction chamber;
(4.3) C is opened
3h
8, SiH
4with trimethyl aluminium switch, flow is the C of 7mL/min
3h
8, flow is the SiH of 21mL/min
4be the trimethyl aluminium of 8.9mL/min with flow, the gradual epitaxial film 6min of growth p-type low-mix, at this therebetween, C
3h
8and SiH
4flow increases to 14mL/min and 42mL/min gradually by 7mL/min and 21mL/min respectively.
Step 5, cools substrate in the hydrogen gas stream.
(5.1) after the gradual outer layer growth of p-type low-mix terminates, C is closed
3h
8, SiH
4switch with trimethyl aluminium, stops growing;
(5.2) arranging the hydrogen flowing quantity leading to reaction chamber is 20L/min, keeps reaction chamber air pressure to be 100mbar, makes length have the substrate of silicon carbide epitaxial layers to cool 25min in the hydrogen gas stream;
(5.3) reaction chamber air pressure is elevated to 700mbar, continues cooling in the hydrogen gas stream.
Step 6, cools substrate in argon gas.
(6.1) when reaction chamber temperature is reduced to after 700 DEG C, the hydrogen switch leading to reaction chamber is closed;
(6.2) reaction chamber is vacuumized, until air pressure is lower than 1 × 10
-7mbar;
(6.3) open argon gas switch, pass into reaction chamber the argon gas that flow is 12L/min, make length have the substrate of silicon carbide epitaxial layers to continue to cool 30min under ar gas environment;
(6.4) slowly improve reaction chamber air pressure to normal pressure, make substrate naturally cool to room temperature, take out silicon carbide epitaxial wafer.
Embodiment 2
Step one, is placed into silicon carbide substrates in the reaction chamber of silicon carbide CVD equipment.
(1.1) deflection is chosen
8 °, crystal orientation (deflection
8 °, crystal orientation refers to departs from 8 ° toward 11-20 direction on 0001 direction) 4H silicon carbide substrates, be placed in the reaction chamber of silicon carbide CVD equipment;
(1.2) reaction chamber is vacuumized, until reaction chamber air pressure is lower than 1 × 10
-7mbar.
Step 2, in the hydrogen gas stream reacting by heating room.
(2.1) open the hydrogen switch leading to reaction chamber, control hydrogen flowing quantity and increase to 60L/min gradually;
(2.2) open the gas of vacuum pump abstraction reaction room, keep reaction chamber air pressure at 100mbar;
(2.3) tune up heating source power gradually, reaction chamber temperature is slowly raised.
Step 3, carries out original position etching to substrate.
(3.1) when reaction chamber temperature reaches after 1400 DEG C, in reaction chamber, the C that flow is 7mlL/min is passed into
3h
8, keep the constant original position etching of carrying out 10 minutes of reaction chamber temperature.
Step 4, arranges growth conditions, starts growing silicon carbide epitaxial film.
(4.1) at reaction chamber temperature reaches 1580 DEG C, reaction chamber temperature and invariablenes pressure of liquid is kept;
(4.2) liquid trimethyl aluminium is positioned in bubbler is used as doped source, 10ml/min-15ml/min hydrogen is passed in bubbler, makes hydrogen carry trimethyl aluminium and pass in reaction chamber;
(4.3) C is opened
3h
8, SiH
4with trimethyl aluminium switch, flow is the C of 7mL/min
3h
8, flow is the SiH of 21mL/min
4be the trimethyl aluminium of 8.9mL/min with flow, the gradual epitaxial film 6min of growth p-type low-mix, at this therebetween, C
3h
8and SiH
4flow increases to 14mL/min and 42mL/min gradually by 7mL/min and 21mL/min respectively.
Step 5, cools substrate in the hydrogen gas stream.
(5.1) after the gradual outer layer growth of p-type low-mix terminates, C is closed
3h
8, SiH
4switch with trimethyl aluminium, stops growing;
(5.2) arranging the hydrogen flowing quantity leading to reaction chamber is 20L/min, keeps reaction chamber air pressure to be 100mbar, makes length have the substrate of silicon carbide epitaxial layers to cool 25min in the hydrogen gas stream;
(5.3) reaction chamber air pressure is elevated to 700mbar, continues cooling in the hydrogen gas stream.
Step 6, cools substrate in argon gas.
(6.1) when reaction chamber temperature is reduced to after 700 DEG C, the hydrogen switch leading to reaction chamber is closed;
(6.2) reaction chamber is vacuumized, until air pressure is lower than 1 × 10
-7mbar;
(6.3) open argon gas switch, pass into reaction chamber the argon gas that flow is 12L/min, make length have the substrate of silicon carbide epitaxial layers to continue to cool 30min under ar gas environment;
(6.4) slowly improve reaction chamber air pressure to normal pressure, make substrate naturally cool to room temperature, take out silicon carbide epitaxial wafer.
The present invention adopts the CVD epitaxial device of silicon carbide, extension is carried out at the carbonization substrate of silicon carbide substrates or existing epitaxial film, longitudinal doping content is controlled by growth parameter(s), the epitaxial film with gradual doping content can be grown, the preparation technology of device is simplified, meets the requirement of the low-doped epitaxial film of preparation gradient.
Above embodiment is only in order to illustrate that technical scheme of the present invention is not intended to limit; although with reference to above-described embodiment to invention has been detailed description; those of ordinary skill in the field still can modify to the specific embodiment of the present invention or equivalent replacement; these do not depart from any amendment of spirit and scope of the invention or equivalent replacement, are all applying within the claims of the present invention awaited the reply.
Claims (7)
1. the gradual doped silicon carbide thin film epitaxy in a base preparation method, is characterized in that, described preparation method comprises the steps:
Step one, is placed into silicon carbide substrates in the reaction chamber of silicon carbide chemical vapor depsotition equipment, is evacuated by reaction chamber;
Step 2, in the hydrogen gas stream reacting by heating room;
Step 3, carries out original position etching to silicon carbide substrates;
Step 4, arranges growth conditions, starts growing silicon carbide epitaxial film;
Step 5, cools silicon carbide substrates in the hydrogen gas stream;
Step 6, cools silicon carbide substrates in argon gas.
2. carborundum films epitaxial preparation method as claimed in claim 1, it is characterized in that, described step one comprises the steps:
(1.1) deflection is chosen
the 4H silicon carbide substrates of 4 °, crystal orientation or 8 °, is placed in the reaction chamber of silicon carbide CVD equipment;
(1.2) reaction chamber is vacuumized, until reaction chamber air pressure is lower than 1 × 10
-7mbar.
3. carborundum films epitaxial preparation method as claimed in claim 1, it is characterized in that, described step 2 comprises the steps:
(2.1) open the hydrogen switch leading to reaction chamber, control hydrogen flowing quantity and increase to 60L/min gradually;
(2.2) open the gas of vacuum pump abstraction reaction room, keep reaction chamber air pressure at 100mbar;
(2.3) tune up heating source power gradually, reaction chamber temperature is slowly raised.
4. carborundum films epitaxial preparation method as claimed in claim 1, it is characterized in that, described step 3 comprises:
Open radio-frequency coil induction radio-frequency heater, increase the power of radio-frequency heater gradually, after reaction chamber temperature raises gradually to 1400 DEG C, keep the constant original position etching of carrying out 10 minutes of reaction chamber temperature; Or
Open radio-frequency coil induction radio-frequency heater, increase the power of radio-frequency heater gradually, after reaction chamber temperature raises gradually to 1400 DEG C, in reaction chamber, pass into the C that flow is 7mL/min
3h
8, keep the constant original position etching of carrying out 10 minutes of reaction chamber temperature.
5. carborundum films epitaxial preparation method as claimed in claim 1, it is characterized in that, described step 4 comprises the steps:
(4.1) when reaction chamber temperature reaches 1580 DEG C-1600 DEG C, reaction chamber temperature and invariablenes pressure of liquid is kept;
(4.2) liquid trimethyl aluminium is positioned in bubbler is used as doped source, the hydrogen of 10ml/min-15ml/min is passed in bubbler, makes hydrogen carry trimethyl aluminium and pass in reaction chamber;
(4.3) C is opened
3h
8, SiH
4with trimethyl aluminium switch, flow is the C of 7mL/min
3h
8, flow is the SiH of 21mL/min
4be the trimethyl aluminium of 8.9mL/min with flow, growth p-type gradual doped silicon carbide film epitaxial layer 6min, at this therebetween, C
3h
8and SiH
4flow increases to 14mL/min and 42mL/min gradually by 7mL/min and 21mL/min respectively.
6. carborundum films epitaxial preparation method as claimed in claim 1, it is characterized in that, described step 5 comprises the steps:
(5.1) after the gradual outer layer growth of p-type low-mix terminates, C is closed
3h
8, SiH
4switch with trimethyl aluminium, stops growing;
(5.2) arranging the hydrogen flowing quantity leading to reaction chamber is 20L/min, keeps reaction chamber air pressure to be 100mbar, makes length have the substrate of silicon carbide epitaxial layers to cool 25min in the hydrogen gas stream;
(5.3) reaction chamber air pressure is elevated to 700mbar, continues cooling in the hydrogen gas stream.
7. carborundum films epitaxial preparation method as claimed in claim 1, it is characterized in that, described step 6 comprises the steps:
(6.1) when reaction chamber temperature is reduced to less than 700 DEG C, the hydrogen switch leading to reaction chamber is closed;
(6.2) reaction chamber is vacuumized, until air pressure is lower than 1 × 10
-7mbar;
(6.3) open argon gas switch, pass into reaction chamber the argon gas that flow is 12L/min, make length have the substrate of silicon carbide epitaxial layers to continue to cool 30min under ar gas environment;
(6.4) slowly improve reaction chamber air pressure to normal pressure, make substrate naturally cool to room temperature, take out silicon carbide epitaxial wafer.
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102592976A (en) * | 2012-03-22 | 2012-07-18 | 西安电子科技大学 | P-type heavily-doped silicon carbide film extension preparation method |
CN104233470A (en) * | 2014-07-22 | 2014-12-24 | 西安电子科技大学 | Method for preparing P-type lightly-doped silicon carbide thin film epitaxy by controlling hydrogen flow |
CN104233219A (en) * | 2014-07-22 | 2014-12-24 | 西安电子科技大学 | Method for preparing P-type heavily-doped silicon carbide thin film epitaxial layer by controlling doping source flow |
CN104233462A (en) * | 2014-07-22 | 2014-12-24 | 西安电子科技大学 | Preparation method of P-type heavily doped silicon carbide film epitaxial layer for controlling growth pressure |
CN104233463A (en) * | 2014-07-22 | 2014-12-24 | 西安电子科技大学 | Epitaxy preparation method of P type gradient doped silicon carbide thin film |
CN104264219A (en) * | 2014-07-22 | 2015-01-07 | 西安电子科技大学 | Epitaxial preparation method for base region gradually doped silicon carbide film |
-
2015
- 2015-10-15 CN CN201510666085.1A patent/CN105220224A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102592976A (en) * | 2012-03-22 | 2012-07-18 | 西安电子科技大学 | P-type heavily-doped silicon carbide film extension preparation method |
CN104233470A (en) * | 2014-07-22 | 2014-12-24 | 西安电子科技大学 | Method for preparing P-type lightly-doped silicon carbide thin film epitaxy by controlling hydrogen flow |
CN104233219A (en) * | 2014-07-22 | 2014-12-24 | 西安电子科技大学 | Method for preparing P-type heavily-doped silicon carbide thin film epitaxial layer by controlling doping source flow |
CN104233462A (en) * | 2014-07-22 | 2014-12-24 | 西安电子科技大学 | Preparation method of P-type heavily doped silicon carbide film epitaxial layer for controlling growth pressure |
CN104233463A (en) * | 2014-07-22 | 2014-12-24 | 西安电子科技大学 | Epitaxy preparation method of P type gradient doped silicon carbide thin film |
CN104264219A (en) * | 2014-07-22 | 2015-01-07 | 西安电子科技大学 | Epitaxial preparation method for base region gradually doped silicon carbide film |
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