CN105215838B - The lapping device and its Ginding process of a kind of sapphire wafer - Google Patents
The lapping device and its Ginding process of a kind of sapphire wafer Download PDFInfo
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- CN105215838B CN105215838B CN201510722951.4A CN201510722951A CN105215838B CN 105215838 B CN105215838 B CN 105215838B CN 201510722951 A CN201510722951 A CN 201510722951A CN 105215838 B CN105215838 B CN 105215838B
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- grinding
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- grinder
- upper disc
- pump
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A kind of lapping device of sapphire wafer of the present invention, including size barrel, peristaltic pump and grinder, grinder are provided with slurry tank, and slurry is entered in grinder by peristaltic pump and slurry tank, a kind of Ginding process of sapphire wafer, comprised the following steps：1st, slurry is prepared：Multilevel hierarchy time throwing raw materials, 2, slurry flow control：Slurry launch it is accurate, 3, grinding lower disk surface flatness correction：Calipers, short rule plus amesdial are repeatedly measured and are modified, and 4, grinding card cloth powder, 5, chip twin grinding：Light pressure grinding is carried out first, it is a feature of the present invention that optimizing the raw material proportioning of slurry, the supply flow rate of slurry is more accurate, conveying evenly, before normal grinding, first carries out light pressure grinding, the problem of preventing chip from being ruptured in process of lapping of maximum possible, the fragment rate of chip is reduced, removal rate when improving the factor of merit of grinding, and grinding is stable, the problem of overground, removal rate is low will not be produced, efficiency is very fast.
Description
Technical field
The present invention relates to the manufacture field of sapphire substrate sheet, a kind of lapping device more particularly to sapphire wafer and
Its Ginding process.
Background technology
Sapphire wafer grinding is a very important technological process in sapphire wafer manufacture, and it determines sapphire
TTV and WARP after grinding, and surface roughness, existing technology in the application, are typically first stirred to slurry, then
Pour into size barrel, using mashing pump plus the mode of delivery pipe, slurry is transported in grinding card and supplied, after grinding
Slurry is come back in size barrel, recycling, and actual slurry agitation is often very uneven in grounds travel configuration process,
Opened without stirring completely, ground slurry suspension is poor, it is easy to cause wafer breakage and the overproof situation of roughness, these chippings
It can be entered with the chip particle of rupture in slurry, recycling is again fed in card, can cause whole bucket slurry can not be after
Continue and use and waste, the wafer surface of grinding scratches, and cut occurs, whole disk quick-fried disk can be produced when serious, chip total loss
Situation, it is not in place plus grinding technics process control, cause to grind factor of merit decline, cost increases.
The content of the invention
In view of the above-mentioned problems, the present invention proposes the lapping device and its Ginding process of a kind of sapphire wafer.
To solve above technical problem, technical scheme provided by the invention is:
A kind of lapping device of sapphire wafer, it is characterised in that described compacted including size barrel, peristaltic pump and grinder
Dynamic pump includes 2 pump heads, delivery pipe and pump-out pipe, and the pump head carries out conveying control to delivery pipe, the delivery pipe with pump out
Delivery hose is sheathed with pipe respectively and pumps out flexible pipe, the grinder is included under crossbeam, slurry tank, grinding upper disc and grinding
Disk, the crossbeam are provided with control cylinder and hose support, and the control cylinder is vertically arranged, including cylinder rod, the cylinder
Bar downwards, and is rotatablely connected by bearing and grinding upper disc, realizes motion and the level of grinding upper disc in the vertical direction
Rotation on direction, the slurry tank is fixedly installed on above grinding upper disc, between crossbeam and grinding upper disc, and with grinding
Upper disk is affixed, and slurry tank is in the channel form of annular, and opening up, its lower surface is evenly arranged with 36 leak, the grinding
Upper disk is provided with 36 pipe joints for running through grinding upper disc, and the pipe joint is uniformly arranged, and is connected by transparent hose and leak
Connect, connect slurry tank；
The size barrel is positioned over grinder side, and the peristaltic pump is positioned on the table top of grinder, and the conveying is soft
One end of pipe is sunken to slurry bottom of the barrel by way of weight of tying, it is described pump out flexible pipe one end it is removable by hose support
The formula of unloading is fixed on directly over slurry tank, and is uniformly distributed, and pumps out the outlet face slurry tank of flexible pipe；
Further, the peristaltic pump quantity is at least 2；
Further, the delivery hose and to pump out flexible pipe be a diameter of 8 millimeters of transparent hose；
Further, the grinder is provided with slurry outlet, and the slurry outlet is equipped with useless slurry charging basket.
A kind of Ginding process of sapphire wafer, it is characterised in that comprise the following steps：
(1) slurry is prepared：30L pure water is poured into size barrel, is placed on below pulp blender, starts slurry agitation
Machine, Agitator Impeller is stirred in pure water, set mixer rotating speed as 50rpm, then, take the carbonization that 10kg granularities are 240#
Boron, slowly pour into the water of agitation, until after boron carbide all pours into, then 45min is kept stirring for, finally it is slowly added to 1.5L
Suspension and 0.5L alkaline antirust agent, continue stir 45min after, obtain abradant slurry；
(2) slurry flow controls：One end of delivery hose is sunk to the slurry bottom of the barrel for being contained with slurry, flexible pipe will be pumped out
Remove, be placed in 500ml plastic measuring glass, start peristaltic pump, flow rate of slurry is monitored, pump head is adjusted, to slurry
Transporting velocity is controlled, until flow rate of slurry reaches 50 ± 5ml/min；
(3) grinding lower disk surface flatness is corrected：The lower card of grinding is measured using the mode of calipers plus amesdial, grinds lower wall
The intermediate settings in face are recessed 0~-15um, measure the lower card of grinding using the mode of short rule plus amesdial, grind lower card
Intermediate settings if there is error, do not reach requirement between 0~+10um of projection, then using the amendment wheel of grinding to upper lower burrs
Face is ground finishing, until meeting the requirements；
(4) card cloth powder is ground：The one end for pumping out flexible pipe is fixed on directly over slurry tank by hose support, and makes pump
Go out the outlet face slurry tank of flexible pipe, fall grinding upper disc, the slurry in size barrel passes through in peristaltic pump, slurry tank and grinding
Disk, it is sent on grinding lower wall, grinder, grinding upper disc and the grinding slow preaceleration of lower wall is started, until the rotating speed of grinding upper disc
Reach 1.7rpm, the rotating speed for grinding lower wall reaches 5rpm, and pressure 0.020kg/cm, 20 seconds used times, subsequent grinder is persistently transported
Turn 1min, carry out the operation of card cloth powder；
(5) chip twin grinding：After the completion of the operation of cloth powder, stop slurry conveying, lift grinding upper disc, be put into erratic star wheel,
Place a wafer into the hole of the erratic star wheel in grinder, and it is floating, confirm and ensure that every wafer all enters wandering star wheel bore
In hole, the thickness error that enters the station of whole disk chip is controlled within 5um, and the WARP that enters the station is controlled within 20um, is started grinder, is ground
Disk and slow preaceleration under grinding on mill, until the rotating speed of grinding upper disc reaches 5.3rpm, the rotating speed for grinding lower wall reaches
16rpm, pressure 0.049kg/cm, 60 seconds used times, grinder continuous running 1.5min, the light pressure grinding of first paragraph is carried out, with
Slowly accelerate again under grinding upper disc and grinding afterwards, until the rotating speed of grinding upper disc reaches 6.7rpm, grind the turn up of lower wall
To 20rpm, pressure 0.058kg/cm, 20 seconds used times, grinder continuous running 10min, the normal grinding of second segment is carried out, with
Removal rate during grinder grinding is calculated afterwards, according to removal rate and the follow-up milling time of remaining THICKNESS CALCULATION, and is set again
Determine the polish process time, untill being ground to standard thickness, complete grinding, the slurry after grinding is exhausted directly to useless slurry charging basket
In, it is not recycled.
The lapping device and its Ginding process of a kind of sapphire wafer of the present invention, have the characteristics that：
(1) present invention optimizes the raw material proportioning of slurry, and grounds travel and the order and mixing time of suspension are poured into,
It can ensure that grounds travel is sufficiently stirred, ground slurry suspension effect is good, and uniformity is consistent, reduces wafer breakage and roughness
Overproof situation；
(2) by way of new feedway and flow measurement, slurry can be supplied with accurate flow, slurry
Material consumption has obtained effective control, will not produce the situation of waste；
(3) by the slurry tank above hanging wall in grinder, equally distributed 36 pipe joints are coordinated, can be slurry very
The uniform relevant position for being transported to grinding card, ensure that the uniformity of slurry conveying, while ensure that the quality of grinding；
(4) substitute the mode of traditional mashing pump, although slurry does not recycle, wriggle by using peristaltic pump
Pump conveying slurry has more uniformity, also uses less flow control, and the consumption of slurry does not increase, material cost
Do not rise；
(5) substitute the mode of traditional mashing pump by using peristaltic pump, make slurry not recycled, collapsed with chip
The slurry of side and rupture particle will not be circulated again into card, greatly reduce cut and fragmentation, the generation of quick-fried disk accident,
Reduce abnormal loss；
(6) by control single-deck wafer thickness uniformity and setting pressure and rotating speed process meanses, plus control and
The concavo-convex parameter of finishing grinding card, chip TTV out can reach within 2um, and WARP can reach within 2.5, rough surface
Spend that Ra is stable between 0.9-1.1, be easily reached the requirement of chip back surface roughness Ra value in industry in 0.8-1.2, quality obtains
To effective lifting；
(7) after film releasing, before grinding, floating operation is carried out in advance, and in grinding, the light pressure for carrying out first paragraph first is ground
Mill, the problem of preventing chip to be ruptured in process of lapping of maximum possible, reduces the fragment rate of chip, improves grinding
The factor of merit；
(8) removal rate of grinding is stable, will not produce the problem of overground or removal rate is low, and efficiency comparison is fast, can reach
1.8um/min removal rate, improves device efficiency.
Brief description of the drawings
Fig. 1 feedway schematic diagrames.
Fig. 2 slurry tank schematic diagrames.
Fig. 3 Ginding process schematic diagrames.
Embodiment
A kind of lapping device of sapphire wafer as depicted, it is characterised in that including size barrel 1, peristaltic pump 2 and grind
Grinding machine 3, the peristaltic pump 2 include 2 pump heads 4, delivery pipe 5 and pump-out pipe 6, and the pump head 4 carries out conveying control to delivery pipe 5
System, delivery hose 7 is sheathed with the delivery pipe 5 and pump-out pipe 6 respectively and pumps out flexible pipe 8, the grinder 3 include crossbeam 9,
Slurry tank 10, grinding upper disc 11 and grinding lower wall 19, the crossbeam 9 are provided with control cylinder 12 and hose support 13, the control
Cylinder 12 processed is vertically arranged, including cylinder rod 14, and the cylinder rod 14 downwards, and is rotated by bearing and grinding upper disc 11
Connection, realizes the rotation in the motion and horizontal direction of the in the vertical direction of grinding upper disc 11, the slurry tank 10 is fixedly installed
Above grinding upper disc 11, between crossbeam 9 and grinding upper disc 11, and it is affixed with grinding upper disc 11, slurry tank 10 is in annulus
The channel form of shape, opening up, its lower surface is evenly arranged with 36 leak 15, and the grinding upper disc 11 runs through provided with 36
The pipe joint 16 of grinding upper disc 11, the pipe joint 16 are uniformly arranged, and are connected by transparent hose with leak 15, connect slurry
Groove 10；
The size barrel 1 is positioned over the side of grinder 3, and the peristaltic pump 2 is positioned on the table top of grinder 3, described defeated
One end of flexible pipe 7 is sent by way of weight of tying, is sunken to the bottom of size barrel 1, described one end for pumping out flexible pipe 8 passes through flexible pipe branch
Frame 13 is detachably secured to directly over slurry tank 10, and is uniformly distributed, and pumps out the outlet face slurry tank 10 of flexible pipe 8；
Wherein, the quantity of peristaltic pump 2 is at least 2, and the delivery hose 7 is a diameter of 8 millimeters with flexible pipe 8 is pumped out
Transparent hose, the grinder 3 are provided with slurry outlet 17, and the slurry outlet 17 is equipped with useless slurry charging basket 18.
The Ginding process of above-mentioned a kind of sapphire wafer, it is characterised in that comprise the following steps：
(1) slurry is prepared：30L pure water is poured into size barrel, is placed on below pulp blender, starts slurry agitation
Machine, Agitator Impeller is stirred in pure water, set mixer rotating speed as 50rpm, then, take the carbonization that 10kg granularities are 240#
Boron, slowly pour into the water of agitation, until after boron carbide all pours into, then 45min is kept stirring for, finally it is slowly added to 1.5L
Suspension and 0.5L alkaline antirust agent, continue stir 45min after, obtain abradant slurry；
(2) slurry flow controls：One end of delivery hose is sunk to the slurry bottom of the barrel for being contained with slurry, flexible pipe will be pumped out
Remove, be placed in 500ml plastic measuring glass, start peristaltic pump, flow rate of slurry is monitored, pump head is adjusted, to slurry
Transporting velocity is controlled, until flow rate of slurry reaches 50 ± 5ml/min；
(3) grinding lower disk surface flatness is corrected：The lower card of grinding is measured using the mode of calipers plus amesdial, grinds lower wall
The intermediate settings in face are recessed 0~-15um, measure the lower card of grinding using the mode of short rule plus amesdial, grind lower card
Intermediate settings if there is error, do not reach requirement between 0~+10um of projection, then using the amendment wheel of grinding to upper lower burrs
Face is ground finishing, until meeting the requirements；
(4) card cloth powder is ground：The one end for pumping out flexible pipe is fixed on directly over slurry tank by hose support, and makes pump
Go out the outlet face slurry tank of flexible pipe, fall grinding upper disc, the slurry in size barrel passes through in peristaltic pump, slurry tank and grinding
Disk, it is sent on grinding lower wall, grinder, grinding upper disc and the grinding slow preaceleration of lower wall is started, until the rotating speed of grinding upper disc
Reach 1.7rpm, the rotating speed for grinding lower wall reaches 5rpm, and pressure 0.020kg/cm, 20 seconds used times, subsequent grinder is persistently transported
Turn 1min, carry out the operation of card cloth powder；
(5) chip twin grinding：After the completion of the operation of cloth powder, stop slurry conveying, lift grinding upper disc, be put into erratic star wheel,
Place a wafer into the hole of the erratic star wheel in grinder, and it is floating, confirm and ensure that every wafer all enters wandering star wheel bore
In hole, the thickness error that enters the station of whole disk chip is controlled within 5um, and the WARP that enters the station is controlled within 20um, is started grinder, is ground
Disk and slow preaceleration under grinding on mill, until the rotating speed of grinding upper disc reaches 5.3rpm, the rotating speed for grinding lower wall reaches
16rpm, pressure 0.049kg/cm, 60 seconds used times, grinder continuous running 1.5min, the light pressure grinding of first paragraph is carried out, with
Slowly accelerate again under grinding upper disc and grinding afterwards, until the rotating speed of grinding upper disc reaches 6.7rpm, grind the turn up of lower wall
To 20rpm, pressure 0.058kg/cm, 20 seconds used times, grinder continuous running 10min, the normal grinding of second segment is carried out, with
Removal rate during grinder grinding is calculated afterwards, according to removal rate and the follow-up milling time of remaining THICKNESS CALCULATION, and is set again
Determine the polish process time, untill being ground to standard thickness, complete grinding, the slurry after grinding is exhausted directly to useless slurry charging basket
In, it is not recycled.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto,
Any one skilled in the art the invention discloses technical scope in, the change or replacement that can readily occur in,
It should all cover within the scope of the present invention.Therefore, protection scope of the present invention should be with the protection domain of claims
It is defined.
Claims (2)
- A kind of 1. lapping device of sapphire wafer, it is characterised in that including size barrel, peristaltic pump and grinder, the wriggling Pump includes 2 pump heads, delivery pipe and pump-out pipe, and the pump head carries out conveying control, the delivery pipe and pump-out pipe to delivery pipe Upper to be sheathed with delivery hose respectively and pump out flexible pipe, the grinder includes crossbeam, slurry tank, grinding upper disc and grinding lower wall, The crossbeam is provided with control cylinder and hose support, and the control cylinder is vertically arranged, including cylinder rod, the cylinder rod erect Directly down, and by bearing and grinding upper disc it is rotatablely connected, realizes motion and the horizontal direction of grinding upper disc in the vertical direction On rotation, the slurry tank is fixedly installed on above grinding upper disc, between crossbeam and grinding upper disc, and and grinding upper disc Affixed, slurry tank is in the channel form of annular, and opening up, its lower surface is evenly arranged with 36 leak, the grinding upper disc 36 pipe joints for running through grinding upper disc are provided with, the pipe joint is uniformly arranged, and is connected by transparent hose with leak, even Logical slurry tank；The size barrel is positioned over grinder side, and the peristaltic pump is positioned on the table top of grinder, the delivery hose One end is sunken to slurry bottom of the barrel by way of weight of tying, it is described pump out flexible pipe one end it is detachable by hose support It is fixed on directly over slurry tank, and is uniformly distributed, pumps out the outlet face slurry tank of flexible pipe；The peristaltic pump quantity is at least 2 Platform；The delivery hose and to pump out flexible pipe be a diameter of 8 millimeters of transparent hose；The grinder is provided with slurry outlet, The slurry outlet is equipped with useless slurry charging basket.
- 2. a kind of Ginding process of sapphire wafer, it is characterised in that comprise the following steps：(1) slurry is prepared：30L pure water is poured into size barrel, is placed on below pulp blender, starts pulp blender, is made Agitator Impeller stirs in pure water, sets mixer rotating speed as 50rpm, then, takes the boron carbide that 10kg granularities are 240#, delays In the slow water for pouring into agitation, until after boron carbide all pours into, then 45min is kept stirring for, finally it is slowly added to the outstanding of 1.5L The alkaline antirust agent of supernatant liquid and 0.5L, continue after stirring 45min, obtain abradant slurry；(2) slurry flow controls：One end of delivery hose is sunk to the slurry bottom of the barrel for being contained with slurry, flexible pipe will be pumped out and taken Under, it is placed in 500ml plastic measuring glass, starts peristaltic pump, flow rate of slurry is monitored, adjusts pump head, it is defeated to slurry Speed is sent to be controlled, until flow rate of slurry reaches 50 ± 5ml/min；(3) grinding lower disk surface flatness is corrected：The lower card of grinding is measured using the mode of calipers plus amesdial, grinds lower card Intermediate settings are recessed 0~-15um, measure the lower card of grinding using the mode of short rule plus amesdial, grind the centre of lower card It is set as between 0~+10um of projection, if there is error, does not reach requirement, then upper and lower card is entered using the amendment wheel of grinding Row cutting down, until meeting the requirements；(4) card cloth powder is ground：The one end for pumping out flexible pipe is fixed on directly over slurry tank by hose support, and makes to pump out soft The outlet face slurry tank of pipe, falls grinding upper disc, and the slurry in size barrel is sent by peristaltic pump, slurry tank and grinding upper disc Up on grinding lower wall, grinder, grinding upper disc and the grinding slow preaceleration of lower wall are started, until the rotating speed of grinding upper disc reaches 1.7rpm, the rotating speed for grinding lower wall reach 5rpm, pressure 0.020kg/cm, 20 seconds used times, subsequent grinder continuous running 1min, carry out the operation of card cloth powder；(5) chip twin grinding：After the completion of the operation of cloth powder, stop slurry conveying, lift grinding upper disc, erratic star wheel is put into, by crystalline substance Piece is put into the hole of the erratic star wheel in grinder, and floating, is confirmed and is ensured that every wafer is all entered in erratic star wheel hole, The thickness error that enters the station of whole disk chip is controlled within 5um, and the WARP that enters the station is controlled within 20um, starts grinder, in grinding Disk and the grinding slow preaceleration of lower wall, until the rotating speed of grinding upper disc reaches 5.3rpm, the rotating speed for grinding lower wall reaches 16rpm, Pressure is 0.049kg/cm, 60 seconds used times, grinder continuous running 1.5min, carries out the light pressure grinding of first paragraph, then grinding Upper disk and grinding lower wall slowly accelerate again, and until the rotating speed of grinding upper disc reaches 6.7rpm, the rotating speed for grinding lower wall reaches 20rpm, pressure 0.058kg/cm, 20 seconds used times, grinder continuous running 10min, the normal grinding of second segment is carried out, then Removal rate during grinder grinding is calculated, according to removal rate and the follow-up milling time of remaining THICKNESS CALCULATION, and is set again The polish process time, untill being ground to standard thickness, grinding is completed, the slurry after grinding is exhausted directly in useless slurry charging basket, It is not recycled.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510722951.4A CN105215838B (en) | 2015-10-29 | 2015-10-29 | The lapping device and its Ginding process of a kind of sapphire wafer |
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| CN201510722951.4A CN105215838B (en) | 2015-10-29 | 2015-10-29 | The lapping device and its Ginding process of a kind of sapphire wafer |
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| CN105215838B true CN105215838B (en) | 2017-11-28 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107932204B (en) * | 2016-04-27 | 2019-05-21 | 马鞍山市金德瑞冶金机械配件制造有限公司 | A kind of method of planer-type grinding device production high-speed steel tool |
| CN108393784A (en) * | 2017-02-06 | 2018-08-14 | 张燕平 | A kind of mobile phone shell grinding apparatus |
| CN107309784B (en) * | 2017-09-03 | 2019-08-02 | 湖北天宝光电科技有限公司 | A kind of two-sided fine grinding technology of sapphire cover board |
| JP6935635B2 (en) * | 2017-09-06 | 2021-09-15 | スピードファム株式会社 | Carrier for holding objects to be polished for double-sided polishing equipment |
| JP2019136837A (en) * | 2018-02-14 | 2019-08-22 | 信越半導体株式会社 | Double-sided polishing method |
| JP7116371B2 (en) * | 2019-04-01 | 2022-08-10 | 株式会社村田製作所 | Abrasive supply device, polishing device and abrasive supply method |
| CN110484207B (en) * | 2019-09-20 | 2020-05-29 | 江苏京晶光电科技有限公司 | Preparation method of sapphire wafer fine grinding fluid |
| CN112264928A (en) * | 2020-10-23 | 2021-01-26 | 长江存储科技有限责任公司 | Chemical mechanical polishing equipment |
| CN113601397B (en) * | 2021-10-08 | 2022-02-15 | 常州市名流干燥设备有限公司 | Polishing paste conveying device for semiconductor wafer drying |
| CN117359435B (en) * | 2023-12-05 | 2024-03-05 | 福建荣德光电科技有限公司 | Numerical control plane precision milling and grinding machine for optical lens processing |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2000326209A (en) * | 1999-05-20 | 2000-11-28 | Nec Corp | Surface grinding device |
| JP4636787B2 (en) * | 2003-10-22 | 2011-02-23 | 株式会社ディスコ | Fixed abrasive polishing pad, polishing equipment |
| KR101715024B1 (en) * | 2006-12-28 | 2017-03-10 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | A sapphire substrate |
| CN101716745B (en) * | 2009-11-09 | 2011-06-29 | 清华大学 | Device and method for polishing sapphire substrate material by ultrasound assisted chemical machinery |
| CN205148037U (en) * | 2015-10-29 | 2016-04-13 | 江苏吉星新材料有限公司 | Sapphire wafer's grinder |
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