CN105215556A - The new technology that laser cuts film is carried out to the various films that crystal column surface pastes - Google Patents
The new technology that laser cuts film is carried out to the various films that crystal column surface pastes Download PDFInfo
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- CN105215556A CN105215556A CN201510623879.XA CN201510623879A CN105215556A CN 105215556 A CN105215556 A CN 105215556A CN 201510623879 A CN201510623879 A CN 201510623879A CN 105215556 A CN105215556 A CN 105215556A
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- Prior art keywords
- film
- laser
- column surface
- cutting
- crystal column
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
Abstract
The invention provides a kind of various films that crystal column surface is pasted and carry out the new technology that laser cuts film, in the process that the film using laser beam to paste crystal column surface cuts, because without any the EDGE CONTACT of hardware material and wafer, thus situations such as causing damage to the edge of wafer, burst apart effectively can be avoided; At the uniform velocity move at laser beam and constantly cut in the process of film, because be utilize the heat of laser beam all to be gasified by the film in its focus point hot spot and cut air exhausting device in membranous system by this laser the material of gasification to be discharged, therefore there will not be the problems such as the overlap of residual lower film in the scope of laser beam cutting film or burr; Required cutting profile and cutting track are edited and set to this laser film slitting technique by cutting track edit cell and special-purpose software thereof, can meet the split requirement of client for various film.
Description
Technical field
The present invention relates to the manufacturing field of semiconductor integrated circuit, electronic devices and components, various sensor and various MEMS etc., particularly a kind of new technology of cutting for the various films pasted crystal column surface and new technology.
Background technology
In the manufacturing process of semiconductor integrated circuit, electronic devices and components, various sensor and various MEMS etc., wherein one processing technology is pad pasting on wafer (also referred to as wafer) surface or the back side.The special laminator of the many employings of film coating process carries out pad pasting, the technical process of its laminator is as follows: the film (including but not limited to cut blue film, cutting tunica albuginea, thinning diaphragm, UV film, DAF conducting film etc., thickness between 0.02mm to 1.5mm) first a section surface glue-line with stickiness pulls out from entire volume film, is unsettledly placed on wafer; Above film, roll pressure downwards with rubber roller, extrude the air driven out of between film and wafer and film is pasted onto crystal column surface, the width dimensions of general film is a bit larger tham brilliant diameter of a circle thus wafer can be covered comprehensively; Film cuts off by the edge then along wafer, then is uncovered by the film beyond crystal round fringes and take away, finally taken off from laminator by wafer.
In the prior art, be mostly to adopt manipulator to drive sharp blade to carry out the circle cutting of tour along crystal round fringes to the film that crystal column surface pastes, film is cut off.As Chinese invention patent (patent No.: 201010516841.X) discloses a kind of cutting membrane knife tool, this cutting membrane knife tool (comprising blade) is characterized in that, described blade angle is adjustably installed on support, also comprise the first elasticity reset device, this elasticity reset device can produce elastic deformation force along with the change of blade angle, and this elastic deformation force can make blade return back to the unchanged state of angle.But adopt blade to there is following drawback along crystal round fringes cutting film always:
1) blade metal blade and EDGE CONTACT of wafer, sometimes blade in cutting thin-film process also can gnaw crystal round fringes, there is the possibility causing crystal round fringes damage, chipping, crackle, particularly after wafer have passed through multiple tracks processes, at pad pasting and crystal round fringes has had crackle or a small gap before cutting film, then blade is cut film and must be caused the more macrolesion of crystal round fringes, even break;
2) blade keeps blade to carry out along crystal round fringes all the time to being difficult in the cutting process of film, sometimes blade can depart from the edge of wafer, thus the problem such as the overlap (somewhere has more and has some) of film, burr (fine filaments still connected together with cutting rear film) can be left at the edge of wafer, these overlap and burrs etc. can affect next step wafer processing technology and crudy;
3) want certain size (including but not limited to several millimeters) in indentation crystal round fringes when cutting the film that crystal column surface pastes for some or exceed technology and the technological requirement of the outer certain size (including but not limited to several millimeters) of Waffer edge, then blade is cut film and cannot be realized at all;
4) wafer of 8 inches, 12 inches and 16 inches has a V-Notch(V type breach to be positioned on edge), the width dimensions of this v-notch is between 2.00mm to 3.00mm, in scope narrow like this, be difficult to curve incision during blade cuts film in it, cause the residual of in v-notch film;
5) for the edge of some wafers (including but not limited to the wafer of the glass material, crystal material, ceramic material etc. manufacturing various sensor) without chamfered in 90 degree of corners, rough state, because blade can gnaw the sharp keen edge of wafer and rapid rust frequently during blade cuts film, cannot automatically go on smoothly at all, have to take manually bit by bit to carry out film cutting along Waffer edge with scalpel, its cutting process is wasted time and energy, staff cannot be stablized for a long time, be difficult to ensure cut quality.Be low-angle acute angle, very sharp ultra-thin wafers for those through thinning back edge, blade cuts just difficult for more.
6) for including but not limited in the film cutting of random two-dimensional polygon or random two-dimensional non-closed cutting track, because blade cannot move freely along sharp-pointed low-angle sharp edge during employing blade cuts film, so just cannot complete film cutting at all.
Summary of the invention
The defect of existing film cutting technique and weakness in view of the above, the object of the present invention is to provide a kind of crystal round fringes that can not to damage, film overlap or burr can not be produced, the various films that can paste crystal column surface carry out arbitrary shape and arbitrary dimension, not only can meet along crystal round fringes but also can meet certain size (including but not limited to several millimeters) in indentation crystal round fringes or exceed the film cutting new technology of the outer certain size (including but not limited to several millimeters) of Waffer edge, it comprises the steps: that first arranging a laser cuts membranous system, described laser is cut membranous system and is comprised laser instrument, high-speed vibrating mirror scanner, focus lens group, laser instrument in this system sends beam of laser vertically downward along Z axis, its laser energy can adjust according to the film material that will cut and thickness, the high-speed vibrating mirror scanner regulated and controled in this system makes laser beam irradiation to the position needing to cut film, in the film that the focus lens group adjusted again in this system makes laser beam focus stick at crystal column surface, then according to cutting track requirement, the laser beam of this system at the uniform velocity mobile cuts the film that crystal column surface sticks.
Preferably, described laser cuts the laser instrument of membranous system, high-speed vibrating mirror scanner is connected with computer control system with focus lens group, described computer control system, by regulation and control described laser instrument, high-speed vibrating mirror scanner and focus lens group, realizes laser beam at the uniform velocity moving in high-speed vibrating mirror scanner and focus lens group visual range.
Preferably, laser cutting track edit cell is installed in described computer control system, described laser cutting track edit cell is used for editing the cutting track of laser beam and setting, described computer control system can regulate and control described laser and cut laser instrument, high-speed vibrating mirror scanner and focus lens group in membranous system, and the cutting track that described laser beam is set by pre-edit moves.
Preferably, described film thickness includes but not limited between 0.02mm to 1.5mm.
Preferably, described film includes but not limited to be applied to the blue film of the cutting manufacturing integrated circuit or semiconductor components and devices on wafer, cutting tunica albuginea, thinning diaphragm, UV film or DAF conducting film etc.
Preferably, described laser is cut the membranous system laser beam spot diameter focused on film and is less than but is not limited to 0.2mm.
Preferably, described laser cutting track edit cell and special-purpose software thereof both can carry out the close-shaped editor of random two-dimensional and setting to the cutting track that laser cuts film, also can carry out editor and the setting of random two-dimensional non-closed cutting track.
Preferably, described laser is cut the diameter dimension that membrane process is applied to wafer and is included but not limited to 4 inches, 5 inches, 6 inches, 8 inches, 12 inches, 16 inches, cut except film except the various films pasted crystal column surface carry out laser, can also for including but not limited to that the surperficial various films pasted of random two-dimensional polygon flakes carry out laser and cut film.
Preferably, namely described laser film slitting technique can be used for carrying out film cutting along the edge of wafer or the edge of random two-dimensional polygon flakes, also can be used in indentation crystal round fringes or in random two-dimensional polygon flakes edge certain size (including but not limited to several millimeters) or outside exceeding the outer or random two-dimensional polygon flakes edge of Waffer edge certain size (including but not limited to several millimeters) carry out film cutting.
As mentioned above, the various films pasted crystal column surface of the present invention carry out the new technology that laser cuts film and have following beneficial effect: in the process that the film using laser beam to paste crystal column surface cuts, because without any the EDGE CONTACT of hardware material and wafer, thus situations such as causing damage to the edge of wafer, burst apart effectively can be avoided; At the uniform velocity move at laser beam and constantly cut in the process of film, because be utilize the heat of laser beam all to be gasified by the film in its focus point hot spot and cut air exhausting device in membranous system by this laser the material of gasification is discharged, therefore there will not be laser cutting groove scope (cutting groove width is equal to the diameter of laser beam focus points hot spot substantially) in residual descend the problem such as the overlap of film or burr; Required cutting profile or cutting track are edited and set to laser film slitting technique by cutting track edit cell and special-purpose software, the laser beam that the computer control system of then being cut in membranous system by this laser regulates and controls to be produced by laser instrument, high-speed vibrating mirror scanner and focus lens group carries out surface trimming by cutting track requirement, can meet the split requirement of client to various film; This laser film slitting technique cuts the film that crystal column surface sticks under contactless state, so for those edges without chamfered in 90 degree of corners, rough wafer, even for those through thinning back edge be low-angle acute angle, very sharp ultra-thin wafers can complete the cutting of various film along crystal round fringes in the same old way smoothly.
Accompanying drawing explanation
Fig. 1 is the structural representation that embodiment of the present invention laser cuts membranous system.
1, carbon dioxide laser 2, high-speed vibrating mirror scanner 21, X-axis refraction galvanometer and drive motors 22 thereof, Y-axis refraction galvanometer and drive motors 3, focus lens group 4, wafer (also referred to as wafer).
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this description can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by detailed description of the invention different in addition, and the every details in this description also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, so only show the assembly relevant with the present invention in diagram but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and the layout of its each assembly, kenel and be interconnected also may be more complicated.
The invention discloses a kind of various films that crystal column surface is pasted and carry out the new technology that laser cuts film; the film that this technique is mainly used in sticking on crystal column surface carries out laser cutting; the film sticking on crystal column surface can be applied to the one in the blue film of the cutting manufacturing integrated circuit or semiconductor components and devices on wafer, cutting tunica albuginea, thinning diaphragm, UV film or DAF conducting film etc.; but be not limited only to above several film; the thickness of film is generally between 0.02mm to 1.5mm, and this film is pasted on the wafer surface by laminator.When carrying out pad pasting, bench top module auto-extending, is placed on workbench by artificial or manipulator by wafer to be processed; Automatically detect wafer particular location on the table (precision can reach +/-0.01mm or higher) by vision-based detection navigation system (employing three-point fix), and export data and cut in film control system to laser; Coating system runs automatically, carries out the putting film, membrane extended flat, paste of entire volume film, rubber roller rolls the actions such as pressure, complete and stick and the process cemented at the whole film of crystal column surface.
When cutting these films subsequently, first a laser is set and cuts membranous system, as shown in Figure 1, this laser is cut membranous system and is made up of carbon dioxide laser 1, high-speed vibrating mirror scanner 2 and focus lens group 3, and high-speed vibrating mirror scanner 2 comprises X-axis refraction galvanometer and drive motors 21 and Y-axis thereof and reflects galvanometer and drive motors 22 two parts thereof.When carrying out film cutting, first by carbon dioxide laser 1 output laser, secondly regulation and control high-speed vibrating mirror scanner 2 makes laser beam be positioned at position film needing cutting, finally adjust in film that focus lens group 3 makes laser beam focus stick at crystal column surface, the diameter of its laser beam spot is less than 0.2mm, energy can adjust according to the film material that will cut and thickness, then according to the requirement of client to cutting track, the laser beam that mobile laser is cut in membranous system cuts the film that wafer 4 surface sticks.
Laser cuts the wafer position data accurately that membranous system can be come according to vision-based detection Oriented Systems Transport, laser instrument, high-speed vibrating mirror scanner and focus lens group is adjusted by its computer control system, the laser beam of formation is positioned at and focuses on film that crystal column surface sticks, the film that the movement locus of laser beam and crystal column surface are pasted needs the trajectory height carrying out cutting to coincide (precision of coincideing can reach +/-0.02mm or higher).
Laser beam focus is needing in cut film, focusing center's point can be set in the position (being called for short: deeply focus on) near crystal column surface bottom film, also the position (being called for short: shallow focusing) entering film surface a little can be set in, concrete focal position is determined by technological parameters such as film material, film thickness, the requirements of film cutting technique, and its laser energy can adjust according to the film material that will cut and thickness.
The movement locus (namely laser cutting track) of laser beam is is constantly regulated and controled by computer control system and drives the X-axis refraction galvanometer drive motors in high-speed vibrating mirror scanner and Y-axis refraction galvanometer drive motors, the deflection angle making X-axis reflect galvanometer and Y-axis refraction galvanometer constantly changes according to the requirement of laser cutting track, thus make through X-axis refraction galvanometer and Y-axis refraction galvanometer laser beam refraction arrive afterwards need to carry out cutting, crystal column surface stick the position of film.In the lasting regulation and control of computer control system with under driving, laser beam continues at the uniform velocity to move according to the cutting speed required for film cutting technique, finally to complete crystal column surface stick the cutting of film.
This laser cutting system also comprises a computer, laser cutting track edit cell and special-purpose software thereof are installed in this computer control system, laser cutting track edit cell is used for editing the cutting track of laser beam and setting, computer control system can regulate and control described laser and cut laser instrument in membranous system, high-speed vibrating mirror scanner and focus lens group, described laser beam is set in advance according to laser cutting track edit cell, cutting profile required for client and cutting track at the uniform velocity move voluntarily, complete the cutting to the film that crystal column surface pastes.
By tearing residual film module and receiving residual film module coordinated operation in laminator after film has cut, the residual film outside crystal round fringes has automatically been uncovered and has automatically been gathered into be rolled onto in film collecting roller; Last bench top module auto-extending, is taken away by artificial or manipulator and posts film and the product wafer completing film cutting;
This laser cuts the new technology of film, in the process using the film that pastes crystal column surface of laser beam to cut, because without any the EDGE CONTACT of hardware material and wafer, thus effectively can avoid situations such as causing damage to the edge of wafer, burst apart; At the uniform velocity move at laser beam and constantly cut in the process of film, because be utilize the heat of laser beam all to be gasified by the film in its focus point hot spot and cut air exhausting device in membranous system by this laser the material of gasification is discharged, therefore there will not be cutting groove scope (cutting groove width is equal to the diameter of laser beam focus points hot spot substantially) in residual descend the problem such as the overlap of film or burr; Required cutting profile and cutting track are edited and set to laser film slitting technique by cutting track edit cell and special-purpose software thereof, the computer control system of then being cut in membranous system by this laser regulates and controls and the at the uniform velocity mobile laser beam produced by laser instrument, high-speed vibrating mirror scanner and focus lens group, make it carry out surface trimming according to cutting track requirement to film, the split requirement of client to various film can be met; It is cut the film that crystal column surface sticks under contactless state that this laser cuts membrane process, so for those edges without chamfered in 90 degree of corners, rough wafer, even for those through thinning back edge be low-angle acute angle, very sharp ultra-thin wafers can complete the cutting of various film along crystal round fringes in the same old way smoothly; This laser is cut membrane process and namely be can be used for carrying out film cutting along the edge of wafer or the edge of random two-dimensional polygon flakes, also can be used in indentation crystal round fringes or in random two-dimensional polygon flakes edge certain size (including but not limited to several millimeters) or outside exceeding the outer or random two-dimensional polygon flakes edge of Waffer edge certain size (including but not limited to several millimeters) carry out film cutting.So the present invention effectively overcomes the various shortcoming in the technology and technique that film that is existing, that paste crystal column surface cuts, thus has the value of height commercialization and industrialization.
Above-described embodiment only describes principle of the present invention and effect thereof illustratively, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim people of the present invention.
Claims (9)
1. the various films pasted crystal column surface carry out the new technology that laser cuts film, it is characterized in that, the film pasted this crystal column surface carries out the technique that laser cuts film and comprises the steps: that first arranging a laser cuts membranous system, described laser is cut membranous system and is comprised laser instrument, high-speed vibrating mirror scanner, focus lens group, the laser instrument of this system sends beam of laser vertically downward along Z axis, its laser energy can adjust according to the film material that will cut and thickness, the high-speed vibrating mirror scanner regulated and controled in this system makes laser beam irradiation arrive the position needing cutting, in the film that the focus lens group adjusted again in this system makes laser beam focus stick at crystal column surface, then according to cutting track requirement, the laser beam of this system at the uniform velocity mobile cuts the film that crystal column surface sticks.
2. the various films pasted crystal column surface according to claim 1 carry out the new technology that laser cuts film, it is characterized in that: described laser cuts the laser instrument of membranous system, high-speed vibrating mirror scanner is connected with computer control system with focus lens group, described computer control system, by regulation and control described laser instrument, high-speed vibrating mirror scanner and focus lens group, realizes laser beam and at the uniform velocity moves in the visual range of high-speed vibrating mirror scanner and focus lens group.
3. the various films pasted crystal column surface according to claim 2 carry out the new technology that laser cuts film, it is characterized in that: laser cutting track edit cell is installed in described computer control system, described laser cutting track edit cell is used for editing the cutting track of laser beam and setting, described computer control system can regulate and control described laser and cut laser instrument, high-speed vibrating mirror scanner and focus lens group in membranous system, and the cutting track that described laser beam is set by pre-edit moves.
4. the various films pasted crystal column surface according to claim 1 carry out the new technology that laser cuts film, it is characterized in that: described film comprises and is applied to the blue film of the cutting manufacturing integrated circuit or semiconductor components and devices on wafer, cutting tunica albuginea, thinning diaphragm, UV film or DAF conducting film.
5. the various films pasted crystal column surface according to claim 4 carry out the new technology that laser cuts film, it is characterized in that: described film thickness is between 0.02mm to 1.5mm.
6. the various films pasted crystal column surface according to claim 1 carry out the new technology that laser cuts film, it is characterized in that: described laser is cut the laser beam spot diameter that membranous system focuses on film and is less than 0.2mm.
7. the various films pasted crystal column surface according to claim 1 carry out the new technology that laser cuts film, it is characterized in that: described laser cutting track edit cell can carry out the close-shaped editor of random two-dimensional and setting to the cutting track that laser is cut in membrane process, also can carry out editor and the setting of random two-dimensional non-closed cutting track.
8. the various films pasted crystal column surface according to claim 1 carry out the new technology that laser cuts film, it is characterized in that: it is 4 inches, 5 inches, 6 inches, 8 inches, 12 inches, 16 inches that described laser cuts the diameter dimension that membrane process is applied to wafer, cut except film except the various films pasted crystal column surface carry out laser, the various films that can also paste random two-dimensional polygon flakes surface carry out laser and cut film.
9. the various films pasted crystal column surface according to claim 1 carry out the new technology that laser cuts film, it is characterized in that: described laser is cut membrane process and namely be can be used for carrying out film cutting along the edge of wafer or the edge of random two-dimensional polygon flakes, also can be used in indentation crystal round fringes or certain size in random two-dimensional polygon flakes edge, or outside exceeding the outer or random two-dimensional polygon flakes edge of Waffer edge, certain size carry out film cutting.
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| CN201510623879.XA CN105215556A (en) | 2015-09-25 | 2015-09-25 | The new technology that laser cuts film is carried out to the various films that crystal column surface pastes |
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| CN201510623879.XA CN105215556A (en) | 2015-09-25 | 2015-09-25 | The new technology that laser cuts film is carried out to the various films that crystal column surface pastes |
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| CN105215556A true CN105215556A (en) | 2016-01-06 |
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Cited By (8)
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| CN109003898A (en) * | 2017-06-07 | 2018-12-14 | 郑州光力瑞弘电子科技有限公司 | One kind realizing the new process of pattern transfer on thin slice (including wafer) |
| CN109530930A (en) * | 2018-12-27 | 2019-03-29 | 北京中科镭特电子有限公司 | A method of laser processing chip |
| US10607861B2 (en) | 2017-11-28 | 2020-03-31 | Nxp B.V. | Die separation using adhesive-layer laser scribing |
| CN111070448A (en) * | 2019-12-30 | 2020-04-28 | 成都先进功率半导体股份有限公司 | Wafer ring cutting method |
| CN111432974A (en) * | 2017-11-30 | 2020-07-17 | 日东电工株式会社 | Laser processing method for long film |
| CN114347279A (en) * | 2021-12-31 | 2022-04-15 | 苏州北汀羽电子有限公司 | Wafer slotting method and yellow glue film edge cutting equipment |
| CN114589419A (en) * | 2022-05-07 | 2022-06-07 | 湖北三维半导体集成创新中心有限责任公司 | Wafer cutting method and laser cutting device |
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| CN111070448A (en) * | 2019-12-30 | 2020-04-28 | 成都先进功率半导体股份有限公司 | Wafer ring cutting method |
| CN114347279A (en) * | 2021-12-31 | 2022-04-15 | 苏州北汀羽电子有限公司 | Wafer slotting method and yellow glue film edge cutting equipment |
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