CN105207323B - Charger with thermal conditioning circuit - Google Patents
Charger with thermal conditioning circuit Download PDFInfo
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- CN105207323B CN105207323B CN201510770804.4A CN201510770804A CN105207323B CN 105207323 B CN105207323 B CN 105207323B CN 201510770804 A CN201510770804 A CN 201510770804A CN 105207323 B CN105207323 B CN 105207323B
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Abstract
The present invention provides a kind of charger with thermal conditioning circuit, it includes：Charging circuit, it provides charging current to the battery；Thermal conditioning circuit, its output drive signal when temperature exceedes predetermined temperature threshold give the charging circuit to reduce the charging current.Compared with prior art, thermal conditioning circuit is added in charger in the present invention, when the charger temperature is higher than predetermined temperature threshold, charging current is then reduced, so as to ensure that the heat of chip internal is constant, so can both continue to charge, again ensure chip will not excess temperature, improve security.
Description
【Technical field】
It is more particularly to a kind of that there is the charger of thermal conditioning the present invention relates to battery charging field.
【Background technology】
Linear charger has been widely used at present.Linear charger usually there is constant-current charging phase and constant pressure to fill
The electric stage.In constant-current charging phase, since cell voltage is relatively low, the heat on the power transistor of chip internal is larger, meeting
Cause that the temperature of chip is excessive, and chip is more easily damaged.
It is therefore desirable to provide a kind of new solution to solve the above problems.
【The content of the invention】
It is an object of the invention to provide a kind of improved charger, and, with thermal conditioning circuit, it can be according to charging for it
The temperature of device adjusts charging current, so as to avoiding excessive high temperature.
To achieve the above object, the present invention provides a kind of charger, it includes：Charging circuit, it is provided to the battery
Charging current；Thermal conditioning circuit, its output drive signal when temperature exceedes predetermined temperature threshold give the charging circuit to drop
The low charging current.
Further, the charging circuit includes：Power transistor, its first connecting pin as power input with it is defeated
Enter supply voltage to be connected, the second connection end of the power transistor is connected as charging output terminal with the battery；Mirror image is brilliant
Body pipe, its control terminal are connected with the control terminal of the power transistor, its first connecting pin and the first of the power transistor
Connecting pin is connected；Detection resistance, its second connection end ground connection；The the first partial pressure electricity being connected between charging output and ground
Resistance and the second divider resistance；Current control transistor, its first connecting pin are connected with the second connection end of the mirrored transistor,
Its second connection end is connected with the first connecting pin of detection resistance；Clamper operational amplifier, it is with first input end, second defeated
Enter end and output terminal, its first input end is connected with the second connection end of the power transistor, its second input terminal with it is described
The second connection end of mirrored transistor is connected, its output terminal is connected with the control terminal of the current control transistor；Constant pressure computing
Amplifier, it is connected with first input end, the second input terminal and output terminal, its first input end with the first reference voltage, the
Two input terminals are connected with the intermediate node of the first divider resistance and the second divider resistance, its output terminal and the power transistor
Control terminal is connected；Constant current operational amplifier, its with first input end, the second input terminal and output terminal, its first input end with
Second reference voltage is connected, its second input terminal is connected with the first connecting pin of the detection resistance, its output terminal and the electricity
The control terminal of flow control transistor is connected.
Further, the thermal conditioning circuit injects thermal conditioning electric current when temperature exceedes the predetermined temperature threshold to institute
The grid of power transistor is stated, to draw high the voltage of the grid of the power transistor, and then the charging current is reduced, in temperature
Degree is not injected into thermal conditioning electric current to the grid of the power transistor when being less than the predetermined temperature threshold.
Further, the thermal conditioning circuit includes positive temperature coefficient current generating circuit, negative temperature parameter current produces
Circuit, current comparison circuit and output driving circuit, the positive temperature coefficient current generating circuit produce positive temperature coefficient electric current；
The negative temperature parameter current generation circuit produces negative temperature parameter current；The current comparison circuit negative temperature system
Number electric current and the positive temperature coefficient electric current, when temperature is higher than the predetermined temperature threshold, the positive temperature coefficient electric current is high
In the negative temperature parameter current, effective comparison signal is exported, when temperature is less than the predetermined temperature threshold, the positive temperature
Degree coefficient current is less than the negative temperature parameter current, exports invalid comparison signal；The output driving circuit, in the ratio
Compared with signal for it is effective when, there is provided the thermal conditioning electric current, and being injected into the grid of the power transistor, in the comparison
When signal is invalid, the thermal conditioning electric current is not provided.
Further, the thermal conditioning electric current and the negative temperature parameter current and the difference of the positive temperature coefficient electric current
It is proportional.
Further, the positive temperature coefficient current generating circuit includes transistor M1, M2, M3, M4, M5, M6, resistance
R1, bipolar transistor Q1 and Q2, the negative temperature parameter current generation circuit include transistor M7, M8, M9, M10, M11,
M14, M16 and resistance R2, the current comparison circuit include transistor M12, M13, M15 and M17, the output driving circuit bag
Include transistor M18, M19, M20, M21, M22, M23, M2 and M25.
Further, the source electrode of transistor M1, M2, M7, M8, M12, M22, M23 connects the input supply voltage, transistor
The gate interconnection of M1, M2, M12, the gate interconnection of transistor M7, M8, the gate interconnection of transistor M22, M23, transistor M1's
Grid drains with it to be connected, and the grid of transistor M7 drains with it to be connected, and the grid of transistor M22 drains with it to be connected, crystal
The source electrode of pipe M3, M4, M9, M10, M13, M24, M25 the drain electrode phase with transistor M1, M2, M7, M8, M12, M22, M23 respectively
Even, the gate interconnection of transistor M3, M4, M13, the gate interconnection of transistor M9, M10, the gate interconnection of transistor M24, M25,
The grid of transistor M3 drains with it to be connected, and the grid of transistor M9 drains with it to be connected, and the grid of transistor M24 drains with it
Be connected, transistor M5, M6, M11, M11, M14, M15, M19 drain electrode respectively with transistor M3, M4, M9, M10, M13, M24
Drain electrode is connected, and the drain electrode of transistor M18 is connected with the drain electrode of transistor M13, the gate interconnection of transistor M5, M6, transistor
The gate interconnection of M14, M15, the gate interconnection of transistor M18, M19, the grid of transistor M11 and the drain electrode phase of transistor M6
Even, the grid of transistor M6 drains with it to be connected, and the grid of transistor M14 drains with it to be connected, the grid of transistor M18 and its
Drain electrode is connected, and resistance R1 is connected between the source electrode of transistor M5 and the emitter of bipolar transistor Q1, bipolar transistor
The base stage and grounded collector of Q1, the emitter of bipolar transistor Q1 are connected to the source electrode of transistor M6, bipolar transistor
The base stage and grounded collector of Q2, resistance R2 are connected between the source electrode and ground terminal of transistor M11, transistor M16, M17,
Source electrode of the drain electrode of M20, M21 respectively with transistor M14, M15, M18, M19 is connected, the source of transistor M16, M17, M20, M21
Pole is grounded, and the grid of transistor M16 drains with it to be connected, and the grid of transistor M20 drains with it to be connected, the leakage of transistor M25
Pole exports the thermal conditioning electric current, and the node A between transistor M13 and M15 exports effective or invalid comparison signal, in node
Represent effective when A is high level, represent invalid when node A is low level.
Compared with prior art, thermal conditioning circuit is added in charger in the present invention, in the charger temperature
During higher than predetermined temperature threshold, then charging current is reduced, so as to ensure that the heat of chip internal is constant, so can both continue to fill
Electricity, but ensure chip will not excess temperature, improve security.
【Brief description of the drawings】
It will be better understood with reference to refer to the attached drawing and ensuing detailed description, the present invention, wherein same reference numeral
Corresponding same structure member, wherein：
Fig. 1 is the circuit diagram of charger in one embodiment in the present invention.
【Embodiment】
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, it is below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
" one embodiment " or " embodiment " referred to herein refer to special characteristic relevant with the embodiment, structure or
Characteristic at least may be included at least one implementation of the present invention.In the present specification different places occur " in a reality
Apply in example " not necessarily all refer to same embodiment, also it is necessarily that the independent or selection mutually exclusive with other embodiment is real
Apply example." multiple ", " some " in the present invention represent two or more."and/or" in the present invention represent " and " or
"or".
Fig. 1 is the circuit diagram of charger 10 in one embodiment in the present invention.As shown in Figure 1, the charging
Device 10 includes charging circuit 100 and thermal conditioning circuit 200.The charging circuit 100 provides charging current, the charging current pair
Battery charges.The thermal conditioning circuit 200 output driving when the temperature of the charger 10 exceedes predetermined temperature threshold
Signal gives the charging circuit 100 to reduce the charging current.Except part of devices, such as detection resistance hereinafter
RSET, the charger 10 are located in a chip, the temperature in the charger 10 that the temperature refers to.
The charging circuit 100 includes power transistor M27, mirrored transistor M26, detection resistance RSET, the first partial pressure
Resistance R3, the second divider resistance R4, current control transistor M28, clamper operational amplifier MA, constant pressure operational amplifier VA and perseverance
Flow operational amplifier CA.
The first connecting pin of the power transistor M27 is connected as power input with input supply voltage VCC, described
The second connection end of power transistor M27 is connected as charging output terminal VOUT with battery.The mirrored transistor M28, it is controlled
End processed is connected with the control terminal of the power transistor M27, its first connecting pin is connected with the first of the power transistor M27
End is connected.The second connection end ground connection of detection resistance RSET.First divider resistance R3 and the second divider resistance R4 are connected to charging
Between output and ground.The first connecting pin of current control transistor M28 is connected with the second of the mirrored transistor M26
End is connected, its second connection end is connected with the first connecting pin of detection resistance RSET.
Clamper operational amplifier MA, it is with first input end, the second input terminal and output terminal, its first input end and institute
The second connection end for stating power transistor M27 is connected, the second connection end phase of its second input terminal and the mirrored transistor M26
Even, its output terminal is connected with the control terminal of the current control transistor M28.Constant pressure operational amplifier VA, it is defeated with first
Enter end, the second input terminal and output terminal, its first input end with the first reference voltage VREF1 to be connected, the second input terminal and first
The intermediate node of divider resistance R3 and the second divider resistance R4 are connected, the control terminal of its output terminal and the power transistor M27
It is connected.Constant current operational amplifier CA, it is with first input end, the second input terminal and output terminal, its first input end and second
Reference voltage VREF2 is connected, its second input terminal is connected with the first connecting pin of the detection resistance RSET, its output terminal and institute
The control terminal for stating current control transistor M28 is connected.
In one embodiment, the power transistor M27, mirrored transistor M26 and current control transistor M28 are
PMOS transistor, the source electrode of PMOS transistor is the first connecting pin, its drain electrode is second connection end, its grid is held in order to control.Institute
State the normal phase input end of clamper operational amplifier MA, the constant pressure operational amplifier VA and constant current operational amplifier CA for its first
Input terminal, negative-phase input are its second input terminal.
The detection resistance RSET is external resistance, and for setting maximum charging current Ic, output terminal VOUT connects battery, fills
Electric current is provided by transistor M27, it and transistor M26 proportion relations (being assumed to be K), clamper operational amplifier MA are protected
The drain voltage of card M26 and M27 is equal, ensures that the mirror of M26 and M27 is accurate, improves charging current precision.Divider resistance
R3 and R4 is connected between output terminal VOUT and ground, for detecting output voltage.Constant pressure operational amplifier VA output terminals control PMOS
So as to form voltage feedback loop, the final burning voltage of output voltage VO UT is the grid of transistor M26 and M27：
The input terminal of constant current operational amplifier CA is the drain electrode VSET and the second reference voltage VREF2 of transistor M28 respectively,
The grid of output terminal controlling transistor M26 and M27 are so as to form current feedback loop.
Work as output voltage：When, voltage feedback loop not control loop, transistor M26 and
The grid of M27 is controlled by current feedback loop, and the output current that current feedback loop controls is：
First reference voltage VREF1 and the second reference voltage VREF2 can be set as identical voltage, can not also phase
Deng.
As described in Figure 1, the thermal conditioning circuit 200 exceedes the predetermined temperature threshold in the temperature of the charger 10
When inject thermal conditioning electric current It to the power transistor M27 grid, to draw high the electricity of the grid of the power transistor M27
Pressure, and then the charging current Ic is reduced, ultimately resulting in the temperature of the charger 10 reduces.In the temperature of the charger 10
Thermal conditioning electric current It is not injected into during less than the predetermined temperature threshold to the grid of the power transistor M27, the charging electricity
Stream Ic is remained unchanged.
In one embodiment, the thermal conditioning circuit 200 includes positive temperature coefficient current generating circuit 210, negative temperature system
Number current generating circuit 220, current comparison circuit 230 and output driving circuit 240.
The positive temperature coefficient current generating circuit 210 produces positive temperature coefficient electric current, it becomes with temperature elevated currents
Greatly.The negative temperature parameter current generation circuit 220 produces negative temperature parameter current, it diminishes with temperature elevated currents.Institute
230 negative temperature parameter current of current comparison circuit and the positive temperature coefficient electric current are stated, in temperature higher than described pre-
When determining temperature threshold, the positive temperature coefficient electric current is higher than the negative temperature parameter current, effective comparison signal is exported, in temperature
When degree is less than the predetermined temperature threshold, the positive temperature coefficient electric current is less than the negative temperature parameter current, and it is invalid to export
Comparison signal.The output driving circuit 240 is when the comparison signal is effective, there is provided the thermal conditioning electric current It, and will
It is injected into the grid of the power transistor, wherein the thermal conditioning electric current It and the negative temperature parameter current and it is described just
The difference of temperature coefficient current is proportional, when the comparison signal is invalid, does not provide the thermal conditioning electric current It.
In a specific embodiment, the positive temperature coefficient current generating circuit 210 include transistor M1, M2, M3,
M4, M5, M6, resistance R1, bipolar transistor Q1 and Q2.The negative temperature parameter current generation circuit 220 include transistor M7,
M8, M9, M10, M11, M14, M16, resistance R2.The current comparison circuit 230 includes transistor M12, M13, M15, M17.Institute
Stating output driving circuit 240 includes transistor M18, M19, M20, M21, M22, M23, M2 and M25.
The source electrode of transistor M1, M2, M7, M8, M12, M22, M23 meet the input supply voltage, transistor M1, M2, M12
Gate interconnection, the gate interconnection of transistor M7, M8, the gate interconnection of transistor M22, M23, the grid of transistor M1 leaks with it
Extremely it is connected, the grid of transistor M7 drains with it to be connected, and the grid of transistor M22 drains with it to be connected.Transistor M3, M4, M9,
Drain electrode of the source electrode of M10, M13, M24, M25 respectively with transistor M1, M2, M7, M8, M12, M22, M23 is connected, transistor M3,
The gate interconnection of M4, M13, the gate interconnection of transistor M9, M10, the gate interconnection of transistor M24, M25, the grid of transistor M3
Pole drains with it to be connected, and the grid of transistor M9 drains with it to be connected, and the grid of transistor M24 drains with it to be connected.Transistor
Drain electrode of the drain electrode of M5, M6, M11, M11, M14, M15, M19 respectively with transistor M3, M4, M9, M10, M13, M24 is connected, brilliant
The drain electrode of body pipe M18 is connected with the drain electrode of transistor M13, the gate interconnection of transistor M5, M6, the grid of transistor M14, M15
Interconnection, the gate interconnection of transistor M18, M19, the grid of transistor M11 are connected with the drain electrode of transistor M6, the grid of transistor M6
Pole drains with it to be connected, and the grid of transistor M14 drains with it to be connected, and the grid of transistor M18 drains with it to be connected.Resistance R1
It is connected between the source electrode of transistor M5 and the emitter of bipolar transistor Q1, the base stage and collector of bipolar transistor Q1
Ground connection, the emitter of bipolar transistor Q1 are connected to the source electrode of transistor M6, the base stage and collector of bipolar transistor Q2
Ground connection, resistance R2 are connected between the source electrode and ground terminal of transistor M11, the drain electrode difference of transistor M16, M17, M20, M21
It is connected with the source electrode of transistor M14, M15, M18, M19, the source electrode ground connection of transistor M16, M17, M20, M21, transistor M16's
Grid drains with it to be connected, and the grid of transistor M20 drains with it to be connected.The drain electrode of transistor M25 exports the thermal conditioning electricity
Flow It.Node A between transistor M13 and M15 exports effective or invalid comparison signal, is represented when node A is high level
Effectively, represent invalid when node A is low level.
The operation principle of the thermal conditioning circuit 200 is as follows, when temperature is not reaching to the predetermined temperature threshold of setting,
The negative temperature parameter current of M15 and M17 mirror images is more than the positive temperature coefficient electric current of M12 and M13 mirror images, and the voltage of node A is drawn
Low, the current mirror of M18 and M20 compositions does not have electric current, so that M23 and M25 do not have electric current, charge loop will not be controlled,
The grid of i.e. described transistor M27 will not be injected into thermal conditioning circuit I t.When temperature raises, the increase of positive temperature coefficient electric current, bears
Temperature coefficient current reduces, when temperature exceedes given threshold, the negative temperature parameter currents of M15 and M17 mirror images be less than M12 with
The positive temperature coefficient electric current of M13 mirror images, the voltage of node A are gradually drawn high, and the current mirror of M18 and M20 compositions begins with electric current,
So as to M23 and M25 output thermal conditioning electric current It, the grid of transistor M26 and M27 are gradually drawn high so that charging current is gradual
Reduce, so that the lower power consumption on power transistor M27, reduce the heat of chip.This thermal conditioning feedback control loop is eventually
The temperature of chip is reached the threshold value of setting, under conditions of ensureing to continue charging, keep chip heat constant.
The word that connection in the present invention, the expression such as connect, be connected are electrically connected all referring to direct or indirect electric connection,
It is described to refer to be electrically connected by an element, such as capacitance, inductance or transistor etc. indirectly.
Described above has fully disclosed the embodiment of the present invention.It is pointed out that it is familiar with the field
Scope of the technical staff to any change that the embodiment of the present invention is done all without departing from claims of the present invention.
Correspondingly, the scope of claim of the invention is also not limited only to the embodiment.
Claims (6)
1. a kind of charger, it is characterised in that it includes：
Charging circuit, it provides charging current to battery；
Thermal conditioning circuit, its when the temperature of the affiliated chip of the charger exceedes predetermined temperature threshold output drive signal to institute
Charging circuit is stated to reduce the charging current,
The charging circuit includes：
Power transistor, its first connecting pin are connected as power input with input supply voltage, the power transistor
Second connection end is connected as charging output terminal with the battery；
Mirrored transistor, its control terminal are connected with the control terminal of the power transistor, its first connecting pin is brilliant with the power
First connecting pin of body pipe is connected；
Detection resistance, its second connection end ground connection；
The first divider resistance and the second divider resistance being connected between charging output and ground；
Current control transistor, its first connecting pin are connected with the second connection end of the mirrored transistor, its second connection end
It is connected with the first connecting pin of detection resistance；
Clamper operational amplifier, it is with first input end, the second input terminal and output terminal, its first input end and the power
The second connection end of transistor is connected, its second input terminal is connected with the second connection end of the mirrored transistor, its output terminal
It is connected with the control terminal of the current control transistor；
Constant pressure operational amplifier, it is referred to first input end, the second input terminal and output terminal, its first input end and first
Voltage is connected, and the second input terminal is connected with the intermediate node of the first divider resistance and the second divider resistance, its output terminal with it is described
The control terminal of power transistor is connected；
Constant current operational amplifier, it is referred to first input end, the second input terminal and output terminal, its first input end and second
Voltage is connected, its second input terminal is connected with the first connecting pin of the detection resistance, its output terminal and the power transistor
Control terminal be connected,
The thermal conditioning circuit injects thermal conditioning when the temperature of the affiliated chip of the charger exceedes the predetermined temperature threshold
Electric current to draw high the voltage of the grid of the power transistor, and then reduces the charging to the grid of the power transistor
Electric current, thermal conditioning electric current is not injected into when the temperature of the affiliated chip of the charger is less than the predetermined temperature threshold to the work(
The grid of rate transistor,
In addition to detection resistance, the charger is located in same chip.
2. charger according to claim 1, it is characterised in that power transistor, mirrored transistor and current control are brilliant
Body pipe is PMOS transistor, and the source electrode of PMOS transistor is the first connecting pin, its drain electrode is second connection end, its grid is in order to control
End, the normal phase input end of the clamper operational amplifier, the constant pressure operational amplifier and constant current operational amplifier for its first
Input terminal, negative-phase input are its second input terminal.
3. charger according to claim 1, it is characterised in that the thermal conditioning circuit is produced including positive temperature coefficient electric current
Raw circuit, negative temperature parameter current generation circuit, current comparison circuit and output driving circuit,
The positive temperature coefficient current generating circuit produces positive temperature coefficient electric current；
The negative temperature parameter current generation circuit produces negative temperature parameter current；
The current comparison circuit negative temperature parameter current and the positive temperature coefficient electric current, in temperature higher than described
During predetermined temperature threshold, the positive temperature coefficient electric current is higher than the negative temperature parameter current, exports effective comparison signal,
When temperature is less than the predetermined temperature threshold, the positive temperature coefficient electric current is less than the negative temperature parameter current, and output is invalid
Comparison signal；
The output driving circuit, when the comparison signal is effective, there is provided the thermal conditioning electric current, and be injected into institute
The grid of power transistor is stated, when the comparison signal is invalid, does not provide the thermal conditioning electric current.
4. charger according to claim 3, it is characterised in that the thermal conditioning electric current and the negative temperature parameter current
It is proportional with the difference of the positive temperature coefficient electric current.
5. charger according to claim 4, it is characterised in that
The positive temperature coefficient current generating circuit includes transistor M1, M2, M3, M4, M5, M6, resistance R1, bipolar transistor
Q1 and Q2,
The negative temperature parameter current generation circuit includes transistor M7, M8, M9, M10, M11, M14, M16 and resistance R2,
The current comparison circuit includes transistor M12, M13, M15 and M17,
The output driving circuit includes transistor M18, M19, M20, M21, M22, M23, M2 and M25.
6. charger according to claim 5, it is characterised in that
The source electrode of transistor M1, M2, M7, M8, M12, M22, M23 connect the input supply voltage, the grid of transistor M1, M2, M12
Pole interconnects, the gate interconnection of transistor M7, M8, the gate interconnection of transistor M22, M23, the grid of transistor M1 and its phase that drains
Even, the grid of transistor M7 drains with it to be connected, and the grid of transistor M22 drains with it to be connected,
The source electrode of transistor M3, M4, M9, M10, M13, M24, M25 respectively with transistor M1, M2, M7, M8, M12, M22, M23
Drain electrode is connected, the gate interconnection of transistor M3, M4, M13, the gate interconnection of transistor M9, M10, the grid of transistor M24, M25
Interconnection, the grid of transistor M3 drains with it to be connected, and the grid of transistor M9 drains with it to be connected, the grid of transistor M24 and
It, which drains, is connected,
The drain electrode leakage with transistor M3, M4, M9, M10, M13, M24 respectively of transistor M5, M6, M11, M11, M14, M15, M19
Extremely it is connected, the drain electrode of transistor M18 is connected with the drain electrode of transistor M13, the gate interconnection of transistor M5, M6, transistor M14,
The gate interconnection of M15, the gate interconnection of transistor M18, M19, the grid of transistor M11 are connected with the drain electrode of transistor M6, brilliant
The grid of body pipe M6 drains with it to be connected, and the grid of transistor M14 drains with it to be connected, and the grid of transistor M18 drains with it
It is connected,
Resistance R1 is connected between the source electrode of transistor M5 and the emitter of bipolar transistor Q1, the base of bipolar transistor Q1
Pole and grounded collector, the emitter of bipolar transistor Q1 are connected to the source electrode of transistor M6, the base of bipolar transistor Q2
Pole and grounded collector, resistance R2 are connected between the source electrode and ground terminal of transistor M11, transistor M16, M17, M20, M21
Source electrode of the drain electrode respectively with transistor M14, M15, M18, M19 be connected, the source electrode ground connection of transistor M16, M17, M20, M21,
The grid of transistor M16 drains with it to be connected, and the grid of transistor M20 drains with it to be connected,
The drain electrode of transistor M25 exports the thermal conditioning electric current,
Node A between transistor M13 and M15 exports effective or invalid comparison signal, is indicated when node A is high level
Effect, represents invalid when node A is low level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510770804.4A CN105207323B (en) | 2015-11-12 | 2015-11-12 | Charger with thermal conditioning circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510770804.4A CN105207323B (en) | 2015-11-12 | 2015-11-12 | Charger with thermal conditioning circuit |
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| CN105207323A CN105207323A (en) | 2015-12-30 |
| CN105207323B true CN105207323B (en) | 2018-05-08 |
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| CN107492929B (en) * | 2017-08-30 | 2019-12-27 | 南京中感微电子有限公司 | Charging circuit provided with current protection circuit |
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| CN104734309A (en) * | 2015-04-21 | 2015-06-24 | 中投仙能科技（苏州）有限公司 | Temperature-control charging device for lithium batteries for rail transit |
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| CN101431250A (en) * | 2007-11-06 | 2009-05-13 | 上海辰蕊微电子科技有限公司 | Charging management control circuit used for battery charger and its control method |
| CN102880220A (en) * | 2011-07-12 | 2013-01-16 | 联咏科技股份有限公司 | Temperature coefficient current triggering generator and temperature coefficient current triggering generating module |
| CN103532201A (en) * | 2013-10-28 | 2014-01-22 | 无锡中星微电子有限公司 | Quick charge circuit for battery |
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