CN105177533B - 一种利用等离子体原位清洗mwcvd舱体的方法 - Google Patents
一种利用等离子体原位清洗mwcvd舱体的方法 Download PDFInfo
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CN109183146B (zh) * | 2018-10-17 | 2020-08-07 | 哈尔滨工业大学 | 一种利用电感耦合等离子体技术消除单晶金刚石籽晶表面缺陷的方法 |
CN113564562A (zh) * | 2021-07-08 | 2021-10-29 | 哈工大机器人(中山)无人装备与人工智能研究院 | 一种mpcvd腔体清洗方法 |
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CN102011097A (zh) * | 2010-12-17 | 2011-04-13 | 中微半导体设备(上海)有限公司 | 一种清除第ⅲ族元素和第v族元素化合物沉积物残余的方法 |
US8097088B1 (en) * | 2010-10-07 | 2012-01-17 | Applied Materials, Inc. | Methods for processing substrates in a dual chamber processing system having shared resources |
CN102899635A (zh) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | 一种原位清洁mocvd反应腔室的方法 |
CN102899636A (zh) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | 一种原位清洁mocvd反应腔室的方法 |
CN104775154A (zh) * | 2015-04-25 | 2015-07-15 | 哈尔滨工业大学 | 一种同质外延生长单晶金刚石时控制表面温度的方法 |
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US8097088B1 (en) * | 2010-10-07 | 2012-01-17 | Applied Materials, Inc. | Methods for processing substrates in a dual chamber processing system having shared resources |
CN102011097A (zh) * | 2010-12-17 | 2011-04-13 | 中微半导体设备(上海)有限公司 | 一种清除第ⅲ族元素和第v族元素化合物沉积物残余的方法 |
CN102899635A (zh) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | 一种原位清洁mocvd反应腔室的方法 |
CN102899636A (zh) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | 一种原位清洁mocvd反应腔室的方法 |
CN104775154A (zh) * | 2015-04-25 | 2015-07-15 | 哈尔滨工业大学 | 一种同质外延生长单晶金刚石时控制表面温度的方法 |
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