CN105177533B - A kind of method of utilization plasma situ cleaning MWCVD nacelles - Google Patents
A kind of method of utilization plasma situ cleaning MWCVD nacelles Download PDFInfo
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- CN105177533B CN105177533B CN201510563596.0A CN201510563596A CN105177533B CN 105177533 B CN105177533 B CN 105177533B CN 201510563596 A CN201510563596 A CN 201510563596A CN 105177533 B CN105177533 B CN 105177533B
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Abstract
A kind of method of utilization plasma situ cleaning MWCVD nacelles, the present invention relates to the method for cleaning MWCVD nacelles.The invention solves the problems that the diamond deposited in existing MWCVD growing systems, DLC and amorphous carbon layer hardness abrasion resistance are high, and the factor such as instrument special tectonic itself is the problem of cause to be difficult to remove film layer.Method：First, nacelle is purged；2nd, cabin is closed；3rd, vacuumize；4th, situ cleaning, that is, complete a kind of method of utilization plasma situ cleaning MWCVD nacelles.The present invention is used for the method using plasma situ cleaning MWCVD nacelles.
Description
Technical field
The present invention relates to the method for cleaning MWCVD nacelles.
Background technology
In recent years, large size single crystal diamond and quasi- single-crystal diamond are due to its high hardness, highest thermal conductivity, pole
Wide electromagnetism passes through frequency range, excellent Radiation hardness and decay resistance, in Precision Machining, high frequency communications, space flight aerospace, point
The high-tech areas such as end technology increasingly turn into basis, crucial or even unique material solution.Traditional artificial single crystal's Buddha's warrior attendant
Stone is to use HTHP (HPHT) method, and the diamond that this method is prepared is impure more, and defect concentration is higher, and quality is relative
It is poor, and size is smaller, is differed greatly compared with the demand of related application, causes the HPHT diamond scope of applications narrower, is expert at
Downstream is in industry, profit is low, and competitiveness is not strong.
Compared to HPHT methods, microwave plasma enhanced chemical vapor deposition (MWCVD) method be it is generally acknowledged at present prepare it is big
One of best approach of size single crystal diamond, this method prepare single-crystal diamond have impurity concentration it is low, through wide waveband,
Defect concentration is low, size is larger and the advantages of controllable growth rate, it is considered to be most promises to be and following produces people in enormous quantities
The method for making diamond.
When growing cvd diamond using MWCVD instruments, organic matter carbon source is after cracking, and carbon atom is with two kinds of sp2 and sp3
Bonding scheme is deposited in diamond seed, and carries out epitaxial growth with this.And because in growth course, plasma is full of
Whole nacelle so that be also difficult to avoid that on the inwall and instrument trays of nacelle the diamonds of ground depositing dosed quantities, DLC or
Amorphous carbon layer.The presence of above-mentioned film layer can influence the transparency of observation of use instrument window so that from outer bound pair instrument internal diamond
The observation of growing state becomes difficult, while can cause heat is more outwardly to be distributed from bulkhead, causes substantial amounts of energy wave
Take.
Because diamond and DLC film have high hardness and wearability, traditional mechanical means almost can not
Such film layer is thoroughly removed.Simultaneously as the special tectonic of MWCVD instruments so that with manpower to some positions in nacelle inside
Cleaning become extremely difficult.
The content of the invention
It is resistance to that the present invention will solve the diamond deposited in existing MWCVD growing systems, DLC and amorphous carbon layer hardness
Grit is high, and the factor such as instrument special tectonic itself is the problem of cause to be difficult to remove film layer, and provide one kind utilize etc. from
The method of daughter situ cleaning MWCVD nacelles.
A kind of method of utilization plasma situ cleaning MWCVD nacelles, is specifically followed the steps below：
First, nacelle is purged：
With air gun to being purged inside microwave plasma enhanced chemical vapor deposition instrument room body；
2nd, cabin is closed：
Sample stage is moved into nacelle center, nacelle hatch door is closed；
3rd, vacuumize：
Close behind cabin, nacelle is vacuumized, vacuum in nacelle is reached 3.0 × 10-6Mbar~5.0 × 10- 6mbar；
4th, situ cleaning：
1., opening program, is passed through hydrogen, sets hydrogen flowing quantity as 200sccm so that nacelle air pressure is 10mbar, is started
Microwave generator, activates plasma；
2., regulation nacelle air pressure is 2mbar~8mbar, and regulation plasma incident power is 1600W~1800W, regulation
Reflection power is 500W~1500W so that plasma bulb diameter reaches 8cm~15cm；
3., regulation hydrogen flowing quantity is 100sccm~400sccm, is that 2mbar~8mbar, hydrogen flowing quantity are in nacelle air pressure
100sccm~400sccm, plasma incident power are that 1600W~1800W, reflection power are 500W~1500W and plasma
Body bulb diameter is under conditions of 8cm~15cm, nacelle cleans 30min~60min in hydrogen plasma atmosphere；
4. oxygen valve, is opened, oxygen is passed through, sets oxygen flow as 10sccm~30sccm, oxygen and hydrogen is treated
It is that 2mbar~8mbar, hydrogen flowing quantity are 100sccm~400sccm, oxygen in nacelle air pressure after plasma atmosphere is well mixed
Throughput be 10sccm~30sccm, plasma incident power be 1600W~1800W, reflection power be 500W~1500W and
Under conditions of a diameter of 8cm~15cm of plasma ball, nacelle cleans 2h~10h under hydrogen-oxygen hybrid plasma atmosphere；
5. oxygen valve, is closed, stopping is passed through oxygen；
6., oxygen is completely exhausted out, holding hydrogen flowing quantity be 100sccm~400sccm, nacelle air pressure be 2mbar~
8mbar, hydrogen flowing quantity are that 100sccm~400sccm, plasma incident power are that 1600W~1800W, reflection power are
Under conditions of the 500W~1500W and a diameter of 8cm~15cm of plasma ball, nacelle is cleaned under hydrogen plasma atmosphere
10min~30min；
7., reflection power is adjusted to 100W~300W, microwave generator is closed, extinguishes plasma glow；
8., regulation hydrogen flowing quantity is 50sccm~200sccm, and in nacelle air pressure be 2mbar~8mbar and hydrogen flowing quantity is
Under conditions of 50sccm~200sccm, 10min~30min is purged to nacelle, that is, completes one kind and utilizes plasma situ cleaning
The method of MWCVD nacelles.
The beneficial effects of the invention are as follows：1st, the present invention makes to be in special bit in nacelle by the corrasion of hydrogen plasma
The amorphous carbon phase being difficult to clean up is put to be completely removed.
2nd, the corrasion of oxygen plasma causes the high diamond of abrasion resistance and DLC phase film layer quilt in nacelle
Remove.
3rd, the removing of depositional coating causes observation window light transmittance to rise, and is easy to astrodome body inner case.
4th, the removing of depositional coating causes nacelle outwardly to distribute heat reduction, saves the energy.
The present invention is used for a kind of method of utilization plasma situ cleaning MWCVD nacelles.
Brief description of the drawings
Fig. 1 is plasma schematic diagram in nacelle of the present invention, and 1 is microwave plasma enhanced chemical vapor deposition instrument room
Wall, 2 be instrument trays, and 3 be cooling water flow conduits, and 4 be plasma；
Fig. 2 is nacelle observation window photo before embodiment one is cleaned；
Fig. 3 is nacelle observation window photo after embodiment one is cleaned；
Fig. 4 is sample tray photo before embodiment one is cleaned；
Fig. 5 is sample tray photo after embodiment one is cleaned.
Embodiment
Technical solution of the present invention is not limited to the embodiment of act set forth below, in addition to each embodiment it
Between any combination.
Embodiment one：Illustrate present embodiment with reference to Fig. 1, one kind described in present embodiment is utilized etc. from
The method of daughter situ cleaning MWCVD nacelles, is specifically followed the steps below：
First, nacelle is purged：
With air gun to being purged inside microwave plasma enhanced chemical vapor deposition instrument room body；
2nd, cabin is closed：
Sample stage is moved into nacelle center, nacelle hatch door is closed；
3rd, vacuumize：
Close behind cabin, nacelle is vacuumized, vacuum in nacelle is reached 3.0 × 10-6Mbar~5.0 × 10- 6mbar；
4th, situ cleaning：
1., opening program, is passed through hydrogen, sets hydrogen flowing quantity as 200sccm so that nacelle air pressure is 10mbar, is started
Microwave generator, activates plasma；
2., regulation nacelle air pressure is 2mbar~8mbar, and regulation plasma incident power is 1600W~1800W, regulation
Reflection power is 500W~1500W so that plasma bulb diameter reaches 8cm~15cm；
3., regulation hydrogen flowing quantity is 100sccm~400sccm, is that 2mbar~8mbar, hydrogen flowing quantity are in nacelle air pressure
100sccm~400sccm, plasma incident power are that 1600W~1800W, reflection power are 500W~1500W and plasma
Body bulb diameter is under conditions of 8cm~15cm, nacelle cleans 30min~60min in hydrogen plasma atmosphere；
4. oxygen valve, is opened, oxygen is passed through, sets oxygen flow as 10sccm~30sccm, oxygen and hydrogen is treated
It is that 2mbar~8mbar, hydrogen flowing quantity are 100sccm~400sccm, oxygen in nacelle air pressure after plasma atmosphere is well mixed
Throughput be 10sccm~30sccm, plasma incident power be 1600W~1800W, reflection power be 500W~1500W and
Under conditions of a diameter of 8cm~15cm of plasma ball, nacelle cleans 2h~10h under hydrogen-oxygen hybrid plasma atmosphere；
5. oxygen valve, is closed, stopping is passed through oxygen；
6., oxygen is completely exhausted out, holding hydrogen flowing quantity be 100sccm~400sccm, nacelle air pressure be 2mbar~
8mbar, hydrogen flowing quantity are that 100sccm~400sccm, plasma incident power are that 1600W~1800W, reflection power are
Under conditions of the 500W~1500W and a diameter of 8cm~15cm of plasma ball, nacelle is cleaned under hydrogen plasma atmosphere
10min~30min；
7., reflection power is adjusted to 100W~300W, microwave generator is closed, extinguishes plasma glow；
8., regulation hydrogen flowing quantity is 50sccm~200sccm, and in nacelle air pressure be 2mbar~8mbar and hydrogen flowing quantity is
Under conditions of 50sccm~200sccm, 10min~30min is purged to nacelle, that is, completes one kind and utilizes plasma situ cleaning
The method of MWCVD nacelles.
The beneficial effect of present embodiment is：1st, present embodiment makes place in nacelle by the corrasion of hydrogen plasma
The amorphous carbon phase being difficult to clean up in specific position is completely removed.
2nd, the corrasion of oxygen plasma causes the high diamond of abrasion resistance and DLC phase film layer quilt in nacelle
Remove.
3rd, the removing of depositional coating causes observation window light transmittance to rise, and is easy to astrodome body inner case.
4th, the removing of depositional coating causes nacelle outwardly to distribute heat reduction, saves the energy.
Embodiment two：Present embodiment from unlike embodiment one：Behind step 3 Zhong Guan cabins, to cabin
Body is vacuumized, and vacuum in nacelle is reached 5.0 × 10-6mbar.It is other identical with embodiment one.
Embodiment three：Unlike one of present embodiment and embodiment one or two：Step 4 2. in
It is 4mbar to adjust nacelle air pressure, and regulation plasma incident power is 1650W, and regulation reflection power is 1300W so that wait from
Daughter bulb diameter reaches 15cm.It is other identical with embodiment one or two.
Embodiment four：Unlike one of present embodiment and embodiment one to three：Step 4 3. in
Regulation hydrogen flowing quantity is 300sccm, is that 4mbar, hydrogen flowing quantity are that 300sccm, plasma incident power are in nacelle air pressure
1650W, reflection power is under conditions of the 1300W and a diameter of 15cm of plasma ball, nacelle are clear in hydrogen plasma atmosphere
Wash 60min.It is other identical with embodiment one to three.
Embodiment five：Unlike one of present embodiment and embodiment one to four：Step 4 4. in
Oxygen valve is opened, oxygen is passed through, sets oxygen flow as 15sccm.It is other identical with embodiment one to four.
Embodiment six：Unlike one of present embodiment and embodiment one to five：Step 4 4. in
It is that 4mbar, hydrogen flowing quantity are 300sccm, oxygen in nacelle air pressure after oxygen is well mixed with the plasma atmosphere of hydrogen
Flow is that 15sccm, plasma incident power are that 1650W, reflection power are 1300W and a diameter of 15cm of plasma ball
Under the conditions of, nacelle cleans 5h under hydrogen-oxygen hybrid plasma atmosphere.It is other identical with embodiment one to five.
Embodiment seven：Unlike one of present embodiment and embodiment one to six：Step 4 6. in
Oxygen is completely exhausted out, holding hydrogen flowing quantity is 300sccm, nacelle air pressure be 4mbar, hydrogen flowing quantity be 300sccm, etc. from
Daughter incident power be 1650W, reflection power be 1300W and a diameter of 15cm of plasma ball under conditions of, nacelle is in hydrogen etc.
20min is cleaned under gas ions atmosphere.It is other identical with embodiment one to six.
Embodiment eight：Unlike one of present embodiment and embodiment one to seven：Step 4 7. in
Reflection power is adjusted to 300W, microwave generator is closed, extinguishes plasma glow.Other and embodiment one to seven
It is identical.
Embodiment nine：Unlike one of present embodiment and embodiment one to eight：Step 4 8. in
Regulation hydrogen flowing quantity is 150sccm.It is other identical with embodiment one to eight.
Embodiment ten：Unlike one of present embodiment and embodiment one to nine：Step 4 8. in
Under conditions of nacelle air pressure is 4mbar and hydrogen flowing quantity is 150sccm, 20min is purged to nacelle.Other and specific embodiment party
Formula one to nine is identical.
Beneficial effects of the present invention are verified using following examples：
Embodiment one：
A kind of method of utilization plasma situ cleaning MWCVD nacelles described in the present embodiment, is specifically according to following
What step was carried out：
First, nacelle is purged：
With air gun to being purged inside microwave plasma enhanced chemical vapor deposition instrument room body；
2nd, cabin is closed：
Sample stage is moved into nacelle center, nacelle hatch door is closed；
3rd, vacuumize：
Close behind cabin, nacelle is vacuumized, vacuum in nacelle is reached 5.0 × 10-6mbar；
4th, situ cleaning：
1., opening program, is passed through hydrogen, sets hydrogen flowing quantity as 200sccm so that nacelle air pressure is 10mbar, is started
Microwave generator, activates plasma；
2., regulation nacelle air pressure is 4mbar, and regulation plasma incident power is 1650W, and regulation reflection power is
1300W so that plasma bulb diameter reaches 15cm；
3., regulation hydrogen flowing quantity is 300sccm, is that 4mbar, hydrogen flowing quantity are 300sccm, plasma in nacelle air pressure
Incident power be 1650W, reflection power be 1300W and a diameter of 15cm of plasma ball under conditions of, nacelle is in hydrogen plasma
60min is cleaned in body atmosphere；
4. oxygen valve, is opened, oxygen is passed through, sets oxygen flow as 15sccm, treat the plasma of oxygen and hydrogen
It is that 4mbar, hydrogen flowing quantity are that 300sccm, oxygen flow are 15sccm, plasma in nacelle air pressure after atmosphere is well mixed
Incident power be 1650W, reflection power be 1300W and a diameter of 15cm of plasma ball under conditions of, nacelle is mixed in hydrogen-oxygen
5h is cleaned under plasma atmosphere；
5. oxygen valve, is closed, stopping is passed through oxygen；
6., oxygen is completely exhausted out, holding hydrogen flowing quantity is 300sccm, is that 4mbar, hydrogen flowing quantity are in nacelle air pressure
300sccm, plasma incident power are that 1650W, reflection power are 1300W and a diameter of 15cm of plasma ball condition
Under, nacelle cleans 20min under hydrogen plasma atmosphere；
7., reflection power is adjusted to 300W, microwave generator is closed, extinguishes plasma glow；
8., regulation hydrogen flowing quantity is 150sccm, in the condition that nacelle air pressure is 4mbar and hydrogen flowing quantity is 150sccm
Under, 20min is purged to nacelle, that is, completes a kind of method of utilization plasma situ cleaning MWCVD nacelles.
Fig. 2 is nacelle observation window photo before embodiment one is cleaned；Fig. 3 is nacelle observation window photo after embodiment one is cleaned；
Fig. 4 is sample tray photo before embodiment one is cleaned；Fig. 5 is sample tray photo after embodiment one is cleaned.As seen from the figure, this reality
Corrasion of the example by hydrogen plasma is applied, the amorphous carbon phase being difficult to clean up in nacelle in specific position is thoroughly removed
Go.The corrasion of oxygen plasma make it that the high diamond of abrasion resistance and DLC phase film layer are eliminated in nacelle.It is heavy
The removing of integrated membrane layer causes observation window light transmittance to rise, and is easy to astrodome body inner case.
Claims (10)
1. a kind of method of utilization plasma situ cleaning MWCVD nacelles, it is characterised in that one kind is in situ using plasma
The method of cleaning MWCVD nacelles is followed the steps below：
First, nacelle is purged：
With air gun to being purged inside microwave plasma enhanced chemical vapor deposition instrument room body；
2nd, cabin is closed：
Sample stage is moved into nacelle center, nacelle hatch door is closed；
3rd, vacuumize：
Close behind cabin, nacelle is vacuumized, vacuum in nacelle is reached 3.0 × 10-6Mbar~5.0 × 10-6mbar；
4th, situ cleaning：
1., opening program, is passed through hydrogen, sets hydrogen flowing quantity as 200sccm so that nacelle air pressure is 10mbar, starts microwave
Generator, activates plasma；
2., regulation nacelle air pressure is 2mbar~8mbar, and regulation plasma incident power is 1600W~1800W, regulation reflection
Power is 500W~1500W so that plasma bulb diameter reaches 8cm~15cm；
3., regulation hydrogen flowing quantity is 300sccm~400sccm, is that 2mbar~8mbar, hydrogen flowing quantity are in nacelle air pressure
300sccm~400sccm, plasma incident power are that 1600W~1800W, reflection power are 500W~1500W and plasma
Body bulb diameter is under conditions of 8cm~15cm, nacelle cleans 60min in hydrogen plasma atmosphere；
4., open oxygen valve, be passed through oxygen, set oxygen flow as 15sccm~30sccm, treat the grade of oxygen and hydrogen from
It is that 2mbar~8mbar, hydrogen flowing quantity are 300sccm~400sccm, oxygen stream in nacelle air pressure after daughter atmosphere is well mixed
Amount be 15sccm~30sccm, plasma incident power be 1600W~1800W, reflection power be 500W~1500W and wait from
Daughter bulb diameter is under conditions of 8cm~15cm, nacelle cleans 2h~10h under hydrogen-oxygen hybrid plasma atmosphere；
5. oxygen valve, is closed, stopping is passed through oxygen；
6., oxygen is completely exhausted out, holding hydrogen flowing quantity be 300sccm~400sccm, nacelle air pressure be 2mbar~
8mbar, hydrogen flowing quantity are that 300sccm~400sccm, plasma incident power are that 1600W~1800W, reflection power are
Under conditions of the 500W~1500W and a diameter of 8cm~15cm of plasma ball, nacelle is cleaned under hydrogen plasma atmosphere
10min~30min；
7., reflection power is adjusted to 100W~300W, microwave generator is closed, extinguishes plasma glow；
8., regulation hydrogen flowing quantity is 50sccm~200sccm, and in nacelle air pressure be 2mbar~8mbar and hydrogen flowing quantity is
Under conditions of 50sccm~200sccm, 10min~30min is purged to nacelle, that is, completes one kind and utilizes plasma situ cleaning
The method of MWCVD nacelles.
2. a kind of method of utilization plasma situ cleaning MWCVD nacelles according to claim 1, it is characterised in that step
Behind rapid three Zhong Guan cabins, nacelle is vacuumized, vacuum in nacelle is reached 5.0 × 10-6mbar。
3. a kind of method of utilization plasma situ cleaning MWCVD nacelles according to claim 1, it is characterised in that step
Rapid four 2. middle regulation nacelle air pressure be 4mbar, regulation plasma incident power is 1650W, and regulation reflection power is 1300W,
So that plasma bulb diameter reaches 15cm.
4. a kind of method of utilization plasma situ cleaning MWCVD nacelles according to claim 1, it is characterised in that step
Rapid four 3. middle regulation hydrogen flowing quantity be 300sccm, be that 4mbar, hydrogen flowing quantity are that 300sccm, plasma enter in nacelle air pressure
Penetrate power be 1650W, reflection power be 1300W and a diameter of 15cm of plasma ball under conditions of, nacelle is in hydrogen plasma
60min is cleaned in atmosphere.
5. a kind of method of utilization plasma situ cleaning MWCVD nacelles according to claim 1, it is characterised in that step
Rapid four 4. middle opening oxygen valves, are passed through oxygen, set oxygen flow as 15sccm.
6. a kind of method of utilization plasma situ cleaning MWCVD nacelles according to claim 1, it is characterised in that step
Rapid four 4. in after oxygen is well mixed with the plasma atmosphere of hydrogen, be that 4mbar, hydrogen flowing quantity are in nacelle air pressure
300sccm, oxygen flow are that 15sccm, plasma incident power are that 1650W, reflection power are 1300W and plasma ball
Under conditions of a diameter of 15cm, nacelle cleans 5h under hydrogen-oxygen hybrid plasma atmosphere.
7. a kind of method of utilization plasma situ cleaning MWCVD nacelles according to claim 1, it is characterised in that step
Rapid four 6. in oxygen is completely exhausted out, holding hydrogen flowing quantity is 300sccm, is that 4mbar, hydrogen flowing quantity are in nacelle air pressure
300sccm, plasma incident power are that 1650W, reflection power are 1300W and a diameter of 15cm of plasma ball condition
Under, nacelle cleans 20min under hydrogen plasma atmosphere.
8. a kind of method of utilization plasma situ cleaning MWCVD nacelles according to claim 1, it is characterised in that step
Rapid four 7. in reflection power is adjusted to 300W, close microwave generator, extinguish plasma glow.
9. a kind of method of utilization plasma situ cleaning MWCVD nacelles according to claim 1, it is characterised in that step
Rapid four 8. it is middle regulation hydrogen flowing quantity be 150sccm.
10. a kind of method of utilization plasma situ cleaning MWCVD nacelles according to claim 1, it is characterised in that
Step 4 8. under conditions of nacelle air pressure is 4mbar and hydrogen flowing quantity is 150sccm, 20min is purged to nacelle.
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| CN109183146B (en) * | 2018-10-17 | 2020-08-07 | 哈尔滨工业大学 | Method for eliminating surface defects of single crystal diamond seed crystal by utilizing inductive coupling plasma technology |
| CN113564562A (en) * | 2021-07-08 | 2021-10-29 | 哈工大机器人(中山)无人装备与人工智能研究院 | MPCVD cavity cleaning method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102011097A (en) * | 2010-12-17 | 2011-04-13 | 中微半导体设备(上海)有限公司 | Method for eliminating sediment residues of compounds of elements in groups III and V |
| US8097088B1 (en) * | 2010-10-07 | 2012-01-17 | Applied Materials, Inc. | Methods for processing substrates in a dual chamber processing system having shared resources |
| CN102899636A (en) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | Method for cleaning metal-organic chemical vapor deposition (MOCV) reaction chamber in situ |
| CN102899635A (en) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | Method for cleaning metal-organic chemical vapor deposition (MOCV) reaction chamber in situ |
| CN104775154A (en) * | 2015-04-25 | 2015-07-15 | 哈尔滨工业大学 | Method for controlling surface temperature in homoepitaxial growth of monocrystal diamond |
-
2015
- 2015-09-07 CN CN201510563596.0A patent/CN105177533B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8097088B1 (en) * | 2010-10-07 | 2012-01-17 | Applied Materials, Inc. | Methods for processing substrates in a dual chamber processing system having shared resources |
| CN102011097A (en) * | 2010-12-17 | 2011-04-13 | 中微半导体设备(上海)有限公司 | Method for eliminating sediment residues of compounds of elements in groups III and V |
| CN102899636A (en) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | Method for cleaning metal-organic chemical vapor deposition (MOCV) reaction chamber in situ |
| CN102899635A (en) * | 2012-09-26 | 2013-01-30 | 中微半导体设备(上海)有限公司 | Method for cleaning metal-organic chemical vapor deposition (MOCV) reaction chamber in situ |
| CN104775154A (en) * | 2015-04-25 | 2015-07-15 | 哈尔滨工业大学 | Method for controlling surface temperature in homoepitaxial growth of monocrystal diamond |
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