CN105162420B - GaAs base low-leakage current double cantilever beam switchs double grid frequency multiplier - Google Patents
GaAs base low-leakage current double cantilever beam switchs double grid frequency multiplier Download PDFInfo
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Abstract
The GaAs base low-leakage currents double cantilever beam switch double grid HEMT frequency multipliers of the present invention, by GaAs substrates, enhanced HEMT, and external low pass filter, voltage controlled oscillator, divider, high frequency choke coil are formed.The actuation voltage of cantilever switch is designed as HEMT threshold voltage, and HEMT conducting and the transmission of signal are controlled by direct current biasing.Two cantilever beams suspend disconnection when, gate voltage 0 can not form raceway groove, HEMT cut-offs, be advantageous to reduce grid leakage current.When two cantilever beams pull down closure by direct current biasing, biasing changes schottky barrier width, and the increase of two-dimensional electron gas channel concentration, HEMT conductings, reference signal and feedback signal are transmitted by HEMT.After the low-pass filtered device of the output signal that drains and voltage controlled oscillator, divider feedback cycle, the frequency-doubled signal of reference signal is obtained.During an only cantilever switch closure, the amplification to individual signals can be achieved, realize multi-functional.
Description
Technical field
The present invention proposes GaAs (GaAs) base low-leakage current double cantilever beam switch double grid HEMT, and (high electron mobility is brilliant
Body pipe) frequency multiplier, belong to the technical field of microelectromechanical systems.
Background technology
Frequency multiplier is the effect that a reference signal is passed through to functional circuit, produces required reference signal frequency integral multiple
Frequency signal.At present, frequency multiplier is widely used in the fields such as communication, signal transacting.Compared with the HEMT-structure in traditional circuit,
High electron mobility transistor (HEMT) has a higher electron mobility, and speed is faster, more efficient also to reduce power consumption etc..When
Before, MEMS technology also promotes circuit, and the direction that volume diminishes is developed to simple in construction.
The present invention will formally combine HEMT and MEMS technology, propose a kind of GaAs bases low-leakage current double cantilever beam switch double grid
HEMT frequency multipliers.
The content of the invention
Technical problem:It is an object of the invention to provide a kind of GaAs bases low-leakage current double cantilever beam to switch double grid HEMT frequencys multiplication
Device.Two cantilever beams and two grids of lower section correspond.Cantilever beam plays switch in circuit, controls leading for HEMT
Pass to and the transmission of signal.
Technical scheme：The HEMT of the GaAs base low-leakage current double cantilever beam switch double grid frequency multiplier of the present invention is to be grown in
Enhanced HEMT on GaAs substrates, including intrinsic GaAs layers, intrinsic AlGaAs layers N+AlGaAs layers, source electrode, drain electrode, grid,
Anchor area, cantilever switch, pull down pole plate, insulating barrier, through hole, lead；There are intrinsic GaAs layers, intrinsic GaAs layers on gaas substrates
On have intrinsic AlGaAs layers, have N+AlGaAs layers on intrinsic AlGaAs layers, source electrode, drain electrode positioned at two cantilever switch two
Side, source ground, two grids are set up in parallel, and are corresponded with two cantilever switch, one end of cantilever switch is fixed on
In anchor area, the other end is suspended on grid, and drop-down pole plate is arranged on below cantilever switch end, drop-down pole plate ground connection, absolutely
Edge layer is covered on drop-down pole plate, and direct current biasing is acted on cantilever switch by high frequency choke coil and anchor area, and cantilever beam is opened
The actuation voltage of pass is designed as HEMT threshold voltage；Lead connects intrinsic GaAs layers by through hole respectively；
HEMT drain electrodes output signal has two kinds of working methods, and one kind is that selection first port is inputted to low pass filter, low
Bandpass filter output access voltage controlled oscillator, voltage controlled oscillator output access divider, divider output letter by second port
Number conduct feds back through anchor area and is loaded on a cantilever switch, forms backfeed loop, and reference signal is loaded into by anchor area
On another cantilever switch, another working method of HEMT drain electrode output signal is that the directly output of selection second port is put
Big signal.
The closure of the cantilever switch is disconnected by direct current biasing control, when two cantilever switch reaching or
More than realizing drop-down under the direct current biasing of actuation voltage, and gate contact, when switch be in closure state, in the case where gate voltage acts on,
Two-dimensional electron gas channel is formed, HEMT conductings, reference signal is realized with feedback signal by HEMT to be multiplied, and drain electrode output includes two
The phase information of signal, low pass filter is inputted through first port, low pass filter filters out HFS, and output includes phase
The DC voltage of poor information, DC voltage input voltage controlled oscillator, and the output frequency of voltage controlled oscillator is adjusted as control voltage,
Signal after regulating frequency is loaded into outstanding through the 3rd port transmission to divider, divider output signal as new feedback signal
On arm beam switch, the result of looped cycle feedback is that feedback signal is equal with the frequency of reference signal, the 4th of voltage controlled oscillator the
Port output frequency foFor N times of reference signal frequency：N×fref, realize the frequency multiplication of reference signal；N is natural number；
When direct current biasing is less than actuation voltage, two cantilever switch not with gate contact, when switching off, gate voltage
End for 0, HEMT, can effectively reduce grid leakage current, reduce power consumption；
When an only cantilever switch closure, when another cantilever switch is off, the cantilever beam of closure
Two-dimensional electron gas channel formed below, the cantilever switch high resistance area formed below of disconnection are switched, raceway groove is connected with high resistance area
Structure is advantageous to improve HEMT breakdown reverse voltage, and the gating signal on cantilever switch only closed can be put by HEMT
Greatly, amplified signal selection second port output, when the only cantilever switch closure of loading reference signal, reference signal passes through
HEMT amplifies, second port output reference frequency frefAmplified signal, when only loading feedback signal cantilever switch drop-down
When, feedback signal is amplified by HEMT, and feedback frequency signal is voltage controlled oscillator output frequency foAfter divider divided by N knot
Fruit：fo/ N, second port output frequency are fo/ N amplified signal, the cantilever switch of off-state are advantageous to reduce grid leakage
Electric current, reduce power consumption.
Beneficial effect：The GaAs base low-leakage currents double cantilever beam switch double grid HEMT frequency multipliers of the present invention have following notable
The advantages of：
1st, cantilever beam plays a part of switch, convenient control HEMT conducting and the transmission of signal in circuit；
2nd, by the control to cantilever switch, the frequency multiplication of reference signal can be not only realized, can also be realized to single
The amplification of signal, make Multifunctional circuit, expanded application scope；
3rd, HEMT is combined with MEMS technology so that circuit efficiency is lifted, and lower power consumption, is simplified the structure, volume is small-sized
Change.
Brief description of the drawings
Fig. 1 is that the GaAs base low-leakage currents double cantilever beam of the present invention switchs the top view of double grid HEMT frequency multipliers
Fig. 2 is that Fig. 1 GaAs base low-leakage currents double cantilever beam switchs the A-A ' of double grid HEMT frequency multipliers to profile.
Fig. 3 is that Fig. 1 GaAs base low-leakage currents double cantilever beam switchs the B-B ' of double grid HEMT frequency multipliers to profile.
Fig. 4 is ditch when Fig. 1 GaAs base low-leakage currents double cantilever beam switch double grid two cantilever switch of HEMT pull down
Road schematic diagram.
Fig. 5 is that Fig. 1 GaAs base low-leakage currents double cantilever beam is switched when double grid HEMT only has the drop-down of cantilever switch
Raceway groove schematic diagram.
Have in figure：GaAs substrates 1, intrinsic GaAs layers 2, intrinsic AlGaAs layers 3, N+AlGaAs layers 4, source electrode 5, drain electrode 6, grid
Pole 7, anchor area 8, cantilever switch 9, pull down pole plate 10, insulating barrier 11, through hole 12, lead 13, first port 14, second port
15, the 3rd port 16, the 4th port 17.
Embodiment
The GaAs base low-leakage currents double cantilever beam switch double grid HEMT frequency multipliers of the present invention.Including GaAs substrates, enhanced
HEMT, and external low pass filter, voltage controlled oscillator, divider, high frequency choke coil；Wherein HEMT is grown in GaAs substrates
On, including intrinsic GaAs layers, intrinsic AlGaAs layers, N+AlGaAs layers；Source electrode, drain and gate.Grid is formed with N+AlGAs layers
Schottky contacts, intrinsic GaAs layers form hetero-junctions with intrinsic AlGaAs layers.Anchor area is located at grid side, and cantilever switch passes through
Anchor area is across on grid.Drop-down pole plate, drop-down pole plate ground connection are provided with below cantilever beam end, insulating barrier is covered in drop-down
On pole plate.
Reference signal and feedback signal are loaded on two cantilever switch by anchor area respectively.Direct current biasing passes through high frequency
Choke coil and anchor area are acted on cantilever switch.High frequency choke coil ensures that AC signal separates with direct current biasing.
The actuation voltage of cantilever switch is designed as HEMT threshold voltage.When direct current biasing is less than actuation voltage, cantilever
Beam is switched not with gate contact, and when switching off, grid voltage 0, HEMT can not be turned on, and is advantageous to reduce grid leakage current,
Reduce power consumption.
When direct current biasing reaches or surpasses actuation voltage, when two cantilever switch are with gate contact, switch is in closure
State, schottky barrier width narrow under gate voltage effect, and hetero-junctions surface forms Two-dimensional electron gas channel, and HEMT is turned on,
Reference signal is multiplied with feedback signal by HEMT.Drain electrode output signal contains the phase information between two signals, passes through
After low pass filter, high fdrequency component is filtered out, and conveys a DC voltage, voltage controlled oscillator output signal to voltage controlled oscillator
Frequency is by control voltage-regulation.Voltage controlled oscillator output signal passes through after divider, corresponding in frequency that changing for 1/N occurs
Become, and be used as feedback signal, re-enter cantilever switch, by the effect of loop, feedback signal and reference signal frequency phase
Deng.The signal frequency of final phaselocked loop output is N times of reference frequency, realizes frequency multiplication.
When only a cantilever switch drop-down closure is with corresponding gate contact, the switch two dimension formed below of closure
Electron gas channel, another switch disconnected lower section is high resistance area, and raceway groove is connected with high resistance area effectively to improve HEMT's
Breakdown reverse voltage.Gating signal only on the cantilever switch of selection drop-down closure can be amplified by HEMT to be exported.From
And by the independent control to a cantilever switch, realize the amplification to individual signals, circuit has multi-functional, expands electricity
The application on road.
The GaAs base low-leakage currents double cantilever beam switch double grid HEMT frequency multipliers of the present invention are done into one below in conjunction with the accompanying drawings
Step is explained.
As shown in figure 1, the GaAs base low-leakage currents double cantilever beam switch double grid HEMT frequency multipliers of the present invention serve as a contrast including GaAs
Bottom 1, enhanced HEMT on gaas substrates, external low pass filter, voltage controlled oscillator, divider, high frequency choke are set
Circle.
HEMT includes intrinsic GaAs layers 2, intrinsic AlGaAs layers 3, N+AlGaAs layers 4, source electrode 5, drain electrode 6, grid 7, anchor area
8, cantilever switch 9, pull down pole plate 10, insulating barrier 11, through hole 12, lead 13.Wherein, source electrode 5 is grounded, and anchor area 8 is arranged on grid
The side of pole 7, drop-down pole plate 10 are arranged on below the end of cantilever switch 9, are connected to ground, and cantilever switch 9 is horizontal by anchor area 8
Above across grid.In HEMT-structure, grid 7 forms Schottky contacts, intrinsic AlGaAs layers 3 and sheet with N+AlGaAs layers 4
Levy GaAs layers 2 and form hetero-junctions.For enhanced HEMT, when gate voltage is 0, Schottky contact barrier run out of heterojunction boundary
Two-dimensional electron gas, be not turned on raceway groove.
6 output signals of HEMT drain electrodes have two kinds of working methods, and one kind is to access low pass filter by first port 14, low
Bandpass filter output access voltage controlled oscillator, voltage controlled oscillator output by the 3rd port 16 access divider, divider it is defeated
Go out signal to access on a cantilever switch 9 by anchor area 8 as feedback signal, reference signal accesses another by anchor area 8
On cantilever switch 9.Another working method of HEMT 6 output signals of drain electrode is that selection second port 15 directly exports.
Direct current biasing is acted on cantilever switch by high frequency choke coil and anchor area 8.High frequency choke coil ensures that direct current is inclined
Put and separated with AC signal, the actuation voltage of cantilever switch 9 is designed as HEMT threshold voltage.When direct current biasing is less than drop-down
Voltage, cantilever switch 9 do not contact with grid 7, and when switch is in off-state, gate voltage 0, heterojunction boundary is without two dimension electricity
Sub- gas channel, HEMT cut-offs, be advantageous to reduce grid leakage current, reduce power consumption.
When direct current biasing reaches or surpasses actuation voltage, two cantilever switch 9 are pulled down and contacted with grid 7, and switch closes
During conjunction, in the presence of gate voltage, two-dimensional electron gas is assembled in heterojunction boundary, forms raceway groove, as shown in figure 4, HEMT is turned on.
Reference signal is multiplied with feedback signal by HEMT.6 output signals that drain contain the phase information between two signals, selection
First port 14 inputs low pass filter, and low pass filter filters out the high fdrequency component in this signal, and defeated to voltage controlled oscillator
A DC voltage is sent, DC voltage can be expressed as：
Wherein K is HEMT gain coefficients, frefFor reference signal frequency, fbackFor feedback frequency signal, φ is proper phase
Difference.Voltage controlled oscillator adjusts the size of output signal frequency under the control of DC voltage.Voltage controlled oscillator output frequency can be with
Expressed by following differential representation formula：
Wherein, foFor voltage controlled oscillator output frequency, KvFor voltage controlled oscillator sensitivity.After divider, VCO
The output frequency of device is changed into original 1/N, and is used as feedback signal, re-enters HEMT.Namely：
Acted on by feedback cycle, the frequency of feedback signal is final consistent with reference signal.I.e.：
So the signal frequency of the final port 17 of voltage controlled oscillator the 4th output is N times of reference frequency, realize with reference to letter
Number frequency multiplication.
Only a cantilever switch 9 is pulled down closure, when another cantilever switch 9 is in suspension off-state, closes
The Two-dimensional electron gas channel formed below of cantilever switch 9 of conjunction, the lower section of cantilever switch 9 of disconnection is high resistance area, such as Fig. 5 institutes
Show, raceway groove is connected with high resistance area, is advantageous to improve breakdown reverse voltage.The gating signal on cantilever switch 9 only closed
It can be amplified by HEMT, amplified signal selection second port 15 exports.When the cantilever switch 9 of only loading reference signal closes
During conjunction, reference signal is amplified by HEMT, and the output frequency of second port 15 is frefAmplified signal.Feedback letter is loaded when only having
Number cantilever switch 9 when closing, feedback frequency signal is result of the pressuring controlling oscillator frequency after divider, i.e. fo/ N,
So the output frequency of second port 15 is fo/ N amplified signal.So as to by the independent control to a cantilever switch 9,
The amplification to individual signals is realized, expands the application of circuit.In addition, the cantilever switch 9 disconnected is advantageous to reduce grid
Pole leakage current, reduce power consumption.
The preparation method of the GaAs base low-leakage currents double cantilever beam switch double grid HEMT frequency multipliers of the present invention is as follows：
1) in semi-insulating p-type GaAs substrates；
2) the intrinsic GaAs layers about 500nm of epitaxial growth；
3) the intrinsic AlGaAs separation layers about 50nm of epitaxial growth；
4) N+ type AlGaAs layer about 20nm are grown, doping concentration is 1 × 1018cm-3, control thickness and doping concentration so that
HEMT pipes are enhanced；
5) N+ type GaAs thickness about 300nm are grown, doping concentration is 3.5 × 1018cm-3；
6) mesa etch isolation active area；
7) grown silicon nitride；
8) photoetching silicon nitride layer, source-drain electrode domain is carved, carries out N+ ion implantings, formed source electrode and drain electrode, remove silicon nitride；
9) photoresist is coated, photoetching removes the photoresist of electrode contact locations；
10) it is evaporated in vacuo gold germanium ni au；
11) peel off, alloying forms source, leakage Ohm contact electrode；
12) photoresist is coated, photoetching removes the photoresist of gate location；
13) growth thickness is 0.5 μm of Ti/Pt/Au；
14) metal on photoresist and photoresist is removed, forms the grid of Schottky contacts；
15) photoresist is coated, makes lead by lithography, pulls down pole plate and the window in cantilever beam anchor area；
16) Au that a layer thickness is 0.3 μm is grown；
17) photoresist is removed, forms lead, drop-down pole plate, the anchor area of cantilever beam；
18) depositing insulating layer, 0.1 μm of Si is grown using epitaxy techniquexN1-xInsulating barrier；
19) photoetching removes unnecessary insulating barrier, only retains the insulating barrier above drop-down pole plate；
20) PMGI sacrifice layers are formed by spin coating mode, then photoetching sacrifice layer, only retains the sacrifice below cantilever beam
Layer；
21) one layer of down payment for being used to electroplate is grown：Ti/Au/Ti is evaporated, as seed layer thickness 50/150/30nm；
22) photoresist is coated, makes the window of cantilever beam, anchor area and connecting line by lithography；
23) one layer of gold is electroplated, its thickness is 2 μm；
24) photoresist is removed, while removes the layer gold on photoresist；
25) titanium/gold/titanium is anti-carved, corrodes Seed Layer, forms cantilever beam and and connecting line；
26) polyimide sacrificial layer is removed, discharges MEMS cantilever beams；
27) HEMT of preparation is connected with external circuit, forms frequency multiplier.
Distinguish whether be the structure standard it is as follows：
The GaAs base low-leakage currents double cantilever beam switch double grid HEMT frequency multipliers of the present invention, reference signal and feedback signal point
It is not carried on two cantilever switch, direct current biasing is acted on cantilever switch by anchor area, the actuation voltage of cantilever beam
It is designed as HEMT threshold voltage.When two cantilever switch are in suspension off-state, gate voltage 0, HEMT cut-offs.
When two cantilever switch pull down closure state by direct current biasing, during with gate contact, two-dimensional electron gas raceway groove is formed,
HEMT is turned on.Reference signal is multiplied defeated with feedback signal by HEMT, and drain electrode output includes the phase informations of two signals, through too low
Bandpass filter, the frequency-doubled signal of N times of reference signal frequency is obtained after voltage controlled oscillator, divider feedback cycle.It is in addition, single outstanding
Arm beam switch closure, another cantilever switch high resistance area formed below disconnected, the reverse breakdown for being advantageous to improve HEMT are electric
Pressure, and the amplification to single gating signal can be realized, circuit has multifunctionality.
Claims (2)
1. a kind of GaAs base low-leakage current double cantilever beam switchs double grid frequency multiplier, it is characterised in that the HEMT of the frequency multiplier makes a living
Grow the enhanced HEMT on GaAs substrates (1), including intrinsic GaAs layers (2), intrinsic AlGaAs layers (3), N+AlGaAs layers
(4), source electrode (5), drain (6), grid (7), anchor area (8), cantilever switch (9), drop-down pole plate (10), insulating barrier (11), lead to
Hole (12), lead (13)；There are intrinsic GaAs layers (2) on GaAs substrates (1), there are intrinsic AlGaAs layers on intrinsic GaAs layers (2)
(3), there are N+AlGaAs layers (4), source electrode (5) on intrinsic AlGaAs layers (3), drain electrode (6) is located at the two of two cantilever switch (9)
Side, source electrode (5) ground connection, two grids (7) are set up in parallel, corresponded with two cantilever switch (9), cantilever switch (9)
One end be fixed in anchor area (8), the other end is suspended on grid (7), drop-down pole plate (10) be arranged on cantilever switch (9)
Below end, drop-down pole plate (10) ground connection, insulating barrier (11) is covered on drop-down pole plate (10), and direct current biasing passes through high frequency choke
Quan Hemao areas (8) are acted on cantilever switch (9), and the actuation voltage of cantilever switch (9) is designed as HEMT threshold voltage；
Lead (13) connects intrinsic GaAs layers (2) by through hole (12) respectively；
HEMT drain electrodes (6) output signal has two kinds of working methods, and one kind is that selection first port (14) is inputted to low pass filter,
Low pass filter output access voltage controlled oscillator, voltage controlled oscillator output access divider, divider by second port (16)
Output signal conduct feds back through anchor area (8) and is loaded on a cantilever switch (9), forms backfeed loop, and reference signal is led to
Guo Mao areas (8) are loaded on another cantilever switch (9), and another working method of HEMT drain electrode (6) output signal is
Selection second port (15) directly exports amplified signal.
2. GaAs base low-leakage current double cantilever beam according to claim 1 switchs double grid frequency multiplier, it is characterised in that institute
State the closure of cantilever switch (9) or disconnect and controlled by direct current biasing, when two cantilever switch (9) are reaching or surpassing
Drop-down is realized under the direct current biasing of actuation voltage, is contacted with grid (7), when switch is in closure state, under gate voltage effect, shape
Into Two-dimensional electron gas channel, HEMT conductings, reference signal is realized with feedback signal by HEMT to be multiplied, and drain electrode (6) output includes
The phase information of two signals, low pass filter is inputted through first port (14), low pass filter filters out HFS, output bag
DC voltage containing phase information, DC voltage input voltage controlled oscillator, as the defeated of control voltage regulation voltage controlled oscillator
Go out frequency, the signal after regulating frequency is transmitted to divider through the 3rd port (16), and divider output signal is as new feedback
Signal loading is on cantilever switch (9), and the result of looped cycle feedback is that feedback signal is equal with the frequency of reference signal, pressure
The 4th port (17) output frequency f of controlled oscillatoroFor N times of reference signal frequency：N×fref, realize reference signal times
Frequently；N is natural number；
When direct current biasing is less than actuation voltage, two cantilever switch (9) do not contact with grid (7), when switching off, grid electricity
Press and end for 0, HEMT, can effectively reduce grid leakage current, reduce power consumption；
When only cantilever switch (9) closure, when another cantilever switch (9) is off, the cantilever of closure
Beam switchs (9) Two-dimensional electron gas channel formed below, cantilever switch (9) high resistance area formed below of disconnection, raceway groove and high resistant
The structure of area's series connection is advantageous to improve HEMT breakdown reverse voltage, the gating signal on the cantilever switch only closed (9)
It can be amplified by HEMT, amplified signal selection second port (15) output, when the cantilever switch (9) for only loading reference signal
During closure, reference signal is amplified by HEMT, second port (15) output reference frequency frefAmplified signal, when only load
During cantilever switch (9) drop-down of feedback signal, feedback signal is amplified by HEMT, and feedback frequency signal is voltage controlled oscillator
4th port (17) output frequency foAfter divider divided by N result：fo/ N, second port (15) output frequency are fo/ N's
Amplified signal, the cantilever switch (9) of off-state are advantageous to reduce grid leakage current, reduce power consumption.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6962832B2 (en) * | 2004-02-02 | 2005-11-08 | Wireless Mems, Inc. | Fabrication method for making a planar cantilever, low surface leakage, reproducible and reliable metal dimple contact micro-relay MEMS switch |
| CN102735927A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Frequency detector based on micro-mechanical silicon-based cantilever beam and detection method |
| CN102735926A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Frequency detector based on micro-mechanical gallium arsenide-based clamped beam and detection method |
| CN103281075A (en) * | 2013-06-19 | 2013-09-04 | 东南大学 | Frequency multiplier and preparation method based on micromechanics cantilever capacitive power sensor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007242894A (en) * | 2006-03-08 | 2007-09-20 | Toshiba Corp | Semiconductor device and its manufacturing method |
| WO2007130913A2 (en) * | 2006-05-01 | 2007-11-15 | The Regents Of The University Of California | Metal-insulator-metal (mim) switching devices |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6962832B2 (en) * | 2004-02-02 | 2005-11-08 | Wireless Mems, Inc. | Fabrication method for making a planar cantilever, low surface leakage, reproducible and reliable metal dimple contact micro-relay MEMS switch |
| CN102735927A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Frequency detector based on micro-mechanical silicon-based cantilever beam and detection method |
| CN102735926A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Frequency detector based on micro-mechanical gallium arsenide-based clamped beam and detection method |
| CN103281075A (en) * | 2013-06-19 | 2013-09-04 | 东南大学 | Frequency multiplier and preparation method based on micromechanics cantilever capacitive power sensor |
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