CN105162420A - Gallium-arsenide-based low-leakage-current double-cantilever switch double-grid frequency multiplier - Google Patents
Gallium-arsenide-based low-leakage-current double-cantilever switch double-grid frequency multiplier Download PDFInfo
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Abstract
The invention gallium-arsenide-based low-leakage-current double-cantilever switch double-grid HEMT frequency multiplier, and the frequency multiplier consists of a GaAs substrate, a reinforced-type HEMT, an external low-pass filter, a voltage-controlled oscillator, a divider, and a high-frequency choke coil. A pull-down voltage of a cantilever switch is designed to be the threshold voltage of an HEMT, and the connection of the HEMT and the signal transmission are controlled through DC bias. When two cantilevers are cut off in a suspended manner, a gate voltage is zero, a trench cannot be formed, and the HEMT is cut off, thereby facilitating the reduction of the leakage current of a grid electrode. When the two cantilevers are pulled down and closed through DC bias, the bias changes the width of a schottky barrier, the concentration of two-dimensional electronic gas trenches is increased, the HEMT is connected, and reference and feedback signals are transmitted through the HEMT. An output signal of a drain electrode is repeatedly circulated through the low-pass filter, the voltage-controlled oscillator and the divider, and then a frequency multiplication signal of the reference signal is obtained. When only one cantilever switch is closed, the frequency multiplier can achieve the amplification of a single signal, and achieves a plurality of functions.
Description
Technical field
The present invention proposes GaAs (GaAs) base low-leakage current double cantilever beam switch double grid HEMT (High Electron Mobility Transistor) frequency multiplier, belong to the technical field of microelectromechanical systems.
Background technology
Frequency multiplier is by the effect of a reference signal through functional circuit, the frequency signal of the reference signal frequency integral multiple needed for generation.At present, frequency multiplier is widely used in the fields such as communication, signal transacting.Compared with the HEMT-structure in traditional circuit, high electron mobility transistor (HEMT) has higher electron mobility, and speed is faster, and efficiency is higher also can reduce power consumption etc.Current, it is simple to structure that MEMS technology also promotes circuit, the future development of smaller volume.
The present invention formally in conjunction with HEMT and MEMS technology, will propose a kind of GaAs base low-leakage current double cantilever beam switch double grid HEMT frequency multiplier.
Summary of the invention
Technical problem: the object of this invention is to provide a kind of GaAs base low-leakage current double cantilever beam switch double grid HEMT frequency multiplier.Two grid one_to_one corresponding of two cantilever beams and below.Cantilever beam plays switch in circuit, the conducting of control HEMT and the transmission of signal.
Technical scheme: the HEMT of GaAs based low-leakage current double cantilever beam switch double grid frequency multiplier of the present invention is growth enhancement mode HEMT on gaas substrates, comprise intrinsic GaAs layer, intrinsic AlGaAs layer N+AlGaAs layer, source electrode, drain electrode, grid, anchor district, cantilever switch, drop-down pole plate, insulating barrier, through hole, lead-in wire, there is intrinsic GaAs layer on gaas substrates, intrinsic GaAs layer there is intrinsic AlGaAs layer, intrinsic AlGaAs layer there is N+AlGaAs layer, source electrode, drain electrode is positioned at the both sides of two cantilever switch, source ground, two grids are set up in parallel, with two cantilever switch one_to_one corresponding, one end of cantilever switch is fixed in anchor district, the other end is suspended on grid, drop-down pole plate is arranged on below cantilever switch end, drop-down pole plate ground connection, insulating barrier covers on drop-down pole plate, direct current biasing acts on cantilever switch by high frequency choke coil and anchor district, the actuation voltage of cantilever switch is designed to the threshold voltage of HEMT, lead-in wire connects intrinsic GaAs layer respectively by through hole,
HEMT drain electrode output signal has two kinds of working methods, one is that selection first port inputs to low pass filter, low pass filter exports access voltage controlled oscillator, voltage controlled oscillator exports by the second port access divider, divider output signal is loaded on a cantilever switch as feding back through anchor district, form feedback loop, reference signal is loaded on another cantilever switch by anchor district, and the another kind of working method of the drain electrode output signal of HEMT is that selection second port directly exports amplifying signal.
Closed or the disconnection of described cantilever switch is controlled by direct current biasing, when two cantilever switch all realize drop-down under the direct current biasing reaching or surpassing actuation voltage, with gate contact, when switch is closure state, under gate voltage effect, form Two-dimensional electron gas channel, HEMT conducting, reference signal realizes being multiplied by HEMT with feedback signal, drain electrode output packet is containing the phase information of two signals, through the first port input low pass filter, low pass filter filtering HFS, output packet is containing the direct voltage of phase information, direct voltage input voltage controlled oscillator, the output frequency of voltage controlled oscillator is regulated as control voltage, signal after regulating frequency through the 3rd port transmission to divider, divider output signal is loaded on cantilever switch as new feedback signal, the result of looped cycle feedback is that feedback signal is equal with the frequency of reference signal, 4th port output frequency f of voltage controlled oscillator
ofor N times: the N × f of reference signal frequency
ref, realize the frequency multiplication of reference signal, N is natural number,
When direct current biasing is less than actuation voltage, two cantilever switch all not with gate contact, when switch disconnects, gate voltage is 0, HEMT cut-off, effectively can reduce grid leakage current, reduces power consumption;
Close when only having a cantilever switch, when another cantilever switch is in off-state, Two-dimensional electron gas channel is formed below closed cantilever switch, high resistance area is formed below the cantilever switch disconnected, the structure that raceway groove is connected with high resistance area is conducive to the reverse breakdown voltage improving HEMT, the gating signal on closed cantilever switch is only had to amplify by HEMT, amplifying signal selects the second port to export, when only having the cantilever switch loading reference signal to close, reference signal is amplified by HEMT, and the second port exports reference frequency f
refamplifying signal, when only have load the cantilever switch of feedback signal drop-down time, feedback signal is amplified by HEMT, and feedback frequency signal is voltage controlled oscillator output frequency f
odivided by the result of N: f after divider
o/ N, the second port output frequency is f
othe amplifying signal of/N, the cantilever switch of off-state is conducive to reducing grid leakage current, reduces power consumption.
Beneficial effect: GaAs base low-leakage current double cantilever beam switch double grid HEMT frequency multiplier of the present invention has following significant advantage:
1, cantilever beam plays the effect of switch in circuit, the convenient conducting of control HEMT and the transmission of signal;
2, by the control to cantilever switch, not only can realize the frequency multiplication of reference signal, can also realize to the amplification of individual signals, making Multifunctional circuit, expanded application scope;
3, HEMT combines with MEMS technology, circuit efficiency is promoted, lower power consumption, simplifies the structure, and volume is miniaturized.
Accompanying drawing explanation
Fig. 1 is the vertical view of GaAs base low-leakage current double cantilever beam switch double grid HEMT frequency multiplier of the present invention.
Fig. 2 is that the A-A ' of Fig. 1 GaAs base low-leakage current double cantilever beam switch double grid HEMT frequency multiplier is to profile.
Fig. 3 is that the B-B ' of Fig. 1 GaAs base low-leakage current double cantilever beam switch double grid HEMT frequency multiplier is to profile.
Fig. 4 be Fig. 1 GaAs base low-leakage current double cantilever beam switch double grid HEMT two cantilever switch all drop-down time raceway groove schematic diagram.
Fig. 5 is the raceway groove schematic diagram of Fig. 1 GaAs base low-leakage current double cantilever beam switch double grid HEMT when only having a cantilever switch drop-down.
Have in figure: GaAs substrate 1, intrinsic GaAs layer 2, intrinsic AlGaAs layer 3, N+AlGaAs layer 4, source electrode 5, drain electrode 6, grid 7, anchor district 8, cantilever switch 9, drop-down pole plate 10, insulating barrier 11, through hole 12, lead-in wire the 13, first port 14, second port one the 5, three port one the 6, four port one 7.
Embodiment
GaAs base low-leakage current double cantilever beam switch double grid HEMT frequency multiplier of the present invention.Comprise GaAs substrate, enhancement mode HEMT, and external low pass filter, voltage controlled oscillator, divider, high frequency choke coil; Wherein HEMT growth on gaas substrates, comprises intrinsic GaAs layer, intrinsic AlGaAs layer, N+AlGaAs layer; Source electrode, drain and gate.Grid and N+AlGAs layer form Schottky contacts, and intrinsic GaAs layer and intrinsic AlGaAs layer form heterojunction.Anchor district is positioned at grid side, and cantilever switch is across on grid by anchor district.Be provided with drop-down pole plate below cantilever beam end, drop-down pole plate ground connection, insulating barrier covers on drop-down pole plate.
Reference signal and feedback signal are loaded on two cantilever switch respectively by anchor district.Direct current biasing is acted on cantilever switch by high frequency choke coil and anchor district.High frequency choke coil ensures that AC signal and direct current biasing separate.
The actuation voltage of cantilever switch is designed to the threshold voltage of HEMT.When direct current biasing is less than actuation voltage, cantilever switch not with gate contact, when switch disconnects, grid voltage is that 0, HEMT cannot conducting, is conducive to reducing grid leakage current, reduces power consumption.
When direct current biasing reaches or surpasses actuation voltage, when two cantilever switch are all with gate contact, switch is closure state, schottky barrier width narrows under gate voltage effect, heterojunction surface forms Two-dimensional electron gas channel, and HEMT conducting, reference signal is multiplied by HEMT with feedback signal.Drain electrode outputs signal the phase information contained between two signals, and after low pass filter, high fdrequency component by filtering, and carries a direct voltage to voltage controlled oscillator, and voltage controlled oscillator output signal frequency is controlled voltage-regulation.Voltage controlled oscillator output signal is after divider, and in frequency, the change of 1/N occurs correspondence, and as feedback signal, re-enters cantilever switch, and through the effect of loop, feedback signal is equal with reference signal frequency.The signal frequency that final phase-locked loop exports is N times of reference frequency, realizes frequency multiplication.
When only have cantilever switch drop-down closed with corresponding gate contact time, form Two-dimensional electron gas channel below closed switch, be high resistance area below the switch of another disconnection, raceway groove is connected with high resistance area and effectively can be improved the reverse breakdown voltage of HEMT.Only have and select the gating signal on drop-down closed cantilever switch can amplify output by HEMT.Thus by the independent control to a cantilever switch, realize the amplification to individual signals, circuit has multi-functional, expands the range of application of circuit.
Below in conjunction with accompanying drawing, GaAs base low-leakage current double cantilever beam switch double grid HEMT frequency multiplier of the present invention is further explained.
As shown in Figure 1, GaAs base low-leakage current double cantilever beam switch double grid HEMT frequency multiplier of the present invention comprises GaAs substrate 1, arranges enhancement mode HEMT on gaas substrates, external low pass filter, voltage controlled oscillator, divider, high frequency choke coil.
HEMT comprises intrinsic GaAs layer 2, intrinsic AlGaAs layer 3, N+AlGaAs layer 4, source electrode 5, drain electrode 6, grid 7, anchor district 8, cantilever switch 9, drop-down pole plate 10, insulating barrier 11, through hole 12, lead-in wire 13.Wherein, source electrode 5 ground connection, anchor district 8 is arranged on grid 7 side, and drop-down pole plate 10 is arranged on below the end of cantilever switch 9, is connected to ground, and cantilever switch 9 passes through anchor district 8 across above grid.In HEMT-structure, grid 7 and N+AlGaAs layer 4 form Schottky contacts, and intrinsic AlGaAs layer 3 and intrinsic GaAs layer 2 form heterojunction.For enhancement mode HEMT, when gate voltage is 0, Schottky contact barrier run out of the two-dimensional electron gas of heterojunction boundary, does not have communication channel.
HEMT drain electrode 6 output signal has two kinds of working methods, one accesses low pass filter by the first port 14, low pass filter exports access voltage controlled oscillator, voltage controlled oscillator exports and accesses divider by the 3rd port one 6, the output signal of divider accesses on a cantilever switch 9 as feedback signal by anchor district 8, and reference signal is accessed on another cantilever switch 9 by anchor district 8.The another kind of working method of HEMT drain electrode 6 output signal is that selection second port one 5 directly exports.
Direct current biasing is acted on cantilever switch by high frequency choke coil and anchor district 8.High frequency choke coil ensures that direct current biasing and AC signal separate, and the actuation voltage of cantilever switch 9 is designed to the threshold voltage of HEMT.When direct current biasing is less than actuation voltage, cantilever switch 9 does not contact with grid 7, and when switch is off-state, gate voltage is 0, and heterojunction boundary does not have Two-dimensional electron gas channel, and HEMT ends, and is conducive to reducing grid leakage current, reduces power consumption.
When direct current biasing reaches or surpasses actuation voltage, two cantilever switch 9 are all drop-down to be contacted with grid 7, and when switch closes, under the effect of gate voltage, two-dimensional electron gas is assembled at heterojunction boundary, forms raceway groove, as shown in Figure 4, and HEMT conducting.Reference signal is multiplied by HEMT with feedback signal.Drain electrode 6 outputs signal the phase information contained between two signals, and select the first port 14 to input low pass filter, low pass filter by the high fdrequency component filtering in this signal, and carries a direct voltage to voltage controlled oscillator, and direct voltage can be expressed as:
Wherein K is HEMT gain coefficient, f
reffor reference signal frequency, f
backfor feedback frequency signal, φ is that proper phase is poor.Voltage controlled oscillator under the control of direct voltage, the size of regulation output signal frequency.Voltage controlled oscillator output frequency can be expressed by following differential representation formula:
Wherein, f
ofor voltage controlled oscillator output frequency, K
vfor voltage controlled oscillator sensitivity.After divider, the output frequency of voltage controlled oscillator becomes original 1/N, and as feedback signal, re-enters HEMT.Namely:
Through feedback ringing, the frequency final sum reference signal of feedback signal is consistent.That is:
So the signal frequency that final voltage controlled oscillator the 4th port one 7 exports is N times of reference frequency, realizes the frequency multiplication of reference signal.
Only has a cantilever switch 9 by drop-down closed, when another cantilever switch 9 is in suspension off-state, Two-dimensional electron gas channel is formed below closed cantilever switch 9, be high resistance area below the cantilever switch 9 disconnected, as shown in Figure 5, raceway groove is connected with high resistance area, is conducive to improving reverse breakdown voltage.Only have the gating signal on closed cantilever switch 9 can be amplified by HEMT, amplifying signal selects the second port one 5 to export.When only having the cantilever switch 9 loading reference signal to close, reference signal is amplified by HEMT, and the second port one 5 output frequency is f
refamplifying signal.When only having the cantilever switch 9 loading feedback signal to close, feedback frequency signal is the result of pressuring controlling oscillator frequency after divider, i.e. f
o/ N, so the second port one 5 output frequency is f
othe amplifying signal of/N.Thus by the independent control to a cantilever switch 9, realize the amplification to individual signals, expand the range of application of circuit.In addition, the cantilever switch 9 of disconnection is conducive to reducing grid leakage current, reduces power consumption.
The preparation method of GaAs base low-leakage current double cantilever beam switch double grid HEMT frequency multiplier of the present invention is as follows:
1) at semi-insulating P type GaAs substrate;
2) epitaxial growth intrinsic GaAs layer about 500nm;
3) epitaxial growth intrinsic AlGaAs separator is about 50nm;
4) grow N+ type AlGaAs layer about 20nm, doping content is 1 × 10
18cm
-3, control thickness and doping content, make HEMT manage as enhancement mode;
5) grow N+ type GaAs thickness and be about 300nm, doping content is 3.5 × 10
18cm
-3;
6) mesa etch isolation active area;
7) grown silicon nitride;
8) photoetching silicon nitride layer, carves source-drain electrode territory, carries out N+ ion implantation, forms source electrode and drain electrode, removes silicon nitride;
9) apply photoresist, the photoresist of electrode contact locations is removed in photoetching;
10) vacuum evaporation gold germanium nickel/gold;
11) peel off, alloying forms source, leaks Ohm contact electrode;
12) apply photoresist, the photoresist of gate location is removed in photoetching;
13) growth thickness is 0.5 μm of Ti/Pt/Au;
14) remove the metal on photoresist and photoresist, form the grid of Schottky contacts;
15) apply photoresist, make lead-in wire by lithography, the window in drop-down pole plate and cantilever beam anchor district;
16) Au that a layer thickness is 0.3 μm is grown;
17) remove photoresist, form the anchor district of lead-in wire, drop-down pole plate, cantilever beam;
18) depositing insulating layer, application epitaxy technique grows the Si of 0.1 μm
xn
1-xinsulating barrier;
19) unnecessary insulating barrier is removed in photoetching, only retains the insulating barrier above drop-down pole plate;
20) form PMGI sacrifice layer by spin coating mode, then photoetching sacrifice layer, only retain the sacrifice layer below cantilever beam;
21) down payment of one deck for electroplating is grown: evaporation Ti/Au/Ti, as seed layer thickness 50/150/30nm;
22) apply photoresist, make cantilever beam by lithography, the window of anchor district and connecting line;
23) electroplate one deck gold, its thickness is 2 μm;
24) remove photoresist, remove the layer gold on photoresist simultaneously;
25) anti-carve titanium/gold/titanium, corrosion Seed Layer, formed cantilever beam and and connecting line;
26) polyimide sacrificial layer is removed, release MEMS cantilever beam;
27) HEMT of preparation is connected with external circuit, forms frequency multiplier.
Whether distinguish is that the standard of this structure is as follows:
GaAs base low-leakage current double cantilever beam switch double grid HEMT frequency multiplier of the present invention, reference signal and feedback signal are carried on two cantilever switch respectively, direct current biasing acts on cantilever switch by anchor district, and the actuation voltage of cantilever beam is designed to the threshold voltage of HEMT.When two cantilever switch are all in suspension off-state, gate voltage is 0, HEMT cut-off.When two cantilever switch are all by the drop-down closure state of direct current biasing, during with gate contact, two-dimensional electron gas raceway groove is formed, HEMT conducting.Reference signal is multiplied defeated with feedback signal by HEMT, drain electrode output packet, containing the phase information of two signals, through low pass filter, obtains reference signal frequency N frequency-doubled signal doubly after the circulation of voltage controlled oscillator, divider feedback.In addition, single cantilever switch closes, and forms high resistance area below another cantilever switch disconnected, and be conducive to the reverse breakdown voltage improving HEMT, and can realize the amplification to single gating signal, circuit has multifunctionality.
Claims (2)
1. a GaAs based low-leakage current double cantilever beam switch double grid frequency multiplier, is characterized in that the HEMT of this frequency multiplier is the enhancement mode HEMT of growth on GaAs substrate (1), comprises intrinsic GaAs layer (2), intrinsic AlGaAs layer (3), N+AlGaAs layer (4), source electrode (5), drain electrode (6), grid (7), anchor district (8), cantilever switch (9), drop-down pole plate (10), insulating barrier (11), through hole (12), lead-in wire (13), GaAs substrate (1) has intrinsic GaAs layer (2), intrinsic GaAs layer (2) there is intrinsic AlGaAs layer (3), intrinsic AlGaAs layer (3) there is N+AlGaAs layer (4), source electrode (5), drain electrode (6) is positioned at the both sides of two cantilever switch (9), source electrode (5) ground connection, two grids (7) are set up in parallel, with two cantilever switch (9) one_to_one corresponding, one end of cantilever switch (9) is fixed in anchor district (8), the other end is suspended on grid (7), drop-down pole plate (10) is arranged on below cantilever switch (9) end, drop-down pole plate (10) ground connection, insulating barrier (11) covers on drop-down pole plate (10), direct current biasing acts on cantilever switch (9) by high frequency choke coil and anchor district (8), the actuation voltage of cantilever switch (9) is designed to the threshold voltage of HEMT, lead-in wire (13) connects intrinsic GaAs layer (2) respectively by through hole (12),
HEMT drain electrode (6) output signal has two kinds of working methods, one is that selection first port (14) inputs to low pass filter, low pass filter exports access voltage controlled oscillator, voltage controlled oscillator exports by the second port (16) access divider, divider output signal is loaded on a cantilever switch (9) as feding back through anchor district (8), form feedback loop, reference signal is loaded on another cantilever switch (9) by anchor district (8), the another kind of working method that the drain electrode (6) of HEMT outputs signal is that selection second port (15) directly exports amplifying signal.
2. GaAs based low-leakage current double cantilever beam switch double grid frequency multiplier according to claim 1, it is characterized in that the closed of described cantilever switch (9) or disconnect being controlled by direct current biasing, when two cantilever switch (9) all realize drop-down under the direct current biasing reaching or surpassing actuation voltage, contact with grid (7), when switch is closure state, under gate voltage effect, form Two-dimensional electron gas channel, HEMT conducting, reference signal realizes being multiplied by HEMT with feedback signal, drain electrode (6) output packet is containing the phase information of two signals, through the first port (14) input low pass filter, low pass filter filtering HFS, output packet is containing the direct voltage of phase information, direct voltage input voltage controlled oscillator, the output frequency of voltage controlled oscillator is regulated as control voltage, signal after regulating frequency transfers to divider through the 3rd port (16), divider output signal is loaded on cantilever switch (9) as new feedback signal, the result of looped cycle feedback is that feedback signal is equal with the frequency of reference signal, 4th port (17) output frequency f of voltage controlled oscillator
ofor N times: the N × f of reference signal frequency
ref, realize the frequency multiplication of reference signal, N is natural number,
When direct current biasing is less than actuation voltage, two cantilever switch (9) all do not contact with grid (7), and when switch disconnects, gate voltage is 0, HEMT cut-off, effectively can reduce grid leakage current, reduces power consumption;
When only having a cantilever switch (9) closing, when another cantilever switch (9) is in off-state, closed cantilever switch (9) below forms Two-dimensional electron gas channel, cantilever switch (9) below disconnected forms high resistance area, the structure that raceway groove is connected with high resistance area is conducive to the reverse breakdown voltage improving HEMT, the gating signal on closed cantilever switch (9) is only had to amplify by HEMT, amplifying signal selects the second port (15) to export, when only having the cantilever switch (9) loading reference signal closed, reference signal is amplified by HEMT, second port (15) exports reference frequency f
refamplifying signal, when only have load the cantilever switch (9) of feedback signal drop-down time, feedback signal is amplified by HEMT, and feedback frequency signal is voltage controlled oscillator output frequency f
odivided by the result of N: f after divider
o/ N, the second port (15) output frequency is f
othe amplifying signal of/N, the cantilever switch (9) of off-state is conducive to reducing grid leakage current, reduces power consumption.
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| CN103281075A (en) * | 2013-06-19 | 2013-09-04 | 东南大学 | Frequency multiplier and preparation method based on micromechanics cantilever capacitive power sensor |
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| US6962832B2 (en) * | 2004-02-02 | 2005-11-08 | Wireless Mems, Inc. | Fabrication method for making a planar cantilever, low surface leakage, reproducible and reliable metal dimple contact micro-relay MEMS switch |
| US20090032884A1 (en) * | 2006-03-08 | 2009-02-05 | Kabushiki Kaisha Toshiba | Semiconductor device, and method for manufacturing the same |
| WO2007130913A2 (en) * | 2006-05-01 | 2007-11-15 | The Regents Of The University Of California | Metal-insulator-metal (mim) switching devices |
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