CN105162328A - Metal oxide semiconductor (MOS) tube power switch circuit free of dead-time voltage - Google Patents
Metal oxide semiconductor (MOS) tube power switch circuit free of dead-time voltage Download PDFInfo
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- CN105162328A CN105162328A CN201510534399.6A CN201510534399A CN105162328A CN 105162328 A CN105162328 A CN 105162328A CN 201510534399 A CN201510534399 A CN 201510534399A CN 105162328 A CN105162328 A CN 105162328A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a metal oxide semiconductor (MOS) tube power switch circuit free of dead-time voltage. The circuit comprises a conversion module, a voltage adjusting module and a switch module, wherein the conversion module is used for converting high level of a received high-speed digital signal into positive voltage and converting low level of the high-speed digital signal into negative voltage; the voltage adjusting module is used for adjusting the voltage value of the switch module on the basis of the positive voltage or the negative voltage; and the switch module is used for controlling on/off of positive power supply or negative power supply on the basis of a voltage value adjusted by the voltage adjusting module. According to the technical scheme disclosed by the invention, the defects that an existing relay power switch contact is finite in service life and dead-time voltage of which the on/off cannot be controlled exists in power voltage are overcome; the MOS tube power switch circuit disclosed by the invention is simple and reliable in structure, high in integration level, small in size and long in service life.
Description
Technical field
The present invention relates to switching circuit, particularly relate to a kind of metal-oxide-semiconductor power switch circuit without dead zone voltage.
Background technology
Liquid crystal display screen checkout equipment, usually meeting output multi-channel power supply, every road power supply amplitude independence continuously adjustabe, electric current is maximum reaches several amperes.When starting and close liquid crystal display screen display, each power supply, must, in strict accordance with the timing requirements of specifications, take millisecond as chronomere, carry out successively powering on and power-off, otherwise cause tested liquid crystal display screen to damage possibly.Prior art, employing relay realizes the switch control rule to each road power supply usually, and loop is simple.But one is detected station on production line, within one day, will detect several thousand liquid crystal display screens, be equivalent to relay and perform several thousand switch motions, to the contact endurance of relay, make a strong impact, need regularly to take checkout equipment apart, the relay of inside is changed.
For relay contact longevity problem, someone has done certain improvement, adopts insulating gate type field effect tube (MOS) to carry out mains switch control, as shown in Figure 1.But this loop, exists certain deficiency: the Vgs magnitude of voltage of metal-oxide-semiconductor equals input power Vi, therefore, power supply input Vi had both been less than metal-oxide-semiconductor gate-to-source maximum permissible voltage, otherwise metal-oxide-semiconductor damages; Meanwhile, power supply input Vi also must be greater than the minimum cut-in voltage Vth of metal-oxide-semiconductor, otherwise metal-oxide-semiconductor cannot conducting, and namely power supply input Vi exists certain dead zone voltage, and Vi is when this scope in power supply input, and Fig. 1 loop cannot realize the switch control rule to power supply input Vi.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of metal-oxide-semiconductor power switch circuit without dead zone voltage, to overcome existing relay power switch contact restricted lifetime, and existing metal-oxide-semiconductor ON-OFF control circuit, there is the deficiency of uncontrollable dead zone voltage in supply voltage.The metal-oxide-semiconductor power switch circuit of a kind of deadband eliminating voltage is provided, this circuit structure is simple and reliable, integrated level is high, the life-span is long.
For solving the problems of the technologies described above, the present invention adopts following technical proposals
Without a metal-oxide-semiconductor power switch circuit for dead zone voltage, this circuit comprises
The low transition of high-speed digital signal, for the high level of the high-speed digital signal received is converted to positive voltage, is negative voltage by modular converter;
Voltage regulator module, based on described positive voltage or negative voltage, the magnitude of voltage of adjustment switch module;
Switch module, based on the magnitude of voltage of voltage regulator module adjustment, the break-make controlling positive supply or negative supply exports, and its operating voltage is positive voltage PV, negative voltage NV.
Preferably, described modular converter is high speed Width funtion level transferring chip U1.
Preferably, described voltage regulator module comprises the first resistance R1, the second resistance R2 and NPN transistor Q1;
One end of described first resistance R1 is electrically connected with described modular converter, the other end of described first resistance R1 is connected with the base stage of NPN transistor Q1, the emitter of described NPN transistor Q1 is electrically connected with the work negative voltage NV of modular converter, one end of described second resistance R2 is connected between the first resistance R1 and the base stage of NPN transistor Q1, and the other end of described second resistance R2 is electrically connected with the work negative voltage NV of modular converter.
Preferably, described voltage regulator module comprises the first resistance R1, the second resistance R2 and PNP transistor Q1;
One end of described first resistance R1 is electrically connected with described modular converter, the other end of described first resistance R1 is connected with the base stage of PNP transistor Q1, the emitter of described PNP transistor Q1 is electrically connected with the work positive voltage PV of modular converter, one end of described second resistance R2 is connected between the first resistance R1 and the base stage of PNP transistor Q1, and the other end of described second resistance R2 is electrically connected with the work positive voltage PV of modular converter.
Preferably, described switch module comprises the 3rd resistance R3, the 4th resistance R4 and P ditch type metal-oxide-semiconductor Q2;
Described 3rd resistance R3 and the 4th resistance R4 is connected in turn between positive supply input Vi and the collector electrode of NPN transistor Q1, the grid of described P ditch type metal-oxide-semiconductor is connected between the 3rd resistance R3 and the 4th resistance R4, the drain electrode of described P ditch type metal-oxide-semiconductor inputs Vi with positive supply and is connected, and the source electrode of described P ditch type metal-oxide-semiconductor exports Vo with power supply and is connected;
The magnitude of voltage of described adjustment switch module is the grid-source voltage Vgs of adjustment P ditch type metal-oxide-semiconductor.
Preferably, described switch module comprises the 3rd resistance R3, the 4th resistance R4 and N ditch type metal-oxide-semiconductor Q2;
Described 3rd resistance R3 and the 4th resistance R4 is connected in turn between negative supply input-Vi and the collector electrode of PNP transistor Q1, the grid of described N ditch type metal-oxide-semiconductor is connected between the 3rd resistance R3 and the 4th resistance R4, the drain electrode of described N ditch type metal-oxide-semiconductor inputs-Vi with negative supply and is connected, and the source electrode of described N ditch type metal-oxide-semiconductor exports Vo with power supply and is connected;
The magnitude of voltage of described adjustment switch module is the grid-source voltage Vgs of adjustment N ditch type metal-oxide-semiconductor.
Beneficial effect of the present invention is as follows:
Technical scheme of the present invention overcomes existing relay power switch contact restricted lifetime, and supply voltage exists the deficiency of uncontrollable dead zone voltage.Technical scheme of the present invention is simple and reliable for structure, integrated level is high, the life-span is long.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail;
Fig. 1 illustrates the schematic diagram of the switch control rule of power supply in prior art;
Fig. 2 illustrates the schematic diagram that the positive input of power switch circuit of the present invention controls;
Fig. 3 illustrates the schematic diagram that the negative input of power switch circuit of the present invention controls.
Embodiment
In order to be illustrated more clearly in the present invention, below in conjunction with preferred embodiments and drawings, the present invention is described further.Parts similar in accompanying drawing represent with identical Reference numeral.It will be appreciated by those skilled in the art that specifically described content is illustrative and nonrestrictive, should not limit the scope of the invention with this below.
As shown in Figure 2, the invention discloses a kind of metal-oxide-semiconductor power switch circuit without dead zone voltage, this circuit comprises for the high level of the high-speed digital signal received is converted to positive voltage, be the modular converter of negative voltage by the low transition of high-speed digital signal, based on described positive voltage or negative voltage, the voltage regulator module of the magnitude of voltage of adjustment switch module and the magnitude of voltage based on voltage regulator module adjustment, control the switch module of the output of positive supply or negative supply.As shown in Figure 2, described modular converter is high speed Width funtion level transferring chip U1, work positive voltage PV, work negative voltage NV.
This programme can input exporting without dead band switch of+Vi or negative supply input-Vi to positive supply and control.
When carrying out exporting control without dead band switch to positive supply input+Vi, described voltage regulator module comprises the first resistance R1, the second resistance R2 and NPN transistor Q1; One end of described first resistance R1 is electrically connected with described modular converter, the other end of described first resistance R1 is connected with the base stage of NPN transistor Q1, the emitter of described NPN transistor Q1 is electrically connected with the work negative voltage NV of modular converter, one end of described second resistance R2 is connected between the first resistance R1 and the base stage of NPN transistor Q1, and the other end of described second resistance R2 is electrically connected with the work negative voltage NV of modular converter.Described switch module comprises the 3rd resistance R3, the 4th resistance R4 and P ditch type metal-oxide-semiconductor Q2; Described 3rd resistance R3 and the 4th resistance R4 is connected in turn between positive supply input Vi and the collector electrode of NPN transistor Q1, the grid of described P ditch type metal-oxide-semiconductor is connected between the 3rd resistance R3 and the 4th resistance R4, the drain electrode of described P ditch type metal-oxide-semiconductor inputs Vi with positive supply and is connected, and the source electrode of described P ditch type metal-oxide-semiconductor exports Vo with power supply and is connected.Magnitude of voltage essence for above-mentioned adjustment switch module is the grid-source voltage Vgs of adjustment P ditch type metal-oxide-semiconductor.
When carrying out exporting control without dead band switch to negative supply input-Vi, described voltage regulator module comprises the first resistance R1, the second resistance R2 and PNP transistor Q1; One end of described first resistance R1 is electrically connected with described modular converter, the other end of described first resistance R1 is connected with the base stage of PNP transistor Q1, the emitter of described PNP transistor Q1 is electrically connected with the work positive voltage PV of modular converter, one end of described second resistance R2 is connected between the first resistance R1 and the base stage of PNP transistor Q1, and the other end of described second resistance R2 is electrically connected with the work positive voltage PV of modular converter.Described switch module comprises the 3rd resistance R3, the 4th resistance R4 and N ditch type metal-oxide-semiconductor Q2; Described 3rd resistance R3 and the 4th resistance R4 is connected in turn between negative supply input-Vi and the collector electrode of PNP transistor Q1, the grid of described N ditch type metal-oxide-semiconductor is connected between the 3rd resistance R3 and the 4th resistance R4, the drain electrode of described N ditch type metal-oxide-semiconductor inputs-Vi with negative supply and is connected, and the source electrode of described N ditch type metal-oxide-semiconductor exports Vo with power supply and is connected.Magnitude of voltage essence for above-mentioned adjustment switch module is the grid-source voltage Vgs of adjustment P ditch type metal-oxide-semiconductor.
As shown in Figure 2, the digital logic signal of 0 ~ 3.3V, after ADG3123 type high speed Width funtion level transferring chip U1 process, becoming high level is positive voltage PV, and low level is the M signal of negative voltage NV.This M signal, through resistor network R1, R2, input NPN type or PNP transistor Q1 base stage, the conducting of control Q1 and shutoff, change the magnitude of voltage at resistance R3 two ends, the namely Vgs value of P raceway groove or N-channel MOS pipe Q2, no matter whether power supply input Vi is in dead zone voltage interval, the all normally break-make of control Q2, thus the switch control rule without dead zone voltage is realized to power supply input Vi.
Below by one group of embodiment, the present invention will be further described:
In the present embodiment, when digital signal ' 1 ' or ' 0 ', after the process of U1 level transferring chip, become the wide-voltage range M signal with positive negative level: the high level of this M signal, polarity is just, amplitude equals the positive operational voltage value PV of U1; M signal low level, polarity is negative, and amplitude equals the negative operational voltage value NV of U1.
This M signal, through resistor network R1, R2, input NPN transistor Q1 base stage.The emitter of Q1, is electrically connected with negative voltage NV.
Whether P channel MOS tube Q2, by resistor network R3, R4, is electrically connected with Q1, and as switch, control positive supply input Vi and export.
1) when controller output digit signals ' 1 ':
M signal after U1 changes is high level, and magnitude of voltage equals positive voltage PV, transistor Q1 conducting, the collector electrode C of Q1 and emitter E are equivalent to short circuit, i.e. NV and R4 conducting, now, voltage on resistance R3 is exactly the grid-source voltage Vgs of Q2, according to dividing potential drop theorem:
Vgs＝R3/(R3+R4)*(Vi+|NV|)(1)
From formula (1):
A) the suitable parameter value choosing R3, R4, NV, such as makes R3<R4, | NV|<Vi, the then Vgs of metal-oxide-semiconductor Q2, be less than supply voltage Vi.
Namely: even if supply voltage Vi, much larger than the gate-to-source maximum permissible voltage of Q2, after resistor network R3, R4 dividing potential drop, now actual gate-source voltage the Vgs of Q2, still the gate-to-source maximum permissible voltage of Q2 can be less than, still be in normal working voltage, can normally control Q2 conducting, realize the switch control rule of power supply input Vi.
B) when supply voltage Vi amplitude is very little, such as Vi=0.1V, be in the dead zone voltage interval of Fig. 1 circuit, during much smaller than cut-in voltage Vth (about the 2V) of Q2, according to formula (1), if the parameter value of R3, R4, NV is chosen suitable, still can ensure that the Vgs of Q2 is greater than the cut-in voltage Vth of Q2, Q2 normally, realizes the switch control rule to power supply input Vi.
2) when controller output digit signals ' 0 '
M signal after U1 changes is low level, voltage equals negative voltage NV, transistor Q1 ends, and resistance R3, R4 does not have electric current, therefore R3 both end voltage=0V, i.e. Vgs=0V, Vgs<Vth, metal-oxide-semiconductor Q2 turn off, no matter power supply input Vi is now much, is all in off state.
3) as shown in Figure 3, by the NPN transistor Q1 in Fig. 2, be replaced by PNP transistor, the metal-oxide-semiconductor Q2 of P raceway groove, is replaced by N-channel MOS pipe, the emitter voltage of transistor Q1, by negative pressure NV, become malleation PV, by the control principle that above-mentioned positive supply is identical, can realize controlling exporting without dead band switch of negative supply input Vi.
Width funtion level transferring chip is adopted in this programme, chip can to maximum 8 passages, switching sequence independently digital signal process, export 8 channel width voltage intermediate signal, through voltage regulator module and switch module, realize the switch control rule of maximum 8 passage positive-negative power inputs, number of chips is few, and integrated level is high, and volume is little.
In sum, technical scheme of the present invention overcomes existing relay power switch contact restricted lifetime, and supply voltage exists the deficiency of uncontrollable dead zone voltage.Technical scheme of the present invention is simple and reliable for structure, integrated level is high, volume is little, the life-span is long.
Obviously; the above embodiment of the present invention is only for example of the present invention is clearly described; and be not the restriction to embodiments of the present invention; for those of ordinary skill in the field; can also make other changes in different forms on the basis of the above description; here cannot give exhaustive to all execution modes, every belong to technical scheme of the present invention the apparent change of extending out or variation be still in the row of protection scope of the present invention.
Claims (6)
1. without a metal-oxide-semiconductor power switch circuit for dead zone voltage, it is characterized in that, this circuit comprises
The low transition of high-speed digital signal, for the high level of the high-speed digital signal received is converted to positive voltage, is negative voltage by modular converter;
Voltage regulator module, based on described positive voltage or negative voltage, the magnitude of voltage of adjustment switch module;
Switch module, based on the magnitude of voltage of voltage regulator module adjustment, the break-make controlling positive supply or negative supply exports., its operating voltage is positive voltage PV, negative voltage NV.
2. metal-oxide-semiconductor power switch circuit according to claim 1, is characterized in that, described modular converter is high speed Width funtion level transferring chip U1.
3. metal-oxide-semiconductor power switch circuit according to claim 1, is characterized in that, described voltage regulator module comprises the first resistance R1, the second resistance R2 and NPN transistor Q1;
One end of described first resistance R1 is electrically connected with described modular converter, the other end of described first resistance R1 is connected with the base stage of NPN transistor Q1, the emitter of described NPN transistor Q1 is electrically connected with the work negative voltage NV of modular converter, one end of described second resistance R2 is connected between the first resistance R1 and the base stage of NPN transistor Q1, and the other end of described second resistance R2 is electrically connected with the work negative voltage NV of modular converter.
4. metal-oxide-semiconductor power switch circuit according to claim 1, is characterized in that, described voltage regulator module comprises the first resistance R1, the second resistance R2 and PNP transistor Q1;
One end of described first resistance R1 is electrically connected with described modular converter, the other end of described first resistance R1 is connected with the base stage of PNP transistor Q1, the emitter of described PNP transistor Q1 is electrically connected with the work positive voltage PV of modular converter, one end of described second resistance R2 is connected between the first resistance R1 and the base stage of PNP transistor Q1, and the other end of described second resistance R2 is electrically connected with the work positive voltage PV of modular converter.
5. according to metal-oxide-semiconductor power switch circuit according to claim 3, it is characterized in that, described switch module comprises the 3rd resistance R3, the 4th resistance R4 and P ditch type metal-oxide-semiconductor Q2;
Described 3rd resistance R3 and the 4th resistance R4 is connected in turn between positive supply input Vi and the collector electrode of NPN transistor Q1, the grid of described P ditch type metal-oxide-semiconductor is connected between the 3rd resistance R3 and the 4th resistance R4, the drain electrode of described P ditch type metal-oxide-semiconductor inputs Vi with positive supply and is connected, and the source electrode of described P ditch type metal-oxide-semiconductor exports Vo with power supply and is connected;
The magnitude of voltage of described adjustment switch module is the grid-source voltage Vgs of adjustment P ditch type metal-oxide-semiconductor.
6. according to metal-oxide-semiconductor power switch circuit according to claim 4, it is characterized in that, described switch module comprises the 3rd resistance R3, the 4th resistance R4 and N ditch type metal-oxide-semiconductor Q2;
Described 3rd resistance R3 and the 4th resistance R4 is connected in turn between negative supply input-Vi and the collector electrode of PNP transistor Q1, the grid of described N ditch type metal-oxide-semiconductor is connected between the 3rd resistance R3 and the 4th resistance R4, the drain electrode of described N ditch type metal-oxide-semiconductor inputs-Vi with negative supply and is connected, and the source electrode of described N ditch type metal-oxide-semiconductor exports Vo with power supply and is connected;
The magnitude of voltage of described adjustment switch module is the grid-source voltage Vgs of adjustment N ditch type metal-oxide-semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510534399.6A CN105162328B (en) | 2015-08-27 | A kind of metal-oxide-semiconductor power switch circuit of no dead zone voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510534399.6A CN105162328B (en) | 2015-08-27 | A kind of metal-oxide-semiconductor power switch circuit of no dead zone voltage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105162328A true CN105162328A (en) | 2015-12-16 |
| CN105162328B CN105162328B (en) | 2018-08-31 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106125814A (en) * | 2016-08-17 | 2016-11-16 | 珠海格力节能环保制冷技术研究中心有限公司 | Signaling conversion circuit, control circuit and DC brushless motor |
| CN106411127A (en) * | 2016-11-22 | 2017-02-15 | 郑州搜趣信息技术有限公司 | PWM modulation conversion circuit |
| WO2019153680A1 (en) * | 2018-02-06 | 2019-08-15 | 江苏华存电子科技有限公司 | Circuit for reducing output power supply drop amplitude |
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| CN104078018A (en) * | 2014-07-15 | 2014-10-01 | 苏州华兴源创电子科技有限公司 | Full-high-definition liquid crystal array drive circuit |
| CN204928579U (en) * | 2015-08-27 | 2015-12-30 | 苏州华兴源创电子科技有限公司 | MOS pipe power supply switch circuit of no blind spot voltage |
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| CN101860188A (en) * | 2010-06-07 | 2010-10-13 | 鸿富锦精密工业（深圳）有限公司 | Switch power supply circuit |
| CN102035381A (en) * | 2010-12-14 | 2011-04-27 | 上海小糸车灯有限公司 | BOOST circuit with adjusting starting voltage |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106125814A (en) * | 2016-08-17 | 2016-11-16 | 珠海格力节能环保制冷技术研究中心有限公司 | Signaling conversion circuit, control circuit and DC brushless motor |
| CN106125814B (en) * | 2016-08-17 | 2017-11-17 | 珠海格力节能环保制冷技术研究中心有限公司 | Signaling conversion circuit, control circuit and DC brushless motor |
| CN106411127A (en) * | 2016-11-22 | 2017-02-15 | 郑州搜趣信息技术有限公司 | PWM modulation conversion circuit |
| WO2019153680A1 (en) * | 2018-02-06 | 2019-08-15 | 江苏华存电子科技有限公司 | Circuit for reducing output power supply drop amplitude |
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