CN105140210B - A kind of chip-stacked interconnection material containing Pr, sub-micron TiN - Google Patents
A kind of chip-stacked interconnection material containing Pr, sub-micron TiN Download PDFInfo
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- CN105140210B CN105140210B CN201510477421.8A CN201510477421A CN105140210B CN 105140210 B CN105140210 B CN 105140210B CN 201510477421 A CN201510477421 A CN 201510477421A CN 105140210 B CN105140210 B CN 105140210B
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Abstract
The invention discloses a kind of chip-stacked interconnection material containing Pr, sub-micron TiN, belong to chip interconnection materials field.The rare earth element Pr contents of the interconnection material are 0.01~0.5%, and sub-micron TiN particles are 0.05~8%, and remaining is In.In Pr intermediate alloy powder is prepared using mechanical milling method first, secondly In Pr powder, In powder, mixed rosin resin, thixotropic agent, stabilizer, active adjuvant and activating agent are mixed and is sufficiently stirred, finally add sub-micron TiN particles, it is sufficiently stirred and prepares interconnection material of the paste containing Pr and sub-micron TiN particles, using Printing techniques salient point is prepared in chip surface, the Chip Vertical interconnection of three dimensions is realized under the conditions of certain pressure (1MPa~10MPa) and temperature (170 DEG C~260 DEG C), forms high intensity interconnection solder joint.This interconnection material has high reliability, chip-stacked available for three-dimension packaging.
Description
Technical field
The present invention relates to a kind of chip-stacked interconnection material containing Pr, sub-micron TiN, belong to chip interconnection materials field.
The marmem TiN particles of only submicron-scale can significantly improve the service life of interconnection material.The interconnection material
It is mainly used in the field of three-dimension packaging high reliability demand, is that one kind has high performance new interconnection material.
Background technology
In electronics industry, Moore's Law is considered as the developing direction for guiding electronics technologies always, but with list
The increasingly increase of one chip integration seems to make Moore's Law be difficult to be continuing with.And the appearance of three-dimensional packaging technology, then can be with
The out-of-service time of Moore's Law is significantly postponed, cause electronics industry to enter the rear mole epoch.Three-dimension packaging, i.e., by chip
In three dimensions vertically successively stack, it is possible to achieve reduce chip volume and lift the double action of data transmission bauds.
In two-dimensional package, mainly attachment process is attached, single solder joint between chip and substrate by solder joint
Failure can pass through detection and remelting realize repair.But carried out in vertical space chip-stacked for three-dimension packaging, chip
Interconnection, interconnection solder joint is hundreds of, and the failure of single solder joint can influence integrally-built reliability, and three-dimension packaging structure
Complexity, unlike two dimension the single solder joint failure of electronic device can be repaired by remelting because three-dimensional structure solder joint is difficult
Repair and require that solder joint there must be higher reliability.So the reliability of three-dimension packaging solder joint directly determines three-dimensional envelope
The service life of assembling structure.
Three-dimension packaging is chip-stacked, mainly realizes that Chip Vertical interconnects by Transient liquid phase, i.e., in certain pressure and
Under temperature conditionss, intermetallic compound solder joint, gold are formed in the counterdiffusion of solid-liquid element by low melting material-materials with high melting point
The fusion temperature of compound is higher between category, typically 300 DEG C higher than low melting material or so, it is ensured that is carrying out secondary chip key
During conjunction, the intermetallic compound interconnection solder joint between first layer chip will not melt, and so can ensure solder joint during service
Multiple bonding and the flip chip bonding in later stage of chip can be born.
For the chip-stacked bonding techniques of three-dimension packaging, mainly realize that the stacking of chip is mutual by intermetallic compound
Even, the shortcomings that but intermetallic compound has its own, is that low melting material melts under the conditions of certain temperature and pressure first
Change, during solid-liquid element counterdiffusion, it may occur that volume contraction, obvious cavitation occur in interface zone, under arms
Period, because electronic device subjects the temperature change that " on-off " bring, there is the temperature of alternation in whole inside of electronic component
, because difference of linear expansion is larger between encapsulating material, solder joint easily becomes area of stress concentration, when stress increases to necessarily
Initial failure will occur for degree solder joint.Therefore easily cause three-dimension packaging structure that early stage occurs the shortcomings that intermetallic compound solder joint
Failure.Therefore how to improve intermetallic compound welding spot reliability turns into the important topic in Electronic Packaging field.It is new by studying
The interconnection material of type can realize significantly improving for three-dimension packaging structural reliability, but the research currently for this aspect is international
Society lacks related report.
The content of the invention
The present invention provides a kind of chip-stacked interconnection material containing Pr, sub-micron TiN, is remembered using rare earth element Pr, shape
Recall alloy sub-micron TiN particles and In three's coupling, can form high intensity by three-dimension packaging bonding interconnects solder joint, can
To significantly improve three-dimension packaging reliability of structure, during one's term of military service with high service life, three-dimension packaging structure device can be met
The high reliability demand of part.
The present invention is realized with following technical scheme：A kind of chip-stacked interconnection material containing Pr, sub-micron TiN, its
Composition and mass percent are：Rare earth element Pr contents are 0.01~0.5%, and sub-micron TiN particles are 0.05~8%, remaining
For In.
The present invention can use the customary preparation methods of production composite material to obtain.
Present invention preferably employs preparation method be：In-Pr intermediate alloy powder is prepared using mechanical milling method first, its
Secondary mixing In-Pr powder, In powder, mixed rosin resin, thixotropic agent, stabilizer, active adjuvant and activating agent simultaneously fully stir
Mix, finally add sub-micron TiN particles, be sufficiently stirred and prepare interconnection material of the paste containing Pr and sub-micron TiN particles.
Using interconnection material of the paste containing Pr and sub-micron TiN particles, salient point is prepared in chip surface using Printing techniques,
The Chip Vertical interconnection of three dimensions is realized under the conditions of certain pressure (1MPa~10MPa) and temperature (170 DEG C~260 DEG C),
Form high intensity interconnection solder joint.
The critical problem that above-mentioned technical proposal mainly solves：Optimize rare earth element Pr, marmem sub-micron TiN
The material component of particle and In, obtain the interconnection material of high reliability.
The present invention mechanism be：By matching suitable interconnection material, it is sub- to prepare Pr containing rare earth element, marmem
The paste interconnection material of micron TiN particles and In, interconnection solder joint is formed by bonding technology and realizes chip-stacked interconnection.For three
Dimension encapsulation is chip-stacked, such as Cu-In-Cu bondings, forms Cu3In intermetallic compound solder joints, mutually expand in In-Cu solid-liquids element
During dissipating, solder joint can form volume contraction, cause occur substantial amounts of cavity inside solder joint.In addition during service, because handing over
The change of changing environment temperature and the mismatch of linear expansion coefficient, solder joint are easy to turn into area of stress concentration.Add rare earth element
Pr and sub-micron TiN particles, Pr can react with matrix In, break Cu-In element counterdiffusion balance systems, suppress interfacial voids
Formed, sub-micron TiN particles play a part of reinforcing inside solder joint, can improve Joint Strength, in addition memorial alloy sub-micro
Rice TiN particles have certain memory characteristic, and during solder joint stress is concentrated, sub-micron TiN particles can be used as deformation
Particle, the effect of release stress relief solder joint deformation, therefore solder joint has higher service life during service.In view of height
The performance change of intensity solder joint, the effect of rare earth element Pr and memorial alloy sub-micron TiN particles is at utmost played, so control
Rare earth element Pr contents processed are 0.01~0.5%, and sub-micron TiN particles are 0.05~8%, and remaining is In.
Compared with the prior art, the beneficial effects of the present invention are：A kind of chip-stacked interconnection containing Pr, sub-micron TiN
The high intensity interconnection solder joint that material is formed has the function that high service life and resistance to deformation, and its service life is existing metal
Between 8.6~12.6 times of compound solder joint.
Brief description of the drawings
Fig. 1 is the service life of intermetallic compound solder joint and high intensity solder joint during service.
Fig. 2 is the shear strength of intermetallic compound solder joint and high intensity solder joint.
Embodiment
The present invention and effect are further illustrated with reference to embodiment.
Material used in following 10 embodiments is：In-Pr intermediate alloy powder is prepared using mechanical milling method first,
Next mixing In-Pr powder, In powder, mixed rosin resin, thixotropic agent, stabilizer, active adjuvant and activating agent are simultaneously abundant
Stirring, sub-micron TiN particles are finally added, is sufficiently stirred and prepares interconnection material of the paste containing Pr and sub-micron TiN particles, used
Printing techniques prepare salient point in chip surface, under the conditions of certain pressure (1MPa~10MPa) and temperature (170 DEG C~260 DEG C)
The Chip Vertical interconnection of three dimensions is realized, forms high intensity interconnection solder joint.This interconnection material has high reliability, can use three-dimensional
Encapsulate chip-stacked.
Embodiment 1
A kind of chip-stacked interconnection material composition containing Pr, sub-micron TiN is：Rare earth element Pr 0.5%, sub-micron TiN
Particle 8%, surplus In.
The high intensity solder joint service life that bonding (260 DEG C, 10MPa) is formed afterwards (considers for 5400 thermal cycles or so
Test error), paste interconnection material has excellent solderability.
Embodiment 2
A kind of chip-stacked interconnection material composition containing Pr, sub-micron TiN is：Rare earth element Pr 0.01%, sub-micron
TiN particles 0.05%, surplus In.
The high intensity solder joint service life that bonding (200 DEG C, 5MPa) is formed afterwards (considers examination for 3700 thermal cycles or so
Test error), paste interconnection material has excellent solderability.
Embodiment 3
A kind of chip-stacked interconnection material composition containing Pr, sub-micron TiN is：Rare earth element Pr 0.02%, sub-micron
TiN particles 1%, surplus In.
The high intensity solder joint service life that bonding (240 DEG C, 7MPa) is formed afterwards (considers examination for 4100 thermal cycles or so
Test error), paste interconnection material has excellent solderability.
Embodiment 4
A kind of chip-stacked interconnection material composition containing Pr, sub-micron TiN is：Rare earth element Pr 0.03%, sub-micron
TiN particles 2%, surplus In.
The high intensity solder joint service life that bonding (230 DEG C, 4MPa) is formed afterwards (considers examination for 4250 thermal cycles or so
Test error), paste interconnection material has excellent solderability.
Embodiment 5
A kind of chip-stacked interconnection material composition containing Pr, sub-micron TiN is：Rare earth element Pr 0.1%, sub-micron TiN
Particle 1%, surplus In.
The high intensity solder joint service life that bonding (190 DEG C, 1MPa) is formed afterwards (considers examination for 4400 thermal cycles or so
Test error), paste interconnection material has excellent solderability.
Embodiment 6
A kind of chip-stacked interconnection material composition containing Pr, sub-micron TiN is：Rare earth element Pr 0.1%, sub-micron TiN
Particle 5%, surplus In.
The high intensity solder joint service life that bonding (210 DEG C, 3MPa) is formed afterwards (considers examination for 4650 thermal cycles or so
Test error), paste interconnection material has excellent solderability.
Embodiment 7
A kind of chip-stacked interconnection material composition containing Pr, sub-micron TiN is：Rare earth element Pr 0.2%, sub-micron TiN
Particle 8%, surplus In.
The high intensity solder joint service life that bonding (260 DEG C, 10MPa) is formed afterwards (considers for 4800 thermal cycles or so
Test error), paste interconnection material has excellent solderability.
Embodiment 8
A kind of chip-stacked interconnection material composition containing Pr, sub-micron TiN is：Rare earth element Pr 0.3%, sub-micron TiN
Particle 7%, surplus In.
The high intensity solder joint service life that bonding (220 DEG C, 6MPa) is formed afterwards (considers examination for 4750 thermal cycles or so
Test error), paste interconnection material has excellent solderability.
Embodiment 9
A kind of chip-stacked interconnection material composition containing Pr, sub-micron TiN is：Rare earth element Pr 0.4%, sub-micron TiN
Particle 8%, surplus In.
The high intensity solder joint service life that bonding (250 DEG C, 9MPa) is formed afterwards (considers examination for 5300 thermal cycles or so
Test error), paste interconnection material has excellent solderability.
Embodiment 10
A kind of chip-stacked interconnection material composition containing Pr, sub-micron TiN is：Rare earth element Pr 0.4%, sub-micron TiN
Particle 5%, surplus In.
The high intensity solder joint service life that bonding (180 DEG C, 4MPa) is formed afterwards (considers examination for 4700 thermal cycles or so
Test error), paste interconnection material has excellent solderability.
Experimental example：In the case where other compositions are constant, the service life of intermetallic compound solder joint and high intensity solder joint.
Conclusion：Addition rare earth element Pr and sub-micron TiN particles can significantly improve intermetallic compound solder joint and use the longevity
Life, for 8.6~12.6 times of intermetallic compound solder joint.
Claims (3)
- A kind of 1. chip-stacked interconnection material containing Pr, sub-micron TiN, it is characterised in that：Its composition and mass percent are：It is dilute Earth elements Pr contents are 0.01~0.5%, and sub-micron TiN particles are 0.05~8%, and remaining is In.
- A kind of 2. preparation method of paste containing Pr, sub-micron TiN chip-stacked interconnection material, it is characterised in that：Use first Mechanical milling method prepares In-Pr intermediate alloy powder, secondly mix In-Pr powder, In powder, mixed rosin resin, thixotropic agent, Stabilizer, active adjuvant and activating agent are simultaneously sufficiently stirred, and finally add sub-micron TiN particles, are sufficiently stirred and are prepared paste and contain Pr and sub-micron TiN particles interconnection material.
- 3. a kind of a kind of chip-stacked interconnection material of paste using described in claim 2 containing Pr, sub-micron TiN forms high-strength The method of degree interconnection solder joint, it is characterised in that：Using interconnection material of the paste containing Pr and sub-micron TiN particles, using spray printing skill Art prepares salient point in chip surface, and three-dimensional space is realized under the conditions of pressure is 1MPa~10MPa and temperature is 170 DEG C~260 DEG C Between Chip Vertical interconnection, formed high intensity interconnection solder joint.
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| CN201510477421.8A CN105140210B (en) | 2015-08-06 | 2015-08-06 | A kind of chip-stacked interconnection material containing Pr, sub-micron TiN |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201127965A (en) * | 2010-02-12 | 2011-08-16 | Univ Nat Pingtung Sci & Tech | Composite lead-free solder alloy composition having nano-particles |
| CN102489898A (en) * | 2011-11-30 | 2012-06-13 | 昆山成利焊锡制造有限公司 | Low-silver lead-free flux paste and preparation method thereof |
| CN102891213A (en) * | 2011-06-29 | 2013-01-23 | 屏东科技大学 | Solar cell electrode made of active solder and method thereof |
| CN103842126A (en) * | 2011-08-02 | 2014-06-04 | 阿尔法金属公司 | Solder compositions |
-
2015
- 2015-08-06 CN CN201510477421.8A patent/CN105140210B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201127965A (en) * | 2010-02-12 | 2011-08-16 | Univ Nat Pingtung Sci & Tech | Composite lead-free solder alloy composition having nano-particles |
| CN102891213A (en) * | 2011-06-29 | 2013-01-23 | 屏东科技大学 | Solar cell electrode made of active solder and method thereof |
| CN103842126A (en) * | 2011-08-02 | 2014-06-04 | 阿尔法金属公司 | Solder compositions |
| CN102489898A (en) * | 2011-11-30 | 2012-06-13 | 昆山成利焊锡制造有限公司 | Low-silver lead-free flux paste and preparation method thereof |
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