CN105097575B - The forming method of CNT three-dimensional interconnection - Google Patents
The forming method of CNT three-dimensional interconnection Download PDFInfo
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- CN105097575B CN105097575B CN201510400979.6A CN201510400979A CN105097575B CN 105097575 B CN105097575 B CN 105097575B CN 201510400979 A CN201510400979 A CN 201510400979A CN 105097575 B CN105097575 B CN 105097575B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
Abstract
The present invention proposes a kind of forming method of CNT three-dimensional interconnection, comprises the following steps：The etching through hole on device disk, in the auxiliary positive subregion etched recesses of disk；Thermal infrared absorbing material, and the catalyst film in the groove of auxiliary disk needed for deposition growing CNT are deposited in the front of auxiliary disk, wherein, infrared heat absorption material at least covers the surface for needing to grow CNT region in groove；Device disk and auxiliary disk are docked, device disk and auxiliary disk are combined as a whole；Using laser to needing the region for growing CNT to carry out local heating in groove on respective devices disk, and it is passed through reacting gas, to grow CNT in the heating location of groove, and CNT is set to enter in the through hole of device disk to form the three-dimensional interconnection using CNT as conductor.The method of the present invention can avoid damage of the carbon nanotube growth process high temperature to device circle on-chip circuit and device.
Description
Technical field
The present invention relates to microelectronics integration packaging technical field, more particularly to a kind of formation side of CNT three-dimensional interconnection
Method.
Background technology
Three-dimensionally integrated is a tool technology with broad prospects for development.By manufacturing different devices on different chips
Part, it is then using bonding techniques that multilayer chiop is three-dimensionally integrated, it is possible to achieve including processor, memory, analog circuit, RF moulds
Block, and the heterogeneous integrated chip of microelectromechanical systems and sensor, obtain multi-functional complication system.With integrated circuit
Characteristic size reduces more and more difficult, cost more and more higher, or even has viewpoint to think that three-dimensional integration technology is integrated circuit fields
Do not need characteristic size constantly reduce and be still able to keep Moore's Law development most viable technology.Three-dimensional interconnection is used for three
Electrical connection between the integrated multilayer chiop of dimension, is one of three-dimensionally integrated most crucial technology.The three-dimensional interconnection skill of main flow at present
Art is that etching depth is tens microns to hundreds of microns of blind hole on a silicon substrate, in blind hole depositing insulating layer silica,
Diffusion impervious layer TiW and copper seed layer, then realize three-dimensional interconnection using copper electroplating technology filling blind hole.The conductor of three-dimensional interconnection
Material electroplates the copper post to be formed using copper, and copper has the advantages such as electrodepositable is strong, is adapted to batch production, resistivity low.
However, there is also many shortcomings for the three-dimensional interconnection using copper post as conductor.First, the thermal stress issues of copper.Copper
Thermal coefficient of expansion is about 17ppm, and the thermal coefficient of expansion of silicon is 2.5ppm, and silica thermal coefficient of expansion is 0.5ppm.Three-dimensional collection
When being worked into system, the thermal coefficient of expansion of the copper mismatch compared with the silica and silicon substrate around copper post is serious, cause copper post,
All there is huge stress in silicon dioxide insulating layer and silicon substrate, influence the reliability and transistor performance of system.Second, copper electricity
Larger residual stress after plating itself be present, cause stress migration.This stress migration will necessarily influence the reliable of three-dimensional interconnection
Property.3rd, the reduction of three-dimensional interconnection size can cause the current density of interconnection line to be continuously increased.The increase of current density can add
The momentum-exchange of acute conductor electronics and ion causes the mass transfer of material internal, causes the electromigration of copper post, makes copper post
The generation of interior void, cause the resistance variations of material, cause current density change at material different cross section.
In order to solve the above problems, occurs the filling carbon nano-pipe inside through hole in recent years, using CNT as leading
The three-dimensional interconnection technology of body.Carbon-carbon bond in CNT is to pass through sp2The σ keys that hydridization is formed, bond energy is extremely strong, therefore carbon is received
Mitron chemical property stability, in axial direction show extremely strong mechanical property.Modulus of elasticity is 1.7~3.6TPa, about
5 to 30 times of steel, tensile strength are higher than 100GPa, are 100 times of steel.CNT has fabulous thermal conductivity vertically, with
The thermal conduction mechanism of metal etc. is different, and this good one-dimensional heat conduction of CNT depends on the mean free path of phonon, due to carbon
The mean free path of phonons of nanotube is big, and its thermal conductivity is very high, up to 2000W/mK~5800W/mK, exceeds well over heat conductivility most
Good diamond (thermal conductivity 2000W/mK).In addition, the CNT of metallicity is the good conductor of electricity, maximum carrying electric current is close
Degree is more than 109, it is more than 100 times of copper.It is basic with silica meanwhile the thermal coefficient of expansion of CNT only has 0.4ppm
It is identical, approached with silicon.These excellent characteristics, make CNT that there is the advantages of exceeding well over copper as three-dimensional interconnection conductor.
In recent years, many research institutions explore the implementation method of CNT three-dimensional interconnection.In the correlation technique of Japan
CNT three-dimensional interconnection is realized at 450 DEG C using chemical vapor deposition (CVD), but used temperature is low, generation
Carbon nanotube density is very low, and interconnection resistance is very big.Carbon is realized in the correlation technique of France at 580 DEG C also by CVD to receive
The plane interconnection of mitron.In the correlation technique of Cambridge University, carbon is realized using CVD in the TSV structure that depth-to-width ratio is 5 to 10
The three-dimensional interconnection of nanotube, the growth temperature of CNT is 650 DEG C.Adopted in the correlation technique of the Chalms Polytechnics of Sweden
Sent out with CVD realizes CNT three-dimensional interconnection at 700 DEG C.Johan Liu etc. also proposed a kind of based on CNT transfer
TSV interconnection ways of realization, realize that TSV interconnection is bonded with substrate.Ting Xu of Singapore etc. also use CVD method 700
Interconnection is realized in deep 100 μm wide 30-60 μm TSV structure at DEG C, K.Ghosh etc. also achieves CNT at high temperature
Interconnection, its TSV structure is only deep 10 μm wide 2.5 μm, and this its size for three-dimensionally integrated is far from enough.
Although above-mentioned work achieves progress, the growth of CNT needs device total being placed in high temperature
In.In order to realize preferable CNT performance, the temperature required for carbon nano tube growth is usually required more than 650 DEG C.But
When temperature is more than 450 DEG C, high temperature can destroy existing cmos circuit, and below CMOS safety lines of the temperature less than 450 DEG C, institute
The CNT poor performance of growth.
The content of the invention
It is contemplated that at least solves one of technical problem in above-mentioned correlation technique to a certain extent.
Therefore, it is an object of the invention to provide a kind of forming method of CNT three-dimensional interconnection, this method can be kept away
Exempt from the damage that carbon nanotube growth process high temperature justifies on-chip circuit and device to device.
To achieve these goals, embodiments of the invention propose a kind of forming method of CNT three-dimensional interconnection,
Comprise the following steps：Choose device disk to be processed and aid in disk accordingly, the etching through hole on the device disk,
The auxiliary positive subregion etched recesses of disk, wherein, the through hole runs through the thickness of the device disk, described recessed
Surface of the surface of groove less than the auxiliary disk；In the front deposition thermal infrared absorbing material of the auxiliary disk, and in institute
The catalyst film needed for deposition growing CNT in the groove of auxiliary disk is stated, wherein, the infrared heat absorption material is extremely
The surface for needing to grow CNT region in the groove is covered less；The device disk and auxiliary disk are docked,
So that the device disk and auxiliary disk to be combined as a whole, wherein, the device disk and the auxiliary disk with reference to after
Groove between formed a gap；Need to grow carbon nanometer on the device disk to corresponding in the groove using laser
The region of pipe carries out local heating, and is passed through reacting gas, to grow CNT in the heating location of the groove, and makes institute
The through hole for stating CNT into the device disk is interior to form the three-dimensional interconnection using the CNT as conductor.
The forming method of CNT three-dimensional interconnection according to embodiments of the present invention, in device disk etching through hole, auxiliary
Disk etched recesses are helped, and it is thin in the catalyst needed for the infrared heat absorption material of auxiliary disk surfaces deposition and growth CNT
Film, and device disk is aligned and is combined as a whole with auxiliary disk, the groove of auxiliary disk is heated using laser, is passed through reaction
CNT is grown in groove surfaces after gas, and CNT is entered the through hole of device disk and is formed using CNT to lead
The three-dimensional interconnection of body.This method utilizes non-contact laser local heating, can avoid carbon nanotube growth process high temperature to device
Part justifies the damage of on-chip circuit and device.
In addition, the forming method of CNT three-dimensional interconnection according to the above embodiment of the present invention can also be with following attached
The technical characteristic added：
In some instances, boss is carried in the groove of the auxiliary disk, the height of the boss is less than the auxiliary
The height of the non-etch areas of disk.
In some instances, the position of the boss and the position correspondence of the through hole of the device disk.
In some instances, in addition to：The opening position etching of CNT is not grown in the groove of the auxiliary disk
Through the through hole of the auxiliary wafer thickness.
In some instances, the method device disk and auxiliary disk being combined as a whole is using high polymer material
Or bonding techniques of the metal as bonded layer.
In some instances, the infrared heat absorption material is silica or silicon nitride film.
In some instances, the method for the local heating is the back side heating institute using laser from the auxiliary disk
State the groove of auxiliary disk.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become in the description from combination accompanying drawings below to embodiment
Substantially and it is readily appreciated that, wherein：
Fig. 1 is the flow chart of the forming method of CNT three-dimensional interconnection according to an embodiment of the invention；
Fig. 2 is the schematic diagram of according to embodiments of the present invention 1 device disk；
Fig. 3 is the schematic diagram of according to embodiments of the present invention 1 auxiliary disk；
Fig. 4 is the schematic diagram after according to embodiments of the present invention 1 device disk manufacture through hole；
Fig. 5 is that according to embodiments of the present invention 2 auxiliary circle piece etched recesses, the infrared heat absorption material of deposition and growth carbon is received
The schematic diagram of the catalyst film of mitron；
Fig. 6 is according to embodiments of the present invention 1 device disk and the structural representation after auxiliary wafer bonding；
Fig. 7 is according to embodiments of the present invention 1 carbon nanotube growth process schematic diagram；
Fig. 8 is the structural representation of the according to embodiments of the present invention 2 auxiliary disk with boss；
Fig. 9 is the according to embodiments of the present invention 2 infrared heat absorption material of the deposition of the auxiliary disk with boss and carbon nanometer
Schematic diagram after pipe growth catalyst film；
Figure 10 be according to embodiments of the present invention 2 by aid in disk combined with device disk after schematic diagram；
Figure 11 is the growth course schematic diagram of according to embodiments of the present invention 2 CNT；
Figure 12 is the schematic diagram of the according to embodiments of the present invention 3 fluted auxiliary disk with through hole of band；And
Figure 13 is the schematic diagram of the according to embodiments of the present invention 3 auxiliary disk growth CNT with through hole.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, is only used for explaining the present invention, and is not considered as limiting the invention.
The forming method of CNT three-dimensional interconnection according to embodiments of the present invention is described below in conjunction with accompanying drawing.
Fig. 1 is the flow chart of the forming method of CNT three-dimensional interconnection according to an embodiment of the invention.Such as Fig. 1 institutes
Show, this method comprises the following steps：
Step S101：Choose device disk to be processed and aid in disk accordingly, the etching through hole on device disk,
The positive subregion etched recesses of disk are aided in, wherein, through hole runs through the thickness of device disk, and the surface of groove is less than auxiliary
The surface of disk.In other words, i.e., the device disk for needing to manufacture CNT three-dimensional interconnection and auxiliary disk are chosen first, generally
Device disk had completed the manufacture of integrated circuit (such as cmos circuit) before three-dimensional interconnection is manufactured, or had completed CMOS electricity
The manufacture of the preceding road technique transistor on road, but the manufacture of postchannel process metal interconnection has not been completed.
Step S102：Thermal infrared absorbing material is deposited in the front of auxiliary disk, and it is (infrared in the groove of auxiliary disk
Above heat absorption material) catalyst film needed for deposition growing CNT, wherein, infrared heat absorption material at least covers recessed
The surface in growth CNT region is needed in groove.Wherein, in one embodiment of the invention, infrared heat absorption material is for example
For silica or silicon nitride film.
Step S103：Device disk and auxiliary disk are docked, device disk and auxiliary disk are combined into one
Body, a gap is formed between the groove and device disk of the auxiliary disk with reference to after.In other words, disk and device will be aided in
It is fixed as one after disk alignment, makes to be unable to relative motion therebetween, and the two is not contacted directly in groove location.
In one embodiment of the present of invention, for example with high polymer material or metal as bonded layer bonding techniques by device disk and
Auxiliary disk is combined as a whole.
In one embodiment of the invention, aid in for example with boss in the groove of disk, the height of boss is less than auxiliary
The height of the non-etch areas of disk is helped, aids in the boss surface of disk not contact device disk surfaces after making bonding.Specifically
Ground, aid in the position of disk groove inner convex platform and the position correspondence of device disk through hole.
Step S104：The device disk being fixed together and auxiliary disk are put into the cavity of chemical vapor deposition, adopted
Local heating is carried out to the region for needing to grow CNT on respective devices disk in groove with laser, reaches growth
Temperature required for CNT, and the reacting gas needed for growth CNT is passed through, to be grown in the heating location of groove
CNT, and CNT is entered in the through hole of device disk, and pass through hole or reach the Partial Height of through hole, with shape
Into the three-dimensional interconnection using CNT as conductor.Wherein, in one embodiment of the invention, for example, to corresponding to device in groove
Needed on part disk grow CNT region carry out local heating method be using laser from auxiliary disk the back side
The groove of heating auxiliary disk, so that the position of respective devices disk through hole is heated to the temperature required for growth CNT
Degree.
Further, in one embodiment of the invention, this method also includes：In the recess region of auxiliary disk not
Grow through hole of the opening position etching through auxiliary wafer thickness of CNT.
To sum up, heated by laser, the position of respective devices disk through hole is heated to very high temperature and formed in groove
High-temperature region (such as 800 DEG C), meets the requirement of carbon nano tube growth, and CNT grows in the high-temperature region of heating.Urged by control
Form, gas flow and the chamber pressure of agent, CNT are grown to the carbon nano pipe array of in-line arrangement perpendicular to groove surfaces,
Through hole after continued growth into device disk forms CNT three-dimensional interconnection.Due to groove be heated region it is not direct with
Device disk contacts, therefore the temperature of high-temperature region can only be by conduct radiation to device disk, and this radiation efficiency is very low, therefore
The temperature of device disk is less than 450 DEG C, does not destroy the cmos circuit of device disk.Further, since laser facula very little, to groove
Heating be it is local, by aid in disk both sides pass to device disk heat it is also seldom, therefore device disk with auxiliary
The temperature in the region of disk contact is also no more than 450 DEG C.
Therefore, it is to aid in disk using local laser heating the advantages of the method for the embodiment of the present invention, and passes through auxiliary circle
The gap set between piece and device disk, avoid and heat whole device disk, so as to avoid on device disk
The destruction of cmos circuit.
For the ease of being better understood from the present invention, below in conjunction with accompanying drawing 2-13, come with specific embodiment in the present invention
The forming method for stating the CNT three-dimensional interconnection of embodiment does further specific descriptions.In this embodiment, respectively with
Exemplified by the auxiliary disk of groove, the auxiliary disk with boss and auxiliary disk with through hole, the explanation explanation present invention respectively
The idiographic flow of the forming method of the CNT three-dimensional interconnection of embodiment.
Embodiment 1
In this embodiment, CNT three-dimensional interconnection is formed using with reeded auxiliary disk.
Specifically, Fig. 2 and Fig. 3 respectively show the device disk and auxiliary disk of the present embodiment.100 be band in Fig. 2
There is the device disk of cmos circuit, wherein 100 be the substrate of disk, 101 be the surface insulation and passivation layer of circuit, and 102 be electricity
The transistor on road, 103 be the metal interconnecting wires of circuit transistor.200 be auxiliary disk in Fig. 3, and auxiliary disk can be but not
It is limited to silicon wafer.
As shown in figure 4, through hole 104 is manufactured on device disk.The optimization technique for manufacturing through hole is reaction ion deep etching
(DRIE) technology, laser processing technology can also be used.Then deposited using chemical vapor deposition (CVD) technology in through-hole side wall
Insulating barrier 105, the preferred material of insulating barrier 105 is silica, and preferred thickness is 200~1000nm.Silicon dioxide insulating layer
105 should cover the whole side wall of through hole.
As shown in figure 5, manufacture groove 201 on the surface of auxiliary disk 200.The optimization technique for manufacturing groove 201 is reaction
Ion deep etching technology, potassium hydroxide (KOH) lithographic technique can also be used.In this embodiment, the depth of groove 201 is preferred
It is worth for 2~10 μm.On the surface of auxiliary disk 200 infrared (the infrared heat absorption material of heat absorbing layer 202 is deposited using CVD technology
Material), the preferred material of infrared heat absorbing layer 202 is silicon nitride and silica, and preferred thickness is 2.5 μm.Then in auxiliary circle
The surface of piece 200 utilize sputtering technology deposition growing CNT required for catalyst film 203, catalyst 203 it is preferred
Material is iron (Fe), and preferred thickness is 4~10nm.
As shown in fig. 6, it is combined as a whole after device disk 100 is aligned with auxiliary disk 200.By the preferred of the two combination
Technology is bonding techniques, and it is high polymer material to be bonded preferable bonding material.Preferable bonding high polymer material includes
WaferBond, benzocyclobutene (BCB) or polyimides (PI) etc., the thickness preferred value of bonded layer 205 is 1~5 μm.Bonding
Low-melting-point metal can also be used, such as tin (Sn).
As shown in fig. 7, the device disk 100 after bonding and auxiliary disk 200 are put into CVD cavitys and vacuumized, profit
The part of groove 201 is heated with laser 300, the gas then passed to required for growth CNT, grows carbon nanometer
Pipe 106.Laser heating is preferably from the back side heating of auxiliary disk 200, and the optimal wavelength of laser is 10.6 μm, and preferably power is 10
~20W, preferred growth temperature are 750~800 DEG C.The preferred gas for growing CNT is methane (CH4), ethene (C2H4), second
Alkynes (C2H2), dimethylbenzene (C6H4(CH3)2), the preferred gas of carrier gas is argon gas (Ar), the preferred hydrogen (H of reducing gas2) or ammonia
(NH3).The relating to parameters such as the speed of growth of CNT and heating-up temperature, gaseous species, flow, preferred growth rate are 10 μ
m/min.Laser heat growth CNT is serial mode, and after having grown a three-dimensional interconnection, mobile laser or disk arrive down
One position continued growth.Auxiliary disk is all removed after growth.
Embodiment 2
In this embodiment, the three-dimensional interconnection of CNT is formed using the auxiliary disk with boss.
Specifically, device disk and auxiliary disk and embodiment 1 are identical used by embodiment 2, such as Fig. 2 and Fig. 3 institutes
Show, and through hole 104 and insulating barrier 105 are still manufactured on device disk 100 using being same as the method shown in Fig. 4.
As shown in figure 8, in groove 201 of the auxiliary disk 200 surface manufacture with boss 204.In this embodiment, manufacture
The method for optimizing of boss 204 and groove 201 is DRIE technologies, using twice etching method, first with mask material such as photoresist
The position of boss 204 is blocked, the depth of half is performed etching to groove 201.Then remove photoresist, while etch boss 204
With groove 201, target depth is etched into.The difference in height preferred value on the surface of boss 204 and auxiliary disk 200 surface is 2~5 μm,
The difference in height preferred value on the surface of boss 204 and the surface of groove 201 is 10~100 μm.Using the method for similar embodiment 1, auxiliary
The surface of disk 200 is helped to deposit the catalyst layer 203 required for infrared heat absorbing layer 202 and growth CNT.
As shown in figure 9, using the method for similar embodiment 1, device disk 100 is aligned and combined with auxiliary disk 200
Fixed with realizing.
As shown in Figure 10, using the method for similar embodiment 1, using laser to the heat growth CNT of boss 204.By
In boss 204 with aiding in the heat conduction path of disk 200 to be further reduced, required laser heating power further reduces,
It is preferred that laser power is 5~10W.
As shown in figure 11, using the method for similar embodiment 1, the device disk 100 after bonding and auxiliary disk 200 are put
Enter in CVD cavitys and vacuumize, the part of groove 201 is heated using LONG WAVE INFRARED laser 300, then passes to growth
Gas required for CNT, grow CNT 106.
Embodiment 3
In this embodiment, the three-dimensional interconnection of CNT is formed using the auxiliary disk with through hole.
Specifically, device disk and auxiliary disk and embodiment 1 are identical used by embodiment 3, such as Fig. 2 and Fig. 3 institutes
Show, and through hole 104 and insulating barrier 105 are still manufactured on device disk 100 using the method shown in Fig. 4.
As shown in figure 12, using DRIE technologies, etched recesses 201 and through hole 206, and profit respectively on auxiliary disk 200
Infrared heat absorbing layer 202 is deposited respectively from the front of auxiliary disk 200 with CVD technology and grows the catalyst layer of CNT
203.The size and location of through hole 206 determines according to the position of the through hole 104 on device disk 100, aids in logical on disk 200
Hole 206 will avoid relative with the through hole 104 on device disk 100.Preferred a diameter of 50~500 μm of through hole 206.
Using the alignment in similar embodiment 1 and bonding techniques, device disk 100 and auxiliary disk 200 are bonded as one
Body.
As shown in figure 13, using the method in similar embodiment 1, the groove 201 of disk 200 is being aided in using laser heating
Superficial growth CNT is simultaneously entered in the through hole 104 of device disk 100.Because the through hole 206 on auxiliary disk 200 promotes
Carbon nano tube growth gas thinks transporting in groove 201 in chamber, is favorably improved the speed of growth of CNT.
To sum up, the forming method of CNT three-dimensional interconnection according to embodiments of the present invention, in device disk etching through hole,
The catalysis needed for infrared heat absorption material and growth CNT is deposited in auxiliary circle piece etched recesses, and in auxiliary disk surfaces
Agent film, and device disk is aligned and is combined as a whole with auxiliary disk, the groove of auxiliary disk is heated using laser, is passed through
CNT is grown in groove surfaces after reacting gas, and CNT is entered the through hole of device disk and is formed with CNT
For the three-dimensional interconnection of conductor.This method utilizes non-contact laser local heating, can avoid carbon nanotube growth process high temperature
Justify the damage of on-chip circuit and device to device.
In the description of the invention, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", " on ", " under ", "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom " " interior ", " outer ", " up time
The orientation or position relationship of the instruction such as pin ", " counterclockwise ", " axial direction ", " radial direction ", " circumference " be based on orientation shown in the drawings or
Position relationship, it is for only for ease of and describes the present invention and simplify description, rather than indicates or imply that signified device or element must
There must be specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are only used for describing purpose, and it is not intended that instruction or hint relative importance
Or the implicit quantity for indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can be expressed or
Implicitly include at least one this feature.In the description of the invention, " multiple " are meant that at least two, such as two, three
It is individual etc., unless otherwise specifically defined.
In the present invention, unless otherwise clearly defined and limited, term " installation ", " connected ", " connection ", " fixation " etc.
Term should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or integrally；Can be that machinery connects
Connect or electrically connect；Can be joined directly together, can also be indirectly connected by intermediary, can be in two elements
The connection in portion or the interaction relationship of two elements, limited unless otherwise clear and definite.For one of ordinary skill in the art
For, the concrete meaning of above-mentioned term in the present invention can be understood as the case may be.
In the present invention, unless otherwise clearly defined and limited, fisrt feature can be with "above" or "below" second feature
It is that the first and second features directly contact, or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists
Second feature " on ", " top " and " above " but fisrt feature are directly over second feature or oblique upper, or be merely representative of
Fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " lower section " and " below " can be
One feature is immediately below second feature or obliquely downward, or is merely representative of fisrt feature level height and is less than second feature.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or the spy for combining the embodiment or example description
Point is contained at least one embodiment or example of the present invention.In this manual, to the schematic representation of above-mentioned term not
Identical embodiment or example must be directed to.Moreover, specific features, structure, material or the feature of description can be with office
Combined in an appropriate manner in one or more embodiments or example.In addition, in the case of not conflicting, the skill of this area
Art personnel can be tied the different embodiments or example and the feature of different embodiments or example described in this specification
Close and combine.
Although embodiments of the invention have been shown and described above, it is to be understood that above-described embodiment is example
Property, it is impossible to limitation of the present invention is interpreted as, one of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changed, replacing and modification.
Claims (7)
1. a kind of forming method of CNT three-dimensional interconnection, it is characterised in that comprise the following steps：
Choose device disk to be processed and aid in disk accordingly, the etching through hole on the device disk, in the auxiliary
The positive subregion etched recesses of disk, wherein, thickness direction of the through hole along device disk runs through the device disk,
Surface of the surface of the groove less than the auxiliary disk；
Infrared heat absorption material, and the deposition growing carbon in the groove of the auxiliary disk are deposited in the front of the auxiliary disk
Catalyst film needed for nanotube, wherein, the infrared heat absorption material, which at least covers, needs growth carbon to receive in the groove
The surface in mitron region；
The device disk and auxiliary disk are docked, the device disk and auxiliary disk are combined as a whole, its
In, the device disk with reference to after and one gap of formation between the groove of the auxiliary disk；
Local add, is carried out to corresponding to the region for needing to grow CNT on the device disk in the groove using laser
Heat, and reacting gas is passed through, to grow CNT in the heating location of the groove, and make described in the CNT entrance
To form the three-dimensional interconnection using the CNT as conductor in the through hole of device disk.
2. the forming method of CNT three-dimensional interconnection according to claim 1, it is characterised in that wherein, the auxiliary
Boss is carried in the groove of disk, the height of the boss is less than the height for aiding in the non-etch areas of disk.
3. the forming method of CNT three-dimensional interconnection according to claim 2, it is characterised in that the position of the boss
With the position correspondence of the through hole of the device disk.
4. the forming method of CNT three-dimensional interconnection according to claim 1, it is characterised in that also include：
The opening position etching of CNT is not grown in the groove of the auxiliary disk through the logical of the auxiliary wafer thickness
Hole.
5. the forming method of CNT three-dimensional interconnection according to claim 1, it is characterised in that by the device disk
The method being combined as a whole with auxiliary disk is using the bonding techniques of high polymer material or metal as bonded layer.
6. the forming method of CNT three-dimensional interconnection according to claim 1, it is characterised in that the infrared heat absorption
Material is silica or silicon nitride film.
7. the forming method of CNT three-dimensional interconnection according to claim 1, it is characterised in that the local heating
Method is the groove from the back side heating auxiliary disk of the auxiliary disk using laser.
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| CN105522278B (en) * | 2016-01-09 | 2017-06-06 | 长春理工大学 | Laser light transmission grid raw glass substrate Aided Machine scoring device and method |
| US11136666B2 (en) | 2018-08-30 | 2021-10-05 | University Of Kentucky Research Foundation | Ordered nanotubes on a two-dimensional substrate consisting of different material properties |
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