CN110648962A - Elbow interconnecting metal filling method - Google Patents
Elbow interconnecting metal filling method Download PDFInfo
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- CN110648962A CN110648962A CN201910905540.7A CN201910905540A CN110648962A CN 110648962 A CN110648962 A CN 110648962A CN 201910905540 A CN201910905540 A CN 201910905540A CN 110648962 A CN110648962 A CN 110648962A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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Abstract
The invention discloses a method for filling interconnected metal of a bent pipe, which specifically comprises the following steps: 101) a TSV hole manufacturing step, 102) a metal injection step, and 103) a filling treatment step; the invention provides a method for filling interconnecting metal of a bent pipe, which avoids the problem of adaptation of metal follow-up and a carrier due to a thermal expansion effect.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for filling interconnected metal of a bent pipe.
Background
The millimeter wave radio frequency technology is rapidly developed in the semiconductor industry, is widely applied to the fields of high-speed data communication, automobile radars, airborne missile tracking systems, space spectrum detection and imaging and the like, is expected to reach 11 billion dollars in market in 2018, and becomes a new industry. The new application puts new requirements on the electrical performance, compact structure and system reliability of the product, and the wireless transmitting and receiving system cannot be integrated on the same chip (SOC) at present, so that different chips including a radio frequency unit, a filter, a power amplifier and the like need to be integrated into a separate system to realize the functions of transmitting and receiving signals.
In the traditional packaging process, various functional chips and passive devices are mounted on a substrate, so that the occupied area is large, the reliability is poor, and the trend of more and more miniaturization of a packaging system cannot be met.
However, for the actual process, because the thermal expansion coefficients of the TSV copper column and the silicon adapter plate are different, the upper end of the copper column recessed in the adapter plate will expand or contract in the subsequent thermal process, which will have bad influence on the subsequent reliability; in addition, at present, TSV holes are manufactured firstly, then metal is filled into the TSV through an electroplating process, and if the TSV is not vertical or the TSV holes are internally provided with other shapes, the TSV structure is difficult to realize regardless of seed layer paving on the inner wall of the TSV or electroplating without the holes.
Disclosure of Invention
The invention overcomes the defects of the prior art and provides the elbow interconnecting metal filling method which avoids the problem of adaptation of metal to a carrier due to thermal expansion effect.
The technical scheme of the invention is as follows:
a method for filling interconnecting metal of a bent pipe specifically comprises the following steps:
101) TSV hole manufacturing steps: through photoetching and etching processes, TSV holes are formed in the upper surface of the carrier plate, lateral etching is added to the bottoms of the TSV holes, and expansion part spaces are formed at the bottoms of the TSV holes and are integrally spherical; depositing silicon oxide or silicon nitride on the upper surface of the carrier plate, or directly thermally oxidizing to form an insulating layer;
102) a metal injection step: putting the carrier plate processed in the step 101) in a cavity for heating, and exhausting the cavity to enable the TSV hole to reach a vacuum state; wherein, the heating temperature of the cavity is controlled between 50 ℃ and 1000 ℃;
placing low-temperature molten metal on the upper surface of the carrier plate, and applying pressure through a pressure plate to enable the low-temperature molten metal to enter the TSV holes; cooling the cavity to cool the molten metal and removing the platen;
103) filling treatment: removing excessive metal on the upper surface of the carrier plate treated in the step 102) through a CMP process, and completing filling of the elbow interconnection metal.
Furthermore, the diameter of the TSV hole ranges from 1um to 1000um, and the depth ranges from 10um to 1000 um; the thickness of the insulating layer ranges between 10nm and 100 um.
Further, the low-temperature molten metal is a metal having a melting point temperature controlled between 100 and 800 degrees.
Furthermore, the low-temperature molten metal is gallium or gallium alloy.
Further, a seed layer is manufactured on the upper surface of the carrier plate processed in the step 101) through a physical sputtering, magnetron sputtering or evaporation process, the thickness of the seed layer ranges from 1nm to 100um, the seed layer is of one-layer or multi-layer structure, and the material is one or a mixture of more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel;
and manufacturing a bonding pad on the seed layer by a photoetching electroplating process, wherein the metal thickness of the bonding pad ranges from 1nm to 100um, the bonding pad is of one-layer or multi-layer structure, and the material is one or a mixture of more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel.
Further, the device also comprises an auxiliary plate, wherein silicon oxide or silicon nitride is deposited on the upper surface of the auxiliary plate, or an insulating layer is formed by direct thermal oxidation; manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process, and manufacturing a metal interconnection line on the seed layer to form a metal pad; manufacturing a metal convex column on the upper surface of the auxiliary plate through photoetching and electroplating processes, wherein the top of the metal convex column is expanded to form a plug shape;
and bonding the auxiliary plate and the carrier plate through a bonding process, and thinning the other surface of the carrier plate to expose the bottom of the TSV hole.
Further, depositing silicon oxide or silicon nitride on the lower surface of the carrier plate treated in the step 101), or directly thermally oxidizing to form an insulating layer; manufacturing a seed layer above the insulating layer by a physical sputtering, magnetron sputtering or evaporation process; manufacturing a bonding pad on the seed layer through a photoetching electroplating process;
the silicon oxide or the silicon nitride is deposited on the upper surface of the auxiliary plate, or an insulating layer is formed by direct thermal oxidation; manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process, and manufacturing a metal interconnection line on the seed layer to form a metal pad; bonding the auxiliary plate and the carrier plate by a bonding process, and thinning the other surface of the carrier plate; wherein, the distance from the bottom of the TSV hole to the bonding surface is between 1um and 500 um.
Furthermore, the bottom of the TSV hole is enlarged to be subjected to dry etching, anisotropic etching is changed into homodromous etching, and an expansion cavity is formed at the bottom of the TSV hole.
Compared with the prior art, the invention has the advantages that: according to the invention, the low-melting-point metal is used as an interconnection medium, so that the problem of adaptation caused by a thermal expansion effect between the metal and the carrier in the following process is avoided, and meanwhile, the metal is pressed into the TSV hole under the action of vacuum pressure, so that the hole-free filling of the bent pipe can be conveniently realized without a seed layer and an electroplating process, the interconnection strength of the metal is increased, and the process cost is saved; naturally, seed layers can also be added and realized by means of an electroplating process.
Drawings
Fig. 1 is a schematic view of a carrier according to the present invention;
FIG. 2 is a schematic view of FIG. 1 with TSV holes formed therein according to the present invention;
FIG. 3 is a schematic view of FIG. 2 with an insulating layer according to the present invention;
FIG. 4 is a schematic view of the heating of FIG. 3 according to the present invention;
FIG. 5 is a schematic view of the invention shown in FIG. 4 with the injection of low temperature molten metal;
FIG. 6 is a first schematic of the present invention;
FIG. 7 is a schematic view of an auxiliary plate according to the present invention;
FIG. 8 is a schematic view of the carrier board shown in FIG. 7 according to the present invention;
FIG. 9 is a second schematic of the present invention;
FIG. 10 is a schematic diagram of a TSV hole formed after an auxiliary plate and a carrier plate are bonded according to the present invention;
FIG. 11 is a schematic view of the invention forming cavities on FIG. 10;
FIG. 12 is a schematic view of the present invention showing an insulating layer disposed on the substrate of FIG. 11;
FIG. 13 is a schematic view of the heating of FIG. 12 according to the present invention;
FIG. 14 is a schematic view of the invention shown in FIG. 13 illustrating the injection of low temperature molten metal;
FIG. 15 is a third schematic of the present invention.
The labels in the figure are: the structure comprises a carrier plate 101, TSV holes 102, an insulating layer 103, low-temperature molten metal 104 and metal posts 105.
Detailed Description
Reference will now be made in detail to the embodiments of the present invention, wherein like or similar reference numerals refer to like or similar elements or elements of similar function throughout. The embodiments described below with reference to the drawings are exemplary only, and are not intended as limitations on the present invention.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Reference numerals in the various embodiments are provided for steps of the description only and are not necessarily associated in a substantially sequential manner. Different steps in each embodiment can be combined in different sequences, so that the purpose of the invention is achieved.
The invention is further described with reference to the following figures and detailed description.
Example 1:
as shown in fig. 1 to 7, a method for filling interconnecting metal in an elbow specifically includes the following steps:
101) the TSV hole 102 manufacturing step: through photoetching and etching processes, TSV holes 102 are formed in the upper surface of the carrier plate 101, the diameter range of the TSV holes 102 is 1um to 1000um, and the depth of the TSV holes 102 is 10um to 1000 um. Lateral etching is added to the bottom of the TSV hole 102, so that an expansion part space is formed at the bottom of the TSV hole 102, and the expansion part space is spherical as a whole.
And depositing silicon oxide or silicon nitride on the upper surface of the carrier plate 101, or directly thermally oxidizing to form the insulating layer 103, wherein the thickness of the insulating layer 103 ranges from 10nm to 100 um.
102) A metal injection step: placing the carrier plate 101 processed in the step 101) in a cavity for heating, and exhausting the cavity to enable the TSV hole 102 to reach a vacuum state; wherein, the heating temperature of the cavity is controlled between 50 and 1000 ℃.
Placing low-temperature molten metal 104 on the upper surface of the carrier plate 101, and applying pressure through a pressure plate to enable the low-temperature molten metal 104 to enter the TSV holes 102; the chamber is cooled to cool the molten metal and the platens are removed. The low-temperature molten metal 104 is a metal whose melting point temperature is controlled to be 100 to 800 degrees. The low-temperature molten metal 104 is gallium or a gallium-based alloy or other low-melting-point metal.
103) Filling treatment: removing excessive metal on the upper surface of the carrier plate 101 processed in the step 102) through a CMP process, and completing filling of the elbow interconnection metal.
Example 2:
101) the TSV hole 102 manufacturing step: and depositing silicon oxide or silicon nitride on the upper surface of the carrier plate 101, or directly thermally oxidizing to form the insulating layer 103, wherein the thickness of the insulating layer 103 ranges from 10nm to 100 um. A seed layer is manufactured above the insulating layer 103 through physical sputtering, magnetron sputtering or evaporation process, the thickness of the seed layer ranges from 1nm to 100um, the seed layer is of one-layer or multi-layer structure, and the material is one or a mixture of more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel.
And manufacturing a bonding pad on the seed layer by photoetching and electroplating processes, wherein the metal thickness of the bonding pad ranges from 1nm to 100um, the bonding pad is of one-layer or multi-layer structure, and the material is one or a mixture of more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel.
Through photoetching and etching processes, TSV holes 102 are formed in the upper surface of the carrier plate 101, the diameter range of the TSV holes 102 is 1um to 1000um, and the depth of the TSV holes 102 is 10um to 1000 um.
The silicon nitride/silicon oxide/silicon nitride/; a seed layer is manufactured above the insulating layer 103 through a physical sputtering, magnetron sputtering or evaporation process, and a metal interconnection line is manufactured on the seed layer to form a metal pad. By photolithography and electroplating process, a metal pillar 105 is formed on the upper surface of the auxiliary plate, and the top of the metal pillar 105 is enlarged to form a plug shape. The insulating layer 103 in the auxiliary plate may be omitted, and the seed layer may be formed directly.
And bonding the auxiliary plate and the carrier plate 101 through a bonding process, and thinning the other surface of the carrier plate 101 to expose the bottom of the TSV hole 102.
102) A metal injection step: placing the carrier plate 101 processed in the step 101) in a cavity for heating, and exhausting the cavity to enable the TSV hole 102 to reach a vacuum state; wherein, the heating temperature of the cavity is controlled between 50 and 1000 ℃.
Placing low-temperature molten metal 104 on the upper surface of the carrier plate 101, and applying pressure through a pressure plate to enable the low-temperature molten metal 104 to enter the TSV holes 102; the chamber is cooled to cool the molten metal and the platens are removed. The low-temperature molten metal 104 is a metal whose melting point temperature is controlled to be 100 to 800 degrees. The low-temperature molten metal 104 is gallium or a gallium-based alloy or other low-melting-point metal.
103) Filling treatment: removing excessive metal on the upper surface of the carrier plate 101 processed in the step 102) through a CMP process, and completing filling of the elbow interconnection metal.
Example 3:
101) the TSV hole 102 manufacturing step: depositing silicon oxide or silicon nitride on the lower surface of the carrier plate 101, or directly thermally oxidizing to form an insulating layer 103; a seed layer is manufactured above the insulating layer 103 through a physical sputtering, magnetron sputtering or evaporation process; and manufacturing a bonding pad on the seed layer through a photoetching electroplating process. Wherein the seed layer can be removed, and the bonding pad can be directly manufactured on the insulating layer 103 through the photoetching and electroplating processes.
The silicon nitride/silicon oxide/silicon nitride/; manufacturing a seed layer above the insulating layer 103 through physical sputtering, magnetron sputtering or evaporation process, and manufacturing a metal interconnection line on the seed layer to form a metal pad; similarly, the seed layer may be removed, and the pad is directly formed on the insulating layer 103 by photolithography and electroplating processes.
The auxiliary plate and the carrier plate 101 are bonded by a bonding process.
Through photoetching and etching processes, TSV holes 102 are formed in the upper surface of a carrier plate 101, the diameter range of the TSV holes 102 is 1um to 1000um, the depth of the TSV holes 102 is 10um to 1000um, and the distance from the bottoms of the TSV holes 102 to a bonding surface is 1um to 500 um. And expanding the bottom of the TSV hole 102 for dry etching, so that the anisotropic etching is changed into the isotropic etching, and an expansion cavity is formed at the bottom of the TSV hole 102. An insulating layer 103 of silicon oxide or silicon nitride is deposited over the carrier plate 101, or directly thermally oxidized, and the thickness of the insulating layer 103 ranges from 10nm to 100 um.
102) A metal injection step: placing the carrier plate 101 processed in the step 101) in a cavity for heating, and exhausting the cavity to enable the TSV hole 102 to reach a vacuum state; wherein, the heating temperature of the cavity is controlled between 50 and 1000 ℃.
Placing low-temperature molten metal 104 on the upper surface of the carrier plate 101, and applying pressure through a pressure plate to enable the low-temperature molten metal 104 to enter the TSV holes 102; the chamber is cooled to cool the molten metal and the platens are removed. The low-temperature molten metal 104 is a metal whose melting point temperature is controlled to be 100 to 800 degrees. The low-temperature molten metal 104 is gallium or a gallium-based alloy or other low-melting-point metal.
103) Filling treatment: removing excessive metal on the upper surface of the carrier plate 101 processed in the step 102) through a CMP process, and completing filling of the elbow interconnection metal.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the spirit of the present invention, and these modifications and decorations should also be regarded as being within the scope of the present invention.
Claims (8)
1. A method for filling interconnecting metal of a bent pipe is characterized by comprising the following steps: the method specifically comprises the following steps:
101) TSV hole manufacturing steps: through photoetching and etching processes, TSV holes are formed in the upper surface of the carrier plate, lateral etching is added to the bottoms of the TSV holes, and expansion part spaces are formed at the bottoms of the TSV holes and are integrally spherical; depositing silicon oxide or silicon nitride on the upper surface of the carrier plate, or directly thermally oxidizing to form an insulating layer;
102) a metal injection step: putting the carrier plate processed in the step 101) in a cavity for heating, and exhausting the cavity to enable the TSV hole to reach a vacuum state; wherein, the heating temperature of the cavity is controlled between 50 ℃ and 1000 ℃;
placing low-temperature molten metal on the upper surface of the carrier plate, and applying pressure through a pressure plate to enable the low-temperature molten metal to enter the TSV holes; cooling the cavity to cool the molten metal and removing the platen;
103) filling treatment: removing excessive metal on the upper surface of the carrier plate treated in the step 102) through a CMP process, and completing filling of the elbow interconnection metal.
2. The elbow interconnecting metal filling method according to claim 1, wherein: the diameter of the TSV hole ranges from 1um to 1000um, and the depth ranges from 10um to 1000 um; the thickness of the insulating layer ranges between 10nm and 100 um.
3. The elbow interconnecting metal filling method according to claim 1, wherein: the low-temperature molten metal is metal with melting point temperature controlled between 100 and 800 ℃.
4. The elbow interconnecting metal filling method according to claim 3, wherein: the low-temperature molten metal adopts gallium or gallium alloy.
5. The elbow interconnecting metal filling method according to claim 1, wherein: step 101), preparing a seed layer on the upper surface of the carrier plate treated in the step through physical sputtering, magnetron sputtering or evaporation process, wherein the thickness of the seed layer ranges from 1nm to 100um, the seed layer is of one-layer or multi-layer structure, and the material is one or more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel;
and manufacturing a bonding pad on the seed layer by a photoetching electroplating process, wherein the metal thickness of the bonding pad ranges from 1nm to 100um, the bonding pad is of one-layer or multi-layer structure, and the material is one or a mixture of more of titanium, copper, aluminum, silver, palladium, gold, thallium, tin and nickel.
6. The elbow interconnecting metal filling method according to claim 5, wherein: the silicon oxide or the silicon nitride is deposited on the upper surface of the auxiliary plate, or an insulating layer is formed by direct thermal oxidation; manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process, and manufacturing a metal interconnection line on the seed layer to form a metal pad; manufacturing a metal convex column on the upper surface of the auxiliary plate through photoetching and electroplating processes, wherein the top of the metal convex column is expanded to form a plug shape;
and bonding the auxiliary plate and the carrier plate through a bonding process, and thinning the other surface of the carrier plate to expose the bottom of the TSV hole.
7. The elbow interconnecting metal filling method according to claim 1, wherein: depositing silicon oxide or silicon nitride on the lower surface of the carrier plate treated in the step 101), or directly carrying out thermal oxidation to form an insulating layer; manufacturing a seed layer above the insulating layer by a physical sputtering, magnetron sputtering or evaporation process; manufacturing a bonding pad on the seed layer through a photoetching electroplating process;
the silicon oxide or the silicon nitride is deposited on the upper surface of the auxiliary plate, or an insulating layer is formed by direct thermal oxidation; manufacturing a seed layer above the insulating layer through a physical sputtering, magnetron sputtering or evaporation process, and manufacturing a metal interconnection line on the seed layer to form a metal pad; bonding the auxiliary plate and the carrier plate by a bonding process, and thinning the other surface of the carrier plate; wherein, the distance from the bottom of the TSV hole to the bonding surface is between 1um and 500 um.
8. The elbow interconnecting metal filling method according to claim 7, wherein: and expanding the bottom of the TSV hole to perform dry etching, so that the anisotropic etching is changed into the isotropic etching, and an expansion cavity is formed at the bottom of the TSV hole.
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| CN201910905540.7A CN110648962A (en) | 2019-09-24 | 2019-09-24 | Elbow interconnecting metal filling method |
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| CN201910905540.7A CN110648962A (en) | 2019-09-24 | 2019-09-24 | Elbow interconnecting metal filling method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113543527A (en) * | 2021-07-09 | 2021-10-22 | 广东工业大学 | Filling substrate type selection method for carrier plate hole filling process and carrier plate hole filling process |
| CN113543522A (en) * | 2021-07-09 | 2021-10-22 | 广东工业大学 | Carrier plate hole filling process based on metal stamping |
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