CN105088188B - Cvd furnace, deposition process, film and semiconductor devices - Google Patents
Cvd furnace, deposition process, film and semiconductor devices Download PDFInfo
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- CN105088188B CN105088188B CN201410220005.5A CN201410220005A CN105088188B CN 105088188 B CN105088188 B CN 105088188B CN 201410220005 A CN201410220005 A CN 201410220005A CN 105088188 B CN105088188 B CN 105088188B
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Abstract
This application discloses a kind of cvd furnace, deposition process, film and semiconductor devices.Wherein, cvd furnace includes settling chamber and the multiple cassettes being vertically set in turn in settling chamber, and the bottom of settling chamber is provided with the first opening, the second opening is provided with the top of settling chamber, and cvd furnace further includes the first pipeline and the second pipeline, the first pipeline includes the first outlet pipe with the first air inlet pipeline of the first open communication and with the second open communication；Second pipeline includes the second outlet pipe with the second air inlet pipeline of the second open communication and with the first open communication；Wherein, the second air inlet pipeline during the first pipeline connection in the second pipeline and the second outlet pipe are turned off, and the first air inlet pipeline and the first outlet pipe during the second pipeline connection in the first pipeline are turned off.During using the cvd furnace deposition film, the thickness evenness that film is formed on the different wafers in cvd furnace vertically is improved.
Description
Technical field
This application involves the technical field of semiconductor integrated circuit, in particular to a kind of cvd furnace, deposition process,
Film and semiconductor devices.
Background technology
In the manufacturing process of semiconductor devices, it is often necessary to which deposition film is to form required device, example on wafer
If cvd silicon dioxide film on substrate is as gate dielectric layer, then for example on substrate deposited semiconductor film for making fin
Formula field-effect transistor (FinFET).The method of deposition film includes physical vapour deposition (PVD) (PVD) and chemical vapor deposition
(CVD), wherein the even structure of the film obtained using chemical vapor deposition method and densification, become the making of semiconductor devices
During most common method.
The common cvd furnace of chemical vapor deposition method is vertical type cvd furnace.As shown in Figure 1, existing vertical type deposition
Stove includes settling chamber 10 ', multiple cassettes 20 ' and air inlet 11 ' and gas outlet 13 '.Wherein, multiple cassettes 20 ' are along vertical side
To being set in turn in settling chamber 10 ' and each cassette 20 ' carries a wafer, air inlet 11 ' is arranged at the bottom of settling chamber 10 '
Portion, gas outlet 13 ' are arranged at the top of settling chamber 10 '.Process using the vertical type cvd furnace deposition film includes：First,
The precursor gas of film to be deposited is passed into settling chamber by air inlet；Then, the temperature and pressure in settling chamber is adjusted
Precursor gas is chemically reacted etc. parameter, generates solid thin film deposition on the wafer surface；Finally, before will be unreacted
The accessory substance that purging body or reaction produce discharges settling chamber by gas outlet.
During above-mentioned deposition film, compact structure and the thickness that film is formed on each wafer are uniform.However,
Influenced be subject to the rate distribution that gravity and gas flow, compared with the precursor gas of upper section in settling chamber, sunk
The concentration higher of the precursor gas of section below in product room, causes the thickness of film formed in settling chamber on the wafer of lower section
Degree is more than the thickness of the film formed in settling chamber on the wafer of top.At present, technical staff attempts to pass through atom stratification
CVD method (ALCVD) deposition film is learned, i.e., precursor is alternately passed into settling chamber so that each reaction
The monoatomic layer of formation is gradually deposited on wafer, but forms film on the different wafers in cvd furnace vertically
The problem of in uneven thickness, still has.
The content of the invention
The application aims to provide a kind of cvd furnace, deposition process, film and semiconductor devices, to improve in cvd furnace along perpendicular
Nogata to different wafers on form the thickness evenness of film.
To achieve these goals, this application provides a kind of cvd furnace, including settling chamber and vertically successively
The multiple cassettes being arranged in settling chamber, and the bottom of settling chamber is provided with the first opening, and second is provided with the top of settling chamber
Opening, and cvd furnace further includes the first pipeline and the second pipeline, the first pipeline includes the first air inlet pipe with the first open communication
Road and the first outlet pipe with the second open communication；Second pipeline include with the second air inlet pipeline of the second open communication with
And the second outlet pipe with the first open communication；Wherein, the second air inlet pipeline during the first pipeline connection in the second pipeline and
Second outlet pipe is turned off, and the first air inlet pipeline and the first outlet pipe during the second pipeline connection in the first pipeline close
Close.
Further, above-mentioned cvd furnace further includes air inlet and gas outlet, the first air inlet pipeline away from the first opening one
Connection forms threeway between end, the second air inlet pipe one end and air inlet away from the second opening；First outlet pipe is away from second
Connection forms threeway between one end of opening, the second air outlet pipe one end and gas outlet away from the first opening.
Further, in above-mentioned cvd furnace, connect and formed between the first air inlet pipeline, the second outlet pipe and the first opening
Threeway；Connection forms threeway between first outlet pipe, the second air inlet pipeline and the second opening.
Further, in above-mentioned cvd furnace, first switch valve is set on the first air inlet pipeline, on the first outlet pipe
Second switch valve is set, the 3rd switch valve is set on the second air inlet pipeline, goes out to set the 4th switch valve on pipeline second.
Further, it is remote in the one end of the first air inlet pipeline away from the first opening, the second air inlet pipe in above-mentioned cvd furnace
The first triple valve is set between one end of second opening and air inlet；The one end of first outlet pipe away from the second opening, second
Air outlet pipe sets the second triple valve between one end and gas outlet away from the first opening.
Further, in above-mentioned cvd furnace, the 3rd is set between the first air inlet pipeline, the second outlet pipe and the first opening
Triple valve；The 4th triple valve is set between first outlet pipe, the second air inlet pipeline and the second opening.
, should using the above-mentioned cvd furnace of the application deposition film on wafer present invention also provides a kind of deposition process
Deposition process includes：Step S1, multiple wafers are respectively placed in the cassette in cvd furnace；Step S2, close in cvd furnace
Second air inlet pipeline and the second outlet pipe, open the first air inlet pipeline and the first outlet pipe in layer-stepping cvd furnace, lead to
Enter the precursor gas of film；Step S3, the first air inlet pipeline and the first outlet pipe are closed, opens the second air inlet pipeline and second
Outlet pipe, is passed through the precursor gas of film；Step S4, wafer is taken out.
Further, in above-mentioned deposition process, step S2 is first carried out, then performs step S3；Or step S3 is first carried out, then hold
Row step S2.
Further, in above-mentioned deposition process, repeat step S2 and step S3 to form film, preferably repeat step S2 and
Step S32~10 time.
Further, in above-mentioned deposition process, deposition process is atomic layer chemical vapor deposition method, and the material of film is
Oxide, nitride or carbide.
Present invention also provides a kind of film, which is made by the above-mentioned deposition process of the application.
Present invention also provides a kind of semiconductor devices, including film, and the film is by the above-mentioned deposition process system of the application
Form.
Using the technical solution of the application, by setting with being open air inlet and from deposition from the first of the bottom of settling chamber
First pipeline of the second opening outlet at the top of room, and be open air inlet and from settling chamber from the second of the top of settling chamber
The cvd furnace of second pipeline of the first outlet outlet at top, and the first pipeline and the second pipeline in cvd furnace are alternately opened,
So that the precursor gas of film along settling chamber bottom to top direction and settling chamber top-to-bottom direction alternately
Be passed into settling chamber, thus improve formed on the different wafers in cvd furnace vertically film thickness it is uniform
Property.
Brief description of the drawings
The accompanying drawings which form a part of this application are used for providing further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation are used to explain the application, do not form the improper restriction to the application.In the accompanying drawings：
Fig. 1 shows the cross-sectional view of existing vertical type cvd furnace；
The cross-sectional view for the cvd furnace that a kind of embodiment of Fig. 2 the application is provided；
The cross-sectional view for the cvd furnace that Fig. 3 the application another embodiments are provided；
The cross-sectional view for the cvd furnace that another embodiment of Fig. 4 the application is provided；
The flow diagram for the deposition process that Fig. 5 the application embodiments are provided.
Embodiment
It should be noted that in the case where there is no conflict, the feature in embodiment and embodiment in the application can phase
Mutually combination.Describe the application in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
It should be noted that term used herein above is merely to describe embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
Be also intended to include plural form, additionally, it should be understood that, when in the present specification using belong to "comprising" and/or " bag
Include " when, it indicates existing characteristics, step, operation, device, component and/or combinations thereof.
For the ease of description, spatially relative term can be used herein, as " ... on ", " ... top ",
" ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation of sign.It should be appreciated that spatially relative term is intended to comprising the orientation except device described in figure
Outside different azimuth in use or operation.For example, if the device in attached drawing is squeezed, it is described as " in other devices
It will be positioned as " under other devices or construction after the device of part or construction top " or " on other devices or construction "
Side " or " under other devices or construction ".Thus, exemplary term " ... top " can include " ... top " and
" in ... lower section " two kinds of orientation.The device can also other different modes positioning (being rotated by 90 ° or in other orientation), and
And respective explanations are made to the opposite description in space used herein above.
As described in background technology, the thickness of film is formed on the different wafers in cvd furnace vertically
It is uneven.Present inventor is studied regarding to the issue above, it is proposed that a kind of cvd furnace.As shown in Figures 2 to 4, this is heavy
Product stove includes settling chamber 10 and the multiple cassettes 20 being vertically set in turn in settling chamber 10, and the bottom of settling chamber 10
Portion is provided with the first opening 11, and the top of settling chamber 10 is provided with the second opening 13, and the wherein cvd furnace further includes the first pipeline
With the second pipeline, the first pipeline includes with 11 the first air inlet pipelines 31 for connect of the first opening and is open with second 13 to connect
First outlet pipe 33；Second pipeline includes the second air inlet pipeline 41 connected with the second opening 13 and connects with the first opening 11
The second logical outlet pipe 43；Wherein, the second air inlet pipeline 41 and the second air outlet pipe during the first pipeline connection in the second pipeline
Road 43 is turned off, and the first air inlet pipeline 31 and the first outlet pipe 33 during the second pipeline connection in the first pipeline are turned off.
In above-mentioned cvd furnace, by setting with being open 11 air inlets and from settling chamber 10 from the first of the bottom of settling chamber 10
Top the second 13 outlets of opening the first pipeline, and be open 13 air inlets and from deposition from the second of the top of settling chamber 10
The cvd furnace of second pipeline of the first outlet outlet at the top of room 10, and alternately open the first pipeline and second in cvd furnace
Pipeline so that the precursor gas of film along settling chamber 10 bottom to top direction and settling chamber 10 top-to-bottom side
To being alternately passed into settling chamber 10, film is formed on the different wafers in cvd furnace vertically so as to improve
Thickness evenness.
Above-mentioned first pipeline and the second pipeline can be separately provided, i.e. the first air inlet pipeline 31 and the second air inlet pipeline 41 are
Two inlet channels, the first outlet pipe 33 and the second outlet pipe 43 are two outlet passageways.In order to simplify above-mentioned cvd furnace
Structure and using above-mentioned cvd furnace deposited when operating procedure, can also be by the first air inlet pipeline 31 and the second air inlet
The connection of pipeline 41 forms an inlet channel, and the first outlet pipe 33 and the second outlet pipe 43 are connected to form an outlet
Passage.At this time, in a preferred embodiment, above-mentioned cvd furnace further includes air inlet 61 and gas outlet 63, and first into
The one end of air pipe 31 away from the first opening 11, the second air inlet pipe connect between one end and air inlet 61 away from the second opening 13
Formed threeway, the first outlet pipe 33 away from second opening 13 one end, the second air outlet pipe away from first opening 11 one end and
Connection forms threeway between gas outlet 63.
Above-mentioned first air inlet pipeline, 31 and second outlet pipe 43 can be arranged separately in the first opening 11, i.e., by first
Air inlet pipeline 31 is inserted into the first opening 11 to realize that the first air inlet pipe is connected with the first opening 11, and the second air outlet pipe is inserted into
It is open to first in 11 to realize that the second air outlet pipe is connected with the first opening 11.Similarly, above-mentioned second air inlet pipeline 41 and
One outlet pipe 33 can be arranged separately in the second opening 13, i.e. the second air inlet pipeline 41 be inserted into the second opening 13 with
Realize that the second air inlet pipe 13 connect with the second opening, the first air outlet pipe be inserted into the second opening 13 with realize the first air outlet pipe with
Second opening, 13 connection.In order to simplify the structure of above-mentioned cvd furnace, in a preferred embodiment, the first air inlet pipeline
31st, connection forms threeway, the first outlet pipe 33,41 and of the second air inlet pipeline between the second outlet pipe 43 and the first opening 11
Connection forms threeway between second opening 13.
Those skilled in the art can set valve according to teachings of the present application in above-mentioned first pipeline and the second pipeline
Door, the second air inlet pipeline 41 and the second outlet pipe 43 during realizing the first pipeline connection in the second pipeline are turned off, and second
The function that the first air inlet pipeline 31 and the first outlet pipe 33 during pipeline connection in the first pipeline are turned off.A kind of preferable
In embodiment, first switch valve 51 is set on the first air inlet pipeline 31, second switch is set on the first outlet pipe 33
Valve 52, sets the 3rd switch valve 53 on the second air inlet pipeline 41, goes out to set the 4th switch valve 54 on pipeline second, it is tied
Structure basal body structure as shown in Figure 2.Above-mentioned first switch valve 51, second switch valve 52, the 3rd switch valve 53 and the 4th switch valve
54 be the valve of cut-off effect, that is, gas can be by valve when performing fighting, and gas cannot pass through valve during closing.It is excellent herein
Select in embodiment, need to only open first switch valve 51 and second switch valve 52, close the 3rd switch valve 53 and the 4th switch valve
54, you can the second air inlet pipeline 41 and the second outlet pipe 43 when realizing the first pipeline connection in the second pipeline are turned off；Together
Sample, the 3rd switch valve 53 and the 4th switch valve 54 need to be only opened, closes first switch valve 51 and second switch valve 52, you can the
The first air inlet pipeline 31 and the first outlet pipe 33 during two pipeline connections in the first pipeline are turned off.It should be noted that this
Preferred embodiment is equally applicable to the situation that above-mentioned first pipeline and the second pipeline are separately provided.
In another preferred embodiment, in the one end of above-mentioned first air inlet pipeline 31 away from the first opening 11, the
Two air inlet pipe set the first triple valve 71 between one end and air inlet 61 away from the second opening 13；In above-mentioned first outlet pipe
33 one end away from the second opening 13, the second air outlet pipe set the two or three between one end and gas outlet 63 away from the first opening 11
Port valve 72, its structure are as shown in Figure 3.Above-mentioned first triple valve 71 is internally provided with spool, when spool exists in the first triple valve 71
During the position being connected with the first air inlet pipeline 31, the first air inlet pipeline 31 is closed, the second air inlet pipeline 41 connects；When the first threeway
Spool at the position being connected with the second air inlet pipeline 41, close, the first air inlet pipeline 31 connects by the second air inlet pipeline 41 in valve 71
It is logical.Above-mentioned second triple valve 72 is internally provided with spool, when spool is connected with the first outlet pipe 33 in the second triple valve 72
Position when, the first outlet pipe 33 is closed, the second outlet pipe 43 connects；When spool goes out with second in the second triple valve 72
During the position that air pipe 43 is connected, the second outlet pipe 43 is closed, the first outlet pipe 33 connects.
In another preferred embodiment, the first air inlet pipeline 31, the second outlet pipe 43 and the first opening 11 it
Between set the 3rd triple valve 73；The 4th threeway is set between first outlet pipe 33, the second air inlet pipeline 41 and the second opening 13
Valve 74, its structure are as shown in Figure 4.Above-mentioned 3rd triple valve 73 is internally provided with spool, when in the 3rd triple valve 73 spool with
During the position that the first air inlet pipeline 31 is connected, the first air inlet pipeline 31 is closed, the second outlet pipe 43 connects；When the 3rd triple valve
Spool at the position being connected with the second outlet pipe 43, close, the first air inlet pipeline 31 connects by the second outlet pipe 43 in 73.
Above-mentioned second triple valve 72 is internally provided with spool, when in the second triple valve 72 spool in the position being connected with the first outlet pipe 33
When putting, the first outlet pipe 33 is closed, the second air inlet pipeline 41 connects；When in the second triple valve 72 spool with the second air inlet pipe
During the position that road 41 is connected, the second air inlet pipeline 41 is closed, the first outlet pipe 33 connects.
, should using the above-mentioned cvd furnace of the application deposition film on wafer present invention also provides a kind of deposition process
Deposition process includes：Step S1, multiple wafers are placed in layer-stepping cvd furnace in cassette；Step S2, layer-stepping deposition is closed
The second air inlet pipeline and the second outlet pipe in stove, open the first air inlet pipeline and the first air outlet pipe in layer-stepping cvd furnace
Road, is passed through the precursor gas of film；Step S3, the first air inlet pipeline and the first outlet pipe are closed, opens the second air inlet pipeline
With the second outlet pipe, the precursor gas of film is passed through.Step S4, wafer is taken out.
Above-mentioned deposition process is by alternately opening the first pipeline and the second pipeline in cvd furnace so that the precursor gas of film
Body is alternately passed into settling chamber along the bottom of settling chamber to the direction at top and the direction of top-to-bottom of settling chamber, from
And improve the thickness evenness that film is formed on the different wafers in cvd furnace vertically.
The illustrative embodiments according to the application are described in more detail below.However, these illustrative embodiments
It can be implemented by many different forms, and should not be construed to be limited solely to embodiments set forth herein.Should
These embodiments that are to provide understood are in order to enable disclosure herein is thoroughly and complete, and by these exemplary realities
The design for applying mode is fully conveyed to those of ordinary skill in the art.
Fig. 5 shows the flow diagram for the deposition process that the application provides, this Shen is further illustrated below in conjunction with Fig. 5
The deposition process please provided.
First, step S1 is performed, multiple wafers are placed in cvd furnace in cassette.The material of above-mentioned wafer can be monocrystalline
Silicon, silicon-on-insulator (SOI) or germanium silicon (SiGe) etc., and various devices can be formed on above-mentioned wafer, such as transistor, storage
Unit or interconnection layer etc..
After performing step S1, step S2 and step S3 is performed.Wherein, step S2 includes closing in layer-stepping cvd furnace
Second air inlet pipeline and the second outlet pipe, open the first air inlet pipeline and the first outlet pipe in layer-stepping cvd furnace, lead to
Enter the precursor gas of film, step S3 includes closing the first air inlet pipeline and the first outlet pipe, open the second air inlet pipeline and
Second outlet pipe, is passed through the precursor gas of film.At this time, by alternately opening the first pipeline and the second pipe in cvd furnace
Road so that the precursor gas of film along settling chamber bottom to top direction and settling chamber top-to-bottom direction replace
Ground is passed into settling chamber, thus improve formed on the different wafers in cvd furnace vertically film thickness it is uniform
Property.
When performing above-mentioned steps S2 and step S3, step S2 can be first carried out, then performs step S3, step can also be first carried out
Rapid S3, then perform step S2.In order to enable the film formed more even compact, in a preferred embodiment, weight
Above-mentioned steps S2 and step S3 is answered to form film.It is highly preferred that repeat step S2 and step S32~10 time are to form film.
In above-mentioned steps S2 and step S3, the method for deposition film is chemical vapor deposition method, deposits the film of formation
Can be oxide, nitride, carbide or metal.The deposition process of above-mentioned chemical vapor deposition method is：First, will wait to sink
The precursor gas of product film is passed into settling chamber by above-mentioned first air inlet pipeline or the second air inlet pipeline；Then, it is heavy to adjust
The parameters such as the temperature and pressure in product room chemically react precursor gas, generate solid thin film deposition in crystal column surface
On；Finally, the accessory substance that unreacted precursor gas or reaction produce is arranged by the first outlet pipe or the second outlet pipe
Go out settling chamber.The material of film of the parameters such as the temperature and pressure in above-mentioned deposition process to being formed is related, the skill of this area
Art personnel can set the numerical value of above-mentioned parameter according to the prior art.
In order to further improve the compactness of formed film, in a preferred embodiment, the side of deposition film
Method is atomic layer chemical vapor deposition method, and the material of the film formed is oxide, nitride or carbide.Atom stratification
Learn CVD method deposition process be：First, will be to be deposited thin by above-mentioned first air inlet pipeline or the second air inlet pipeline
The pulse of the precursor gas of film is alternately passed into settling chamber；Then, adjusting the parameters such as the temperature and pressure in settling chamber makes
Precursor gas chemically reacts, and the monoatomic layer that each reaction is formed gradually is deposited on wafer；Finally, will be unreacted
The accessory substance that precursor gas or reaction produce discharges settling chamber by the first outlet pipe or the second outlet pipe.It is above-mentioned to deposit
The material of film of the parameters such as the temperature and pressure in journey to being formed is related, alternatively, in above-mentioned deposition process in settling chamber
Pressure be 0.1-10mbar, temperature is 50~500 DEG C.
After completing above-mentioned steps S2 and step S3, step S4 is performed, wafer is taken out, that is, completes deposition process.The technique
For state of the art, details are not described herein.
Present invention also provides a kind of film, which is made by the above-mentioned deposition process of the application.Above-mentioned film
Be formed on the different wafers on the different wafers in cvd furnace vertically, and in cvd furnace vertically formed it is thin
The thickness evenness of film is improved.
Present invention also provides a kind of semiconductor devices, including film, and the film is by the above-mentioned deposition process system of the application
Form.Above-mentioned film is formed on the different wafers in cvd furnace vertically, and in cvd furnace vertically not
It is improved with the thickness evenness that film is formed on wafer, so that what is vertically formed in cvd furnace is different
The performance of semiconductor devices is more stablized.
It can be seen from the above that the application the above embodiments realize following technique effect：Have by setting
There are the first pipeline of the second opening outlet at the top from the first opening air inlet of the bottom of settling chamber and from settling chamber, Yi Jicong
The cvd furnace of second pipeline of the second opening air inlet at the top of settling chamber and the first outlet outlet at the top from settling chamber, and
Alternately open the first pipeline and the second pipeline in cvd furnace so that the precursor gas of film is along the bottom of settling chamber to top
The direction of the top-to-bottom of direction and settling chamber is alternately passed into settling chamber, so as to improve in cvd furnace along vertical side
To different wafers on form the thickness evenness of film.
The foregoing is merely the preferred embodiment of the application, the application is not limited to, for the skill of this area
For art personnel, the application can have various modifications and variations.It is all within spirit herein and principle, made any repair
Change, equivalent substitution, improvement etc., should be included within the protection domain of the application.
Claims (10)
1. a kind of deposition process, using cvd furnace on wafer deposition film, it is characterised in that the cvd furnace includes settling chamber
And multiple cassettes in settling chamber are vertically set in turn in, and the bottom of settling chamber is provided with the first opening, deposition
The second opening is provided with the top of room, and cvd furnace further includes the first pipeline and the second pipeline；
First pipeline include with the first air inlet pipeline of first open communication and with second open communication
First outlet pipe；
Second pipeline include with the second air inlet pipeline of second open communication and with first open communication
Second outlet pipe；
Wherein, during first pipeline connection described in the second air inlet pipeline in the second pipeline and the second outlet pipe be turned off,
The first air inlet pipeline and the first outlet pipe in first pipeline described in during second pipeline connection are turned off；
The deposition process includes：
Step S1, multiple wafers are respectively placed in the cassette in the cvd furnace；
Step S2, the second air inlet pipeline and the second outlet pipe in the cvd furnace are closed, opens the in the cvd furnace
One air inlet pipeline and the first outlet pipe, are passed through the precursor gas of the film；
Step S3, first air inlet pipeline and the first outlet pipe are closed, opens second air inlet pipeline and the second outlet
Pipeline, is passed through the precursor gas of the film；
Step S4, the wafer is taken out；The deposition process is atomic layer chemical vapor deposition method, and the material of the film is
Oxide, nitride or carbide.
2. deposition process according to claim 1, it is characterised in that in the deposition process,
The step S2 is first carried out, then performs the step S3；Or
The step S3 is first carried out, then performs the step S2.
3. deposition process according to claim 2, it is characterised in that repeating said steps S2 and step S3 is described to be formed
Film, preferably repeating said steps S2 and step S32~10 time.
4. deposition process according to claim 1, it is characterised in that the cvd furnace further includes air inlet and gas outlet,
First air inlet pipeline is away from one of described first one end, second air inlet pipe being open away from the described second opening
Connection forms threeway between end and the air inlet；
First outlet pipe is away from one of described second one end, second air outlet pipe being open away from the described first opening
Connection forms threeway between end and the gas outlet.
5. deposition process according to claim 1, it is characterised in that
Connection forms threeway between first air inlet pipeline, second outlet pipe and first opening；
Connection forms threeway between first outlet pipe, second air inlet pipeline and second opening.
6. according to the deposition process described in claim 1,4 or 5, it is characterised in that set on first air inlet pipeline
One switch valve, sets second switch valve on first outlet pipe, and the 3rd switch is set on second air inlet pipeline
Valve, goes out to set the 4th switch valve on pipeline described second.
7. deposition process according to claim 6, it is characterised in that
In the one end of first air inlet pipeline away from the described first opening, second air inlet pipe away from the described second opening
First triple valve is set between one end and the air inlet；
First outlet pipe is away from one of described second one end, second air outlet pipe being open away from the described first opening
The second triple valve is set between end and the gas outlet.
8. deposition process according to claim 5, it is characterised in that
The 3rd triple valve is set between first air inlet pipeline, second outlet pipe and first opening；
The 4th triple valve is set between first outlet pipe, second air inlet pipeline and second opening.
A kind of 9. film, it is characterised in that the film made by deposition process described in any item of the claim 1 to 8 and
Into.
10. a kind of semiconductor devices, including film, it is characterised in that the film is as any one of claim 1 to 8
Deposition process be made.
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| CN111020530B (en) * | 2019-12-26 | 2022-08-05 | 湖南德智新材料有限公司 | Chemical vapor deposition furnace with air inlet at two ends |
| CN112921302A (en) * | 2021-01-22 | 2021-06-08 | 无锡松煜科技有限公司 | Bidirectional air intake passivation deposition device for photovoltaic cell |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101956183A (en) * | 2010-10-12 | 2011-01-26 | 上海宏力半导体制造有限公司 | Chemical vapor deposition furnace |
| CN102534558A (en) * | 2011-12-31 | 2012-07-04 | 刘汝强 | Chemical vapor deposition furnace capable of realizing upper and lower air inlet switching and application thereof |
| CN102560425A (en) * | 2012-01-18 | 2012-07-11 | 湖南南方搏云新材料有限责任公司 | Chemical vapor deposition furnace |
| CN102796995A (en) * | 2012-08-27 | 2012-11-28 | 北京博宇半导体工艺器皿技术有限公司 | Vapor deposition furnace and method for preparing pyrolytic boron nitride product |
-
2014
- 2014-05-22 CN CN201410220005.5A patent/CN105088188B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101956183A (en) * | 2010-10-12 | 2011-01-26 | 上海宏力半导体制造有限公司 | Chemical vapor deposition furnace |
| CN102534558A (en) * | 2011-12-31 | 2012-07-04 | 刘汝强 | Chemical vapor deposition furnace capable of realizing upper and lower air inlet switching and application thereof |
| CN102560425A (en) * | 2012-01-18 | 2012-07-11 | 湖南南方搏云新材料有限责任公司 | Chemical vapor deposition furnace |
| CN102796995A (en) * | 2012-08-27 | 2012-11-28 | 北京博宇半导体工艺器皿技术有限公司 | Vapor deposition furnace and method for preparing pyrolytic boron nitride product |
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