CN112921302A - Bidirectional air intake passivation deposition device for photovoltaic cell - Google Patents
Bidirectional air intake passivation deposition device for photovoltaic cell Download PDFInfo
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- CN112921302A CN112921302A CN202110087980.3A CN202110087980A CN112921302A CN 112921302 A CN112921302 A CN 112921302A CN 202110087980 A CN202110087980 A CN 202110087980A CN 112921302 A CN112921302 A CN 112921302A
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- 238000002161 passivation Methods 0.000 title claims abstract description 42
- 230000008021 deposition Effects 0.000 title claims abstract description 19
- 230000002457 bidirectional effect Effects 0.000 title abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 40
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 23
- 230000000694 effects Effects 0.000 abstract description 9
- 238000005215 recombination Methods 0.000 abstract description 8
- 230000006798 recombination Effects 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 50
- 210000004027 cell Anatomy 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 4
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- 238000006388 chemical passivation reaction Methods 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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Abstract
The invention discloses a bidirectional air inlet passivation deposition device for a photovoltaic cell, which is provided with a main machine chamber, wherein the main machine chamber is at least provided with a process chamber, one end of the process chamber is a furnace mouth end, the other end of the process chamber is a closed furnace tail end, a first air inlet is arranged at the position of the process chamber close to the furnace mouth end, a first air outlet is arranged at the position of the process chamber close to the furnace mouth end, a second air inlet is arranged at the position of the process chamber close to the furnace tail end, and a second air outlet is arranged at the position of the process chamber close to the furnace tail end or the furnace tail. According to the invention, the aluminum oxide film is grown in a bidirectional alternating air inlet mode, the uniformity of the aluminum oxide film can be greatly improved, the uniformity of the aluminum oxide film under the pyramid suede structure can be controlled within 3%, a stronger field passivation effect of the aluminum oxide film can be exerted, auger recombination, SRH recombination and surface recombination are reduced, and the passivation effect is greatly improved.
Description
Technical Field
The invention relates to the technical field of photovoltaic solar cells, in particular to a bidirectional air intake passivation deposition device applied to photovoltaic cell surface deposition.
Background
Photovoltaic solar cells are semiconductor materials that convert solar light energy directly into electrical energy. Currently, silicon photovoltaic cells using silicon as a substrate are commonly used, and include single crystal silicon, polycrystalline silicon, amorphous silicon, stacked photovoltaic cells of crystalline silicon and compound, and the like. PERT batteries (Passivated Emitter and reactor Rear-diffused batteries) and PERC batteries (Passivated Emitter and reactor Rear batteries) are novel photovoltaic battery technologies, and the PERT and PERC batteries are the biggest difference from conventional batteries in passivation of dielectric films on the front surface and the back surface, and can effectively reduce the electron recombination speed of the back surface. On the basis of the PERT battery, TOPCon (Tunnel Oxide Passivated Contact) has become a research hotspot as a novel passivation technology, and the technology is to generate an ultrathin tunnelable Oxide layer and a highly doped polysilicon layer on the surface of the battery. In addition, there are heterojunction (e.g., HJT) cell structures.
The current mature passivation methods include: the device comprises a tubular ALD atomic layer deposition passivation device, a flat-plate ALD atomic layer deposition passivation device, a tubular PECVD two-in-one passivation device, a flat-plate PECVD passivation device and the like, wherein the tubular ALD atomic layer deposition passivation device is taken as a leading part, and particularly, the requirements on the uniformity and passivation quality of the surface passivation of a silicon wafer are extremely strict under the promotion of the current photovoltaic cell on the large-size silicon wafer with the sizes of 182&210 and the like and a new technical route. The front side of the conventional PERT battery and the back side of the PERC battery are both provided with pyramid textured structures, and the pyramid textured structures are used for improving the conversion efficiency of the battery. When the ALD atomic layer deposition is carried out on the surface of the battery, the existing gas inlet and outlet mode is generally one-way gas inlet and outlet, the requirement that the uniformity of aluminum oxide is within 5% in a chip can be met, and the unevenness of the pyramid textured structure can reach more than 10% by using a one-way gas inlet and outlet mode (see figures 1 and 2), so that the energy efficiency advantage of the high-efficiency battery efficiency is greatly influenced.
Disclosure of Invention
The applicant provides a bidirectional air inlet passivation deposition device for a photovoltaic cell, aiming at the defects of poor uniformity of an aluminum oxide film on a pyramid suede structure and the like of the existing ALD passivation equipment, and the device improves the uniformity of an aluminum oxide film layer through a bidirectional alternative air inlet mode, solves the problems of air holes, field-free passivation, high energy consumption, EL black spots and the like caused by nonuniform aluminum oxide film, and can be used for double-sided passivation of silicon wafers.
The technical scheme adopted by the invention is as follows:
the utility model provides a two-way passivation deposition apparatus that admits air of photovoltaic cell, has a host computer room, has a technology cavity at least in the host computer room, and the one end of technology cavity is the fire door end, and the other end is confined stove tail end, is equipped with first air inlet on the position that technology cavity is close to the fire door end, is equipped with first gas outlet on the position that technology cavity is close to the fire door end, is equipped with the second air inlet on the position that technology cavity is close to the stove tail end, is equipped with the second gas outlet on the position that technology cavity is close to the stove tail end or the stove tail.
As a further improvement of the above technical solution:
the side wall of the process chamber close to the furnace mouth end is provided with a first air inlet, the bottom of the process chamber close to the furnace mouth end is provided with a first air outlet, and the side wall of the process chamber close to the furnace tail end is provided with a second air inlet.
The first air inlet corresponds to the second air outlet, the first air inlet is communicated with an external first air inlet pipeline, and the second air outlet is communicated with an external second air outlet pipeline.
The second air inlet corresponds to the first air outlet, the second air inlet is communicated with an external second air inlet pipeline, and the first air outlet is communicated with an external first air outlet pipeline.
The second gas outlet pipeline is divided into a first branch and a second branch, and the first gas outlet pipeline, the first branch and the second branch are combined and then communicated with the tail gas treatment device.
The vacuum valve is installed on the first air outlet pipeline, the vacuum gauge is installed on the second air outlet pipeline and then is divided into a first branch and a second branch, the vacuum valve is installed on the first branch, and the vacuum valve is installed on the second branch.
The three-way combination mode adopts two-way combination and then combined with the third way, or three ways are combined simultaneously.
The tail gas treatment device is a tail gas treatment tank.
The tail gas treatment device is communicated with the vacuum pump through a tail gas pipeline, and a vacuum valve is installed before the tail gas pipeline is communicated with the vacuum pump.
The invention has the following beneficial effects:
in order to better solve the existing problems, the invention adopts a bidirectional alternative air inlet mode to grow the aluminum oxide film, can greatly improve the uniformity of the aluminum oxide film, can also control the uniformity of the aluminum oxide film within 3 percent under a pyramid suede structure, can exert stronger field passivation effect of the aluminum oxide film, reduces Auger recombination, SRH recombination (Shockley-Read-Hall), unbalanced carrier recombination) and surface recombination, and greatly improves the passivation effect.
The method adopts a bidirectional alternating gas inlet and outlet mode when depositing the alumina film, improves the uniformity of the alumina film, gives full play to the suspended unsaturated bonds on the surface of the alumina passivated silicon chip, has good field passivation and chemical passivation effects, solves the problems of air holes, field-free passivation, high energy consumption and the like caused by the non-uniform alumina film, is superior to the passivation effect of the alumina film in a unidirectional gas inlet and outlet mode, and solves the defect of non-uniform passivation. The high-uniformity aluminum oxide film can further enhance the effects of chemical passivation and field passivation, has the advantages of good economy, good environmental protection, high feasibility of large-scale batch production and the like, and can be widely applied to battery structures such as PERT, PERC, TOPCon, heterojunction and the like.
Drawings
Fig. 1 is a schematic view of a conventional gas inlet and outlet method.
Fig. 2 is a microscopic view of the prior art.
Fig. 3 is a simplified block diagram of the present invention.
Fig. 4 is a block diagram of the apparatus of the present invention.
Fig. 5 is a schematic view of the air inlet and outlet method of the present invention.
FIG. 6 is a schematic view of a microscopic view of the process of the present invention.
Wherein, 1, a process chamber; 2. a furnace mouth end; 3. the furnace tail end; 4. a first air inlet; 5. a first air outlet; 6. a second air inlet; 7. a second air outlet; firstly, the direction is one; ② the second direction.
Detailed Description
Referring to fig. 3 and 4, the bidirectional gas-feeding passivation deposition device for photovoltaic cells of the present invention has a main chamber, and the main chamber has at least one process chamber 1, and the process chamber 1 is preferably a box. One end of the process chamber 1 is a furnace mouth end 2 for installing a furnace cover structure, and the other end is a closed furnace tail end 3. The side wall of the process chamber 1 close to the furnace mouth end 2 is provided with a first air inlet 4, the first air inlet 4 is communicated with an external first air inlet pipeline, the bottom of the process chamber 1 close to the furnace mouth end 2 is provided with a first air outlet 5, and the first air outlet 5 is communicated with an external first air outlet pipeline. And a second air inlet 6 is arranged on the side wall of the process chamber 1 close to the furnace tail end 3, the second air inlet 6 is communicated with an external second air inlet pipeline, a second air outlet 7 is arranged on the furnace tail of the process chamber 1, and the second air outlet 7 is communicated with an external second air outlet pipeline.
The first air outlet pipeline is provided with a vacuum valve, the second air outlet pipeline is provided with a vacuum gauge and then is divided into a first branch and a second branch, the first branch is provided with the vacuum valve, the second branch is provided with the vacuum valve, the first air outlet pipeline, the first branch and the second branch are combined and then communicated with the tail gas treatment device, the three-way combination mode can be that two ways are combined firstly and then combined with the third way, or three ways are combined simultaneously, and the tail gas treatment device is preferably a tail gas treatment tank. The tail gas treatment device is communicated with the vacuum pump through a tail gas pipeline, and a vacuum valve is installed before the tail gas pipeline is communicated with the vacuum pump.
When the method is implemented, an alumina film is deposited on the surface of a silicon wafer in a bidirectional alternating airflow mode, the first air inlet 4 and the second air outlet 7 form airflow correspondingly, and the second air inlet 6 and the first air outlet 5 form airflow correspondingly. Firstly, process gas enters a process chamber 1 through a first gas inlet pipeline and a first gas inlet 4, is discharged through an external second gas outlet pipeline through a second gas outlet 7 after a deposition reaction occurs, and is transmitted in a tail gas treatment device through a pipeline to treat tail gas, and at the moment, the gas is discharged from the process chamber 1, so that furnace mouth gas inlet and furnace tail gas outlet are realized. Then, the process gas enters the process chamber 1 through the second gas inlet 6 from the second gas inlet pipeline, is discharged through the external first gas outlet pipeline from the first gas outlet 5 after a deposition reaction occurs, and is transmitted in the tail gas treatment device through the pipeline to treat the tail gas, and at the moment, the gas is discharged from the process chamber 1, so that the gas inlet at the furnace tail and the gas outlet at the furnace mouth are realized.
Specifically, depositing an alumina film in a furnace chamber by using a bidirectional alternating gas inlet and outlet mode, firstly introducing TMA gas for 2-10 seconds, purging with nitrogen for 5-20 seconds, introducing ozone or gaseous water for 2-10 seconds, and purging with nitrogen for 2-10 seconds, wherein the cycle is one cycle; and changing the mode of furnace tail gas inlet and furnace mouth gas outlet, introducing TMA gas for 2-10 seconds, purging with nitrogen for 5-20 seconds, introducing ozone or gaseous water for 2-10 seconds, and purging with nitrogen for 2-10 seconds, wherein the second period is the period. The two air inlet and outlet modes are alternately carried out at equal intervals. The thickness of the aluminum oxide is controlled within the range of 5 +/-3 nm, and the refractive index is controlled within the range of 1.5-1.7; under various surface microstructures, the uniformity of the aluminum oxide can be controlled within 3 percent. Participating in TMA (Al (CH)3)3) Preparation of alumina to Al together2O3The reactant of the membrane can optionally comprise water and O2、O3Any one or more thereof.
By way of example, in this embodiment, the backside of the silicon wafer is plated with an aluminum oxide film by ALD or PEALD, and the reaction gas participating in the plating of the aluminum oxide film includes TMA and ozone (O)3) And an assist gas. By adjusting TMA and ozone (O)3) Proportional reaction for preparing Al2O3The plating rate is controlled to be 1.7A/cycle, and the chemical reaction formula is [ Al (CH)3)3+O3→Al2O3+CO2↑+H2O↑]. The film thickness is controlled within 5 +/-2 nm, and the refractive index is 1.5-1.7. The ratio of argon to TMA in the auxiliary gas is 2: 1-10: 1. The assist gas may also be nitrogen.
Referring to fig. 5 and 6, the aluminum oxide film is grown by adopting a bidirectional alternating air inlet mode, the alternating period is set to be one time, two times or multiple times according to different processes, the uniformity of the aluminum oxide film can be greatly improved, the uniformity of the aluminum oxide film under the pyramid textured structure can be controlled within 3 percent, a stronger field passivation effect of the aluminum oxide film can be exerted, suspended unsaturated bonds on the surface of the aluminum oxide passivation silicon wafer can be exerted to the maximum extent, good field passivation and chemical passivation effects are achieved, and the problems of air holes, field-free passivation, high energy consumption and the like caused by the uneven aluminum oxide film are solved.
The foregoing description is illustrative of the present invention and is not to be construed as limiting thereof, as the invention may be modified in any manner without departing from the spirit thereof.
Claims (9)
1. The utility model provides a two-way passivation deposition apparatus that admits air of photovoltaic cell which characterized in that: have a host computer room, the indoor one process chamber (1) that has at least of host computer, the one end of process chamber (1) is furnace mouth end (2), the other end is confined furnace tail end (3), be equipped with first air inlet (4) on the position that process chamber (1) is close to furnace mouth end (2), be equipped with first gas outlet (5) on the position that process chamber (1) is close to furnace mouth end (2), be equipped with second air inlet (6) on the position that process chamber (1) is close to furnace tail end (3), be equipped with second gas outlet (7) on the position that process chamber (1) is close to furnace tail end (3) or the furnace tail.
2. The device for bi-directional air intake passivation and deposition of photovoltaic cells according to claim 1, characterized in that: the side wall of the process chamber (1) close to the furnace mouth end (2) is provided with a first air inlet (4), the bottom of the process chamber (1) close to the furnace mouth end (2) is provided with a first air outlet (5), and the side wall of the process chamber (1) close to the furnace tail end (3) is provided with a second air inlet (6).
3. The device for bi-directional air intake passivation and deposition of photovoltaic cells according to claim 1, characterized in that: the first air inlet (4) corresponds to the second air outlet (7), the first air inlet (4) is communicated with an external first air inlet pipeline, and the second air outlet (7) is communicated with an external second air outlet pipeline.
4. The device for bi-directional air intake passivation and deposition of photovoltaic cells according to claim 3, characterized in that: the second air inlet (6) corresponds to the first air outlet (5), the second air inlet (6) is communicated with an external second air inlet pipeline, and the first air outlet (5) is communicated with an external first air outlet pipeline.
5. The device for bi-directional air intake passivation and deposition of photovoltaic cells according to claim 4, characterized in that: the second gas outlet pipeline is divided into a first branch and a second branch, and the first gas outlet pipeline, the first branch and the second branch are combined and then communicated with the tail gas treatment device.
6. The device for bi-directional air intake passivation and deposition of photovoltaic cells according to claim 5, characterized in that: the vacuum valve is installed on the first air outlet pipeline, the vacuum gauge is installed on the second air outlet pipeline and then is divided into a first branch and a second branch, the vacuum valve is installed on the first branch, and the vacuum valve is installed on the second branch.
7. The device for bi-directional air intake passivation and deposition of photovoltaic cells according to claim 5, characterized in that: the three-way combination mode adopts two-way combination and then combined with the third way, or three ways are combined simultaneously.
8. The device for bi-directional air intake passivation and deposition of photovoltaic cells according to claim 5, characterized in that: the tail gas treatment device is a tail gas treatment tank.
9. The device for bi-directional air intake passivation and deposition of photovoltaic cells according to claim 5, characterized in that: the tail gas treatment device is communicated with the vacuum pump through a tail gas pipeline, and a vacuum valve is installed before the tail gas pipeline is communicated with the vacuum pump.
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