CN105074894A - 密封片材、半导体装置的制造方法及带有密封片材的基板 - Google Patents

密封片材、半导体装置的制造方法及带有密封片材的基板 Download PDF

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Publication number
CN105074894A
CN105074894A CN201480018205.0A CN201480018205A CN105074894A CN 105074894 A CN105074894 A CN 105074894A CN 201480018205 A CN201480018205 A CN 201480018205A CN 105074894 A CN105074894 A CN 105074894A
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Prior art keywords
underfill
adherend
mentioned
resin
semiconductor element
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CN201480018205.0A
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盛田浩介
高本尚英
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Nitto Denko Corp
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Nitto Denko Corp
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Abstract

本发明提供可通过对半导体元件或被粘物的凹凸的良好的埋入性而抑制空隙的产生并且在粘贴于被粘物的前后作业性良好的密封片材及使用其的半导体装置的制造方法、以及贴合有该密封片材的基板。本发明的密封片材具备基材、及设置于该基材上的具有以下特性的底部填充材料。自上述基材的90°剥离力：1mN/20mm以上且50mN/20mm以下25℃下的断裂延伸率：10％以上40℃以上且低于100℃的最低粘度：20000Pa·s以下100℃以上且200℃以下的最低粘度：100Pa·s以上。

Description

密封片材、半导体装置的制造方法及带有密封片材的基板
技术领域
本发明设计密封片材、半导体装置的制造方法及带有密封片材的基板。
背景技术
近年来，随着电子设备的小型、薄型化所致的高密度安装的要求急剧增加。为了应对该要求，半导体封装中，适于高密度安装的表面安装型已代替以往的插件型成为主流。其中，借助形成在半导体芯片的表面的突起状的电极(端子)将半导体芯片与基板电连接的倒装芯片安装技术正逐步发展。
在表面安装时，为了保护半导体元件表面、确保半导体元件与基板之间的连接可靠性，对半导体元件与基板之间的空间进行密封树脂的填充。作为这样的密封树脂，广泛使用液状的密封树脂，但是液状的密封树脂难以调节注入位置和注入量、或者无法充分填充经窄间距化的凸块周边而产生空隙。因此，还提出了使用片状的密封树脂(底部填充片材)填充半导体元件与基板之间的空间的技术(专利文献1)。
上述技术中，采用了如下步骤：预先在基板上配置粘接层(底部填充片材)，在将半导体元件与基板连接时，通过预先配置于该基板的粘接层填充两者间的空间。在该填充工艺中，被粘物与半导体元件之间的空间的填充变得容易。
现有技术文献
专利文献
专利文献1：日本特开2010-45104号公报
发明内容
然而，在上述专利文献1所记载的技术中，以单层方式利用作为底部填充片材的粘接层，并将单层的粘接层直接配置于胶带基板，因此存在如下情况：配置前的粘接层的操作较为困难，产生对非目标部位的附着或粘接层的断裂。对此，也可以贴合用于加强底部填充片材的加强材料作为密封用片材来加以对应。在这种情况下，虽然因加强材料的存在而使配置于基板前的底部填充片材的作业性良好，但由于除底部填充片材以外还组合加强材料来使用，因此在配置时对密封用片材要求基于该组合的新的特性。
本发明的目的在于，提供一种可通过对半导体元件或被粘物的凹凸的良好的埋入性而抑制空隙的产生并且在粘贴于被粘物的前后作业性良好的密封片材、及使用其的半导体装置的制造方法、以及贴合有该密封片材的基板。
本申请发明人进行了深入研究，结果发现通过采用下述构成可实现上述目的，从而完成本发明。
本发明的密封片材具备基材、及设置于该基材上的具有以下特性的底部填充材料。
自上述基材的90°剥离力：1mN/20mm以上且50mN/20mm以下
25℃下的断裂延伸率：10％以上
40℃以上且低于100℃的最低粘度：20000Pa·s以下
100℃以上且200℃以下的最低粘度：100Pa·s以上。
在将底部填充材料贴合于基板等被粘物后，需要将基材自底部填充材料剥离。关于该密封片材，将底部填充材料的自基材的90°剥离力设为1mN/20mm以上且50mN/20mm以下，因此可不施加过剩的负荷而顺利地剥离。另外，将底部填充材料在25℃下的断裂延伸率设为10％以上，因此即便在粘贴于被粘物前产生伸缩作用也不会断裂，此外，即便在剥离时负荷上述剥离力，也可防止底部填充材料本身的断裂。此外，将底部填充材料在40℃以上且低于100℃的最低粘度设为20000Pa·s以下，因此底部填充材料对被粘物的凹凸的埋入性良好，可防止底部填充材料与被粘物之间产生空隙。另外，将底部填充材料的100℃以上且200℃以下的最低粘度设为100Pa·s以上，因此可抑制来自底部填充材料的逸气成分(水分或有机溶剂等)所引起的空隙的产生。这样，对于该密封片材而言，以与基材和底部填充材料的组合相对应的方式控制其特性，因此可制成抑制空隙的产生且在贴合于被粘物的前后作业性良好的片材。需要说明的是，在本说明书中，90°剥离力、断裂延伸率、最低熔融粘度及对基材的剥离力的各测定方法记载于实施例中。
对于该密封片材而言，优选为上述底部填充材料包含热塑性树脂及热固化性树脂。其中，优选为上述热塑性树脂包含丙烯酸系树脂，上述热固化性树脂包含环氧树脂及酚醛树脂。通过使底部填充材料包含这些成分，可适宜地发挥密封片材所要求的上述特性。
上述热固化性树脂优选为包含25℃下为液状的热固化性树脂(以下也称为“液状热固化性树脂”)，且上述液状热固化性树脂的重量相对于上述热固化性树脂的总重量的比例为5重量％以上且40重量％以下。由此，可平衡性良好地发挥上述特性，尤其是粘度调整变得容易，可使底部填充材料对被粘物的凹凸的埋入性良好。
上述底部填充材料优选包含助焊剂。由此，可实现焊料凸块等电极表面的氧化膜的去除或焊料的润湿性的提高等，可使设置于半导体元件上的焊料凸块等突起电极高效地熔融，而更可靠地将半导体元件与被粘物电连接。
对于该密封片材而言，优选为上述基材包含热塑性树脂。其中，从对该密封片材赋予适度的拉伸强度、伸长率等机械特性的观点出发，上述热塑性树脂优选为聚对苯二甲酸乙二醇酯。
本发明还包括一种半导体装置的制造方法，其为制造具备被粘物、与该被粘物电连接的半导体元件、及填充于该被粘物与该半导体元件之间的空间的底部填充材料的半导体装置的制造方法，
所述半导体装置的制造方法包括：
准备工序，准备密封片材；
贴合工序，以覆盖上述被粘物上的与上述半导体元件的连接位置的方式将上述密封片材的底部填充材料贴合于上述被粘物；
剥离工序，自贴合于上述被粘物的底部填充材料将上述基材剥离；及
连接工序，用上述底部填充材料填充上述被粘物与上述半导体元件之间的空间，并且借助形成于上述半导体元件上的突起电极将上述半导体元件与上述被粘物电连接。
在该制造方法中，预先将上述密封片材的底部填充材料贴合于被粘物，之后实现半导体元件的电连接。由此，可在自底部填充材料剥离基材时不产生底部填充材料的破坏等，提高与半导体元件的密接性。此外，由于在贴合时底部填充材料具有规定的粘度，因此还可以提高对被粘物或半导体元件的凹凸的追随性。通过这些作用，可制造空隙的产生得到抑制的高可靠性的半导体装置。
本发明还包括一种带有密封片材的基板，其具备包含基板、及粘贴于该基板的该密封片材。
附图说明
图1是表示本发明的一实施方式的密封片材的剖面示意图。
图2A是表示本发明的一实施方式的半导体装置的制造工序的剖面示意图。
图2B是表示本发明的一实施方式的半导体装置的制造工序的剖面示意图。
图2C是表示本发明的一实施方式的半导体装置的制造工序的剖面示意图。
具体实施方式
本发明的密封片材具备基材、及设置于该基材上的具有以下特性的底部填充材料。
自上述基材的90°剥离力：1mN/20mm以上且50mN/20mm以下
25℃下的断裂延伸率：10％以上
40℃以上且低于100℃的最低粘度：20000Pa·s以下
100℃以上且200℃以下的最低粘度：100Pa·s以上
另外，本发明还包括一种半导体装置的制造方法，其为制造具备被粘物、与该被粘物电连接的半导体元件、及填充于该被粘物与该半导体元件之间的空间的底部填充材料的半导体装置的制造方法，所述半导体装置的制造方法包括：准备工序，准备密封片材；贴合工序，以覆盖上述被粘物上的与上述半导体元件的连接位置的方式将上述密封片材的底部填充材料贴合于上述被粘物；剥离工序，自贴合于上述被粘物的底部填充材料将上述基材剥离；及连接工序，用上述底部填充材料填充上述被粘物与上述半导体元件之间的空间，并且借助形成于上述半导体元件上的突起电极将上述半导体元件与上述被粘物电连接。
以下，作为本发明的一实施方式，对上述半导体装置的制造方法中使用上述密封片材的情形进行说明。
[准备工序]
准备工序中，准备密封片材10(参照图1)。该密封片材10具备基材1、及设置于该基材1上的具有以下特性的底部填充材料2。
自上述基材的90°剥离力：1mN/20mm以上且50mN/20mm以下
25℃下的断裂延伸率：10％以上
40℃以上且低于100℃的最低粘度：20000Pa·s以下
100℃以上且200℃以下的最低粘度：100Pa·s以上
(基材)
上述基材1是成为密封片材10的强度基础的物质。可列举例如：低密度聚乙烯、直链状聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、无规共聚聚丙烯、嵌段共聚聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等聚烯烃；乙烯-乙酸乙烯酯共聚物、离聚物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等聚酯；聚碳酸酯、聚酰亚胺、聚醚醚酮、聚酰亚胺、聚醚酰亚胺、聚酰胺、全芳香族聚酰胺、聚苯硫醚、芳族聚酰胺(纸)、玻璃、玻璃布、氟树脂、聚氯乙烯、聚偏二氯乙烯、纤维素系树脂、硅酮树脂、金属(箔)、纸等。
另外，作为基材1的材料，可列举上述树脂的交联体等聚合物。上述塑料膜可以在无拉伸的状态下使用，也可以根据需要使用实施了单轴或双轴的拉伸处理而得的塑料膜。
为了提高基材1的表面与邻接的层的密合性、保持性等，可实施惯用的表面处理例如铬酸处理、臭氧暴露、火焰暴露、高压电击暴露、离子化放射线处理等化学性或物理性的处理，基于底涂剂(例如后述的粘合物质)的涂布处理。
上述基材1可适当选择同种或不同种类的基材，可以根据需要使用将多种基材混合而成的混合物。另外，为了对基材1赋予抗静电能力，可以在上述的基材1上设置由金属、合金、它们的氧化物等形成的厚度30～左右的导电性物质的蒸镀层。基材1可为单层或2种以上的多层。
基材1的厚度可考虑密封片材10的作业性等而适当决定，通常为5μm以上且200μm以下左右，优选为35μm以上且120μm以下。
需要说明的是，在无损本发明的效果等的范围内，基材1还可含有各种添加剂(例如着色剂、填充剂、增塑剂、防老化剂、抗氧化剂、表面活性剂、阻燃剂等)。
(底部填充材料)
本实施方式中的底部填充材料2可用作填充经表面安装后的半导体元件5与被粘物6之间的空间的密封用膜(参照图2C)。
底部填充材料2自基材1的90°剥离力为1mN/20mm以上且50mN/20mm以下。90°剥离力的下限只要为1mN/20mm以上，则并无特别限定，优选为5mN/20mm以上，更优选为10mN/20mm以上。另一方面，90°剥离力的上限只要为50mN/20mm以下，则并无特别限定，但优选为40mN/20mm以下，更优选为30mN/20mm以下。通过采用这种90°剥离力，在将底部填充材料2贴合于基板等被粘物6后将基材1自底部填充材料2剥离时，可不对密封片材10施加过剩负荷而顺利地剥离(参照图2B)，并且还可以防止在密封片材的操作时底部填充材料与基材之间产生意外的剥离。
底部填充材料2的25℃下的断裂延伸率为10％以上，优选为50％以上，更优选为100％以上。即便在操作密封片材10并且粘贴于被粘物前产生伸缩作用，底部填充材料2也不会断裂，此外，即便在剥离时负荷上述剥离力，也可以防止底部填充材料2本身的断裂。需要说明的是，上述断裂延伸率的上限越高越好，在物理上极限为1000％左右。
底部填充材料2的40℃以上且低于100℃的粘度为20000Pa·s以下，优选为15000Pa·s以下，更优选为10000Pa·s以下。通过这种粘度，底部填充材料2对被粘物6的凹凸的埋入性较为良好，可防止在底部填充材料2与被粘物6之间产生空隙。需要说明的是，虽然上述粘度的下限并无特别限定，但从贴合于基板等被粘物时的形状维持性的观点出发，只要为1000Pa·s以上即可。
底部填充材料2的100℃以上且200℃以下的最低粘度为100Pa·s以上，优选为500Pa·s以上，更优选为1000Pa·s以上。通过采用上述最低粘度，可抑制自底部填充材料的逸气(水分或有机溶剂等)所引起的空隙的产生。需要说明的是，虽然上述最低粘度的上限并无特别限定，但从对半导体元件所具有的凹凸的埋入性的观点出发，优选为10000Pa·s以下，更优选为5000Pa·s以下。
作为底部填充材料的构成材料，可列举并用热塑性树脂与热固化性树脂的材料。另外，热塑性树脂或热固化性树脂也可以单独使用。
作为上述热塑性树脂，可以列举：天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁橡胶、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、6-尼龙、6,6-尼龙等聚酰胺树脂、苯氧基树脂、丙烯酸系树脂、PET或PBT等饱和聚酯树脂、聚酰胺酰亚胺树脂、或氟树脂等。这些热塑性树脂可以单独使用或者并用两种以上。这些热塑性树脂中，特别优选离子性杂质少、耐热性高、且能够确保半导体元件的可靠性的丙烯酸系树脂。
作为上述丙烯酸系树脂，没有特别限定，可以列举以具有碳原子数30以下、特别是碳原子数4～18的直链或支链的烷基的丙烯酸或甲基丙烯酸的酯中的一种或两种以上为成分的聚合物等。作为上述烷基，可以列举例如：甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、环己基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基、或十二烷基等。
另外，作为形成上述聚合物的其他单体，没有特别限定，可以列举例如：丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、马来酸、富马酸或巴豆酸等各种含羧基单体；马来酸酐或衣康酸酐等各种酸酐单体；(甲基)丙烯酸2-羟基乙酯、(甲基)丙烯酸2-羟基丙酯、(甲基)丙烯酸4-羟基丁酯、(甲基)丙烯酸6-羟基己酯、(甲基)丙烯酸8-羟基辛酯、(甲基)丙烯酸10-羟基癸酯、(甲基)丙烯酸12-羟基月桂酯或丙烯酸(4-羟基甲基环己基)甲酯等各种含羟基单体；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯酰氧基萘磺酸等各种含磺酸基单体；或者2-羟基乙基丙烯酰基磷酸酯等各种含磷酸基单体；丙烯腈等含氰基单体等。
作为上述热固化性树脂，可以列举酚醛树脂、氨基树脂、不饱和聚酯树脂、环氧树脂、聚氨酯树脂、有机硅树脂、或热固化性聚酰亚胺树脂等。这些树脂可以单独使用或并用两种以上。特别优选使半导体元件腐蚀的离子性杂质等的含量少的环氧树脂。另外，作为环氧树脂的固化剂，优选酚醛树脂。
上述环氧树脂只要为通常用作胶粘剂组合物的环氧树脂，则没有特别限定，可以使用例如双酚A型、双酚F型、双酚S型、溴化双酚A型、氢化双酚A型、双酚AF型、联苯型、萘型、芴型、苯酚线型酚醛型、邻甲酚线型酚醛型、三羟基苯基甲烷型、四羟苯基乙烷型等二官能环氧树脂或多官能环氧树脂、或者乙内酰脲型、三缩水甘油基异氰脲酸酯型或者缩水甘油基胺型等环氧树脂。这些环氧树脂可以单独使用或者并用两种以上。在这些环氧树脂中，特别优选线型酚醛型环氧树脂、联苯型环氧树脂、三羟基苯基甲烷型树脂或四苯基乙烷型环氧树脂。这是由于这些环氧树脂富有与作为固化剂的酚醛树脂的反应性且耐热性等优异。
此外，上述酚醛树脂作为上述环氧树脂的固化剂发挥作用，可以列举例如：苯酚线型酚醛树脂、苯酚芳烷基树脂、甲酚线型酚醛树脂、叔丁基苯酚线型酚醛树脂、壬基苯酚线型酚醛树脂等线型酚醛型酚醛树脂、甲阶酚醛型酚醛树脂、聚对氧基苯乙烯等聚氧基苯乙烯等。它们可以单独使用或并用两种以上。在这些酚醛树脂中，特别优选苯酚线型酚醛树脂、苯酚芳烷基树脂。其原因在于，能够提高半导体装置的连接可靠性。
关于上述环氧树脂与酚醛树脂的配合比例，例如优选以酚醛树脂中的羟基相对于上述环氧树脂成分中的每1当量环氧基为0.5～2.0当量的方式配合。更优选为0.8～1.2当量。即，这是由于若两者的配合比例在上述范围之外，则无法进行充分的固化反应，环氧树脂固化物的特性容易劣化。
需要说明的是，在本实施方式中，特别优选使用了环氧树脂、酚醛树脂及丙烯酸系树脂的底部填充材料。这些树脂的离子性杂质少且耐热性高，因此可确保半导体元件的可靠性。这种情况下的配合比相对于丙烯酸系树脂成分100重量份，环氧树脂与酚醛树脂的混合量为10～200重量份。
上述热固化性树脂优选包含液状热固化性树脂。这种情况下，上述液状热固化性树脂的重量相对于上述热固化性树脂的总重量的比例优选为5重量％以上且40重量％以下，更优选为10重量％以上且35重量％以下。由此，可平衡性良好地发挥上述底部填充材料2的所需特性，尤其是可使底部填充材料2对被粘物6的凹凸的埋入性良好。作为液状热固化性树脂，在上述热固化性树脂中，可优选使用重均分子量为1000以下的树脂。需要说明的是，重均分子量的测定方法可利用以下方法进行测定。使试样以0.1wt％溶解于THF中，使用GPC(凝胶渗透色谱)通过聚苯乙烯换算测定重均分子量。详细的测定条件如下所述。
＜重均分子量的测定条件＞
GPC装置：Tosoh制造，HLC-8120GPC
柱：Tosoh制造，(GMHHR-H)+(GMHHR-H)+(G2000HHR)
流量：0.8mL/min
浓度：0.1wt％
注入量：100μL
柱温度：40℃
洗脱液：THF
作为环氧树脂和酚醛树脂的热固化促进催化剂，没有特别限定，可以从公知的热固化促进催化剂中适当选择使用。热固化促进催化剂可以单独使用或并用两种以上。作为热固化促进催化剂，可以使用例如胺系固化促进剂、磷系固化促进剂、咪唑系固化促进剂、硼系固化促进剂、磷-硼系固化促进剂等。
为了去除焊料凸块的表面的氧化膜以容易地安装半导体元件，还可以在底部填充材料2中添加助焊剂。作为助焊剂，并无特别限定，可使用现有公知的具有助焊剂作用的化合物，但优选为pKa为3.5以上的含羧基的化合物(以下也称为“含羧基的化合物”)。由此，可抑制产生羧酸根离子，可抑制与具有环氧基等反应性官能团的热固化性树脂等的反应性。其结果是，该含羧基的化合物即便因安装半导体时的热也不会直接与热固化性树脂反应，而可通过之后经时赋予的热而充分地发挥助焊剂功能。
(pKa为3.5以上的含羧基的化合物)
作为本实施方式的含羧基的化合物，只要是分子内具有至少1个羧基、酸解离常数pKa为3.5以上且具有助焊剂功能的化合物，则并无特别限定。含羧基的化合物的pKa只要为3.5以上即可，但从抑制与环氧树脂的反应、并且表现挠性的经时稳定性及助焊剂功能的观点出发，优选为3.5以上且7.0以下，更优选为4.0以上且6.0以下。需要说明的是，羧基为2个以上的情况下，优选为将第一解离常数pKa1设为酸解离常数、且该第一解离常数pKa1处于上述范围的化合物。另外，pKa是在含羧基的化合物的稀水溶液条件下，对酸解离常数Ka＝[H3O+][B-]/[BH]进行测定，通过pKa＝-logKa而求出的。此处，BH表示含羧基的化合物，B-表示含羧基的化合物的共轭碱。pKa的测定方法可使用pH计测定氢离子浓度，进而根据该物质的浓度与氢离子浓度而算出。
作为上述含羧基的化合物，优选为选自芳香族羧酸(以下有时仅称为“芳香族羧酸”)、以及分子内具有1个以上羧基的碳数为8以上的脂肪族羧酸(以下有时仅称为“脂肪族羧酸”)中的至少1种，其中，上述芳香族羧酸在分子内具有选自烷基、烷氧基、芳氧基、芳基及烷基胺基中的至少1种取代基。
(芳香族羧酸)
上述芳香族羧酸只要是分子内具有选自烷基、烷氧基、芳氧基、芳基及烷基氨基中的至少1种取代基，则没有特别的限定。作为芳香族羧酸的除去上述取代基的母体骨架，没有特别的限定，可列举苯甲酸、萘甲酸等。芳香族羧酸在这些母体骨架的芳香环上具有上述取代基。其中，从在片状密封组合物中的稳定性、与环氧树脂的低反应性的观点出发，优选苯甲酸作为芳香族羧酸的母体骨架。
具体而言，上述芳香族羧酸优选为2位、4位及6位中的至少1个氢原子独立地被烷基、烷氧基、芳氧基、芳基或烷基氨基取代的苯甲酸衍生物(以下，有时简称为“苯甲酸衍生物”。)。这样的上述苯甲酸衍生物中，规定的取代基单独或组合地存在于苯甲酸的2位、4位及6位中的至少1个位置上。作为上述苯甲酸衍生物的取代基的具体的取代位置，可列举2位、4位、2位和4位、2位和6位、2位和4位和6位。其中，为了抑制与环氧树脂的反应、维持挠性的经时稳定性、并且特别有效地体现助焊剂功能，优选在2位或4位具有取代基。
作为上述芳香族羧酸中的上述烷基，可列举例如：甲基、乙基、正丙基、异丙基、正丁基、异丁基、仲丁基、叔丁基、正戊基、正己基、正庚基、正辛基等碳数1～10的烷基。其中，从pKa的调整、助焊剂功能的表现性的方面出发，优选甲基或乙基。
作为上述烷氧基，可列举例如：甲氧基、乙氧基、正丙氧基、正丁氧基、正己氧基、异丙氧基、正丁氧基、2-甲基丙氧基、叔丁氧基等碳数1～10的烷氧基，其中，从与上述相同的方面出发，优选碳数1～4的烷氧基，进一步优选甲氧基及乙氧基，特别优选甲氧基。
作为上述芳氧基，可列举例如苯氧基、对甲苯氧基等，从与上述相同的观点出发，优选苯氧基。
作为上述芳基，可列举例如苯基、甲苯酰基、苄基、甲基苄基、二甲苯基、均三甲苯基、萘基、蒽基等碳数6～20的芳基，从与上述相同的观点出发，优选苯基。
作为上述烷基氨基，可以适合使用具有碳数1～10的烷基作为取代基的氨基。作为烷基氨基的具体例，可列举例如甲基氨基、乙基氨基、丙基氨基、二甲氨基、二乙基氨基、二丙基氨基等，从与上述相同的观点出发，优选二甲氨基。
上述烷基、烷氧基、芳氧基、芳基或烷氨基中的1个以上的氢原子可以分别独立地被取代。作为这样的附加的取代基，可列举例如：甲氧基、乙氧基、正丙氧基、异丙氧基、正丁氧基、2-甲基丙氧基、1-甲基丙氧基、叔丁氧基等碳数1～4的烷氧基；氰基、氰基甲基、2-氰基乙基、3-氰基丙基、4-氰基丁基等碳数2～5的氰基烷基；甲氧基羰基、乙氧基羰基、叔丁氧基羰基等碳数2～5的烷氧基羰基；甲氧基羰基甲氧基、乙氧基羰基甲氧基、叔丁氧基羰基甲氧基等碳数3～6的烷氧基羰基烷氧基；氟、氯等卤素原子；氟甲基、三氟甲基、五氟乙基等氟烷基等。
作为具有具体的取代位置和取代基的组合的苯甲酸衍生物，优选2-芳氧基苯甲酸、2-芳基苯甲酸、4-烷氧基苯甲酸、4-烷基氨基苯甲酸。
上述苯甲酸衍生物优选不包含羟基。通过排除可能成为与作为代表性的热固化性树脂的环氧树脂的反应点的羟基，从而底部填充材料2可经时地维持挠性，适宜地发挥助焊剂功能。
(脂肪族羧酸)
作为上述脂肪族羧酸，没有特别的限定，链状脂肪族(单)羧酸、脂环式(单)羧酸、链状脂肪族多元羧酸或脂环式多元羧酸均可。此外，也可以组合使用各个形态。
作为链状脂肪族(单)羧酸，可列举例如：辛酸、壬酸、癸酸、十二烷酸、十四烷酸、十六烷酸、十七烷酸、十八烷酸等饱和脂肪酸；油酸、反油酸、芥酸、神经酸、亚麻酸、十八碳四烯酸、二十碳五烯酸、亚油酸、亚麻酸等不饱和脂肪酸等等。
作为脂环式(单)羧酸，可列举：环庚烷羧酸、环辛烷羧酸等单环式羧酸；降冰片烷羧酸、三环癸烷羧酸、四环十二烷羧酸、金刚烷羧酸、甲基金刚烷羧酸、乙基金刚烷羧酸、丁基金刚烷羧酸等碳数8～20的多环式或桥接脂环式羧酸等。
作为上述链状脂肪族多元羧酸，可列举在上述链状脂肪族(单)羧酸上进一步加成1个以上羧基后的羧酸，其中，在与环氧树脂的反应性低、适合发挥助焊剂功能的方面考虑，优选链状脂肪族二羧酸。作为链状脂肪族二羧酸，可列举例如辛二酸、壬二酸、癸二酸、十二烷二酸、十四烷二酸、十六烷二酸、十七烷二酸、十八烷二酸等，其中，优选碳原子数为8～12的链状脂肪族二羧酸。
作为上述脂环式多元羧酸，可列举在上述脂环式(单)羧酸上进一步加成1个以上羧基后的羧酸，其中，在对环氧树脂的低反应性及助焊剂功能的表现性方面，优选脂环式二羧酸。作为脂环式二羧酸，可列举例如：环己烷二羧酸、环庚烷二羧酸、环辛烷二羧酸等单环式二羧酸、降冰片烷二羧酸、金刚烷二羧酸等多环式或桥接脂环式二羧酸等。
在以上的碳数为8以上的脂肪族羧酸中，1个以上的氢原子可以被上述附加的取代基取代。
作为助焊剂的含羧基化合物的添加量只要是发挥上述助焊剂功能的程度即可，优选相对于底部填充材料2中的有机树脂成分的合计重量为0.1～20重量％，更优选为0.5～10重量％。
在本实施方式中，底部填充材料2还可以根据需要进行着色。底部填充材料2中，作为通过着色而呈现出的颜色，没有特别的限制，优选例如黑色、蓝色、红色、绿色等。在着色时，可以从颜料、染料等公知的着色剂中适当地选择使用。
另外，在底部填充材料2中可以适当配合无机填充剂。无机填充剂的配合能够赋予导电性、提高导热性、调节储能弹性模量等。
作为上述无机填充剂，可以列举例如：二氧化硅、粘土、石膏、碳酸钙、硫酸钡、氧化铝、氧化铍、碳化硅、氮化硅等陶瓷类，铝、铜、银、金、镍、铬、铅、锡、锌、钯、焊料等金属、或者合金类，以及包含碳等的各种无机粉末等。这些无机填充剂可以单独使用或并用两种以上。其中，可以优选使用二氧化硅，特别优选使用熔融二氧化硅。
无机填充剂的平均粒径虽无特别限定，但优选为0.005～10μm的范围内，更优选为0.01～5μm的范围内，进一步优选为0.05～2.0μm。若无机填充剂的平均粒径小于0.005μm，则成为底部填充材料的挠性降低的原因。另一方面，在上述平均粒径超过10μm时，粒径比底部填充材料密封的间隙大，会成为密封性降低的主要原因。另外，本发明中可以组合使用平均粒径互不相同的无机填充剂。另外，平均粒径是利用分光光度式的粒度分布计(HORIBA制、装置名：LA-910)求得的值。
上述无机填充剂的配合量相对于底部填充材料的有机树脂成分100重量份，优选为10～400重量份，更优选为50～250重量份。在无机填充剂的配合量小于10重量时，有时储能弹性模量降低，使封装体的应力可靠性大大受损。另一方面，在无机填充剂的配合量超过400重量份时，有时底部填充材料2的流动性降低，无法充分埋入基板和半导体元件的凹凸而导致产生空隙、裂缝。
需要说明的是，在底部填充材料2中，除了上述无机填充剂以外，还可以根据需要适当配合其他添加剂。作为其他添加剂，可以列举例如阻燃剂、硅烷偶联剂或离子捕获剂等。作为上述阻燃剂，可以列举例如三氧化锑、五氧化锑、溴化环氧树脂等。它们可以单独使用或并用两种以上。作为上述硅烷偶联剂，可以列举例如β-(3,4-环氧基环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。这些化合物可以单独使用或并用两种以上。作为上述离子捕获剂，可以列举例如水滑石类、氢氧化铋等。它们可以单独使用或并用两种以上。
此外，热固化前的上述底部填充材料2在温度23℃、湿度70％的条件下的吸水率优选为1重量％以下，更优选为0.5重量％以下。由于底部填充材料2具有如上所述的吸水率，因此水分向底部填充材料2的吸收得到抑制，可以更有效率地抑制安装半导体元件5时的空隙的产生。需要说明的是，上述吸水率的下限越小越好，优选实质上为0重量％，更优选为0重量％。
底部填充材料2的厚度(在多层情况下为总厚)没有特别的限定，但若考虑底部填充材料2的强度、半导体元件5与被粘物6之间的空间的填充性，则可以为10μm以上且100μm以下左右。需要说明的是，底部填充材料2的厚度只要考虑半导体元件5与被粘物6之间的间隙、突起电极的高度进行适当设定即可。
密封片材10的底部填充材料2优选通过隔离件来加以保护(未图示)。隔离件具有作为在供于实用之前保护底部填充材料2的保护材料的功能。隔离件在将密封片材的底部填充材料2贴合于被粘物6时被剥离。作为隔离件，也可以使用聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、或利用氟系剥离剂、长链烷基丙烯酸酯系剥离剂等剥离剂进行了表面涂覆的塑料膜或纸等。
(密封片材的制造方法)
首先，基材1可以利用现有公知的制膜方法来制膜。作为该制膜方法，可以例示出例如压延制膜法、有机溶剂中的浇注法、密闭体系中的吹塑挤出法、T模头挤出法、共挤出法、干式层压法等。
底部填充材料2例如通过以下方式来制作。首先，制备作为底部填充材料2的形成材料的胶粘剂组合物。如底部填充材料一项中所说明的那样，在该胶粘剂组合物中配合有热塑性成分、热固化性树脂、各种添加剂等。
接着，在基材隔离件上以规定厚度涂布所制备的胶粘剂组合物而形成涂布膜后，在规定条件下使该涂布膜干燥，形成底部填充材料。作为涂布方法，没有特别限定，可以列举例如辊涂、丝网涂布、凹版涂布等。另外，作为干燥条件，例如在干燥温度70～160℃、干燥时间1～5分钟的范围内进行。另外，可以在隔离件上涂布胶粘剂组合物而形成涂布膜后，在上述干燥条件下使涂布膜干燥而形成底部填充材料。然后，将底部填充材料与隔离件一起贴合到基材隔离件上。
接下来，自底部填充材料2剥离隔离件，将底部填充材料与基材贴合。贴合例如可通过压接而进行。此时，层压温度没有特别限定，例如优选为30～100℃，更优选为40～80℃。另外，线压没有特别限定，例如优选为0.98～196N/cm，更优选为9.8～98N/cm。接着，剥离底部填充材料上的基材隔离件，得到本实施方式的密封片材。
[贴合工序]
贴合工序中，以覆盖被粘物6上的与上述半导体元件的连接位置的方式将上述密封片材的底部填充材料2贴合于上述被粘物6(参照图2A)。首先，将任意设置于密封片材10的底部填充材料2上的隔离件适当剥离，使上述被粘物6的形成有导电材料7的电路面与底部填充材料2对置，通过压接将上述底部填充材料2与上述被粘物6贴合。
作为被粘物6，可使用引线框、电路基板(配线电路基板等)等各种基板、其他半导体元件。作为基板的材质，并没有特别的限定，可列举陶瓷基板、塑料基板。作为塑料基板，可列举例如环氧基板、双马来酰亚胺三嗪基板、聚酰亚胺基板、玻璃环氧基板等。
在本实施方式中，优选通过热压接进行被粘物与底部填充材料的贴合。热压接通常可通过压接辊等公知的挤压方法而进行。作为挤压条件，只要为0.2MPa以上即可，优选为0.2MPa以上且1MPa以下，更优选为0.4Pa以上且0.8Pa以下。另外，作为热压接温度的条件，只要为40℃以上即可，优选为40℃以上且120℃以下，更优选为60℃以上且100℃以下。另外，也可以在减压下进行压接。作为减压条件，只要为10000Pa以下即可，优选为5000Pa以下，更优选为1000Pa以下。需要说明的是，减压条件的下限虽无特别限定，但从生产率方面考虑，只要为10Pa以上即可。通过在规定的热压接条件下进行贴合，从而底部填充材料可充分追随被粘物表面的凹凸，可大幅减少被粘物与底部填充材料的界面的气泡，提高密接性。由此，可抑制上述界面处的空隙的产生，其结果，可高效地制造半导体元件与被粘物的连接可靠性优异的半导体装置。
另外，在结束该贴合工序的阶段，可获得被粘物6上粘贴有密封片材10的带有密封片材的基板20。在带有密封片材的基板20中，基材1作为底部填充材料2的保护材料发挥功能，因此可使带有密封片材的基板20例如待机作为用于制造半导体装置的中间品以便生产调整。
[剥离工序]
剥离工序中，自贴合于上述被粘物6的底部填充材料2剥离上述基材1(参照图2B)。基材1的剥离可通过人的手来剥离，也可以机械剥离。如上所述，将底部填充材料2对基材的90°剥离力设为特定范围，因此可以顺利地将基材1剥离而不产生底部填充材料2的断裂或变形、底部填充材料2自被粘物6的剥离。
[连接工序]
连接工序中，用上述底部填充材料2填充上述被粘物6与上述半导体元件5之间的空间，并且借助形成于上述半导体元件5的突起电极4将上述半导体元件5与上述被粘物6电连接(参照图2C)。
(半导体元件)
作为半导体元件5，可在一侧电路面上形成多个突起电极4(参照图2C)，也可以在半导体元件5的两个电路面形成突起电极(未图示)。作为凸块或导电材料等突起电极的材质，并无特别限定，例如可列举：锡-铅系金属材料、锡-银系金属材料、锡-银-铜系金属材料、锡-锌系金属材料、锡-锌-铋系金属材料等焊料类(合金)、金系金属材料、铜系金属材料等。突起电极的高度也可以根据用途而决定，通常为15～100μm左右。当然，半导体元件5中的各突起电极的高度可相同或不同。
在半导体元件的两面形成有突起电极的情况下，突起电极彼此可以被电连接，也可以未被连接。关于突起电极彼此的电连接，可列举借助被称为TSV(ThroughSiliconVia)形式的通孔的连接等。
需要说明的是，半导体元件5可通过公知的方法而制成，代表性地是，将形成有规定的电路及突起电极的半导体晶片切割而单片化，并将其拾取，由此可获得单个的半导体元件。
在本实施方式所涉及的半导体装置的制造方法中，作为底部填充材料的厚度，优选使形成于半导体元件表面的凸起电极的高度X(μm)和上述底部填充材料的厚度Y(μm)满足下述的关系。
0.5≤Y/X≤2
通过使上述突起电极的高度X(μm)与上述底部填充材料的厚度Y(μm)满足上述关系，能够充分地填充半导体元件与被粘物之间的空间，并且能够防止过量的底部填充材料从该空间溢出，并且能够防止底部填充材料对半导体元件的污染等。需要说明的是，在各突起电极的高度不同的情况下，以最高的突起电极的高度为基准。
(电连接)
作为半导体元件5与被粘物6的电连接的步骤，将半导体元件5以半导体元件5的电路面与被粘物6对置的方式，按照常法固定于被粘物6。例如，使形成于半导体元件5上的凸块(突起电极)4与粘合于被粘物6的连接垫的接合用导电材料7(焊料等)接触并进行挤压，同时使导电材料熔融，由此可确保半导体元件5与被粘物6的电连接，将半导体元件5固定于被粘物6上。在被粘物6的电路面粘贴有底部填充材料2，因此在半导体元件5与被粘物6的电连接的同时，半导体元件5与被粘物6之间的空间被底部填充材料2填充。
通常，作为连接工序中的加热条件，为100～300℃，作为加压条件，为0.5～500N。另外，也可以以多个阶段进行连接工序中的加热加压处理。例如可采用在150℃、100N下处理10秒后，在300℃、100～200N下处理10秒的步骤。通过以多个阶段进行加热加压处理，可高效地去除突起电极与焊垫间的树脂，获得更良好的金属间接合。
需要说明的是，连接工序中，使突起电极及导电材料中的一者或两者熔融，而将半导体元件5的电路面的凸块4与被粘物6的表面的导电材料7连接，但作为该凸块4及导电材料7的熔融时的温度，通常为260℃左右(例如，250℃～300℃)。对于本实施方式的密封片材而言，可通过利用环氧树脂等形成底部填充材料2，而具有能够承受该连接工序中的高温的耐热性。
通过以上步骤，可制作在被粘物6上安装有半导体元件5的半导体装置30。半导体装置30的制造中使用了具有上述规定的特性的底部填充材料，因此可防止在被粘物与底部填充材料之间、及底部填充材料与半导体元件之间产生空隙，可获得高可靠性的半导体装置。
[底部填充材料固化工序]
需要说明的是，底部填充材料2没有因连接工序中的加热处理而固化的情况下，通过加热使底部填充材料2固化。由此，可保护半导体元件5的电路面，并且可确保半导体元件5与被粘物6之间的连接可靠性。作为加热条件，并无特别限定，只要在150～200℃左右加热10～120分钟即可。需要说明的是，在底部填充材料因上述连接工序施加的热而固化的情况下，可省略本工序。
[密封工序]
接着，为了保护具备已安装的半导体元件5的半导体装置30整体，还可以进行密封工序。密封工序使用密封树脂来进行。作为此时的密封条件，并无特别限定，通常，通过在175℃下进行60秒～90秒的加热来进行密封树脂的热固化，但本发明并不限定于此，例如可在165℃～185℃下固化数分钟。
作为上述密封树脂，只要是具有绝缘性的树脂(绝缘树脂)，则没有特别的限制，可以从公知的密封树脂等密封材料中适当选择使用，但更优选具有弹性的绝缘树脂。作为密封树脂，可列举例如含有环氧树脂的树脂组合物等。作为环氧树脂，可列举上述例示的环氧树脂等。另外，作为由含有环氧树脂的树脂组合物形成的密封树脂，就其树脂成分而言，除环氧树脂以外，还可以含有环氧树脂以外的热固化性树脂(酚醛树脂等)、热塑性树脂等。需要说明的是，作为酚醛树脂，也可以以环氧树脂的固化剂的形式来利用，作为这样的酚醛树脂，可列举上述例示的酚醛树脂等。
[半导体装置]
接着，参照附图对使用该密封片材获得的半导体装置进行说明(参照图2C)。本实施方式的半导体装置30中，半导体元件5与被粘物6借助形成于半导体元件5上的凸块(突起电极)4及设置于被粘物6上的导电材料7而被电连接。另外，在半导体元件5与被粘物6之间，以填充其空间的方式配置底部填充材料2。半导体装置30采用使用密封片材10的上述制造方法而获得，因此可抑制在半导体元件5与底部填充材料2之间产生空隙。因此，半导体元件5的表面保护、及半导体元件5与被粘物6之间的空间的填充达到充分的水平，作为半导体装置30可发挥较高的可靠性。
实施例
以下，例示性地详细说明本发明的优选的实施例。但是，该实施例中记载的材料或配合量等只要无特别限定的记载，则并非将本发明的范围仅限定于此。另外，份表示重量份。
[实施例1～4及比较例1～3]
(密封片材的制作)
将以下成分以表1所示的比例溶解于甲基乙基酮中，制备固体成分浓度为23.6～60.6重量％的胶粘剂组合物的溶液。
环氧树脂1(25℃下为液状)：商品名“Epikote828”，JER株式会社制造
环氧树脂2：商品名“Epikote1004”，JER株式会社制造
酚醛树脂1：商品名“MilexXLC-4L”，三井化学株式会社制造
酚醛树脂2(25℃下为液状)：商品名“MEH-8005”，明和化成株式会社制造
弹性体1：以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯系聚合物(商品名“PagocloneW-197CM”，根上工业株式会社制造)
弹性体2：以丙烯酸丁酯-丙烯腈为主成分的丙烯酸酯系聚合物(商品名“SG-P3”，NagaseChemtex株式会社制造)
填料：球状二氧化硅(商品名“SO-25R”，株式会社Admatechs制造)
有机酸：“2-苯基苯甲酸”(东京化成株式会社制造)
固化剂：咪唑催化剂(商品名“2MA-OK”，四国化成株式会社制造)
将各胶粘剂组合物的溶液涂布于作为基材的DiafoilMRA50(三菱树脂制造)上，在130℃下干燥2分钟，形成厚度30μm的底部填充材料A～G，由此制作实施例及比较例的密封片材。
[评价]
使用实施例及比较例的密封片材(底部填充材料的热固化前)进行以下评价。将各结果示于表1。
(90°剥离力的测定)
对将底部填充材料自基材剥离时的剥离力(mN/20mm)进行测定。具体而言，将密封片材切割成长度100mm×宽度20mm而制成试验片。将试验片设置于拉伸试验机(商品名“AutographAGS-H”，(株)岛津制作所制造)上，在温度25±2℃、剥离角度90°、剥离速度300mm/min、夹盘间距离100mm的条件下进行T型剥离试验(JISK6854-3)。
(断裂延伸率的测定)
使用辊式层压机(装置名“MRK-600”，MCK株式会社制造)在70℃、0.2MPa下层叠底部填充材料，由此获得厚度120μm的测定用底部填充材料。将测定用底部填充材料切断成宽度10mm×长度30mm而制成试验片后，使用“AutographASG-50D型”(岛津制作所制造)作为拉伸试验机，在拉伸速度50mm/min、夹盘间距离10mm、25℃下进行拉伸试验。求出试验片断裂时的夹盘间距离相对于试验前的夹盘间距离的之比设为断裂延伸率(％)。
(最低熔融粘度的测定)
底部填充材料的最低熔融粘度的测定是使用流变仪(HAAKE公司制造，RS-1)通过平行板法进行测定所得的值。更详细而言，在间隙100μm、旋转板直径20mm、旋转速度5s-1、升温速度10℃/min的条件下，在40℃至200℃的范围内测定熔融粘度，将此时获得的40℃以上且低于100℃的范围及100℃以上且200℃以下的范围内的熔融粘度的最低值设为各温度范围内的最低熔融粘度。
(底部填充材料的作业性及对基材的剥离性的评价)
将密封片材切割成长度7.5mm×宽度7.5mm，将底部填充材料侧与BGA基板对置并将两者贴合。贴合在70℃、1000Pa的减压下使用辊式层压机以线压0.2MPa进行。之后，自底部填充材料剥离基材，而制作带有底部填充材料的基板。关于底部填充材料的作业性，将在进行底部填充材料的切割至贴合时可无问题地进行的情况评价为“○”，将产生底部填充材料的变形或断裂、底部填充材料的自基材的剥离等的情况评价为“×”。另外，关于对基材的剥离性，将自底部填充材料剥离基材时可无问题地剥离基材的情况评价为“○”，将底部填充材料移动至基材或底部填充材料自基板剥离的情况评价为“×”。
(安装时的空隙的产生的评价)
通过下述热压接条件，在7.3mm见方、厚度500μm的半导体芯片的凸块形成面与BGA基板对置的状态下将半导体芯片热压接于BGA基板而进行半导体芯片的安装。由此，获得半导体芯片安装于BGA基板上的半导体装置。
＜热压接条件＞
拾取装置：商品名“FCB-3”，Panasonic制造
加热温度：260℃
载荷：30N
保持时间：10秒
空隙的产生的评价是通过如下方式进行：在以上述步骤制作的半导体装置的半导体芯片与底部填充材料之间进行切断及研磨，使用图像识别装置(HamamatsuPhotonic公司制造，商品名“C9597-11”，1000倍)观察研磨面，算出空隙部分的合计面积相对于底部填充材料的面积的比例。将相对于研磨面的观察图像中的底部填充材料的面积，空隙部分的合计面积为0～5％的情况评价为“○”，将超过5％的情况评价为“×”。
[表1]
在实施例的底部填充材料中，底部填充材料的作业性及自基材的剥离性良好，安装时的空隙也得到充分抑制。另一方面，比较例1的底部填充材料的断裂延伸率过小，在作业时产生断裂。比较例2的底部填充材料的最低熔融粘度过高，因此除了在作业时产生基材的剥离以外，在安装半导体芯片时底部填充材料对半导体芯片的凹凸的埋入性不充分而产生空隙。此外，比较例3的底部填充材料的最低熔融粘度过低、粘合性提高，因此除了作业性降低之外，在安装时由于自底部填充材料的逸气成分而产生空隙。
1基材
2底部填充材料
3半导体晶片
4突起电极
5半导体元件
6被粘物
7导电材料
10密封片材
20带有密封片材的基板
30半导体装置

Claims (9)

1.一种密封片材，其具备基材、及设置于该基材上的具有以下特性的底部填充材料，
自所述基材的90°剥离力：1mN/20mm以上且50mN/20mm以下
25℃下的断裂延伸率：10％以上
40℃以上且低于100℃的最低粘度：20000Pa·s以下
100℃以上且200℃以下的最低粘度：100Pa·s以上。
2.如权利要求1所述的密封片材，其中，
所述底部填充材料包含热塑性树脂及热固化性树脂。
3.如权利要求2所述的密封片材，其中，
所述热固化性树脂包含25℃下为液状的热固化性树脂，
且所述25℃下为液状的热固化性树脂的重量相对于所述热固化性树脂的总重量的比例为5重量％以上且40重量％以下。
4.如权利要求2或3所述的密封片材，其中，
所述热塑性树脂包含丙烯酸系树脂，所述热固化性树脂包含环氧树脂及酚树脂。
5.如权利要求1～4中任一项所述的密封片材，其中，
所述底部填充材料包含助焊剂。
6.如权利要求1～5中任一项所述的密封片材，其中，
所述基材包含热塑性树脂。
7.如权利要求6所述的密封片材，其中，
所述热塑性树脂为聚对苯二甲酸乙二醇酯。
8.一种半导体装置的制造方法，其为制造具备被粘物、与该被粘物电连接的半导体元件、及填充于该被粘物与该半导体元件之间的空间的底部填充材料的半导体装置的制造方法，
所述半导体装置的制造方法包括：
准备工序，准备权利要求1～7中任一项所述的密封片材；
贴合工序，以覆盖所述被粘物上的与所述半导体元件的连接位置的方式将所述密封片材的底部填充材料贴合于所述被粘物；
剥离工序，自贴合于所述被粘物的底部填充材料将所述基材剥离；及
连接工序，用所述底部填充材料填充所述被粘物与所述半导体元件之间的空间，并且借助形成于所述半导体元件上的突起电极将所述半导体元件与所述被粘物电连接。
9.一种带有密封片材的基板，其具备基板、及粘贴于该基板的权利要求1～7中任一项所述的密封片材。
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Application publication date: 20151118