CN105071773A - Wake-flow feedback widely-tunable voltage-controlled oscillator - Google Patents
Wake-flow feedback widely-tunable voltage-controlled oscillator Download PDFInfo
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Abstract
The invention discloses a wake-flow feedback widely-tunable voltage-controlled oscillator. The wake-flow feedback widely-tunable voltage-controlled oscillator comprises one oscillation core circuit, one wake-flow array circuit and two output driving circuits, wherein the two output driving circuits are completely same in structure; the oscillation core circuit is in bridged connection between the first output driving circuit and the second output driving circuit; the first output driving circuit forms one output end of the oscillator; the second output driving circuit forms another output end of the oscillator; one end of the wake-flow array circuit is connected to bias voltage and the first output driving circuit respectively; and the other end of the wake-flow array circuit is connected to bias voltage and the second output driving circuit respectively. By adopting a wake-flow source array, which is changed along with access of a switching capacitor, the voltage-controlled oscillator still has better phase noise performances within a wide tuning range; simultaneously, feedback offset is provided from output driving drains as grids of main wake-flow tubes NM21 and NM22 through a blocking capacitor; flicker noise introduced by the wake-flow tubes is reduced; and thus, the phase noise performances are further optimized.
Description
Technical field
The invention belongs to integrated circuit (IC) design field, be specifically related to a kind of wake flow feedback broad tuning voltage controlled oscillator.
Background technology
Voltage controlled oscillator (VCO, VoltageControlledOscillator) as the important module of the circuit such as clock recovery, phase-locked loop and frequency synthesizer, be widely used in mobile phone, military channels, satellite communication terminal, radio digital communication isoelectronic series system.Oscillator circuit structure generally has two kinds: circular oscillator and LC oscillator.Because LC oscillator circuit structure is simple, there is higher phase noise performance, apply the most widely so obtain in high-performance SOC (system on a chip).
In traditional differential negative resistance voltage controlled oscillator, wake flow pipe has very large impact to phase noise, particularly when less frequency offset.Calendar year 2001, the people such as E.Hegazi propose the noise that several method brings to suppress wake flow source in document AfilteringtechniquetolowerLCoscillatorphasenoise, and wherein one is noise filtering technique.This technology improves phase noise performance by the second harmonic of filtering frequency of oscillation, but is the introduction of extra inductance, increases chip area, can not determine whether it decreases the contribution of flicker noise to phase noise simultaneously.At L.Fanori, in the document A2.5-to-3.3GHzCMOSClass-DVCO of P.Andreani, reduce phase noise by removing wake flow source, but the flicker noise of dynatron directly can inject resonant cavity, make a pair of oscillators power supply noise responsive, this have impact on the performance of phase noise simultaneously.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of wake flow feedback broad tuning voltage controlled oscillator, and it can effectively reduce the flicker noise of wake flow pipe.
For solving the problem, the present invention is achieved by the following technical solutions:
A kind of wake flow feedback broad tuning voltage controlled oscillator, comprise oscillator body, wherein oscillator body comprises 1 vibration core circuit and 2 identical output driving circuits of structure; The two ends of vibration core circuit connect the first output driving circuit and the second output driving circuit respectively; First output driving circuit forms an output of oscillator body, and the second output driving circuit forms another output of oscillator body; The core circuit that wherein vibrates comprises some switching capacity branch roads in parallel; Its difference is, also comprises 1 wake flow array circuit further; Wherein wake flow array circuit comprises some wake flow branch roads in parallel, and the number of wake flow branch road is identical with the number of switching capacity branch road; One end of this wake flow array circuit connects the first output driving circuit and external bias voltage Vb simultaneously, and the other end of wake flow array circuit connects the second output driving circuit and external bias voltage Vb simultaneously.
Above-mentioned wake flow array circuit comprises 2 wake flow source nmos pass transistors and some wake flow branch roads in parallel.After first wake flow source nmos pass transistor NM22 is connected with the drain electrode of the second wake flow source nmos pass transistor NM21, then be connected first the vibrate source electrode of nmos pass transistor NM2 of nmos pass transistor NM1 and second that vibrates and connect; After first wake flow source nmos pass transistor NM22 is connected with the source electrode of the second wake flow source nmos pass transistor NM21, then electrical ground; The grid of the first wake flow source nmos pass transistor NM22 is divided into 2 tunnels, and a road connects the first output driving circuit, and a road meets bias voltage Vb; The grid of the second wake flow source nmos pass transistor NM21 is divided into 2 tunnels, and a road connects the second output driving circuit, and a road meets bias voltage Vb; The number of wake flow branch road is identical with the number of switching capacity branch road; Each wake flow branch road comprises 3 wake flow nmos pass transistors and 1 inverter; The input of inverter is connected corresponding control voltage with the grid of the second wake flow nmos pass transistor simultaneously; The source electrode of the second wake flow nmos pass transistor meets DC offset voltage Vb; The drain electrode of the second wake flow nmos pass transistor, the grid of the first wake flow nmos pass transistor are connected with the drain electrode of the 3rd wake flow nmos pass transistor; The grid of output termination the 3rd wake flow nmos pass transistor of inverter; The drain electrode of the first wake flow nmos pass transistor connects the source electrode of the first vibration nmos pass transistor NM1 and second vibration nmos pass transistor NM2; The source electrode electrical ground of the first wake flow nmos pass transistor and the 3rd wake flow nmos pass transistor.
Above-mentioned vibration core circuit comprises negative resistance oscillation unit, switched capacitor array unit, resonant inductance ind and variable capacitance branch road.Negative resistance oscillation unit comprises cross-linked first vibration nmos pass transistor NM1 and second vibration nmos pass transistor NM2, and the first vibration PMOS transistor PM1 and second vibration PMOS transistor PM2; First vibration PMOS transistor PM1 connects the first output driving circuit after being connected with the drain electrode of the first vibration nmos pass transistor NM1; Second vibration PMOS transistor PM2 connects the second output driving circuit after being connected with the drain electrode of the second vibration nmos pass transistor NM2; The source electrode of the first vibration PMOS transistor PM1 and second vibration PMOS transistor PM2 connects power supply; The source electrode of the first vibration nmos pass transistor NM1 and second vibration nmos pass transistor NM2 connects wake flow array circuit.One end and second of resonant inductance ind PMOS transistor PM2 that vibrates is connected with the second drain electrode of vibrating nmos pass transistor NM2, and the other end and the first PMOS transistor PM1 that vibrates is connected with the first drain electrode of vibrating nmos pass transistor NM1.Switched capacitor array unit comprises some switching capacity branch roads in parallel, and each switching capacity branch road includes switch NMOS transistor, switch resistance that switching capacity that 2 capacitances are equal is equal with 2 resistances; The grid of switch NMOS transistor connects corresponding control voltage; The source electrode of one end connecting valve nmos pass transistor of a switching capacity in 2 switching capacities, the other end and the second PMOS transistor PM2 that vibrates is connected with the second drain electrode of vibrating nmos pass transistor NM2; The drain electrode of one end connecting valve nmos pass transistor of another switching capacity in 2 switching capacities, the other end and the first PMOS transistor PM1 that vibrates is connected with the first drain electrode of vibrating nmos pass transistor NM1; The source electrode of one end connecting valve nmos pass transistor of a switch resistance in 2 switch resistances, other end electrical ground; The drain electrode of one end connecting valve nmos pass transistor of another switch resistance in 2 switch resistances, other end electrical ground.Variable capacitance branch road comprises the first variable capacitance Cv1 and the second variable capacitance Cv2; After first variable capacitance Cv1 and the second variable capacitance Cv2 connects, its one end and second PMOS transistor PM2 that vibrates is connected with the second drain electrode of vibrating nmos pass transistor NM2, and the other end and the first PMOS transistor PM1 that vibrates is connected with the first drain electrode of vibrating nmos pass transistor NM1; First variable capacitance Cv1 is connected with tuning voltage Vtune with the end that is connected of the second variable capacitance Cv2.
Each output driving circuit includes 1 driving N MOS transistor, 1 driving PMOS transistor, 2 driving electric capacity and 1 driving resistance; The source electrode of PMOS transistor is driven to connect power supply; The source electrode electrical ground of driving N MOS transistor; After driving N MOS transistor is connected with the grid of driving PMOS transistor, electric capacity is driven to be connected with vibration core circuit through one; Driving N MOS transistor is divided into 2 tunnels after being connected with the drain electrode of driving PMOS transistor, and a road drives through another output forming oscillator body after electric capacity, and another road connects wake flow array circuit; Drive one end of resistance to connect driving N MOS transistor and drive the drain electrode of PMOS transistor, the other end connects driving N MOS transistor and drives the grid of PMOS transistor.
Described switching capacity branch road and wake flow branch road are 4, and wherein the ratio of the capacitance of the switching capacity of 4 switching capacity branch roads is 1:2:4:8, and the resistance of the switch resistance of these 4 switching capacity branch roads is equal.
The present invention proposes a kind of wake flow source structure improving the phase noise of voltage controlled oscillator performance of wide tunable range, have employed the wake flow source array in company with switching capacity access change, make voltage controlled oscillator can have better phase noise performance in wide tuning range; Drive drain electrode to provide feedback biasing for the grid of main wake flow pipe NM21, NM22 by capacitance from output simultaneously, reduce the flicker noise that wake flow pipe is introduced, optimize phase noise performance further.
Compared with prior art, the present invention has following features:
1, propose a kind of wake flow source array structure of band wake flow feedback newly, this circuit, when significantly not increasing chip area, in the wide tunable range of 2GHz, reaches good phase noise performance;
2, wide tunable range is divided into 16 continuous print sub-bands, wake flow array makes each sub-band be operated in optimum current, improves noiseproof feature.
Accompanying drawing explanation
Fig. 1 is the structure chart of the circuit of a kind of wake flow feedback broad tuning voltage controlled oscillator;
Fig. 2 is the tuning curve figure of a kind of wake flow feedback broad tuning voltage controlled oscillator.
Embodiment
A kind of wake flow feedback broad tuning voltage controlled oscillator, as shown in Figure 1, comprises 1 vibration core circuit, 2 output driving circuits and 1 wake flow array circuit.The two ends of vibration core circuit connect the first output driving circuit and the second output driving circuit respectively.First output driving circuit forms an output of oscillator body, and the second output driving circuit forms another output of oscillator body.One end of wake flow array circuit connects bias voltage and the first output driving circuit simultaneously, and the other end of wake flow array circuit connects bias voltage and the second output driving circuit simultaneously.
Above-mentioned vibration core circuit is for realizing coarse adjustment and the fine tuning of resonance frequency.Vibration core circuit comprises negative resistance oscillation unit, switched capacitor array unit, resonant inductance ind and variable capacitance branch road.
Negative resistance oscillation unit comprises cross-linked first vibration nmos pass transistor NM1 and second vibration nmos pass transistor NM2, and the first vibration PMOS transistor PM1 and second vibration PMOS transistor PM2.First vibration PMOS transistor PM1 connects the first output driving circuit after being connected with the drain electrode of the first vibration nmos pass transistor NM1.Second vibration PMOS transistor PM2 connects the second output driving circuit after being connected with the drain electrode of the second vibration nmos pass transistor NM2.The source electrode of the first vibration PMOS transistor PM1 and second vibration PMOS transistor PM2 connects power supply.The source electrode of the first vibration nmos pass transistor NM1 and second vibration nmos pass transistor NM2 connects wake flow array circuit.
One end and second of resonant inductance ind PMOS transistor PM2 that vibrates is connected with the second drain electrode of vibrating nmos pass transistor NM2, and the other end and the first PMOS transistor PM1 that vibrates is connected with the first drain electrode of vibrating nmos pass transistor NM1.
Switched capacitor array unit comprises some switching capacity branch roads in parallel, and each switching capacity branch road includes switch NMOS transistor, switch resistance that switching capacity that 2 capacitances are equal is equal with 2 resistances.The grid of switch NMOS transistor connects corresponding control voltage a, b, c or d.The source electrode of one end connecting valve nmos pass transistor of a switching capacity in 2 switching capacities, the other end and the second PMOS transistor PM2 that vibrates is connected with the second drain electrode of vibrating nmos pass transistor NM2.The drain electrode of one end connecting valve nmos pass transistor of another switching capacity in 2 switching capacities, the other end and the first PMOS transistor PM1 that vibrates is connected with the first drain electrode of vibrating nmos pass transistor NM1.The source electrode of one end connecting valve nmos pass transistor of a switch resistance in 2 switch resistances, other end electrical ground.The drain electrode of one end connecting valve nmos pass transistor of another switch resistance in 2 switch resistances, other end electrical ground.In the present invention, a switched capacitor array unit comprises 4 switching capacity branch roads, and the ratio of the capacitance of the switching capacity of these 4 switching capacity branch roads is 1:2:4:8, and the resistance of the switch resistance of these 4 switching capacity branch roads is equal.Switched capacitor array unit is in parallel with resonant inductance ind, and according to the rule of specifying (control voltage a, b, c or d) change self-capacitance, to carry out coarse adjustment to the resonance frequency of vibration core circuit.
Variable capacitance branch road comprises the first variable capacitance Cv1 and the second variable capacitance Cv2.After first variable capacitance Cv1 and the second variable capacitance Cv2 connects, its one end and second PMOS transistor PM2 that vibrates is connected with the second drain electrode of vibrating nmos pass transistor NM2, and the other end and the first PMOS transistor PM1 that vibrates is connected with the first drain electrode of vibrating nmos pass transistor NM1.First variable capacitance Cv1 is connected with tuning voltage Vtune with the end that is connected of the second variable capacitance Cv2.Variable capacitance branch road is in parallel with resonant inductance ind, and changes self capacitance according to the change of a tuning voltage Vtune, to carry out fine tuning to the resonance frequency of vibration core circuit.
Above-mentioned wake flow array circuit makes access electric current with access capacitance variations by numerical control control bit, realizes good phase noise.Wake flow array circuit comprises 2 wake flow source nmos pass transistors and some wake flow branch roads in parallel.After first wake flow source nmos pass transistor NM22 is connected with the drain electrode of the second wake flow source nmos pass transistor NM21, then be connected first the vibrate source electrode of nmos pass transistor NM2 of nmos pass transistor NM1 and second that vibrates and connect.After first wake flow source nmos pass transistor NM22 is connected with the source electrode of the second wake flow source nmos pass transistor NM21, then electrical ground.The grid of the first wake flow source nmos pass transistor NM22 is divided into 2 tunnels, and a road one electric capacity C14 connects the first output driving circuit, and a road one resistance R11 meets bias voltage Vb.The grid of the second wake flow source nmos pass transistor NM21 is divided into 2 tunnels, and a road connects the second output driving circuit through another electric capacity C13, and a road meets bias voltage Vb through another resistance R12.The number of wake flow branch road is identical with the number of switching capacity branch road.Each wake flow branch road comprises 3 wake flow nmos pass transistors and 1 inverter.The input of inverter is connected corresponding control voltage a, b, c or d with the grid of the second wake flow nmos pass transistor simultaneously.The source electrode of the second wake flow nmos pass transistor meets DC offset voltage Vb.The drain electrode of the second wake flow nmos pass transistor, the grid of the first wake flow nmos pass transistor are connected with the drain electrode of the 3rd wake flow nmos pass transistor.The grid of output termination the 3rd wake flow nmos pass transistor of inverter.The drain electrode of the first wake flow nmos pass transistor connects the source electrode of the first vibration nmos pass transistor NM1 and second vibration nmos pass transistor NM2.The source electrode electrical ground of the first wake flow nmos pass transistor and the 3rd wake flow nmos pass transistor.Second wake flow nmos pass transistor and the 3rd wake flow nmos pass transistor at contrary on off state, control conducting and the shutoff of wake flow pipe NM9 as MOS switch with this.
The structure of 2 output driving circuits is identical, and each output driving circuit includes 1 driving N MOS transistor, 1 driving PMOS transistor, 2 driving electric capacity and 1 driving resistance.The source electrode of PMOS transistor is driven to connect power supply.The source electrode electrical ground of driving N MOS transistor.After driving N MOS transistor is connected with the grid of driving PMOS transistor, electric capacity is driven to be connected with vibration core circuit through one.Driving N MOS transistor is divided into 2 tunnels after being connected with the drain electrode of driving PMOS transistor, and a road drives through another output forming output signal (outL+ or outL-) after electric capacity, and another road connects wake flow array circuit.Drive one end of resistance to connect driving N MOS transistor and drive the drain electrode of PMOS transistor, the other end connects driving N MOS transistor and drives the grid of PMOS transistor.
The voltage controlled oscillator operation principle that the present invention mentions is as follows, and differential complement metal-oxide-semiconductor LC voltage controlled oscillator starting condition for oscillation must meet
In formula, Rp is the parallel equivalent resistance of LC resonant circuit, and gmn is the mutual conductance of NMOS dynatron, and gmp is the mutual conductance of PMOS dynatron, the electric current that current source provides PMOS to pipe and NMOS to pipe between obtain multiplexing, reduce the power consumption of circuit; The negative transconductance of NM1, NM2 pipe and PM1, PM2 pipe can compensate the circuit loss in vibration, for vibration provides energy.Voltage-controlled voltage Vtune controls variable capacitance Cv, reaches the object controlling frequency of oscillation; The coarse tuning of the frequency adopting tetrad weighted switched capacitance array to realize as shown in Figure 2, reduce the figure place of digital controlled signal, a, b, c, d are 4-digit number control signals, whole frequency range are divided into 16 sub-bands.The size of current needed due to each sub-band is different, and wake flow array can make each sub-band be operated in suitable electric current, reaches good phase noise.If 1.8V is high level 1, low level is 0, and when a, b, c, d value is 1111, oscillator output band is the homologous thread of Fig. 2 extreme lower position; When value is all 0000, oscillator output band is the homologous thread of Fig. 2 extreme higher position; When a, b, c, d get 1111, oscillator needs electric current maximum, the whole conducting access of wake flow array; The electric current that oscillator needs when value is all 0000 is minimum, and wake flow array all turns off, and electric current is only provided by NM21, NM22.
It is emphasized that: be only preferred embodiment of the present invention above, not limitation of the present invention, every above embodiment is done according to technical spirit of the present invention any simple modification, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (4)
1. a wake flow feedback broad tuning voltage controlled oscillator, comprise oscillator body, wherein oscillator body comprises 1 vibration core circuit and 2 identical output driving circuits of structure; The two ends of vibration core circuit connect the first output driving circuit and the second output driving circuit respectively; First output driving circuit forms an output of oscillator body, and the second output driving circuit forms another output of oscillator body; The core circuit that wherein vibrates comprises some switching capacity branch roads in parallel; It is characterized in that: also comprise 1 wake flow array circuit further; Wherein wake flow array circuit comprises some wake flow branch roads in parallel, and the number of wake flow branch road is identical with the number of switching capacity branch road; One end of this wake flow array circuit connects the first output driving circuit and external bias voltage Vb simultaneously, and the other end of wake flow array circuit connects the second output driving circuit and external bias voltage Vb simultaneously.
2. a kind of wake flow feedback broad tuning voltage controlled oscillator according to claim 1, is characterized in that: above-mentioned wake flow array circuit comprises 2 wake flow source nmos pass transistors and some wake flow branch roads in parallel;
After first wake flow source nmos pass transistor NM22 is connected with the drain electrode of the second wake flow source nmos pass transistor NM21, then be connected first the vibrate source electrode of nmos pass transistor NM2 of nmos pass transistor NM1 and second that vibrates and connect; After first wake flow source nmos pass transistor NM22 is connected with the source electrode of the second wake flow source nmos pass transistor NM21, then electrical ground; The grid of the first wake flow source nmos pass transistor NM22 is divided into 2 tunnels, and a road connects the first output driving circuit, and a road meets bias voltage Vb; The grid of the second wake flow source nmos pass transistor NM21 is divided into 2 tunnels, and a road connects the second output driving circuit, and a road meets bias voltage Vb; The number of wake flow branch road is identical with the number of switching capacity branch road; Each wake flow branch road comprises 3 wake flow nmos pass transistors and 1 inverter; The input of inverter is connected corresponding control voltage with the grid of the second wake flow nmos pass transistor simultaneously; The source electrode of the second wake flow nmos pass transistor meets DC offset voltage Vb; The drain electrode of the second wake flow nmos pass transistor, the grid of the first wake flow nmos pass transistor are connected with the drain electrode of the 3rd wake flow nmos pass transistor; The grid of output termination the 3rd wake flow nmos pass transistor of inverter; The drain electrode of the first wake flow nmos pass transistor connects the source electrode of the first vibration nmos pass transistor NM1 and second vibration nmos pass transistor NM2; The source electrode electrical ground of the first wake flow nmos pass transistor and the 3rd wake flow nmos pass transistor.
3. a kind of wake flow feedback broad tuning voltage controlled oscillator according to claim 1, is characterized in that: above-mentioned vibration core circuit comprises negative resistance oscillation unit, switched capacitor array unit, resonant inductance ind and variable capacitance branch road;
Negative resistance oscillation unit comprises cross-linked first vibration nmos pass transistor NM1 and second vibration nmos pass transistor NM2, and the first vibration PMOS transistor PM1 and second vibration PMOS transistor PM2; First vibration PMOS transistor PM1 connects the first output driving circuit after being connected with the drain electrode of the first vibration nmos pass transistor NM1; Second vibration PMOS transistor PM2 connects the second output driving circuit after being connected with the drain electrode of the second vibration nmos pass transistor NM2; The source electrode of the first vibration PMOS transistor PM1 and second vibration PMOS transistor PM2 connects power supply; The source electrode of the first vibration nmos pass transistor NM1 and second vibration nmos pass transistor NM2 connects wake flow array circuit;
One end and second of resonant inductance ind PMOS transistor PM2 that vibrates is connected with the second drain electrode of vibrating nmos pass transistor NM2, and the other end and the first PMOS transistor PM1 that vibrates is connected with the first drain electrode of vibrating nmos pass transistor NM1;
Switched capacitor array unit comprises some switching capacity branch roads in parallel, and each switching capacity branch road includes switch NMOS transistor, switch resistance that switching capacity that 2 capacitances are equal is equal with 2 resistances; The grid of switch NMOS transistor connects corresponding control voltage; The source electrode of one end connecting valve nmos pass transistor of a switching capacity in 2 switching capacities, the other end and the second PMOS transistor PM2 that vibrates is connected with the second drain electrode of vibrating nmos pass transistor NM2; The drain electrode of one end connecting valve nmos pass transistor of another switching capacity in 2 switching capacities, the other end and the first PMOS transistor PM1 that vibrates is connected with the first drain electrode of vibrating nmos pass transistor NM1; The source electrode of one end connecting valve nmos pass transistor of a switch resistance in 2 switch resistances, other end electrical ground; The drain electrode of one end connecting valve nmos pass transistor of another switch resistance in 2 switch resistances, other end electrical ground;
Variable capacitance branch road comprises the first variable capacitance Cv1 and the second variable capacitance Cv2; After first variable capacitance Cv1 and the second variable capacitance Cv2 connects, its one end and second PMOS transistor PM2 that vibrates is connected with the second drain electrode of vibrating nmos pass transistor NM2, and the other end and the first PMOS transistor PM1 that vibrates is connected with the first drain electrode of vibrating nmos pass transistor NM1; First variable capacitance Cv1 is connected with tuning voltage Vtune with the end that is connected of the second variable capacitance Cv2.
4. a kind of wake flow feedback broad tuning voltage controlled oscillator according to claim 1, is characterized in that: each output driving circuit includes 1 driving N MOS transistor, 1 driving PMOS transistor, 2 driving electric capacity and 1 driving resistance; The source electrode of PMOS transistor is driven to connect power supply; The source electrode electrical ground of driving N MOS transistor; After driving N MOS transistor is connected with the grid of driving PMOS transistor, electric capacity is driven to be connected with vibration core circuit through one; Driving N MOS transistor is divided into 2 tunnels after being connected with the drain electrode of driving PMOS transistor, and a road drives through another output forming oscillator body after electric capacity, and another road connects wake flow array circuit; Drive one end of resistance to connect driving N MOS transistor and drive the drain electrode of PMOS transistor, the other end connects driving N MOS transistor and drives the grid of PMOS transistor.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108631758A (en) * | 2017-03-17 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | Switched-capacitor circuit, radio-frequency devices and the method for forming switched-capacitor circuit |
| CN108809302A (en) * | 2018-06-11 | 2018-11-13 | 清华大学 | A kind of phase-locked loop frequency integrator and control method for frequency |
| CN110708019A (en) * | 2019-12-13 | 2020-01-17 | 成都铱通科技有限公司 | Compact millimeter wave voltage-controlled oscillator |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1589001A (en) * | 2004-10-15 | 2005-03-02 | 东南大学 | CMOS single variable frequency circuit |
| WO2008067504A2 (en) * | 2006-11-30 | 2008-06-05 | Intellectual Ventures Holding 40 Llc | Voltage controlled oscillator |
| CN201869187U (en) * | 2010-12-02 | 2011-06-15 | 苏州云芯微电子科技有限公司 | Common-mode-point controllable ring voltage-controlled oscillator |
| CN204967763U (en) * | 2015-08-28 | 2016-01-13 | 桂林电子科技大学 | Wake flow feedback broad tuning voltage controlled oscillator |
-
2015
- 2015-08-28 CN CN201510540317.9A patent/CN105071773B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1589001A (en) * | 2004-10-15 | 2005-03-02 | 东南大学 | CMOS single variable frequency circuit |
| WO2008067504A2 (en) * | 2006-11-30 | 2008-06-05 | Intellectual Ventures Holding 40 Llc | Voltage controlled oscillator |
| CN201869187U (en) * | 2010-12-02 | 2011-06-15 | 苏州云芯微电子科技有限公司 | Common-mode-point controllable ring voltage-controlled oscillator |
| CN204967763U (en) * | 2015-08-28 | 2016-01-13 | 桂林电子科技大学 | Wake flow feedback broad tuning voltage controlled oscillator |
Non-Patent Citations (1)
| Title |
|---|
| 常昌远 等: "一种低相位噪声LC压控振荡器的设计与实现", 《东南大学学报（自然科学版）》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108631758A (en) * | 2017-03-17 | 2018-10-09 | 中芯国际集成电路制造(上海)有限公司 | Switched-capacitor circuit, radio-frequency devices and the method for forming switched-capacitor circuit |
| CN108809302A (en) * | 2018-06-11 | 2018-11-13 | 清华大学 | A kind of phase-locked loop frequency integrator and control method for frequency |
| CN110708019A (en) * | 2019-12-13 | 2020-01-17 | 成都铱通科技有限公司 | Compact millimeter wave voltage-controlled oscillator |
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