CN105051890A - 增强片和二次安装半导体装置的制造方法 - Google Patents
增强片和二次安装半导体装置的制造方法 Download PDFInfo
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- CN105051890A CN105051890A CN201480013601.4A CN201480013601A CN105051890A CN 105051890 A CN105051890 A CN 105051890A CN 201480013601 A CN201480013601 A CN 201480013601A CN 105051890 A CN105051890 A CN 105051890A
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- semiconductor device
- reinforcing sheet
- resin layer
- adhesive phase
- thermoset resin
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Classifications
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Abstract
本发明提供能够制作耐冲击性优良的二次安装半导体装置、并且能够实现二次安装工序的效率化的增强片及使用该增强片的二次安装半导体装置的制造方法。本发明为一种增强片,用于对在第1主面上形成有突起电极的一次安装半导体装置经由该突起电极与布线基板电连接而成的二次安装半导体装置进行增强,该增强片依次具备基材层、粘合剂层和热固性树脂层,所述粘合剂层的断裂强度为0.07MPa以上,且60~100℃下的熔融粘度为4000Pa·s以下。
Description
技术领域
本发明涉及增强片和二次安装半导体装置的制造方法。
背景技术
随着电子设备的小型、薄型化,高密度安装的要求、特别是在移动电话等便携式电子设备用途中急剧增加。因此,半导体封装中适于高密度安装的表面安装型已代替以往的销***型成为主流。该表面安装型将对半导体元件进行树脂密封而成的半导体装置经由焊球等连接用端子直接焊接于二次安装用的印刷基板等。
在此,在便携式电子设备用途中常常会施加落下冲击,因此,要求耐冲击性。对此,在上述的二次安装中,为了确保一次安装半导体装置与布线基板之间的连接可靠性,对一次安装半导体装置与基板之间的空间进行密封树脂的填充。作为这样的密封树脂,广泛使用液态的密封树脂,但由于其为液态,因此,难以调整密封树脂的注入位置、注入量,或者因二次安装用的较大的焊球而使焊球与基板之间的间隔变宽,注入量变多。因此,提出了使用热固化树脂片集中地对焊球与二次安装基板的连接部附近的区域而非半导体装置与基板之间的整个空间进行增强的技术(专利文献1)。
现有技术文献
专利文献
专利文献1:日本专利第4699189号
发明内容
发明所要解决的问题
但是,已经阐明,施加于便携式电子设备的落下冲击等使焊球的一次安装基板侧的根基部分而非焊接连接部产生裂纹,有时引起连接不良等功能障碍,要求应对这样的情况。另外,上述技术中,在1个或多个半导体装置与热固化树脂片的层叠体的背面磨削、切割等加工中,需要采用另外的构件或工序,二次安装的半导体装置的制造工序整体的效率化仍有改善的余地。
本发明的目的在于提供能够制作耐冲击性优良的二次安装半导体装置、并且能够实现二次安装工序的效率化的增强片和使用该增强片的二次安装半导体装置的制造方法。
用于解决问题的手段
因此,本发明人将背面磨削用的背磨带、切割用的切割带等以往的加工用带与规定的热固化树脂片组合而制成突起电极增强用的片,在对突起电极的一次安装基板侧的根基部分(以下,也仅称为“根基部分”)进行增强的同时尝试了包括各加工在内的制造工序的效率化。但是发现,对于这样的片而言,突起电极前端的露出不充分而产生连接不良,或者在加工用带的剥离后产生突起电极的污染。
本发明人进行了深入研究,结果发现,通过采用下述构成,能够达到上述目的,从而完成了本发明。
即,本发明为一种增强片,用于对在第1主面上形成有突起电极的一次安装半导体装置经由该突起电极与布线基板电连接而成的二次安装半导体装置进行增强,
所述增强片依次具备基材层、粘合剂层和热固性树脂层,
所述粘合剂层的断裂强度为0.07MPa以上,且60~100℃下的熔融粘度为4000Pa·s以下。
该增强片中,由于包含具备基材层和粘合剂层的加工用带、以及能够对突起电极的根基部分进行增强的热固性树脂层,因此能够在对突起电极的根基部分进行增强的同时连续地进行背面磨削、切割等加工,能够制作耐冲击性优良的二次安装半导体装置,并且能够容易地实现该制造工序的效率化。另外,由于使粘合剂层的断裂强度为0.07MPa以上,因此即使在一次安装半导体装置从加工用带剥离时也能够抑制粘合剂层的断裂,能够防止突起电极上的胶糊残留。此外,由于使粘合剂层在60~100℃下的熔融粘度为4000Pa·s以下,因此在加热下将增强片与一次安装半导体装置贴合时,突起电极能够容易地进入粘合剂层,能够容易地对从侧面观察突起电极时的热固性树脂层的配置位置进行微调。结果,即使变更突起电极的形状、尺寸,也能够调整其进入量,因此,能够应对各种突起电极的根基部分的增强。另外,断裂强度和熔融粘度的测定方法如实施例所记载。
该增强片中,上述热固性树脂层的厚度优选为上述突起电极的高度的50%以下。由此,突起电极能够穿越过热固性树脂层而达到粘合剂层。结果,在之后的加工用带的剥离时,突起电极由热固性树脂层露出,因此能够与布线基板进行良好的电连接。同时,突起电极由热固性树脂层露出的量容易进行调整,因此能够简便地调整根基部分的增强程度。
该增强片中,上述热固性树脂层与上述粘合剂层之间的剥离力优选为0.02N/20mm以上且0.3N/20mm以下。通过设定为这样的剥离力,能够均衡地兼顾一次安装半导体装置的加工时的保持力和从加工用带剥离时的剥离性。
该增强片优选在上述基材层与上述粘合剂层之间进一步具备包含热塑性树脂的中间层。突起电极的尺寸增大时,为了实现增强片贴合时的突起电极的进入,需要分别增厚热固性树脂层和粘合剂层。但是,在使各层增厚的情况下,难以对突起电极的根基区域进行集中性增强,或者产生粘合剂层的断裂强度的下降。与此相对,通过设置包含热塑性树脂的中间层,突起电极容易进入因贴合时的加热而软化的中间层,因此,能够降低变更热固性树脂层和粘合剂层的厚度的必要性。
本发明中,还包含一种二次安装半导体装置的制造方法,该二次安装半导体装置为在第1主面上形成有突起电极的一次安装半导体装置经由该突起电极与布线基板电连接而成的二次安装半导体装置,所述制造方法包括如下工序:
(A)在所述一次安装半导体装置的第1主面上贴合该增强片的工序,
(B)在利用所述增强片的保持下对所述一次安装半导体装置进行加工的工序,
(C)将所述增强片中的所述热固性树脂层与所述粘合剂层剥离而得到带有所述热固性树脂层的一次安装半导体装置的工序,以及
(D)将带有所述热固性树脂层的一次安装半导体装置经由所述突起电极与布线基板电连接的工序。
根据该制造方法,对一次安装半导体装置赋予用于增强突起电极的根基部分的热固性树脂层,并且在利用增强片的保持下对一次安装半导体装置进行各种加工,因此,能够效率良好地制造耐冲击性优良的二次安装半导体装置。
在该制造方法的工序(A)中,优选以使所述突起电极达到所述粘合剂层的方式贴合所述增强片。由此,能够确保突起电极与布线基板的电连接,能够提高连接可靠性。
该制造方法中,可以使所述粘合剂层为辐射线固化型粘合剂层,在对该辐射线固化型粘合剂层照射辐射线后进行工序(B)。仅通过对辐射线照射型的粘合剂层照射辐射线,就能够降低热固性树脂层与粘合剂层之间的剥离力,能够容易地将热固性树脂层剥离。
附图说明
图1是表示本发明的一个实施方式的增强片的截面示意图。
图2A是表示本发明的一个实施方式的半导体装置的制造工序的一个工序的截面示意图。
图2B是表示本发明的一个实施方式的半导体装置的制造工序的一个工序的截面示意图。
图2C是表示本发明的一个实施方式的半导体装置的制造工序的一个工序的截面示意图。
图2D是表示本发明的一个实施方式的半导体装置的制造工序的一个工序的截面示意图。
图2E是表示本发明的一个实施方式的半导体装置的制造工序的一个工序的截面示意图。
图2F是表示本发明的一个实施方式的半导体装置的制造工序的一个工序的截面示意图。
图3A是表示本发明的另一实施方式的半导体装置的制造工序的一个工序的截面示意图。
图3B是表示本发明的另一实施方式的半导体装置的制造工序的一个工序的截面示意图。
图4是表示本发明的另一实施方式的增强片的截面示意图。
图5是表示本发明的另一实施方式的二次安装半导体装置的截面示意图。
具体实施方式
本发明为一种增强片,用于对在第1主面上形成有突起电极的一次安装半导体装置经由该突起电极与布线基板电连接而成的二次安装半导体装置进行增强,该增强片依次具备基材层、粘合剂层和热固性树脂层,上述粘合剂层的断裂强度为0.07MPa以上,且60~100℃下的熔融粘度为4000Pa·s以下。
另外,本发明为一种二次安装半导体装置的制造方法,该二次安装半导体装置为在第1主面上形成有突起电极的一次安装半导体装置经由该突起电极与布线基板电连接而成的二次安装半导体装置,该制造方法包括如下工序:(A)在上述一次安装半导体装置的第1主面上贴合该增强片的工序、(B)在利用上述增强片的保持下对上述一次安装半导体装置进行加工的工序、(C)将上述增强片中的上述热固性树脂层与上述粘合剂层剥离而得到带有上述热固性树脂层的一次安装半导体装置的工序、以及(D)将带有上述热固性树脂层的一次安装半导体装置经由上述突起电极与布线基板电连接的工序。以下,沿着二次安装半导体装置的制造方法对作为本发明的一个实施方式的第1实施方式进行说明。
<第1实施方式>
在第1实施方式中,对使用将半导体芯片倒装芯片安装于中介层而成的封装体作为一次安装半导体装置、进行背面磨削作为一次安装半导体装置的加工的方式进行说明。
[工序(A)]
在工序(A)中,在一次安装半导体装置的第1主面上贴合规定的增强片。以下,首先对增强片进行说明,然后,对利用该增强片的二次安装半导体装置的制造工序进行说明。
(增强片)
如图1所示,增强片8依次具备基材层1a、粘合剂层1b和热固性树脂层2。在本实施方式中,基材层1a和粘合剂层1b构成背面磨削用带1。另外,如图1所示,热固性树脂层2以足够与一次安装半导体装置10(参照图2A)的树脂密封集合体贴合的尺寸设置即可,可以层叠在背面磨削用带1的整个面。
(背面磨削用带)
背面磨削用带1具备基材层1a和层叠在基材层1a上的粘合剂层1b。另外,热固性树脂层2层叠在粘合剂层1b上。
(基材层)
上述基材层1a构成增强片8的强度基础。可以列举例如:低密度聚乙烯、直链状聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、无规共聚聚丙烯、嵌段共聚聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等聚烯烃,乙烯-乙酸乙烯酯共聚物、离聚物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等聚酯,聚碳酸酯、聚酰亚胺、聚醚醚酮、聚酰亚胺、聚醚酰亚胺、聚酰胺、全芳香族聚酰胺、聚苯硫醚、芳族聚酰胺(纸)、玻璃、玻璃布、氟树脂、聚氯乙烯、聚偏二氯乙烯、纤维素系树脂、有机硅树脂、金属(箔)、纸等。在粘合剂层1b为紫外线固化型的情况下,基材1a优选为对紫外线具有透过性的基材。
另外,作为基材层1a的材料,可以列举上述树脂的交联体等聚合物。上述塑料膜可以在无拉伸的状态下使用,根据需要,也可以使用实施了单轴或双轴的拉伸处理而得到的塑料膜。
为了提高基材层1a的表面与相邻的层的密合性、保持性等,可以实施惯用的表面处理例如铬酸处理、臭氧暴露、火焰暴露、高压电击暴露、电离辐射线处理等化学性或物理性的处理,基于底涂剂(例如后述的粘合物质)的涂布处理。
上述基材层1a可以适当选择使用同种或异种的基材,根据需要,可以使用将多种共混而成的物体。另外,为了对基材层1a赋予抗静电能力,可以在上述的基材1a上设置由金属、合金、它们的氧化物等形成的厚度左右的导电性物质的蒸镀层。也可以通过在基材层中添加抗静电剂来赋予抗静电能力。基材层1a可以为单层或两种以上的多层。
基材层1a的厚度可以适当地确定,通常为5μm以上且200μm以下左右,优选为35μm以上且120μm以下。
另外,基材层1a中可以在不损害本发明效果等的范围内含有各种添加剂(例如着色剂、填充剂、增塑剂、防老化剂、抗氧化剂、表面活性剂、阻燃剂等)。
(粘合剂层)
粘合剂层1b的断裂强度只要为0.07MPa以上即可,但优选为0.08MPa以上,更优选为0.1MPa以上。由于使粘合剂层1b的断裂强度为0.07MPa以上,因此即使在一次安装半导体装置从背面磨削用带剥离时也能够抑制粘合剂层的断裂,能够防止突起电极、热固性树脂层上的胶糊残留。断裂强度的上限值虽然没有特别限定,但从对凸块的凹凸的追随性的观点出发,优选为2.0MPa以下,更优选为1.0MPa以下。另外,在粘合剂层1b为辐射线固化型的粘合剂层(后述)的情况下,固化后的断裂强度满足上述范围即可。
另外,粘合剂层1b的60~100℃下的熔融粘度只要为4000Pa·s以下即可,但优选为3500Pa·s以下,更优选为3000Pa·s以下。由此,在将增强片8与一次安装半导体装置10在加热下贴合时,突起电极能够容易地进入粘合剂层,能够容易地对从侧面观察突起电极时的热固性树脂层的配置位置进行微调。结果,即使变更突起电极的形状、尺寸,也能够调整其进入量,因此,能够应对各种突起电极的根基部分的增强。上述熔融粘度的下限值虽然没有特别限定,但从防止贴合时的粘合剂层的突出、突起电极上的胶糊残留的观点出发,优选为100Pa·s以上,更优选为500Pa·s以上。
粘合剂层1b的形成中使用的粘合剂只要是在背面磨削时借助热固性树脂层牢固地保持一次安装半导体装置、并且在背面磨削后将带热固性树脂层的一次安装半导体装置向切割带移动时能够将带热固性树脂层的一次安装半导体装置控制为可剥离的粘合剂,则没有特别限制。例如可以使用丙烯酸系粘合剂、橡胶系粘合剂等通常的压敏性胶粘剂。作为上述压敏性胶粘剂,从半导体晶片、玻璃等避忌污染的电子部件的利用超纯水或醇等有机溶剂进行清洗的洁净清洗性等观点出发,优选以丙烯酸系聚合物作为基础聚合物的丙烯酸系粘合剂。
作为上述丙烯酸系聚合物,可以列举使用丙烯酸酯作为主要单体成分的聚合物。作为上述丙烯酸酯,可以列举例如使用(甲基)丙烯酸烷基酯(例如甲酯、乙酯、丙酯、异丙酯、丁酯、异丁酯、仲丁酯、叔丁酯、戊酯、异戊酯、己酯、庚酯、辛酯、2-乙基己酯、异辛酯、壬酯、癸酯、异癸酯、十一烷酯、十二烷酯、十三烷酯、十四烷酯、十六烷酯、十八烷酯、二十烷酯等烷基的碳原子数为1~30、特别是碳原子数为4~18的直链状或支链状的烷基酯等)及(甲基)丙烯酸环烷酯(例如环戊酯、环己酯等)中的一种或两种以上作为单体成分的丙烯酸系聚合物等。另外,(甲基)丙烯酸酯是指丙烯酸酯和/或甲基丙烯酸酯,本发明的(甲基)全部为相同的含义。
以凝聚力、耐热性等的改性为目的,上述丙烯酸系聚合物可以根据需要含有与能够同上述(甲基)丙烯酸烷基酯或环烷基酯共聚的其他单体成分对应的单元。作为这样的单体成分,可以列举例如:丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、衣康酸、马来酸、富马酸、巴豆酸等含羧基单体;马来酸酐、衣康酸酐等酸酐单体;(甲基)丙烯酸2-羟基乙酯、(甲基)丙烯酸2-羟基丙酯、(甲基)丙烯酸4-羟基丁酯、(甲基)丙烯酸6-羟基己酯、(甲基)丙烯酸8-羟基辛酯、(甲基)丙烯酸10-羟基癸酯、(甲基)丙烯酸12-羟基月桂酯、(甲基)丙烯酸(4-羟基甲基环己基)甲酯等含羟基单体;苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯酰氧基萘磺酸等含磺酸基单体;2-羟基乙基丙烯酰基磷酸酯等含磷酸基单体;丙烯酰胺、丙烯腈等。这些能够共聚的单体成分可以使用一种或两种以上。这些能够共聚的单体的使用量优选为全部单体成分的40重量%以下。
此外,为了进行交联,上述丙烯酸系聚合物也可以根据需要含有多官能性单体等作为共聚用单体成分。作为这样的多官能性单体,可以列举例如:己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、环氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、氨基甲酸酯(甲基)丙烯酸酯等。这些多官能性单体也可以使用一种或两种以上。从粘合特性等观点出发,多官能性单体的使用量优选为全部单体成分的30重量%以下。
上述丙烯酸系聚合物可以通过将单一单体或两种以上的单体混合物加以聚合而得到。聚合也可以以溶液聚合、乳液聚合、本体聚合、悬浮聚合等中的任意一种方式进行。从防止对洁净的被粘物的污染等观点出发,优选低分子量物质的含量小。从该观点出发,丙烯酸系聚合物的数均分子量优选为30万以上,进一步优选为40万~300万左右。
另外,为了提高作为基础聚合物的丙烯酸系聚合物等的数均分子量,在上述粘合剂中还可以适当地采用外部交联剂。作为外部交联方法的具体手段,可以列举添加多异氰酸酯化合物、环氧化合物、氮丙啶化合物、三聚氰胺系交联剂等所谓的交联剂使其反应的方法。在使用外部交联剂的情况下,其使用量由与应交联的基础聚合物的平衡、以及作为粘合剂的使用用途来适当确定。一般而言,相对于上述基础聚合物100重量份,优选配合5重量份左右以下,进一步优选配合0.1~5重量份。此外,在粘合剂中,根据需要,除了上述成分以外,还可以使用现有公知的各种增粘剂、防老化剂等添加剂。
粘合剂层1b可以利用辐射线固化型粘合剂来形成。辐射线固化型粘合剂通过紫外线等辐射线的照射而使交联度增大,能够容易地降低其粘合力,能够容易地进行带热固性树脂层的一次安装半导体装置的剥离。作为辐射线,可以列举X射线、紫外线、电子束、α射线、β射线、中子射线等。
辐射线固化型粘合剂可以没有特别限制地使用具有碳-碳双键等辐射线固化性的官能团且显示粘合性的粘合剂。作为辐射线固化型粘合剂,可例示出例如在上述丙烯酸系粘合剂、橡胶系粘合剂等通常的压敏性粘合剂中配合有辐射线固化性的单体成分、低聚物成分的添加型的辐射线固化性粘合剂。
作为所配合的辐射线固化性的单体成分,可以列举例如:氨基甲酸酯低聚物、氨基甲酸酯(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、四羟甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇单羟基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。另外,辐射线固化性的低聚物成分可以列举氨基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各种低聚物,其重均分子量为100~30000左右的范围的物质是适当的。辐射线固化性的单体成分、低聚物成分的配合量可以根据上述粘合剂层的种类来适当地确定能够降低粘合剂层的粘合力的量。一般而言,相对于构成粘合剂的丙烯酸系聚合物等基础聚合物100重量份,例如为5~500重量份,优选为40~150重量份左右。
另外,作为辐射线固化型粘合剂,除了上述说明的添加型的辐射线固化性粘合剂以外,可以列举使用了在聚合物侧链、或者主链中或主链末端具有碳-碳双键的聚合物作为基础聚合物的内在型的紫外线固化型粘合剂。内在型的辐射线固化性粘合剂无需含有作为低分子量成分的低聚物成分等或者不含有大量的作为低分子量成分的低聚物成分等,因此低聚物成分等不会随着时间的推移而在粘合剂中移动,能够形成稳定的层结构的粘合剂层,因此优选。
上述具有碳-碳双键的基础聚合物可以没有特别限制地使用具有碳-碳双键且具有粘合性的聚合物。作为这样的基础聚合物,优选以丙烯酸系聚合物作为基本骨架的聚合物。作为丙烯酸系聚合物的基本骨架,可以列举上述例示的丙烯酸系聚合物。
向上述丙烯酸系聚合物中导入碳-碳双键的方法没有特别的限制,可以采用各种方法,将碳-碳双键导入到聚合物侧链中在分子设计上是容易的。例如可以列举如下方法:预先将丙烯酸系聚合物与具有官能团的单体共聚后,使具有能够与该官能团反应的官能团和碳-碳双键的化合物在维持碳-碳双键的辐射线固化性的情况下进行缩聚或加成反应。
作为这些官能团的组合例,可以列举羧酸基与环氧基、羧酸基与氮丙啶基、羟基与异氰酸酯基等。在这些官能团的组合中,从反应追踪的容易性出发,优选羟基与异氰酸酯基的组合。另外,只要是通过这些官能团的组合而生成上述具有碳-碳双键的丙烯酸系聚合物的组合,则官能团可以位于丙烯酸系聚合物和上述化合物中的任意一方均可,在上述优选的组合中,优选丙烯酸系聚合物具有羟基、上述化合物具有异氰酸酯基的情况。这种情况下,作为具有碳-碳双键的异氰酸酯化合物,可以列举例如甲基丙烯酰基异氰酸酯、2-甲基丙烯酰基氧基乙基异氰酸酯、间异丙烯基-α,α-二甲基苄基异氰酸酯等。另外,作为丙烯酸系聚合物,使用将上述例示的含羟基单体、2-羟基乙基乙烯基醚、4-羟基丁基乙烯基醚、二乙二醇单乙烯基醚的醚系化合物等共聚而得到的聚合物。
上述内在型的辐射线固化性粘合剂可以单独使用上述具有碳-碳双键的基础聚合物(特别是丙烯酸系聚合物),但也可以以不会使特性变差的程度配合上述辐射线固化性的单体成分、低聚物成分。辐射线固化性的低聚物成分等通常相对于基础聚合物100重量份为30重量份的范围内,优选为0~10重量份的范围。
在上述辐射线固化型粘合剂中,在利用紫外线等进行固化的情况下,优选含有光聚合引发剂。作为光聚合引发剂,可以列举例如:4-(2-羟基乙氧基)苯基(2-羟基-2-丙基)酮、α-羟基-α,α’-二甲基苯乙酮、2-甲基-2-羟基苯丙酮、1-羟基环己基苯酮等α-酮系化合物;甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲基硫代)-苯基]-2-吗啉代丙烷-1等苯乙酮系化合物;苯偶姻乙基醚、苯偶姻异丙基醚、茴香偶姻甲基醚等苯偶姻醚系化合物;苄基二甲基缩酮等缩酮系化合物;2-萘磺酰氯等芳香族磺酰氯系化合物;1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟等光活性肟系化合物;二苯甲酮、苯甲酰基苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮等二苯酮系化合物;噻吨酮、2-氯噻吨酮、2-甲基噻吨酮、2,4-二甲基噻吨酮、异丙基噻吨酮、2,4-二氯噻吨酮、2,4-二乙基噻吨酮、2,4-二异丙基噻吨酮等噻吨酮系化合物;樟脑醌;卤化酮;酰基氧化膦;酰基磷酸酯等。光聚合引发剂的配合量相对于构成粘合剂的丙烯酸系聚合物等基础聚合物100重量份,例如为0.05~20重量份左右。
另外,在辐射线照射时因氧而阻碍固化的情况下,优选利用某些方法从辐射线固化型的粘合剂层1b的表面阻断氧(空气)。可以列举例如:使用隔片被覆粘合剂层1b的表面的方法;在氮气气氛中进行紫外线等辐射线的照射的方法等。
另外,在粘合剂层1b中可以在不损害本发明效果等的范围内含有各种添加剂(例如着色剂、增稠剂、增量剂、填充剂、增粘剂、增塑剂、防老化剂、抗氧化剂、表面活性剂、交联剂等)。
粘合剂层1b的厚度没有特别限定,从兼顾断裂强度的调整和热固性树脂层2的固定保持等的观点出发,优选为1~100μm左右。优选为2~80μm,进一步优选为5~60μm。
(热固性树脂层)
本实施方式中的热固性树脂层2能够适合用作对经表面二次安装的一次安装半导体装置的突起电极的一次安装基板侧的根基部分进行增强的增强用膜。
作为热固性树脂层的构成材料,可以列举组合使用热塑性树脂与热固性树脂的构成材料。另外,也可以单独使用热塑性树脂或热固性树脂。
作为上述热塑性树脂,可以列举:天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁橡胶、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、6-尼龙、6,6-尼龙等聚酰胺树脂、苯氧基树脂、丙烯酸系树脂、PET或PBT等饱和聚酯树脂、聚酰胺酰亚胺树脂、或氟树脂等。这些热塑性树脂可以单独使用或者组合使用两种以上。这些热塑性树脂中,特别优选离子性杂质少、耐热性高、且能够确保二次安装半导体装置的可靠性的丙烯酸系树脂。
作为上述丙烯酸系树脂,没有特别限定,可以列举以具有碳原子数30以下、特别是碳原子数4~18的直链或支链的烷基的丙烯酸或甲基丙烯酸的酯中的一种或两种以上为成分的聚合物等。作为上述烷基,可以列举例如:甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、环己基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基、或二十烷基等。
另外,作为形成上述聚合物的其他单体,没有特别限定,可以列举例如:丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、马来酸、富马酸或巴豆酸等各种含羧基单体;马来酸酐或衣康酸酐等各种酸酐单体;(甲基)丙烯酸2-羟基乙酯、(甲基)丙烯酸2-羟基丙酯、(甲基)丙烯酸4-羟基丁酯、(甲基)丙烯酸6-羟基己酯、(甲基)丙烯酸8-羟基辛酯、(甲基)丙烯酸10-羟基癸酯、(甲基)丙烯酸12-羟基月桂酯或丙烯酸(4-羟基甲基环己基)甲酯等各种含羟基单体;苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯酰氧基萘磺酸等各种含磺酸基单体;或者2-羟基乙基丙烯酰基磷酸酯等各种含磷酸基单体;丙烯腈等含氰基单体等。
作为上述热固化性树脂,可以列举酚醛树脂、氨基树脂、不饱和聚酯树脂、环氧树脂、聚氨酯树脂、有机硅树脂、或热固化性聚酰亚胺树脂等。这些树脂可以单独使用或组合使用两种以上。特别优选使突起电极腐蚀的离子性杂质等的含量少的环氧树脂。另外,作为环氧树脂的固化剂,优选酚醛树脂。
上述环氧树脂只要为通常用作胶粘剂组合物的环氧树脂,则没有特别限定,可以使用例如双酚A型、双酚F型、双酚S型、溴化双酚A型、氢化双酚A型、双酚AF型、联苯型、萘型、芴型、苯酚线型酚醛型、邻甲酚线型酚醛型、三羟基苯基甲烷型、四羟苯基乙烷型等二官能环氧树脂或多官能环氧树脂、或者乙内酰脲型、三缩水甘油基异氰脲酸酯型或者缩水甘油基胺型等环氧树脂。这些环氧树脂可以单独使用或者组合使用两种以上。在这些环氧树脂中,特别优选线型酚醛型环氧树脂、联苯型环氧树脂、三羟基苯基甲烷型树脂或四苯基乙烷型环氧树脂。这是由于这些环氧树脂富有与作为固化剂的酚醛树脂的反应性且耐热性等优良。
此外,上述酚醛树脂作为上述环氧树脂的固化剂发挥作用,可以列举例如:苯酚线型酚醛型树脂、苯酚芳烷基树脂、甲酚线型酚醛型树脂、叔丁基线型酚醛型树脂、壬基线型酚醛型树脂等线型酚醛型酚醛树脂、甲阶酚醛型酚醛树脂、聚对氧基苯乙烯等聚氧基苯乙烯等。它们可以单独使用或组合使用两种以上。在这些酚醛树脂中,特别优选苯酚线型酚醛型树脂、苯酚芳烷基树脂。这是由于能够提高二次安装半导体装置的连接可靠性。
关于上述环氧树脂与酚醛树脂的配合比例,例如优选以酚醛树脂中的羟基相对于上述环氧树脂成分中的每1当量环氧基为0.5~2.0当量的方式配合。更优选为0.8~1.2当量。即,这是由于若两者的配合比例在上述范围之外,则无法进行充分的固化反应,环氧树脂固化物的特性容易劣化。
另外,本发明中,特别优选使用了环氧树脂、酚醛树脂及丙烯酸系树脂的热固性树脂层。这些树脂的离子性杂质少且耐热性高,因此能够确保二次安装半导体装置的可靠性。关于这种情况下的配合比,相对于丙烯酸系树脂成分100重量份,环氧树脂和酚醛树脂的混合量为10~1000重量份。
作为环氧树脂和酚醛树脂的热固化促进催化剂,没有特别限定,可以从公知的热固化促进催化剂中适当选择使用。热固化促进催化剂可以单独使用或组合使用两种以上。作为热固化促进催化剂,可以使用例如胺系固化促进剂、磷系固化促进剂、咪唑系固化促进剂、硼系固化促进剂、磷-硼系固化促进剂等。
为了除去焊球表面的氧化膜而使半导体元件的安装容易进行,可以在热固性树脂层2中添加焊剂。作为焊剂,没有特别限定,可以使用现有公知的具有焊剂作用的化合物,可以列举例如:二苯酚酸、己二酸、乙酰水杨酸、苯甲酸、二苯乙醇酸、壬二酸、苄基苯甲酸、丙二酸、2,2-双(羟基甲基)丙酸、水杨酸、邻甲氧基苯甲酸、间羟基苯甲酸、琥珀酸、2,6-二甲氧基甲基对甲酚、苯甲酸酰肼、碳酰肼、丙二酸二酰肼、琥珀酸二酰肼、戊二酸二酰肼、水杨酸酰肼、亚氨基二乙酸二酰肼、衣康酸二酰肼、柠檬酸三酰肼、硫代碳酰肼、二苯甲酮腙、4,4’-氧基双苯磺酰肼及己二酸二酰肼等。焊剂的添加量只要是可发挥上述焊剂作用的程度即可,通常相对于热固性树脂层中含有的树脂成分100重量份为0.1~20重量份左右。
在预先使本实施方式的热固性树脂层2进行某种程度的交联的情况下,在制作时,可以添加与聚合物的分子链末端的官能团等反应的多官能性化合物作为交联剂。由此,使高温下的胶粘特性提高,能够实现耐热性的改善。
作为上述交联剂,尤其更优选甲苯二异氰酸酯、二苯基甲烷二异氰酸酯、对苯二异氰酸酯、1,5-萘二异氰酸酯、多元醇与二异氰酸酯的加成物等多异氰酸酯化合物。作为交联剂的添加量,相对于上述聚合物100重量份,通常优选为0.05~7重量份。若交联剂的量多于7重量份,则胶粘力降低,因此不优选。另一方面,若少于0.05重量份,则凝聚力不足,因此不优选。另外,可以根据需要与这样的多异氰酸酯化合物一起含有环氧树脂等其他多官能性化合物。
另外,在热固性树脂层2中可以适当配合无机填充剂。无机填充剂的配合能够赋予导电性、提高热传导性、调节储能弹性模量等。
作为上述无机填充剂,可以列举例如:二氧化硅、粘土、石膏、碳酸钙、硫酸钡、氧化铝、氧化铍、碳化硅、氮化硅等陶瓷类,铝、铜、银、金、镍、铬、铅、锡、锌、钯、焊料等金属、或者合金类,以及包含碳等的各种无机粉末等。这些无机填充剂可以单独使用或组合使用两种以上。其中,可以优选使用二氧化硅,特别优选使用熔融二氧化硅。
无机填充剂的平均粒径虽然没有特别限定,但优选在0.005~10μm的范围内,更优选在0.01~5μm的范围内,进一步优选为0.1~2.0μm。上述无机填充剂的平均粒径小于0.005μm时,容易产生粒子的聚集,有时难以形成热固性树脂层。另一方面,上述平均粒径超过10μm时,无机粒子容易咬入到热固性树脂层与一次安装基板之间,增强水平降低,二次安装半导体装置的耐冲击性、连接可靠性可能下降。另外,本发明中,可以将平均粒径互不相同的无机填充剂彼此组合使用。另外,平均粒径是利用分光光度式的粒度分布计(HORIBA制、装置名:LA-910)求得的值。
上述无机填充剂的配合量相对于有机树脂成分100重量份优选为10~400重量份,更优选为50~250重量份。无机填充剂的配合量小于10重量时,储能弹性模量降低,有时会大大损害突起电极的根基区域的应力弛缓可靠性。另一方面,无机填充剂的配合量超过400重量份时,热固性树脂层2的流动性降低,有时无法充分埋入一次安装基板的凹凸或突起电极的根基的空间内而导致产生空隙、裂缝。
另外,热固性树脂层2中,除上述无机填充剂以外,还可以根据需要适当配合其他添加剂。作为其他添加剂,可以列举例如阻燃剂、硅烷偶联剂或离子捕获剂等。作为上述阻燃剂,可以列举例如三氧化锑、五氧化锑、溴化环氧树脂等。它们可以单独使用或组合使用两种以上。作为上述硅烷偶联剂,可以列举例如β-(3,4-环氧基环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。这些化合物可以单独使用或组合使用两种以上。作为上述离子捕获剂,可以列举例如水滑石类、氢氧化铋等。它们可以单独使用或组合使用两种以上。
本实施方式中,热固化前的热固性树脂层2在60~100℃下的熔融粘度优选为4000Pa·s以下,更优选为500Pa·s以上且4000Pa·s以下。通过使在相当于热压接温度的60~100℃下的熔融粘度在上述范围,能够使突起电极4(参照图2A)容易地进入热固性树脂层2中。
热固性树脂层2的厚度(在多层情况下为总厚)虽然没有特别限定,但若考虑热固性树脂层2的强度、突起电极4的根基部分的增强性,则可以为5μm以上且50μm以下左右。另外,热固性树脂层2的厚度可以考虑突起电极4中要增强的根基部分的范围来适当设定。
增强片8的热固性树脂层2优选由隔片进行保护(未图示)。隔片具有作为在供于实用之前保护热固性树脂层2的保护材料的功能。隔片在向增强片8的热固性树脂层2上粘贴一次安装半导体装置10时被剥离。作为隔片,也可以使用聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、或利用氟系剥离剂、长链烷基丙烯酸酯系剥离剂等剥离剂进行了表面涂覆的塑料膜或纸等。
(增强片的制造方法)
本实施方式的增强片8例如可以通过分别制作背面磨削用带1和热固性树脂层2、最后将这两者贴合来制作。具体而言,可以按照下述的步骤来制作。
首先,基材1a可以利用现有公知的制膜方法来制膜。作为该制膜方法,可以例示出例如压延制膜法、有机溶剂中的浇注法、密闭体系中的吹塑挤出法、T模头挤出法、共挤出法、干式层压法等。
接着,制备粘合剂层形成用的粘合剂组合物。在粘合剂组合物中配合有如粘合剂层一项中说明的树脂、添加物等。在基材1a上涂布所制备的粘合剂组合物,形成涂布膜后,在规定条件下使该涂布膜干燥(根据需要进行加热交联),形成粘合剂层1b。作为涂布方法,没有特别限定,可以列举例如辊涂、丝网涂布、凹版涂布等。另外,作为干燥条件,例如在干燥温度80~150℃、干燥时间0.5~5分钟的范围内进行。另外,可以在隔片上涂布粘合剂组合物而形成涂布膜后,在上述干燥条件下使涂布膜干燥而形成粘合剂层1b。然后,将粘合剂层1b与隔片一起贴合到基材1a上。由此,制作出具备基材1a和粘合剂层1b的背面磨削用带1。
热固性树脂层2例如通过以下方式来制作。首先,制备作为热固性树脂层2的形成材料的胶粘剂组合物。如热固性树脂层一项中说明的那样,在该胶粘剂组合物中配合有热塑性成分、环氧树脂、各种添加剂等。
接着,在基材隔片上以规定厚度涂布所制备的胶粘剂组合物而形成涂布膜后,在规定条件下使该涂布膜干燥,形成热固性树脂层。作为涂布方法,没有特别限定,可以列举例如辊涂、丝网涂布、凹版涂布等。另外,作为干燥条件,例如在干燥温度70~160℃、干燥时间1~5分钟的范围内进行。另外,可以在隔片上涂布胶粘剂组合物而形成涂布膜后,在上述干燥条件下使涂布膜干燥而形成热固性树脂层。然后,将热固性树脂层与隔片一起贴合到基材隔片上。
接着,分别从背面磨削用带1和热固性树脂层2剥离隔片,以使热固性树脂层和粘合剂层成为贴合面的方式将两者贴合。贴合例如可以通过压接来进行。此时,层压温度没有特别限定,例如优选为30~100℃,更优选为40~80℃。另外,线压没有特别限定,例如优选为0.98~196N/cm,更优选为9.8~98N/cm。接着,剥离热固性树脂层上的基材隔片,得到本实施方式的增强片。
(一次安装半导体装置)
如图2A所示,本实施方式的一次安装半导体装置10只要是在第1主面3a上形成有突起电极4的半导体装置即可。例如是指半导体芯片或半导体元件5经由所谓的中介层或基板3与突起电极4(也称为焊球、焊料凸块、导电性球等)连接的形态的半导体装置,通常由密封树脂6密封而构成封装。因此,严密地说,图2A所示的是将多个一次安装半导体装置进行树脂密封而成的密封集合体,但本说明中有时在不区分两者的情况下称为一次安装半导体装置。另外,多芯片组件(MCM)、芯片级封装(CSP)、球栅阵列(BGA)等也包含在一次安装半导体装置中。
具体而言,本实施方式的一次安装半导体装置10主要由可切下的中介层3、在中介层3上配列成XY平面状并由密封树脂6密封的半导体芯片5、与夹着中介层3形成在半导体芯片5上的电极(未图示)电连接的突起电极4形成。另外,半导体芯片5优选在与中介层3之间进行了电极接合,并且将多个半导体芯片5总括地利用密封树脂6进行了密封。
作为中介层3,没有特别限定,可以列举例如陶瓷基板、塑料(环氧、双马来酰亚胺三嗪、聚酰亚胺等)基板、硅基板等。
半导体芯片5与中介层3的电极接合的形态没有特别限定,可以列举利用金线、铜线的金属线接合、凸块接合等。另外,作为突起电极,可以列举金、铜、镍、铝、焊料以及它们的组合等。突起电极的尺寸没有特别限定,例如可以列举直径100~300μm左右。
在增强片8中,热固性树脂层2的厚度优选为突起电极4的高度的50%以下,更优选为48%以下,特别优选为45%以下。由此,突起电极4能够越过热固性树脂层2而达到粘合剂层1b。结果,在之后的背面磨削用带1的剥离时,突起电极4由热固性树脂层2露出(参照图2C),因此能够与布线基板实现良好的电连接。同时,突起电极由热固性树脂层露出的量容易进行调整,因此能够效率良好地进行根基部分的集中性增强。
(贴合)
如图2A所示,在一次安装半导体装置10的形成有突起电极4的第1主面3a上贴合增强片8。从通用性和生产率的观点出发,优选在加热加压条件下进行贴合,优选使用辊压接或加压压接方式等。
从热固性树脂层2的流动性的观点出发,贴合温度优选为构成热固性树脂层2的树脂的软化点以上且固化反应开始温度以下。作为这样的温度,通常从60℃~100℃左右的温度范围选择。由此,能够确保树脂的流动性,能够利用热固性树脂层2将突起电极间充分填埋,并且能够得到充分的密合性。
从半导体装置的强度和热固化树脂片的流动性的观点出发,加压在负荷有优选为0.1~1MPa、更优选为0.3~0.7MPa的压力并按压的同时进行。另外,根据需要,也可以在减压下(1~1000Pa)进行压接。
[工序(B)]
在工序(B)中,在利用增强片8的保持下对一次安装半导体装置10进行背面磨削加工。在磨削工序中,从上述一次安装半导体装置10的与第1主面3a相反的一侧的第2主面(即背面)3b侧进步性磨削(参照图2B)。另外,在本实施方式中仅进行了密封树脂6的磨削,但不限于此,也可以对半导体芯片5的背面进行磨削。在半导体芯片5的背面未进行树脂密封的情况下,直接对半导体芯片5的背面进行磨削。作为一次安装半导体装置10的背面磨削中使用的薄型加工机,没有特别限定,可以例示出例如磨削机(背磨机)、研磨垫等。另外,也可以通过蚀刻等化学方法进行背面磨削。背面磨削进行至一次安装半导体装置达到期望的厚度(例如,10~500μm)为止。
[工序(C)]
磨削工序后,在粘贴有热固性树脂层2的状态下将一次安装半导体装置10从背面磨削用带1剥离(图2C),将带热固性树脂层2的一次安装半导体装置10与切割带11贴合(参照图2D)。此时,按照一次安装半导体装置的第2主面3b侧与切割带11的粘合剂层11b相对的方式贴合。因此,贴合在一次安装半导体装置10的第1主面3a上的热固性树脂层2成为露出的状态(图2D中,朝上)。另外,切割带11具有在基材层11a上层叠有粘合剂层11b的结构。作为基材层11a和粘合剂层11b,可以使用上述背面磨削用带1的基材层1a和粘合剂层1b的项中所示的成分和制法来适当地制作。另外,也可以适当地使用市售的切割带。
将一次安装半导体装置10从背面磨削用带1剥离时,在粘合剂层1b具有辐射线固化性的情况下,通过对粘合剂层1b照射辐射线而使粘合剂层1b固化,能够容易地进行剥离。辐射线的照射量考虑所使用的辐射线的种类、粘合剂层的固化度等来适当设定即可。另外,在粘合剂层1b不具有辐射线固化性的情况下,在背面磨削后,剥离将带热固性树脂层2的一次安装半导体装置10与切割带11贴合,然后将背面磨削用带1剥离。
在本实施方式的增强片8中,热固性树脂层2与粘合剂层1b之间的剥离力优选为0.02N/20mm以上且0.3N/20mm以下,更优选为0.03N/20mm以上且0.2N/20mm以下。通过设定为这样的剥离力,能够均衡地兼顾一次安装半导体装置的背面磨削时的保持力和从背面磨削用带剥离时的剥离性。
[切割工序]
在切割工序中,如图2E所示,对一次安装半导体装置10和热固性树脂层2进行切割,形成单片化的带热固性树脂层2的一次安装半导体装置10。在此得到的一次安装半导体装置10与切割为相同形状的热固性树脂层2形成一体。切割从一次安装半导体装置10的贴合有热固性树脂层2的第1主面3a侧按照常规方法进行。
在本工序中,例如可以采用切入深达切割带11的被称为全切的切断方式等。作为本工序中使用的切割装置,没有特别限定,可以使用现有公知的切割装置。
另外,在接续于切割工序之后进行切割带的扩张的情况下,可以使用现有公知的扩张装置进行该扩张。扩张装置具有可通过切割环将切割带压向下方的圆环状的外环和直径比外环小的支撑切割带的内环。通过该扩张工序,在带热固性树脂层2的一次安装半导体装置10的拾取时们能够防止相邻的一次安装半导体装置10彼此接触而发生破损。
接着,在作为二次安装工序的工序(D)之前,为了回收单片化的一次安装半导体装置10,进行拾取。作为拾取的方法,没有特别限定,可以采用现有公知的各种方法。例如,可以举出利用针从切割带的基材层侧将各个一次安装半导体装置10顶起、并利用拾取装置对被顶起的一次安装半导体装置10进行拾取的方法等。另外,被拾取的一次安装半导体装置10与贴合在第1主面3a的热固性树脂层2成为一体而构成层叠体。
在此,在粘合剂层11b为紫外线固化型的情况下,在对该粘合剂层11b照射紫外线后进行拾取。由此,粘合剂层11b对一次安装半导体装置10的粘合力下降,一次安装半导体装置10的剥离变得容易。结果,能够在不损伤一次安装半导体装置10的情况下进行拾取。紫外线照射时的照射强度、照射时间等条件没有特别限定,根据需要适当设定即可。另外,作为紫外线照射中使用的光源,可以使用例如低压汞灯、低压高输出灯、中压汞灯、无电极汞灯、氙气闪光灯、准分子灯、紫外LED等。
[工序(D)]
在工序(D)中,将带热固性树脂层2的一次安装半导体装置10借助突起电极4与布线基板23电连接(参照图2F)。具体而言,以一次安装半导体装置10的第1主面3a与布线基板23相对的形态,按照常规方法将一次安装半导体装置10固定于布线基板23上。例如,通过在使形成在一次安装半导体装置10上的突起电极4与粘附在布线基板23的连接垫上的接合用导电材料(未图示)接触并进行按压的同时使导电材料熔融,由此能够确保一次安装半导体装置10与布线基板23的电连接。由于在一次安装半导体装置10的第1主面3a侧粘贴有热固性树脂层2,因此,能够在对突起电极4的根基部分进行增强的同时,实现突起电极4与布线基板23的电连接。
作为二次安装工序中的通常的加热条件,为200~300℃,作为加压条件,为0~1000N。另外,可以以多个阶段进行二次安装工序中的热压接处理。例如,可以采用在150℃、50N下处理10秒钟后、在280℃、10~100N下处理10秒钟的程序。通过以多个阶段进行热压接处理,能够效率良好地除去突起电极4与焊垫之间的树脂,能够得到更良好的金属间接合。
作为布线基板23,可以列举刚性布线基板、挠性布线基板、陶瓷布线基板、金属芯布线基板、有机基板等公知的布线基板。
另外,在二次安装工序中,使突起电极4和导电材料中的一者或两者熔融而将两者连接,作为该突起电极4和导电材料的熔融时的温度,通常为260℃左右(例如,250℃~300℃)。本实施方式的增强片中,利用环氧树脂等形成热固性树脂层2,由此可以制成具有能够耐受该安装工序中的高温的耐热性的增强片。
热固性树脂层2可以通过二次安装时的热的赋予而使其固化,也可以在二次安装工序后设置固化工序而使其固化。固化工序中的加热温度只要使热固性树脂层2固化,则没有特别限定,可以为100~300℃左右。
[二次安装半导体装置]
接着,参照附图对使用该增强片得到的二次安装半导体装置进行说明(参照图2F)。在本实施方式的半导体装置20中,一次安装半导体装置10与布线基板23通过形成在一次安装半导体装置10上的突起电极4和设置在布线基板23上的导电材料(未图示)进行电连接。另外,在突起电极4的根基部分配置有热固性树脂层2以使该部分增强,因此能够发挥优良的耐冲击性。
<第2实施方式>
本实施方式中使用的一次安装半导体装置具有目标厚度,因此省略磨削工序。因此,作为第2实施方式中的增强片,使用具备切割带和层叠在该切割带上的热固性树脂层的增强片。
[工序(A)]
在工序(A)中,在一次安装半导体装置10的第1主面3a上贴合规定的增强片。增强片具备切割带21和层叠在该切割带21上的热固性树脂层2(参照图3A)。切割带21具备基材层21a和层叠在基材层21a上的粘合剂层21b。另外,热固性树脂层2层叠在粘合剂层21b上。作为这样的切割带21的基材层21a和粘合剂层21b以及热固性树脂层2,可以使用与第1实施方式中的基材层1a和粘合剂层1b以及热固性树脂层2同样的层。一次安装半导体装置、贴合条件等也可以采用与第1实施方式同样的装置、条件。
[工序(B)]
在工序(B)中,在利用增强片的保持下对一次安装半导体装置10进行切割加工。切割条件等可以适当采用与第1实施方式同样的条件。
之后,与第1实施方式同样,经过单片化的一次安装半导体装置10的拾取后,进行工序(D),由此能够制造二次安装半导体装置。
<第3实施方式>
在第1实施方式中,作为增强片的构成,对于具备基材层、粘合剂层和热固性树脂层的方式进行了说明,在第3实施方式中,对于在基材层与粘合剂层之间进一步具备包含热塑性树脂的中间层的增强片进行说明。除了增强片具备中间层这一点之外,可以经过与第1实施方式同样的工序制造规定的半导体装置。
如图4所示,增强片38依次具备基材层31a、中间层31c、粘合剂层31b和热固性树脂层2。突起电极的尺寸增大时,为了实现增强片贴合时的突起电极的进入,需要分别增厚热固性树脂层和粘合剂层。但是,在使各层增厚的情况下,难以对突起电极的根基区域进行集中性增强,或者产生粘合剂层的断裂强度的下降。与此相对,如本实施方式所示,通过设置包含热塑性树脂的中间层31c,突起电极4能够容易地进入因贴合时的加热而软化的中间层31c,因此,能够排除变更热固性树脂层2和粘合剂层31b的厚度的必要性。
作为中间层31c的形成材料,可以优选在列举工序(A)中的贴合温度下软化的热塑性树脂。作为这样的热塑性树脂,可以列举例如丙烯酸系树脂、聚酯、聚烯烃、聚酰亚胺、聚酰胺酰亚胺、聚硅氧烷、聚醚、聚苯乙烯、聚硫化物、聚碳酸酯等。其中,从耐热性、吸湿性、玻璃化转变温度的观点出发,优选丙烯酸系树脂。
<第4实施方式>
在第1实施方式中,作为一次安装半导体装置,使用了将半导体芯片倒装芯片安装于中介层而成的封装,在第4实施方式中,使用晶片水平芯片级封装(WS-CSP;以下也称为“CSP”)。
图5中示出了在布线基板43上二次安装有CSP的二次安装半导体装置40。CSP具备芯片45、形成在芯片45的单面上的导电柱49和再布线层46、层叠在再布线层46上的密封树脂层47、以及设置在导电柱49的前端的突起电极44,在该CSP的密封树脂层47上进一步层叠有用于增强突起电极的根基部分的热固性树脂层42。二次安装半导体装置40除了使用CSP作为一次安装半导体装置之外,可以经过第1实施方式中说明过的工序来适当制造。
实施例
以下,例示性地对该发明的优选实施例进行详细说明。但是,关于该实施例中记载的材料、配合量等,只要没有特别限定的记载,则该发明的范围并不仅限于此。另外,份表示重量份。
[实施例1]
(热固性树脂层的制作)
将相对于以丙烯酸乙酯-甲基丙烯酸甲酯为主要成分的丙烯酸酯系聚合物(商品名“ParachronW-197CM”、根上工业株式会社制造)100份、环氧树脂1(商品名“Epicoat1004”、JER株式会社制造)23份、环氧树脂2(商品名“Epicoat828”、JER株式会社制造)209份、酚醛树脂(商品名“MirexXLC-4L”、三井化学株式会社制造)215份、球形二氧化硅(商品名“YC100C-MLC”、株式会社ADMATECHS制造)370份、有机酸(商品名“ortho-anisicacid”、东京化成株式会社制造)5.4份、咪唑催化剂(商品名“2PHZ-PW”、四国化成株式会社制造)2.7份溶解在甲乙酮中,制备固体成分浓度为23.6重量%的树脂组合物的溶液。
将该树脂组合物的溶液涂布到作为剥离衬垫(隔片)的、经有机硅脱模处理的厚度为50μm的由聚对苯二甲酸乙二醇酯膜形成的脱模处理膜上之后,在130℃下干燥2分钟,由此制作厚度30μm的热固性树脂层。
(粘合材层的制作)
在具备冷凝管、氮气导入管、温度计和搅拌装置的反应容器中加入丙烯酸-2-乙基己酯(以下也称为“2EHA”)86.4份、丙烯酸-2-羟基乙酯(以下也称为“HEA”)13.6份、过氧化苯甲酰0.2份和甲苯65份,在氮气气流中在61℃下进行6小时聚合处理,得到丙烯酸系聚合物A。
在丙烯酸系聚合物A中加入2-甲基丙烯酰氧乙基异氰酸酯(以下也称为“MOI”)14.6份,在空气气流中在50℃下进行48小时加成反应处理,得到丙烯酸系聚合物A’。
接着,相对于丙烯酸系聚合物A’100份,加入多异氰酸酯化合物(商品名“CORONATEL”、日本聚氨酯株式会社制造)1份和光聚合引发剂(商品名“IRGACURE651”、汽巴精化公司制造)5份,得到粘合剂组合物溶液A。
将粘合剂组合物溶液A涂布到聚对苯二甲酸乙二醇酯(PET)制剥离衬垫的实施了有机硅处理的面上,在120℃下加热干燥2分钟,形成厚度50μm的粘合剂层。接着,将所形成的粘合剂层贴合到未进行有机硅处理的PET基材上。该PET基材的厚度为50μm。
(增强片的制作)
将粘合剂层上的剥离衬垫剥离后,利用手动辊将所得到的粘合剂层与热固性树脂层在40℃下贴合,由此制作增强片。
(在晶片上的贴合)
将热固性树脂层上的剥离衬垫剥离后,使用贴合装置(DR-3000II、日东精机株式会社制造)将增强片的热固性树脂层贴合到晶片的凸块形成面上,制作带增强片的晶片。
<贴合条件>
温度:80℃
速度:3mm/秒
压力:100%(0.5MPa)
<评价晶片>
株式会社WALTS制造
FC150JY_LF
凸块高度:70μm
[实施例2]
除了在粘合剂层的制作中使多异氰酸酯化合物的配合量相对于丙烯酸系聚合物A’100份为0.5份以外,与实施例1同样地制作增强片和带增强片的晶片。
[实施例3]
除了在粘合剂层的制作中使多异氰酸酯化合物的配合量相对于丙烯酸系聚合物A’100份为0.2份以外,与实施例1同样地制作增强片和带增强片的晶片。
[实施例4]
除了在粘合剂层的制作中使多异氰酸酯化合物的配合量相对于丙烯酸系聚合物A’100份为0.1份以外,与实施例1同样地制作增强片和带增强片的晶片。
[比较例1]
除了在粘合剂层的制作中使多异氰酸酯化合物的配合量相对于丙烯酸系聚合物A’100份为2份以外,与实施例1同样地制作增强片和带增强片的晶片。
[比较例2]
除了在粘合剂层的制作中不配合多异氰酸酯化合物以外,与实施例1同样地制作增强片和带增强片的晶片。
[评价]
(粘合剂层的断裂强度的测定)
对通过上述程序制作的粘合剂层照射300mJ/cm2的UV光,使粘合剂层固化,将固化后的粘合剂层切割为宽度30mm×长度10mm,制成试验片。将试验片设置于拉伸试验机“autographASG-50D型”(岛津制作所制造),在拉伸速度300mm/分钟、夹盘间距10mm、室温(23℃)的条件下进行拉伸试验,求出应力-应变曲线。求出此时的试验片断裂时的应力,作为断裂强度。将结果示于表1。
(粘合剂层的熔融粘度的测定)
对通过上述程序制作的粘合剂层(UV固化前)的熔融粘度进行测定。熔融粘度为使用流变仪(HAAKE公司制造、RS-1)通过平行板法测定的值。更详细而言,在间隙100μm、旋转板直径20mm、旋转速度10s-1、升温速度10℃/分钟的条件下在从50℃至120℃的范围内测定熔融粘度。结果,在实施例1~4和比较例2中,在全部上述温度范围内均为4000Pa·s以下。另一方面,在比较例1中,在上述温度范围内存在超过4000Pa·s的阶段。表1中示出了上述温度范围中的80℃下的熔融粘度的测定结果。
(增强片的树脂成分向凸块的移动的评价)
从通过上述程序制作的带增强片的晶片的PET基材侧照射300mJ/cm2的UV光,使粘合剂层固化。然后,将粘合剂层与基材一起从热固性树脂层剥离。使用光学显微镜(500倍)观察此时的凸块,由此观察有无增强片的某些树脂成分向凸块上的移动(树脂残渣)。另外,使用显微FT-IR,按照下述的程序进行移动到凸块上的树脂残渣的鉴定。将使用光学显微镜观察到的凸块上的树脂残渣在金刚石皿上展开,使用显微FT-IR(ThermoFisherScientific、“Nicolet8700”)以透射法、分辨率4.0cm-1、累计次数512次测定红外光谱。在1100cm-1处观察到来源于硅填料的峰的情况下,鉴定为树脂残渣来自于热固性树脂层,在未观察到上述峰的情况下,鉴定为来自于粘合剂层。结果示于表1。
表1
由表1可知,在实施例中,热固性树脂层和粘合剂层均未移动至凸块,能够顺利地进行凸块从热固性树脂层的露出和粘合剂层的剥离。另一方面,在比较例1中,热固性树脂层移动至凸块。认为其理由在于,粘合剂层的断裂强度和熔融粘度过高,因此,粘合剂层无法追随凸块形状,从而妨碍了凸块从热固性树脂层的露出。在比较例2中,粘合剂层移动至凸块。认为其理由在于,粘合剂层的断裂强度过低,无法对抗从热固性树脂层剥离时的应力。
符号的说明
1背面磨削用带
1a、21a、31a基材层
1b、21b、31b粘合剂层
2热固性树脂层
3中介层
3a中介层的第1主面
3b中介层的与第1主面相反一侧的第2主面
4、44突起电极
5、45半导体芯片(半导体元件)
6、46密封树脂
8、38增强片
11、21切割带
10一次安装半导体装置
20、40二次安装半导体装置
31c中间层
Claims (7)
1.一种增强片,用于增强二次安装半导体装置,所述二次安装半导体装置中,在第1主面上形成有突起电极的一次安装半导体装置经由该突起电极与布线基板电连接,
所述增强片依次具备基材层、粘合剂层和热固性树脂层,
所述粘合剂层的断裂强度为0.07MPa以上,且60~100℃下的熔融粘度为4000Pa·s以下。
2.如权利要求1所述的增强片,其中,
所述热固性树脂层的厚度为所述突起电极的高度的50%以下。
3.如权利要求1或2所述的增强片,其中,
所述热固性树脂层与所述粘合剂层之间的剥离力为0.02N/20mm以上且0.3N/20mm以下。
4.如权利要求1~3中任一项所述的增强片,其中,
在所述基材层与所述粘合剂层之间进一步具备包含热塑性树脂的中间层。
5.一种二次安装半导体装置的制造方法,其是在第1主面上形成有突起电极的一次安装半导体装置经由该突起电极与布线基板电连接而成的二次安装半导体装置的制造方法,包括如下工序:
(A)在所述一次安装半导体装置的第1主面上贴合权利要求1~4中任一项所述的增强片的工序,
(B)在利用所述增强片的保持下对所述一次安装半导体装置进行加工的工序,
(C)将所述增强片中的所述热固性树脂层与所述粘合剂层剥离而得到带有所述热固性树脂层的一次安装半导体装置的工序,以及
(D)将所述带有热固性树脂层的一次安装半导体装置经由所述突起电极与布线基板电连接的工序。
6.如权利要求5所述的二次安装半导体装置的制造方法,其中,
在工序(A)中,以使所述突起电极达到所述粘合剂层的方式贴合所述增强片。
7.如权利要求5或6所述的二次安装半导体装置的制造方法,其中,
所述粘合剂层为辐射线固化型粘合剂层,
在对该辐射线固化型粘合剂层照射辐射线后进行工序(C)。
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CN110914957A (zh) * | 2017-07-20 | 2020-03-24 | 三井化学东赛璐株式会社 | 电子装置的制造方法 |
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JP6595296B2 (ja) * | 2015-10-19 | 2019-10-23 | デクセリアルズ株式会社 | 保護テープ、及び半導体装置の製造方法 |
JP2017084973A (ja) * | 2015-10-28 | 2017-05-18 | 日東電工株式会社 | 一次実装半導体装置の製造方法 |
JP6721963B2 (ja) * | 2015-10-28 | 2020-07-15 | 日東電工株式会社 | バンプ根元補強用シート |
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JP7032477B2 (ja) * | 2020-06-19 | 2022-03-08 | 日東電工株式会社 | バンプ根元補強用シート |
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