CN105048776B - Gate driving circuit - Google Patents
Gate driving circuit Download PDFInfo
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- CN105048776B CN105048776B CN201510053458.8A CN201510053458A CN105048776B CN 105048776 B CN105048776 B CN 105048776B CN 201510053458 A CN201510053458 A CN 201510053458A CN 105048776 B CN105048776 B CN 105048776B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
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- Power Conversion In General (AREA)
- Electronic Switches (AREA)
- Inverter Devices (AREA)
Abstract
The present invention provides noise when reducing power semiconductor device conducting and can realize the gate driving circuit of the reduction of switching loss.Variable resistance part (113n is set on the charging current path from control circuit (140) to power semiconductor device (120), 115n, 116n) and/or variable condenser portion (118n, 119n, 1110b), when carrying out control to switch element (112n) so as to carry out on/off control to charging current by switch element (111n), resistive component and/or capacitive component control obtained from the load condition of expression motor (200) or the characteristic value of driving condition detected using decision circuit (117n) and based on sensor is connected in parallel variable resistance part and variable condenser portion, to reduce noise, so that the switching speed variation of power semiconductor device.
Description
Technical field
The present invention relates to for exchange driving vehicle traction with etc. motor inverter in, to power with half
The gate driving circuit that conductor element is driven.
Background technology
In possessing motor and driving the vehicle fitting of inverter of the motor, become the feelings of high load in motor
Under condition, noise and switching loss (power consumption) increase when power semiconductor device turns on.
In the past, in order in motor to reduce switching loss in the case of high load, using gate driving circuit to taking
When being loaded in the power semiconductor device of inverter and being driven, pay attention to the control of efficiency, so as to reduce the raster data model
The loss of circuit.
As the driving method for the gate driving circuit being driven to power semiconductor device, existing makes switching speed
For the prior art of variable gate driving circuit, wherein, based on inverter input voltage, inverter output current or switch
Temperature of element etc. changes the switch speed of the on off state for the switch element for forming the inverter being connected with on-vehicle host,
So as to obtain the balance between noise and loss (for example, referring to patent document 1).
Prior art literature
Patent document
Patent document 1：No. 4844653 publications of Japanese Patent No.
The content of the invention
The technical problems to be solved by the invention
There are trade-off relationship between the noise of vehicle fitting and loss, in the grid drive to driving power semiconductor element
In the control that dynamic circuit carries out, if as it is previous like that only paid attention to efficiency (loss), need to add to tackle power with partly leading
Circuit, mechanism of noise during body element conductive etc., cause cost to improve.In addition, it is contemplated that making an uproar for vehicle fitting in future
The regulation of sound can be also reinforced, it is necessary to obtain the optimum balance between more low noise and high efficiency.
Inverter recorded in above patent document 1 uses constant-pressure type gate driving circuit, constant-pressure type raster data model electricity
Road applies constant pressure to be driven to the gate terminal of power semiconductor device, and accordingly, there exist following problems：During conducting, electricity
Noise when stream rises is larger, insufficient for reducing effect is lost obtained from variable as making switching speed.
The present invention completes to solve the above-mentioned problems, and its purpose is to provide a kind of gate driving circuits, can try hard to
Noise during power semiconductor device conducting is reduced, and reduces the switching loss because of caused by high-speed switch, so as to will be low
The whitening balance control between high efficiency is optimal.
Technical scheme applied to solve the technical problem
Driving circuit according to the present invention for achieving the above object is mounted in for electronic to exchange to drive
The gate driving circuit of the voltage driven type power semiconductor device of the inverter of machine, including：Current-variable portion, the electric current
Charging current when variable portion makes to charge to the grid of power semiconductor device with fixed current by control circuit occurs
Variation；And decision circuit, the load condition or driving condition of the motor which detects according to sensor,
The current-variable portion is controlled, so as to change the switching speed of the power semiconductor device, to reduce noise.
Invention effect
Gate driving circuit according to the present invention according to the load condition of motor, driving condition, makes with fixed current pair
Current value when grid capacitance when power semiconductor device turns on is charged changes.
As a result, can to because collector current or charging current start to flow this variation caused by high-frequency noise etc.
Grade is inhibited, accordingly, it is capable to be to be most suitable for load state, the driving condition of power semiconductor device by switching speed control,
That is the load condition of motor, driving condition, also, the switching loss of power semiconductor device can be reduced.
Description of the drawings
Fig. 1 is to represent to apply an exemplary frame of the power conversion system of gate driving circuit according to the present invention
Figure.
Fig. 2 is the figure of the structure (being equivalent to 1 arm) for the gate driving circuit for representing embodiments of the present invention 1~3.
Fig. 3 is the switch speed for the power semiconductor device for representing embodiments of the present invention 1 (motor speed variation)
The sequence diagram of the variable process of degree.
Fig. 4 is the switch speed for the power semiconductor device for representing embodiments of the present invention 2 (motor torque variation)
The sequence diagram of the variable process of degree.
Fig. 5 is the switch speed for the power semiconductor device for representing embodiments of the present invention 3 (motor output variation)
The sequence diagram of the variable process of degree.
Fig. 6 is the figure of the structure (being equivalent to 1 arm) for the gate driving circuit for representing embodiments of the present invention 4~10.
Fig. 7 is to represent that the power semiconductor device of embodiments of the present invention 5 (inverter output current variation) is opened
Close the sequence diagram of the variable process of speed.
Fig. 8 is to represent that the power semiconductor device of embodiments of the present invention 6 (inverter output voltage variation) is opened
Close the sequence diagram of the variable process of speed.
Fig. 9 is to represent that the power semiconductor device of embodiments of the present invention 7 (input current of inverter variation) is opened
Close the sequence diagram of the variable process of speed.
Figure 10 is to represent that the power semiconductor device of embodiments of the present invention 8 (inverter input voltage variation) is opened
Close the sequence diagram of the variable process of speed.
Figure 11 is the power semiconductor for representing embodiments of the present invention 9 (temperature variation of power semiconductor device)
The sequence diagram of the variable process of the switching speed of element.
Figure 12 is the power semiconductor device for representing embodiments of the present invention 10 (driving condition of motor changes)
Switching speed variable process sequence diagram.
Figure 13 is the figure of the structure (being equivalent to 1 arm) for the gate driving circuit for representing embodiments of the present invention 11.
Specific embodiment
In the following, referring to the drawings, each embodiment of gate driving circuit according to the present invention is illustrated.
Embodiment 1.
The gate driving circuit of the present invention is used as a part for power conversion system for example shown in Fig. 1.Letter is carried out to Fig. 1
Unitary declaration.200 be the motor (for example, permanent-magnetic AC synchronous motor) of power operation/regeneration, 300 be can charge and discharge
Electrical storage device (for example, lithium ion battery, Ni-MH battery, double layer capacitor), 100 be will be supplied when power is run it is electronic
The power supply of machine is converted into exchanging from direct current, and the inverter that the regenerated electric power of motor is converted into during regeneration direct current from exchange fills
It puts, 120 be the power semiconductor device (for example, IGBT, MOSFET) of voltage driven type, and 130 are and power semiconductor member
The diode of part inverse parallel connection, 110 be for the gate driving circuit of driving power semiconductor element, and 140 be to power
The control circuit of switch control is carried out with semiconductor element, 150 be for removing the smoothing capacity device of the ripple of busbar.
In the following, based on attached drawing, the gate driving circuit involved by embodiments of the present invention 1 is illustrated.Though in addition,
Right DC-to-AC converter 100 has altogether 6 arms, but their elemental motion is identical, therefore, takes Fig. 1 institutes for convenience of description
1 arm in the DC-to-AC converter 100 of record illustrates.In addition, the power conversion system of Fig. 1 is in following each embodiment party
It is general in formula.
Fig. 2 shows the structure (being equivalent to 1 arm) of the gate driving circuit 110 of embodiments of the present invention 1.Grid drives
Dynamic circuit 110 includes：It is connected in series between the grid of control circuit 140 and power semiconductor device 120 and emitter connects
It is connected to the PNP bipolar transistors 112 of power semiconductor device control circuit 140；It is connected to the PNP bipolar transistors
Resistance 113 between 112 emitter and base stage；Emitter is connected to the base stage and electricity of the PNP bipolar transistors 112
The tie point of resistance 113, base stage are connected to the collector of the PNP bipolar transistors 112 and collector is connected to power with partly leading
The PNP bipolar transistors 111 of the grid of volume elements part 120；The resistance 115 being connected in parallel with resistance 113；In resistance 113 and electricity
The switch 116 for being attached/disconnecting between resistance 115；And to switching the 116 on/off decision circuits turned on/off
117.Currently, switch 116 is disconnection.
In action in the case where power semiconductor device 120 turns on, if from control circuit 140 to raster data model
Circuit 110 inputs Continuity signal, then base current flows through the 2nd PNP bipolar transistors 111 via resistance 113,114.As a result,
2nd PNP bipolar transistors 111 become conducting state, flow into the grid electricity of the gate terminal of power semiconductor device 120
Ig is flowed by 113 and the 2nd PNP bipolar transistors 111 of resistance to flow.
The base-emitter that if grid current ig increases, the pressure drop of resistance 113 is more than the first PNP bipolar transistors 112
Between threshold voltage, then the first PNP bipolar transistors 112 turn on.Base stage-hair of 2nd PNP bipolar transistors 111 as a result,
Short-circuit between emitter-base bandgap grading, therefore, the 2nd PNP bipolar transistors 111 disconnect.
Repeat such action, so as to be constrained to the grid current ig for flowing through gate driving circuit 110 with by the
Value obtained from the emitter-to-base voltage of one PNP bipolar transistors 112 divided by resistance 113 is the upper limit.
It if, can be to previous constant-pressure type gate driving circuit in this way, using gate driving circuit according to the present invention
It is occurring in (not shown), to power semiconductor device 120 apply constant pressure when grid current ig situation about steeply rising carry out
Inhibit, therefore noise can be reduced.In addition, carrying out driving power semiconductor element 120 with constant current, therefore, driven with previous constant pressure
Dynamic situation is compared, and can further improve switching speed, so can also reduce the switching loss of power semiconductor device 120.
Then, the hand-off process of the switching speed of the power semiconductor device 120 of embodiments of the present invention 1 is carried out
Explanation.
In present embodiment 1, based on the rotating speed for the motor 200 for being connected to DC-to-AC converter 100, to being connected to control
The resistance value of resistance 113 between the emitter of 140 and the 2nd PNP bipolar transistors 111 of circuit switches over, so as to cut
Change the switching speed of power semiconductor device 120.
Herein, it is however generally that, if the rotating speed rise of motor, noise, surge voltage become higher, therefore, in order to inhibit to make an uproar
Sound, surge voltage are, it is necessary to consider that motor determines power semiconductor device 120 with situation that maximum (top) speed is acted
Switching speed.Therefore, in the case where motor is acted with the slow-speed of revolution, holding for power semiconductor device 120 can excessively be reduced
Close speed.
Electricity is detected by the position sensors such as such as rotary transformer (not shown), angular sensor (not shown)
The rotating speed of motivation 200.Based on these detection signals (not shown), switch 116 is carried out using decision circuit 117 is turned on/off
On/off is judged, is switched on or switched off switch 116.
In the case where switch 116 is connected, resistance 113 becomes with resistance 115 to be connected in parallel, and therefore, is disconnected with switch 116
Situation compare, combined resistance reduce.Therefore, the limits value increase of the grid current ig of gate driving circuit 110 is flowed through, to work(
Rate is become faster with the charging rate that the grid capacitance of semiconductor element 120 charges, switching speed increase.
The exemplified hand-off process of the switching speed of present embodiment of Fig. 3.Fig. 3 a show the change of motor speed
Change, Fig. 3 b show that the variation for the ON/OFF state for switching 116, Fig. 3 c show the variation of switching speed.As shown in the figure,
In the case where motor speed is higher, switch 116 is disconnected to reduce switching speed, in the relatively low situation of motor speed
Under, switch 116 is connected to improve switching speed.
Present embodiment 1 from the description above can reduce noise when power semiconductor device 120 turns on, reduce
The switching loss of power semiconductor device 120 during motor low speed rotation.
Embodiment 2.
Fig. 2 is also represented by the gate driving circuit of embodiments of the present invention 2.Namely based on being connected to DC-to-AC converter 100
The torque of motor 200, to the resistance being connected between the emitter of 140 and the 2nd PNP bipolar transistors 111 of control circuit
113 resistance value switches over, so as to the power switched switching speed of semiconductor element 120.
Wherein, it is however generally that, if the torque rise of motor, noise, surge voltage become higher, therefore, in order to inhibit to make an uproar
Sound, surge voltage are, it is necessary to consider that motor determines power semiconductor device 120 with situation that torque capacity is acted
Switching speed.Therefore, in the case where motor is acted with low torque, then power semiconductor device can excessively be reduced
120 switching speed.
The torque of motor 200 is detected by such as torque sensor (not shown).Wherein, motor torque can be
The target torque received from the higher controller (not shown) of DC-to-AC converter 100.Signal (not shown) is detected based on these,
The on/off of switch 116 is judged by on/off decision circuit 117, is switched on or switched off switch 116.
In the case where switch 116 is connected, resistance 113 becomes with resistance 115 to be connected in parallel, and therefore, is disconnected with switch 116
Situation compare, combined resistance reduce.Therefore, the limits value increase of the grid current ig of gate driving circuit 110 is flowed through, to work(
Rate is become faster with the charging rate that the grid capacitance of semiconductor element 120 charges, switching speed increase.
The exemplified hand-off process of the switching speed of present embodiment 2 of Fig. 4.Fig. 4 a show the change of motor torque
Change, Fig. 4 b show that the variation for the ON/OFF state for switching 116, Fig. 4 c show the variation of switching speed.
As shown in the figure, in the case where motor torque is higher, switch 116 is disconnected to reduce switching speed, electronic
In the case that machine torque is relatively low, switch 116 is connected to improve switching speed.
Present embodiment 2 from the description above can reduce noise when power semiconductor device 120 turns on, and energy
Reduce the switching loss of power semiconductor device 120 when motor is low torque.
Embodiment 3.
Fig. 2 is also represented by the gate driving circuit of embodiments of the present invention 3.Based on the electricity for being connected to DC-to-AC converter 100
The output of motivation 200, to being connected to the resistance between the emitter of 140 and the 2nd PNP bipolar transistors 111 of control circuit
Resistance value switches over, so as to the power switched switching speed of semiconductor element 120.
Wherein, it is however generally that, if the output rise of motor, noise, surge voltage become higher, therefore, in order to inhibit to make an uproar
Sound, surge voltage are, it is necessary to consider that motor determines power semiconductor device 120 with situation that maximum output is acted
Switching speed.Therefore, in the case that motor is acted with low output, then power semiconductor device can excessively be reduced
120 switching speed.
For example, by the fortune carried out according to the detected value of position sensor (not shown) and torque sensor (not shown)
Calculate, according to measure DC-to-AC converter 100 input current current sensor (not shown) and measure DC-to-AC converter 100 it is defeated
Enter the computing that the detected value of the voltage sensor (not shown) of voltage is carried out, to detect the output of motor 200.
Wherein, motor output can be the target received from the higher controller (not shown) of DC-to-AC converter 100
Output valve, presumption output valve etc..Based on these detection signals (not shown), by on/off decision circuit 117 to switch 116
On/off judgement is carried out, so that switch 116 is switched on or switched off.
In the case where switch 116 is connected, resistance 113 becomes with resistance 115 to be connected in parallel, and therefore, is disconnected with switch 116
Situation compare, combined resistance reduce.Therefore, the limits value increase of the grid current ig of gate driving circuit 110 is flowed through, to work(
Rate is become faster with the charging rate that the grid capacitance of semiconductor element 120 charges, switching speed increase.
The exemplified hand-off process of the switching speed of present embodiment of Fig. 5.Fig. 5 a show the change of motor output
Change, the variation of ON/OFF state Figure 5b shows that switch 116, Fig. 5 c show the variation of switching speed.
As shown in the figure, in the case where motor output is higher, switch 116 is disconnected to reduce switching speed, electronic
In the case that machine output is relatively low, switch 116 is connected to improve switching speed.
Present embodiment 3 from the description above can reduce noise when power semiconductor device 120 turns on, and energy
The switching loss of power semiconductor device 120 when reduction motor output is relatively low.
Embodiment 4.
Based on attached drawing, the embodiment 4 of gate driving circuit according to the present invention is illustrated.Fig. 6 shows this
The structure (being equivalent to 1 arm) of the gate driving circuit of the embodiment 4 of invention.
The gate driving circuit 110 includes：It is connected in series in the grid of control circuit 140 and power semiconductor device 120
Between pole and emitter is connected to the PNP bipolar transistors 112 of power semiconductor device control circuit 140；It is connected to institute
State the resistance 113 between the emitter of PNP bipolar transistors 112 and base stage；It is connected in PNP bipolar transistors in parallel
Capacitor 119 and capacitor 1110 between 112 emitter and collector；Emitter is connected to PNP bipolar transistors 112
Base stage and resistance 113 tie point, base stage is connected to the collector of PNP bipolar transistors 112 and collector is connected to work(
The PNP bipolar transistors 111 of the rate grid of semiconductor element 120；Capacitor 119 and capacitor 1110 are attached/
The switch 118 of cut-out；And to switching the 118 on/off decision circuits 117 turned on/off.
In the case where power semiconductor device 120 turns on, if defeated from control circuit 140 to gate driving circuit 110
Enter Continuity signal, then base current flows through the 2nd PNP bipolar transistors 111 via resistance 113,114.The 2nd PNP is double as a result,
Bipolar transistor 111 becomes conducting state, and the grid current ig for flowing into the gate terminal of power semiconductor device 120 passes through electricity
Resistance 113 and the 2nd PNP bipolar transistors 111 and flow.At this point, the corresponding amount of pressure drop with resistance 113 is charged to electricity
Container 1110, therefore the rising of energy suppressor grid electric current ig.
Moreover, if grid current ig increases, the pressure drop of resistance 113 be more than the first PNP bipolar transistors 112 base stage-
Emit voltage across poles, then the first PNP bipolar transistors 112 turn on.As a result, the base stage of the 2nd PNP bipolar transistors 111-
Short-circuit between emitter, the 2nd PNP bipolar transistors 111 disconnect.Repeat above-mentioned action, so as to which raster data model will be flowed through
The grid current ig of circuit 110 is constrained to by the emitter-to-base voltage divided by electricity of the first PNP bipolar transistors 112
Value obtained from resistance 113 is the upper limit.
It as mentioned above, can be to previous constant-pressure type raster data model electricity if using gate driving circuit of the invention
It is occurring in road (not shown), to power semiconductor device 120 apply constant pressure when grid current ig situation about steeply rising into
Row inhibits, therefore can reduce noise.In addition, driving power semiconductor element 120 is come with constant current, therefore, with previous constant pressure
The situation of driving is compared, and can further improve switching speed, accordingly, it is capable to reduce the switching loss of power semiconductor device 120.
Then, the hand-off process of the switching speed of the power semiconductor device 120 of embodiments of the present invention 4 is carried out
Explanation.
In present embodiment 4, the output current based on the motor 200 that output is extremely connected with DC-to-AC converter 100,
The electrostatic capacitance for being connected to the capacitor between the base stage of 140 and the 2nd PNP bipolar transistors 111 of control circuit is cut
It changes, so as to the power switched switching speed of semiconductor element 120.
Wherein, it is however generally that, if inverter output current raises, noise, surge voltage become higher, therefore, in order to inhibit
Noise, surge voltage are, it is necessary to consider the maximum output current of inverter to determine the switch of power semiconductor device 120 speed
Degree.Therefore, in the case where inverter output current is relatively low, then the switch speed of power semiconductor device 120 can excessively be reduced
Degree.
Inverter output current is detected by such as current sensor (not shown).(do not schemed based on the detection signal
Show), on/off judgement is carried out to switch 118 using decision circuit 117 is turned on/off, so that switch 118 connects on-off
It opens.
In the case where switch 118 is connected, capacitor 119 becomes with capacitor 1110 to be connected in parallel, therefore, with switch
118 situations about disconnecting are compared, and synthesis electrostatic capacitance increases.Therefore, the rising of the grid current ig of gate driving circuit 110 is flowed through
Slack-off, the charging rate to charge to the grid capacitance of power semiconductor device 120 is slack-off, and switching speed reduces.
The exemplified hand-off process of the switching speed of present embodiment of Fig. 7.Fig. 7 a show inverter output current
Variation, Fig. 7 b show that the variation of ON/OFF state of switch 118, Fig. 7 c show the variation of switching speed.
As shown in the figure, in the case where inverter output current is higher, switch 118 is connected to reduce switching speed,
In the case that inverter output current is relatively low, switch 118 is disconnected to improve switching speed.
Present embodiment 4 from the description above can reduce noise when power semiconductor device 120 turns on, and energy
The switching loss of power semiconductor device 120 when reduction inverter output current is relatively low.
Embodiment 5.
Fig. 6 is also represented by the gate driving circuit of embodiments of the present invention 5.Based on output to 100 phase of DC-to-AC converter
The inverter output voltage of the motor 200 of connection, to being connected to 140 and the 2nd PNP bipolar transistors 111 of control circuit
The electrostatic capacitance of capacitor between base stage switches over, so as to the power switched switching speed of semiconductor element 120.
Wherein, it is however generally that, if inverter output voltage raises, noise, surge voltage become higher, therefore, in order to inhibit
Noise, surge voltage are, it is necessary to consider the maximum output voltage of inverter to determine the switch of power semiconductor device 120 speed
Degree.Therefore, in the case where inverter output voltage is relatively low, then the switch speed of power semiconductor device 120 can excessively be reduced
Degree.
Inverter output voltage is detected using such as voltage sensor (not shown).(do not schemed based on these detection signals
Show), on/off judgement is carried out to switch 118 using decision circuit 117 is turned on/off, is switched on or switched off switch 118.
In the case that switch 118 is connected, capacitor 119 becomes with capacitor 1110 to be connected in parallel, therefore, the feelings disconnected with switch 118
Condition is compared, and synthesis electrostatic capacitance increases.Therefore, it is slack-off to flow through the rising of the grid current ig of gate driving circuit 110, to power
The charging rate to be charged with the grid capacitance of semiconductor element 120 is slack-off, and switching speed reduces.
The exemplified hand-off process of the switching speed of present embodiment of Fig. 8.Fig. 8 a show inverter output voltage
Variation, Fig. 8 b show that the variation of ON/OFF state of switch 118, Fig. 8 c show the variation of switching speed.
As shown in the figure, in the case where inverter output voltage is higher, switch 118 is connected to reduce switching speed,
In the case that inverter output voltage is relatively low, switch 118 is disconnected to improve switching speed.
Present embodiment 5 from the description above can reduce noise when power semiconductor device 120 turns on, and energy
The switching loss of power semiconductor device 120 when reduction inverter output voltage is relatively low.
Embodiment 6.
Fig. 6 is also represented by the gate driving circuit of embodiments of the present invention 6.Namely based on from 100 phase of DC-to-AC converter
The input current of inverter of the battery 300 of connection, to being connected to the base of 140 and the 2nd PNP bipolar transistors 111 of control circuit
The electrostatic capacitance of capacitor between pole switches over, so as to the power switched switching speed of semiconductor element 120.
Wherein, it is however generally that, if input current of inverter raises, noise, surge voltage become higher, therefore, in order to inhibit
Noise, surge voltage are, it is necessary to consider the maximum input current of inverter to determine the switch of power semiconductor device 120 speed
Degree.Therefore, in the case where input current of inverter is relatively low, then the switch speed of power semiconductor device 120 can excessively be reduced
Degree.
Input current of inverter is detected using such as current sensor (not shown).(do not schemed based on these detection signals
Show), on/off judgement is carried out to switch 118 using decision circuit 117 is turned on/off, is switched on or switched off switch 118.
In the case where switch 118 is connected, capacitor 119 becomes with capacitor 1110 to be connected in parallel, therefore, with switch
118 situations about disconnecting are compared, and synthesis electrostatic capacitance increases.Therefore, the rising of the grid current ig of gate driving circuit 110 is flowed through
Slack-off, the charging rate to charge to the grid capacitance of power semiconductor device 120 is slack-off, and switching speed reduces.
The exemplified hand-off process of the switching speed of present embodiment 6 of Fig. 9.Fig. 9 a show input current of inverter
Variation, Fig. 9 b show that the variation of ON/OFF state of switch 118, Fig. 9 c show the variation of switching speed.As schemed
Show, in the case where input current of inverter is higher, switch 118 is connected to reduce switching speed, in input current of inverter
In the case of relatively low, switch 118 is disconnected to improve switching speed.
Present embodiment 6 from the description above can reduce noise when power semiconductor device 120 turns on, and energy
The switching loss of power semiconductor device 120 when reduction input current of inverter is relatively low.
Embodiment 7.
Fig. 6 is also represented by the gate driving circuit of embodiments of the present invention 7.Namely based on from 100 phase of DC-to-AC converter
The inverter input voltage of the battery 300 of connection, to being connected to the base of 140 and the 2nd PNP bipolar transistors 111 of control circuit
The electrostatic capacitance of capacitor between pole switches over, so as to the power switched switching speed of semiconductor element 120.Separately
Outside, inverter input voltage is used as to the voltage of battery 300 herein, but also can be between DC-to-AC converter 100 and battery 300
DC/DC converters are set, and using the output voltage of above-mentioned DC/DC converters as inverter input voltage.
Wherein, it is however generally that, if inverter input voltage raises, apply to the voltage of power semiconductor device 120
Rise.In order to inhibit this case, it is necessary to which considering the maximum input voltage of inverter determines power semiconductor device 120
Switching speed.Therefore, in the case where inverter input voltage is relatively low, then power semiconductor device 120 can excessively be reduced
Switching speed.
Inverter input voltage is detected using such as voltage sensor (not shown).(do not schemed based on the detection signal
Show), on/off judgement is carried out to switch 118 using decision circuit 117 is turned on/off, is switched on or switched off switch 118.
In the case where switch 118 is connected, capacitor 119 becomes with capacitor 1110 to be connected in parallel, therefore, with switch
118 situations about disconnecting are compared, and synthesis electrostatic capacitance increases.Therefore, the rising of the grid current ig of gate driving circuit 110 is flowed through
Slack-off, the charging rate to charge to the grid capacitance of power semiconductor device 120 is slack-off, and switching speed reduces.
The exemplified hand-off process of the switching speed of present embodiment of Figure 10.Figure 10 a show inverter input electricity
The variation of pressure, Figure 10 b show that the variation of the ON/OFF state of switch 118, Figure 10 c show the variation of switching speed.Such as
Shown in figure, in the case where inverter input voltage is higher, switch 118 is connected to reduce switching speed, is inputted in inverter
In the case that electric current is relatively low, switch 118 is disconnected to improve switching speed.
Present embodiment 7 from the description above can reduce noise when power semiconductor device 120 turns on, and energy
The switching loss of power semiconductor device 120 when reduction inverter input voltage is relatively low.
Embodiment 8.
Fig. 6 is also represented by the gate driving circuit of embodiments of the present invention 8.That is, according to being equipped on DC-to-AC converter 100
The temperature of power semiconductor apparatus 120, to be connected to 140 and the 2nd PNP bipolar transistors 111 of control circuit base stage it
Between the electrostatic capacitance of capacitor switch over, so as to the power switched switching speed of semiconductor element 120.
Wherein, it is however generally that, if the temperature rise of power semiconductor device, surge voltage becomes higher, in addition, power is used
The pressure-resistant reduction of semiconductor element itself, therefore, it is necessary to consider the temperature of power semiconductor device to determine power with partly leading
The switching speed of volume elements part 120.Therefore, in the case where the temperature of power semiconductor device is higher, then work(can excessively be reduced
The switching speed of rate semiconductor element 120.
The temperature of power semiconductor device 120 is detected using such as temperature sensor (not shown).Based on these inspections
Signal (not shown) is surveyed, on/off judgement is carried out to switch 118 by on/off decision circuit 117, connects switch 118
Or it disconnects.
In the case where switch 118 is connected, capacitor 119 becomes with capacitor 1110 to be connected in parallel, therefore, with switch
118 situations about disconnecting are compared, and synthesis electrostatic capacitance increases.Therefore, the rising of the grid current ig of gate driving circuit 110 is flowed through
Slack-off, the charging rate to charge to the grid capacitance of power semiconductor device 120 is slack-off, and switching speed reduces.
The exemplified hand-off process of the switching speed of present embodiment of Figure 11.Figure 11 a show power semiconductor
The variation of the temperature of element, Figure 11 b show that the variation of the ON/OFF state of switch 118, Figure 11 c show switching speed
Variation.As shown in the figure, in the case where the temperature of power semiconductor device is relatively low, switch 118 is connected to reduce switch
Speed in the case where the temperature of power semiconductor device is higher, switch 118 is disconnected to improve switching speed.
Present embodiment 8 from the description above can reduce noise when power semiconductor device 120 turns on, and energy
The switching loss of power semiconductor device 120 when the temperature of reduction power semiconductor device is higher.
Embodiment 9.
Fig. 6 is also represented by the gate driving circuit of embodiments of the present invention 9.It is connected namely based on DC-to-AC converter 100
Motor 200 power operation/regenerated operating state, to being connected to 140 and the 2nd PNP bipolar transistors of control circuit
The electrostatic capacitance of capacitor between 111 base stage switches over, so as to the switch speed of power switched semiconductor element 120
Degree.
Wherein, it is however generally that, motor carries out regenerated situation compared with situation about being run into action edge, is applied to power
It is become higher with the voltage of semiconductor element, therefore, it is necessary to consider the power of motor operation/regenerated operating state to determine power
With the switching speed of semiconductor element 120.Therefore, in the case where motor is run into action edge, then power can excessively be reduced
With the switching speed of semiconductor element 120.
For power operation/regenerated operating state of motor, such as using the current sense by DC-to-AC converter
The current symbol that device (not shown) detects, to judge the power of motor operation/regeneration.(do not schemed based on the detection signal
Show), on/off judgement is carried out to switch 118 using decision circuit 117 is turned on/off, is switched on or switched off switch 118.
In the case where switch 118 is connected, capacitor 119 becomes with capacitor 1110 to be connected in parallel, therefore, with switch
118 situations about disconnecting are compared, and synthesis electrostatic capacitance increases.Therefore, the rising of the grid current ig of gate driving circuit 110 is flowed through
Slack-off, the charging rate to charge to the grid capacitance of power semiconductor device 120 is slack-off, and switching speed reduces.
The exemplified switching speed hand-off process of present embodiment 9 of Figure 12.Figure 12 a show the power fortune of motor
Row/the variation of regenerated operating state, Figure 12 b show that the variation of the ON/OFF state of switch 118, Figure 12 c are shown out
Close the variation of speed.As shown in the figure, the operating state in motor is regenerated, switch 118 is connected to reduce out
Speed is closed, in the case where the operating state of motor is power operation, switch 118 is disconnected to improve switching speed.
Present embodiment 9 from the description above can reduce noise when power semiconductor device 120 turns on, and energy
Reduce the switching loss of power semiconductor device 120 when the operating state of motor runs for power.
Embodiment 10.
The switching speed of power semiconductor device is determined by combining the parameter recorded in the above embodiment 1~9
So as to obtain better effect, it would have been obvious for a person skilled in the art for this.Thus, detailed description will be omitted.
Embodiment 11.
1~10 gate driving circuit 110 for the above embodiment, by combining variable resistance circuit shown in Fig. 2
Better effect can be obtained with the variable electrostatic capacitance circuit shown in Fig. 6, this is aobvious and easy to those skilled in the art
See.Thus, detailed description will be omitted.
Embodiment 12.
1~11 gate driving circuit 110 for the above embodiment, can be ambipolar using NPN as shown in Figure 13
Transistor replaces PNP bipolar transistors, so can also obtain identical effect.
It that is, will be double as the 2nd NPN of second switch element in the embodiment of gate driving circuit shown in Fig. 2
The emitter of bipolar transistor is connected with the grid of power semiconductor device, the second NPN bipolar transistor base stage-
Variable resistance part is connected between emitter, the emitter connection of the first NPN bipolar transistor as first switching element
To the second NPN bipolar transistor base stage and variable resistance part tie point, that its base stage is connected to the 2nd NPN is ambipolar
The collector of transistor, its collector are connected to control circuit, and decision circuit is to can described in being made of the parallel circuit of resistance
The resistance of the part become in resistance section is turned on/off, so as to change resistance value.
In addition, in the embodiment of gate driving circuit shown in Fig. 6, it will be double as the 2nd NPN of second switch element
The emitter of bipolar transistor is connected with the grid of power semiconductor device, the second NPN bipolar transistor base stage-
Resistance is connected between emitter, the emitter of the first NPN bipolar transistor as first switching element is connected to the 2nd NPN
The base stage of bipolar transistor and the tie point of resistance, its base stage are connected to the collector of the second NPN bipolar transistor, Qi Ji
Electrode is connected to control circuit, and variable condenser portion is connected between collector-emitter of the second NPN bipolar transistor,
Decision circuit to the capacitor of the part in the variable condenser portion that is made of the parallel circuit of capacitor connect/
It disconnects, so as to change capacitance.
Moreover, in the embodiment of the gate driving circuit shown in Figure 13, it will be as the 2nd NPN of second switch element
The emitter of bipolar transistor is connected with the grid of power semiconductor device, in the base of the second NPN bipolar transistor
Variable resistance part is connected between pole-emitter, the emitter of the first NPN bipolar transistor as first switching element connects
It is connected to the base stage of the second NPN bipolar transistor and the tie point of variable resistance part, its base stage is connected to the 2nd ambipolar crystalline substances of NPN
The collector of body pipe, its collector are connected to control circuit, and variable condenser portion is connected to the collection of the second NPN bipolar transistor
Between electrode-transmitter pole, decision circuit to the resistance of the part in the variable resistance part that is made of the parallel circuit of resistance into
Row on/off, the variable condenser portion so as to change resistance value and/or to being made of the parallel circuit of capacitor
The capacitor of an interior part is turned on/off, so as to change capacitance.
Embodiment 13.
It is discontinuous to change the switching speed of power semiconductor device in the above embodiment 1~12, but continuously change
Identical effect can also be obtained by becoming switching speed, and this point is unquestionable.
I.e., in the exemplary embodiment illustrated in fig. 2, the mechanicalness characteristic value of motor can not only be applied, moreover it is possible to shown in application drawing 6
The power fortune of inverter input/output current/voltage, power semiconductor device temperature or motor in embodiment
Row/reproduced state in the embodiment shown in fig. 6, can not only apply inverter, power semiconductor device temperature or electronic
Power operation/reproduced state of machine, moreover it is possible to the mechanicalness characteristic value of the motor in application embodiment shown in Fig. 2.
In addition, in the above embodiment 1~13 in the case that motor becomes high load, pay attention to low noiseization and come
It is controlled such that switching speed reduction, but can also be carried out by opposite way.In the future, in the low-loss power of application with partly
In the case of conductor element (such as SiC) etc., the optimum balance between low noise and efficiency (loss) can be obtained.
In addition, power semiconductor device can be made of the band gap non-Si semi-conducting materials wider than silicon, above-mentioned non-Si
Semi-conducting material can be any one of carborundum, gallium nitride type material or diamond.
Label declaration
100 DC-to-AC converters,
110 gate driving circuits,
111 bipolar transistors,
111n bipolar transistors,
112 bipolar transistors,
112n bipolar transistors,
113 resistance,
113n resistance,
115 resistance,
115n resistance,
116 switches,
116n switches,
117 decision circuits,
117n decision circuits,
118 switches,
118n switches,
119 capacitors,
119n capacitors,
120 power semiconductor devices,
140 power semiconductor device control circuits,
200 motor,
300 batteries,
1110 capacitors,
1110b capacitors.
Claims (17)
1. a kind of gate driving circuit,
It is to be mounted in for exchange the grid of the power semiconductor device of the voltage driven type for the inverter for carrying out drive motor
Pole driving circuit, which is characterized in that including：
Current-variable portion, the current-variable portion make to carry out the grid of power semiconductor device with fixed current by control circuit
Charging current during charging changes；And
Decision circuit, the load condition or driving condition of the motor which detects according to sensor, to institute
Current-variable portion is stated to be controlled, to reduce noise, so as to change the switching speed of the power semiconductor device,
The current-variable portion includes：It is arranged at the access of the charging current and resistance value is controlled by the decision circuit
Variable resistance part；The first switching element being connected with the variable resistance part, when the first switching element is on shape
During state, the charging current is supplied to the power semiconductor device；Second switch element, when the first switching element
When in the conduction state, due to the pressure drop of the variable resistance part, which becomes conducting so that described can power transformation
Resistance part and first switching element short circuit, so as to control the first switching element into cut-off.
2. a kind of gate driving circuit,
It is to be mounted in for exchange the grid of the power semiconductor device of the voltage driven type for the inverter for carrying out drive motor
Pole driving circuit, which is characterized in that including：
Current-variable portion, the current-variable portion make to carry out the grid of power semiconductor device with fixed current by control circuit
Charging current during charging changes；And
Decision circuit, the load condition or driving condition of the motor which detects according to sensor, to institute
Current-variable portion is stated to be controlled, to reduce noise, so as to change the switching speed of the power semiconductor device,
The current-variable portion includes：It is arranged at the resistance of the access of the charging current；Capacitance by the decision circuit into
The variable condenser portion of row control；The first switching element being connected with the resistance, when the first switching element is on
During state, the charging current is supplied to the power semiconductor device and by the resistance and the variable condenser
Portion is connected in parallel；Second switch element, when the first switching element is in the conduction state, due to the pressure drop of the resistance,
The second switch element, which becomes, to be turned on so that the resistance and the first switching element are short-circuit, so as to which the first switch is first
Part is controlled into cut-off.
3. a kind of gate driving circuit,
It is to be mounted in for exchange the grid of the power semiconductor device of the voltage driven type for the inverter for carrying out drive motor
Pole driving circuit, which is characterized in that including：
Current-variable portion, the current-variable portion make to carry out the grid of power semiconductor device with fixed current by control circuit
Charging current during charging changes；And
Decision circuit, the load condition or driving condition of the motor which detects according to sensor, to institute
Current-variable portion is stated to be controlled, to reduce noise, so as to change the switching speed of the power semiconductor device,
The current-variable portion includes：It is arranged at the variable resistance part of the access of the charging current；With the variable resistance part
The first switching element being connected when the first switching element is in the conduction state, the charging current is supplied to described
Power semiconductor device and the variable resistance part and variable condenser portion are connected in parallel；Second switch element works as institute
State first switching element it is in the conduction state when, due to the pressure drop of the variable resistance part, which becomes conducting
So that the first switching element, the variable resistance part and variable condenser portion short circuit, so as to which described first be opened
Element is closed to control into cut-off,
The variable resistance part and the variable condenser portion are controlled using the decision circuit.
4. gate driving circuit as claimed any one in claims 1 to 3, which is characterized in that
The first switching element and the second switch element are that the first PNP bipolar transistors and the 2nd PNP are bipolar respectively
Transistor npn npn or the first NPN bipolar transistor and the second NPN bipolar transistor.
5. gate driving circuit as claimed in claim 3, which is characterized in that
The decision circuit is controlled as follows：According to the mechanical property value for the load condition for representing the motor to change
The resistance value of variable resistance part is stated, cuts off the variable condenser portion at this time, according to the inversion for representing the load condition
The electrical characteristics value of device changes the capacitance in the variable condenser portion, is at this time fixed into the resistance value of the variable resistance part
Certain value.
6. gate driving circuit as described in claim 1, which is characterized in that
The control circuit is connected to using as the emitter of the 2nd PNP bipolar transistors of the second switch element,
The variable resistance part is connected between the emitter-base stage of the 2nd PNP bipolar transistors,
It is ambipolar that the emitter of the first PNP bipolar transistors as the first switching element is connected to the 2nd PNP
The base stage of transistor and the tie point of the variable resistance part, the base stage of the first PNP bipolar transistors are connected to institute
The collector of the 2nd PNP bipolar transistors is stated, the collector of the first PNP bipolar transistors is connected to the power with half
The grid of conductor element,
The decision circuit by the resistance of the part in the variable resistance part to being made of the parallel circuit of resistance into
Row ON/OFF changes resistance value.
7. gate driving circuit as claimed in claim 2, which is characterized in that
The control circuit is connected to using as the emitter of the 2nd PNP bipolar transistors of the second switch element,
The resistance is connected between the emitter-base stage of the 2nd PNP bipolar transistors,
It is ambipolar that the emitter of the first PNP bipolar transistors as the first switching element is connected to the 2nd PNP
The base stage of transistor and the tie point of the resistance, the base stage of the first PNP bipolar transistors are connected to described second
The collector of PNP bipolar transistors, the collector of the first PNP bipolar transistors are connected to the power semiconductor member
The grid of part connects the variable condenser portion between emitter-collector of the 2nd PNP bipolar transistors,
The electricity that the decision circuit passes through the part in the variable condenser portion to being made of the parallel circuit of capacitor
Container carries out ON/OFF to change capacitance.
8. gate driving circuit as claimed in claim 3, which is characterized in that
The control circuit is connected to using as the emitter of the 2nd PNP bipolar transistors of the second switch element,
The variable resistance part is connected between emitter-base stage of the 2nd PNP bipolar transistors,
It is ambipolar that the emitter of the first PNP bipolar transistors as the first switching element is connected to the 2nd PNP
The base stage of transistor and the tie point of the variable resistance part, the base stage of the first PNP bipolar transistors are connected to institute
The collector of the 2nd PNP bipolar transistors is stated, the collector of the first PNP bipolar transistors is connected to the power with half
The grid of conductor element,
The variable condenser portion is connected between emitter-collector of the 2nd PNP bipolar transistors,
The decision circuit by the resistance of the part in the variable resistance part to being made of the parallel circuit of resistance into
Row ON/OFF passes through the institute to being made of the parallel circuit of capacitor to change resistance value and/or the decision circuit
The capacitor for stating the part in variable condenser portion carries out ON/OFF to change capacitance.
9. gate driving circuit as described in claim 1, which is characterized in that
The power semiconductor is connected to using as the emitter of the second NPN bipolar transistor of the second switch element
The grid of element,
The variable resistance part is connected between the base-emitter of second NPN bipolar transistor,
It is ambipolar that the emitter of the first NPN bipolar transistor as the first switching element is connected to the 2nd NPN
The base stage of transistor and the tie point of the variable resistance part, the base stage of first NPN bipolar transistor are connected to institute
The collector of the second NPN bipolar transistor is stated, the collector of first NPN bipolar transistor is connected to the control electricity
Road,
The decision circuit by the resistance of the part in the variable resistance part to being made of the parallel circuit of resistance into
Row ON/OFF changes resistance value.
10. gate driving circuit as claimed in claim 2, which is characterized in that
The power semiconductor is connected to using as the emitter of the second NPN bipolar transistor of the second switch element
The grid of element,
The resistance is connected between the base-emitter of second NPN bipolar transistor,
It is ambipolar that the emitter of the first NPN bipolar transistor as the first switching element is connected to the 2nd NPN
The base stage of transistor and the tie point of the resistance, the base stage of first NPN bipolar transistor are connected to described second
The collector of NPN bipolar transistor, the collector of first NPN bipolar transistor are connected to the control circuit,
The variable condenser portion is connected between collector-emitter of second NPN bipolar transistor,
The electricity that the decision circuit passes through the part in the variable condenser portion to being made of the parallel circuit of capacitor
Container carries out ON/OFF to change capacitance.
11. gate driving circuit as claimed in claim 3, which is characterized in that
The power semiconductor is connected to using as the emitter of the second NPN bipolar transistor of the second switch element
The grid of element,
The variable resistance part is connected between the base-emitter of second NPN bipolar transistor,
It is ambipolar that the emitter of the first NPN bipolar transistor as the first switching element is connected to the 2nd NPN
The base stage of transistor and the tie point of the variable resistance part, the base stage of first NPN bipolar transistor are connected to institute
The collector of the second NPN bipolar transistor is stated, the collector of first NPN bipolar transistor is connected to the control electricity
Road,
The variable condenser portion is connected between collector-emitter of second NPN bipolar transistor,
The decision circuit by the resistance of the part in the variable resistance part to being made of the parallel circuit of resistance into
Row ON/OFF passes through the institute to being made of the parallel circuit of capacitor to change resistance value and/or the decision circuit
The capacitor for stating the part in variable condenser portion carries out ON/OFF to change capacitance.
12. gate driving circuit as claimed any one in claims 1 to 3, which is characterized in that
The inverter is three-phase inverter obtained from 3 half-bridge circuits are connected in parallel, the exchange of the three-phase inverter
Terminal is connected with the motor, wherein, the half-bridge circuit is by being connected in series 2 power semiconductor devices
Obtained from.
13. gate driving circuit as described in claim 1, which is characterized in that
The mechanical property value of the motor is rotating speed, torque or output,
The mechanical property value of the motor is lower, and the decision circuit makes the resistance value of the variable resistance part become lower,
So that the switching speed of the power semiconductor device becomes higher.
14. gate driving circuit as claimed in claim 2, which is characterized in that
The electrical characteristics value for representing the inverter of the load condition is output current, output voltage, input current or input
Voltage,
The electrical characteristics value of the inverter is lower or the temperature of the power semiconductor device is higher or described electronic
Machine is in power operating status, at this point, the decision circuit makes the capacitance in the variable condenser portion become lower, so that
The switching speed of the power semiconductor device becomes higher.
15. gate driving circuit as claimed in claim 3, which is characterized in that
The mechanical property value of the motor is lower, and the decision circuit makes the resistance value of the variable resistance part become lower,
So that the switching speed of the power semiconductor device becomes higher and/or represents the described of the load condition
The temperature of lower, the described power semiconductor device of electrical characteristics value of inverter is higher or the motor is in power fortune
Row state, at this point, the decision circuit makes the capacitance in the variable condenser portion become lower, so that the power is with partly
The switching speed of conductor element becomes higher.
16. gate driving circuit as claimed any one in claims 1 to 3, which is characterized in that
The power semiconductor device is made of the band gap non-Si semi-conducting materials wider than silicon.
17. gate driving circuit as claimed in claim 16, which is characterized in that
The non-Si semi-conducting materials are any one of carborundum, gallium nitride type material or diamond.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014092752A JP5931116B2 (en) | 2014-04-28 | 2014-04-28 | Gate drive circuit |
| JP2014-092752 | 2014-04-28 |
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| CN105048776A CN105048776A (en) | 2015-11-11 |
| CN105048776B true CN105048776B (en) | 2018-05-18 |
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| CN201510053458.8A Active CN105048776B (en) | 2014-04-28 | 2015-02-02 | Gate driving circuit |
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| Country | Link |
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| JP (1) | JP5931116B2 (en) |
| CN (1) | CN105048776B (en) |
| DE (1) | DE102015201227A1 (en) |
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| CN108075755B (en) * | 2016-11-11 | 2021-07-06 | 台达电子工业股份有限公司 | Power module and control method thereof |
| WO2019171509A1 (en) * | 2018-03-07 | 2019-09-12 | 日産自動車株式会社 | Switching device and method for controlling switching device |
| JP6678195B2 (en) * | 2018-03-22 | 2020-04-08 | 住友電装株式会社 | Relay drive circuit |
| CN108494234B (en) * | 2018-04-09 | 2020-05-01 | 电子科技大学 | Floating power rail suitable for GaN high-speed gate drive circuit |
| CN110798052B (en) * | 2018-08-01 | 2022-02-25 | 三垦电气株式会社 | Control device and method for power equipment |
| JP7006547B2 (en) * | 2018-09-10 | 2022-01-24 | 三菱電機株式会社 | Semiconductor device |
| CN117039796A (en) * | 2018-11-02 | 2023-11-10 | 罗姆股份有限公司 | Semiconductor unit, semiconductor device, battery unit, and vehicle |
| CN110784097A (en) * | 2019-12-03 | 2020-02-11 | 珠海格力电器股份有限公司 | Driver of power module, intelligent power module and air conditioner |
| CN111478560B (en) * | 2020-04-30 | 2022-09-06 | 陕西亚成微电子股份有限公司 | Control method and circuit for gallium nitride power tube |
| CN111478561A (en) * | 2020-04-30 | 2020-07-31 | 陕西亚成微电子股份有限公司 | Peak value eliminating method and circuit |
| CN112511074B (en) * | 2020-11-25 | 2022-07-19 | 河南嘉晨智能控制股份有限公司 | Motor controller temperature control method and system |
| KR20230103987A (en) | 2021-12-30 | 2023-07-07 | 주식회사 더파워랩스 | Current Changeable MOSFET Gate Drive Circuit |
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| US5986484A (en) * | 1996-07-05 | 1999-11-16 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device drive circuit with voltage surge suppression |
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Also Published As
| Publication number | Publication date |
|---|---|
| DE102015201227A1 (en) | 2015-10-29 |
| JP5931116B2 (en) | 2016-06-08 |
| JP2015211584A (en) | 2015-11-24 |
| CN105048776A (en) | 2015-11-11 |
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