CN105047786A - Chip scale package LED packaging method - Google Patents
Chip scale package LED packaging method Download PDFInfo
- Publication number
- CN105047786A CN105047786A CN201510286106.7A CN201510286106A CN105047786A CN 105047786 A CN105047786 A CN 105047786A CN 201510286106 A CN201510286106 A CN 201510286106A CN 105047786 A CN105047786 A CN 105047786A
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- Prior art keywords
- led chip
- glue
- wafer
- film
- packing
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
The invention relates to a chip scale package LED packaging method, which comprises the steps that (1) a fixing film used for fixing positions of LED chips is arranged on a carrier plate; (2) a plurality of LED chips are distributed at the surface of the fixing film, the LED chips are distributed in an array mode, and a gap is reserved between the adjacent LED chips; (3) the LED chips are covered with a layer of fluorescent glue, the gap between the adjacent LED chips can be filled with the fluorescent glue, and the top surface of four side surfaces of each LED chip are wrapped by the fluorescent glue; a protective film is attached to the surface of a fluorescent glue layer after the fluorescent glue is solidified; (5) cutting is carried out at the gap between the adjacent LED chips, the adjacent LED chips form a channel therebetween, and the channel can cut the fluorescent glue layer and the protective film; (6) each channel is filled with light blocking glue; (7) cutting is carried out on a light blocking glue layer after the light blocking glue is solidified, and the light blocking glue layer is cut to the fixing film; and (8) the single LED chip is separated from the fixing film and the protective film so as to form a single finished product.
Description
Technical field
The present invention relates to LED, especially the method for packing of wafer-level package white light LEDs.
Background technology
Based on the novel wafer-level package LED(CSPLED of flip chip; ChipScale
PackageLED), be provided with electrode in the die bottom surface of encapsulating structure, directly at upper surface and the side package on package colloid of chip, the electrode of bottom surface exposed, because this encapsulating structure there is no support or substrate, can packaging cost be reduced.Existing wafer-level package LED normally takes five luminescences, and namely the end face of LED and four sides all can be luminous, and the packaging technology of this kind of LED is relatively simple.Along with the raising that people require the angle, consistency etc. of product bright dipping, current wafer-level package LED structure can not meet people's needs, and people thirst for the appearance with the wafer-level package LED of one side luminescence.As Chinese patent, publication number is 104112810 encapsulating structures opening public a kind of wafer-level package LED, comprise bottom surface be provided with the LED chip of electrode and be packaged in the packing colloid of described LED chip end face and side, described packing colloid at least one position in lower portion is provided with reflecting surface: bottom and side.Described reflecting surface is the reflecting curved surface or the plane of reflection that extend to side from the bottom of packing colloid.This technology is by improving light extraction efficiency and adjust angular and form one side bright dipping spraying one deck reflector from the bottom surface of packing colloid and side.Although above-mentioned technology also can accomplish the one side bright dipping of product; but its packaging technology more complicated; reflecting surface for being in the light is formed by spraying; the technique can only implemented for single LEDs like this; during production in enormous quantities; the manpower and materials that its technique consumes are huge beyond doubt, are not suitable for large-scale production.
Summary of the invention
Technical problem to be solved by this invention is to provide the method for packing of a kind of wafer-level package LED, and technique is simple, is convenient to accomplish scale production.
For solving the problems of the technologies described above, technical scheme of the present invention is: the method for packing of a kind of wafer-level package LED, comprises the following steps:
(1) the fixing film of one deck for fixed L ED chip position is set on support plate;
(2) at the some LED chips of described fixing film surface distributed, and described LED chip is array distribution, leaves gap between adjacent LED chip; The bottom surface of LED chip is provided with electrode, and bottom surface and the fixing film of LED chip are affixed;
(3) cover one deck fluorescent glue at LED chip, fluorescent glue can fill the gap between the adjacent LED chip of full phase, and the end face of LED chip and four sides all have fluorescent glue to wrap up;
(4), after fluorescent glue solidification, layer protecting film is pasted on fluorescent adhesive layer surface;
(5) gap location between adjacent LED chip cuts, and forms groove between adjacent LED chip, and fluorescent adhesive layer and diaphragm can cut off by groove;
(6) in groove, the glue that is in the light is filled;
(7) be in the light after adhesive curing, to glue-line cutting of being in the light, depth of cut is to fixing film;
(8) single led chip is separated from fixing film and diaphragm formation single finished product.
By technique of the present invention, the LED of many one side luminescences can be produced simultaneously, bright dipping is required that higher product can use the LED of one side luminescence as light source.
As improvement, described fixing film is UV two-sided tape film or thermal separation gel band film.
As improvement, described diaphragm is UV two-sided tape film or thermal separation gel band film.
As improvement, the cross section of described groove is square, and the width of groove is 0.3 ~ 0.5mm.
As improvement, described support plate is transparent panel, and support plate is glass plate.
As improvement, described fluorescent adhesive layer passes through mould model.
As improvement, the clearance distance between adjacent LED chip is equal.
The beneficial effect that the present invention is compared with prior art brought is:
The present invention brushes fluorescent glue and then forms fluorescent adhesive layer in LED chip surrounding side and end face, cuts out groove in the gap of adjacent LED chip, fills the glue that is in the light again in groove, finally by the packaging technology that plurality of LEDs chip is separated, can produce the LED of many one side luminescences simultaneously by being fixed multiple LED chip, in adjacent LED chip gap.
Accompanying drawing explanation
Fig. 1 is present invention process flow chart.
Embodiment
Below in conjunction with Figure of description, the invention will be further described.
Embodiment 1
As shown in Figure 1, the method for packing of a kind of wafer-level package LED, comprises the following steps:
(1) the fixing film 2 of one deck for fixed L ED chip 4 position is set on support plate 1; The fixing film 2 of the present embodiment is UV two-sided tape film, and support plate 1 is glass plate; UV two-sided tape film can directly be fixed in the one side of glass plate by bonding method, then UV two-sided tape film can be separated with glass plate by the another side irradiating glass plate;
(2) at the some LED chips 4 of described fixing film 2 surface distributed, the quantity of LED chip 4 can be established according to the size of glass plate, or establish according to Production requirement, described LED chip 4 is in array distribution, the gap for cutting is left between adjacent LED chip 4, the width of every interspace is consistent, guarantees the consistency of every LEDs after cutting; LED chip 4 is flip-chip, and its bottom surface is provided with electrode 8, and the bottom surface of LED chip 4 and the another side of fixing film 2 are affixed, and are fixed by LED chip 4 by the viscosity of fixing film 2;
(3) on LED chip 4 array, pass through mould model one deck fluorescent glue, fluorescent glue can fill the gap between the adjacent LED chip 4 of full phase, and the end face of LED chip 4 and four sides all have fluorescent glue to wrap up;
(4), after fluorescent glue solidification, paste layer protecting film 5 on fluorescent adhesive layer 3 surface, this diaphragm 5 is UV two-sided tape film;
(5) gap location between adjacent LED chip 4 utilizes blade cutting, and form groove 6 between adjacent LED chip 4, the cross section of described groove 6 is square, and the width of groove 6 is 0.3 ~ 0.5mm, the degree of depth is to fixing film 2, and fluorescent adhesive layer 3 and diaphragm 5 can cut off by groove 6;
(6) fill in groove 6 and to be in the light glue, the glue that is in the light can be added by the form of brushing, and after adhesive curing of being in the light, the end face of the end face of the glue-line 7 that is in the light and the either flush of fluorescent adhesive layer 3 or the glue-line 7 that is in the light is higher than the end face of fluorescent adhesive layer 3;
(7) cut along glue-line centre position of being in the light, guarantee that the bondline thickness that is in the light of the every LEDs cut out is consistent, depth of cut, to fixing film 2, guarantees that fluorescent adhesive layer is separated completely with the glue-line that is in the light;
(8) single led chip 4 is separated from fixing film 2 and diaphragm 5 formation single finished product; side and the end face of every LEDs chip 4 are provided with fluorescent adhesive layer 3; but the fluorescent adhesive layer of side 3 is outer is also provided with the glue-line 7 that is in the light; so just only have end face can bright dipping, the fluorescent adhesive layer that LED chip 4 is arranged by end face inspires white light.
Embodiment 2
As shown in Figure 1, the method for packing of a kind of wafer-level package LED, comprises the following steps:
(1) the fixing film 2 of one deck for fixed L ED chip 4 position is set on support plate 1; The fixing film 2 of the present embodiment is thermal separation gel band film, and support plate 1 is glass plate; Thermal separation gel band film can directly be fixed in the one side of glass plate by bonding method, then can heat support plate 1 and thermal separation gel band film is separated with support plate 1;
(2) at the some LED chips 4 of described fixing film 2 surface distributed, the quantity of LED chip 4 can be established according to the size of glass plate, or establish according to Production requirement, described LED chip 4 is in array distribution, the gap for cutting is left between adjacent LED chip 4, the width of every interspace is consistent, guarantees the consistency of every LEDs after cutting; LED chip 4 is flip-chip, and its bottom surface is provided with electrode 8, and the bottom surface of LED chip 4 and the another side of fixing film 2 are affixed, and are fixed by LED chip 4 by the viscosity of fixing film 2;
(3) on LED chip 4 array, pass through mould model one deck fluorescent glue, fluorescent glue can fill the gap between the adjacent LED chip 4 of full phase, and the end face of LED chip 4 and four sides all have fluorescent glue to wrap up;
(4), after fluorescent glue solidification, paste layer protecting film 5 on fluorescent adhesive layer surface, this diaphragm 5 is thermal separation gel band film;
(5) gap location between adjacent LED chip 4 utilizes blade cutting, and form groove 6 between adjacent LED chip 4, the cross section of described groove 6 is square, and the width of groove 6 is 0.3 ~ 0.5mm, the degree of depth is to fixing film 2, and fluorescent adhesive layer and diaphragm 5 can cut off by groove 6;
(6) fill in groove 6 and to be in the light glue, the glue that is in the light can be added by the form of brushing, and after adhesive curing of being in the light, the end face of the end face of the glue-line 7 that is in the light and the either flush of fluorescent adhesive layer 3 or the glue-line 7 that is in the light is higher than the end face of fluorescent adhesive layer 3;
(7) cut along glue-line centre position of being in the light, guarantee that glue-line 7 thickness that is in the light of the every LEDs cut out is consistent, depth of cut, to fixing film 2, guarantees that fluorescent adhesive layer 3 is separated completely with the glue-line 7 that is in the light;
(8) single led chip 4 is separated from fixing film 2 and diaphragm 5 formation single finished product; side and the end face of every LEDs chip 4 are provided with fluorescent adhesive layer 3; but the fluorescent adhesive layer of side 3 is outer is also provided with the glue-line 7 that is in the light; so just only have end face can bright dipping, the fluorescent adhesive layer that LED chip 4 is arranged by end face inspires white light.
Claims (8)
1. a method for packing of wafer-level package LED, is characterized in that, comprises the following steps:
(1) the fixing film of one deck for fixed L ED chip position is set on support plate;
(2) at the some LED chips of described fixing film surface distributed, and described LED chip is array distribution, leaves gap between adjacent LED chip; The bottom surface of LED chip is provided with electrode, and bottom surface and the fixing film of LED chip are affixed;
(3) cover one deck fluorescent glue at LED chip, fluorescent glue can fill the gap between the adjacent LED chip of full phase, and the end face of LED chip and four sides all have fluorescent glue to wrap up;
(4), after fluorescent glue solidification, layer protecting film is pasted on fluorescent adhesive layer surface;
(5) gap location between adjacent LED chip cuts, and forms groove between adjacent LED chip, and fluorescent adhesive layer and diaphragm can cut off by groove;
(6) in groove, the glue that is in the light is filled;
(7) be in the light after adhesive curing, to glue-line cutting of being in the light, depth of cut is to fixing film;
(8) single led chip is separated from fixing film and diaphragm formation single finished product.
2. the method for packing of a kind of wafer-level package LED according to claim 1, is characterized in that: described fixing film is UV two-sided tape film or thermal separation gel band film.
3. the method for packing of a kind of wafer-level package LED according to claim 1, is characterized in that: described diaphragm is UV two-sided tape film or thermal separation gel band film.
4. the method for packing of a kind of wafer-level package LED according to claim 1, is characterized in that: the cross section of described groove is square, and the width of groove is 0.3 ~ 0.5mm.
5. the method for packing of a kind of wafer-level package LED according to claim 1, is characterized in that: described support plate is transparent panel.
6. the method for packing of a kind of wafer-level package LED according to claim 5, is characterized in that: described support plate is glass plate.
7. the method for packing of a kind of wafer-level package LED according to claim 1, is characterized in that: described fluorescent adhesive layer passes through mould model.
8. the method for packing of a kind of wafer-level package LED according to claim 1, is characterized in that: the clearance distance between adjacent LED chip is equal.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510286106.7A CN105047786A (en) | 2015-05-29 | 2015-05-29 | Chip scale package LED packaging method |
| EP16802375.2A EP3217442B1 (en) | 2015-05-29 | 2016-03-31 | Encapsulation method of csp led and csp led |
| PCT/CN2016/077939 WO2016192452A1 (en) | 2015-05-29 | 2016-03-31 | Encapsulation method of csp led and csp led |
| US15/535,709 US10573794B2 (en) | 2015-05-29 | 2016-03-31 | Method of packaging CSP LED and CSP LED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510286106.7A CN105047786A (en) | 2015-05-29 | 2015-05-29 | Chip scale package LED packaging method |
Publications (1)
| Publication Number | Publication Date |
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| CN105047786A true CN105047786A (en) | 2015-11-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510286106.7A Pending CN105047786A (en) | 2015-05-29 | 2015-05-29 | Chip scale package LED packaging method |
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Cited By (27)
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|---|---|---|---|---|
| CN106159061A (en) * | 2016-08-03 | 2016-11-23 | 常州市武进区半导体照明应用技术研究院 | A kind of flip chip integration packaging device and technique |
| WO2016192452A1 (en) * | 2015-05-29 | 2016-12-08 | 广州市鸿利光电股份有限公司 | Encapsulation method of csp led and csp led |
| CN106298754A (en) * | 2016-09-30 | 2017-01-04 | 鸿利智汇集团股份有限公司 | The manufacture method of a kind of CSP lamp bead and CSP lamp bead |
| CN106328639A (en) * | 2016-10-24 | 2017-01-11 | 厦门煜明光电有限公司 | LED encapsulating structure and preparing method thereof |
| WO2017107335A1 (en) * | 2015-12-24 | 2017-06-29 | 鸿利智汇集团股份有限公司 | Led vehicle light source, headlight source, and method for manufacturing the vehicle light source |
| CN107039573A (en) * | 2016-02-04 | 2017-08-11 | 晶元光电股份有限公司 | Light emitting element and method for manufacturing the same |
| CN107275457A (en) * | 2016-04-06 | 2017-10-20 | 日亚化学工业株式会社 | The manufacture method of light-emitting device |
| CN108075026A (en) * | 2017-12-08 | 2018-05-25 | 蔡志嘉 | Three defending type LED component and preparation method thereof |
| CN108198927A (en) * | 2016-12-08 | 2018-06-22 | 佛山市国星光电股份有限公司 | The packaging method and LED component of a kind of LED component |
| CN108807637A (en) * | 2017-05-03 | 2018-11-13 | 深圳市斯迈得半导体有限公司 | A kind of chip-scale LED package device and method |
| CN109713110A (en) * | 2017-10-26 | 2019-05-03 | 深圳市聚飞光电股份有限公司 | Wafer-level package LED and preparation method thereof |
| WO2019104630A1 (en) * | 2017-11-30 | 2019-06-06 | 深圳市柔宇科技有限公司 | Display screen protection structure, display assembly, cutting method and film affixing method |
| CN109904301A (en) * | 2017-12-11 | 2019-06-18 | 深圳市聚飞光电股份有限公司 | Wafer-level package multifaceted light-emitting LED and its packaging method, backlight module |
| CN109950379A (en) * | 2017-12-20 | 2019-06-28 | 深圳市聚飞光电股份有限公司 | Wafer-level package LED of multifaceted light-emitting and preparation method thereof, backlight module |
| CN109950383A (en) * | 2018-05-25 | 2019-06-28 | 海迪科（南通）光电科技有限公司 | A kind of CSP encapsulating structure and preparation method thereof of compact fitting chip |
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